+

WO2003065024A3 - Ensemble capteur gmr et aimant antiferromagnetique synthetique associe - Google Patents

Ensemble capteur gmr et aimant antiferromagnetique synthetique associe Download PDF

Info

Publication number
WO2003065024A3
WO2003065024A3 PCT/EP2003/000605 EP0300605W WO03065024A3 WO 2003065024 A3 WO2003065024 A3 WO 2003065024A3 EP 0300605 W EP0300605 W EP 0300605W WO 03065024 A3 WO03065024 A3 WO 03065024A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
ferromagnet
sensor assembly
synthetic anti
gmr sensor
Prior art date
Application number
PCT/EP2003/000605
Other languages
German (de)
English (en)
Other versions
WO2003065024A2 (fr
Inventor
Peter Gruenberg
Daniel Buergler
Rashid Gareev
Reinert Schreiber
Original Assignee
Forschungszentrum Juelich Gmbh
Peter Gruenberg
Daniel Buergler
Rashid Gareev
Reinert Schreiber
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich Gmbh, Peter Gruenberg, Daniel Buergler, Rashid Gareev, Reinert Schreiber filed Critical Forschungszentrum Juelich Gmbh
Publication of WO2003065024A2 publication Critical patent/WO2003065024A2/fr
Publication of WO2003065024A3 publication Critical patent/WO2003065024A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)

Abstract

L'invention concerne un ensemble capteur GMR comportant un empilage GMR (2) composé d'une couche ferromagnétique à sens de magnétisation légèrement orientable (la couche libre (3)), d'une couche ferromagnétique à orientation magnétique fixe (la couche fixe (4)) et d'une couche intermédiaire (5) non magnétique. La couche fixe (4) constitue la première couche ferromagnétique d'un aimant antiferromagnétique synthétique (6), lequel comprend en outre une deuxième couche ferromagnétique (8) et une couche intermédiaire (7). L'invention est caractérisée en ce que la couche intermédiaire (7) de l'aimant antiferromagnétique synthétique (6) est faite d'un matériau de valeur ohmique élevée et électriquement isolant.
PCT/EP2003/000605 2002-01-28 2003-01-22 Ensemble capteur gmr et aimant antiferromagnetique synthetique associe WO2003065024A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2002103466 DE10203466A1 (de) 2002-01-28 2002-01-28 GMR-Sensoranordnung und synthetischer Anti-Ferromagnet dafür
DE10203466.4 2002-01-28

Publications (2)

Publication Number Publication Date
WO2003065024A2 WO2003065024A2 (fr) 2003-08-07
WO2003065024A3 true WO2003065024A3 (fr) 2003-12-24

Family

ID=27588132

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2003/000605 WO2003065024A2 (fr) 2002-01-28 2003-01-22 Ensemble capteur gmr et aimant antiferromagnetique synthetique associe

Country Status (2)

Country Link
DE (1) DE10203466A1 (fr)
WO (1) WO2003065024A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7367109B2 (en) 2005-01-31 2008-05-06 Hitachi Global Storage Technologies Netherlands B.V. Method of fabricating magnetic sensors with pinned layers with zero net magnetic moment
US7554775B2 (en) 2005-02-28 2009-06-30 Hitachi Global Storage Technologies Netherlands B.V. GMR sensors with strongly pinning and pinned layers
FR2932593B1 (fr) * 2008-06-13 2010-09-03 Parkeon Systeme et procede de verification de la validite d'un article de valeur, et horodateur comprenant un tel systeme

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5686838A (en) * 1992-12-21 1997-11-11 Siemens Aktiengesellschaft Magnetoresistive sensor having at least a layer system and a plurality of measuring contacts disposed thereon, and a method of producing the sensor
EP0971423A1 (fr) * 1998-07-10 2000-01-12 Interuniversitair Micro-Elektronica Centrum Vzw Structure à valve de spin et méthode de fabrication
WO2000017660A1 (fr) * 1998-09-22 2000-03-30 Robert Bosch Gmbh Composant electronique
WO2000019226A1 (fr) * 1998-09-28 2000-04-06 Seagate Technology Llc Montage en sandwich a magnetoresistance geante (gmr) quadricouche
WO2000063714A1 (fr) * 1999-04-20 2000-10-26 Seagate Technology Llc CAPTEUR MAGNETORESISTIF GEANT AVEC COUCHE DE FIXAGE CrMnPt ET COUCHE A GERMES NiFeCr
WO2001031357A1 (fr) * 1999-10-28 2001-05-03 Seagate Technology Llc Capteur a effet gmr
US6278592B1 (en) * 1999-08-17 2001-08-21 Seagate Technology Llc GMR spin valve having a bilayer TaN/NiFeCr seedlayer to improve GMR response and exchange pinning field
WO2001065269A1 (fr) * 2000-03-02 2001-09-07 Forschungszentrum Jülich GmbH Dispositif de mesure de champ magnetique a montage en pont d'elements de tunnel de spin, et procede de fabrication
US6292336B1 (en) * 1999-09-30 2001-09-18 Headway Technologies, Inc. Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient
US6331773B1 (en) * 1999-04-16 2001-12-18 Storage Technology Corporation Pinned synthetic anti-ferromagnet with oxidation protection layer

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0971424A3 (fr) * 1998-07-10 2004-08-25 Interuniversitair Microelektronica Centrum Vzw Structure à valve de spin et procédé de fabrication

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5686838A (en) * 1992-12-21 1997-11-11 Siemens Aktiengesellschaft Magnetoresistive sensor having at least a layer system and a plurality of measuring contacts disposed thereon, and a method of producing the sensor
EP0971423A1 (fr) * 1998-07-10 2000-01-12 Interuniversitair Micro-Elektronica Centrum Vzw Structure à valve de spin et méthode de fabrication
WO2000017660A1 (fr) * 1998-09-22 2000-03-30 Robert Bosch Gmbh Composant electronique
WO2000019226A1 (fr) * 1998-09-28 2000-04-06 Seagate Technology Llc Montage en sandwich a magnetoresistance geante (gmr) quadricouche
US6331773B1 (en) * 1999-04-16 2001-12-18 Storage Technology Corporation Pinned synthetic anti-ferromagnet with oxidation protection layer
WO2000063714A1 (fr) * 1999-04-20 2000-10-26 Seagate Technology Llc CAPTEUR MAGNETORESISTIF GEANT AVEC COUCHE DE FIXAGE CrMnPt ET COUCHE A GERMES NiFeCr
US6278592B1 (en) * 1999-08-17 2001-08-21 Seagate Technology Llc GMR spin valve having a bilayer TaN/NiFeCr seedlayer to improve GMR response and exchange pinning field
US6292336B1 (en) * 1999-09-30 2001-09-18 Headway Technologies, Inc. Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient
WO2001031357A1 (fr) * 1999-10-28 2001-05-03 Seagate Technology Llc Capteur a effet gmr
WO2001065269A1 (fr) * 2000-03-02 2001-09-07 Forschungszentrum Jülich GmbH Dispositif de mesure de champ magnetique a montage en pont d'elements de tunnel de spin, et procede de fabrication

Also Published As

Publication number Publication date
WO2003065024A2 (fr) 2003-08-07
DE10203466A1 (de) 2003-08-14

Similar Documents

Publication Publication Date Title
EP1061592A3 (fr) Elément magnétorésistif et son utilisation comme élément de mémoire
EP1391942A4 (fr) Element de magnetoresistance tunnel
MY123416A (en) Trilayer seed layer structure for spin valve sensor
SG115622A1 (en) Magnetoresistive device with exchange-coupled structure having half-metallic ferromagnetic heusler alloy in the pinned layer
WO2003034437A3 (fr) Ecrire a un element de ram magnetoresistante echelonnable
WO2002099451A3 (fr) Procede d'orientation d'un axe d'aimantation d'un premier element magnetique par rapport a un deuxieme element magnetique, produit semi-fini permettant d'obtenir un capteur, capteur de mesure d'un champ magnetique
WO2003019569A3 (fr) Composant electromagnetique
EP1345277A4 (fr) Dispositif magnetoresistant, tete magnetique et lecteur de disque magnetique
AU2001249381A1 (en) Magnetic element with an improved magnetoresistance ratio
EP1321943A3 (fr) Mémoire magnétique
EP1298669A3 (fr) Dispositif de mémoire magnétique
EP1310944A3 (fr) Transducteur à effet magnétorésistif géant
WO2005029497A3 (fr) Couche de passage a confinement de courant pour elements magnetiques utilisant un transfert de rotation et dispositif mram comprenant des elements magnetiques
EP1548762A3 (fr) Elément magnétorésistif, tête magnétique, appareil de reproduction magnétique et mémoire magnétique
EP0953849A3 (fr) Capteur magnétorésistif à effet tunnel de spin et procédé de fabrication
SG99922A1 (en) Giant magnetoresistive sensor with an ap-coupled low hk free layer
EP1126531A3 (fr) Dispositif à magnétorésistance et tête à effet de magnétorésistance, dispositif de mémoire et amplificateur utilisant ce dispositif
WO2005067472A3 (fr) Structures antiferromagnetiques synthetiques utilisees en technologie des jonctions tunnel magnetique dans des memoires vives magnetoresistives
CA2060561A1 (fr) Capteur magnetoresistif utilisant les oscillations dans une magnetoresistance
WO2003025942A3 (fr) Memoire magnetique a ecriture par courant polarise en spin, mettant en oeuvre des alliages amorphes ferrimagnetiques et procede pour son ecriture
EP1903624A3 (fr) Détecteur magnéto-résistant à tunnel dans lequel au moins une partie de la couche d'ancrage est composée d'une couche CoFeB et procédé de fabrication du détecteur magnéto-résistant à tunnel
WO2008050045A3 (fr) Dispositif magnetique a aimantation perpendiculaire et a couche intercalaire compensatrice d'interactions
EP1191344A3 (fr) Elément magnétorésistif et dispositif magnétorésistif l'utilisant
GB2387957B (en) CPP type magnetoresistive sensor including pinned magnetic layer provided with hard magnetic region
EP0814519A3 (fr) Elément à effet magnétorésistif, son procédé de fabrication et tête magnétique de cela

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT SE SI SK TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载