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WO2009038168A1 - 成膜装置および成膜方法 - Google Patents

成膜装置および成膜方法 Download PDF

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Publication number
WO2009038168A1
WO2009038168A1 PCT/JP2008/066969 JP2008066969W WO2009038168A1 WO 2009038168 A1 WO2009038168 A1 WO 2009038168A1 JP 2008066969 W JP2008066969 W JP 2008066969W WO 2009038168 A1 WO2009038168 A1 WO 2009038168A1
Authority
WO
WIPO (PCT)
Prior art keywords
film forming
gas
processing chamber
gas supply
forming apparatus
Prior art date
Application number
PCT/JP2008/066969
Other languages
English (en)
French (fr)
Inventor
Kenji Matsumoto
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to JP2009533195A priority Critical patent/JPWO2009038168A1/ja
Priority to CN200880108045A priority patent/CN101802255A/zh
Publication of WO2009038168A1 publication Critical patent/WO2009038168A1/ja
Priority to US12/727,992 priority patent/US20100219157A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76864—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76867—Barrier, adhesion or liner layers characterized by methods of formation other than PVD, CVD or deposition from a liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1068—Formation and after-treatment of conductors
    • H01L2221/1073—Barrier, adhesion or liner layers
    • H01L2221/1084—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L2221/1089—Stacks of seed layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

　成膜装置（１００）は、ウエハＷを収容する処理チャンバ（２）と、処理チャンバ（２）内にＣｕ原料ガスおよびＭｎ原料ガスを含むガスを供給するガス供給部（１０）と、ガス供給部（１０）からのガスを処理チャンバ（２）内に導入するシャワーヘッド（４）と、処理チャンバ（２）内を排気する真空ポンプ（８）とを具備し、ガス供給部（１０）は、Ｃｕ原料貯蔵部（２１）と、Ｍｎ原料貯蔵部（２２）と、Ｃｕ原料とＭｎ原料が導かれて混合されるマニホールド（４０）と、マニホールド（４０）で形成された混合体を気化する一つの気化器（４２）と、気化されて形成された原料ガスをシャワーヘッド（４）に導く原料ガス供給配管（５４）とを有する。
PCT/JP2008/066969 2007-09-21 2008-09-19 成膜装置および成膜方法 WO2009038168A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009533195A JPWO2009038168A1 (ja) 2007-09-21 2008-09-19 成膜装置および成膜方法
CN200880108045A CN101802255A (zh) 2007-09-21 2008-09-19 成膜装置和成膜方法
US12/727,992 US20100219157A1 (en) 2007-09-21 2010-03-19 Film forming apparatus and film forming method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-244623 2007-09-21
JP2007244623 2007-09-21

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/727,992 Continuation US20100219157A1 (en) 2007-09-21 2010-03-19 Film forming apparatus and film forming method

Publications (1)

Publication Number Publication Date
WO2009038168A1 true WO2009038168A1 (ja) 2009-03-26

Family

ID=40467977

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066969 WO2009038168A1 (ja) 2007-09-21 2008-09-19 成膜装置および成膜方法

Country Status (5)

Country Link
US (1) US20100219157A1 (ja)
JP (1) JPWO2009038168A1 (ja)
KR (1) KR20100043289A (ja)
CN (1) CN101802255A (ja)
WO (1) WO2009038168A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7618038B2 (ja) 2020-11-20 2025-01-20 アプライド マテリアルズ インコーポレイテッド 化学物質デリバリシステムのアンプル内の圧力揺らぎを減少させるための方法および装置

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US7883745B2 (en) * 2007-07-30 2011-02-08 Micron Technology, Inc. Chemical vaporizer for material deposition systems and associated methods
JP5133013B2 (ja) * 2007-09-10 2013-01-30 東京エレクトロン株式会社 成膜装置の排気系構造、成膜装置、および排ガスの処理方法
US8628618B2 (en) 2009-09-29 2014-01-14 Novellus Systems Inc. Precursor vapor generation and delivery system with filters and filter monitoring system
JP2013004614A (ja) * 2011-06-14 2013-01-07 Toshiba Corp 塗布膜形成方法及び塗布膜形成装置
US8765602B2 (en) 2012-08-30 2014-07-01 International Business Machines Corporation Doping of copper wiring structures in back end of line processing
JP6078335B2 (ja) * 2012-12-27 2017-02-08 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、気化システム、気化器およびプログラム
KR102137145B1 (ko) * 2013-10-30 2020-07-24 삼성디스플레이 주식회사 식각장치, 이를 이용한 식각방법 및 표시장치의 제조방법
WO2015177916A1 (ja) * 2014-05-23 2015-11-26 株式会社シンクロン 薄膜の成膜方法及び成膜装置
JP6450469B2 (ja) * 2015-11-10 2019-01-09 東京エレクトロン株式会社 気化器、成膜装置及び温度制御方法
US10453721B2 (en) 2016-03-15 2019-10-22 Applied Materials, Inc. Methods and assemblies for gas flow ratio control
US10269600B2 (en) * 2016-03-15 2019-04-23 Applied Materials, Inc. Methods and assemblies for gas flow ratio control
CN113366602A (zh) * 2019-01-31 2021-09-07 朗姆研究公司 用于先进半导体应用的多通道液体输送系统
JP7321730B2 (ja) * 2019-03-14 2023-08-07 キオクシア株式会社 半導体装置の製造方法
KR102681739B1 (ko) * 2020-10-15 2024-07-04 삼성전자주식회사 기판 제조 장치 및 그의 제어 방법 방법

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JPH0794426A (ja) * 1993-09-24 1995-04-07 Ryoden Semiconductor Syst Eng Kk Ｃｖｄ装置
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JPS6364290A (ja) * 1986-09-05 1988-03-22 株式会社日立製作所 Ｅｌ素子製造装置
JPH0794426A (ja) * 1993-09-24 1995-04-07 Ryoden Semiconductor Syst Eng Kk Ｃｖｄ装置
JPH09181054A (ja) * 1995-11-17 1997-07-11 Air Prod And Chem Inc トリフルオロ酢酸及びその誘導体を使用するプラズマエッチング法
JPH09219497A (ja) * 1996-02-13 1997-08-19 Mitsubishi Electric Corp 高誘電率薄膜構造、高誘電率薄膜形成方法および高誘電率薄膜形成装置
JPH11200048A (ja) * 1998-01-21 1999-07-27 Tori Chemical Kenkyusho:Kk 銅合金膜形成材料及び銅合金膜形成方法
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JP2005330546A (ja) * 2004-05-20 2005-12-02 Fujitsu Ltd 金属膜の処理方法及び金属膜の処理装置
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JP2006063352A (ja) * 2004-08-24 2006-03-09 Toyoshima Seisakusho:Kk ランタニド系金属含有薄膜製造に用いるｃｖｄ用原料溶液及びこれを用いた薄膜の製造方法
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7618038B2 (ja) 2020-11-20 2025-01-20 アプライド マテリアルズ インコーポレイテッド 化学物質デリバリシステムのアンプル内の圧力揺らぎを減少させるための方法および装置

Also Published As

Publication number Publication date
KR20100043289A (ko) 2010-04-28
US20100219157A1 (en) 2010-09-02
CN101802255A (zh) 2010-08-11
JPWO2009038168A1 (ja) 2011-01-06

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