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WO2018193581A1 - Dispositif de conversion de puissance - Google Patents

Dispositif de conversion de puissance Download PDF

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Publication number
WO2018193581A1
WO2018193581A1 PCT/JP2017/015897 JP2017015897W WO2018193581A1 WO 2018193581 A1 WO2018193581 A1 WO 2018193581A1 JP 2017015897 W JP2017015897 W JP 2017015897W WO 2018193581 A1 WO2018193581 A1 WO 2018193581A1
Authority
WO
WIPO (PCT)
Prior art keywords
wiring member
mold resin
fuse portion
fuse
power conversion
Prior art date
Application number
PCT/JP2017/015897
Other languages
English (en)
Japanese (ja)
Inventor
雄二 白形
政紀 加藤
健太 藤井
武弘 齋藤
雅博 上野
友明 島野
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to JP2019513163A priority Critical patent/JP6797289B2/ja
Priority to PCT/JP2017/015897 priority patent/WO2018193581A1/fr
Publication of WO2018193581A1 publication Critical patent/WO2018193581A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a power converter, and more particularly to a power converter having a function of cutting off a short-circuit current when a component is short-circuited.
  • Such a vehicle has an inverter device for driving a motor.
  • the motor drive inverter device supplies high-voltage drive power to a motor drive circuit using a battery as a power source.
  • a resin-sealed power semiconductor device is used for an inverter device for driving a motor.
  • resin-encapsulated semiconductor devices are becoming increasingly important as key devices.
  • a power semiconductor element is resin-sealed together with other components.
  • a resin-encapsulated semiconductor device when power is supplied from a battery, a short circuit failure occurs in a power semiconductor element or a short circuit failure occurs in a snubber circuit electronic component such as a smoothing capacitor. Current flows. More specifically, for example, when the upper and lower arms of the inverter are short-circuited due to a malfunction of the gate drive circuit in the inverter control circuit, an overcurrent flows through the power semiconductor element, causing a short-circuit failure.
  • the resin-encapsulated semiconductor device emits smoke and fires due to a large current. Moreover, it is conceivable that the battery connected to the inverter device is damaged due to an overcurrent exceeding the rating. In order to avoid such a situation, usually, a sensor that detects an excessive current is used to control the switching element at a high speed when the excessive current flows to interrupt the current. However, in order to prevent failures such as smoke as described above more reliably, it is also beneficial to take further measures to cope with unexpected situations.
  • Patent Document 1 Conventional semiconductor devices provided with a fuse portion are described in, for example, Patent Document 1 and Patent Document 2.
  • the conventional semiconductor device described in Patent Document 1 includes a power lead connected to the main electrode of the power element.
  • the power element is sealed with a mold resin, and the power lead protrudes outward from the mold resin portion.
  • a fuse portion is provided at one location of the projecting power lead. At this time, if an overcurrent flows through the power lead, the temperature of the power lead rises and the fuse portion is broken. Thereby, an overcurrent is interrupted.
  • the conventional semiconductor device described in Patent Document 2 has a main circuit wiring having one end and the other end, joined to the surface of the semiconductor element on one end side, and having an external connection terminal portion on the other end side. It has.
  • the semiconductor element and one end of the main circuit wiring are sealed with a sealing resin.
  • the external connection terminal portion is exposed to the outside from the sealing resin.
  • the external connection terminal portion is attached to the bus bar so that a spring force acts on the main circuit wiring in a direction away from the surface of the semiconductor element.
  • the main circuit wiring is easily detached from the sealing resin and separated from the semiconductor element.
  • the conventional semiconductor device described in Patent Document 1 has the following problems.
  • the semiconductor device described in Patent Document 1 when the semiconductor device described in Patent Document 1 is mounted on a semiconductor module, power leads of the semiconductor device are soldered to bus bars of the semiconductor module. At this time, if an overcurrent flows through the power lead, the fuse portion provided in the power lead is torn. In this way, the overcurrent can be temporarily interrupted, but the torn fuse portion may be melted at a higher temperature and may be in electrical contact with a solder joint or the like. In that case, there existed a subject that the fuse part did not play the role as a fuse function. Further, in Patent Document 1, since the fuse portion is provided outside the semiconductor module, the mounting area of components is increased and the semiconductor device is enlarged.
  • the conventional semiconductor device described in Patent Document 2 has the following problems.
  • the sealing resin is broken by a spring force to separate the main circuit wiring from the semiconductor element. Therefore, since a member and a mounting area for securing the spring force are necessary, the semiconductor device is increased in size.
  • the joint since a force is constantly applied to the joint between the semiconductor element and the main circuit wiring due to the spring force, the joint may be damaged, and it is difficult to ensure long-term reliability.
  • the present invention has been made in order to solve such a problem, and it is possible to obtain a power conversion device that can cut off an overcurrent with a simple configuration when the overcurrent flows. It is aimed.
  • the present invention is a power conversion device including a power conversion module, wherein the power conversion module includes at least one lead frame provided in a wiring pattern, a semiconductor element provided on the lead frame, A wiring member that connects the lead frame and the semiconductor element; and a mold resin that seals the lead frame, the semiconductor element, and the wiring member.
  • the thickness of the mold resin provided on the upper side of the part is thinner than the thickness of the mold resin provided on the lower side of the fuse part.
  • the fuse portion is formed in the wiring member, and the thickness of the mold resin provided on the upper side of the fuse portion is reduced, so that when the overcurrent flows, the fuse portion is blown together with the broken fuse portion. Since the mold resin on the upper side of the part pops off, the overcurrent can be reliably interrupted with a simple configuration.
  • FIG. 2 is a cross-sectional view taken along the line AA in FIG.
  • FIG. 3 is a cross-sectional view taken along the line BB in FIG.
  • It is a top view of the fuse part provided in the power converter device which concerns on Embodiment 1 of this invention.
  • It is a schematic diagram of the current density of the fuse part provided in the power converter device according to Embodiment 1 of the present invention. It is the figure which showed the analysis result of the fuse part provided in the power converter device which concerns on Embodiment 1 of this invention.
  • It is the top view which showed the example of the shape of the fuse part provided in the power converter device which concerns on Embodiment 1 of this invention.
  • FIG. 1 is a front view of a power conversion apparatus according to Embodiment 1 of the present invention.
  • 2 and FIG. 3 are an AA cross-sectional view and a BB cross-sectional view of FIG. 1, respectively.
  • the power conversion apparatus includes a power conversion module 100, an external connection terminal 10, an insulating case 11, and a heat sink 12.
  • the power conversion module 100 includes a lead frame 13 formed in a wiring pattern, a switchable semiconductor element 14, a wiring member 15, a conductive bonding material 17, and a mold resin 20.
  • the wiring member 15 electrically connects between the terminals of the lead frame 13 and between the lead frame 13 and the semiconductor element 14.
  • the wiring member 15 includes a large current wiring member 15a and a control wiring member 15b. These wiring members 15a and 15b will be described later.
  • the conductive bonding material 17 bonds the lead frame 13, the semiconductor element 14, and the wiring member 15.
  • the mold resin 20 seals the lead frame 13, the semiconductor element 14, the wiring member 15, the conductive bonding material 17, and other mounting components (not shown).
  • the power conversion module 100 is provided with a heat sink 12 with an insulating material 18 interposed therebetween. Since the insulating material 18 is provided between the heat sink 12 and the semiconductor element 14, the semiconductor element 14 and the heat sink 12 are electrically insulated. On the other hand, the heat generated in the semiconductor element 14 is conducted to the heat sink 12 through the insulating material 18. Therefore, the semiconductor element 14 and the heat sink 12 are thermally connected. The heat sink 12 efficiently radiates heat generated in the semiconductor element 14 to the outside air.
  • the power conversion module 100 is electrically insulated from the heat sink 12 via the insulating material 18 and fixed in a thermally connected state.
  • the heat sink 12 may have an insulating layer on the surface facing the fixed portion of the power conversion module 100 and be fixed to the power conversion module 100 via soldering, heat dissipation grease, or the like.
  • the lead frame 13 is made of a metal such as copper or copper alloy having good conductivity and high thermal conductivity.
  • the control terminal 21 and the power terminal 22 of the power conversion module 100 protrude to the outside of the mold resin 20.
  • the control terminal 21 is a gate signal line and a sensor signal line of the semiconductor element 14.
  • the control terminal 21 is connected to a control board (not shown) mounted on the power converter.
  • the power terminal 22 is provided at the tip of the lead frame 13. A large current of several amperes to several hundred amperes flows through the power terminal 22.
  • the power terminal 22 is joined to the external connection terminal 10 inserted and outsert in the insulating case 11 by welding or soldering.
  • the power terminal 22 is connected to an external power supply device or a power source such as a battery via the external connection terminal 10.
  • the semiconductor element 14 is configured by a power field effect transistor (Power MOSFET: Power Metal-Oxide-Semiconductor Field-Effect Transistor) or an insulated gate bipolar transistor (IGBT: Insulated Gate Bipolar Transistor). These are used in inverter circuits that drive devices such as motors, and control a rated current of several amperes to several hundred amperes.
  • Power MOSFET Power Metal-Oxide-Semiconductor Field-Effect Transistor
  • IGBT Insulated Gate Bipolar Transistor
  • the conductive bonding material 17 is made of a material having good conductivity and high thermal conductivity, such as solder, silver paste, or conductive adhesive.
  • the conductive bonding material 17 is used for electrically and thermally connecting and fixing the semiconductor element 14, the lead frame 13, and the wiring member 15.
  • silicon (Si), silicon carbide (SiC), gallium nitride (GaN), or the like may be used as a material of the semiconductor element 14.
  • the insulating material 18 interposed between the lead frame 13 and the heat sink 12 is made of a material having high thermal conductivity and high electrical insulation. Therefore, the insulating material 18 is, for example, an adhesive made of a resin material such as a silicone resin, an epoxy resin, or a urethane resin having a thermal conductivity of 1 W / mK to several tens of W / mK and having an insulating property, grease, Or it is comprised with an insulation sheet. Furthermore, the insulating material 18 can be configured by combining other resin materials having low thermal resistance such as a ceramic substrate or a metal substrate and having an insulating property and those resin materials.
  • a resin material such as a silicone resin, an epoxy resin, or a urethane resin having a thermal conductivity of 1 W / mK to several tens of W / mK and having an insulating property, grease, Or it is comprised with an insulation sheet.
  • the insulating material 18 can be configured by combining other resin materials having low
  • a protrusion is provided on the lower surface side of the mold resin 20, that is, on the heat sink 12 side.
  • the thickness corresponding to the height of the protrusion can be defined, so that the insulating property of the insulating material 18 can be ensured.
  • a creepage distance required to ensure a predetermined withstand voltage is about 10 ⁇ m. Therefore, in the case of a low withstand voltage automobile, the thickness necessary for insulation can be reduced, so that the protrusion of the mold resin 20 can be further shortened, and the power conversion module 100 can be made thinner.
  • the heat sink 12 has a role of radiating heat generated in the semiconductor element 14 to the outside air when a current flows through the semiconductor element 14 sealed with the mold resin 20.
  • the heat sink 12 is configured using a material having a thermal conductivity of 90 W / m ⁇ K or more, such as aluminum or an aluminum alloy.
  • a plurality of fins 19 are arranged on the lower surface of the heat sink 12. These fins 19 are in contact with the outside air, and the heat sink 12 radiates heat from these fins 19 toward the outside air.
  • the wiring member 15 includes a large current wiring member 15a for large current and a control wiring member 15b for control.
  • the control wiring member 15 b is used, for example, to connect the gate and sensor unit of the semiconductor element 14 and the control terminal 21.
  • the control wiring member 15b can be formed by, for example, a wire bond such as gold, copper, or aluminum, or a ribbon bond of aluminum. However, it is not limited to these.
  • the large current wiring member 15 a is used for connecting between the terminals of the lead frame 13 or between the semiconductor element 14 and the power terminal 22 of the lead frame 13. As shown in FIG. 3, a fuse portion 16 is formed in the large current wiring member 15a.
  • the fuse portion 16 is provided in the energization path of the large current wiring member 15a.
  • the fuse portion 16 may be provided at any location as long as it is within the energization path of the large current wiring member 15a. However, the fuse portion 16 is not provided at the junction with the lead frame 13 and the junction with the semiconductor element 14 even in the energization path of the large current wiring member 15a.
  • the thickness of the joint portion of the large current wiring member 15a is thicker than the thickness of the fuse portion 16. However, the thickness is not limited to this case, and may be the same. Alternatively, the thickness of the junction portion of the large current wiring member 15 a may be made thinner than the thickness of the fuse portion 16.
  • the large current wiring member 15a is made of a metal having good conductivity such as copper, copper alloy, aluminum, and aluminum alloy.
  • the large current wiring member 15a can be formed, for example, by punching a metal plate having a thickness of about 0.1 mm to 2 mm.
  • the soldering of the joint portion is improved by plating the aluminum with tin or nickel.
  • the lower surface side of the fuse portion 16 of the large current wiring member 15a that is, the area on the semiconductor element 14 side
  • area R2 the upper surface side of the fuse portion 16
  • FIG. 4 is a top view of the high-current wiring member 15a.
  • the fuse portion 16 is formed by providing a notch portion 33 in the energization path excluding the joint portion of the large current wiring member 15a.
  • the notch 33 is configured by a round hole.
  • the fuse part 16 is formed by forming a round hole as the notch 33 in the metal plate constituting the large current wiring member 15a. Is done.
  • the fuse part 16 is comprised from a part of large current wiring member 15a. Accordingly, the fuse portion 16 is produced by being integrated with the high current wiring member 15a using the same material. Therefore, it is not necessary to add a new fuse member. Therefore, the number of parts is not added and the cost is not increased.
  • the cross-sectional area of the fuse portion 16 is smaller than the other portion of the large current wiring member 15a by the notch portion 33. Therefore, as indicated by the thick arrow C2 in FIG. 5, the current density is locally increased only in the fuse portion 16 as compared with the current C1 flowing in other portions. As a result, when a current flows through the large current wiring member 15a, the temperature of the fuse portion 16 only rises locally due to deterioration in heat dissipation and increase in heat generation density.
  • the temperature of the fuse part 16 rises rapidly in a short time.
  • the fuse portion 16 is broken by heat and flies away.
  • the fuse portion 16 blows away the mold resin 20 in the area R2 where the thickness of the mold resin 20 is thin to the upper surface side, and the fuse portion 16 bounces off the outside of the mold resin 20, whereby the large current wiring member 15a.
  • the fuse portion 16 can be separated from each other, thereby preventing the large current wiring member 15a and the fuse portion 16 from coming into contact with each other and energizing again.
  • the fuse portion 16 is likely to jump to the outside of the mold resin 20, the separation distance of the tearing portion of the high current wiring member 15 a can be increased, and the overcurrent flowing through the high current wiring member 15 a can be reliably cut off. it can.
  • the mold resin 20 has an area R2 on the upper surface side of the wiring member 15 thinner than the area R1 on the lower surface side. Therefore, when the fuse part 16 is torn, the mold resin 20 on the upper surface side together with the fuse part 16 is a power conversion module. Blow away toward the outside of 100. As in the conventional semiconductor device, if the fuse portion 16 is not blown away and remains in the power conversion module 100, the metal of the torn fuse portion 16 is melted by heat, and the lead frame 13 or The semiconductor element 14 is electrically connected, and as a result, the current flows again.
  • the mold resin 20 on the upper side of the fuse portion 16 is thinned, and the fuse portion 16 is blown off together with the mold resin 20 so that the current flows again due to the adhesion of the melted fuse portion 16. It can be prevented from flowing. Furthermore, in a low withstand voltage system using a 12V battery for automobiles, when a large current flows, the battery voltage drops to below 10V, so that no arc is generated when the fuse portion 16 is broken, and the structure can be further simplified. Further, the power conversion device can be further reduced in size and cost.
  • the cross-sectional area of the fuse portion 16 is reduced by making a round hole in the metal plate, but the cross-sectional area of the fuse portion 16 can also be reduced by locally reducing the thickness of the metal plate by pressing or the like. Needless to say, similar effects can be obtained. Further, the fuse portion 16 may be formed by combining the formation of the round hole and the reduction of the thickness.
  • FIG. 6 shows a temperature distribution when a current is passed through the large current wiring member 15a.
  • FIG. 6 is a temperature distribution of the large current wiring member 15a when an excessive current flows through the large current wiring member 15a shown in FIG. 4 and the fuse portion 16 reaches the melting point.
  • the fuse portion 16 As shown in FIG. 6, in the large current wiring member 15a, only the fuse portion 16 is locally heated, but at this time, there is a temperature gradient toward the joint at both ends of the large current wiring member 15a. I understand that. Therefore, even if the fuse part 16 is torn, the joint part is not destroyed. Further, by changing the size of the round hole constituting the notch 33, it is possible to adjust the current when the melting point is reached and the time until the melting point 16 is reached when the melting point is reached.
  • the fuse portion 16 is formed by providing the cutout portion 33 in the large current wiring member 15a used in the power conversion module 100 to locally reduce the cross-sectional area.
  • the fuse portion 16 since a part of the large current wiring member 15a is used as the fuse portion 16, it is not necessary to newly add a fuse member. Therefore, the number of parts is not added and the number of mounting steps is not increased, so that productivity is high. In addition, the power converter is not increased in size.
  • the thickness of the mold resin 20 is changed between the upper surface side and the lower surface side of the fuse portion 16 of the large current wiring member 15a, and the thickness of the mold resin 20 on the upper surface side is reduced.
  • the separation distance of the tearing portion of the high current wiring member 15a can be increased, so that the high current wiring member 15a can be prevented from conducting again, and the overcurrent can be reliably cut off. can do. As a result, smoke and ignition of the power converter can be prevented.
  • the fuse portion 16 the cross-sectional area of the high-current wiring member 15a is at least partially reduced and the rigidity is lowered. Therefore, thermal stress due to a temperature change is alleviated, and the reliability of the joint portion is expected to be improved. it can.
  • the shape of the notch 33 is a round hole, but other shapes may be used. That is, the shape of the notch 33 may be an ellipse as shown in the examples (a), (b), and (d) shown in FIG. 7, or a triangle as shown in the example (c) shown in FIG. Alternatively, as shown in the example (e) shown in FIG. 7, it may be a rectangle such as a rectangle or a square, or another polygon such as a pentagon and a hexagon. Furthermore, it may be trapezoidal as in example (i) shown in FIG. 7, or may be rhombus or parallelogram as in example (h) shown in FIG.
  • the number of notches 33 only one notch 33 is provided as in the examples (a) to (c), (e), (h), and (i) shown in FIG.
  • a plurality of notches 33 may be provided as in the examples (d), (f), and (g) shown in FIG.
  • the cutout portions 33 may be arranged in the width direction of the large current wiring member 15a as in the example (d) shown in FIG.
  • they may be arranged in the length direction, may be arranged alternately such as a staggered arrangement, or may be arranged irregularly.
  • the notch 33 is provided at the center position in the width direction of the large current wiring member 15a.
  • the present invention is not limited to this example.
  • the example (j), ( l), a notch 33 may be provided on one side in the width direction of the large current wiring member 15a, or a large current wiring as in the examples (k) and (m) shown in FIG.
  • the notches 33 may be provided on both sides in the width direction of the member 15a. In any case, since the cross-sectional area of the high-current wiring member 15a is reduced by the notch 33, the same effect can be obtained.
  • the shape of the cutout portion 33 is not limited to the examples (j) to (m) of FIG. 8, and is a quadrangle such as an ellipse, a rectangle, and a rectangle. Other polygons such as pentagons and hexagons, trapezoids, rhombuses, parallelograms, etc. may be used.
  • the number of the notches 33 may be one or plural. That is, the shape and the number of the notches 33 may be any shape and number that locally reduce the cross-sectional area in the high-current wiring member 15a, and are not limited to the shape and number described above.
  • FIG. 9 is a cross-sectional view of the power conversion device according to the second embodiment. 9, parts that are the same as or correspond to those in the configuration shown in FIG. 3 are given the same reference numerals, and descriptions thereof are omitted here.
  • the second embodiment is basically based on the idea described in the first embodiment.
  • the height of the large current wiring member 15a is compared with the height of the control wiring member 15b and other electronic components. Then, the height of the control wiring member 15b and other electronic components is higher than that of the large current wiring member 15a. Therefore, the mold resin 20 has a thickness corresponding to the height of the control wiring member 15b and other electronic components. As a result, there is a limit in reducing the thickness of the mold resin 20 provided on the upper side of the fuse portion 16, which is a design constraint for the fuse portion 16.
  • the recess 24 is provided on the upper surface of the mold resin 20 in the area R2 provided on the upper side of the fuse portion 16 of the high current wiring member 15a.
  • the position of the recessed portion 24 corresponds to the position of the fuse portion 16 so that it is just above the fuse portion 16. Thereby, the thickness of the mold resin 20 can be partially reduced, and the tall wiring member 15 and the electronic component can be used as they are.
  • the number of the recessed parts 24 may be one or plural.
  • the recess 24 may be formed at the same time when the power conversion module 100 is sealed with the mold resin 20 using a mold, or after the power conversion module 100 is sealed with the mold resin 20
  • the recess 24 may be formed by cutting out a part of the resin 20.
  • the power conversion module 100 can be configured by providing the recess 24 so that the mold resin 20 is thinned only on the upper side of the fuse portion 16.
  • the temperature of the fuse portion 16 rapidly increases in a short time. Then, when the temperature reaches the melting point of the metal constituting the fuse part 16, the fuse part 16 is torn and flies off. At that time, together with the fuse part 16, the mold resin 20 in the area R2 on the upper side of the fuse part 16 is also simultaneously blown off. In this way, the overcurrent can be surely interrupted by blowing away the fuse portion 16 and the mold resin 20 on the upper side to gain a separation distance.
  • the fuse part 16 blows off at the time of the rupture, the remains of the ruptured fuse part 16 do not remain in the power conversion module 100. If it remains, the metal of the torn fuse portion 16 is melted and electrically contacts the lead frame 13, the semiconductor element 14, the control wiring member 15 b, etc. May flow. However, in the second embodiment, since the fuse portion 16 does not remain, it is possible to reliably prevent the current from flowing again.
  • the mold resin 20 is present in the area R ⁇ b> 2 above the fuse portion 16.
  • the present invention is not limited to this, and as shown in FIG. 10, the depth of the recessed portion 24 is increased.
  • the fuse portion 16 may be exposed to the outside. That is, in FIG. 10, the recessed portion 24 is a through hole reaching the upper surface of the fuse portion 16, and the fuse portion 16 is exposed to the outside through the through hole. Therefore, the mold resin 20 is not provided above the fuse portion 16. In the example of FIG. 10, not only the fuse portion 16 part but also a part of the large current wiring member 15 a in the vicinity of the fuse portion 16 is exposed to the outside.
  • the recess 24 in FIG. 10 may be filled with a sealing material 26 having a low thermal conductivity and sealed.
  • the sealing material 26 is filled in the recess 24 of FIG. 10, but the sealing material 26 may be filled in the recess 24 of FIG. 9.
  • the sealing material 26 is made of a material having a thermal conductivity smaller than that of the mold resin 20. For example, if the thermal conductivity of the mold resin 20 is about 0.5 to several W / mK, the thermal conductivity of the sealing material 26 is preferably about 0.2 to 0.5 W / mK.
  • the sealing material 26 is made of, for example, a silicone resin having a thermal conductivity in such a range.
  • the heat dissipation of the fuse part 16 is deteriorated, and when an overcurrent flows through the fuse part 16, the temperature easily rises, and the fuse part 16. This has the effect of shortening the time until tearing. Furthermore, when the sealing material 26 is made of a silicone resin, an arc extinguishing action can be expected. Further, there is a silencing effect when the fuse portion 16 is broken.
  • a lid 25 may be provided on the upper surface of the mold resin 20.
  • the lid 25 is added to the configuration of FIG. 10, but the lid 25 may be added to the configuration of FIG. 9 or FIG.
  • air is shut off from the power conversion module 100, so that it is difficult for ignition or smoke to occur in the power conversion module 100.
  • a material of the lid 25 it is desirable to use a metal having a high melting point such as iron or ceramic.
  • the lid 25 is bonded to the mold resin 20 with an adhesive or the like. Note that the material of the lid 25 and the method of creating the gap are not limited to these.
  • the large current wiring member 15a has the fuse portion 16 and the thickness of the mold resin 20 on the upper side of the fuse portion 16 is the same as in the first embodiment.
  • the mold resin 20 on the upper side of the fuse portion 16 is blown off at the same time to increase the separation distance.
  • the debris of the fuse portion 16 contacts other parts. By doing so, it is possible to suppress conduction again, and it is possible to prevent smoke and ignition of the power converter.
  • the thickness of the mold resin 20 is further reduced by providing the recess 24 in the mold resin 20 on the upper side of the fuse portion 16. Therefore, regardless of the height of the control wiring member 15b and other electronic components, only the height of the mold resin 20 above the fuse portion 16 can be made thin independently. As a result, the choice of the shape of the fuse portion 16 is widened, and since a tall wiring member and electronic component can be used, the degree of design freedom can be increased. Further, since it is only necessary to provide the recess 24 in the mold resin 20, there is no additional number of parts and the number of mounting steps does not increase, so that productivity is high.
  • FIG. 13 is a cross-sectional view of the power conversion device according to the third embodiment.
  • the same or corresponding parts as those in the configuration shown in FIG. 3 are denoted by the same reference numerals, and the description thereof is omitted here.
  • the third embodiment basically assumes the idea described in the first embodiment.
  • the height of the control wiring member 15b and other electronic components is higher than the height of the large current wiring member 15a.
  • the height of the control wiring member 15b and other electronic components is configured to be lower than that of the large current wiring member 15a. Therefore, the thickness of the mold resin 20 of the fuse portion 16 can be reduced without providing the recessed portion 24 as in the second embodiment.
  • the fuse portion 16 breaks. Then, fly away. At that time, the overcurrent can be surely interrupted by blowing away the thin portion of the mold resin 20 on the upper side of the fuse portion 16 at the same time and increasing the separation distance.
  • the mold resin 20 is blown off at the same time when the fuse portion 16 is torn, the torn metal of the fuse portion 16 is electrically connected to the lead frame 13, the semiconductor element 14, or the control wiring member 15b, and again, It is possible to reliably prevent a current from flowing.
  • the thickness of the mold resin 20 is reduced as a whole, leading to miniaturization of the power converter.
  • the amount of the resin of the mold resin 20 is reduced, the thermal stress due to the temperature change is alleviated, and the reliability of the joint portion between the components can be improved.
  • the high-current wiring member 15a has the fuse portion 16 and the mold resin 20 on the upper side of the fuse portion 16 Since the thickness is reduced, it is possible to blow away the upper surface side at the time of the rupture to increase the separation distance, and to suppress the conduction of the fuse portion 16 again after the rupture, thereby preventing smoke and ignition of the power converter.
  • the thickness of the mold resin 20 is reduced as a whole, leading to the miniaturization of the power converter. Moreover, since the upper surface of the mold resin 20 can be flattened, the mold used for molding can be simplified.
  • the mold resin 20 is present on the upper side of the large current wiring member 15 a provided with the fuse portion 16.
  • the present invention is not limited to this, and as shown in FIG.
  • the large current wiring member 15a provided with 16 may be exposed to the outside.
  • the mold resin 20 is not provided on the upper side of the large current wiring member 15a. Note that only the fuse portion 16 may be exposed to the outside without exposing the entire large-current wiring member 15a.
  • the mold resin 20 on the upper side of the large current wiring member 15a and exposing at least a part of the large current wiring member 15a to the outside the heat dissipation of the fuse portion 16 deteriorates, and the fuse portion When an overcurrent flows through 16, the temperature is likely to rise, and there is an effect that it is possible to shorten the time until the fuse portion 16 breaks. Also in this case, since the upper surface of the mold resin 20 can be flattened, the mold used for molding can be simplified.
  • External connection terminal 11 Insulation case, 12 Heat sink, 13 Lead frame, 14 Semiconductor element, 15 Wiring member, 15a Wiring member for large current, 15b Wiring member for control, 16 Fuse part, 17 Conductive bonding material, 18 Insulating material , 19 fin, 20 mold resin, 21 control terminal, 22 power terminal, 24 dent, 25 lid, 26 sealing material, 100 power conversion module.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Inverter Devices (AREA)

Abstract

L'invention concerne un dispositif de conversion de puissance équipé d'un module de conversion de puissance 100. Le module de conversion de puissance 100 comprend une grille de connexion 13, un élément semi-conducteur 14 disposé au-dessus de la grille de connexion 13, un élément de câblage 15 établissant une connexion entre la grille de connexion 13 et l'élément semi-conducteur 14, et une résine moulée 20 scellant la grille de connexion 13, l'élément semi-conducteur 14 et l'élément de câblage 15. L'élément de câblage 15 comprend une section fusible 16, l'épaisseur de la résine moulée 20 sur le côté supérieur de la section fusible 16 étant plus mince que celle de la résine moulée 20 sur le côté inférieur de la section fusible 16.
PCT/JP2017/015897 2017-04-20 2017-04-20 Dispositif de conversion de puissance WO2018193581A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2019513163A JP6797289B2 (ja) 2017-04-20 2017-04-20 電力変換装置
PCT/JP2017/015897 WO2018193581A1 (fr) 2017-04-20 2017-04-20 Dispositif de conversion de puissance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2017/015897 WO2018193581A1 (fr) 2017-04-20 2017-04-20 Dispositif de conversion de puissance

Publications (1)

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WO2018193581A1 true WO2018193581A1 (fr) 2018-10-25

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WO (1) WO2018193581A1 (fr)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
JP2022108830A (ja) * 2021-01-14 2022-07-27 三菱電機株式会社 半導体装置

Families Citing this family (1)

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Publication number Priority date Publication date Assignee Title
KR102693501B1 (ko) * 2022-11-02 2024-08-09 (주)태원하이텍 합성수지 재질의 전기자동차용 전력분배장치 케이스

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JP2005175439A (ja) * 2003-11-20 2005-06-30 Toyota Motor Corp 半導体装置およびそれを備えた自動車
JP2008027993A (ja) * 2006-07-18 2008-02-07 Mitsubishi Electric Corp 電力用半導体装置
JP2008118010A (ja) * 2006-11-07 2008-05-22 Fuji Electric Device Technology Co Ltd 半導体装置
JP2008198661A (ja) * 2007-02-08 2008-08-28 Mitsubishi Electric Corp 半導体装置
JP2008235502A (ja) * 2007-03-20 2008-10-02 Mitsubishi Electric Corp 樹脂封止型半導体装置
JP2012204576A (ja) * 2011-03-25 2012-10-22 Aisin Aw Co Ltd 半導体装置
WO2013118275A1 (fr) * 2012-02-09 2013-08-15 三菱電機株式会社 Dispositif semiconducteur

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Publication number Priority date Publication date Assignee Title
JP2005175439A (ja) * 2003-11-20 2005-06-30 Toyota Motor Corp 半導体装置およびそれを備えた自動車
JP2008027993A (ja) * 2006-07-18 2008-02-07 Mitsubishi Electric Corp 電力用半導体装置
JP2008118010A (ja) * 2006-11-07 2008-05-22 Fuji Electric Device Technology Co Ltd 半導体装置
JP2008198661A (ja) * 2007-02-08 2008-08-28 Mitsubishi Electric Corp 半導体装置
JP2008235502A (ja) * 2007-03-20 2008-10-02 Mitsubishi Electric Corp 樹脂封止型半導体装置
JP2012204576A (ja) * 2011-03-25 2012-10-22 Aisin Aw Co Ltd 半導体装置
WO2013118275A1 (fr) * 2012-02-09 2013-08-15 三菱電機株式会社 Dispositif semiconducteur

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022108830A (ja) * 2021-01-14 2022-07-27 三菱電機株式会社 半導体装置
JP7444084B2 (ja) 2021-01-14 2024-03-06 三菱電機株式会社 半導体装置

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JP6797289B2 (ja) 2020-12-09

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