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WO2008123289A1 - 窒化珪素膜および不揮発性半導体メモリ装置 - Google Patents

窒化珪素膜および不揮発性半導体メモリ装置 Download PDF

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Publication number
WO2008123289A1
WO2008123289A1 PCT/JP2008/055679 JP2008055679W WO2008123289A1 WO 2008123289 A1 WO2008123289 A1 WO 2008123289A1 JP 2008055679 W JP2008055679 W JP 2008055679W WO 2008123289 A1 WO2008123289 A1 WO 2008123289A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon nitride
nitride film
memory device
semiconductor memory
plasma
Prior art date
Application number
PCT/JP2008/055679
Other languages
English (en)
French (fr)
Inventor
Seiichi Miyazaki
Masayuki Kohno
Tatsuo Nishita
Toshio Nakanishi
Yoshihiro Hirota
Original Assignee
Tokyo Electron Limited
Hiroshima University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007254273A external-priority patent/JP2008270706A/ja
Application filed by Tokyo Electron Limited, Hiroshima University filed Critical Tokyo Electron Limited
Priority to CN200880009852XA priority Critical patent/CN101641783B/zh
Priority to US12/532,681 priority patent/US20100140683A1/en
Publication of WO2008123289A1 publication Critical patent/WO2008123289A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Non-Volatile Memory (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

　半導体メモリ装置の電荷蓄積層として有用な優れた電荷蓄積能力を有する窒化珪素膜が提供される。膜の厚さ方向に略均等なトラップ密度を有する窒化珪素膜は、高い電荷蓄積能力を有する。この窒化珪素膜は、複数の孔を有する平面アンテナ３１によりチャンバー１内にマイクロ波を導入するプラズマ処理装置１００を用い、チャンバー１内に窒素含有化合物と珪素含有化合物とを含む原料ガスを導入してマイクロ波によりプラズマを発生させ、該プラズマにより被処理体の表面に窒化珪素膜を堆積させるプラズマＣＶＤによって成膜される。
PCT/JP2008/055679 2007-03-26 2008-03-26 窒化珪素膜および不揮発性半導体メモリ装置 WO2008123289A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200880009852XA CN101641783B (zh) 2007-03-26 2008-03-26 氮化硅膜和非易失性半导体存储器件
US12/532,681 US20100140683A1 (en) 2007-03-26 2008-03-26 Silicon nitride film and nonvolatile semiconductor memory device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-079852 2007-03-26
JP2007079852 2007-03-26
JP2007254273A JP2008270706A (ja) 2007-03-26 2007-09-28 窒化珪素膜および不揮発性半導体メモリ装置
JP2007-254273 2007-09-28

Publications (1)

Publication Number Publication Date
WO2008123289A1 true WO2008123289A1 (ja) 2008-10-16

Family

ID=39830777

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/055679 WO2008123289A1 (ja) 2007-03-26 2008-03-26 窒化珪素膜および不揮発性半導体メモリ装置

Country Status (1)

Country Link
WO (1) WO2008123289A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010113928A1 (ja) * 2009-03-31 2010-10-07 東京エレクトロン株式会社 窒化珪素膜の成膜方法、半導体メモリ装置の製造方法およびプラズマｃｖｄ装置
US8198671B2 (en) * 2009-04-22 2012-06-12 Applied Materials, Inc. Modification of charge trap silicon nitride with oxygen plasma

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1140682A (ja) * 1997-07-18 1999-02-12 Sony Corp 不揮発性半導体記憶装置及びその製造方法
WO2001069665A1 (en) * 2000-03-13 2001-09-20 Tadahiro Ohmi Method for forming dielectric film
JP2004214506A (ja) * 2003-01-07 2004-07-29 Sony Corp 不揮発性半導体メモリ装置の動作方法
JP2004235519A (ja) * 2003-01-31 2004-08-19 Renesas Technology Corp 不揮発性半導体記憶装置
JP2004241781A (ja) * 2003-02-07 2004-08-26 Samsung Electronics Co Ltd メモリ機能を有する単電子トランジスタおよびその製造方法
JP2005347679A (ja) * 2004-06-07 2005-12-15 Renesas Technology Corp 不揮発性半導体記憶装置の製造方法
JP2006190990A (ja) * 2004-12-10 2006-07-20 Toshiba Corp 半導体装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1140682A (ja) * 1997-07-18 1999-02-12 Sony Corp 不揮発性半導体記憶装置及びその製造方法
WO2001069665A1 (en) * 2000-03-13 2001-09-20 Tadahiro Ohmi Method for forming dielectric film
JP2004214506A (ja) * 2003-01-07 2004-07-29 Sony Corp 不揮発性半導体メモリ装置の動作方法
JP2004235519A (ja) * 2003-01-31 2004-08-19 Renesas Technology Corp 不揮発性半導体記憶装置
JP2004241781A (ja) * 2003-02-07 2004-08-26 Samsung Electronics Co Ltd メモリ機能を有する単電子トランジスタおよびその製造方法
JP2005347679A (ja) * 2004-06-07 2005-12-15 Renesas Technology Corp 不揮発性半導体記憶装置の製造方法
JP2006190990A (ja) * 2004-12-10 2006-07-20 Toshiba Corp 半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010113928A1 (ja) * 2009-03-31 2010-10-07 東京エレクトロン株式会社 窒化珪素膜の成膜方法、半導体メモリ装置の製造方法およびプラズマｃｖｄ装置
US8198671B2 (en) * 2009-04-22 2012-06-12 Applied Materials, Inc. Modification of charge trap silicon nitride with oxygen plasma

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