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WO2003065024A3 - Gmr-sensoranordnung und synthetischer anti-ferromagnet dafür - Google Patents

Gmr-sensoranordnung und synthetischer anti-ferromagnet dafür Download PDF

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Publication number
WO2003065024A3
WO2003065024A3 PCT/EP2003/000605 EP0300605W WO03065024A3 WO 2003065024 A3 WO2003065024 A3 WO 2003065024A3 EP 0300605 W EP0300605 W EP 0300605W WO 03065024 A3 WO03065024 A3 WO 03065024A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
ferromagnet
sensor assembly
synthetic anti
gmr sensor
Prior art date
Application number
PCT/EP2003/000605
Other languages
English (en)
French (fr)
Other versions
WO2003065024A2 (de
Inventor
Peter Gruenberg
Daniel Buergler
Rashid Gareev
Reinert Schreiber
Original Assignee
Forschungszentrum Juelich Gmbh
Peter Gruenberg
Daniel Buergler
Rashid Gareev
Reinert Schreiber
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich Gmbh, Peter Gruenberg, Daniel Buergler, Rashid Gareev, Reinert Schreiber filed Critical Forschungszentrum Juelich Gmbh
Publication of WO2003065024A2 publication Critical patent/WO2003065024A2/de
Publication of WO2003065024A3 publication Critical patent/WO2003065024A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)

Abstract

Die Erfindung beschreibt eine GMR-Sensoranordnung mit einer GMR-Schichtung (2), welche eine ferromagnetische Schicht mit leicht drehbarer Magnetisierungsausrichtung die free layer (3) -, eine ferromagnetische Schicht mit einer festen magnetischen Ausrichtung - die pinned layer (4) - und eine dazwischen liegende nicht magnetische Zwischenchicht (5) umfasst, wobei die pinned layer (4) gleichzeitig die erste ferromagnetische Schicht eines synthetischen Anti-Ferromagnets (6) bildet, der weiterhin eine zweite ferromagnetische Schicht (8) und eine dazwischen liegende Zwischenschicht (7) aufweist, welche dadurch gekennzeichnet ist, dass die Zwischenschicht (7) des synthetischen Anti-Ferromagnets (6) aus einem elektrisch isolierenden bzw. Hochohmigen Material besteht.
PCT/EP2003/000605 2002-01-28 2003-01-22 Gmr-sensoranordnung und synthetischer anti-ferromagnet dafür WO2003065024A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2002103466 DE10203466A1 (de) 2002-01-28 2002-01-28 GMR-Sensoranordnung und synthetischer Anti-Ferromagnet dafür
DE10203466.4 2002-01-28

Publications (2)

Publication Number Publication Date
WO2003065024A2 WO2003065024A2 (de) 2003-08-07
WO2003065024A3 true WO2003065024A3 (de) 2003-12-24

Family

ID=27588132

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2003/000605 WO2003065024A2 (de) 2002-01-28 2003-01-22 Gmr-sensoranordnung und synthetischer anti-ferromagnet dafür

Country Status (2)

Country Link
DE (1) DE10203466A1 (de)
WO (1) WO2003065024A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7367109B2 (en) 2005-01-31 2008-05-06 Hitachi Global Storage Technologies Netherlands B.V. Method of fabricating magnetic sensors with pinned layers with zero net magnetic moment
US7554775B2 (en) 2005-02-28 2009-06-30 Hitachi Global Storage Technologies Netherlands B.V. GMR sensors with strongly pinning and pinned layers
FR2932593B1 (fr) * 2008-06-13 2010-09-03 Parkeon Systeme et procede de verification de la validite d'un article de valeur, et horodateur comprenant un tel systeme

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5686838A (en) * 1992-12-21 1997-11-11 Siemens Aktiengesellschaft Magnetoresistive sensor having at least a layer system and a plurality of measuring contacts disposed thereon, and a method of producing the sensor
EP0971423A1 (de) * 1998-07-10 2000-01-12 Interuniversitair Micro-Elektronica Centrum Vzw Spin-Valve-Struktur und Herstellungsverfahren
WO2000017660A1 (de) * 1998-09-22 2000-03-30 Robert Bosch Gmbh Elektronisches bauelement
WO2000019226A1 (en) * 1998-09-28 2000-04-06 Seagate Technology Llc Quad-layer gmr sandwich
WO2000063714A1 (en) * 1999-04-20 2000-10-26 Seagate Technology Llc GIANT MAGNETORESISTIVE SENSOR WITH A CrMnPt PINNING LAYER AND A NiFeCr SEED LAYER
WO2001031357A1 (en) * 1999-10-28 2001-05-03 Seagate Technology Llc Spin-valve sensor
US6278592B1 (en) * 1999-08-17 2001-08-21 Seagate Technology Llc GMR spin valve having a bilayer TaN/NiFeCr seedlayer to improve GMR response and exchange pinning field
WO2001065269A1 (de) * 2000-03-02 2001-09-07 Forschungszentrum Jülich GmbH Magnetfeldmessanordnung mittels einer brückenschaltung von spin-tunnel-elementen und herstellungsverfahren
US6292336B1 (en) * 1999-09-30 2001-09-18 Headway Technologies, Inc. Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient
US6331773B1 (en) * 1999-04-16 2001-12-18 Storage Technology Corporation Pinned synthetic anti-ferromagnet with oxidation protection layer

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0971424A3 (de) * 1998-07-10 2004-08-25 Interuniversitair Microelektronica Centrum Vzw Spin-Valve Struktur und Herstellungsverfahren

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5686838A (en) * 1992-12-21 1997-11-11 Siemens Aktiengesellschaft Magnetoresistive sensor having at least a layer system and a plurality of measuring contacts disposed thereon, and a method of producing the sensor
EP0971423A1 (de) * 1998-07-10 2000-01-12 Interuniversitair Micro-Elektronica Centrum Vzw Spin-Valve-Struktur und Herstellungsverfahren
WO2000017660A1 (de) * 1998-09-22 2000-03-30 Robert Bosch Gmbh Elektronisches bauelement
WO2000019226A1 (en) * 1998-09-28 2000-04-06 Seagate Technology Llc Quad-layer gmr sandwich
US6331773B1 (en) * 1999-04-16 2001-12-18 Storage Technology Corporation Pinned synthetic anti-ferromagnet with oxidation protection layer
WO2000063714A1 (en) * 1999-04-20 2000-10-26 Seagate Technology Llc GIANT MAGNETORESISTIVE SENSOR WITH A CrMnPt PINNING LAYER AND A NiFeCr SEED LAYER
US6278592B1 (en) * 1999-08-17 2001-08-21 Seagate Technology Llc GMR spin valve having a bilayer TaN/NiFeCr seedlayer to improve GMR response and exchange pinning field
US6292336B1 (en) * 1999-09-30 2001-09-18 Headway Technologies, Inc. Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient
WO2001031357A1 (en) * 1999-10-28 2001-05-03 Seagate Technology Llc Spin-valve sensor
WO2001065269A1 (de) * 2000-03-02 2001-09-07 Forschungszentrum Jülich GmbH Magnetfeldmessanordnung mittels einer brückenschaltung von spin-tunnel-elementen und herstellungsverfahren

Also Published As

Publication number Publication date
WO2003065024A2 (de) 2003-08-07
DE10203466A1 (de) 2003-08-14

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