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WO2018173825A1 - Dispositif d'éclairage - Google Patents

Dispositif d'éclairage Download PDF

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Publication number
WO2018173825A1
WO2018173825A1 PCT/JP2018/009438 JP2018009438W WO2018173825A1 WO 2018173825 A1 WO2018173825 A1 WO 2018173825A1 JP 2018009438 W JP2018009438 W JP 2018009438W WO 2018173825 A1 WO2018173825 A1 WO 2018173825A1
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layer
light emitting
light
optical device
electrode
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PCT/JP2018/009438
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English (en)
Japanese (ja)
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北原　弘昭
崇人 小山田
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パイオニア株式会社
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Publication of WO2018173825A1 publication Critical patent/WO2018173825A1/fr

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  • the light-emitting device described in Patent Document 1 includes a substrate, a first electrode, an organic layer, and a plurality of second electrodes.
  • the first electrode and the organic layer are sequentially stacked on the substrate.
  • the plurality of second electrodes are, for example, aluminum films, and are arranged in stripes on the organic layer. Light from the outside of the OLED can pass through the region between the adjacent second electrodes. Thereby, OLED has translucency.
  • Patent Document 2 describes that a light-emitting device having translucency by making an opaque electrode a stripe is used for a stop lamp of a vehicle.
  • Patent Document 3 describes providing a resonator structure inside an organic EL element by providing a translucent reflective layer in an organic EL element having a transparent electrode, an organic layer, and a metal electrode.
  • JP 2013-149376 A Japanese Patent Laying-Open No. 2015-195173 JP 2006-147598 A
  • light-emitting devices having translucency have been developed.
  • such light emitting devices may be used in conjunction with devices (eg, photosensors or imaging devices) having light receiving elements (eg, photodiodes (PD)).
  • PD photodiodes
  • An example of a problem to be solved by the present invention is to suppress erroneous detection of a light receiving element due to light emitted from a light emitting device.
  • the invention according to claim 1 is a plurality of light emitting units having a transflective layer, a first electrode, an organic layer, and a second electrode; A light-transmitting part located between the two light-emitting parts and having the transflective layer and the optical layer; A light receiving element; With The number of layers positioned between the transflective layer of the light emitting unit and the second electrode is an optical device larger than the number of layers of the optical layer of the light transmitting unit.
  • the invention according to claim 2 is a light emitting unit having a transflective layer, a first electrode, an organic layer, and a second electrode; A translucent part located between the two light emitting parts and having the transflective layer; A light receiving element; With The first film thickness, which is the film thickness between the transflective layer and the second electrode in the light emitting part, is the film thickness of the optical layer where the translucent part is located on the transflective layer. The optical device is different from the second film thickness.
  • FIG. 3 is a diagram for explaining the optical device according to the first embodiment.
  • 6 is a diagram for explaining an optical device according to Embodiment 2.
  • FIG. 6 is a plan view of a light emitting device according to Embodiment 3.
  • FIG. 3 is a cross-sectional view taken along line AA in FIG. 2. It is the figure which expanded the area
  • FIG. 6 is a cross-sectional view illustrating a configuration of a light emitting device according to Modification 1 of Embodiment 3. 6 is a cross-sectional view illustrating a configuration of a light emitting device according to Modification Example 1.
  • FIG. It is a figure which shows an example of the emission spectrum of the 2nd surface side (light emission surface side). It is a figure which shows an example of the spectral reflectance of a translucent part.
  • FIG. 10 is a cross-sectional view illustrating a configuration of a light emitting device according to Modification 2 of Embodiment 3. It is a figure which shows an example of the spectral reflectance of a translucent part. It is a figure which shows an example of the spectral transmittance of a translucent part.
  • FIG. 10 is a cross-sectional view illustrating a configuration of a light emitting device according to Modification 3 of Embodiment 3. It is a figure which shows an example of the spectral reflectance of a translucent part. It is a figure which shows an example of the spectral transmittance of a translucent part.
  • the light emitting device 10 includes a substrate 100, a plurality of light emitting units 172, and a plurality of light transmitting units 174.
  • the substrate 100 has a first surface 100a and a second surface 100b.
  • the second surface 100b is on the opposite side of the first surface 100a.
  • the plurality of light emitting units 172 are located on the first surface 100 a side of the substrate 100.
  • Each of the plurality of light transmitting portions 174 is located between the adjacent light emitting portions 172.
  • the light emitting device 10 has translucency due to the plurality of translucent portions 174.
  • the light-emitting device 10 shown in FIG. 1 has the same configuration as the light-emitting device 10 described in detail later with reference to FIG.
  • light from the plurality of light emitting units 172 is mainly output from the second surface 100 b of the substrate 100.
  • the amount of light emitted from each light emitting unit 172 and leaking from the first surface 100a side of the substrate 100 is suppressed.
  • the second surface 100b of the substrate 100 when viewed from a direction parallel to the substrate 100. It may be located at a position that does not overlap the first surface 100a or the second surface 100b when viewed from the side and the direction perpendicular to the substrate 100.
  • the sensor device 40 performs optical sensing for acquiring information around the optical device 30.
  • the sensor device 40 includes a light emitting element 410 and a light receiving element 420.
  • the sensor device 40 may be a distance measuring sensor, particularly a LiDAR (Light Detection And Ranging).
  • the light emitting element 410 emits light toward the outside of the sensor device 40
  • the light receiving element 420 receives light emitted from the light emitting element 410 and reflected by the object.
  • the light emitting element 410 can be an element that can convert electrical energy into light energy, such as a laser diode (LD), and the light receiving element 420 can be an element that can convert light energy into electrical energy, such as It can be a photodiode (PD).
  • the sensor device 40 can detect the distance from the sensor device 40 to the object based on the time from when light is emitted from the light emitting element 410 to when it is received by the light receiving element 420.
  • the light receiving element 420 of the sensor device 40 detects light from outside the sensor device 40. Therefore, in order to prevent erroneous detection of the light receiving element 420, it is desirable to suppress the light emitted from the light emitting device 10 from entering the light receiving element 420 as much as possible.
  • the light device 30 can be used for light emitting and light sensing applications, for example, a tail lamp with a distance measuring sensor of an automobile.
  • the light emitting device 10 realizes a light emitting function
  • the sensor device 40 realizes a light sensing function.
  • erroneous detection of the light receiving element 420 due to light emitted from the light emitting device 10 can be suppressed.
  • the amount of light emitted from each light emitting unit 172 and leaking from the first surface 100a side of the substrate 100 is suppressed. Therefore, it can suppress that the light emitted from the light-emitting device 10 injects into the sensor apparatus 40 (light receiving element 420). Therefore, erroneous detection of the light receiving element 420 due to light emitted from the light emitting device 10 can be suppressed.
  • the sensor device 40 (light receiving element 420) is in front of or obliquely in front of the first surface 100a of the substrate 100, erroneous detection of the light receiving element 420 due to light emitted from the light emitting device 10 is suppressed. Can do.
  • the amount of light emitted from each light emitting unit 172 and leaking from the first surface 100a side of the substrate 100 is suppressed. Therefore, the leakage of light emitted from the light emitting device 10 to the front or obliquely front side of the first surface 100a of the substrate 100 can be suppressed.
  • the sensor device 20 (light receiving element 420) is in front of or obliquely in front of the first surface 100a of the substrate 100, erroneous detection of the light receiving element 420 due to light emitted from the light emitting device 10 can be suppressed.
  • FIG. 2 is a diagram for explaining the optical device 30 according to the second embodiment, and corresponds to FIG. 1 of the first embodiment.
  • the optical device 30 according to the present embodiment is the same as the optical device 30 according to the first embodiment except for the following points.
  • the sensor device 40 performs optical sensing for acquiring information around the optical device 30.
  • the sensor device 40 includes a plurality of light receiving elements 420.
  • the sensor device 40 can be an imaging sensor.
  • the plurality of light receiving elements 420 can be elements capable of converting an image into an electric signal, for example, a CCD (Charge Coupled Device) image sensor or a CMOS (Complementary Metal-Oxide-Semiconductor) image sensor.
  • each light receiving element 420 can be an element that can convert light energy into electrical energy, such as a photodiode (PD).
  • the sensor device 40 can detect an image of an object outside the sensor device 40 by using the plurality of light receiving elements 420.
  • the light receiving element 420 of the sensor device 40 detects light from outside the sensor device 40. Therefore, in order to prevent erroneous detection of the light receiving element 420, it is desirable to suppress the amount of light emitted from the light emitting device 10 and incident on the light receiving element 420 as much as possible.
  • the optical device 30 can be used for light emission and optical sensing, for example, a tail lamp with an image sensor of an automobile.
  • the light emitting device 10 realizes a light emitting function
  • the sensor device 40 realizes a light sensing function.
  • FIG. 3 is a plan view of the light emitting device 10 according to the third embodiment. 4 is a cross-sectional view taken along the line AA in FIG.
  • the light emitting device 10 according to the embodiment includes a plurality of light emitting units 172 and a light transmitting unit 174.
  • the light emitting unit 172 includes a transflective layer 140, a first electrode 110, an organic layer 120, and a second electrode 130.
  • the translucent part 174 includes a transflective layer 140 and an optical layer 180. The number of layers positioned between the transflective layer 140 and the second electrode 130 of the light emitting unit 172 is larger than the number of layers of the optical layer 180.
  • the film thickness (hereinafter referred to as the first film thickness) between the transflective layer 140 and the second electrode 130 of the light emitting unit 172 is the film thickness of the optical layer 180 (hereinafter referred to as the second film thickness). Is different.
  • the light emitting device 10 will be described in detail.
  • the light emitting device 10 includes a plurality of light emitting units 172.
  • Each of the plurality of light emitting units 172 extends linearly (for example, linearly).
  • the plurality of light emitting portions 172 extend in parallel to each other. However, at least a part of a certain light emitting unit 172 does not have to be parallel to the light emitting unit 172 located adjacent thereto.
  • the plurality of light emitting portions 172 are formed using the substrate 100.
  • the light emitting unit 172 is a bottom emission type, and emits light from the second surface 100 b of the substrate 100 to the outside.
  • the light emitting unit 172 may be a top emission type.
  • the substrate 100 is formed of a light-transmitting material such as glass or a light-transmitting resin.
  • the substrate is, for example, a polygon such as a rectangle.
  • the substrate 100 may have flexibility.
  • the thickness of the substrate 100 is, for example, not less than 10 ⁇ m and not more than 1000 ⁇ m.
  • the thickness of the substrate 100 is, for example, 200 ⁇ m or less.
  • the material of the substrate 100 is, for example, at least PEN (polyethylene naphthalate), PES (polyethersulfone), PET (polyethylene terephthalate), and polyimide.
  • PEN polyethylene naphthalate
  • PES polyethersulfone
  • PET polyethylene terephthalate
  • polyimide polyimide
  • an inorganic barrier layer such as SiN x or SiON is formed on at least the light emitting surface (preferably both surfaces) of the substrate 100 in order to suppress moisture from passing through the substrate 100. Is preferably formed.
  • the light emitting unit 172 is formed on the first surface 100a of the substrate 100, and includes the first electrode 110, the organic layer 120, and the second electrode 130 as described above.
  • the first electrode 110 is formed of a transparent conductive film.
  • This transparent conductive film is a metal-containing material, for example, a metal oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), IWZO (Indium Tungsten Zinc Oxide), or ZnO (Zinc Oxide).
  • the refractive index of the material of the transparent electrode is, for example, 1.5 or more and 2.2 or less.
  • the thickness of the transparent electrode is, for example, 10 nm or more and 500 nm or less.
  • the transparent electrode is formed using, for example, a sputtering method or a vapor deposition method.
  • the transparent electrode may be a carbon nanotube, a conductive organic material such as PEDOT / PSS, or a thin metal electrode.
  • the second electrode 130 has a metal layer, for example, and has light reflectivity.
  • the metal layer included in the second electrode 130 is, for example, a layer made of a metal selected from the first group consisting of Al, Au, Ag, Pt, Mg, Sn, Zn, and In, or the first group.
  • the second electrode 130 is formed using, for example, a vacuum evaporation method.
  • an insulating film 160 is formed on the first electrode 110.
  • the insulating film 160 covers the end of the first electrode 110, and has an opening 162 in a region of the first electrode 110 that should become the light emitting portion 172.
  • the insulating film 160 is formed by photolithography using a material in which a photosensitive substance is contained in polyimide or the like, for example.
  • the insulating film 160 is formed after the first electrode 110 is formed and before the organic layer 120 is formed.
  • the cross-sectional shape of the insulating film 160 becomes narrower as the distance from the first surface 100a of the substrate 100 increases.
  • An example of the cross-sectional shape of the insulating film 160 is a substantially trapezoid.
  • the two side surfaces (including the inner side surface 152) of the insulating film 160 are inclined in a direction facing the substrate 100.
  • the insulating film 160 may be a material other than the above, for example, an acrylic resin, an epoxy resin, PMMA (polymethyl methacrylate resin), a fluororesin, or a mixture or laminated film thereof.
  • the insulating film 160 may be an inorganic insulating film such as SiO 2 , SiN x , or SiON.
  • the light emitting device 10 includes a light shielding unit 102 and light transmitting units 104 and 106.
  • the light transmitting part 174 described above is an area where the light transmitting part 104 and the light transmitting part 106 are combined.
  • the light shielding portion 102 is a region overlapping the second electrode 130.
  • the light transmitting portion 104 is a region including the insulating film 160 among the regions between the plurality of light shielding portions 102.
  • the light transmitting portion 106 is a region that does not include the insulating film 160 among the regions between the plurality of light shielding portions 102.
  • the translucent portion 106 does not overlap with the first electrode 110.
  • the organic layer 120 is not formed on at least a part of the light transmitting portion 106.
  • the width of the light transmitting portion 104 is narrower than the width of the light transmitting portion 106. Further, the width of the light transmitting portion 106 may be wider or narrower than the width of the light shielding portion 102.
  • the width of the light shielding part 102 is 1, the width of the light transmitting part 104 is, for example, 0 or more (or more than 0) 0.2 or less, and the width of the light transmitting part 106 is, for example, 0.3 or more and 2 or less.
  • the light emitting device 10 has a plurality of light transmitting portions 174. For this reason, the light-emitting device 10 has translucency. Further, the light emitting unit 172 overlaps the light shielding unit 102. For this reason, most of the light emitted from the light emitting unit 172 is radiated to the outside from the surface of the substrate 100 where the light emitting unit 172 is not formed (second surface 100b).
  • the light emitting device 10 further includes a first terminal 112, a first wiring 114, a second terminal 132, and a second wiring 134.
  • the first terminal 112 and the second terminal 132 are terminals for connecting the light emitting unit 172 to an external drive circuit.
  • the first wiring 114 connects the first terminal 112 to the first electrode 110
  • the second wiring 134 connects the second wiring 134 to the second electrode 130.
  • the first terminal 112, the first wiring 114, the second terminal 132, and the second wiring 134 are all formed on the first surface 100 a of 100.
  • the light emitting device 10 may further include a sealing portion (not shown).
  • This sealing part may have a configuration in which, for example, an inorganic film is laminated, or may have a metal layer such as an aluminum foil and an adhesive layer, or an adhesive layer may be formed on the above laminated film. You may have the structure which attached metal foil via.
  • FIG. 5 is an enlarged view of the area surrounded by the dotted line ⁇ in FIG.
  • the film thickness ratio is different from that in FIG.
  • the organic layer 120 includes a first functional layer 121, a second functional layer 122, a light emitting layer 123, and a third functional layer 124 in this order from the first electrode 110 side.
  • the first functional layer 121 is, for example, a hole injection layer
  • the second functional layer 122 is, for example, a hole transport layer.
  • the light emitting layer 123 includes a light emitting material
  • the third functional layer 124 is, for example, an electron transport layer.
  • the layer configuration of the organic layer 120 in the light emitting unit 172 is not limited to the example shown in FIG.
  • the organic layer 120 may have an electron blocking layer between the second functional layer 122 and the light emitting layer 123, or a hole blocking layer between the light emitting layer 123 and the third functional layer 124. It may be.
  • the organic layer 120 is formed by using, for example, a vapor deposition method, but at least a part of the layer (for example, the first functional layer 121) may be formed by a coating method.
  • the material constituting the high refractive index layer 141 is preferably a dielectric such as TiO 2 , Nb 2 O 5 , or Ta 2 O 5 , but may be a transparent conductor such as ITO or IZO.
  • the low refractive index layer 142 is, for example, SiO 2 or MgF 2 , but may be other materials.
  • the surface of the semi-transmissive reflective layer 140 that faces the substrate 100 is the high refractive index layer 141, and the surface of the semi-transmissive reflective layer 140 that faces the first electrode 110 is the low refractive index layer 142.
  • the high refractive index layer 141 and the low refractive index layer 142 are formed using, for example, a sputtering method.
  • the transflective layer 140 is formed so as to reflect light of this wavelength when any wavelength (for example, peak wavelength) included in the emission spectrum of light emitted from the second surface 100b is ⁇ . .
  • both the high refractive index layer 141 and the low refractive index layer 142 have an optical film thickness of 0.9 times or more and 1.1 times or less of ⁇ / 4n.
  • the optical film thickness of the first electrode 110 is also 0.9 times to 1.1 times ⁇ / 4n.
  • the transflective layer 140 is located between the first electrode 110 and the substrate 100.
  • the layer between the transflective layer 140 and the light-reflective second electrode 130, specifically, the first electrode 110 and the organic layer 120 has a wavelength ⁇ .
  • a resonator structure 150 for light is configured.
  • L 2 satisfy the following equation. m ⁇ 0.8 ⁇ 2L / ⁇ + ⁇ / (2 ⁇ ) ⁇ m ⁇ 1.2 (1)
  • ⁇ is a phase shift (in radians) in reflection
  • m is 0 or a positive integer.
  • FIG. 6 is an enlarged view of a region surrounded by a dotted line ⁇ in FIG. However, the film thickness ratio is different from that in FIG.
  • the transflective layer 140 is also formed on the light transmitting part 174.
  • the transflective layer 140 located in the light emitting part 172 and the transflective layer 140 located in the translucent part 174 are continuous with each other to form one transflective layer 140.
  • a layer (optical layer 180) through which light passes is formed on the transflective layer 140.
  • the thickness (second film thickness) of the optical layer 180 is different from the thickness (first film thickness) of the layer located between the transflective layer 140 and the second electrode 130 in the light emitting unit 172.
  • the optical layer 180 is adjusted so that the optical film thickness satisfies the following formula (2). 0.9 ⁇ (2m ⁇ 1) / 4 ⁇ L1 ⁇ 1.1 ⁇ (2m ⁇ 1) / 4 (m is a positive integer) (2)
  • the optical layer 180 preferably includes at least one of the organic layers 120 and at least one of the first electrodes 110.
  • the first electrode 110 is not formed on the transflective layer 140 in the light transmitting portion 174, and a part of the organic layer 120 is not formed.
  • the optical layer 180 is composed of a part of the organic layer 120.
  • the optical layer 180 is formed.
  • the layer formed by the coating method can easily form a pattern as compared with the layer formed by the vapor deposition method. Therefore, preventing the first functional layer 121 from being formed in the light transmitting portion 174 (particularly the light transmitting portion 106) can cause the second functional layer 122, the light emitting layer 123, and the third functional layer 124 to be transparent. In particular, it can be easily performed as compared with the case where the light transmitting portion 106) is not formed.
  • at least one refractive index of the second functional layer 122, the light emitting layer 123, and the third functional layer 124 is larger than the refractive index of the low refractive index layer 142.
  • the layers common to the light emitting portion 172 and the light transmitting portion 174 are continuous.
  • the second functional layer 122, the light emitting layer 123, and the third functional layer 124 are continuous in the light emitting portion 172 and the light transmitting portion 174.
  • the first electrode 110 is formed on the substrate 100 using, for example, a vapor deposition method using a mask.
  • the insulating film 160 is formed using a photoresist method.
  • each layer of the organic layer 120 is formed.
  • the second electrode 130 is formed using, for example, an evaporation method using a mask. And a sealing part is provided.
  • the optical filter located in the light transmitting portion 174 functions as a filter that reflects at least a part (for example, 30% or more) of light having the wavelength ⁇ . Accordingly, it is possible to particularly reduce light leaking to the second surface 100b side in the light transmitting portion 174.
  • FIG. 7 is a diagram illustrating an example of an emission spectrum on the second surface 100 b side (light emitting surface side) of the light emitting device 10.
  • the substrate 100 is made of glass (refractive index 1.5).
  • the transflective layer 140 has two high refractive index layers 141 and two low refractive index layers 142.
  • the high refractive index layer 141 is Nb 2 O 5 (refractive index 2.3) having a thickness of 68 nm
  • the low refractive index layer 142 is SiO 2 (refractive index 1.5) having a thickness of 105 nm.
  • the electrode 110 is ITO (refractive index 1.9) having a thickness of 85 nm.
  • the first functional layer 121 of the organic layer 120 is a coating-type hole injection material (refractive index 1.7) having a thickness of 65 nm.
  • the second functional layer 122 is formed using a hole transporting material, and the third functional layer 124 is formed using an electron transporting material.
  • the peak wavelength of the emission spectrum of the light emitting layer 123 (that is, the peak wavelength of the emission spectrum of the light emitting device 10) is about 630 nm. For this reason, the optical film thicknesses of the high refractive index layer 141, the low refractive index layer 142, and the first electrode 110 are about ⁇ / 4.
  • the sum of the optical film thickness of the first electrode 110 and the optical film thickness of the organic layer 120 (refractive index 1.7 to 1.9) is 1.19 ⁇ , which satisfies the above formula (1).
  • the second electrode 130 is an Al film having a thickness of 90 nm.
  • the light emitting device 10 has a light emission intensity of the wavelength ⁇ approximately three times that of the light emitting device that does not have the transflective layer 140 (that is, does not have the resonator structure 150). It can be seen that the brightness is increased.
  • FIG. 8 shows an example of the spectral reflectance of the light transmitting part 174 of the light emitting device 10 having the same structure as FIG.
  • FIG. 9 shows an example of the spectral transmittance of the same light transmitting portion 174 as in FIG.
  • the optical layer 180 includes the second functional layer 122, the light emitting layer 123, and the third functional layer 124, and the optical film thickness is 0.76 ⁇ .
  • FIG. 8 shows that the light transmitting portion 174 has a high reflectance at the wavelength ⁇ (about 75% in the example shown in FIG. 8).
  • the transmissivity of the translucent part 174 is 50% or less, so the visible light transmittance is 50% or more. For this reason, the translucency of the translucent part 174 is sufficiently ensured.
  • FIG.10 and FIG.11 is sectional drawing which shows the structure of the light-emitting device 10 which concerns on the modification 1 of 3rd Embodiment.
  • FIG. 10 corresponds to FIG. 5 of the third embodiment
  • FIG. 11 corresponds to FIG. 6 of the third embodiment.
  • the light emitting device 10 according to the present modification is the light emitting device 10 according to the third embodiment, except that the transflective layer 140 has one high refractive index layer 141 and one low refractive index layer 142. It is the same composition as.
  • FIG. 12 is a diagram illustrating an example of an emission spectrum on the second surface 100b side (light emitting surface side) of the light emitting device 10 according to the present modification.
  • FIG. 13 shows an example of the spectral reflectance of the light transmitting part 174 of the light emitting device 10 according to this modification
  • FIG. 14 shows an example of the spectral transmittance of the light transmitting part 174.
  • the specific configuration of each layer of the light-emitting device 10 having these spectra is the same as that of the light-emitting device 10 used in FIGS.
  • the light emitting device 10 has a light emission intensity of wavelength ⁇ in light emission toward the second surface 100b.
  • the translucent portion 174 has a high reflectance (for example, 50% or more) at the wavelength ⁇ , and the translucent portion 174 has a sufficiently high visible light transmittance (for example, 70 higher than that of the embodiment). %more than).
  • FIG. 15 is a cross-sectional view illustrating a configuration of a light-emitting device 10 according to Modification 2 of the third embodiment, and corresponds to FIG. 6 of the third embodiment.
  • the organic layer 120 is not formed in the light transmitting portion 174, and the first electrode 110 is formed instead.
  • the optical layer 180 is the first electrode 110. Except for the point which is comprised, it is the structure similar to the light-emitting device 10 which concerns on 3rd Embodiment.
  • the light transmitting portion 174 has a high reflectance (for example, 74% or more) at the wavelength ⁇ , and the light transmitting portion.
  • the visible light transmittance of 174 is sufficiently secured (for example, 43% or more).
  • the transflective layer 140 has the resonator structure 150 and is not shown, the light emitting device 10 emits light with a wavelength ⁇ in the light emitted to the second surface 100b side.
  • FIG. 18 is a cross-sectional view showing a configuration of a light emitting device 10 according to Modification 3 of the third embodiment, and corresponds to FIG. 6 of the third embodiment.
  • the light emitting device 10 according to this modification has the same configuration as that of the light emitting device 10 according to modification 2, except that the high refractive index layer 141 and the low refractive index layer 142 are one layer each.
  • the translucent portion 174 has a wavelength ⁇ . It has a high reflectance (for example, 48% or more), and the visible light transmittance of the light transmitting portion 174 is sufficiently ensured (for example, 58% or more, which is higher than that of Modification 3).
  • the transflective layer 140 has the resonator structure 150 and is not shown, the light emitting device 10 emits light with a wavelength ⁇ in the light emitted to the second surface 100b side.
  • a plurality of light emitting units having a transflective layer, a first electrode, an organic layer, and a second electrode; A light-transmitting part located between the two light-emitting parts and having the transflective layer and the optical layer; With The light emitting device in which the number of layers positioned between the transflective layer of the light emitting unit and the second electrode is larger than the number of layers of the optical layer of the light transmitting unit. 2.
  • a light emitting unit having a transflective layer, a first electrode, an organic layer, and a second electrode; A translucent part located between the two light emitting parts and having the transflective layer; With The first film thickness, which is the film thickness between the transflective layer and the second electrode in the light emitting part, is the film thickness of the optical layer where the translucent part is located on the transflective layer. A light emitting device different from the second film thickness. 3. In the light-emitting device according to 1 or 2, Equipped with a translucent substrate, The transflective layer, the first electrode, the organic layer, the second electrode, and the optical layer are located on the substrate; The first electrode has a light-transmitting property, and the second electrode has a light-reflecting property. 4).
  • the transflective layer includes a high refractive index layer and a low refractive index layer having a lower refractive index than the high refractive index layer. 5).
  • the light-emitting device according to 4 or 5 The light-emitting device in which the transflective layer of the light-emitting portion and the transflective layer of the translucent portion are continuous. 7).
  • the organic layer has a plurality of layers, The light-emitting device, wherein the optical layer includes at least one of the organic layers and at least one of the first electrodes. 8).
  • the light emitting device according to the above 7 The light emitting device, wherein the optical layer includes a part of the organic layer. 9.
  • the organic layer includes a first functional layer, a second functional layer, a third functional layer, and a light emitting layer having a light emitting material, The light emitting device, wherein the optical layer includes the second functional layer, the third functional layer, and the light emitting layer. 10.
  • the light emitting device according to 9 above, The light emitting device in which the second functional layer, the third functional layer, and the light emitting layer are continuous with the light transmitting portion and the light emitting portion. 11. In the light-emitting device according to 9 or 10, A light emitting device in which the light emitting layer is located between the second functional layer and the third functional layer. 12 In the light emitting device according to any one of the above 9 to 11, The light emitting device, wherein the first functional layer is a coating layer containing a hole injection material. 13. In the light-emitting device according to any one of 9 to 12, The transflective layer is a light emitting device in which the high refractive index layer and the low refractive index layer are repeatedly positioned.
  • the light-emitting device in which the reflectance with respect to the peak wavelength of the radiation spectrum of the said light emission part in the said translucent part is 30% or more. 15. 15. The light emitting device according to 14 above, A light-emitting device that satisfies the following formula (1), where L 1 is the optical film thickness of the optical layer and ⁇ is any wavelength included in the emission spectrum of the light-emitting device. 0.9 ⁇ (2m ⁇ 1) / 4 ⁇ L 1 ⁇ 1.1 ⁇ (2m ⁇ 1) / 4 (m is a positive integer) (1) 16. 16.
  • the light emitting device When the optical thickness of the layer located between the second electrode and the semitransparent reflective layer has a L 2, A light emitting device satisfying the following formula (2). m ⁇ 0.8 ⁇ 2L / ⁇ + ⁇ / (2 ⁇ ) ⁇ m ⁇ 1.2 (2) Where ⁇ is a phase shift (in radians) in reflection, and n is 0 or a positive integer. 17. In the light emitting device according to 15 or 16, The light emitting device, wherein ⁇ is a peak wavelength of the emission spectrum.

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  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne un dispositif d'éclairage (30) pourvu d'un dispositif électroluminescent (10) et d'un dispositif capteur (20) (élément de réception de lumière (220)). Le dispositif électroluminescent (10) est pourvu d'une pluralité d'unités d'émission de lumière (172) et d'unités de transmission de lumière (174). Chaque unité d'émission de lumière (172) présente une structure stratifiée comprenant une première électrode (110), une couche organique (120) et une seconde électrode (130). Chaque unité de transmission de lumière (174) comprend une couche réfléchissante semi-transmissive (140) et une couche organique (120) qui sert de couche optique. Le nombre de couches interposées entre la couche réfléchissante semi-transmissive (140) et la seconde électrode (130) de chaque unité d'émission de lumière (172) est supérieur au nombre de couches contenues dans la couche organique (120) qui sert de couche optique. De plus, l'épaisseur de film de la couche réfléchissante semi-transmissive (140) à la seconde électrode (130) de chaque unité d'émission de lumière (172) est différente de l'épaisseur de film de la couche organique (120) qui sert de couche optique.
PCT/JP2018/009438 2017-03-21 2018-03-12 Dispositif d'éclairage WO2018173825A1 (fr)

Applications Claiming Priority (2)

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JP2017054484 2017-03-21
JP2017-054484 2017-03-21

Publications (1)

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WO2018173825A1 true WO2018173825A1 (fr) 2018-09-27

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WO (1) WO2018173825A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014071800A (ja) * 2012-10-01 2014-04-21 Seiko Epson Corp 撮像装置および医療機器
JP2015038859A (ja) * 2013-07-17 2015-02-26 セイコーエプソン株式会社 発光装置、発光装置の製造方法、受発光装置、電子機器
JP2015233001A (ja) * 2014-05-15 2015-12-24 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器、及び照明装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014071800A (ja) * 2012-10-01 2014-04-21 Seiko Epson Corp 撮像装置および医療機器
JP2015038859A (ja) * 2013-07-17 2015-02-26 セイコーエプソン株式会社 発光装置、発光装置の製造方法、受発光装置、電子機器
JP2015233001A (ja) * 2014-05-15 2015-12-24 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器、及び照明装置

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