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WO2008114363A1 - 半導体装置の製造装置、および半導体装置の製造方法 - Google Patents

半導体装置の製造装置、および半導体装置の製造方法 Download PDF

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Publication number
WO2008114363A1
WO2008114363A1 PCT/JP2007/055427 JP2007055427W WO2008114363A1 WO 2008114363 A1 WO2008114363 A1 WO 2008114363A1 JP 2007055427 W JP2007055427 W JP 2007055427W WO 2008114363 A1 WO2008114363 A1 WO 2008114363A1
Authority
WO
WIPO (PCT)
Prior art keywords
feed gas
semiconductor device
gas
chamber
blown
Prior art date
Application number
PCT/JP2007/055427
Other languages
English (en)
French (fr)
Inventor
Yukihiro Hashimoto
Original Assignee
Fujitsu Microelectronics Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Microelectronics Limited filed Critical Fujitsu Microelectronics Limited
Priority to JP2009504963A priority Critical patent/JPWO2008114363A1/ja
Priority to PCT/JP2007/055427 priority patent/WO2008114363A1/ja
Publication of WO2008114363A1 publication Critical patent/WO2008114363A1/ja
Priority to US12/539,017 priority patent/US20090298267A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31608—Deposition of SiO2
    • H01L21/31612—Deposition of SiO2 on a silicon body

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

　原料ガスの吹き付け位置に応じて原料ガスの吹き付け量を調整する半導体装置の製造装置および製造方法を提供することを課題とする。半導体ウェハ２が収容されたチャンバー３内に原料ガスを供給し、化学触媒反応を利用して該半導体ウェハ２の表面に薄膜を堆積させる半導体製造装置１であって、前記半導体ウェハ２を収容するチャンバー３と、前記薄膜の原料である原料ガスを前記チャンバー３内に送気する原料ガス供給手段４と、前記チャンバー３内に収容された前記半導体ウェハ２の表面に前記原料ガス供給手段４から送気される原料ガスを吹き付けるガス吹き出し口を有するガス吹き出し手段５であって、原料ガスの吹き付け位置に応じて該ガス吹き出し口の状態を変化させることにより該原料ガスの吹き付け量を調整するガス吹き出し手段５と、を備える。
PCT/JP2007/055427 2007-03-16 2007-03-16 半導体装置の製造装置、および半導体装置の製造方法 WO2008114363A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009504963A JPWO2008114363A1 (ja) 2007-03-16 2007-03-16 半導体装置の製造装置、および半導体装置の製造方法
PCT/JP2007/055427 WO2008114363A1 (ja) 2007-03-16 2007-03-16 半導体装置の製造装置、および半導体装置の製造方法
US12/539,017 US20090298267A1 (en) 2007-03-16 2009-08-11 Semiconductor device manufacturing apparatus and semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/055427 WO2008114363A1 (ja) 2007-03-16 2007-03-16 半導体装置の製造装置、および半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/539,017 Continuation US20090298267A1 (en) 2007-03-16 2009-08-11 Semiconductor device manufacturing apparatus and semiconductor device manufacturing method

Publications (1)

Publication Number Publication Date
WO2008114363A1 true WO2008114363A1 (ja) 2008-09-25

Family

ID=39765485

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PCT/JP2007/055427 WO2008114363A1 (ja) 2007-03-16 2007-03-16 半導体装置の製造装置、および半導体装置の製造方法

Country Status (3)

Country Link
US (1) US20090298267A1 (ja)
JP (1) JPWO2008114363A1 (ja)
WO (1) WO2008114363A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012532472A (ja) * 2009-07-08 2012-12-13 ユ−ジーン テクノロジー カンパニー．リミテッド 拡散板を選択的に挿入設置する基板処理装置及び基板処理方法
JP6702514B1 (ja) * 2018-11-30 2020-06-03 株式会社明電舎 酸化膜形成装置
JP2021082798A (ja) * 2019-11-14 2021-05-27 ピーエスケー インコーポレイテッド バッフルユニット、これを含む基板処理装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101320620B1 (ko) * 2012-04-10 2013-10-23 한국과학기술연구원 다이아몬드 합성을 위한 화학기상증착 장치 및 이를 이용한 다이아몬드 합성 방법
CN114381715B (zh) * 2020-10-20 2024-10-01 中国科学院微电子研究所 一种喷头、半导体设备以及镀膜方法
CN115852338A (zh) * 2022-12-01 2023-03-28 拓荆科技股份有限公司 一种多层喷淋板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000294538A (ja) * 1999-04-01 2000-10-20 Matsushita Electric Ind Co Ltd 真空処理装置
JP2002004053A (ja) * 2000-06-14 2002-01-09 Hitachi Ltd 薄膜形成方法及び薄膜形成装置
JP2003203908A (ja) * 2002-01-10 2003-07-18 Sharp Corp プラズマ処理装置
JP2005197467A (ja) * 2004-01-07 2005-07-21 Matsushita Electric Ind Co Ltd 基板処理装置及びそのクリーニング方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5728602A (en) * 1996-06-03 1998-03-17 Vlsi Technology, Inc. Semiconductor wafer manufacturing process with high-flow-rate low-pressure purge cycles
US6296711B1 (en) * 1998-04-14 2001-10-02 Cvd Systems, Inc. Film processing system
US6518218B1 (en) * 1999-03-31 2003-02-11 General Electric Company Catalyst system for producing carbon fibrils
JP2001267611A (ja) * 2000-01-13 2001-09-28 Sharp Corp 薄膜太陽電池及びその製造方法
US6905663B1 (en) * 2000-04-18 2005-06-14 Jose I. Arno Apparatus and process for the abatement of semiconductor manufacturing effluents containing fluorine gas
US6635117B1 (en) * 2000-04-26 2003-10-21 Axcelis Technologies, Inc. Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system
KR100653796B1 (ko) * 2001-03-12 2006-12-05 가부시키가이샤 히타치세이사쿠쇼 반도체 집적 회로 장치의 제조 방법
KR100454120B1 (ko) * 2001-11-12 2004-10-26 삼성전자주식회사 화학적 기계적 연마 장비의 슬러리 공급 장치 및 방법
US6818094B2 (en) * 2003-01-29 2004-11-16 Applied Materials, Inc. Reciprocating gas valve for pulsing a gas
US6868859B2 (en) * 2003-01-29 2005-03-22 Applied Materials, Inc. Rotary gas valve for pulsing a gas
KR100525102B1 (ko) * 2003-11-28 2005-11-01 주식회사 하이닉스반도체 반도체소자의 실리콘질화막 증착방법
US7892357B2 (en) * 2004-01-12 2011-02-22 Axcelis Technologies, Inc. Gas distribution plate assembly for plasma reactors
TW200603287A (en) * 2004-03-26 2006-01-16 Ulvac Inc Unit layer posttreating catalytic chemical vapor deposition apparatus and method of film formation therewith
EP1598110A1 (en) * 2004-04-22 2005-11-23 Rohm and Haas Company Structured oxidation catalysts
US7712434B2 (en) * 2004-04-30 2010-05-11 Lam Research Corporation Apparatus including showerhead electrode and heater for plasma processing
US7396743B2 (en) * 2004-06-10 2008-07-08 Singh Kaushal K Low temperature epitaxial growth of silicon-containing films using UV radiation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000294538A (ja) * 1999-04-01 2000-10-20 Matsushita Electric Ind Co Ltd 真空処理装置
JP2002004053A (ja) * 2000-06-14 2002-01-09 Hitachi Ltd 薄膜形成方法及び薄膜形成装置
JP2003203908A (ja) * 2002-01-10 2003-07-18 Sharp Corp プラズマ処理装置
JP2005197467A (ja) * 2004-01-07 2005-07-21 Matsushita Electric Ind Co Ltd 基板処理装置及びそのクリーニング方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012532472A (ja) * 2009-07-08 2012-12-13 ユ−ジーン テクノロジー カンパニー．リミテッド 拡散板を選択的に挿入設置する基板処理装置及び基板処理方法
JP6702514B1 (ja) * 2018-11-30 2020-06-03 株式会社明電舎 酸化膜形成装置
US11306396B2 (en) 2018-11-30 2022-04-19 Meidensha Corporation Oxide film forming device
JP2021082798A (ja) * 2019-11-14 2021-05-27 ピーエスケー インコーポレイテッド バッフルユニット、これを含む基板処理装置
JP2021180318A (ja) * 2019-11-14 2021-11-18 ピーエスケー インコーポレイテッド バッフルユニット、これを含む基板処理装置
JP7190540B2 (ja) 2019-11-14 2022-12-15 ピーエスケー インコーポレイテッド バッフルユニット、これを含む基板処理装置

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JPWO2008114363A1 (ja) 2010-06-24
US20090298267A1 (en) 2009-12-03

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