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WO2018173344A1 - Dispositif d'exposition, dispositif de traitement de substrats, procédé d'exposition de substrats, et procédé de traitement de substrats - Google Patents

Dispositif d'exposition, dispositif de traitement de substrats, procédé d'exposition de substrats, et procédé de traitement de substrats Download PDF

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Publication number
WO2018173344A1
WO2018173344A1 PCT/JP2017/037053 JP2017037053W WO2018173344A1 WO 2018173344 A1 WO2018173344 A1 WO 2018173344A1 JP 2017037053 W JP2017037053 W JP 2017037053W WO 2018173344 A1 WO2018173344 A1 WO 2018173344A1
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WO
WIPO (PCT)
Prior art keywords
substrate
ejection
unit
inert gas
window member
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Application number
PCT/JP2017/037053
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English (en)
Japanese (ja)
Inventor
靖博 福本
孝文 大木
友宏 松尾
正也 浅井
将彦 春本
田中　裕二
知佐世 中山
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
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Publication of WO2018173344A1 publication Critical patent/WO2018173344A1/fr

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  • the present invention relates to an exposure apparatus that performs exposure processing on a substrate, a substrate processing apparatus, a substrate exposure method, and a substrate processing method.
  • Patent Document 1 describes an exposure apparatus that performs an exposure process on a film (DSA film) containing an induced self-assembled material on a substrate.
  • the exposure apparatus has a light emitting part capable of emitting a vacuum ultraviolet ray having a cross-sectional band shape, and is configured to be movable from the front position to the rear position of the light emitting part so that the substrate crosses the path of the vacuum ultraviolet ray from the light emitting part.
  • the illuminance of vacuum ultraviolet rays is detected in advance by an illuminance sensor, and the moving speed of the substrate is calculated based on the detected illuminance so that a desired amount of vacuum ultraviolet rays is irradiated.
  • the DSA film on the substrate is irradiated with a desired amount of vacuum ultraviolet light by moving the substrate at the calculated moving speed.
  • the illuminance of the vacuum ultraviolet rays applied to the substrate may decrease. In this case, the accuracy of the exposure process decreases. In addition, since the time required for the exposure process is prolonged, the efficiency of the exposure process is lowered.
  • An object of the present invention is to provide an exposure apparatus, a substrate processing apparatus, an exposure method, and a substrate processing method capable of maintaining the accuracy and efficiency of exposure processing.
  • An exposure apparatus has an opening, a processing chamber that houses a substrate, a translucent window member attached to the opening of the processing chamber, and a substrate in the processing chamber through the window member.
  • the light source part which irradiates a vacuum ultraviolet-ray, and the airflow formation part which forms the flow of the inert gas along one surface of a window member are provided.
  • vacuum ultraviolet rays are radiated to the substrate housed in the processing chamber by the light source section through a translucent window member attached to the opening of the processing chamber. Moreover, the flow of the inert gas along one surface of the window member is formed by the airflow forming portion.
  • the inert gas hardly absorbs the vacuum ultraviolet rays applied to the substrate. Therefore, it is possible to prevent the temperature of the window member from rising without reducing the exposure efficiency of the substrate. Thereby, it can prevent that the illumination intensity of the vacuum ultraviolet-ray which permeate
  • One surface of the window member may face the internal space of the processing chamber, and the airflow forming unit may form an inert gas flow along the one surface of the window member in the processing chamber.
  • the airflow forming unit may form an inert gas flow along the one surface of the window member in the processing chamber.
  • the airflow forming unit may include an ejection unit that ejects an inert gas along one surface of the window member into the processing chamber, and an exhaust unit that exhausts the inert gas within the processing chamber.
  • an ejection unit that ejects an inert gas along one surface of the window member into the processing chamber
  • an exhaust unit that exhausts the inert gas within the processing chamber.
  • the ejection part may include an ejection pipe extending in parallel with one surface of the window member and having an ejection port for ejecting an inert gas. In this case, the flow of the inert gas along the entire surface of the window member can be easily formed.
  • the ejection part further includes a holding member provided so as to surround the outer periphery of the ejection pipe, and the holding member has a first slit extending in parallel with one surface of the window member, and ejects from the ejection port of the ejection pipe
  • the inert gas to be discharged may be ejected along one surface of the window member through the first slit of the holding member.
  • the ejection pipe extending parallel to one surface of the window member can be easily held without hindering the flow of the inert gas.
  • the ejection pipe may have a plurality of ejection holes arranged in parallel to one surface of the window member as an ejection outlet and ejecting an inert gas.
  • the ejection pipe can eject an inert gas having a strip-shaped cross section extending in parallel to one surface of the window member from the plurality of ejection holes.
  • the ejection pipe may have a second slit that extends parallel to one surface of the window member and ejects an inert gas as an ejection outlet.
  • the ejection pipe can eject an inert gas having a cross-sectional strip shape extending in parallel with one surface of the window member.
  • the ejection part and the exhaust part may be arranged to face each other across a space in contact with one surface of the window member.
  • the inert gas ejected from the ejection portion passes through the entire window member along one surface of the window member, and is then discharged by the exhaust portion. Thereby, the flow of the inert gas along the whole one surface of the window member can be formed easily and efficiently.
  • the ejection part includes first and second ejection parts arranged to face each other across a space in contact with one surface of the window member, and the exhaust part overlaps the first and second ejection parts. You may arrange
  • the airflow forming unit may form a laminar flow of inert gas along one surface of the window member.
  • heat generated in the window member can be dissipated by the laminar flow of the inert gas along one surface of the window member.
  • the light source unit may be configured to emit vacuum ultraviolet rays having a planar cross section.
  • vacuum ultraviolet rays are emitted in a wide range through the window member. Therefore, the substrate exposure process can be completed in a short time.
  • the heat generated from the entire window member is dissipated by the flow of the inert gas, it is possible to prevent the temperature of the window member from rising even when vacuum ultraviolet rays are irradiated over a wide range of the window member. Thereby, the efficiency can be improved while maintaining the accuracy of the exposure process.
  • the emission area of the vacuum ultraviolet rays by the light source unit may be larger than the area of the substrate. In this case, since the entire surface of the substrate can be exposed, the exposure of the substrate can be completed in a shorter time. Thereby, the efficiency of the exposure process can be further improved.
  • a substrate processing apparatus includes a coating processing unit that forms a film on a substrate by applying a processing liquid to the substrate, and a thermal processing unit that heat-treats the substrate on which the film is formed by the coating processing unit. And an exposure apparatus according to one aspect of the present invention that exposes the substrate heat-treated by the heat treatment unit, and a development processing unit that develops a film on the substrate by supplying a solvent to the substrate exposed by the exposure device.
  • a film is formed on the substrate by applying the processing liquid to the substrate by the coating processing unit.
  • the substrate on which the film is formed by the coating processing unit is heat-treated by the heat treatment unit.
  • the substrate heat-treated by the heat treatment unit is exposed by the exposure apparatus.
  • the film on the substrate is developed by supplying a solvent to the substrate exposed by the exposure apparatus by the development processing unit.
  • the exposure apparatus heat generated in the window member is dissipated by the flow of the inert gas. Therefore, it is possible to prevent the temperature of the window member from rising without reducing the exposure efficiency of the substrate. Thereby, it can prevent that the illumination intensity of the vacuum ultraviolet-ray which permeate
  • the treatment liquid may contain an induction self-organizing material.
  • microphase separation occurs on one surface of the substrate by heat-treating the substrate coated with the treatment liquid containing the induced self-organizing material. Further, the substrate on which two types of polymer patterns are formed by microphase separation is exposed and developed. Thereby, one of the two types of polymers is removed, and a fine pattern can be formed.
  • An exposure method includes a step of irradiating a substrate accommodated in a processing chamber by a light source unit with vacuum ultraviolet light through a translucent window member attached to an opening of the processing chamber; Forming a flow of an inert gas along one surface of the window member by the airflow forming unit.
  • heat generated in the window member is dissipated by the flow of the inert gas. Therefore, it is possible to prevent the temperature of the window member from rising without reducing the exposure efficiency of the substrate. Thereby, it can prevent that the illumination intensity of the vacuum ultraviolet-ray which permeate
  • a film is formed on the substrate by applying a processing liquid to the surface to be processed of the substrate by the coating processing unit and the coating processing unit.
  • the substrate after film formation and before development is exposed to vacuum ultraviolet rays.
  • heat generated in the window member is dissipated by the flow of the inert gas. Therefore, it is possible to prevent the temperature of the window member from rising without reducing the exposure efficiency of the substrate. Thereby, it can prevent that the illumination intensity of the vacuum ultraviolet-ray which permeate
  • the accuracy and efficiency of the exposure process can be maintained.
  • FIG. 1 is a schematic sectional view showing the arrangement of an exposure apparatus according to an embodiment of the present invention.
  • FIG. 2 is a schematic bottom view when the inside of the exposure apparatus of FIG. 1 is viewed from a position below the mounting plate.
  • 3 is a cross-sectional view of the exposure apparatus of FIG. 2 along the line AA.
  • 4 is a cross-sectional view of the exposure apparatus of FIG. 2 taken along the line BB.
  • FIG. 5 is a perspective view showing the configuration of the ejection part of FIGS.
  • FIG. 6 is a side view showing the configuration of the ejection part and the ejection pipe of FIG.
  • FIG. 7 is a cross-sectional view taken along the line CC of the ejection part of FIG.
  • FIG. 1 is a schematic sectional view showing the arrangement of an exposure apparatus according to an embodiment of the present invention.
  • FIG. 2 is a schematic bottom view when the inside of the exposure apparatus of FIG. 1 is viewed from a position below the mounting plate.
  • FIG. 8 is a functional block diagram showing the configuration of the control unit of FIG.
  • FIG. 9 is a schematic diagram for explaining the operation of the exposure apparatus.
  • FIG. 10 is a schematic diagram for explaining the operation of the exposure apparatus.
  • FIG. 11 is a schematic diagram for explaining the operation of the exposure apparatus.
  • FIG. 12 is a schematic diagram for explaining the operation of the exposure apparatus.
  • FIG. 13 is a flowchart showing an example of an exposure process performed by the control unit of FIG.
  • FIG. 14 is a flowchart showing an example of an exposure process performed by the control unit of FIG.
  • FIG. 15 is a schematic block diagram showing the overall configuration of a substrate processing apparatus provided with the exposure apparatus of FIG.
  • FIG. 16 is a schematic view showing an example of substrate processing by the substrate processing apparatus of FIG. FIG.
  • FIG. 17 is a side view showing the configuration of the ejection pipe in another embodiment.
  • FIG. 18 is a schematic bottom view showing another example of the arrangement of the ejection part and the exhaust part.
  • FIG. 19 is a schematic bottom view showing still another example of the arrangement of the ejection part and the exhaust part.
  • the term “substrate” refers to a semiconductor substrate, an FPD (Flat Panel Display) substrate such as a liquid crystal display device or an organic EL (Electro Luminescence) display device, an optical disk substrate, a magnetic disk substrate, and a magneto-optical disk. It refers to a substrate, a photomask substrate, a solar cell substrate, or the like.
  • FIG. 1 is a schematic cross-sectional view showing the configuration of an exposure apparatus according to an embodiment of the present invention.
  • the exposure apparatus 100 includes a control unit 110, a processing chamber 120, a closing unit 130, a delivery unit 140, an elevating unit 150, a light projecting unit 160, a replacement unit 170, a measuring unit 180, and an airflow forming unit 190.
  • the control unit 110 acquires measurement values from the measurement unit 180 and controls operations of the blocking unit 130, the lifting unit 150, the light projecting unit 160, the replacement unit 170, and the airflow forming unit 190. The function of the control unit 110 will be described later.
  • the processing chamber 120 has an upper opening 121 and an internal space V1.
  • a transfer opening 122 for transferring the substrate W to be processed is formed between the inside and the outside of the processing chamber 120.
  • a film containing an induced self-organizing material hereinafter referred to as a DSA (Directed Self Assembly) film
  • a connecting member 152 of an elevating unit 150 described later passes is formed on the bottom surface of the processing chamber 120.
  • the closing part 130 includes a shutter 131, a rod-shaped connecting member 132, and a driving device 133.
  • the connecting member 132 connects the shutter 131 and the driving device 133.
  • the drive device 133 is a stepping motor, for example.
  • the driving device 133 moves the shutter 131 between an open position where the shutter 131 opens the transport opening 122 and a closed position where the shutter 131 closes the transport opening 122.
  • a seal member 131 a is attached to the shutter 131.
  • the inside of the processing chamber 120 is hermetically sealed by the seal member 131 a being in close contact with the portion surrounding the transfer opening 122 in the processing chamber 120.
  • the driving device 133 moves the shutter 131 away from the processing chamber 120 when moving the shutter 131 between the open position and the closed position. Move up and down in the state.
  • Position sensors 133a and 133b for detecting the upper limit position and the lower limit position of the shutter 131 are attached to the driving device 133.
  • the position sensors 133a and 133b give the detection result to the control unit 110.
  • the driving device 133 and a driving device 153 described later are provided outside the processing chamber 120. Therefore, even when dust is generated by driving the driving devices 133 and 153, the dust is prevented from directly entering the processing chamber 120.
  • the delivery unit 140 includes, for example, a disk-shaped support plate 141 and a plurality (three in this example) of support pins 142.
  • the support plate 141 is disposed in the processing chamber 120 in a horizontal posture.
  • an opening 141a is formed through which a connecting member 152 of an elevating unit 150 described later passes.
  • the plurality of support pins 142 extend upward from the upper surface of the support plate 141 so as to surround the opening 141a.
  • the substrate W to be processed can be placed on the upper ends of the plurality of support pins 142.
  • the elevating unit 150 includes a plate-shaped mounting plate 151, a rod-shaped connecting member 152, and a driving device 153.
  • the mounting plate 151 is arranged in a horizontal posture above the support plate 141 of the delivery unit 140 in the processing chamber 120.
  • a plurality of through holes 151 a corresponding to the plurality of support pins 142 of the support plate 141 are formed in the mounting plate 151.
  • the connecting member 152 is disposed so as to extend vertically through the opening 123 of the processing chamber 120 and the opening 141 a of the support plate 141, and the driving device 153 is disposed below the processing chamber 120.
  • the connecting member 152 connects the mounting plate 151 and the driving device 153.
  • a seal member 154 is disposed between the outer peripheral surface of the connecting member 152 and the inner peripheral surface of the opening 123 so that the connecting member 152 can slide in the vertical direction.
  • the driving device 153 is, for example, a stepping motor, and moves the mounting plate 151 between a processing position above the upper ends of the plurality of support pins 142 and a standby position below the upper ends of the plurality of support pins 142. Move up and down. In the state where the mounting plate 151 is in the standby position, the plurality of support pins 142 are inserted through the plurality of through holes 151a, respectively.
  • Position sensors 153 a and 153 b for detecting the upper limit position and the lower limit position of the mounting plate 151 are attached to the driving device 153. The position sensors 153a and 153b give the detection result to the control unit 110.
  • the light projecting unit 160 includes a housing 161 having a lower opening 161a and an internal space V2, a translucent plate 162, a planar light source unit 163, and a power supply device 164.
  • translucent plate 162 is a quartz glass plate.
  • the housing 161 is disposed above the processing chamber 120 so as to close the upper opening 121 of the processing chamber 120.
  • the translucent plate 162 is attached to the housing 161 so as to close the lower opening 161 a of the housing 161.
  • the internal space V ⁇ b> 1 of the processing chamber 120 and the internal space V ⁇ b> 2 of the housing 161 are optically accessible by a translucent plate 162.
  • the light source unit 163 and the power supply device 164 are accommodated in the housing 161.
  • the light source unit 163 is configured by horizontally arranging a plurality of rod-shaped light source elements 163a that emit vacuum ultraviolet rays having a wavelength of about 120 nm or more and about 230 nm or less at predetermined intervals.
  • Each light source element 163a may be, for example, a xenon excimer lamp, or another excimer lamp or a deuterium lamp.
  • the light source unit 163 emits vacuum ultraviolet rays having a substantially uniform light amount distribution into the processing chamber 120 through the translucent plate 162.
  • the area of the emission surface of the vacuum ultraviolet ray in the light source unit 163 is larger than the area of the surface to be processed of the substrate W.
  • the power supply device 164 supplies power to the light source unit 163.
  • the airflow forming unit 190 includes an ejection unit 191 and an exhaust unit 192 that are arranged to face each other with a space below the light transmitting plate 162 of the light projecting unit 160 interposed therebetween.
  • the ejection part 191 ejects an inert gas along the lower surface of the translucent plate 162, thereby forming a laminar flow of the inert gas along the lower surface of the translucent plate 162.
  • the exhaust unit 192 exhausts the inert gas ejected by the ejection unit 191 from the processing chamber 120.
  • nitrogen gas is used as the inert gas. Details of the configuration of the airflow forming unit 190 will be described later.
  • the replacement unit 170 includes pipes 171p, 172p, 173p, valves 171v, 172v, and a suction device 173.
  • the pipes 171p and 172p are connected between the air supply port of the processing chamber 120 and the inert gas supply source.
  • the inert gas is, for example, nitrogen gas.
  • Valves 171v and 172v are inserted in the pipes 171p and 172p.
  • the inert gas supply source to which the pipes 171p and 172p are connected may be an inert gas supply source 193 in FIG. 4 described later, or may be another inert gas supply source.
  • An inert gas is supplied into the processing chamber 120 from the side of the support plate 141 through the pipe 171p.
  • An inert gas is supplied into the processing chamber 120 from below the support plate 141 through the pipe 172p.
  • the flow rate of the inert gas is adjusted by valves 171v and 172v.
  • nitrogen gas is used as the inert gas.
  • the pipe 173p branches into a branch pipe 173a and a branch pipe 173b.
  • the branch pipe 173 a is connected to the exhaust port of the processing chamber 120, and the end of the branch pipe 173 b is disposed between the processing chamber 120 and the shutter 131.
  • a suction device 173 is inserted in the pipe 173p.
  • a valve 173v is inserted in the branch pipe 173b.
  • the suction device 173 is, for example, an ejector.
  • the pipe 173p is connected to the exhaust facility.
  • the exhaust equipment to which the pipe 173p is connected may be the exhaust equipment 194 in FIG. 4 described later, or other exhaust equipment.
  • the suction device 173 discharges the atmosphere in the processing chamber 120 through the branch pipe 173a and the pipe 173p.
  • the suction device 173 discharges the atmosphere between the processing chamber 120 and the shutter 131 through the branch pipe 173b and the pipe 173p together with dust generated by the movement of the shutter 131.
  • the gas discharged by the suction device 173 is rendered harmless by the exhaust facility.
  • the measuring unit 180 includes an oxygen concentration meter 181, an ozone concentration meter 182, and an illuminance meter 183.
  • the oxygen concentration meter 181, the ozone concentration meter 182 and the illuminance meter 183 are connected to the control unit 110 through connection ports p1, p2 and p3 provided in the processing chamber 120, respectively.
  • the oxygen concentration meter 181 is, for example, a galvanic cell type oxygen sensor or a zirconia type oxygen sensor, and measures the oxygen concentration in the processing chamber 120.
  • the ozone concentration meter 182 measures the ozone concentration in the processing chamber 120.
  • the illuminance meter 183 includes a light receiving element such as a photodiode, and measures the illuminance of vacuum ultraviolet rays from the light source unit 163 irradiated on the light receiving surface of the light receiving element.
  • the illuminance is a work rate of vacuum ultraviolet rays irradiated per unit area of the light receiving surface.
  • the unit of illuminance is represented by “W / m 2 ”, for example.
  • the atmosphere in the processing chamber 120 is replaced with an inert gas by the replacement unit 170.
  • the oxygen concentration in the processing chamber 120 is reduced.
  • the predetermined concentration is preferably an oxygen concentration (for example, 1%) at which ozone is not generated by the vacuum ultraviolet rays emitted from the light source unit 163.
  • the exposure amount of the vacuum ultraviolet rays applied to the substrate W reaches a predetermined set exposure amount, the irradiation of the vacuum ultraviolet rays is stopped and the exposure process is ended.
  • the exposure amount is the energy of vacuum ultraviolet rays irradiated per unit area of the surface to be processed of the substrate W during the exposure process.
  • the unit of the exposure amount is represented by “J / m 2 ”, for example. Therefore, the exposure amount of vacuum ultraviolet rays is acquired by integrating the illuminance of vacuum ultraviolet rays measured by the illuminance meter 183.
  • the exposure apparatus 100 is provided with an airflow forming unit 190 that suppresses an increase in the temperature of the translucent plate 162.
  • the configuration of the airflow forming unit 190 will be described.
  • FIG. 2 is a schematic bottom view when the inside of the exposure apparatus 100 of FIG. 1 is viewed from a position below the mounting plate 151.
  • FIG. 3 is a cross-sectional view of the exposure apparatus 100 of FIG. 2 along the line AA.
  • 4 is a cross-sectional view of the exposure apparatus 100 of FIG. 2 taken along line BB. 2 to 4, some components are not shown in order to facilitate understanding of the internal configuration of the exposure apparatus 100.
  • the translucent plate 162 has a substantially rectangular shape. A pair of side edges of the translucent plate 162 that are parallel to each other are referred to as side edges 162a and 162b, respectively.
  • the ejection portion 191 of the airflow forming portion 190 is provided horizontally below and on the outer side 162a of the translucent plate 162.
  • the exhaust part 192 of the airflow forming part 190 is provided horizontally below and on the outer side 162 b of the translucent plate 162.
  • the ejection portion 191 extends in parallel to the side 162a of the light transmitting plate 162
  • the exhaust portion 192 extends in parallel to the side 162b of the light transmitting plate 162.
  • the ejection part 191 and the exhaust part 192 face each other with the space below the translucent plate 162 interposed therebetween.
  • FIG. 5 is a perspective view showing the configuration of the ejection portion 191 shown in FIGS.
  • FIGS. 6A and 6B are side views showing the configurations of the ejection pipe 191a and the ejection portion 191 in FIG. 5, respectively.
  • FIGS. 7A to 7D are cross-sectional views taken along the line CC of the ejection portion 191 in FIG. 6B.
  • the ejection part 191 includes an ejection pipe 191a, a plurality (three in this example) of supply pipes 191b and a holding member 191c.
  • the ejection pipe 191a has a cylindrical shape extending in one direction. Both ends of the ejection pipe 191a are closed.
  • a plurality of ejection holes 191h are formed on the outer peripheral surface of the ejection pipe 191a in parallel to the axial direction of the ejection pipe 191a at a predetermined interval. The inside and the outside of the ejection pipe 191a communicate with each other through the plurality of ejection holes 191h.
  • the plurality of supply pipes 191b are connected between the ejection pipe 191a and the inert gas supply source 193. Specifically, one end of the plurality of supply pipes 191b is attached to the outer peripheral surface of the ejection pipe 191a through the holding member 191c so as to be arranged at a predetermined interval. The inside of the ejection pipe 191a communicates with the inside of each supply pipe 191b. The other ends of the plurality of supply pipes 191b are attached to an inert gas supply source 193. A valve 191v is inserted in each supply pipe 191b.
  • the holding member 191c is a cylindrical member having a substantially polygonal cross section extending in one direction.
  • a slit 191s extending in one direction is formed in the holding member 191c. Both ends of the holding member 191c are open.
  • the ejection pipe 191a is held in the holding member 191c.
  • the holding member 191c is attached in the processing chamber 120 of FIG. 1 so that the slit 191s faces inward of the processing chamber 120.
  • the inside and the outside of the holding member 191c communicate with each other through the slit 191s.
  • an inert gas is jetted along the lower surface of the translucent plate 162 through the slit 191s of the holding member 191c. Therefore, the ejection pipe 191a may be held by the holding member 191c with the plurality of ejection holes 191h facing in any direction.
  • the several ejection hole 191h is arrange
  • the plurality of ejection holes 191h are arranged in a state of facing obliquely upward 45 degrees.
  • the plurality of ejection holes 191h are arranged in a state of facing obliquely upward 25 degrees.
  • the plurality of ejection holes 191h are arranged in a state of facing obliquely downward 10 degrees.
  • the exhaust part 192 of FIG. 4 includes an exhaust pipe 192a, a plurality (three in this example) of recovery pipes 192b and a holding member 192c.
  • the exhaust pipe 192a and the holding member 192c have the same configuration as the ejection pipe 191a and the holding member 191c, respectively. Accordingly, a plurality of exhaust holes (not shown) similar to the ejection holes 191h are formed in the exhaust pipe 192a.
  • a slit 192s similar to the slit 191s is formed in the holding member 192c.
  • Each recovery pipe 192b has the same configuration as each supply pipe 191b except that it is connected to the exhaust facility 194 instead of the inert gas supply source 193.
  • the exhaust part 192 may have a configuration different from the ejection part 191.
  • a single member having a slit as the exhaust port may be used, or a single member having a plurality of exhaust holes as the exhaust port may be used.
  • the inert gas supplied from the inert gas supply source 193 is guided into the ejection pipe 191a through the plurality of supply pipes 191b. Further, the inert gas is ejected through the plurality of ejection holes 191h (FIG. 3) of the ejection pipe 191a and the slit 191s of the holding member 191c. As a result, the inert gas is guided between the light transmitting plate 162 and the substrate W in the direction of the exhaust portion 192 along the lower surface of the light transmitting plate 162 as indicated by an arrow in FIG. Thereby, a flow of an inert gas along the lower surface of the translucent plate 162 is formed.
  • the flow of the inert gas is a laminar flow having a cross-sectional band shape that is in contact with the entire lower surface of the light-transmitting plate 162.
  • the inert gas that has passed under the translucent plate 162 flows into the exhaust pipe 192a through the slit 192s of the holding member 192c and a plurality of exhaust holes (not shown) of the exhaust part 192. Thereafter, the inert gas is recovered to the exhaust facility 194 through a plurality of recovery pipes 192b. In this case, since the inert gas containing the heat from the translucent plate 162 is discharged to the outside of the processing chamber 120, the temperature rise of the translucent plate 162 is efficiently prevented.
  • FIG. 8 is a functional block diagram showing the configuration of the control unit 110 in FIG.
  • the control unit 110 includes a blockage control unit 1, a lift control unit 2, an exhaust control unit 3, an air supply control unit 4, a concentration acquisition unit 5, a concentration comparison unit 6, an airflow control unit 7, and illuminance acquisition.
  • Unit 8 an exposure amount calculation unit 9, an exposure amount comparison unit 10, and a light projection control unit 11.
  • the control unit 110 includes, for example, a CPU (Central Processing Unit) and a memory.
  • a control program is stored in advance in the memory of the control unit 110.
  • the function of each unit of the control unit 110 is realized by the CPU of the control unit 110 executing the control program stored in the memory.
  • the closing control unit 1 controls the driving device 133 so that the shutter 131 moves between the closing position and the opening position based on the detection results of the position sensors 133a and 133b in FIG.
  • the elevation control unit 2 controls the driving device 153 so that the mounting plate 151 moves between the standby position and the processing position based on the detection results of the position sensors 153a and 153b in FIG.
  • the exhaust control unit 3 controls the suction device 173 and the valve 173v so as to exhaust the atmosphere in the processing chamber 120 and the atmosphere between the processing chamber 120 and the shutter 131 in FIG.
  • the air supply control unit 4 controls the valves 171v and 172v in FIG. 1 so as to supply an inert gas into the processing chamber 120.
  • the concentration acquisition unit 5 acquires the value of the oxygen concentration measured by the oxygen concentration meter 181 of FIG.
  • the concentration comparison unit 6 compares the oxygen concentration measured by the concentration acquisition unit 5 with a predetermined concentration.
  • the airflow control unit 7 emits an inert gas from the ejection unit 191 in FIG. 4 and emits an inert gas by the exhaust unit 192 in a period in which the ultraviolet light is irradiated from the light source unit 163 to the substrate W by the light projection control unit 11.
  • the airflow forming unit 190 is controlled so as to be discharged.
  • the illuminance acquisition unit 8 acquires the value of the illuminance of vacuum ultraviolet rays measured by the illuminometer 183 in FIG.
  • the exposure amount calculation unit 9 applies the vacuum ultraviolet rays irradiated to the substrate W based on the illuminance of the vacuum ultraviolet rays acquired by the illuminance acquisition unit 8 and the irradiation time of the vacuum ultraviolet rays from the light source unit 163 in FIG.
  • the exposure amount is calculated.
  • the exposure amount comparison unit 10 compares the exposure amount calculated by the exposure amount calculation unit 9 with a predetermined set exposure amount.
  • the light projection control unit 11 controls the supply of power from the power supply device 164 of FIG. 1 to the light source unit 163 so that the light source unit 163 emits vacuum ultraviolet rays based on the comparison result by the concentration comparison unit 6. Further, the light projection control unit 11 supplies the exposure amount calculation unit 9 with the power supply time from the power supply device 164 to the light source unit 163 as the irradiation time of vacuum ultraviolet rays from the light source unit 163 to the substrate W. Further, the light projection control unit 11 controls the power supply device 164 so that the light source unit 163 stops the emission of the vacuum ultraviolet rays based on the comparison result by the exposure amount comparison unit 10.
  • FIGS. 9 to 12 are schematic diagrams for explaining the operation of the exposure apparatus 100. 9 to 12, in order to facilitate understanding of the configuration inside the processing chamber 120 and the housing 161, some components are not shown, and the outlines of the processing chamber 120 and the housing 161 are only one point. Indicated by a chain line. 13 and 14 are flowcharts showing an example of exposure processing performed by the control unit 110 in FIG. Hereinafter, the exposure processing by the control unit 110 will be described with reference to FIGS.
  • the shutter 131 is in the closed position and the mounting plate 151 is in the standby position. Further, the oxygen concentration in the processing chamber 120 is measured constantly or periodically by the oxygen concentration meter 181 and acquired by the concentration acquisition unit 5. At this time, the oxygen concentration in the processing chamber 120 measured by the oxygen concentration meter 181 is equal to the oxygen concentration in the atmosphere.
  • the closing control unit 1 moves the shutter 131 to the open position (step S1).
  • the substrate W to be processed can be placed on the upper ends of the plurality of support pins 142 through the transport opening 122.
  • the substrate W is placed on the upper ends of the plurality of support pins 142 by the transfer device 220 shown in FIG.
  • the elevation controller 2 determines whether or not the substrate W is placed on the upper ends of the plurality of support pins 142 (step S2). When the substrate W is not placed, the elevation control unit 2 waits until the substrate W is placed on the upper ends of the plurality of support pins 142. When the substrate W is placed, the elevation control unit 2 moves the shutter 131 to the closed position as shown in FIG. 11 (step S3).
  • the exhaust control unit 3 discharges the atmosphere in the processing chamber 120 by the suction device 173 of FIG. 1 (step S4). Further, the air supply control unit 4 supplies an inert gas into the processing chamber 120 through the pipes 171p and 172p in FIG. 1 (step S5). Either of the processes of steps S4 and S5 may be started first, or may be started simultaneously. Thereafter, as shown in FIG. 12, the elevation controller 2 moves the placement plate 151 to the processing position (step S6). As a result, the substrate W is transferred from the plurality of support pins 142 to the mounting plate 151 and is brought close to the translucent plate 162.
  • the concentration comparison unit 6 determines whether or not the oxygen concentration in the processing chamber 120 has decreased to a predetermined concentration (step S7). When the oxygen concentration has not decreased to the predetermined concentration, the concentration comparison unit 6 stands by until the oxygen concentration decreases to the predetermined concentration. When the oxygen concentration decreases to a predetermined concentration, the light projection control unit 11 causes the light source unit 163 to emit vacuum ultraviolet rays (step S8). Thereby, vacuum ultraviolet rays are irradiated onto the substrate W from the light source unit 163 through the light transmitting plate 162, and the DSA film formed on the surface to be processed is exposed.
  • the airflow control unit 7 causes the ejection unit 191 to eject the inert gas and causes the exhaust unit 192 to discharge the inert gas (step S9).
  • the illuminance acquisition unit 8 causes the illuminance meter 183 to start measuring the illuminance of vacuum ultraviolet rays, and acquires the measured illuminance from the illuminance meter 183 (step S10).
  • the processes in steps S8 to S10 are started almost simultaneously.
  • the exposure amount calculation unit 9 calculates the exposure amount of the vacuum ultraviolet ray irradiated to the substrate W by integrating the illuminance of the vacuum ultraviolet ray acquired by the illuminance acquisition unit 8 (step S11).
  • the exposure amount comparison unit 10 determines whether or not the exposure amount calculated by the exposure amount calculation unit 9 has reached the set exposure amount (step S12). When the exposure amount has not reached the set exposure amount, the exposure amount comparison unit 10 stands by until the exposure amount reaches the set exposure amount.
  • the light projection control unit 11 stops the emission of the vacuum ultraviolet rays from the light source unit 163 (step S13). Moreover, the airflow control unit 7 stops the ejection of the inert gas by the ejection unit 191 and the discharge of the inert gas by the exhaust unit 192 (step S14). Furthermore, the illuminance acquisition unit 8 stops the illuminance measurement by the illuminometer 183 (step S15). The processes in steps S13 to S15 are started almost simultaneously.
  • the elevation controller 2 lowers the placement plate 151 to the standby position (step S16).
  • the substrate W is transferred from the placement plate 151 to the plurality of support pins 142.
  • the exhaust control unit 3 stops the discharge of the atmosphere in the processing chamber 120 by the suction device 173 (step S17).
  • the air supply control unit 4 stops the supply of the inert gas from the pipes 171p and 172p into the processing chamber 120 (step S18). Any of the processes in steps S17 to S22 may be started first, or may be started simultaneously.
  • the closing control unit 1 moves the shutter 131 to the open position as shown in FIG. 10 (step S19). Accordingly, the exposed substrate W can be carried out from the plurality of support pins 142 to the outside of the processing chamber 120 through the transfer opening 122. In this example, the substrate W is unloaded from the plurality of support pins 142 to the outside of the processing chamber 120 by the transfer device 220 shown in FIG.
  • the closing control unit 1 determines whether or not the substrate W has been unloaded from the plurality of support pins 142 (step S20). When the substrate W has not been unloaded, the closing control unit 1 stands by until the substrate W is unloaded from the plurality of support pins 142. When the substrate W is carried out, the closing control unit 1 moves the shutter 131 to the closing position as shown in FIG. 9 (step S21), and the exposure process is ended. By repeating the above operation, exposure processing can be sequentially performed on the plurality of substrates W.
  • the ejection of the inert gas by the ejection unit 191 and the discharge of the inert gas by the exhaust unit 192 are performed in the same period as the irradiation of the vacuum ultraviolet rays from the light source unit 163 to the substrate W.
  • the invention is not limited to this.
  • the ejection of the inert gas and the discharge of the inert gas may be performed before or after the start of the irradiation of the vacuum ultraviolet rays onto the substrate W.
  • the stop of the ejection of the inert gas and the stop of the discharge of the inert gas may be performed before or after the stop of the irradiation of the vacuum ultraviolet rays onto the substrate W.
  • the ejection of the inert gas by the ejection unit 191 and the discharge of the inert gas by the exhaust unit 192 may be performed constantly when the shutter 131 is in the closed position. Therefore, the process of step S9 may be performed substantially simultaneously with the process of step S4 or step S5. Moreover, the process of step S14 may be performed substantially simultaneously with the process of step S17 or step S18.
  • FIG. 15 is a schematic block diagram showing the overall configuration of a substrate processing apparatus provided with the exposure apparatus 100 of FIG.
  • processing using block copolymer induced self-assembly is performed.
  • a processing liquid containing an induction self-organizing material is applied on the surface of the substrate W to be processed.
  • two types of polymer patterns are formed on the surface to be processed of the substrate W by microphase separation that occurs in the induced self-assembled material.
  • One of the two types of polymers is removed by the solvent.
  • the treatment liquid containing the induced self-organizing material is called DSA liquid.
  • DSA liquid a process for removing one of the two types of polymer patterns formed on the surface to be processed of the substrate W by microphase separation
  • a developer a solvent used for the development process
  • the substrate processing apparatus 200 includes a control device 210, a transport device 220, a heat treatment device 230, a coating device 240, and a developing device 250 in addition to the exposure device 100.
  • the control device 210 includes, for example, a CPU and a memory or a microcomputer, and controls operations of the transport device 220, the heat treatment device 230, the coating device 240, and the developing device 250.
  • the control device 210 gives a command for controlling the operation of the closing unit 130, the lifting unit 150, the light projecting unit 160, the replacement unit 170, and the airflow forming unit 190 of the exposure apparatus 100 of FIG.
  • the transport apparatus 220 transports the substrate W between the exposure apparatus 100, the heat treatment apparatus 230, the coating apparatus 240, and the development apparatus 250 while holding the substrate W to be processed.
  • the heat treatment apparatus 230 heat-treats the substrate W before and after the coating process by the coating apparatus 240 and the development process by the developing apparatus 250.
  • the coating apparatus 240 performs a film coating process by supplying a DSA liquid to the surface of the substrate W to be processed.
  • a block copolymer composed of two types of polymers is used as the DSA liquid.
  • Examples of combinations of two types of polymers include polystyrene-polymethyl methacrylate (PS-PMMA), polystyrene-polydimethylsiloxane (PS-PDMS), polystyrene-polyferrocenyldimethylsilane (PS-PFS), and polystyrene-polyethylene oxide.
  • PS-PEO polystyrene-polyvinylpyridine
  • PS-PHOST polystyrene-polyhydroxystyrene
  • PMMA-PMAPOSS polymethyl methacrylate-polymethacrylate polyhedral oligomeric silsesquioxane
  • the developing device 250 supplies the developer to the surface to be processed of the substrate W, thereby developing the film.
  • a solvent for the developer for example, toluene, heptane, acetone, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), cyclohexanone, acetic acid, tetrahydrofuran, isopropyl alcohol (IPA) or tetramethylammonium hydroxide (TMAH) ) And the like.
  • FIG. 16 is a schematic diagram showing an example of processing of the substrate W by the substrate processing apparatus 200 of FIG.
  • the state of the substrate W that changes each time processing is performed is shown in a cross-sectional view.
  • the base layer L1 is formed so as to cover the surface to be processed of the substrate W as shown in FIG.
  • a guide pattern L2 made of, for example, a photoresist is formed on L1.
  • the operation of the substrate processing apparatus 200 will be described with reference to FIGS. 15 and 16.
  • the transfer device 220 sequentially transfers the substrate W to be processed to the heat treatment device 230 and the coating device 240.
  • the temperature of the substrate W is adjusted to a temperature suitable for forming the DSA film.
  • the coating apparatus 240 the DSA liquid is supplied to the surface to be processed of the substrate W, and the coating process is performed. Accordingly, as shown in FIG. 16B, a DSA film L3 composed of two types of polymers is formed in a region on the base layer L1 where the guide pattern L2 is not formed.
  • the transfer device 220 sequentially transfers the substrate W on which the DSA film L3 is formed to the heat treatment device 230 and the exposure device 100.
  • the heat treatment apparatus 230 performs the heat treatment of the substrate W, thereby causing microphase separation in the DSA film L3.
  • a pattern Q1 made of one polymer and a pattern Q2 made of the other polymer are formed.
  • the linear pattern Q1 and the linear pattern Q2 are directionally formed along the guide pattern L2.
  • the substrate W is cooled in the heat treatment apparatus 230. Further, in the exposure apparatus 100, the entire DSA film L3 after microphase separation is irradiated with vacuum ultraviolet rays for modifying the DSA film L3, and exposure processing is performed. Thereby, the bond between one polymer and the other polymer is cut, and the pattern Q1 and the pattern Q2 are separated.
  • the transport device 220 sequentially transports the substrate W after the exposure processing by the exposure device 100 to the heat treatment device 230 and the developing device 250.
  • the substrate W is cooled in the heat treatment apparatus 230.
  • a developer is supplied to the DSA film L3 on the substrate W, and development processing is performed.
  • the pattern Q1 is removed, and finally the pattern Q2 remains on the substrate W.
  • the transport device 220 collects the substrate W after the development processing from the development device 250.
  • vacuum ultraviolet rays are irradiated to the substrate W accommodated in the processing chamber 120 by the light source unit 163 through the light transmitting plate 162 attached to the upper opening 121 of the processing chamber 120. Is done. Moreover, the flow of the inert gas along one surface of the translucent plate 162 is formed as a laminar flow by the ejection part 191 and the exhaust part 192.
  • the heat generated in the light transmitting plate 162 is dissipated by the flow of the inert gas. Further, the inert gas hardly absorbs the vacuum ultraviolet rays applied to the substrate W. Therefore, it is possible to prevent the temperature of the translucent plate 162 from rising without reducing the exposure efficiency of the substrate W. Thereby, it can prevent that the illumination intensity of the vacuum ultraviolet-ray which permeate
  • FIG. 17 is a side view showing the configuration of the ejection pipe 191a in another embodiment.
  • slits 191t extending in one direction are formed in the ejection pipe 191a instead of the plurality of ejection holes 191h in FIG. 6 (a).
  • the inside and the outside of the ejection pipe 191a communicate with each other through the slit 191t.
  • the inert gas having a strip-shaped cross section can be ejected from the slit 191t.
  • the exposure apparatus 100 includes one ejection part 191 and one exhaust part 192, but the present invention is not limited to this.
  • the exposure apparatus 100 may include a plurality of ejection portions 191.
  • the exposure apparatus 100 may include a plurality of exhaust units 192.
  • FIG. 18 is a schematic bottom view showing another example of the arrangement of the ejection part and the exhaust part.
  • the first ejection portion 191 ⁇ / b> A is provided horizontally below and on the outer side 162 a of the translucent plate 162, and the second ejection portion 191 ⁇ / b> B is disposed below the side 162 b of the translucent plate 162.
  • the exhaust portion 192 is provided horizontally below and outside one side 162c of the pair of sides 162c and 162d orthogonal to the sides 162a and 162b of the translucent plate 162.
  • the inert gas is jetted in the direction from the side 162a toward the side 162b along the lower surface of the translucent plate 162 by the first jet 191A.
  • the inert gas is ejected in the direction from the side 162b toward the side 162a along the lower surface of the translucent plate 162 by the second ejection portion 191B.
  • the ejected inert gas travels while being bent so as to approach the exhaust part 192, and reaches the exhaust part 192.
  • a laminar flow along the lower surface of the translucent plate 162 is formed by the inert gas ejected by the first and second ejection portions 191A and 191B.
  • FIG. 19 is a schematic bottom view showing still another example of the arrangement of the ejection part and the exhaust part.
  • the example of FIG. 19 is different from the example of FIG. 18 in that the first exhaust part 192A is provided horizontally below and outside one side 162c of the translucent plate 162, and the second exhaust part 192B is This is a point provided horizontally below and outside the other side 162d of the light transmitting plate 162.
  • the inert gas ejected by the first ejection part 191A proceeds while bending so as to approach the first and second exhaust parts 192A, 192B, and the first and second exhaust parts 192A. , 192B.
  • the inert gas ejected by the second ejection part 191B travels while being bent so as to approach the first and second exhaust parts 192A, 192B, and enters the first and second exhaust parts 192A, 192B.
  • a laminar flow along the lower surface of the translucent plate 162 is formed by the inert gas ejected by the first and second ejection portions 191A and 191B.
  • the exhaust part 192 is disposed at a position facing the ejection part 191 with the space below the translucent plate 162 interposed therebetween, but the present invention is not limited to this.
  • the exhaust part 192 may be disposed at another position.
  • the airflow formation part 190 contains the exhaust part 192, this invention is not limited to this. Since the inert gas ejected by the ejection part 191 is exhausted from the processing chamber 120 through the branch pipe 173a, the pipe 173p, and the suction device 173, the airflow formation part 190 may not include the exhaust part 192.
  • the DSA liquid is used as the processing liquid, but the present invention is not limited to this. Other processing liquids different from the DSA liquid may be used.
  • the exit surface of the vacuum ultraviolet ray is larger than the surface to be processed of the substrate W, and the entire surface of the substrate W is exposed.
  • the emission surface of the vacuum ultraviolet ray may be smaller than the surface to be processed of the substrate W, or the vacuum ultraviolet ray having a linear cross section may be emitted without having a planar cross section.
  • the vacuum ultraviolet ray is irradiated on the entire surface of the substrate W to be processed by relatively moving the vacuum ultraviolet ray emitting surface and the surface of the substrate W to be processed.
  • an inert gas is supplied into the processing chamber 120 during the exposure process, but the present invention is not limited to this. If the oxygen concentration in the processing chamber 120 can be sufficiently reduced during the exposure processing, the inert gas may not be supplied into the processing chamber 120.
  • the upper opening 121 is an example of an opening
  • the substrate W is an example of a substrate
  • the processing chamber 120 is an example of a processing chamber
  • the translucent plate 162 is an example of a window member
  • the part 163 is an example of a light source part
  • the airflow formation part 190 is an example of an airflow formation part.
  • the exposure apparatus 100 is an example of an exposure apparatus
  • the internal space V1 is an example of an internal space
  • the ejection part 191 is an example of an ejection part
  • the exhaust part 192 is an example of an exhaust part
  • the ejection pipe 191a is an ejection pipe.
  • the ejection hole 191h or the slit 191t is an example of the ejection port.
  • the holding member 191c is an example of the holding member
  • the slits 191s and 191t are examples of the first and second slits
  • the ejection hole 191h is an example of the ejection hole
  • the first and second ejection portions 191A, 191B is an example of the 1st and 2nd ejection part, respectively.
  • the coating device 240 is an example of a coating processing unit
  • the thermal processing device 230 is an example of a thermal processing unit
  • the developing device 250 is an example of a developing processing unit
  • the substrate processing device 200 is an example of a substrate processing device.

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne un dispositif d'exposition comportant: une chambre de traitement dotée d'une ouverture et recevant un substrat; un élément de fenêtre translucide fixé à l'ouverture de la chambre de traitement; une unité de source lumineuse irradiant le substrat présent dans la chambre de traitement avec des rayons ultraviolets sous vide à travers l'élément de fenêtre; et une unité de formation d'écoulement d'air formant un écoulement d'un gaz inerte le long d'une surface de l'élément de fenêtre. Dans le dispositif d'exposition, les rayons ultraviolets sous vide provenant de l'unité de source lumineuse sont rayonnés vers le substrat logé dans la chambre de traitement à travers l'élément de fenêtre translucide fixé à l'ouverture de la chambre de traitement. En outre, l'unité de formation d'écoulement d'air forme un écoulement d'un gaz inerte le long de la surface en question de l'élément de fenêtre.
PCT/JP2017/037053 2017-03-23 2017-10-12 Dispositif d'exposition, dispositif de traitement de substrats, procédé d'exposition de substrats, et procédé de traitement de substrats WO2018173344A1 (fr)

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JP7312622B2 (ja) * 2019-06-27 2023-07-21 東京エレクトロン株式会社 光照射装置、光照射方法及び記憶媒体
CN112526827A (zh) 2019-09-19 2021-03-19 株式会社斯库林集团 曝光装置
JP7295754B2 (ja) * 2019-09-19 2023-06-21 株式会社Ｓｃｒｅｅｎホールディングス 露光装置
JP7653860B2 (ja) * 2021-07-30 2025-03-31 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

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JPH104064A (ja) * 1996-06-17 1998-01-06 Toshiba Mach Co Ltd 枚葉式減圧ｃｖｄ装置
JP2015126044A (ja) * 2013-12-26 2015-07-06 ウシオ電機株式会社 真空紫外光照射処理装置
JP2015207621A (ja) * 2014-04-18 2015-11-19 東京エレクトロン株式会社 基板処理装置

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