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WO2018151052A1 - Circuit d'alimentation électrique sans chute de tension et circuit d'application - Google Patents

Circuit d'alimentation électrique sans chute de tension et circuit d'application Download PDF

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Publication number
WO2018151052A1
WO2018151052A1 PCT/JP2018/004694 JP2018004694W WO2018151052A1 WO 2018151052 A1 WO2018151052 A1 WO 2018151052A1 JP 2018004694 W JP2018004694 W JP 2018004694W WO 2018151052 A1 WO2018151052 A1 WO 2018151052A1
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WIPO (PCT)
Prior art keywords
voltage
power supply
type power
voltage drop
mosfet
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PCT/JP2018/004694
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English (en)
Japanese (ja)
Inventor
一穂 松本
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一穂 松本
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Publication date
Priority claimed from JP2017024516A external-priority patent/JP6137723B1/ja
Priority claimed from JP2017109590A external-priority patent/JP6191040B1/ja
Application filed by 一穂 松本 filed Critical 一穂 松本
Publication of WO2018151052A1 publication Critical patent/WO2018151052A1/fr

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/02—Conversion of AC power input into DC power output without possibility of reversal
    • H02M7/04—Conversion of AC power input into DC power output without possibility of reversal by static converters
    • H02M7/12—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

Definitions

  • JPA-2003348750 DC power supply circuit and standby power circuit using the power supply WO2200332105 Standby power circuit JPA_200959308 DC power switch JPA_2012506693 JPA_2013255425 System and method for imitating ideal diode of power control device JPB_6137723 Non-voltage drop type power supply circuit and its application circuit JPB_6147402 DC power distribution system JPB_6191040 Ideal diode using complex voltage drop type power supply circuit
  • Patent Documents 1 and 2 Patent Documents 1 and 2
  • an “ideal diode” that can reduce the forward voltage of the rectifying diode using a power MOSFET or the like.
  • Patent Document 4 Non-Patent Documents 1 and 2
  • an “ideal diode” is configured using a power MOSFET or the like, since it is a so-called synchronous rectification method that requires a separate power source for the control circuit, it has a circuit configuration that cannot be made into two terminals. Even if there is a power MOSFET having a withstand voltage of several thousand volts, it cannot be used for commercial AC rectification because the withstand voltage of the control integrated circuit is insufficient.
  • DC distribution is considered to be efficient because it can reduce unnecessary AC / DC conversion, but it cannot be expected to stop spontaneously once discharge has started, so a means to stop discharge is secured. It is necessary to keep it.
  • a method of intermittently repeating intermittently is conceivable.
  • the voltage is too high to rectify commercial 100V to 220V and use it as a power source for the control circuit, and the standby power is reduced to 0. There was a drawback that could not be made.
  • FIG. 1A shows a non-voltage drop type power supply (80) having a first basic circuit configuration.
  • a voltage dividing resistor at the source (S) of the depletion type FET (85d) (a circuit configuration using an Nch MOSFET, which can also be constituted by a Pch MOSFET or a junction type FET with reversed polarity).
  • (89, R1, R2) and the capacitor (C1) are connected in parallel, the voltage (V1) of the AC power supply (2) is applied to the drain (D) through the diode (82) for reverse voltage protection, and the gate ( G) is connected to the midpoint of the voltage dividing resistor (89, R1, R2).
  • the capacitance (86p, Cg) is between the gate (G) and the source (S) of the depletion type FET (85d). Since it exists, it operates under the influence of its time constant ⁇ (the product of the parallel combined resistance value of the voltage dividing resistors R1 and R2 and the capacitance (86p, Cg) between the gate (G) and the source (S)). Since a delay occurs, the capacitor (C1) is charged to a voltage higher than the charging voltage (Vc chg ).
  • FIG. 1B shows an operation waveform. Charging is performed when the voltage (V1) of the AC power supply (2) rises, and after charging to a voltage higher than the charging voltage (Vc chg ), the voltage (V G ) rises with a delay, and the depletion type FET The gate threshold voltage (V Gth ) of ( 85d ) is reached and a cut-off state is entered, and charging is completed.
  • the depletion type FET (85d) conducts when the voltage (V1) of the AC power supply (2) is low, there is little power loss during charging, and if the depletion type FET (85d) continues to be cut off after charging, Furthermore, even if the power supply voltage (V1) rises, the current (I1) does not flow, so that the power consumption due to the voltage drop is small.
  • the voltage (V2) across the capacitor (C1) varies depending on the characteristics of the depletion type FET (85d) used, a direct current of several volts to several tens of volts can be obtained.
  • Rg high-resistance
  • the series resistance (Rf), the voltage dividing resistance (89, R1, R2), the parallel capacitance (Cs), and the like indicate elements that impede pulsed charging of the non-voltage drop type power supply (80).
  • the operation waveform (V2) as shown in FIG. 2B is obtained, and the charging current (I1) collapses from the pulse shape, and the current (I1) continues to flow even when the power supply voltage (V1) rises.
  • a Zener diode (82z) and a resistor (Rz) indicate a method for reducing an excessive voltage.
  • a junction type FET is used as the depletion type FET (85d)
  • the influence of the leakage current of the gate (G) must be considered.
  • FIG. 3A shows a complex voltage drop type power supply (80j) having a second basic circuit configuration.
  • This is a method of rectifying the AC power supply (2) by using a capacitor (C0) with a capacitor (C0) and securing the power for the control circuit, and is a circuit configuration method that is generally widely used.
  • a complex voltage drop is performed by the capacitor (C0), and the voltage is rectified by the diodes (D1, D2) to obtain DC power in the capacitors (C1, C2). Since the complex voltage drop due to the capacitor (C0) is used, no power consumption is involved.
  • the voltage (V2 +, V2-) of the capacitors (C1, C2) increases every cycle of the AC power supply (2).
  • the voltage reaches a maximum of 1.42 times the effective voltage of the AC power supply (2).
  • a Zener diode (82z) or the like In order to stably obtain a voltage of several volts to several tens of volts, it is necessary to make a constant voltage by consuming surplus power with a Zener diode (82z) or the like.
  • Non-voltage drop type power supply (80) (a) Basic circuit 1, (b) Operation waveform Operation inhibiting element (a) Adjustment element, (b) Operation waveform 1, (c) Operation waveform 2 Complex voltage drop type power supply (80j) (a) Basic circuit 2, (b) Operation waveform Ideal diode (82i, non-falling type) (a) circuit configuration, (b) operation waveform, (c) symbol notation, (d) external component, (e) bridge rectifier circuit, (f) full wave rectification waveform Ideal diode (82j, complex type) (a) circuit configuration, (b) operation waveform (ideal diode), (c) operation waveform (power supply unit), (d) rectified waveform (ideal diode), (e) rectified waveform ( Power supply part) Ideal diode (82j, complex type) (a) Symbol (NchMOSFET), (b) Symbol (PchMOSFET), (c) Bridge rectifier circuit, (d) Operation waveform Duplex ideal di
  • the power is supplied from the non-voltage drop type power supply (80) to the operational amplifier (83), and the voltage between the source (S) and drain (D) of the enhancement type power MOSFET (85e-1) is changed to the resistance (Rs).
  • a polarity detector (83D) is configured. Only when the direction of the current (I2) is negative (the conduction direction of the ideal diode (82i)), a positive voltage (V4) is applied to the gate (G), and the gate of the enhancement type power MOSFET (85e-1) (G ) To drive the enhancement-type power MOSFET (85e-1) to reduce the voltage drop.
  • FIG. 4B shows operation waveforms of the circuit (a).
  • the upper stage shows the flow of current (I2) flowing from the drain (D) to the source (S) of the enhancement type power MOSFET (85e-1), and the lower stage shows the input voltage (V3, chain line) of the operational amplifier (83) and the operational amplifier (83).
  • 83) (V4, solid line: voltage applied to the gate).
  • the current (I2) flowing through the enhancement type power MOSFET (85e-1) flows in the conduction direction of the parasitic diode (82p) (in the direction opposite to the arrow of I2), and is therefore expressed as negative.
  • the operational amplifier (83) performs inversion amplification, and a positive voltage (V4) is applied to the gate (G).
  • the voltage (V4) of the gate (G) is quickly lowered to 0V and the enhancement type power MOSFET (85e-1) is shut off. To do.
  • an operational amplifier (83) that operates with a single power supply is used, but the fact that the direction of the current flowing through the on-resistance of several milliohms is reversed is detected by comparison in the negative voltage region of several millivolts.
  • a high resistance (Rh) is connected to the inverting input terminal ( ⁇ ) of the operational amplifier 83, and a minute positive voltage is applied by the resistance voltage divider (Radj), so that the inverting input terminal The voltage of (-) is shifted to the positive voltage side.
  • the enhancement type power MOSFET When the voltage (V3) is negative, if the internal resistance of the enhancement type power MOSFET (85e-1) decreases, the input voltage (V3) of the operational amplifier also decreases, so that negative feedback is provided, so the enhancement type power MOSFET The operation is performed so that the voltage between the drain (D) and the source (S) of (85e-1) maintains a constant value. Further, since the on-resistance of the enhancement type power MOSFET (85e-1) increases when the current (I2) decreases, it is possible to obtain a condition that makes it easy to detect the direction change of the current because of the negative feedback. it can. In order to increase the current capacity, a plurality of enhancement type power MOSFETs can be connected in parallel. Different voltage-dividing resistors are passed through the gates (G), for example, so that the voltages to be turned on are different, the loop gain is lowered, and the current direction change can be easily detected. (Suppresses excessive gain by adding FET.)
  • the ideal diode (82i) using the non-voltage drop type power supply (80) can handle the entire circuit as a two-terminal ideal diode (82i).
  • FIG. 4C is a symbolized representation of an ideal diode (82i) using a non-voltage drop type power supply (80).
  • An arrow extending from the cathode (K) (in the case of an Nch MOSFET) is a symbol of an ideal diode (82i) indicating that power is supplied to the internal circuit.
  • FIG. 4D is also a representation of the ideal diode 82i symbolized, but clearly shows that the capacitor C1 of the non-voltage drop type power supply 80 is externally attached. (There is no change that it can be handled as two terminals.)
  • FIG. 4 (e) represents a bridge rectifier circuit (24) constituted by an ideal diode (82i) using the symbols shown in FIG. 4 (d). Since the diodes (Dc) and (Dd) connect the anodes (A), both the common lines (80c) have the same potential. Therefore, the non-voltage drop type power supply (80) can be shared with each other. it can. (Effective when configuring a module.)
  • the common line (80c) is not at the same potential, and the built-in non-voltage drop type power supply circuit (80) is provided. It cannot be shared.
  • an ideal diode (82i, including a non-voltage drop type power supply (80)) is configured using an enhancement type power MOSFET of Pch, since the cathodes become a common line (80c), the diode (Da) It is possible to share the non-voltage drop type power supply (80) of (Db) with each other.
  • the operational amplifier (83) to be used is an operational amplifier that can operate with a single power source that operates normally even when the common-mode input voltage of the input terminals (+,-) becomes a voltage near the positive power supply voltage. It is necessary to use it.
  • the ideal diodes (82i) configured using Nch and Pch enhancement type power MOSFETs (85e-1) are respectively diodes (Da, Dc)
  • the terminals connected to the AC power supply 2 are connected to the common line (80c). Therefore, since both a positive power source and a negative power source can be used in the internal circuit, the dual power source can be used for the operational amplifier (83).
  • the capacitor (C1) is externally attached. However, if the current consumption of the operational amplifier used is small, the capacity of the capacitor (C1) can be reduced. Is also possible.
  • the voltage of the smoothing capacitor (C2) is applied, so that the conduction angle of the current flowing in the forward direction is reduced, but the reverse voltage is applied to the ideal diode (82i) at the non-conduction angle. Therefore, power for driving the circuit can be obtained by the non-voltage drop type power supply (80).
  • the ideal diode (82i) of the application circuit 1 is limited to a use such as a rectifier circuit to which a reverse voltage is repeatedly applied.
  • FIG. 5A shows an ideal diode (82j) configured using a complex voltage drop type power supply (80j) and an Nch enhancement type power MOSFET (85e-1), which are the second basic circuit configuration.
  • the common line (80c) of the complex voltage drop type power supply (80j) is connected to the source (S) of the enhancement type power MOSFET (85e-1) to become the anode (A) of the ideal diode (82i) and the drain (D) Becomes the cathode (K).
  • a polarity detector (83D) is configured in addition to the inverting input ( ⁇ ) and the non-inverting input (+) of the operational amplifier (83).
  • the diode (82, D3) is for protecting an overvoltage of the operational amplifier (83).
  • FIG. 5B shows the waveform of the rectification operation of the ideal diode (82j).
  • the upper stage shows the flow of the current (I2) flowing from the drain (D) to the source (S) of the enhancement type power MOSFET (85e-1), and the lower stage shows the voltage (V3) of the inverting input terminal ( ⁇ ) of the operational amplifier (83).
  • the voltage (V3) of the inverting input terminal ( ⁇ ) of the operational amplifier (83) is negative
  • the voltage (V3) of the gate (G) decreases when the internal resistance of the enhancement type power MOSFET (85e-1) decreases. Therefore, since negative feedback occurs, the operation is performed so that the voltage between the drain (D) and the source (S) of the enhancement type power MOSFET (85e-1) maintains a constant value.
  • the negative feedback is provided, the on-resistance of the enhancement type power MOSFET (85e-1) increases when the current (I2) decreases, but it is possible to obtain a condition for easily detecting the direction change of the current. it can.
  • the loop gain is adjusted to set the operating range of the ideal diode (82j) according to the application.
  • the inverting output (V4) is directed to the potential below the common line (80c), so that the enhancement type power MOSFET (85e-1 ) Goes to the shut-off state.
  • the Pch enhancement type power MOSFET (85e-1) is used, the conduction direction is reversed, so that the display of the anode (A) and the cathode (K) in FIG. It is necessary to connect (Radj) to the positive voltage side and apply a positive voltage of several millivolts to the non-inverting input terminal (+).
  • the ideal diode (82j) using the complex voltage drop type power supply (80j) can handle the entire circuit as a two-terminal ideal diode (82j).
  • FIG. 6B is a symbolized representation of an ideal diode (82j) using a Pch enhancement type power MOSFET (85e-1).
  • the anode (A) and the cathode (K) are interchanged, and the arrow changes to an arrow extending from the anode (A).
  • FIG. 6C shows the bridge rectifier circuit 24 using the symbols in FIG. 6A
  • FIG. 6D shows its operation waveform. Since the voltage of the smoothing capacitor (C3) is applied, the conduction angle of the forward current (I2) is reduced. At the non-conduction angle, a reverse voltage is applied to each ideal diode (82j), so that power for driving the circuit can be obtained from the complex voltage drop type power supply (80j).
  • the ideal diode (82j) is limited to applications where a voltage in the reverse direction is repeatedly applied, such as a rectifier circuit of the AC power supply (2).
  • the breakdown voltage and capacity of the capacitor (C0) are selected according to the voltage range applied in the reverse direction.
  • an example using a complex voltage drop type power supply (80j) having both positive and negative power supply configurations is shown.
  • a capacitor (C1) and a Zener diode (Dz1) or a capacitor (C2) and a Zener diode (Dz2) are shown.
  • a complex voltage drop type power supply circuit (80j) of a single power source of only positive or only negative can be configured.
  • the non-inverting input (+) of the operational amplifier (83) is connected to the common line (80c), and a resistor is connected to the inverting input ( ⁇ ). It is necessary to apply a voltage of several millivolts.
  • the Zener diode (82z) that consumes surplus power can be used as a light source such as an indication of the operating state or a power indicator of a device incorporating the ideal diode (82j). .
  • the MOSFET (85e-3) is cut off and the operational amplifier (83) Since the inverting input ( ⁇ ) becomes 0 V, the output is inverted to cut off the two enhancement type power MOSFETs (85e-1, 85e-2).
  • the voltage to be inverted can be adjusted by adding a voltage dividing resistor (89) to the gate (G) of the MOSFET (85e-3).
  • FIG. 7 (b) shows the solar diode panel (11) connected in parallel using the symbol of the ideal diode (82ii) (the bar structure of the diode symbol is outlined because the internal configuration is different).
  • a connection example is shown.
  • solar panels (11) of a plurality of systems are connected in parallel and the power conditioner (13) is operating at the optimum input voltage, a voltage increase of about 5% when one system is shut down (system When the voltage is 400 V, about 20 V) is expected, and driving power can be obtained by performing a short interruption of about several tens of milliseconds for each system.
  • the common line (80c) cannot be shared with an external circuit.
  • FIG. 8A shows a first basic circuit configuration, a non-voltage drop type power supply (80) and two enhancement type power MOSFETs (85e-1 and 85e-2), which are turned on and off according to illuminance.
  • FIG. 8B shows an operation waveform. (The broken line is an operation waveform when the illuminance is large.)
  • the voltage of the non-voltage drop type power supply (80) is not exceeded by the diode (82-2) through the diode (82-1) and the resistor (88, Rs). Restricted to Further, the voltage (V3) is applied to the non-inverting input terminal (+) of the operational amplifier (83) through the voltage dividing resistors (89, R3, R4). A voltage (V2) divided by the optical sensor (84s, CDS) and the resistor (88, Rh) is applied to the inverting input terminal ( ⁇ ) of the operational amplifier (83). When the illuminance is high, the resistance value of the optical sensor (84s, CDS) decreases, and the voltage (V2) of the inverting input terminal ( ⁇ ) increases.
  • the electronic switch (84) in the operating state cuts off the current (I2) and charges the non-voltage drop type power supply (80).
  • the output pulse width (t) of the one-shot pulse generator (84p) is set slightly shorter than the cycle (T) of the AC power supply (2) so as not to hinder the charging of the non-voltage drop type power supply (80).
  • Has hysteresis In order to provide positive feedback to the non-inverting input terminal (+) of the operational amplifier (83) by the diode (82-3), the capacitor (C3) and the resistor (88, Rf), and to ensure the on-off transition, Has hysteresis.
  • FIG. 9B shows operation waveforms.
  • the voltage (V1) is the voltage of the power supply (1)
  • the voltage (V4) is the voltage between the gate (G) and the source (S)
  • the current (I1) is the charge of the non-voltage drop type power supply (80). Current is shown.
  • the periodic pulse generator (84P) conducts the enhancement type power MOSFET (85e-1) for a certain period of time, and supplies power to the load (R L ).
  • the enhancement type power MOSFET (85e-1) is cut off, the current (I1) flows, and driving power is obtained in the capacitor (C1), and this is repeated. Since an intermittent direct current is output to the output terminal (80O) of FIG. 9A, the output of the application circuit 5 is a power supply (12) whose voltage changes.
  • FIG. 9C is a symbolized representation of the electronic switch (84) driven by the periodic pulse generator (84P).
  • the periodic pulse generator (80P) When the periodic pulse generator (80P) is not built in, it is necessary to connect and use the power supply (12) whose voltage changes. When the voltage of the output terminal (80O) does not decrease, such as a capacitive load, driving power may not be obtained. Due to the influence of the parasitic diode (82p), the direction of the voltage applied to the electronic switch (84) is limited.
  • FIG. 10A shows a first non-voltage drop type power supply (80) and an N-ch enhancement type power MOSFET (85e-1), a P-ch MOSFET (85x), and a first basic circuit configuration. Equipped with an overcurrent detector (84I) and safety electrode current detector (84g) that operate with power from a non-voltage drop type power supply (80), or other sensors (earthquake, fire) not shown in the figure.
  • FIG. 10B shows an operation waveform.
  • the voltage (V1) is the voltage of the power supply (1)
  • the voltage (V4) is the voltage between the gate (G) and the source (S)
  • the current (I1) is the charge of the non-voltage drop type power supply (80).
  • the current (I3) indicates the current of the Pch MOSFET (85x).
  • the enhancement type power MOSFET (85e-1) is turned on for a certain period of time to supply power to the load.
  • the enhancement type power MOSFET (85e-1) is cut off, if the load (R L ) is capacitive, the voltage across the load is maintained, so there is a possibility that sufficient current (I1) does not flow. is there.
  • the Pch MOSFET (85x) is pulse-driven to short-circuit the load (R L ) to obtain currents (I1, I3) for driving. It is the structure which ensures the electric power of. Since driving of the Pch MOSFET (85x) requires a negative voltage, a negative pulse voltage is applied to the gate (G) by capacitive coupling (Cc, R4). At the same time, a reverse voltage is applied to the ideal diodes (82i, 82j, 82ii) used on the load side by using the voltage accumulated in the capacitor (C6) to secure driving power. (Although not shown in the figure, when the enhancement type power MOSFET (85e-2) is provided, the enhancement type power MOSFET (85e-2) is turned on simultaneously with the Pch MOSFET (85x).)
  • the current (I1) can be obtained with certainty, but even when there is no load, it is not shown in the figure because it continues to operate with power for driving.
  • the on-resistance was increased by forming a negative feedback path and controlling the voltage drop of the enhancement type power MOSFET (85e-1) to be a constant value around 10 millivolts. Even in the situation, if the voltage drop is several millivolts or less, it can be reliably detected that there is no load.
  • FIG. 10C represents a safety breaker (31) for direct current distribution that interrupts power using the symbol of the electronic switch (84).
  • FIG. 11 shows a “DC power distribution system” that intermittently supplies power using an electronic switch (84) including a non-voltage drop type power supply (80) that is a first basic circuit configuration.
  • the DC power distribution system supplies intermittent power at different times from the power distribution board (3) through two lines of wiring, and combines them with ideal diodes (82i, 82j, 82ii) on the electrical equipment (6) side. It has a configuration that can receive no DC power. (In the case of the low-power electric device (6), it is operated by supplying one system. Similar to the single-phase three-wire wiring of the commercial AC power supply, it is applied to the high-power electric device (6). Reference 6)
  • the electric device (6) that operates with the intermittent direct current (12) can be designed to operate with the non-smooth direct current (12) obtained by full-wave rectification of the commercial AC power supply (2).
  • a conversion plug and conversion outlet with a built-in bridge rectifier (24) of ideal diodes (82i, 82j, 82ii) electrical equipment (6) operating on DC can be connected to commercial AC power supply (2) is there.
  • the present application can provide a practical ideal diode or electronic switch by efficiently and easily obtaining a minute DC power, and driving a power MOSFET or the like using the power to provide a practical ideal diode or electronic switch.
  • a rectifier circuit, a DC power distribution system, or the like can be configured.

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  • Power Engineering (AREA)
  • Rectifiers (AREA)
  • Dc-Dc Converters (AREA)

Abstract

Le problème décrit par la présente invention est que, afin de former un commutateur électronique permettant de commuter par intermittence une alimentation électrique commerciale à l'aide d'un MOSFET de puissance, une puissance d'entraînement, bien que très petite, est nécessaire et, par conséquent, une configuration de circuit classique présente l'inconvénient, par exemple, de consommer de l'énergie même pendant un temps de non-charge. Bien qu'un schéma de redressement hautement efficace utilisant le MOSFET de puissance existe, le schéma nécessite séparément une puissance d'entraînement et ne peut donc pas être traité comme une diode à deux bornes. Par conséquent, un procédé simple permettant d'obtenir une très petite puissance pour commander dix et plusieurs volts est souhaitable. La solution selon l'invention porte sur un circuit d'alimentation électrique sans chute de tension, sur un commutateur électronique utilisant un MOSFET de puissance, et sur une diode idéale pouvant être considérée comme une diode à deux bornes. Le circuit d'alimentation électrique sans chute de tension peut obtenir une très petite puissance sans provoquer de chute de tension de telle sorte que : une résistance ayant une résistance élevée est connectée à la grille d'un FET de type à appauvrissement afin de provoquer un retard de fonctionnement ; et une charge instantanée est effectuée lorsque la tension d'alimentation électrique atteint une tension requise.
PCT/JP2018/004694 2017-02-14 2018-02-09 Circuit d'alimentation électrique sans chute de tension et circuit d'application WO2018151052A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2017024516A JP6137723B1 (ja) 2017-02-14 2017-02-14 電圧非降下型電源回路及びその応用回路
JP2017-024516 2017-02-14
JP2017109590A JP6191040B1 (ja) 2017-06-01 2017-06-01 複素電圧降下型電源回路を用いた理想ダイオード
JP2017-109590 2017-06-01

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Publication number Priority date Publication date Assignee Title
JP2001224179A (ja) * 2000-02-08 2001-08-17 Ntt Data Corp 整流器及び整流装置
US20040046532A1 (en) * 2002-09-09 2004-03-11 Paolo Menegoli Low dropout voltage regulator using a depletion pass transistor
JP2005518010A (ja) * 2002-02-18 2005-06-16 フリースケール セミコンダクター インコーポレイテッド 低ドロップアウト電圧レギュレータ
JP2013255425A (ja) * 2013-09-11 2013-12-19 Leach International Corp 電力制御装置の理想ダイオードを模倣するシステム及びその方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001224179A (ja) * 2000-02-08 2001-08-17 Ntt Data Corp 整流器及び整流装置
JP2005518010A (ja) * 2002-02-18 2005-06-16 フリースケール セミコンダクター インコーポレイテッド 低ドロップアウト電圧レギュレータ
US20040046532A1 (en) * 2002-09-09 2004-03-11 Paolo Menegoli Low dropout voltage regulator using a depletion pass transistor
JP2013255425A (ja) * 2013-09-11 2013-12-19 Leach International Corp 電力制御装置の理想ダイオードを模倣するシステム及びその方法

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