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WO2018018848A1 - Module de puissance intelligent et son procédé de fabrication - Google Patents

Module de puissance intelligent et son procédé de fabrication Download PDF

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Publication number
WO2018018848A1
WO2018018848A1 PCT/CN2016/113978 CN2016113978W WO2018018848A1 WO 2018018848 A1 WO2018018848 A1 WO 2018018848A1 CN 2016113978 W CN2016113978 W CN 2016113978W WO 2018018848 A1 WO2018018848 A1 WO 2018018848A1
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WO
WIPO (PCT)
Prior art keywords
layer
power module
circuit
substrate
circuit wiring
Prior art date
Application number
PCT/CN2016/113978
Other languages
English (en)
Chinese (zh)
Inventor
冯宇翔
Original Assignee
广东美的制冷设备有限公司
美的集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201610616070.9A external-priority patent/CN106024652A/zh
Priority claimed from CN201610624916.3A external-priority patent/CN106098650A/zh
Application filed by 广东美的制冷设备有限公司, 美的集团股份有限公司 filed Critical 广东美的制冷设备有限公司
Publication of WO2018018848A1 publication Critical patent/WO2018018848A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Definitions

  • the invention belongs to the field of electronic device manufacturing processes, and in particular relates to an intelligent power module and a manufacturing method thereof.
  • the Intelligent Power Module is a power-driven product that combines power electronics and integrated circuit technology.
  • the IPM integrates a power switching device and a high voltage driving circuit, and has built-in fault detection circuits such as overvoltage, overcurrent, and overheating.
  • the IPM receives the control signal of the MCU, drives the subsequent circuit to work, and on the other hand sends the status detection signal of the system back to the MCU.
  • IPM has won more and more large markets with its high integration and high reliability. It is especially suitable for inverters and various inverter power supplies for driving motors. It is frequency control and metallurgical machinery. An ideal power electronic device for electric traction, servo drive, and frequency conversion appliances.
  • the intelligent power module generally works in harsh working conditions, such as the outdoor unit of the inverter air conditioner. Under high temperature and high humidity, the high temperature will increase the internal temperature of the intelligent power module, and the current intelligent power module is completely sealed by the sealing resin.
  • the structure of the smart power module is very easy to generate heat accumulation, and high humidity causes water vapor to enter the internal circuit of the intelligent power module through the gap between the sealing resin and the lead, and the high temperature inside the smart power module makes Ions, especially chloride and bromide in water and gas
  • the migration occurs under the metal, causing corrosion to the metal wire. This corrosion often occurs at the junction of the metal wire and the circuit component or the metal wire and the circuit wiring, resulting in an open circuit, causing fatal damage to the intelligent power module, and seriously causing intelligence.
  • the power module has an uncontrolled explosion accident, which causes damage to its application environment and causes major economic losses.
  • the intelligent power module has different power devices.
  • the material and thickness of the metal wires are different, which increases the processing difficulty of the intelligent power module.
  • the purchase of different state-of-the-line devices also increases the processing cost, and
  • the combination of various bonding processes makes the manufacturing pass-through rate of the intelligent power module low, and the production yield is difficult to increase. As a result, the cost of the intelligent power module is high, which affects the popular application of the intelligent power module.
  • the invention aims to solve the deficiencies of the prior art, and provides a high-reliability intelligent power module and a process flow adapted to the structure as a manufacturing method, which can reduce the intelligence while ensuring better contact reliability of the intelligent power module.
  • the cost of the power module is not limited to a high-reliability intelligent power module and a process flow adapted to the structure as a manufacturing method, which can reduce the intelligence while ensuring better contact reliability of the intelligent power module.
  • An embodiment of the first aspect of the present invention provides an intelligent power module comprising: a substrate having a first surface and a second surface opposite to the first surface as a carrier; and a first surface disposed on the substrate An insulating layer; a circuit wiring layer formed on a surface of the insulating layer; a circuit component that is reversed and soldered to a predetermined position on an upper surface of the circuit wiring layer; and a surface coated on the surface of the insulating layer, the circuit A sealing layer covered by a wiring layer and circuit components.
  • a pin is further included, the circuit wiring layer including a pin pad adjacent to the edge, the pin being connected to the pin pad and extending outside the circuit wiring.
  • the surface of the lead is covered with a plating layer.
  • the pin is disposed at least one edge of the smart power module.
  • sealing layer also covers the substrate.
  • the sealing layer is a resin layer.
  • the beneficial effect of the above intelligent power module is that the circuit components are electrically connected by flip-chip method.
  • the metal bonding line is no longer needed, which saves the cost; the heat sink and the aluminum substrate are completely exposed outside the resin to maximize the heat dissipation effect; even if the external moisture is invaded, it is difficult to form corrosion because there is no metal wire.
  • Another object of the present invention is to provide a method for manufacturing an intelligent power module, comprising the following steps:
  • a substrate as a carrier, covering the first surface of the substrate with an insulating layer; wherein the substrate further has a second surface opposite to the first surface;
  • a sealing layer is coated on the surface of the insulating layer to cover the circuit wiring layer and the circuit component.
  • the manufacturing method of the above intelligent power module has the beneficial effects that the full-encapsulation technology can ensure the compactness of the intelligent power module to the greatest extent, thereby improving the reliability of the intelligent power module; eliminating the metal wire bonding and cleaning process. Further reliability of the intelligent power module, but also saves equipment investment, improves production efficiency, reduces process control requirements, greatly reduces the manufacturing difficulty of the intelligent power module, improves the manufacturing yield, and further reduces the cost of the intelligent power module. .
  • An embodiment of the second aspect of the present invention provides an intelligent power module including: a substrate having a first surface and a second surface opposite to the first surface as a carrier; and a first surface disposed on the substrate The insulating layer, wherein the insulating layer is pre-positioned with a through hole penetrating the substrate; a circuit wiring layer formed on a surface of the insulating layer, wherein a potential pad is preset on the circuit wiring layer Electrically connecting to the substrate through the through hole; a circuit component that is reversed and soldered to a predetermined position on an upper surface of the circuit wiring layer; and a surface coated on the surface of the insulating layer, the circuit wiring layer and the circuit The sealing layer covered by the component.
  • a pin is further included, the circuit wiring layer including a pin pad adjacent to the edge, the pin being connected to the pin pad and extending outside the circuit wiring.
  • the surface of the lead is covered with a plating layer.
  • the pin is disposed at least one edge of the smart power module.
  • sealing layer also covers the substrate.
  • the sealing layer is a resin layer.
  • the beneficial effects of the above intelligent power module are: the electrical connection of the circuit components by the flip-chip method, the metal bonding wire is no longer needed, and the cost is saved; the heat sink and the aluminum substrate are completely exposed outside the resin to maximize the heat dissipation effect; Even if external moisture is invaded, it is difficult to form corrosion because there is no metal wire; the substrate is connected to a certain potential of the circuit wiring to obtain the specific potential of the substrate, shielding the electromagnetic interference and avoiding the occurrence of false triggering.
  • Another object of the present invention is to provide a method for manufacturing an intelligent power module, comprising the following steps:
  • a substrate as a carrier, the first surface of the substrate is covered with an insulating layer; wherein the substrate further has a second surface opposite to the first surface; and the insulating layer is provided at a predetermined position a through hole of the substrate; a circuit wiring layer is disposed on the surface of the insulating layer, and a potential pad electrically connected to the substrate through the through hole is preset in the circuit wiring layer; and the circuit wiring layer is The surface mount circuit component, wherein the circuit component is assembled in an inverted manner; a surface of the insulating layer is coated with a sealing layer to cover the circuit wiring layer and the circuit component.
  • the manufacturing method of the above intelligent power module has the beneficial effects that the full-encapsulation technology can ensure the compactness of the intelligent power module to the greatest extent, thereby improving the reliability of the intelligent power module; eliminating the metal wire bonding and cleaning process. Further reliability of the intelligent power module, but also saves equipment investment, improves production efficiency, reduces process control requirements, greatly reduces the manufacturing difficulty of the intelligent power module, improves the manufacturing yield, and further reduces the cost of the intelligent power module. Further, the step of forming the aluminum substrate to form a specific potential and the step of electrically connecting the component and the circuit wiring are unified, and the manufacturing method is not increased.
  • FIG. 1(A) is a top plan view of an intelligent power module according to an embodiment of the present invention.
  • Figure 1 (B) is a cross-sectional view taken along line X-X' in Figure 1 (A);
  • 1(C) is a plan view of the smart power module of the present invention with the sealing layer removed;
  • 1(D) is a top plan view of the lower surface of the smart power module of the present invention.
  • FIG. 2 is a flowchart of a manufacturing process of an intelligent power module according to an embodiment of the present invention
  • 3(A) and 3(B) are respectively a plan view and a side view process for fabricating a circuit wiring in the manufacturing method of the smart power module of the present invention
  • Figure 4 (A) is a dimension drawing of the pin
  • Figure 4 (B) is a schematic view of the process of making a lead
  • 5(A) and 5(B) are schematic views showing side view and top view of assembled circuit components and leads, respectively;
  • FIG. 6 is a schematic view showing a sealing process of a method for manufacturing an intelligent power module
  • FIG. 7 is a schematic diagram of a detecting process of a method for manufacturing an intelligent power module
  • FIG. 8 is a process flow diagram of a method of manufacturing an intelligent power module.
  • FIG. 9(A) is a top view of an intelligent power module according to an embodiment of the present invention.
  • Figure 9 (B) is a cross-sectional view taken along line X-X' in Figure 1 (A);
  • Figure 9 (C) is a plan view of the smart power module of the present invention with the sealing layer removed;
  • Figure 9 (D) is a top plan view of the lower surface of the smart power module of the present invention.
  • FIG. 10 is a flowchart of a manufacturing process of an intelligent power module according to an embodiment of the present invention.
  • 11(A) and 11(B) are respectively a plan view and a side view process for fabricating a circuit wiring in the method of manufacturing the smart power module of the present invention
  • Figure 12 (A) is a dimension drawing of the pin
  • Figure 12 (B) is a schematic view showing the process of making a lead
  • 13(A), 13(B) and 13(C) are schematic views showing side view and top view of assembled circuit components and leads, respectively;
  • FIG. 14 is a schematic view showing a sealing process of a method of manufacturing an intelligent power module
  • 15 is a schematic diagram of a detecting process of a method of manufacturing an intelligent power module
  • 16 is a process flow diagram of a method of manufacturing an intelligent power module.
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • the smart power module includes a substrate 16, an insulating layer 17, a circuit wiring (circuit wiring) 18, and a circuit component 14. a circuit, and a pin 11 disposed at an edge of the circuit wiring 18, and a sealing layer 12 that seals the circuit and completely covers the circuit element 14 and the upper surface of the insulating layer 17.
  • 1(A) is a top plan view of the upper surface of the smart power module 10 of the present invention, the heat sink 15 is exposed from the upper surface
  • FIG. 1(B) is a cross section taken along line XX' of FIG. 1(A).
  • 1(C) is a plan view showing the sealing layer 12 covering the circuit component 14 removed
  • FIG. 1(D) is a top plan view of the smart power module 10 of the present invention.
  • the substrate 16 acts as a carrier for the smart power module 10 and has a first surface and a second surface opposite the first surface.
  • the insulating layer 17 is disposed on the first surface of the substrate.
  • a circuit wiring layer 18 is formed on the surface of the insulating layer; the circuit component 14 is inverted and soldered to a predetermined position on the upper surface of the circuit wiring layer 18; a power component mounted on the circuit component 14 by the heat sink 15; a sealing layer 12 is coated on the surface of the insulating layer 17, covering the circuit wiring layer 18 and the circuit component 14, and the surface of the heat sink 15 is exposed.
  • the power component is a planar power device, such as an IGBT transistor, and an LIGBT must be used.
  • the power component included in circuit component 14 is a low power component that can be dissipated without the use of a heat sink. Even if a heat sink is required, the heat sink is mounted on the power component in the circuit component.
  • the sealing layer 12 is coated on the surface of the insulating layer 17, the surface of the heat sink is exposed; the heat sink is a heat sink, and the surface of the heat sink can be considered. Electroplating silver treatment is carried out to increase the wettability.
  • the sealing layer is a sealing resin layer.
  • a pin pad 18A there is a special circuit wiring for configuring the pin 11, which is referred to as a pin pad 18A.
  • the pin 11 pin pad 18A is connected and extends from the outside of the circuit wiring 18.
  • the surface of the lead is covered with a plating layer.
  • the circuit board 16 is a rectangular plate material made of aluminum such as 1050 or 5052.
  • an aluminum material of 1050 may be used, and in order to increase the hardness, an aluminum material of 5052 may be selected; in order to increase the withstand voltage, the aluminum material may be anodized, and in order to improve heat dissipation, anodization may not be performed.
  • the thickness of the circuit substrate 16 can be designed to be 1.5 mm to 2.0 mm.
  • the insulating layer 17 located on one surface of the substrate 16 can be designed to have a thickness of 100 ⁇ m to 200 ⁇ m and a thermal conductivity of 2 W/(m*K) to 3 W/(m*K).
  • the thickness is selected to be 100 ⁇ m.
  • the thickness may be selected to be 200 ⁇ m, and the thickness should generally not exceed 200 ⁇ m.
  • the thicker the thickness of the insulating layer is selected the higher the thermal conductivity should be selected accordingly.
  • the circuit wiring 18 is formed by stamping or etching a copper material having a thickness of 2 ounces or more. To prevent oxidation, the upper surface of the circuit wiring 18 may be subjected to gold plating treatment, and the circuit wiring 18 is provided for cost. The surface can also be silver plated or shipped in a vacuum or nitrogen-filled package with no treatment on the upper surface.
  • the circuit component 14 is flip-chip mounted on the circuit wiring 18.
  • the circuit element 14 uses an active element such as a transistor or a diode, or a passive element such as a capacitor or a resistor. Further, the heat sink 15 made of copper or the like is attached to the back surface of the element having a large amount of heat such as a power element.
  • solder solder
  • the lead 11 is generally made of a metal such as copper.
  • the surface of the copper is formed by electroless plating and electroplating to form a layer of nickel-tin alloy.
  • the thickness of the alloy layer is generally 5 ⁇ m.
  • the plating layer protects the copper from corrosion and oxidation and improves solderability.
  • the pin 11 may be disposed at one of the edges of the smart power module 10, or may be disposed at two opposite edges of the smart power module 10, or may be disposed at three edges of the smart power module 10, or Located at four edges of the smart power module 10;
  • the sealing layer 12 may be molded by a transfer molding using a thermosetting resin or an injection molding using a thermoplastic resin.
  • the sealing layer 12 completely seals all the elements on one side of the circuit wiring 18.
  • the lower surface of the circuit substrate 16 is also covered by the sealing layer 12, so that the moisture resistance of the smart power module 10 is improved; here, because the power component is also densely
  • the sealing layer 12 is completely sealed. Therefore, the sealing layer 12 should generally select a material with more angular crystals to improve its thermal conductivity. Considering the Panasonic 3300 series or the Hitachi 3600 series; in addition, in order to ensure the For the reliability of the smart power module 10, the leakage tracking capability of the sealing layer 12 should not be lower than 500V.
  • the beneficial effect of the intelligent power module is that the circuit components, including the small and medium power circuit components, are electrically connected by flip-chip method, eliminating the need for metal bonding wires, saving cost; sealing all the elements of the module with resin to maximize water resistance Gas entry effect; even if external moisture is invaded, it is difficult to form corrosion because there is no metal wire.
  • a method for manufacturing the smart power module including the following steps:
  • Step S110 manufacturing a substrate as a carrier, covering the first surface of the substrate with an insulating layer; wherein the substrate further has a second surface opposite to the first surface;
  • Step S120 laying a circuit wiring layer on the surface of the insulating layer
  • Step S130 assembling a circuit component on a surface of the circuit wiring layer, wherein the circuit component is assembled in an inverted manner;
  • Step S140 covering a surface of the insulating layer with a sealing layer to cover the circuit wiring layer and the circuit component.
  • Step S140 specifically includes: providing a thermosetting resin frame around the surface of the insulating layer; and injecting a thermoplastic resin into the range of the thermosetting resin frame to seal the circuit wiring layer, the circuit component, and the substrate.
  • step S130 is the step of making a separate coated pin.
  • the step specifically includes: selecting a copper substrate, forming a row of pins by punching or etching the copper substrate, connecting the pins through the ribs; forming a nickel layer and a nickel tin on the surface of the lead The alloy layer gives a plated lead.
  • the method further comprises the steps of: soldering the circuit component to the circuit wiring layer by reflow soldering; and removing the flux remaining in the insulating layer.
  • Fully encapsulated technology injection ensures maximum compactness of the intelligent power module, thus enabling intelligent power
  • the reliability of the module is improved; the metal wire bonding and cleaning process are eliminated, the reliability of the intelligent power module is further improved, the equipment investment is saved, the production efficiency is improved, the process control requirements are reduced, and the intelligent power module is manufactured.
  • the difficulty is greatly reduced, the manufacturing yield is improved, and the cost of the intelligent power module is further reduced.
  • the method of manufacturing the smart power module includes the following steps.
  • the first process 802 referring to FIGS. 3(A) and 3(B):
  • the first step 802 of the present invention is a step of the present invention, and the step is a step of forming a circuit wiring on an aluminum plate of an appropriate size.
  • a circuit board 16 of a suitable size is designed according to the required circuit layout.
  • one size can be selected as 64 mm ⁇ 30 mm, and the short sides of three pieces are connected to each other with a size of 50 mm ⁇ 75mm, forming a triple-plate unit composed of three smart power modules 10 metal circuit substrates 16.
  • An insulating layer 17 is provided on the surface of the aluminum substrate 16. Further, a copper foil as the circuit wiring 18 is bonded to the surface of the insulating layer 17. Then, the copper foil produced in this step is etched to partially remove the copper foil to form the circuit wiring 18 and the lead pad 18A.
  • the aluminum substrate of a suitable size is formed by directly processing a 1 m ⁇ 1 m aluminum material, and the file is made of high-speed steel, and the motor is rotated at 5000 rpm, and the boring tool and the aluminum material are used.
  • the plane is cut at a right angle to make the edge of the 1100 aluminum material at right angles, and the burr is less than 10 ⁇ m. It can also be etched into a specific shape by chemical reaction through an etching tool. Referring to the X-X' line of FIG. 3(A), FIG. 3(B) is a cross-sectional view.
  • a gold layer may be formed on the surface of the circuit wiring 18 by means of electroplating gold or chemical immersion gold.
  • the thickness of the copper plate used to manufacture the circuit wiring 18 should be not less than 2 ounces, ensuring sufficient flow capacity.
  • the triple plate unit is sometimes separated by a V-CUT method, and the V-CUT can prevent the insulating layer 17 from being cracked during punching, thereby improving the long-term reliability of the smart power module 10.
  • the circuit wiring 18 no longer has a bonding point. Therefore, the area of the circuit substrate 16 can be reduced for the same circuit function, and the circuit board size of the prior art is generally small.
  • the design is 64 mm ⁇ 30 mm, and the circuit board of the present embodiment is designed to be 50 mm ⁇ 25 mm, which embodies the miniaturization effect after the bonding wire is not required.
  • the second process 804 refers to FIG. 4(A) and FIG. 4(B):
  • the second step 804 of the present invention is a step of the present invention, and this step is a step of forming an independent lead 11 with a plating layer.
  • Each of the leads 11 is made of a copper substrate, and is formed into a strip shape having a length C of 25 mm, a width K of 1.5 mm, and a thickness H of 1 mm, as shown in Fig. 4(A); here, for ease of assembly, Pressing a certain arc at one end, as shown in Figure 4 (B);
  • a nickel layer is formed by electroless plating: a nickel layer is formed on the surface of the copper material having a specific shape by a mixed solution of a nickel salt and a sodium hypophosphite, and a suitable complexing agent is added, and the nickel metal is strong in the metal nickel. Passivation ability, can quickly form a very thin passivation film, resistant to atmospheric, alkali and some acid corrosion.
  • the nickel-plated crystal is extremely fine, and the thickness of the nickel layer is generally 0.1 ⁇ m;
  • the copper material having the formed shape and the nickel layer is immersed in the plating solution with the positive tin ions at room temperature to form a nickel-tin alloy layer on the surface of the nickel layer, and the thickness of the nickel layer is generally controlled at 5 ⁇ m.
  • the formation of the nickel layer greatly improves the protection and solderability;
  • the pin 11 of the present invention is a single pin, which is different from the entire row of pins of the prior art, because the circuit wiring 18 to which the pin 11 is fixed is only wrapped by a resin portion.
  • the impact strength is limited, and the separate pins avoid the process of cutting the ribs, and the systemic impact on the smart power module 10 of the present invention can be reduced.
  • the third step 806 of the present invention is a step of the present invention. This step is a step of flip-chip bonding the circuit element 14 on the surface of the circuit wiring 18 and arranging the lead pins 11.
  • the fabricated circuit wiring 18 is connected to the side view of FIG. 5 (A) and the top view of FIG. 5 (B).
  • a solder paste printing machine a solder paste is used to apply a solder paste to a specific position of the circuit wiring 18, and the steel mesh can be used with a thickness of 0.13 mm.
  • the circuit component 14 is formed by an apparatus such as an SMT machine or a DA machine, including the circuit component 14 on which the heat sink 15 has been disposed, and the mounting of the pin 11, which can be directly flipped over the circuit wiring 18.
  • the specific position, and the pin 11 is placed on the pad 18A at one end, and the carrier 20 is required to be fixed at the other end, and the carrier 20 is made of a material such as synthetic stone.
  • the circuit substrate 16 placed on the carrier 20 is reflowed, the solder paste is cured, and the circuit component 14 and the lead 11 are fixed.
  • the reflow temperature generally does not exceed 300 ° C, and therefore, the power element 14 and the heat sink 15 are not separated at the time of reflow.
  • the fourth step 908 of the present invention is a step of the present invention, and this step is a step of sealing the circuit wiring 18 with the sealing resin 12.
  • FIG. 6 is a cross-sectional view showing a step of sealing the circuit wiring 18 carried by the base 16 with a sealing resin using a mold 50.
  • the circuit wiring 18 is baked in an oxygen-free environment, the baking time should not be less than 2 hours, the baking temperature and the selection of 125 °C.
  • the base 16 on which the circuit board 18 is placed is transported to the models 44 and 45.
  • the positioning of the circuit substrate 16 is performed by bringing a specific portion of the pin 11 into contact with the fixture 46.
  • the circuit substrate 16 is placed in a cavity formed inside the mold 50, and then the sealing resin is injected from the gate 53 to form the sealing layer 12.
  • the method of performing the sealing can be carried out by transfer molding using a thermosetting resin or injection molding using a thermosetting resin. Further, the gas inside the cavity of the sealing resin 12 injected corresponding to the gate 103 is discharged to the outside through the exhaust port 54.
  • the upper mold 44 and the lower mold 45 are not in contact with the module 10.
  • the position of the module 10 in the cavity is sometimes also used in the manner in which the upper mold 44 is disposed with the ejector pin.
  • Positioning the disadvantage is that it will leave air holes for the module 10, which affects the compactness of the module.
  • This embodiment is shown to maximize the compactness of the module 10, and the thimble is not configured for the upper mold; because the solution mainly applies the field of small and medium power modules. Thickness requirements for the sealing layer 12 on the bottom surface of the circuit substrate 16 Not strict, at ⁇ 0.5mm, so no thimble positioning is required.
  • the surface of the heat sink and the bottom surface of the circuit substrate 16 are exposed from the sealing layer 12. If the sealing layer 12 overflows heavily, a laser can be added to remove the glue or grind. The process of the glue.
  • the fifth step 810 of the present invention is a process of performing the pin 11 molding and the module function test, and the smart power module is completed as a product through this process.
  • the portion other than the lead 11 is sealed by the resin 12. This step is required according to the length and shape used, for example, the outer lead 11 is bent into a shape at the position of the broken line 51 to facilitate subsequent assembly.
  • the pins 11 are independent of each other, some pins may not be on the same level after molding, which affects the contact, so it is generally necessary to first test the machine gold finger. Contact test with the pin. If the contact test does not pass, the pin 11 needs to be trimmed until the contact test passes, and then the electrical characteristic test is performed, including insulation withstand voltage, static power consumption, delay time, etc. For the project, the qualified person is the finished product.
  • the smart power module 10 shown in Fig. 2 is completed by the above steps.
  • Embodiment 2 is a diagrammatic representation of Embodiment 1:
  • the smart power module includes a substrate 16, an insulating layer 17, a circuit wiring (circuit wiring) 18, and a circuit component 14. a circuit, and a pin 11 disposed at an edge of the circuit wiring 18, and a sealing layer 12 that seals the circuit and completely covers the circuit element 14 and the upper surface of the insulating layer 17.
  • 9(A) is a top plan view of the upper surface of the smart power module 10 of the present invention, the heat sink 15 is exposed from the upper surface
  • FIG. 9(B) is a cross section taken along line XX' of FIG. 9(A).
  • 9(C) is a plan view showing the sealing layer 12 covering the circuit component 14 removed
  • FIG. 9(D) is a plan view showing the lower surface of the smart power module 10 of the present invention.
  • the substrate 16 acts as a carrier for the smart power module 10 and has a first surface and a second surface opposite the first surface.
  • An insulating layer 17 is disposed on the first surface of the substrate 16, wherein the insulating layer 17 A through hole 70 penetrating the substrate 16 is opened at a predetermined position.
  • the circuit wiring layer 18 is formed on the surface of the insulating layer 17, wherein a predetermined potential pad 18B is electrically connected to the substrate 16 through the through hole 70; the circuit component 14 is reversed and soldered a predetermined position on the upper surface of the circuit wiring layer 18; a heat sink 15 mounted on the power element in the circuit component 14; a sealing layer 12 covering the surface of the insulating layer 17, the circuit wiring layer 18 and the circuit component 14 Covering and exposing a portion of the surface of the heat sink 15 to the surface.
  • the power component is a planar power device, such as an IGBT transistor, and an LIGBT must be used.
  • the power component included in circuit component 14 is a low power component that can be dissipated without the use of a heat sink. Even if a heat sink is required, the heat sink is mounted on the power component in the circuit component.
  • the sealing layer 12 is coated on the surface of the insulating layer 17, the surface of the heat sink is exposed; the heat sink is a heat sink, and the surface of the heat sink can be considered. Electroplating silver treatment is carried out to increase the wettability.
  • the sealing layer is a sealing resin layer.
  • a pin pad 18A there is a special circuit wiring for configuring the pin 11, which is referred to as a pin pad 18A.
  • the pin 11 pin pad 18A is connected and extends from the outside of the circuit wiring 18.
  • the surface of the lead is covered with a plating layer.
  • a certain potential of the circuit wiring 18, such as the GND potential, is set to a wider potential pad 18B.
  • the diameter of the potential pad 18B should not be less than 5 mm, and the potential pad 18B is opened through.
  • the circuit wiring 18 and the insulating layer 17 expose the through hole 70 of the aluminum substrate 16.
  • the diameter of the through hole 70 should not be less than 3 mm and cannot be larger than the potential pad 18B, and the depth of the through hole 70 is just exposed.
  • the substrate 16 is preferably not more than 1.5 mm.
  • the circuit board 16 is a rectangular plate material made of aluminum such as 1050 or 5052.
  • an aluminum material of 1050 may be used, and in order to increase the hardness, an aluminum material of 5052 may be selected; in order to increase the withstand voltage, the aluminum material may be anodized, and in order to improve heat dissipation, anodization may not be performed.
  • the thickness of the circuit substrate 16 can be designed to be 1.5 mm to 2.0 mm.
  • the insulating layer 17 located on one surface of the substrate 16 can be designed to have a thickness of 100 ⁇ m to 200 ⁇ m and a thermal conductivity of 2 W/(m*K) to 3 W/(m*K).
  • the thickness is selected to be 100 ⁇ m.
  • the thickness may be selected to be 200 ⁇ m, and the thickness should generally not exceed 200 ⁇ m.
  • the thicker the thickness of the insulating layer is selected the higher the thermal conductivity should be selected accordingly.
  • the circuit wiring 18 is formed by stamping or etching a copper material having a thickness of 2 ounces or more. To prevent oxidation, the upper surface of the circuit wiring 18 may be subjected to gold plating treatment, and the circuit wiring 18 is provided for cost. The surface can also be silver plated or shipped in a vacuum or nitrogen-filled package with no treatment on the upper surface.
  • the circuit component 14 is flip-chip mounted on the circuit wiring 18.
  • the circuit element 14 uses an active element such as a transistor or a diode, or a passive element such as a capacitor or a resistor. Further, the heat sink 15 made of copper or the like is attached to the back surface of the element having a large amount of heat such as a power element.
  • solder solder
  • the lead 11 is generally made of a metal such as copper.
  • the surface of the copper is formed by electroless plating and electroplating to form a layer of nickel-tin alloy.
  • the thickness of the alloy layer is generally 5 ⁇ m.
  • the plating layer protects the copper from corrosion and oxidation and improves solderability.
  • the pin 11 may be disposed at one of the edges of the smart power module 10, or may be disposed at two opposite edges of the smart power module 10, or may be disposed at three edges of the smart power module 10, or Located at four edges of the smart power module 10;
  • the sealing layer 12 may be molded by a transfer molding using a thermosetting resin or an injection molding using a thermoplastic resin.
  • the sealing layer 12 completely seals all the elements on one side of the circuit wiring 18.
  • the lower surface of the circuit substrate 16 is also covered by the sealing layer 12, so that the moisture resistance of the smart power module 10 is improved; here, since the power component is also completely sealed by the sealing layer 12,
  • the sealing layer 12 should generally select a material with more angular crystals to improve its thermal conductivity.
  • the sealing layer 12 has a leakage tracking capability of not less than 500V.
  • the beneficial effect of the intelligent power module is that the circuit components, including the small and medium power circuit components, are electrically connected by flip-chip method, and the metal bonding wire is no longer needed, thereby saving the cost; Grease seal to maximize the resistance to moisture ingress; even if external moisture invades, it is difficult to form corrosion because there is no metal wire.
  • the substrate is connected to a certain potential of the circuit wiring, so that the substrate obtains the specific potential, shielding the electromagnetic interference and avoiding the occurrence of false triggering.
  • a method of manufacturing the smart power module including the following steps:
  • Step S1010 manufacturing a substrate as a carrier, covering the first surface of the substrate with an insulating layer; wherein the substrate further has a second surface opposite to the first surface;
  • Step S1020 opening a through hole penetrating the substrate at a predetermined position of the insulating layer
  • Step S1030 a circuit wiring layer is disposed on the surface of the insulating layer, and a potential pad electrically connected to the substrate through the through hole is preset in the circuit wiring layer;
  • Step S1040 assembling a circuit component on a surface of the circuit wiring layer, wherein the circuit component is assembled in an inverted manner;
  • Step S1050 covering a surface of the insulating layer with a sealing layer to cover the circuit wiring layer and the circuit component.
  • thermosetting resin frame is provided around the surface of the insulating layer; specifically, a thermoplastic resin is injected in the range of the thermosetting resin frame to seal the circuit wiring layer, the circuit component, and the substrate.
  • step S1040 Also included prior to step S1040 is the step of making separate, coated pins.
  • the step specifically includes: selecting a copper substrate, forming a row of pins by punching or etching the copper substrate, connecting the pins through the ribs; forming a nickel layer and a nickel tin on the surface of the lead The alloy layer gives a plated lead.
  • the method further includes the steps of: soldering the circuit component to the circuit wiring layer by reflow soldering; and removing the flux remaining in the insulating layer.
  • the fully encapsulated technology injection ensures the compactness of the intelligent power module to the greatest extent, which improves the reliability of the intelligent power module; eliminates the metal wire bonding and cleaning process, further improves the reliability of the intelligent power module, and saves
  • the equipment investment has improved the production efficiency, reduced the process control requirements, greatly reduced the manufacturing difficulty of the intelligent power module, improved the manufacturing yield, and further reduced the intelligence.
  • the cost of the power module has improved the production efficiency, reduced the process control requirements, greatly reduced the manufacturing difficulty of the intelligent power module, improved the manufacturing yield, and further reduced the intelligence.
  • the method of manufacturing the smart power module includes the following steps.
  • the first step 1602 of the present invention is a step of the present invention, and the step is a step of forming a circuit wiring on an aluminum plate of an appropriate size.
  • a circuit board 16 of a suitable size is designed according to a required circuit layout.
  • one size can be selected to be 64 mm ⁇ 30 mm, and the short sides of three pieces are connected to each other with a size of 50 mm ⁇ 75mm, forming a triple-plate unit composed of three smart power modules 10 metal circuit substrates 16.
  • An insulating layer 17 is provided on the surface of the aluminum substrate 16. Further, a copper foil as the circuit wiring 18 is bonded to the surface of the insulating layer 17. Then, the copper foil produced in this step is etched to partially remove the copper foil to form the circuit wiring 18, the lead pad 18A, and the wider potential pad 18B.
  • the through hole 70 can be formed on the potential pad 18B by a flat bottom drill or a pointed drill.
  • the flat bottom drill can ensure a large contact area of the substrate 16, but the drill has a short life and the sharp bottom drill can ensure The substrate 16 is drilled through the exposed success rate, but the exposed area of the aluminum substrate 16 is generally small.
  • the through hole 70 is opened by using a flat-bottomed drill, and the contact surface of the flat bottom is exposed on the substrate 16.
  • the aluminum substrate of a suitable size is formed by directly processing a 1 m ⁇ 1 m aluminum material, and the file is made of high-speed steel, and the motor is rotated at 5000 rpm, and the boring tool and the aluminum material are used.
  • the plane is cut at a right angle to make the edge of the 1100 aluminum material at right angles, and the burr is less than 10 ⁇ m. It can also be etched into a specific shape by chemical reaction through an etching tool. Referring to the X-X' line of FIG. 11(A), FIG. 11(B) is a cross-sectional view.
  • a gold layer may be formed on the surface of the circuit wiring 18 by means of electroplating gold or chemical immersion gold.
  • the thickness of the copper plate used to manufacture the circuit wiring 18 should be not less than 2 ounces, ensuring sufficient flow capacity.
  • the triple plate unit is sometimes separated by a V-CUT method, and the V-CUT can prevent the insulating layer 17 from being cracked during punching, thereby improving the long-term reliability of the smart power module 10.
  • the circuit wiring 18 no longer has a bonding point. Therefore, the area of the circuit substrate 16 can be reduced for the same circuit function, and the circuit board size of the prior art is generally small.
  • the design is 64 mm ⁇ 30 mm, and the circuit board of the present embodiment is designed to be 50 mm ⁇ 25 mm, which embodies the miniaturization effect after the bonding wire is not required.
  • the effect of the increased potential pad 18B on the area of the circuit wiring 18 is negligible.
  • the second step 1604 of the present invention is a step which is a feature of the present invention, and this step is a step of forming an independent lead 11 with a plating layer.
  • Each of the leads 11 is made of a copper substrate, and is formed into a strip shape having a length C of 25 mm, a width K of 1.5 mm, and a thickness H of 1 mm, as shown in Fig. 12(A); here, for ease of assembly, Pressing a certain arc at one end, as shown in Figure 12 (B);
  • a nickel layer is formed by electroless plating: a nickel layer is formed on the surface of the copper material having a specific shape by a mixed solution of a nickel salt and a sodium hypophosphite, and a suitable complexing agent is added, and the nickel metal is strong in the metal nickel. Passivation ability, can quickly form a very thin passivation film, resistant to atmospheric, alkali and some acid corrosion.
  • the nickel-plated crystal is extremely fine, and the thickness of the nickel layer is generally 0.1 ⁇ m;
  • the copper material having the formed shape and the nickel layer is immersed in the plating solution with the positive tin ions at room temperature to form a nickel-tin alloy layer on the surface of the nickel layer, and the thickness of the nickel layer is generally controlled at 5 ⁇ m.
  • the formation of the nickel layer greatly improves the protection and solderability;
  • the pin 11 of the present invention is a single pin, which is different from the entire row of pins of the prior art, because the circuit wiring 18 to which the pin 11 is fixed is only wrapped by a resin portion.
  • the impact strength is limited, and the separate pins avoid the process of cutting the ribs, and the systemic impact on the smart power module 10 of the present invention can be reduced.
  • the entire row of pins can still be used.
  • the third step 1606 of the present invention is a step of the present invention. This step is a step of flip-chip bonding the circuit element 14 on the surface of the circuit wiring 18 and arranging the lead pins 11.
  • the solder paste is sprayed into the through hole 70 by the dispenser 71, and the through hole 70 may be placed with solder paste by means of dispensing or by sputtering.
  • the height of the solder paste may be the same as or slightly higher than the height of the through hole 70, but the minimum height must exceed the insulating layer 17, reaching the circuit wiring 18 to ensure contact with the circuit wiring 70.
  • the prepared circuit wiring 18 is passed through a solder paste printer, and a steel mesh is used to apply a solder paste to a specific position of the circuit wiring 18, the steel mesh A thickness of 0.13 mm can be used.
  • the substrate 16 on which the solder paste is applied on the circuit wiring 18 is placed on the carrier 20, and the circuit component 14 is formed by an apparatus such as an SMT machine or a DA machine, including the circuit component 14 on which the heat sink 15 has been disposed. And the mounting of the pin 11, the circuit component 14 can be directly flipped at a specific position of the circuit wiring 18, and the pin 11 is placed on the pad 18A at one end, and the carrier 20 is required to be fixed at the other end.
  • the carrier 20 is made of a material such as synthetic stone.
  • the circuit substrate 16 placed on the carrier 20 is reflowed, the solder paste is cured, and the circuit component 14 and the lead 11 are fixed.
  • the reflow temperature generally does not exceed 300 ° C, and therefore, the power element 14 and the heat sink 15 are not separated at the time of reflow.
  • the fourth step 1608 of the present invention is a step of the present invention, and this step is a step of sealing the circuit wiring 18 with the sealing resin 12.
  • FIG. 14 is a cross-sectional view showing a step of sealing the circuit wiring 18 carried by the base 16 with a sealing resin using a mold 50.
  • the circuit wiring 18 is baked in an oxygen-free environment, the baking time should not be less than 2 hours, the baking temperature and the selection of 125 °C.
  • the base 16 on which the circuit board 18 is placed is transported to the models 44 and 45. By making A specific portion of the foot 11 is in contact with the fixture 46 to perform positioning of the circuit substrate 16.
  • the circuit substrate 16 is placed in a cavity formed inside the mold 50, and then the sealing resin is injected from the gate 53 to form the sealing layer 12.
  • the method of performing the sealing can be carried out by transfer molding using a thermosetting resin or injection molding using a thermosetting resin. Further, the gas inside the cavity of the sealing resin 12 injected corresponding to the gate 103 is discharged to the outside through the exhaust port 54.
  • the upper mold 44 and the lower mold 45 are not in contact with the module 10.
  • the position of the module 10 in the cavity is sometimes also used in the manner in which the upper mold 44 is disposed with the ejector pin.
  • Positioning the disadvantage is that it will leave air holes for the module 10, which affects the compactness of the module.
  • This embodiment is shown to maximize the compactness of the module 10, and the thimble is not configured for the upper mold; because the solution mainly applies the field of small and medium power modules.
  • the thickness of the sealing layer 12 on the bottom surface of the circuit substrate 16 is not critical, and is ⁇ 0.5 mm, so thimble positioning is not required.
  • the surface of the heat sink and the bottom surface of the circuit substrate 16 are exposed from the sealing layer 12. If the sealing layer 12 overflows heavily, a laser can be added to remove the glue or grind. The process of the glue.
  • the fifth step 1610 of the present invention is a process of performing the pin 11 molding and the module function test, and the smart power module is completed as a product through this process.
  • the portion other than the lead 11 is sealed by the resin 12. This step is required according to the length and shape used, for example, the outer lead 11 is bent into a shape at the position of the broken line 51 to facilitate subsequent assembly.
  • the pins 11 are independent of each other, some pins may not be on the same level after molding, which affects the contact, so it is generally necessary to first test the machine gold finger. Contact test with the pin. If the contact test does not pass, the pin 11 needs to be trimmed until the contact test passes, and then the electrical characteristic test is performed, including insulation withstand voltage, static power consumption, delay time, etc. For the project, the qualified person is the finished product.
  • the smart power module 10 shown in FIG. 10 is completed by the above steps.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

L'invention concerne un module de puissance intelligent et son procédé de fabrication Le module de puissance intelligent comprend : un substrat (16) servant de support et ayant une première surface et une seconde surface opposée à la première surface; une couche isolante (17) disposée sur une première surface du substrat; une couche de câblage de circuit (18) formée à la surface de la couche isolante; des éléments de circuit (14) montés en sens inverse et soudés en des endroits prédéterminés sur une surface supérieure de la couche de câblage de circuit; et une couche d'étanchéité (12) revêtue à la surface de la couche isolante et recouvrant la couche de câblage de circuit et les éléments de circuit. Les éléments de circuit sont connectés électriquement dans un mode de montage inversé, aucun fil métallique de liaison n'est nécessaire, et le coût est réduit. Une ailette de rayonnement et un substrat en aluminium sont totalement exposés à l'extérieur de la résine, et l'effet de rayonnement est maximisé. Même si l'humidité extérieure pénètre, il est difficile de provoquer la corrosion parce qu'il n'y a pas de fil métallique.
PCT/CN2016/113978 2016-07-29 2016-12-30 Module de puissance intelligent et son procédé de fabrication WO2018018848A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN201610616070.9A CN106024652A (zh) 2016-07-29 2016-07-29 一种智能功率模块及其制造方法
CN201610624916.3 2016-07-29
CN201610616070.9 2016-07-29
CN201610624916.3A CN106098650A (zh) 2016-07-29 2016-07-29 一种智能功率模块及其制造方法

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CN113113401A (zh) * 2021-04-27 2021-07-13 广东汇芯半导体有限公司 半导体电路和半导体电路的制造方法
CN114220806A (zh) * 2021-12-21 2022-03-22 广东汇芯半导体有限公司 具有整流电路的半导体电路和半导体电路的制备方法
CN114340175A (zh) * 2022-01-10 2022-04-12 鹤山市泰利诺电子有限公司 电路板锣板方法
CN114666975A (zh) * 2022-03-15 2022-06-24 广东汇芯半导体有限公司 一种半导体电路结构及其制造方法
CN115513065A (zh) * 2021-08-26 2022-12-23 广东汇芯半导体有限公司 半导体电路的制备方法

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WO2000007238A1 (fr) * 1998-07-31 2000-02-10 Ixys Corporation Boitier semi-conducteur haute intensite a isolation electrique
CN101432872A (zh) * 2004-09-24 2009-05-13 吉尔科有限公司 功率led封装体
US8263437B2 (en) * 2008-09-05 2012-09-11 STATS ChiPAC, Ltd. Semiconductor device and method of forming an IPD over a high-resistivity encapsulant separated from other IPDS and baseband circuit
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Publication number Priority date Publication date Assignee Title
CN113113401A (zh) * 2021-04-27 2021-07-13 广东汇芯半导体有限公司 半导体电路和半导体电路的制造方法
CN115513065A (zh) * 2021-08-26 2022-12-23 广东汇芯半导体有限公司 半导体电路的制备方法
CN114220806A (zh) * 2021-12-21 2022-03-22 广东汇芯半导体有限公司 具有整流电路的半导体电路和半导体电路的制备方法
CN114340175A (zh) * 2022-01-10 2022-04-12 鹤山市泰利诺电子有限公司 电路板锣板方法
CN114666975A (zh) * 2022-03-15 2022-06-24 广东汇芯半导体有限公司 一种半导体电路结构及其制造方法

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