WO2018196114A1 - 一种柔性有机发光二极管显示器及其制作方法 - Google Patents
一种柔性有机发光二极管显示器及其制作方法 Download PDFInfo
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- WO2018196114A1 WO2018196114A1 PCT/CN2017/087789 CN2017087789W WO2018196114A1 WO 2018196114 A1 WO2018196114 A1 WO 2018196114A1 CN 2017087789 W CN2017087789 W CN 2017087789W WO 2018196114 A1 WO2018196114 A1 WO 2018196114A1
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- layer
- light emitting
- emitting diode
- diode display
- organic light
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 50
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 34
- 239000004020 conductor Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000003960 organic solvent Substances 0.000 claims abstract description 7
- 238000000059 patterning Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 231
- 239000012044 organic layer Substances 0.000 claims description 53
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- 238000005538 encapsulation Methods 0.000 claims description 13
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 229910021389 graphene Inorganic materials 0.000 claims description 5
- DLINORNFHVEIFE-UHFFFAOYSA-N hydrogen peroxide;zinc Chemical compound [Zn].OO DLINORNFHVEIFE-UHFFFAOYSA-N 0.000 claims description 5
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
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- 230000005693 optoelectronics Effects 0.000 description 2
- 238000013086 organic photovoltaic Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
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- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
- H10K10/476—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure comprising at least one organic layer and at least one inorganic layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/865—Intermediate layers comprising a mixture of materials of the adjoining active layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to the field of display technologies, and in particular, to a flexible organic light emitting diode display and a method of fabricating the same.
- Flexible optoelectronics are widely used in next-generation displays, lighting, sensors or renewable energy sources, especially organic optoelectronic devices such as organic light-emitting diodes (OLEDs) and organic photovoltaic cells (OPVs).
- OLEDs organic light-emitting diodes
- OCVs organic photovoltaic cells
- Flexible smart electronic products such as flexible smartphones, foldable touch screens, and more.
- flexible organic light-emitting diodes flexible OLED shows great market potential.
- the pixel defining layer is easily separated from the OLED display layer during the bending or folding process, and leakage current is easily generated between the organic light emitting units.
- An object of the present invention is to provide a flexible organic light emitting diode display and a method of fabricating the same that can prevent leakage current between organic light emitting units.
- the present invention provides a method for fabricating a flexible organic light emitting diode display, which includes:
- the light emitting body layer comprising an anode, a hole transporting layer, a hole injecting layer and a light emitting layer;
- the conductor transport layer including an electron transport layer, an electron injection layer, and a cathode
- a first organic layer, a first inorganic layer, a second organic layer, and a second inorganic layer are sequentially formed on the conductor transport layer.
- the photoresist layer has a thickness ranging from 0.5 ⁇ m to 2 ⁇ m.
- the thickness range of the first organic layer and the thickness of the second organic layer are both in the range of 1 ⁇ m to 12 ⁇ m.
- the material of the first organic layer is a low temperature thermosetting compound or an ultraviolet curing compound.
- the thickness range of the first inorganic layer and the thickness of the second inorganic layer are both in the range of 0.5 ⁇ m -1 ⁇ m.
- the material of the first inorganic layer comprises zirconium aluminate, graphene, aluminum oxide, zirconium dioxide, zinc peroxide, silicon nitride, silicon carbon nitrogen, At least one of SiOx, titanium dioxide, and diamond-like carbon.
- the method further includes sequentially forming a third organic layer and a third inorganic layer on the second inorganic layer.
- the invention also provides a manufacturing method of a flexible organic light emitting diode display, comprising:
- the light emitting body layer comprising an anode, a hole transporting layer, a hole injecting layer and a light emitting layer;
- the conductor transport layer comprising an electron transport layer, an electron injection layer, and a cathode
- An encapsulation layer is formed on the conductor transport layer.
- the step of sequentially forming the active array layer and the photoresist layer on the flexible substrate comprises:
- An organic negative photoresist material is coated on the active array layer to obtain the photoresist layer.
- the photoresist layer has a thickness ranging from 0.5 ⁇ m to 2 ⁇ m.
- the step of forming an encapsulation layer on the conductor transport layer includes:
- a first organic layer, a first inorganic layer, a second organic layer, and a second inorganic layer are sequentially formed on the conductor transport layer.
- the thickness range of the first organic layer and the thickness of the second organic layer are both in the range of 1 ⁇ m to 12 ⁇ m.
- the material of the first organic layer is a low temperature thermosetting compound or an ultraviolet curing compound.
- the thickness range of the first inorganic layer and the thickness of the second inorganic layer are both in the range of 0.5 ⁇ m -1 ⁇ m.
- the material of the first inorganic layer comprises zirconium aluminate, graphene, aluminum oxide, zirconium dioxide, zinc peroxide, silicon nitride, silicon carbon nitrogen, At least one of SiOx, titanium dioxide, and diamond-like carbon.
- the method further includes:
- a third organic layer and a third inorganic layer are sequentially formed on the second inorganic layer.
- the present invention also provides a flexible organic light emitting diode display comprising:
- An active array layer on the flexible substrate is an active array layer on the flexible substrate
- An encapsulation layer is located on the conductor transport layer.
- the photoresist layer has a thickness ranging from 0.5 ⁇ m to 2 ⁇ m.
- the encapsulation layer includes a first organic layer, a first inorganic layer, a second organic layer, and a second inorganic layer.
- the encapsulation layer further includes a third organic layer and a third inorganic layer.
- the pixel defining layer is formed by using an organic substance to encapsulate the OLED display layer in the organic layer, thereby preventing separation of the OLED display layer from the pixel defining layer during bending or folding,
- the organic substance is used as a pixel defining layer to isolate the organic light emitting unit, and leakage current can be effectively prevented.
- FIG. 1 is a schematic diagram of a first step of a method of fabricating a flexible organic light emitting diode display of the present invention.
- FIG. 2 is a schematic diagram of a second step of a method of fabricating a flexible organic light emitting diode display of the present invention.
- FIG. 3 is a schematic diagram of a third step of a method of fabricating a flexible organic light emitting diode display of the present invention.
- FIG. 4 is a schematic diagram of a fourth step of a method of fabricating a flexible organic light emitting diode display of the present invention.
- FIG. 5 is a schematic diagram of the fifth step of the manufacturing method of the flexible organic light emitting diode display of the present invention.
- FIG. 6 is a schematic diagram of a sixth step of a method of fabricating a flexible organic light emitting diode display of the present invention.
- FIG. 7 is a schematic diagram of a seventh step of a method of fabricating a flexible organic light emitting diode display of the present invention.
- FIG. 8 is a schematic diagram showing the eighth step of the manufacturing method of the flexible organic light emitting diode display of the present invention.
- FIG. 9 is a schematic diagram of a ninth step of a method of fabricating a flexible organic light emitting diode display of the present invention.
- FIG. 10 is a schematic diagram of a tenth step of a method of fabricating a flexible organic light emitting diode display of the present invention.
- FIG. 11 is a schematic view showing the eleventh step of the manufacturing method of the flexible organic light emitting diode display of the present invention.
- FIG. 1 is a schematic diagram of a first step of a method for fabricating a flexible organic light emitting diode display of the present invention.
- the manufacturing method of the flexible organic light emitting diode display of the present invention comprises:
- the active array layer 12 and the photoresist layer 13 are sequentially formed on the flexible substrate substrate 11.
- the active array layer 12 has a plurality of thin film transistors including a gate, a source, and a drain.
- the active array layer 12 includes an active layer for forming a channel, a gate insulating layer, a first metal layer, an interlayer insulating layer, and a second metal layer.
- the step may include:
- S1011 Applying an organic negative photoresist material on the active array layer to obtain the photoresist layer.
- inkjet printing IJP spin-coating, slot coating (slot)
- slot coating slot coating
- screen printing is applied with an organic negative photoresist material on the active array layer 12 to obtain the photoresist layer 13.
- the photoresist layer 13 has a thickness ranging from 0.5 to 2 ⁇ m. Since the thickness is within this range, the formation of the organic light-emitting unit can be better defined.
- the photoresist layer 13 is exposed and developed in accordance with the size of the organic light emitting unit (the size of the R, G, and B pixels) to form a plurality of pixel defining units 131. That is, the photoresist layer 13 is used to form a pixel defining layer, and the pixel defining layer includes a plurality of pixel defining units 131.
- the pixel defining unit 131 is peeled off by a fluorine-based organic solvent, so that the deposited layer 141 located on the pixel defining unit 131 is also removed, leaving only the light-emitting body layer 142.
- an electron transport layer, an electron injection layer, and a cathode are sequentially deposited on the light-emitting body layer 142 by an evaporation process to form the conductor transport layer 15.
- the conductor transport layer 15 cooperates with the light-emitting body layer 142 to form a complete OLED display layer, wherein the OLED display layer includes a plurality of organic light-emitting units.
- the step may include:
- the first organic layer 16 serves to flatten the surface of the flexible organic light emitting diode display.
- the material of the organic layer 16 may be a low temperature thermosetting type or ultraviolet (UV) curing type compound, and the formed polymer may be any one of an acrylic series, a silane series, and an epoxy resin polymer.
- the thickness of the first organic layer 16 ranges from 1 to 12 ⁇ m. Since the thickness is within this range, the surface of the organic light emitting diode can be flattened without increasing the thickness of the display.
- ALD Atomic layer deposition
- PLD Pulsed Laser Deposition
- PECVD plasma enhanced chemical vapor deposition
- ALD Atomic layer deposition
- PLD Pulsed Laser Deposition
- PECVD plasma enhanced chemical vapor deposition
- One of the other methods deposits an inorganic material on the first organic layer 16 to obtain a first inorganic layer 17 for blocking external water oxygen.
- the material of the first inorganic layer 17 includes at least one of a metal oxide or a sulfide, a non-metal oxide, or a sulfide. Specifically, it may include ZrAlxOy (zirconium aluminate), graphene, alumina Al2O3, zirconium dioxide ZrO2, zinc peroxide ZnO2, silicon nitride SiNx, silicon carbonitride SiCN, SiOx, titanium dioxide TiO2, DLC (diamond like). At least one of them. Since these materials are insoluble in water, do not react with oxygen, and have high corrosion resistance, the first inorganic layer 17 has a good barrier property of water and oxygen, so that the organic light-emitting unit can be better prevented from being corroded.
- ZrAlxOy zirconium aluminate
- graphene graphene
- alumina Al2O3 zirconium dioxide ZrO2
- the first inorganic layer 17 has a thickness of 0.5 to 1 ⁇ m. Since the thickness is within this range, the external water oxygen can be better blocked without increasing the thickness of the display.
- IJP spin-coating, screen printing, and slot are reused.
- One of coating or the like is coated on the first inorganic layer 17 with a layer of organic material to obtain a second organic layer 18.
- the second organic layer 18 serves to relieve stress generated during bending.
- the thickness of the second organic layer 18 ranges from 1 to 12 ⁇ m. Since the thickness is within this range, the organic light emitting diode can be better protected without increasing the thickness of the display.
- an inorganic material is deposited on the second organic layer 18 by using one of PECVD, ALD, PLD, and Sputter, to obtain a second inorganic layer 19, which is also Used to block the outside water oxygen.
- the thickness or material of the second inorganic layer 19 may be the same as the thickness or material of the first inorganic layer 17.
- the above method may further include:
- the third organic layer 20 As shown in Figure 10, using IJP, spin-coating, screen printing, and slot One of coating or the like coats the organic material to obtain the third organic layer 20.
- the thickness range and material type of the third organic layer 20 may be the same as the thickness range and material of the first organic layer 16 or the second organic layer 18.
- an inorganic material is deposited on the third organic layer 20 by one of PECVD, ALD, PLD, and Sputter to obtain a third inorganic layer 21.
- the thickness range and material type of the third inorganic layer 21 may be the same as the thickness range and material type of the first inorganic layer 17 or the second inorganic layer 19.
- an organic layer and an inorganic layer are further disposed on the second inorganic layer, the ability to block external water oxygen can be further enhanced, and the organic light emitting diode can be better protected.
- the organic substance is used as the pixel defining layer to isolate the organic light emitting unit, not only the leakage current can be effectively prevented, but also the organic light emitting unit can be prevented from being deformed or peeled off during bending or folding.
- the use of inorganic and organic alternating package structure can improve the life of the component, thus achieving high-resolution RGB full color flexible OLED display technology.
- an embodiment of the present invention provides a flexible organic light emitting diode display including a flexible substrate 11, an active array layer 12, a light emitting body layer 142, a conductor transport layer 15, and an encapsulation layer 16-19.
- An active array layer 12 is disposed on the flexible substrate 11; a light emitting body layer 142 is disposed on the active array layer 12; a conductor transport layer 15 is disposed on the light emitting body layer 142; and an encapsulation layer 16-19 is located in the conductor transport layer 15 on.
- the pixel defining layer is formed by using an organic substance, thereby coating the OLED display layer in the organic layer, thereby preventing the OLED display layer from being separated from the pixel defining layer during the bending or folding process,
- the organic substance is used as a pixel defining layer to isolate the organic light emitting unit, and leakage current can be effectively prevented.
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Abstract
提供了一种柔性有机发光二极管显示器及其制作方法，包括：在柔性衬底（11）上依次形成主动阵列层（12）、光阻层（13）；对光阻层（13）进行图案化处理，形成多个像素定义单元（131）；在相邻两个像素定义单元（131）之间形成发光主体层（142）；采用有机溶剂将像素定义单元（131）剥离；在发光主体层（142）上形成导体传输层（15）；在导体传输层（15）上形成封装层（16、17、18、19、20、21）。
Description
本发明涉及显示器技术领域，特别是涉及一种柔性有机发光二极管显示器及其制作方法。
柔性光电器在下一代显示、照明、传感器或可再生能源等方面广泛地被应用，特别是有机光电器件，如有机发光二极管（OLED）和有机光伏电池（OPV）已经出现了各种可穿戴或柔性智能电子产品，比如可弯曲智能手机、可折叠的触摸屏等。尤其是可挠式有机发光二极体（flexible
OLED）显示出巨大的市场潜力。
但是现有的OLED在弯曲或折叠过程中像素定义层容易与OLED显示层发生分离，且有机发光单元之间容易产生漏电流。
因此，有必要提供一种柔性有机发光二极管显示器及其制作方法，以解决现有技术所存在的问题。
本发明的目的在于提供一种柔性有机发光二极管显示器及其制作方法，能够防止有机发光单元之间的漏电流。
为解决上述技术问题，本发明提供一种柔性有机发光二极管显示器的制作方法，其包括：
在柔性衬底上依次形成主动阵列层；
在所述主动阵列层上涂布有机负性光阻材料，以得到光阻层；
对所述光阻层进行图案化处理，以形成多个像素定义单元；
在相邻两个像素定义单元之间形成发光主体层，所述发光主体层包括阳极、空穴传输层、空穴注入层以及发光层；
采用有机溶剂将所述像素定义单元剥离；
在所述发光主体层上形成导体传输层，该导体传输层包括电子传输层、电子注入层以及阴极；以及
在所述导体传输层上依次形成第一有机层、第一无机层、第二有机层以及第二无机层。
在本发明的柔性有机发光二极管显示器的制作方法中，所述光阻层的厚度范围为0.5μm-2μm。
在本发明的柔性有机发光二极管显示器的制作方法中，所述第一有机层的厚度范围和所述第二有机层的厚度范围都为1μm -12μm。
在本发明的柔性有机发光二极管显示器的制作方法中，所述第一有机层的材料为低温热固化型化合物或紫外光固化型化合物。
在本发明的柔性有机发光二极管显示器的制作方法中，所述第一无机层的厚度范围和所述第二无机层的厚度范围都为0.5μm -1μm。
在本发明的柔性有机发光二极管显示器的制作方法中，所述第一无机层的材料包括锆铝酸盐、石墨烯、氧化铝、二氧化锆、过氧化锌、氮化硅、硅碳氮、SiOx、二氧化钛以及类金刚石中的至少一种。
在本发明的柔性有机发光二极管显示器的制作方法中，所述方法还包括：在所述第二无机层上依次形成第三有机层和第三无机层。
本发明还提供一种柔性有机发光二极管显示器的制作方法，其包括：
在柔性衬底上依次形成主动阵列层和光阻层；
对所述光阻层进行图案化处理，以形成多个像素定义单元；
在相邻两个像素定义单元之间形成发光主体层，所述发光主体层包括阳极、空穴传输层、空穴注入层以及发光层；
采用有机溶剂将所述像素定义单元剥离；
在所述发光主体层上形成导体传输层，该导体传输层包括电子传输层、电子注入层以及阴极；
在所述导体传输层上形成封装层。
在本发明的柔性有机发光二极管显示器的制作方法中，所述在柔性衬底上依次形成主动阵列层和光阻层的步骤包括：
在所述主动阵列层上涂布有机负性光阻材料，以得到所述光阻层。
在本发明的柔性有机发光二极管显示器的制作方法中，所述光阻层的厚度范围为0.5μm -2μm。
在本发明的柔性有机发光二极管显示器的制作方法中，所述在所述导体传输层上形成封装层的步骤包括：
在所述导体传输层上依次形成第一有机层、第一无机层、第二有机层以及第二无机层。
在本发明的柔性有机发光二极管显示器的制作方法中，所述第一有机层的厚度范围和所述第二有机层的厚度范围都为1μm -12μm。
在本发明的柔性有机发光二极管显示器的制作方法中，所述第一有机层的材料为低温热固化型化合物或紫外光固化型化合物。
在本发明的柔性有机发光二极管显示器的制作方法中，所述第一无机层的厚度范围和所述第二无机层的厚度范围都为0.5μm -1μm。
在本发明的柔性有机发光二极管显示器的制作方法中，所述第一无机层的材料包括锆铝酸盐、石墨烯、氧化铝、二氧化锆、过氧化锌、氮化硅、硅碳氮、SiOx、二氧化钛以及类金刚石中的至少一种。
在本发明的柔性有机发光二极管显示器的制作方法中，所述方法还包括：
在所述第二无机层上依次形成第三有机层和第三无机层。
本发明还提供一种柔性有机发光二极管显示器，其包括：
柔性衬底；
主动阵列层，位于所述柔性衬底上；
发光主体层，位于所述主动阵列层上；
导体传输层，位于所述发光主体层上；
封装层，位于所述导体传输层上。
在本发明的柔性有机发光二极管显示器中，所述光阻层的厚度范围为0.5μm-2μm。
在本发明的柔性有机发光二极管显示器中，所述封装层包括第一有机层、第一无机层、第二有机层以及第二无机层。
在本发明的柔性有机发光二极管显示器中，所述封装层还包括第三有机层和第三无机层。
本发明的柔性有机发光二极管显示器及其制作方法，利用有机物形成像素定义层，以将OLED显示层包覆在有机层中，从而防止OLED显示层在弯曲或折叠过程中与像素定义层的分离，另外将有机物作为像素定义层，以隔离有机发光单元，能够有效地防止漏电流。
图1为本发明的柔性有机发光二极管显示器的制作方法的第一步的示意图。
图2为本发明的柔性有机发光二极管显示器的制作方法的第二步的示意图。
图3为本发明的柔性有机发光二极管显示器的制作方法的第三步的示意图。
图4为本发明的柔性有机发光二极管显示器的制作方法的第四步的示意图。
图5为本发明的柔性有机发光二极管显示器的制作方法的第五步的示意图。
图6为本发明的种柔性有机发光二极管显示器的制作方法的第六步的示意图。
图7为本发明的柔性有机发光二极管显示器的制作方法的第七步的示意图。
图8为本发明的柔性有机发光二极管显示器的制作方法的第八步的示意图。
图9为本发明的柔性有机发光二极管显示器的制作方法的第九步的示意图。
图10为本发明的柔性有机发光二极管显示器的制作方法的第十步的示意图。
图11为本发明的柔性有机发光二极管显示器的制作方法的第十一步的示意图。
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
请参照图1-11，图1为本发明的柔性有机发光二极管显示器的制作方法的第一步的示意图。
本发明的柔性有机发光二极管显示器的制作方法，包括：
S101、在柔性衬底上依次形成主动阵列层和光阻层。
如图1所示，在柔性衬底基板11上依次形成主动阵列层12和光阻层13。该主动阵列层12具有多个薄膜晶体管，该薄膜薄膜晶体管包括栅极、源极和漏极。该主动阵列层12包括用于形成沟道的主动层、栅绝缘层、第一金属层、层间绝缘层、第二金属层。
具体地，该步骤可以包括：
S1011、在所述主动阵列层上涂布有机负性光阻材料，以得到所述光阻层。
例如，利用喷墨印刷IJP、旋转涂布（spin-coating）、狭缝式涂布（slot
coating）以及丝网印刷（screen printing）等方式中的一种在主动阵列层12上涂布一层有机负性光阻材料，以得到该光阻层13。
在一实施方式中，该光阻层13的厚度范围为0.5-2μm。由于厚度在此范围内，能更好地限定形成有机发光单元。
S102、对所述光阻层进行图案化处理，形成多个像素定义单元。
如图2所示，根据有机发光单元的尺寸（R、G、B像素的大小）对光阻层13进行曝光显影，形成多个像素定义单元131。也即该光阻层13用于形成像素定义层，该像素定义层包括多个像素定义单元131。
S103、在所述像素定义单元之间形成发光主体层，所述发光主体层包括阳极、空穴传输层、空穴注入层、发光层。
如图3所示，利用常用掩膜（common mask）和精细金属掩膜（Fine metal
mask）分别在像素定义单元131上依次沉积阳极、空穴传输层、空穴注入层以及发光层14（图中仅用单层结构表示），从而在像素定义层13上形成沉积层141以及在相邻两个像素定义单元131之间（也即R、G、B像素定义区）形成发光主体层142，该发光主体层142包括R、G以及B发光主体层。
S104、采用有机溶剂将所述像素定义单元剥离。
如图4所示，利用氟类有机溶剂将所述像素定义单元131剥离，使得位于该像素定义单元131上的沉积层141也被去除，只剩下发光主体层142。
S105、在所述发光主体层上形成导体传输层，该导体传输层包括电子传输层、电子注入层以及阴极。
如图5所示，利用蒸镀工艺依次在发光主体层142上沉积电子传输层、电子注入层以及阴极（图中仅用单层结构表示），以形成导体传输层15。该导体传输层15与该发光主体层142配合形成完整的OLED显示层，其中OLED显示层包括多个有机发光单元。
S106、在所述导体传输层上形成封装层。
具体地，该步骤可包括：
S1061、在所述导体传输层上形成第一有机层。
如图6所示，再次利用IJP、spin-coating、screen printing以及slot
coating中的一种方式在该导体传输层15上整面涂布一层有机材料，以得到第一有机层16。该第一有机层16用于使柔性有机发光二极管显示器的表面平整。该有机层16的材料可以是低温热固化型或紫外光（UV）固化型化合物，形成的聚合物可以是亚克力系列、硅烷系列以及环氧树脂聚合物中的任何一种。
该第一有机层16的厚度范围为1-12μm。由于厚度在此范围内，能使有机发光二极管的表面平整，且不会增加显示器的厚度。
S1062、在所述第一有机层上形成第一无机层。
如图7所示，利用原子层沉积（ALD，Atomic layer
deposition)、脉冲激光沉积（PLD，Pulsed Laser Deposition）、溅射以及等离子体增强化学气相沉积法( PECVD，Plasma
Enhanced Chemical Vapor Deposition
)等方式中的一种在第一有机层16上沉积一层无机材料，以得到第一无机层17，该第一无机层17用于阻隔外界的水氧。
该第一无机层17的材料包括金属氧化物或硫化物、非金属氧化物或硫化物中的至少一种。其具体可以包括ZrAlxOy（锆铝酸盐）、石墨烯、氧化铝Al2O3、二氧化锆ZrO2、过氧化锌ZnO2、氮化硅SiNx、硅碳氮SiCN、SiOx、二氧化钛TiO2、DLC(类金刚石)中的至少一种。由于这些材料不溶于水、且不与氧气发生反应、耐蚀性强，使得第一无机层17具有很好的阻隔的水氧的特性，因此可以更好地防止有机发光单元被腐蚀。
该第一无机层17的厚度在0.5-1μm。由于厚度在此范围内，能更好地阻隔外界的水氧，且不会增加显示器的厚度。
S1063、在所述第一无机层上形成第二有机层。
如图8所示，再次利用IJP、spin-coating、screen printing以及slot
coating等方式中的一种在该第一无机层17上整面涂布一层有机材料，以得到第二有机层18。该第二有机层18用于缓解弯曲时候产生的应力。
该第二有机层18的厚度范围为1-12μm，由于厚度在此范围内，能更好对有机发光二极管起到保护作用，且不会增加显示器的厚度。
S1064、在所述第二有机层上形成第二无机层。
如图9所示，再次利用PECVD、ALD、PLD以及Sputter等方式中的一种在该第二有机层18上沉积一层无机材料，以得到第二无机层19，该第二无机层19也用于阻隔外界的水氧。该第二无机层19的厚度或材料可以与该第一无机层17的厚度或材料相同。
优选地，上述方法还可以包括：
S107、在所述第二无机层上形成第三有机层。
如图10所示，利用IJP、spin-coating、screen printing以及slot
coating等方式中的一种涂布有机材料，以得到第三有机层20。该第三有机层20的厚度范围和材料类型可与第一有机层16或者第二有机层18厚度范围和材料相同。
S108、在所述第三有机层上形成第三无机层。
如图11所示，用PECVD、ALD、PLD以及Sputter等方式中的一种在第三有机层20上沉积一层无机材料，以得到第三无机层21。该第三无机层21的厚度范围和材料类型可与第一无机层17或者第二无机层19的厚度范围和材料类型相同。
由于在第二无机层上再设置一层有机层和无机层，能够进一步增强阻隔外界水氧的能力，更好地对有机发光二极管进行保护。
由于将有机物作为像素定义层，以隔离有机发光单元，不但能够有效地防止漏电流，而且能够很好防止有机发光单元在弯曲或折叠中产生变形或脱落。另外，采用无机有机交替的封装结构可以提高元件的寿命，从而实现高分辨率的RGB全彩化flexible
OLED显示技术。
如图9所示，本发明实施例提供一种柔性有机发光二极管显示器，其包括柔性衬底11、主动阵列层12、发光主体层142、导体传输层15以及封装层16-19。主动阵列层12位于所述柔性衬底11上；发光主体层142位于所述主动阵列层12上；导体传输层15位于所述发光主体层142上；封装层16-19位于所述导体传输层15上。
本发明的柔性有机发光二极管显示器及其制作方法，利用有机物形成像素定义层，从而将OLED显示层包覆在有机层中，进而防止OLED显示层在弯曲或折叠过程中与像素定义层的分离，另外将有机物作为像素定义层，以隔离有机发光单元，能够有效地防止漏电流。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。
Claims (20)
- 一种柔性有机发光二极管显示器的制作方法，其包括：在柔性衬底上依次形成主动阵列层；在所述主动阵列层上涂布有机负性光阻材料，以得到光阻层；对所述光阻层进行图案化处理，以形成多个像素定义单元；在相邻两个像素定义单元之间形成发光主体层，所述发光主体层包括阳极、空穴传输层、空穴注入层以及发光层；采用有机溶剂将所述像素定义单元剥离；在所述发光主体层上形成导体传输层，该导体传输层包括电子传输层、电子注入层以及阴极；以及在所述导体传输层上依次形成第一有机层、第一无机层、第二有机层以及第二无机层。
- 根据权利要求1所述的柔性有机发光二极管显示器的制作方法，其中所述光阻层的厚度范围为0.5μm-2μm。
- 根据权利要求1所述的柔性有机发光二极管显示器的制作方法，其中所述第一有机层的厚度范围和所述第二有机层的厚度范围都为1μm -12μm。
- 根据权利要求1所述的柔性有机发光二极管显示器的制作方法，其中所述第一有机层的材料为低温热固化型化合物或紫外光固化型化合物。
- 根据权利要求1所述的柔性有机发光二极管显示器的制作方法，其中所述第一无机层的厚度范围和所述第二无机层的厚度范围都为0.5μm -1μm。
- 根据权利要求1所述的柔性有机发光二极管显示器的制作方法，其中所述第一无机层的材料包括锆铝酸盐、石墨烯、氧化铝、二氧化锆、过氧化锌、氮化硅、硅碳氮、SiOx、二氧化钛以及类金刚石中的至少一种。
- 根据权利要求1所述的柔性有机发光二极管显示器的制作方法，其还包括：在所述第二无机层上依次形成第三有机层和第三无机层。
- 一种柔性有机发光二极管显示器的制作方法，其包括：在柔性衬底上依次形成主动阵列层和光阻层；对所述光阻层进行图案化处理，以形成多个像素定义单元；在相邻两个像素定义单元之间形成发光主体层，所述发光主体层包括阳极、空穴传输层、空穴注入层以及发光层；采用有机溶剂将所述像素定义单元剥离；在所述发光主体层上形成导体传输层，该导体传输层包括电子传输层、电子注入层以及阴极；以及在所述导体传输层上形成封装层。
- 根据权利要求8所述的柔性有机发光二极管显示器的制作方法，其中所述在柔性衬底上依次形成主动阵列层和光阻层的步骤包括：在所述主动阵列层上涂布有机负性光阻材料，以得到所述光阻层。
- 根据权利要求8所述的柔性有机发光二极管显示器的制作方法，其中所述光阻层的厚度范围为0.5μm-2μm。
- 根据权利要求8所述的柔性有机发光二极管显示器的制作方法，其中所述在所述导体传输层上形成封装层的步骤包括：在所述导体传输层上依次形成第一有机层、第一无机层、第二有机层以及第二无机层。
- 根据权利要求11所述的柔性有机发光二极管显示器的制作方法，其中所述第一有机层的厚度范围和所述第二有机层的厚度范围都为1μm -12μm。
- 根据权利要求11所述的柔性有机发光二极管显示器的制作方法，其中所述第一有机层的材料为低温热固化型化合物或紫外光固化型化合物。
- 根据权利要求11所述的柔性有机发光二极管显示器的制作方法，其中所述第一无机层的厚度范围和所述第二无机层的厚度范围都为0.5μm -1μm。
- 根据权利要求11所述的柔性有机发光二极管显示器的制作方法，其中所述第一无机层的材料包括锆铝酸盐、石墨烯、氧化铝、二氧化锆、过氧化锌、氮化硅、硅碳氮、SiOx、二氧化钛以及类金刚石中的至少一种。
- 根据权利要求11所述的柔性有机发光二极管显示器的制作方法，其还包括：在所述第二无机层上依次形成第三有机层和第三无机层。
- 一种柔性有机发光二极管显示器，其包括柔性衬底；主动阵列层，位于所述柔性衬底上；发光主体层，位于所述主动阵列层上；导体传输层，位于所述发光主体层上；以及封装层，位于所述导体传输层上。
- 根据权利要求17所述的柔性有机发光二极管显示器，其中所述光阻层的厚度范围为0.5μm-2μm。
- 根据权利要求17所述的柔性有机发光二极管显示器，其中所述封装层包括第一有机层、第一无机层、第二有机层以及第二无机层。
- 根据权利要求19所述的柔性有机发光二极管显示器，其中所述封装层还包括第三有机层和第三无机层。
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| CN107732031A (zh) * | 2017-09-29 | 2018-02-23 | 京东方科技集团股份有限公司 | 有机发光显示面板的制备方法及有机发光显示面板 |
| CN107863447B (zh) * | 2017-10-23 | 2019-10-11 | 武汉华星光电半导体显示技术有限公司 | 制备oled薄膜封装层的方法、oled薄膜封装结构及oled结构 |
| CN108198843B (zh) | 2017-12-29 | 2020-08-04 | 武汉华星光电半导体显示技术有限公司 | 显示面板制备方法 |
| CN109686862A (zh) * | 2019-01-10 | 2019-04-26 | 武汉华星光电半导体显示技术有限公司 | 显示面板 |
| CN111293232B (zh) * | 2020-02-24 | 2021-06-25 | 武汉华星光电半导体显示技术有限公司 | 柔性显示面板 |
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| US20200052230A1 (en) | 2020-02-13 |
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| CN107123751B (zh) | 2019-04-16 |
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