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WO2008123289A1 - Silicon nitride film and nonvolatile semiconductor memory device - Google Patents

Silicon nitride film and nonvolatile semiconductor memory device Download PDF

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Publication number
WO2008123289A1
WO2008123289A1 PCT/JP2008/055679 JP2008055679W WO2008123289A1 WO 2008123289 A1 WO2008123289 A1 WO 2008123289A1 JP 2008055679 W JP2008055679 W JP 2008055679W WO 2008123289 A1 WO2008123289 A1 WO 2008123289A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon nitride
nitride film
memory device
semiconductor memory
plasma
Prior art date
Application number
PCT/JP2008/055679
Other languages
French (fr)
Japanese (ja)
Inventor
Seiichi Miyazaki
Masayuki Kohno
Tatsuo Nishita
Toshio Nakanishi
Yoshihiro Hirota
Original Assignee
Tokyo Electron Limited
Hiroshima University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007254273A external-priority patent/JP2008270706A/en
Application filed by Tokyo Electron Limited, Hiroshima University filed Critical Tokyo Electron Limited
Priority to CN200880009852XA priority Critical patent/CN101641783B/en
Priority to US12/532,681 priority patent/US20100140683A1/en
Publication of WO2008123289A1 publication Critical patent/WO2008123289A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Non-Volatile Memory (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Provided is a silicon nitride film having excellent charge storage performance effective as a charge storage layer for a semiconductor memory device. The silicon nitride film having substantially uniform trap density in the film thickness direction has high charge storage performance. The silicon nitride film is formed by plasma CVD by using a plasma processing apparatus (100) wherein microwaves are introduced into a chamber (1) by a flat antenna (31) having a plurality of holes. Plasma is generated by the microwaves by introducing a material gas, which contains a nitrogen containing compound and a silicon containing compound, into the chamber (1), and the silicon nitride film is deposited on the surface of a body to be processed by the plasma.
PCT/JP2008/055679 2007-03-26 2008-03-26 Silicon nitride film and nonvolatile semiconductor memory device WO2008123289A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200880009852XA CN101641783B (en) 2007-03-26 2008-03-26 silicon nitride film and nonvolatile semiconductor memory device
US12/532,681 US20100140683A1 (en) 2007-03-26 2008-03-26 Silicon nitride film and nonvolatile semiconductor memory device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-079852 2007-03-26
JP2007079852 2007-03-26
JP2007254273A JP2008270706A (en) 2007-03-26 2007-09-28 Silicon nitride film and nonvolatile semiconductor memory device
JP2007-254273 2007-09-28

Publications (1)

Publication Number Publication Date
WO2008123289A1 true WO2008123289A1 (en) 2008-10-16

Family

ID=39830777

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/055679 WO2008123289A1 (en) 2007-03-26 2008-03-26 Silicon nitride film and nonvolatile semiconductor memory device

Country Status (1)

Country Link
WO (1) WO2008123289A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010113928A1 (en) * 2009-03-31 2010-10-07 東京エレクトロン株式会社 Method for forming silicon nitride film, method for manufacturing semiconductor memory device, and plasma cvd apparatus
US8198671B2 (en) * 2009-04-22 2012-06-12 Applied Materials, Inc. Modification of charge trap silicon nitride with oxygen plasma

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1140682A (en) * 1997-07-18 1999-02-12 Sony Corp Non-volatile semiconductor memory and its manufacture
WO2001069665A1 (en) * 2000-03-13 2001-09-20 Tadahiro Ohmi Method for forming dielectric film
JP2004214506A (en) * 2003-01-07 2004-07-29 Sony Corp Method for operating nonvolatile semiconductor memory device
JP2004235519A (en) * 2003-01-31 2004-08-19 Renesas Technology Corp Nonvolatile semiconductor memory device
JP2004241781A (en) * 2003-02-07 2004-08-26 Samsung Electronics Co Ltd Single electron transistor having memory function and method of manufacturing the same
JP2005347679A (en) * 2004-06-07 2005-12-15 Renesas Technology Corp Method for manufacturing nonvolatile semiconductor memory device
JP2006190990A (en) * 2004-12-10 2006-07-20 Toshiba Corp Semiconductor device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1140682A (en) * 1997-07-18 1999-02-12 Sony Corp Non-volatile semiconductor memory and its manufacture
WO2001069665A1 (en) * 2000-03-13 2001-09-20 Tadahiro Ohmi Method for forming dielectric film
JP2004214506A (en) * 2003-01-07 2004-07-29 Sony Corp Method for operating nonvolatile semiconductor memory device
JP2004235519A (en) * 2003-01-31 2004-08-19 Renesas Technology Corp Nonvolatile semiconductor memory device
JP2004241781A (en) * 2003-02-07 2004-08-26 Samsung Electronics Co Ltd Single electron transistor having memory function and method of manufacturing the same
JP2005347679A (en) * 2004-06-07 2005-12-15 Renesas Technology Corp Method for manufacturing nonvolatile semiconductor memory device
JP2006190990A (en) * 2004-12-10 2006-07-20 Toshiba Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010113928A1 (en) * 2009-03-31 2010-10-07 東京エレクトロン株式会社 Method for forming silicon nitride film, method for manufacturing semiconductor memory device, and plasma cvd apparatus
US8198671B2 (en) * 2009-04-22 2012-06-12 Applied Materials, Inc. Modification of charge trap silicon nitride with oxygen plasma

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