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WO2018236167A1 - Dispositif laser incluant un filtre, et procédé de fonctionnement associé - Google Patents

Dispositif laser incluant un filtre, et procédé de fonctionnement associé Download PDF

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Publication number
WO2018236167A1
WO2018236167A1 PCT/KR2018/007041 KR2018007041W WO2018236167A1 WO 2018236167 A1 WO2018236167 A1 WO 2018236167A1 KR 2018007041 W KR2018007041 W KR 2018007041W WO 2018236167 A1 WO2018236167 A1 WO 2018236167A1
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WIPO (PCT)
Prior art keywords
wavelength
temperature
selective filter
wavelength selective
laser
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PCT/KR2018/007041
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English (en)
Korean (ko)
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김정수
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김정수
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Publication of WO2018236167A1 publication Critical patent/WO2018236167A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0147—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on thermo-optic effects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon

Definitions

  • the present invention relates to a laser apparatus and a method of operating the same, and more particularly, to a laser apparatus capable of being fabricated in an extremely small size equipped with a wavelength stabilizing apparatus including a filter and capable of reducing the line width of laser light emitted from the package, And a method of operating the laser device.
  • DWDM Dense Wavelength Division Multiplexing
  • DWDM In order to expand the optical communication at a low cost, DWDM, which can use the existing optical fiber as it is, is preferably applied because the portion where the most cost is consumed in the optical communication is the optical fiber installation part.
  • DWDM DWDM with a frequency interval of 100 GHz is now subdivided into DWDM with a frequency interval of 50 GHz.
  • a very fine DWDM of 25 GHz it is preferable that each optical device generates a constant wavelength irrespective of changes in the external environmental temperature.
  • thermoelectric cooler which can control the temperature electrically, has the function of keeping the temperature of the device such as the laser diode chip constant.
  • the thermoelectric element merely controls the temperature of the element thermally coupled to the upper plate by measuring the temperature in the vicinity of the upper surface of the thermoelectric element, and can not substantially control the temperature of the semiconductor laser diode chip. Therefore, there is a problem that it is difficult to precisely control the temperature of the laser diode chip even if a thermoelectric element is used, when the temperature inside the optical element changes due to external temperature change. This causes a ripple change of the laser diode chip.
  • the stability of the wavelength of the laser diode is more important in DWDM where the wavelength interval is narrowed, that is, the frequency interval is narrowed.
  • the International Telecommunication Union Telecommunication Standardization Sector (ITU-T), which defines the communication standard, permits the following wavelength changes. At a frequency interval of 200 GHz, only a wavelength change of +/- 300 pm at the center wavelength specified by the standard, only a wavelength change of +/- 100 pm at the central wavelength defined by the standard at the 100 GHz frequency interval, Only wavelength variations of +/- 20 pm at the center wavelength are allowed.
  • FIG. 1 shows a TO-can type laser which realizes the characteristics of a laser capable of long-distance transmission at high speed as described in the above-mentioned invention.
  • the present invention proposes a method in which an optical element is mounted on a support such as a silicon or the like having a good heat conductivity and disposed on a 45-degree reflection mirror. It has been demonstrated that optical devices fabricated in this way can transmit more than 100Km at a high-speed transmission rate of 10Gbps.
  • the wavelength stabilization mentioned in the above-mentioned invention is only a relative wavelength stabilization of the wavelength of the optical filter and the laser diode having the characteristics of the etalon.
  • the temperature of the optical filter changes with the temperature of the external environment although the thermoelectric element is at a constant temperature.
  • the material of the optical filter including the etalon in the stand structure shown in FIG. 2 glass or quartz is used as the material having a small refractive index change depending on the temperature, and these materials have a very low thermal conductivity.
  • the temperature control of the TEC is the main purpose of temperature control of the TEC top plate, and the thermally contacted stand with the thermoelectric device controls the temperature of the etalon filter by transmitting heat.
  • the temperature of the external environment changes when the thermoelectric element is at a constant temperature
  • conduction by the thermal radiation 60 occurs from the cap 50 of the package.
  • the etalon filter is thermally balanced between the conduction from the cap 50 of the package and the heat transfer by the stand 10.
  • the temperature change of the etalon filter means that the temperature of the etalon filter changes by about 20 ° C, for example, when a change in the external environment temperature of 40 ° C occurs even when the thermoelectric element is maintained at a constant temperature . Even if the refractive index change rate is low depending on the temperature such as glass or Quartz, the temperature change of the etalon filter has a temperature change of about 12 pm per degree centigrade. Therefore, even if the thermoelectric element is maintained at a constant temperature, the etalon peak (wavelength of the etalon filter) itself shows a wavelength change of about 6.25 pm per 1 deg.
  • the laser oscillation wavelength should be adjusted to have a certain relative position with the etalon peak by changing the laser temperature.
  • the temperature change of the external environment at 40 ° C changes the transmission wavelength of the etalon peak by about 240 pm, so that the laser wavelength itself needs to be changed by about 240 pm to enable long distance transmission. Therefore, the conventional method can be applied only to DWDM with a wavelength interval of 200 GHz or more.
  • the present invention provides a low-cost TO type laser device that emits a laser beam having a small size and a small oscillation line width in order to solve the above problems. And to provide optical devices that can be applied to DWDM with a wavelength interval of 100 GHz and further with a wavelength of 50 GHz.
  • a laser device comprising: a laser diode chip for emitting laser light; An FP (Fabry-Perot) type etalon filter or a thin film filter; A heat sink having a good heat transfer coefficient to surround an outer circumferential surface of the wavelength selective filter; a collimating lens provided on an optical path between the laser diode chip and the wavelength selective filter for collimating light emitted from the laser diode chip; A 45-degree partial reflective mirror that deflects laser light traveling horizontally to a laser beam that travels perpendicular to the package's bottom surface; And a photodiode monitoring photodiode disposed on the optical path through which the laser beam reflected by the wavelength selective filter after being emitted from the laser diode chip passes through the 45 degree partial reflecting mirror.
  • FP Fabry-Perot
  • a heat sink having a good heat transfer coefficient to surround an outer circumferential surface of the wavelength selective filter
  • a collimating lens provided on an optical path between the laser diode chip and the wavelength
  • a photodiode for monitoring the light intensity may be further disposed on one side of the 45-degree partial reflection mirror and disposed on an optical path that is diverged from the laser diode chip and transmits the 45-degree partial reflection mirror.
  • the laser diode chip, the collimating lens, the wavelength selective filter, the 45-degree partial reflection mirror, and the photodiode for monitoring the wavelength are fixed on the thermoelectric element and disposed inside the TO (transistor outline) package.
  • the material having a high thermal conductivity to surround the wavelength selective filter is preferably a thermal conductive adhesive such as silver epoxy or silicone or AlN or a metal having high thermal conductivity, and is simultaneously in thermal contact with the wavelength selective filter and the stand.
  • the heat sink having a good thermal conductivity to surround the wavelength selective filter is protruded so that the wavelength selective filter is buried, and the size of the protrusion is preferably 200 ⁇ m or more.
  • the temperature of the thermoelectric element is reset to a temperature that cancels the change of the external environment temperature.
  • the wavelength of the laser light emitted from the laser diode chip is adjusted by adjusting the current passing through the semiconductor laser to adjust the wavelength of the laser irrespective of the thermoelectric element so that the transmission curve of the wavelength selective filter has a predetermined transmission / Lt; / RTI >
  • the reflectance of the 45-degree partial reflection mirror is preferably 80% to 98%.
  • the package housing in which the laser diode chip, the collimating lens, the wavelength selective filter, the 45-degree partial reflection mirror, the photodiode for optical intensity monitoring, the photodiode for optical wavelength monitoring and the thermoelectric element are disposed in which the laser diode chip, the collimating lens, the wavelength selective filter, the 45-degree partial reflection mirror, the photodiode for optical intensity monitoring, the photodiode for optical wavelength monitoring and the thermoelectric element are disposed, .
  • a wavelength selective filter such as an etalon filter is mounted inside the optical device package, Quot; signal and the " 0 " signal, the relative wavelengths of the wavelength selective filter and the laser wavelength can be adjusted so that the transmittance passing through the wavelength selective filter is different. Therefore, the optical device according to an embodiment of the present invention facilitates long-distance transmission in high-speed operation and suppresses the change in the laser oscillation wavelength as a result of temperature change of the wavelength selective filter due to a change in the external environmental temperature can do.
  • the optical device further includes a window glass covering a heat radiating plate, a protruding heat radiating plate and a protruding heat radiating plate outside the wavelength selective filter so that the entire wavelength selective filter can more easily exchange heat with the thermoelectric element.
  • the wavelength selective filter responds to the effect of ambient temperature at a minimum.
  • the laser wavelength changes to a minimum extent to the external environmental temperature change, allowing the optical device to be used for the denser DWDM methods such as 100 GHz and 50 GHz.
  • 1 shows a conventional TO-can type optical device for high-speed long distance transmission
  • Fig. 2 is a view of a stand on which a wavelength selective filter is mounted in a conventional TO-can optical device for high-speed long distance transmission
  • FIG. 3 is a view showing that a wavelength selective filter has a temperature different from that of a thermoelectric element by thermal radiation in a conventional TO-can type optical element for high-speed long distance transmission
  • FIG. 4 is a view showing a wavelength selective filter mounted on a stand in a conventional TO-can type optical device for high-speed long distance transmission exposed to thermal radiation from an optical device package
  • FIG. 5 is a schematic diagram showing a relationship between a wavelength selective filter and a laser wavelength when a wavelength selective filter is mounted so that a conventional direct modulation DFB-LD can be used for high-speed long-
  • FIG. 6 is a view of a wavelength selective filter in which a heat sink is paved around the wavelength selective filter according to the present invention
  • Fig. 7 is a view of a wavelength selective filter in which a heat sink is protruded around the wavelength selective filter according to the present invention
  • FIG. 8 is a view of a wavelength selective filter in which a window is mounted on a heat sink having a protruding shape around the wavelength selective filter according to the present invention
  • Fig. 9 is a graph showing the influence of the external environment temperature on the temperature of the wavelength selective filter in the structures of Figs. 4, 6, and 7 according to the present invention
  • FIG. 10 is a graph illustrating a change in the wavelength of the laser when the external environment temperature changes when the C-structure of FIG. 7 is used
  • Fig. 11 is a graph showing the relationship between the temperature of the thermoelectric element and the wavelength of the laser, in order to compensate for the fact that the change in the external environment temperature substantially changes the temperature of the wavelength selective filter.
  • FIG. 12 is a schematic diagram for stabilizing a wavelength using a monitoring photodiode
  • FIG. 13 is a flowchart of a method for stabilizing a wavelength using the present invention
  • FIG. 1 shows a TO-can type optical device having a wavelength selective filter having a transmission distance of 20 Km by directly modulating a DFB-LD at a 10 Gbps level in a conventional 1.55- ⁇ m long wavelength band.
  • FIG. 2 shows a stand in which a wavelength selective filter is mounted in a conventional TO-can type optical device having a wavelength selective filter for high-speed long-distance transmission.
  • a hole is formed in the stand 10, and a 45-degree partial reflecting mirror for dividing the laser beam is mounted in the hole.
  • the stand can usually be made of silicon with good thermal conductivity.
  • FIG. 3 is a graph showing the relationship between the wavelength of the radiation from the cap 50 forming the outer periphery of the TO-can type optical device in the TO-can type optical device having the wavelength selective filter for high-speed long- And the like.
  • the laser light proceeding to the wavelength selective filter passes through the center of the wavelength selective filter.
  • the wavelength selective filter typically has a very low thermal conductivity and has a refractive index different from that of a ceramic material such as glass or quartz Reflective layer is used coated.
  • the temperature of the central part of the wavelength selective filter becomes Otherwise, it may vary depending on the temperature change of the external environment.
  • FIG. 4 is a view showing in detail a process of heat transfer to a wavelength selective filter mounted on a stand by heat radiation.
  • FIG. 5 shows a case in which a DFB-LD is directly subjected to high- This is a graph showing that this is possible.
  • the optical signal emitted from the laser is composed of a "1" signal having a large signal intensity and a "0" signal having a weak signal intensity.
  • the chirp phenomenon of the optical transmission is a phenomenon in which the wavelength varies depending on the current density injected into the semiconductor laser. When the magnitude of the injection current of the "1" signal and the "0" signal largely changes, a large chirp characteristic occurs. chirp property occurs.
  • the "1" signal lies in a region with a relatively low transmittance.
  • the "1" signal is relatively much attenuated and the "0" signal is less attenuated, so the signal intensity difference between the "1" signal and the "0” signal is rather reduced. Therefore, when the wavelength of the signal from the laser is combined with the wavelength-selective filter in the form of B-CASE, the transmission characteristics are deteriorated. Accordingly, it is very important to adjust the wavelength of the laser light emitted from the laser to match the " 1 " signal to the maximum transmittance wavelength band of the wavelength selective filter.
  • the wavelength of the laser and the wavelength selective filter and the relative position are usually controlled by the temperature change of the thermoelectric element at a specific current condition. That is, the semiconductor laser has a wavelength change rate of about 90 pm / ° C., and the wavelength selective filter such as a glass typically shows a wavelength change rate according to a temperature of about 12 pm / ° C. Therefore, the wavelength of the laser should be adjusted so that the temperature of the thermoelectric element is adjusted so that the "1" signal is at the desired position of the wavelength selective filter. Since the wavelength selective filter does not change the wavelength depending on the temperature, the wavelength of the laser should be adjusted to a wavelength having a good transmission quality by changing the wavelength of the laser. However, when the transmission peak of the wavelength selective filter is far away from the predetermined channel, the wavelength of the laser light itself deviates far from the predetermined channel in order to improve the transmission characteristic.
  • the A-structure is the temperature at the center of the wavelength selective filter measured in the structure shown in FIG. 4, and the B-structure and the C-structure are the same as those of the heat sink 120 ) Is the temperature at the center of the wavelength selective filter in the padded structure.
  • the external temperature changes by 40 ° C in the A-structure
  • the temperature of the central part of the wavelength selective filter shows a temperature change of about 20 ° C even though the thermoelectric element is maintained at a constant temperature.
  • the temperature change of the wavelength selective filter at 20 ⁇ changes the transmission wavelength of the wavelength selective filter by about 240 pm and the wavelength of the laser light can be adjusted by adjusting the temperature of the thermoelectric device to the wavelength. That is, since the wavelength of the laser diode chip varies by about 90 pm / C, when the temperature of the thermoelectric element rises by about 2.5 ° C, the "1" signal can be placed in the appropriate region of the wavelength selective filter.
  • the transmission wavelength of the wavelength selective filter increases again by about 30 pm, which can be canceled by the increase of the temperature of the thermoelectric element by about 0.3 ° C.
  • the temperature of the thermoelectric element In FIG. 1, the two monitor photodiodes measure the reflectance of the wavelength selective filter to adjust the wavelength of the laser light in the appropriate region of the wavelength selective filter. In this process, the wavelength of the laser is determined by the transmission wavelength of the wavelength selective filter.
  • wavelength selective filter since the wavelength selective filter is sensitive to changes in the external environment temperature, it is difficult to apply it to wavelength DWDM having a wavelength interval of 100 GHz, further, 50 GHz.
  • the difference between the temperature of the wavelength selective filter 30 and the temperature of the thermoelectric element is significant because the characteristic of the wavelength selective filter 30 is poor in thermal conductivity, Because it affects the center of the image.
  • the present invention attaches a heat sink 120 having a good thermal conductivity around the wavelength selective filter 130 as shown in FIGS.
  • the heat sink 120 facilitates the heat exchange with the thermoelectric element even in a region remote from the stand 110, thereby making the temperature of the central portion of the wavelength selective filter closer to the temperature of the thermoelectric element.
  • Figure 7 is an embodiment of a B-structure.
  • At least one side of the stand 110 may include a wavelength selective filter 130 and the wavelength selective filter 130 may be coupled to the stand 110 in a cantilever fashion.
  • the wavelength selective filter 130 may be coupled to the stand 110 only on one side or may be coupled to the plurality of stands 110 on a plurality of sides.
  • the surface to which the wavelength selective filter 130 is bonded is preferably a side surface of the wavelength selective filter 130.
  • the shape to which the wavelength selective filter 130 is coupled can be coupled horizontally with the lower surface of the stand 110 (FIG. 7 is an embodiment combined horizontally) .
  • a side surface of the wavelength selective filter 130 that is not coupled to the stand 110 may be coupled to the heat sink 120.
  • the width of the heat sink 120 may be approximately equal to the thickness of the wavelength selective filter 130.
  • the heat sink 120 may be installed on the side surface of the wavelength selective filter 130, or on a portion of the top surface and the bottom surface through which light does not pass.
  • the width of the heat sink 120 is larger than the thickness of the wavelength selective filter 130 so that the heat sink 120 is out of the region of the wavelength selective filter and the upper surface of the wavelength selective filter 130 and / And may be formed in a protruding shape in a bottom direction.
  • the protruding heat sink 120 prevents the thermal radiation line, which is transmitted in a linear form, from reaching the wavelength selective filter 130 directly, thereby bringing the temperature of the wavelength selective filter 130 closer to the thermoelectric element.
  • the heat sink 120 may protrude more than 100 ⁇ m, preferably 200 to 500 ⁇ m, more than the thickness of the wavelength selective filter.
  • the heat sink 120 may further include a cover 140 that absorbs heat to the protruded heat sink of the thermoelectric element.
  • the cover portion 140 includes a feature that blocks heat radiation similarly to the protruding heat sink 120, and light passes therethrough.
  • the cover portion 140 may block the radiant heat 60 that can reach the wavelength selective filter so that the temperature of the wavelength selective filter is closer to the temperature of the thermoelectric element.
  • the cover portion 140 is coated with an anti-reflective coating on the surface through which the light passes.
  • the heat sink 120 attached to the wavelength selective filter 130 may be formed of a material having a good thermal conductivity. Such a material may be a metal material such as Cu, Al, or CuW, or a ceramic material such as AlN or Silicon have.
  • the heat sink 120 is coupled to the wavelength selective filter with a thermally conductive adhesive, and one of the heat sinks is preferably in thermal contact with the stand with an adhesive.
  • the wavelength selective filter 130 can be less affected by changes in the external environmental temperature. Accordingly, even if the external environmental temperature changes, the wavelength of the laser beam passing through the wavelength selective filter 130 is relatively stable as compared with the conventional one. This process is supported by the graph shown in FIG.
  • FIG. 10 is a graph showing a change in the wavelength of the laser as the external environment temperature changes when the C-structure of FIG. 8 is used.
  • Fig. 10 illustrates the structure of Fig. 8 (C-structure) as an example.
  • the temperature of the center of the wavelength selective filter shows a temperature rise of about 2 ° C. Therefore, it is assumed that the transmission wavelength band of the wavelength selective filter is set to the channel set by the ITU-T when the external environment temperature is 40 ° C, as indicated by the solid line in FIG. 10 (a).
  • the temperature of the wavelength selective filter rises by about 2 ° C.
  • the center wavelength of the wavelength selective filter is deviated by about 24 pm from the ITU-T setting channel as indicated by the dotted line in Fig. 10 (a).
  • the " 1 " signal of the laser light must shift to the transmission wavelength peak of the wavelength selective filter, and therefore, the thermoelectric element should be raised by about 0.3 DEG C as shown in FIG. This is because the wavelength of the laser deviates more than 20 pm from the channel set by the ITU-T, and this structure can be applied to 100 GHz DWDM, but it is difficult to apply to 50 GHz DWDM requiring a wavelength stability range of 20 pm or less.
  • Another embodiment of the present invention is to eliminate the dependence of the wavelength selective filter on the external environmental temperature, which is difficult to completely remove, so that the wavelength of the laser passing through the wavelength selective filter can always have a constant value.
  • Fig. 11 is a graph showing the relationship between the temperature of the thermoelectric element and the wavelength of the laser, in order to compensate for the fact that the change in the external environment temperature substantially changes the temperature of the wavelength selective filter. And the current is changed to a wavelength having a predetermined transmission band of the wavelength selective filter.
  • the solid line in FIG. 11 (a) shows a case where the transmission peak of the wavelength-selective filter matches the ITU-T channel at an external temperature of 40 ° C / TEC setting temperature of 40 ° C.
  • the dotted line in FIG. 11 (a) shows the transmission peak of the wavelength selective filter at an external temperature of 80 ° C / TEC setting temperature of 40 ° C.
  • the wavelength selective filter is affected by the external temperature and shows that the wavelength has already shifted.
  • the broken line in FIG. 11 (a) shows the transmission peak of the wavelength selective filter when the external temperature is 80 ° C / TEC setting temperature 38 ° C.
  • the transmission wavelength of the wavelength selective filter can be matched to the original ITU-T setting channel by adjusting the temperature of the thermoelectric device in such a way that the laser device compensates for the influence of the external temperature change on the wavelength selective filter
  • the solid line and the dashed line do not coincide with each other, but this is to make a dashed line appear.
  • the setting temperature of the thermoelectric element for canceling the change in the external temperature of the laser device can be predetermined and stored in the memory, and the TEC setting temperature can be appropriately set according to the external temperature.
  • the wavelength of the semiconductor laser can be varied by self-heating or the like.
  • a wavelength change of 10 to 20 pm / mA occurs.
  • a wavelength change of 15 pm / mA as an example, a wavelength change of 180 pm can be generated by injecting a current of about 12 mA into the laser diode chip. Since the heat generated by the current flowing through the laser is absorbed by the thermoelectric element and the thermoelectric element is at a constant temperature regardless of the current flowing through the laser diode chip, the transmission peak of the wavelength selective filter, which depends only on the temperature of the thermoelectric element, It becomes irrelevant to the current.
  • the wavelength oscillated in the laser diode chip can be matched to the appropriate region of the wavelength selective filter. Since the temperature of the thermoelectric device is reset by the method of canceling the influence of the external environmental temperature, the transmission wavelength of the wavelength selective filter can coincide with the channel set by ITU-T.
  • the laser oscillation wavelength is placed in the appropriate region of the wavelength selective filter by the current flowing to the laser diode chip, so that it can be applied to 50 GHz DWDM which does not deviate from the wavelength set by the external environment change while enabling high speed long distance transmission.
  • Optical devices can be made.
  • FIG. 12 is a diagram showing a configuration of a laser device for stabilizing the wavelength of the laser of the present invention.
  • the laser device may further include a thermoelectric element for controlling the temperature of the laser and the wavelength selective filter, and a further lens capable of collimating the laser light.
  • the laser apparatus includes a 45-degree partial reflection mirror 230 for dividing the laser light passing through the lens, a first monitoring photodiode 210 for monitoring the intensity of laser light on the optical path passing through the 45-degree partial reflection mirror, And the wavelength selective filter 130 may be disposed on the optical path reflected from the 45-degree partial reflection mirror.
  • the laser device further includes a second monitoring photodiode 220 for monitoring the intensity of the reflected light in the wavelength selective filter of the laser light on the optical path through which the light reflected by the wavelength selective filter passes through the 45- .
  • the wavelength selective filter is in contact with the upper plate of the thermoelectric element by a stand or the like having a high thermal conductivity by a stand or the like, but is spaced apart from the upper plate of the thermoelectric element and relatively close to the outer wall of the package I was on the street. Therefore, a considerable temperature difference can be generated between the temperature of the thermoelectric device upper plate and the wavelength selective filter, so that the temperature of the thermoelectric device is kept constant, and the temperature of the wavelength selective filter is constant . Therefore, the present invention has the characteristic of complementing the conventional laser device.
  • the present invention can be implemented by using a TO-can type package, and a stand having a 45-degree partial reflection mirror and a wavelength selective filter is made of a material having a high thermal conductivity such as Silicon .
  • the wavelength selective filter may be any one of an etalon filter having a high refractive index and a low refractive index on both surfaces of a ceramic material such as glass or quartz and a wavelength selective filter in the form of a single pass filter for forming a reflective film on one surface Can be implemented.
  • the first monitoring photodiode 210 monitors the output P (t) of the laser beam passing through the partial reflection mirror 230 having the transmittance A.
  • (1-A) P (t) the intensity of the laser beam reflected by the 45-degree partial reflection mirror 230 becomes (1-A) P ).
  • F (t) is a function of the wavelength change depending on the temperature of the wavelength selective filter 130. At this time, if the transmission wavelength is exactly matched, F (t) will be very small, and if the transmission wavelength is changed by external influence, F (t) will become large.
  • the reflected output is again received by the second monitoring photodiode 220 through the 45-degree partial reflecting mirror 230 and its output P2 is (1-A) A * P (t) F (t) do. Accordingly, the ratio (P1 / P2) of the output (any one of power, current, and voltage) of the first and second monitoring photodiodes becomes (1-A) F (t) Is only a function of the wavelength change with the temperature of the wavelength selective filter 130.
  • the present invention can confirm the correct value of the wavelength output using the ratio of the monitored power of the first and second monitoring photodiodes and can stabilize the wavelength using the ratio value.
  • the process of stabilizing the wavelength is as follows.
  • the laser apparatus monitors the temperature of the external environment and controls the temperature of the thermoelectric element corresponding to the external environment temperature to a predetermined temperature (predetermined temperature is applied to the memory value of the system in advance . Then, the laser device adjusts the oscillation wavelength of the laser by adjusting the amount of current applied to the laser so that the ratio of the output of the first and second monitoring photodiodes to a predetermined value is varied according to the temperature of the thermoelectric element.
  • the laser apparatus monitors the values of the outputs of the first and second monitoring photodiodes in real time or with a predetermined period, and adjusts the oscillation wavelength of the laser by adjusting the current applied to the laser.
  • the oscillation wavelength of the laser can be finely adjusted so that the optimum wavelength for the system performance can be obtained.
  • the current applied to the laser is applied to the first and second monitoring photodiodes
  • a method of adjusting the ratio of the flowing current (voltage, electric power) of the battery pack to a predetermined value can be used.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Semiconductor Lasers (AREA)

Abstract

La présente invention a trait à un dispositif laser incluant un filtre, et à un procédé de fonctionnement associé. Selon un aspect du présent mode de réalisation, la présente invention vise à pourvoir à un dispositif laser de type TO sous-miniature à faible coût qui émet une lumière laser ayant une largeur de ligne d'oscillation réduite, et à pourvoir à un élément optique qui conserve les caractéristiques d'un laser optimisé pour une transmission à grande distance et dans lequel la variation de longueur d'onde laser en fonction de variations de la température de l'environnement externe est réduite au minimum de sorte que l'élément optique puisse même être appliqué en DWDM où l'espacement de longueur d'onde est de 100 GHz ou même 50 GHz.
PCT/KR2018/007041 2017-06-22 2018-06-21 Dispositif laser incluant un filtre, et procédé de fonctionnement associé WO2018236167A1 (fr)

Applications Claiming Priority (2)

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KR10-2017-0078949 2017-06-22
KR1020170078949A KR20190000078A (ko) 2017-06-22 2017-06-22 필터를 포함하는 레이저 장치 및 그 운용방법

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KR20200084099A (ko) 2019-01-02 2020-07-10 삼성전자주식회사 뉴럴 네트워크 최적화 장치 및 뉴럴 네트워크 최적화 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001308444A (ja) * 2000-04-21 2001-11-02 Fujitsu Quantum Devices Ltd 光半導体装置
JP2003218446A (ja) * 2001-11-15 2003-07-31 Sumitomo Electric Ind Ltd 光モジュールおよび光学部品
JP2011090154A (ja) * 2009-10-22 2011-05-06 Nippon Telegr & Teleph Corp <Ntt> 波長ロッカー
KR20140117045A (ko) * 2013-03-26 2014-10-07 주식회사 포벨 소형 제작이 가능한 파장 가변 레이저 장치
KR20140144131A (ko) * 2013-06-10 2014-12-18 주식회사 포벨 파장 안정화 장치가 구비된 레이저 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001308444A (ja) * 2000-04-21 2001-11-02 Fujitsu Quantum Devices Ltd 光半導体装置
JP2003218446A (ja) * 2001-11-15 2003-07-31 Sumitomo Electric Ind Ltd 光モジュールおよび光学部品
JP2011090154A (ja) * 2009-10-22 2011-05-06 Nippon Telegr & Teleph Corp <Ntt> 波長ロッカー
KR20140117045A (ko) * 2013-03-26 2014-10-07 주식회사 포벨 소형 제작이 가능한 파장 가변 레이저 장치
KR20140144131A (ko) * 2013-06-10 2014-12-18 주식회사 포벨 파장 안정화 장치가 구비된 레이저 장치

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