WO2017034122A1

WO2017034122A1 - Thin film transistor and display device

Info

Publication number: WO2017034122A1
Application number: PCT/KR2016/005357
Authority: WO
Inventors: 이상걸; 유상희; 김광태; 유연택; 김남수; 조석호; 최훈; 신현진; 임화춘
Original assignee: 엘지디스플레이 주식회사
Priority date: 2015-08-26
Filing date: 2016-05-20
Publication date: 2017-03-02

Abstract

According to an embodiment of the present invention, a thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode in a non-pixel region of a substrate comprises: a first insulating layer for insulating the gate electrode from the source electrode and the drain electrode; and a second insulating layer for covering the source electrode and the drain electrode. According to an embodiment of the present invention, the first insulating layer and the second insulating layer are configured so as not to extend to the pixel region so that oscillation of the substrate with respect to a viewing angle which can be generated when specific light of the light source passes through the pixel region is minimized.

Description

Thin Film Transistors and Displays

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor and a display device, and more particularly, to an insulating layer configured in a pixel region of a liquid crystal panel in a structure in which specific light including a plurality of peak wavelengths is supplied to a liquid crystal panel for high resolution. By optimizing the structure, the problem that the display quality is deteriorated with the viewing angle is improved.

A display apparatus is an apparatus for displaying an image, and is used in various apparatuses such as televisions, mobile devices, laptops, vehicles, watches, and the like.

One of the display devices, a liquid crystal display apparatus (LCD), is driven by an image realization principle based on optical anisotropy and polarization of liquid crystals. A liquid crystal display device is an essential component of a liquid crystal panel bonded through a liquid crystal layer between two substrates, and creates an electric field in the liquid crystal panel to change the arrangement direction of liquid crystal molecules to realize a difference in transmittance. do.

However, since the liquid crystal panel does not have a self-luminous element, in order to display the difference in transmittance as an image, a separate light source for emitting white light is required. As a light source of the liquid crystal display, a cold cathode fluorescent lamp (CCFL), an external electrode fluorescent lamp (EEFL), a light emitting diode (LED), or the like may be used. In particular, since light emitting diodes have advantages of small size, low power consumption, high reliability, and the like, they are widely used as light sources of liquid crystal displays.

On the other hand, the light source of the liquid crystal display including the light emitting diode is generally made of a blue light emitting diode and a yellow phosphor. More specifically, a part of the blue light emitted from the blue light emitting diode is absorbed by the yellow phosphor and converted into yellow light, and the yellow light converted by the yellow phosphor and the remaining blue light not absorbed by the phosphor are mixed with each other, whereby white light Is implemented. The white light may include a blue peak wavelength and a yellow peak wavelength. The white light incident on the liquid crystal panel passes through the red, green, and blue color filters, and is implemented as pixels of red, green, and blue, respectively.

However, when using white light having a blue peak wavelength and a yellow peak wavelength as described above, it is difficult to realize high resolution or high color reproducibility of the liquid crystal display. Specifically, it is as follows.

Peak wavelength refers to a wavelength in which the intensity or intensity of light has a higher value than that of other wavelengths in a specific wavelength range. Accordingly, the white light composed of the blue peak wavelength and the yellow peak wavelength may have a higher intensity or intensity than the blue light and the yellow light.

That is, since the white light has a high intensity in the blue wavelength region, that is, because the intensity or intensity of the blue light is high, the light loss by the blue color filter when the white light passes through the blue color filter can be minimized. Can be.

In comparison, since white light has a relatively high intensity even in the wavelength region of yellow, that is, red or green light has a lower intensity or intensity than yellow light, so white light is a red color filter or a green color filter. Light loss may occur when passing through. In other words, the red color filter or the green color filter only passes the light in the wavelength range corresponding to each other, so that high intensity yellow light is blocked by the red or green color filter, and only low intensity red or green light passes. Can be. Therefore, since the light efficiency of the red or green pixels is lowered, it may be difficult to implement high resolution or high color reproducibility of the display device.

The inventors of the present invention, when the white light of the light source has a peak wavelength in the wavelength region corresponding to each color filter, the light loss by the color filter is minimized to facilitate the high resolution or high color reproducibility of the display device Recognized. That is, when white light has high intensity in all of the red wavelength region, the green wavelength region, and the blue wavelength region, light loss by the color filters of red, green, and blue can be minimized.

The inventors of the present invention have fabricated a light source that emits white light having a uniformly high intensity at peak wavelengths of red, green and blue using a blue light emitting diode, a red phosphor and a green phosphor. In this process, the inventors of the present invention are difficult to control the wavelengths of the blue light emitting diodes, the wavelengths of the red phosphors, and the wavelengths of the green phosphors, or to combine colors with each other. It is recognized that implementing the characteristics of the wavelength is a difficult problem. Specifically, the inventors of the present invention recognized that adjusting the intensity or full width at half maximum (FWHM) of each peak wavelength to a desired value is a difficult manufacturing problem.

For example, in the fabrication of a light source in which white light including red, green and blue peak wavelengths is emitted in order to realize high resolution or high color reproducibility, the half width of red light may be reduced due to material limitations of a light emitting diode or a phosphor. It may have a value that is much smaller than the half width of the green light or the blue light. When the half width of the light becomes small, a problem may arise in that the viewing angle dependence such as the light is greatly shifted or the intensity is decreased depending on the viewing angle of the liquid crystal panel.

In particular, the liquid crystal panel has a structure including a plurality of thin film layers such as a metal layer or an insulating layer. As described above, when white light including a red peak wavelength having a narrow half-value width passes through the liquid crystal panel, the refractive index difference between the thin film layers is different. The color separation phenomenon of the red light according to the viewing angle may be further increased. The color separation phenomenon is a phenomenon in which the transmittance of a specific light is oscillated and color is separated according to the viewing state. The color separation phenomenon may increase rapidly as the difference in refractive index between the thin film layers or the light having a narrow half width is increased. have. That is, in the red light having a narrow half width, the transmittance fluctuation according to the viewing angle due to the difference in refractive index between the thin film layers is further increased, compared to the blue light or green light having a relatively half full width, and thus the variation in color reproduction according to the viewing angle is increased. As a result, the display quality of the display device may be degraded.

Accordingly, the inventors of the present invention recognize the above-mentioned problems and have a structure in which white light including all of the characteristic of light required for high resolution, for example, peak wavelengths of red, green, and blue is supplied to the liquid crystal panel. A new thin film transistor and display device having an improved display quality deterioration depending on a viewing angle, even when the half width of one of the red, green, and blue peak wavelengths is very narrow due to the material limitation of the phosphor. Invented.

According to an embodiment of the present invention, in order to realize high resolution or high color reproducibility, a half width of one peak wavelength of one peak wavelength in a structure in which white light including a plurality of peak wavelengths is supplied to a liquid crystal panel In the case of having a value that is much smaller than the half width of the other peak wavelengths, the thin film transistor and the display device are improved by optimizing the insulating layer structure formed in the pixel region of the liquid crystal panel, whereby the transmittance and color reproducibility are varied depending on the viewing angle. will be.

Problems according to an embodiment of the present invention are not limited to the above-mentioned problems, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

A display device according to an exemplary embodiment of the present invention includes a liquid crystal panel including a pixel area and a non-pixel area, and a light source for supplying specific light to the liquid crystal panel. The specific light includes a first peak wavelength and a second peak wavelength having a half width of 25% or less compared with the half width of the first peak wavelength. The liquid crystal panel includes a thin film transistor including a gate electrode, an active layer, a source electrode and a drain electrode on a non-pixel region of a substrate, a first insulating layer insulating the gate electrode, the source electrode, and the drain electrode of the thin film transistor; An insulating layer structure including at least one of a second insulating layer covering a source electrode and a drain electrode of the thin film transistor, a third insulating layer having a flat top surface on the second insulating layer, and the liquid crystal layer on the insulating layer structure It includes an electrode unit for driving. According to an embodiment of the present invention, the insulation layer structure of the pixel region and the insulation layer of the non-pixel region are minimized so that transmittance oscillation according to a viewing angle that may occur while specific light of the light source passes through the pixel region is minimized. The structures are constructed differently. Accordingly, the variation of the color reproducibility of the display device according to the viewing angle may be minimized, thereby reducing the display quality of the display device.

According to an embodiment of the present invention, a thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode in a non-pixel region of a substrate may include a first insulating layer that insulates the gate electrode, the source electrode, and the drain electrode. A first insulating layer, a second insulating layer covering the source electrode and the drain electrode. According to an embodiment of the present invention, the first insulating layer and the second insulating layer may be provided with respect to the substrate such that transmittance oscillation is minimized according to a viewing angle that may occur while specific light of a light source passes through the pixel region. And does not extend to the pixel region.

According to another exemplary embodiment, a display device includes an active region including an opening configured to transmit light and a non-opening portion adjacent to the opening and not transmitting the light, and an inactive region in which the gate-in panel is disposed adjacent to the active region. A first sub insulation layer having a first refractive index disposed in the non-opening portion and the inactive region of the active region, and a second refractive index disposed in the entire active region and the non-active region and having a lower refractive index than the first refractive index. And a second sub insulation layer. Accordingly, the display device according to another embodiment of the present invention can minimize the deterioration of electrical characteristics that can be caused by the defect of the active layer made of the oxide semiconductor, and can improve the display quality of the display device.

According to an embodiment of the present invention, in a structure in which a specific light including a plurality of peak wavelengths is supplied to the liquid crystal panel for high resolution, when the half width (FWHM) difference between the peak wavelengths of the specific light is large, By optimizing the insulating layer structure configured in the pixel region, color separation of peak wavelengths having a relatively narrow half width can be minimized.

Accordingly, there is an effect that the variation in transmittance of specific light according to the viewing angle is minimized.

In addition, the variation of the color reproducibility of the display device according to the viewing angle may be minimized, thereby reducing the display quality of the display device.

In addition, it is possible to minimize the electrical defect of the active layer made of the oxide semiconductor to improve the reliability of the display device and to minimize fluctuations in the transmittance of specific light according to the viewing angle.

The effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those skilled in the art from the following description.

Since the content of the invention described in the problem, the problem solving means, and the effect to be solved above does not specify the essential features of the claim, the scope of the claims is not limited by the matter described in the content of the invention.

1 is a cross-sectional view and an enlarged view of a display device according to an exemplary embodiment of the present invention.

2 is a graph showing a spectrum of specific light of a light source according to an embodiment of the present invention.

3 is a cross-sectional view illustrating main components of a display device according to an exemplary embodiment of the present invention.

4A and 4B are graphs illustrating variation in transmittance according to viewing angles of a comparative example and an embodiment of the present invention.

5A and 5B are graphs illustrating changes in color coordinates according to viewing angles of a comparative example and an embodiment of the present invention.

6 is a plan view illustrating a display device according to another exemplary embodiment of the present invention.

7 through 9 are cross-sectional views of display devices of various exemplary embodiments taken along the line of FIG.

10A and 10B are graphs illustrating a change in color coordinates according to a viewing angle according to a comparative example and another embodiment of the present invention.

Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention and to provide general knowledge in the technical field to which the present invention pertains. It is provided to fully convey the scope of the invention to those skilled in the art, and the present invention is defined only by the scope of the claims.

Shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are exemplary, and the present invention is not limited to the illustrated items. Like reference numerals refer to like elements throughout. In addition, in describing the present invention, if it is determined that the detailed description of the related known technology may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.

In the case where 'comprises', 'haves', 'consists of' and the like mentioned in the present specification are used, other parts may be added unless 'only' is used. In the case where the component is expressed in the singular, the plural includes the plural unless specifically stated otherwise.

In interpreting a component, it is interpreted to include an error range even if there is no separate description.

In the case of the description of the positional relationship, for example, if the positional relationship of the two parts is described as 'on', 'upon', 'lower', 'next to', etc. Alternatively, one or more other parts may be located between the two parts unless 'direct' is used.

In the case of a description of a temporal relationship, for example, if the temporal after-term relationship is described as 'after', 'following', 'after', 'before', or the like, 'directly' or 'direct' This may include cases that are not continuous unless used.

The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are only used to distinguish one component from another. Therefore, the first component mentioned below may be a second component within the technical spirit of the present invention.

The size and thickness of each component shown in the drawings are shown for convenience of description, and the present invention is not necessarily limited to the size and thickness of the illustrated configuration.

The features of each of the various embodiments of the invention may be combined or combined with one another, in whole or in part, and various interlocking and driving technically may be possible, and each of the embodiments may be independently implemented with respect to each other or may be implemented in association with each other. It may be.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view and an enlarged view of a display device 1000 according to an exemplary embodiment. Referring to FIG. 1, the display device 1000 includes a light source 100, a light guide plate 200, an optical sheet 300, and a liquid crystal panel 400.

The liquid crystal panel 400 has a structure in which a liquid crystal layer 460 is interposed between two substrates 411 and 412 as a component for displaying an image of the display device 1000. The liquid crystal panel 400 uses a principle in which an arrangement direction of liquid crystal molecules of the liquid crystal layer 460 is changed by an electric field applied between two

electrodes

441 and 442, and the light source 100 passing through the light guide plate 200. When the light L is supplied to the liquid crystal panel 400, the amount of light transmitted according to the arrangement direction of the liquid crystal molecules of the liquid crystal layer 460 may be adjusted to express a desired image. The light L of the light source 100 incident on the liquid crystal panel 400 passes through the color filters 472 of the liquid crystal panel 400, for example, red, green, and blue color filters, respectively. And a blue pixel. The liquid crystal layer 460 may be arranged vertically or horizontally according to the driving mode.

The light guide plate 200 is disposed under the liquid crystal panel 400, and the light L of the light source 100 incident to the side surface of the light guide plate 200 is dispersed to the entire upper surface of the light guide plate 200, thereby displacing the liquid crystal panel 400. Is supplied. The light guide plate 200 may be made of a transparent material, and for example, polyolefine, polystyrene, polymethyl methacrylate (PMMA), polycarbonate (PC), silicon rubber, glass ( glass).

The optical sheet 300 is disposed between the liquid crystal panel 400 and the light guide plate 200 and is a layer for increasing the efficiency or luminance of the light L incident on the liquid crystal panel 400. The optical sheet 300 may include, for example, a prism sheet or a diffuser sheet. The prism sheet serves to increase the luminance of the light L incident on the liquid crystal panel 400 by refracting or condensing the light L emitted to the upper surface of the light guide plate 200 through the prism-shaped layer. The diffusion sheet evenly spreads the light L emitted to the upper surface of the light guide plate 200 to make the brightness of the light L uniform.

As shown in FIG. 1, the light source 100 is disposed at a side surface of the light guide plate 200, and the light L emitted from the light source 100 passes through the light guide plate 200 and the optical sheet 300. Supplied to 400. The light source 100 of the display device 1000 according to the exemplary embodiment of the present invention has a structure that emits white light including a plurality of peak wavelengths. For example, a light emitting diode and at least one phosphor It can be made in combination. The characteristic of the specific light L emitted from the light source 100 will be described with reference to FIG. 2.

2 is a graph illustrating a spectrum of a specific light L of the light source 100 of the display device 1000 according to an exemplary embodiment. Specifically, in FIG. 2, an intensity spectrum of each wavelength band of the specific light L emitted from the light source 100 of the display device 1000 according to the exemplary embodiment is displayed.

2, the specific light L emitted from the light source 100 includes a plurality of peak wavelengths, and specifically, a red wavelength region (eg, 600 nm or more and 650 nm or less), a green wavelength region ( For example, 520 nm or more and 560 nm or less) and a peak wavelength in a blue wavelength range (for example, 430 nm or more and 480 nm or less) are included. The peak wavelength refers to a wavelength having a higher value than a region in which the intensity or intensity of light is different. That is, the specific light L of the light source 100 has a high intensity of red light, green light, and blue light, and the respective light is mixed to emit white light.

Accordingly, the color filter 471 that can be generated while the specific light L of the light source 100 passes through the color filter 471 of the liquid crystal panel 400 shown in FIG. 1, specifically, the red, green, and blue color filters. ) May be minimized, and thus it may be easy to implement high resolution or high color reproducibility of the display device 1000. The light source 100 may be manufactured using a light emitting diode and at least one phosphor, for example, a blue light emitting diode, a red phosphor, and a green phosphor.

As mentioned above, controlling the wavelengths of the light emitting diodes and the wavelengths of the phosphors, or the combination of colors with each other, the material limitations of the phosphors, may lead to the characteristics of the desired peak wavelength, in particular intensity or full width at Adjusting half maximum (FWHM) can be a difficult manufacturing problem. For this reason, as shown in FIG. 2, one half of the plurality of peak wavelengths, for example, the half width of the peak wavelength of the red light, may have a very narrow value compared with the half width of the other peak wavelengths. The full width at half maximum (FWHM) refers to the wavelength width at a point where the intensity becomes one half of the maximum intensity value of the peak wavelength.

Referring to FIG. 2, the specific light L has a peak wavelength (G-peak) at about 447 nm, which is a blue wavelength region, and the half-width (B-FWHM) of the peak wavelength has a value of about 20 nm. In addition, the specific light L has a peak wavelength (G-peak) at about 538 nm, which is a green wavelength region, and the half-width (G-FWHM) of the peak wavelength has a value of about 54 nm. In addition, the specific light L has a peak wavelength (R-peak) at about 631 nm, which is a red wavelength region, and the half-width (R-FWHM) of the corresponding peak wavelength is about 4 nm, and a peak wavelength (G-peak) of green light. Or relatively narrow compared to the peak wavelength (B-peak) of blue light. That is, the half-width (R-FWHM) of the peak wavelength of the red light has a value of 25% or less compared with the half-width (G-FWHM) of the peak wavelength of the green light or the half-width (B-FWHM) of the peak wavelength of the blue light. It can be seen that it is formed very narrow.

As described above, when the half width of the peak wavelength of the light has a relatively small value, a problem arises in that the viewing angle dependency such as the light shifts greatly or the intensity decreases according to the viewing angle facing the liquid crystal panel 400. Can be.

In the display device 1000 according to the exemplary embodiment of the present invention, even when the light source 100 that emits a specific light L including the peak wavelength having a narrow half-width as described above is applied due to manufacturing difficulties, By optimizing the insulating layer structure of 400, the viewing angle dependency can be minimized. This will be described with reference to FIG. 1 again.

Referring to FIG. 1, the liquid crystal panel 400 includes a first substrate 411, a thin film transistor 420, an insulating layer structure 430, an electrode unit 440, a liquid crystal layer 460, a black matrix 471, The color filter 472 and the second substrate 412 are included.

The first substrate 411 or the second substrate 412 of the liquid crystal panel 400 includes a pixel area (PA) and a non-pixel area (NPA). The pixel area PA refers to an area of a minimum unit where actual light is emitted, and distinguishes the pixel area PA between two adjacent pixel areas PA. In addition, the pixel area PA is an area in which light is emitted and may be referred to as an opening. The non-pixel area NPA is a region in which light is not emitted and may be referred to as a non-opening part. The pixel area PA may be referred to as a sub-pixel or a pixel. Although not shown in the drawings, the plurality of pixel areas PA may be a minimum group that represents white light. For example, three pixels may be one group, and each of the red pixels may be red. A pixel, a green pixel, and a blue pixel may form a group. In this case, a color filter 472 for converting the white light L of the light source 100 to each pixel is disposed in each pixel, and a red color filter, a green color filter, and a blue color filter are respectively disposed. Can be.

The first substrate 411 or the second substrate 412 may be made of an insulating material, and may be made of, for example, a flexible film made of glass or polyimide-based material.

The thin film transistor 420 is disposed on the non-pixel region NPA of the first substrate 411. The thin film transistor 420 supplies a signal to the electrode unit 440 driving the liquid crystal layer 460.

The thin film transistor 420 includes a gate electrode 421, an active layer 422, a source electrode 423, and a drain electrode 424. Referring to FIG. 1, a gate electrode 421 is formed on a first substrate 411, and a first insulating layer 431 covers the gate electrode 421. The active layer 422 is disposed on the first insulating layer 431 to overlap the gate electrode 421, and the source electrode 423 and the drain electrode 424 are spaced apart from each other on the active layer 422. do.

In the present specification, the overlapping of two objects may mean that at least a portion overlaps with each other regardless of the existence of another object in a vertical relationship between the two objects, and is also referred to by various other names. May be

The gate electrode 421, the source electrode 423, and the drain electrode 424 are made of a conductive material. For example, molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), and titanium ( One of Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or alloys thereof, but is not limited thereto, and may be formed of various materials.

The active layer 422 may be formed of any one of an oxide semiconductor, for example, InGaZnO, InGaO, or InSnZnO, but is not limited thereto.

At least one insulating layer formed between the first substrate 411 and the electrode unit 440 may be referred to as an insulating layer structure 430. Referring to FIG. 1, the insulating layer structure 430 may include at least one of the first insulating layer 431, the second insulating layer 432, or the third insulating layer 433.

The first insulating layer 431 is disposed on the gate electrode 421, and insulates the gate electrode 421 and the active layer 422, or the gate electrode 421, the source electrode 423, and the drain electrode 424. do. The first insulating layer 431 may be referred to as a gate insulating layer.

The second insulating layer 432 is a layer for protecting the thin film transistor 420 and is disposed to cover the source electrode 423 and the drain electrode 424. The second insulating layer 432 may be referred to as a passivation layer.

The first insulating layer 431 and the second insulating layer 432 may be composed of a single layer made of an inorganic material, for example, silicon nitride (SiN _x ). In FIG. 1, although the first insulating layer 431 and the second insulating layer 432 of the liquid crystal panel 400 are described as being made of a single layer, the present invention is not limited thereto. In other words, the first insulating layer 431 and the second insulating layer 432 may be formed of a plurality of layers.

If the first insulating layer 431 and the second insulating layer 432 are formed of a plurality of layers, for example, a double structure of silicon nitride (SiNx) and silicon oxide (SiO ₂ ) may be provided. In particular, in the case where the active layer 422 is made of an oxide semiconductor, due to the characteristics of the oxide semiconductor, due to the adsorption / desorption of oxygen (O ₂ ) in the air, the electrical characteristics are also increased depending on the hydrogen (H) supplied from the moisture. Can vary. In order to prevent the electrical characteristics of the oxide semiconductor from changing, silicon nitride (SiNx) having excellent barrier properties may be disposed. However, since silicon nitride (SiNx) may change the characteristics of the oxide semiconductor by hydrogen injected during the deposition process, silicon nitride (SiNx) may have a structure further including a silicon oxide film (SiO ₂ ). As described above, a detailed description of an embodiment in which the first insulating layer 431 and the second insulating layer 432 are formed of a plurality of layers will be described later with reference to FIGS. 6 to 9. The third insulating layer 433 is a layer having a flat upper surface and is disposed on the second insulating layer 432. The third insulating layer 433 may be composed of a single layer or a plurality of layers made of an organic material. For example, the third insulating layer 433 may be made of polyaluminum chloride (PAC), polyimide, or acryl. The third insulating layer 433 may be referred to as a planarization layer.

The second insulating layer 432 and the third insulating layer 433 include a contact portion exposing the drain electrode 424, and the electrode portion 440 and the thin film transistor 420 are electrically connected through the contact portion. Although not illustrated, the second insulating layer 432 and the third insulating layer 433 may include a contact portion exposing the source electrode 423 according to the type of the thin film transistor 420.

The insulating layer structure 430 of the display device 1000 according to the exemplary embodiment of the present invention includes at least one of the first insulating layer 431, the second insulating layer 432, and the third insulating layer 433. The insulating layer structure 430 is configured to be different from each other in the pixel area PA and the non-pixel area NPA, so that a specific light L including a peak wavelength having a narrow half width is supplied to the liquid crystal panel 400. The viewing angle dependence at can be minimized.

As mentioned above, when the specific light L of the light source 100 passes through the liquid crystal panel 400, the plurality of thin film layers of the liquid crystal panel 400, that is, the plurality of thin layers included in the insulating layer structure 430. The color separation phenomenon according to the viewing angle may be further increased by the difference in refractive index between the insulating layers. In particular, the color separation phenomenon according to the viewing angle may increase rapidly with light having a peak wavelength having a narrow half width. The color separation phenomenon is a phenomenon in which the transmittance of a specific light is oscillated and color is separated according to the viewing state. The color separation phenomenon may increase rapidly as the difference in refractive index between the thin film layers or the light having a narrow half width is increased. have. That is, among the plurality of peak wavelengths included in the specific light L of the light source 100 described with reference to FIG. 2, the red light having a narrow half-value width is compared with the blue light or green light having a relatively half-value width, and thus, the plurality of thin film layers. Transmittance fluctuation according to the viewing angle due to the difference in refractive index between them becomes larger. As a result, the color separation phenomenon of the red light is further increased, and the variation in the color reproducibility according to the viewing angle is also increased, which may cause a serious problem in that the display quality of the display device 1000 is degraded.

According to an embodiment of the present invention, the insulating layer structures of the pixel area PA and the non-pixel area NPA are configured differently, so that the variation in transmittance according to the viewing angle may be minimized even when red light having a narrow half width is passed. . In detail, the difference in refractive index between the plurality of insulating layers corresponding to the pixel area PA may be minimized so that variation in transmittance according to the viewing angle may be minimized even when red light passes. In other words, the insulating layer structure 430 of the pixel area PA may be formed of only an insulating layer made of a material that substantially matches the refractive index of the first substrate 411. The refractive index difference can be minimized. Here, the fact that the refractive indices of the two layers substantially coincide means that the difference in refractive indices between the materials constituting the two layers is substantially coincident, and specifically, when the difference in refractive indices between the two layers is 0.05 or less, It can be seen that the refractive indices of the layers are substantially coincident.

When the first substrate 411 is made of glass, the refractive index of the first substrate 411 is about 1.5, and when the first insulating layer 431 and the second insulating layer 432 are made of silicon nitride (SiNx), The refractive index of the first insulating layer 431 and the second insulating layer 431 is about 1.88. In addition, when the third insulating layer 433 is made of a photo acryl compound (PAC), the refractive index of the third insulating layer 433 is about 1.5. In this case, the red light having a narrow half width passes through the first substrate 411, the first insulating layer 431, the second insulating layer 432, and the third insulating layer 433 corresponding to the pixel area PA. When the refractive index difference between the first substrate 411 and the first insulating layer 431 and the refractive index difference between the second insulating layer 432 and the third insulating layer 433 is changed, the transmittance variation according to the viewing angle of red light This increasing problem can occur.

Therefore, as shown in FIG. 1, when the first insulating layer 431 and the second insulating layer 432 are removed from the pixel area PA, that is, the first insulating layer 431 and the second insulating layer are removed. When 432 is disposed only in the non-pixel area NPA and is configured not to extend to the pixel area PA, since there is almost no difference in refractive index between the insulating layers of the pixel area PA, red light having a narrow half width is the pixel area. Even if it passes through (PA), the transmittance variation according to the viewing angle can be minimized. Accordingly, the color separation phenomenon and the variation in color reproducibility according to the viewing angle are reduced, and the display quality of the display device 1000 may be reduced.

The electrode unit 440 for driving the liquid crystal layer 460 is disposed on the insulating layer structure 430. The electrode unit 440 includes a common electrode 441 and a pixel electrode 442 patterned on the common electrode 441, and a fourth insulating layer 450 between the common electrode 441 and the pixel electrode 442. ) May be arranged. In an exemplary embodiment, the pixel area PA and the non-pixel area NPA may be divided into the end Z of the common electrode 441, and the end of the common electrode 441 is the pixel area. It may be a boundary line Z that separates the PA from the non-pixel area NPA. However, the present invention is not limited thereto, and according to the design of the liquid crystal panel 400, the pixel area PA and the non-pixel area NPA may be divided by a boundary line between the black matrix 471 and the color filter 472. It may be distinguished only by the end of the black matrix 471. In addition, although the pixel electrode 442 is disposed on the common electrode 441 in the drawing, the common electrode 441 is disposed on the pixel electrode 442 or the common electrode 441 depending on the driving method of the liquid crystal layer 460. ) And the pixel electrode 442 may be disposed on the same plane.

Referring to FIG. 1, an end Y of the second insulating layer 432 is formed at an interface between the pixel area PA and the non-pixel area NPA than the end X of the first insulating layer 431. Z, or close to the end Z of the common electrode 441, that is, the second insulating layer 432 disposed in the non-pixel region NPA covers the side surface of the first insulating layer 431. Since the path through which external moisture (H ₂ O), hydrogen (H ₂ ), or the like penetrates through the interface between the layers becomes long, the thin film transistor 420 may be more effectively protected. However, the present invention is not necessarily limited thereto, and according to the manufacturing method, the first insulating layer 431 and the second insulating layer 432 are removed at the same time, whereby the end X and the second end of the first insulating layer 431 are removed. The end Y of the insulating layer 432 may be located on the same plane.

In FIG. 1, the thin film transistor 420 of the non-pixel area NPA of the first substrate 411 is illustrated as a staggered structure, but is not limited thereto, and may be formed as a coplanar structure. have. When the thin film transistor 420 has a coplanar structure, the thin film transistor 420 has a structure in which an active layer, a gate insulating layer, a gate electrode, an interlayer insulating layer, a source electrode, and a drain electrode are sequentially stacked. In this case, when the gate insulating layer and the interlayer insulating layer are made of a material different from the refractive index of the first substrate 411, the gate insulating layer and the interlayer insulating layer may not be extended to the pixel area PA. Accordingly, even if the red light having a narrow half width passes through the pixel area PA, the transmittance variation according to the viewing angle is reduced, thereby reducing the variation in color reproduction rate, thereby minimizing the problem of deterioration of the display quality of the display device 1000. Can be. The gate insulating layer or the interlayer insulating layer may be referred to as a first insulating layer.

An embodiment of the present invention is positioned in the non-pixel region NPA of the first substrate 411 and includes a gate electrode 421, an active layer 422, a source electrode 423, and a drain electrode 424. The thin film transistor 420 covers the first insulating layer 431 and the source electrode 423 and the drain electrode 424 that insulate the gate electrode 421, the source electrode 423, and the drain electrode 424. It may be regarded as including a second insulating layer 432. In this case, with respect to the first substrate 411, the first insulating layer 431 to minimize transmission oscillation according to a viewing angle that may occur while the specific light L of the light source 100 passes through the pixel area PA. ) And the second insulating layer 432 do not extend to the pixel area PA. Accordingly, the color separation phenomenon of the peak wavelength having a relatively narrow half-value width included in the specific light L of the light source 100 is prevented. The problem of minimizing the display quality of the display device 1000 may be improved.

3 is a cross-sectional view illustrating main components of the display device 1000 according to an exemplary embodiment. In detail, a stacked structure of an insulating layer structure 430 of a pixel area PA and a non-pixel area NPA is illustrated. Is a cross-sectional view comparing schematically.

Referring to FIG. 3, the insulating layer structure 430N of the non-pixel area NPA includes a first insulating layer 431, a second insulating layer 432, and a third insulating layer 433. In comparison, in the insulating layer structure 430P of the pixel area PA, the first insulating layer 431 and the second insulating layer 432 made of a material having a different refractive index from that of the first substrate 411 are removed. Only the third insulating layer 433 made of a material having substantially the same refractive index as the first substrate 411 is included. In this case, the first insulating layer 431 and the second insulating layer 432 may be formed of, for example, silicon nitride (SiNx).

That is, among the plurality of insulating layers disposed on the first substrate 411, the insulating layer made of a material different from the refractive index of the first substrate 411 is removed from the pixel area PA, thereby removing the pixel area PA. The number of insulating layers of the insulating layer structure 430P may be smaller than the number of insulating layer structures 430N of the non-pixel area NPA. Accordingly, since the difference in refractive index between the first substrate 411 or the insulating layer corresponding to the pixel area PA is eliminated, the transmittance fluctuation according to the viewing angle of the specific light L including the peak wavelength of narrow half-width is also reduced. Can be.

As described above with reference to FIGS. 1 to 3, in order to realize high resolution or high color reproducibility, the first peak wavelength (for example, the green peak wavelength or the blue peak wavelength) and the half width of the first peak wavelength are 25%. In the structure in which the specific light L including the second peak wavelength (for example, the red peak wavelength) having the following half width is supplied to the liquid crystal panel 400, the specific light L of the light source is the liquid crystal panel 400. The insulating layer of the pixel area PA such that the transmittance fluctuation according to the viewing angle that may occur while passing through the pixel area A of the X), specifically, the transmittance fluctuation of the light of the second peak wavelength (for example, red light) is minimized. The structure 430P and the insulating layer structure 430N of the non-pixel area NPA are configured differently. That is, only a layer made of a material substantially matching the refractive index of the first substrate 411 among the plurality of insulating layers included in the insulating layer structure 430 is disposed in the pixel area PA. In detail, the first insulating layer 431, which insulates the gate electrode 421, the source electrode 423, and the drain electrode 424 of the thin film transistor 420, and the source electrode 423 and the drain electrode 424 are separated from each other. The covering second insulating layer 432 does not extend to the pixel area PA. Accordingly, since the variation of the color reproducibility of the display apparatus 1000 according to the viewing angle is minimized, the problem of deterioration of display quality may be solved.

Figure 4a is a graph showing the change in transmittance according to the viewing angle when the structure of the comparative example is used. In FIG. 4, peak wavelengths are shown in the red wavelength region, the green wavelength region, and the blue wavelength region. In FIG. 4, specific light in which the half width of the peak wavelength in the red wavelength region is narrower than the half width of the peak wavelength in the other wavelength region is incident on the liquid crystal panel. The structure of the comparative example is a structure of a display device in which the insulating layer structure of the pixel region and the insulating layer structure of the non-pixel region have the same structure, and FIG. 4A shows red light (RED) and green when the above-described light is incident in this comparative example. Transmittance fluctuations according to viewing angles of the light GREEN and the blue light BLUE are shown. In other words, the first and second insulating layers described above with reference to FIGS. 1 to 3 are graphs showing variation in transmittance according to the viewing angle of the display device in which the non-pixel region and the pixel region are disposed.

Referring to FIG. 4A, in the case of blue light (BLUE), the maximum transmittance is about 79%, the minimum transmittance is about 70%, and the variation range is about 9% between the viewing angles of 0 degrees to 70 degrees. In addition, in the case of green light, the maximum transmittance is about 85%, the minimum transmittance is about 69%, and the variation range is about 16% between the viewing angles of 0 degrees to 70 degrees. By comparison, red light (RED) has a maximum transmittance of about 90%, a minimum transmittance of about 62%, and a fluctuation range of about 28% between 0 and 70 degrees of viewing angle. It can be seen that the variation of about 3.1 times and 1.75 times occurred more significantly than the red light. In addition, as shown in FIG. 4A, as the viewing angle is changed, it may be confirmed that the vibration of the height of the transmittance of the red light RED occurs several times compared to the blue light or the green light. .

In comparison, Figure 4b is a graph showing the transmittance variation according to the viewing angle when the structure of one embodiment of the present invention is used. Similarly to the structure of the comparative example, the incident light has a peak wavelength in the red wavelength region, the green wavelength region, and the blue wavelength region, and the half width of the peak wavelength in the red wavelength region is configured to be smaller than the half width of the peak wavelength in the other wavelength region. 4B illustrates red light RED, green light GREEN, and blue light BLUE when such specific light is incident on a display device in which the insulating layer structure of the pixel region and the insulating layer structure of the non-pixel region are different from each other. The change in transmittance according to the viewing angle of In other words, the first insulating layer and the second insulating layer described with reference to FIGS. 1 to 3 are disposed only in the non-pixel region, and are graphs showing variation in transmittance according to the viewing angle of the display device configured not to extend to the pixel region.

Referring to FIG. 4B, in the case of blue light (BLUE), the maximum transmittance is about 78%, the minimum transmittance is about 68%, and the variation range is about 10% between the viewing angles of 0 degrees to 70 degrees. In addition, in the case of green light, the maximum transmittance is about 82%, the minimum transmittance is about 69%, and the variation range is about 13% between the viewing angles of 0 degrees to 70 degrees. In the case of red light (RED), between 0 and 70 degrees of viewing angle, the maximum transmittance is about 85%, the minimum transmittance is 70%, and the fluctuation range is about 15%. That is, the transmission fluctuation ranges of the blue light BLUE, the green light GREEN, and the red light RED have similar values, and as shown in FIG. 4B, as the viewing angle is changed, the blue light BLUE or green color is changed. It can be seen that the vibration curves of the heights of the transmittances of the light GREEN and the red light RED also have a similar shape. In other words, in a display device in which the insulating layer structure of the pixel region and the insulating layer structure of the non-pixel region are different according to an embodiment of the present invention, the peak wavelength of the wavelength region in which the half width of the peak wavelength of the red wavelength region is different When a specific light configured to be narrower than the half width of the incident light enters the liquid crystal panel, it can be seen that the transmittance variation curves of the red wavelength region, the green wavelength region, and the blue wavelength region in the pixel region all have similar shapes.

Therefore, referring to FIGS. 4A and 4B, the first insulating layer and the second insulating layer of the display device according to the exemplary embodiment of the present invention are configured not to extend to the pixel region, thereby including a peak wavelength having a narrow half width. It can be seen that there is an effect of reducing transmittance fluctuation according to a viewing angle that can be generated while specific light passes through the pixel region.

The display device used in FIG. 5A has the structure of the comparative example described with reference to FIG. 4A. 5A is a graph illustrating color coordinate change Δu ′ according to a viewing angle of a display device in which the insulating layer structure of the pixel area and the insulating layer structure of the non-pixel area have the same structure. In a display device having a comparative example structure, white specific light having a peak wavelength in a red wavelength region, a green wavelength region, and a blue wavelength region, and having a half width of a peak wavelength of a red wavelength region narrower than a half width of a peak wavelength of another wavelength region, When supplied, as shown in Figure 5a, it can be seen that the color coordinate is greatly changed as the viewing angle is changed. That is, as described above, the color separation phenomenon according to the viewing angle of the specific light is increased by the refractive index difference between the plurality of thin film layers included in the insulating layer structure of the pixel region, so that the variation of the color coordinates may be greatly increased according to the change of the viewing angle. . As a result, the variation in color reproducibility according to the viewing angle is increased, which may lead to a problem in that display quality of the display device is degraded.

In comparison, the display device used in FIG. 5B has the structure of one embodiment of the present invention described with reference to FIG. 4B. 5B is a graph illustrating color coordinate change Δu ′ according to a viewing angle of a display device in which the first insulating layer and the second insulating layer are disposed only in the non-pixel region and are not extended to the pixel region. Similarly, in the display device of the embodiment structure, white specific having a peak wavelength in the red wavelength region, the green wavelength region, and the blue wavelength region, the half width of the peak wavelength of the red wavelength region being narrower than the half width of the peak wavelength of the other wavelength region. When light is supplied, referring to FIG. 5B, it can be seen that variation in color coordinates is reduced as the viewing angle is changed.

Accordingly, since the insulation layer structure of the pixel region and the insulation layer structure of the non-pixel region are different from each other, the variation of color coordinates according to the viewing angle that can occur while specific light passes through the pixel region is hardly generated. It can be seen that the fluctuation of? Is reduced and the display quality of the display device is improved.

Meanwhile, as described above, the first insulating layer and the second insulating layer of the liquid crystal panel may have a single layer made of silicon nitride (SiNx) having good barrier properties, but the first insulating layer may be used to improve the characteristics of the active layer. The second insulating layer may further include silicon oxide (SiO ₂ ) in addition to silicon nitride (SiNx).

As such, the first and second insulating layers including the plurality of layers will be described in more detail with reference to FIGS. 6 to 10.

Referring to FIG. 6, the display device 600 according to another exemplary embodiment of the present invention may include an active area AA displaying an image and an inactive area NAA disposed outside the active area AA without displaying an image. ).

A plurality of data lines DL and a plurality of gate lines GL are disposed in the active area AA, and the pixels P may be defined by the plurality of data lines DL and the plurality of gate lines GL. have. Each pixel P includes an opening OA configured to transmit light and a non-opening portion NOA adjacent to the opening OA and to which light is not transmitted.

The opening OA is a region in which the pixel electrode is disposed, and refers to a region in which the actual light is transmitted from the light source, and may correspond to the pixel region PA of FIG. 1. Accordingly, a detailed description of the opening OA will be omitted.

The non-opening portion NOA is a region in which the driving thin film transistor for driving the pixel electrode is disposed. The non-opening portion NOA is a region through which light is not transmitted and may correspond to the non-pixel region NPA of FIG. 1. Accordingly, a more detailed description of the non-opening portion NOA will be omitted.

The inactive region NAA is disposed adjacent to the active region AA, and a gate in panel (GIP) connected to the plurality of gate lines GL is disposed.

As such, the display device 600 according to another exemplary embodiment of the present invention is disposed in each of the non-opening portion NOA of the inactive region NAA and the active region AA and the opening OA of the active region AA. The structures of the insulating layer structure are arranged to be configured differently from each other. As a result, variations in color coordinates according to the viewing angles that may occur while specific light passes through the opening OA are hardly generated. Therefore, the variation in color reproducibility according to the viewing angle is reduced, and the display quality of the display device can be improved, and the oxide semiconductor is disposed in the non-active area NAA and the non-opening part NOA of the active area AA. The reliability of the display device can be improved by not changing the electrical characteristics of the active layer.

Such a structure of the active area AA and the inactive area NAA of the display device 600 according to another exemplary embodiment of the present invention will be described in detail with reference to FIGS. 7 to 9.

First, referring to FIG. 7, a thin film transistor is disposed in the non-opening portion NOA and the inactive region NAA of the active layer AA. The thin film transistor includes

gate electrodes

720G and 720N,

active layers

740G and 740N,

source electrodes

750G and 750N,

drain electrodes

760G and 760N, and an insulating film structure 730. In this case, since the configuration of the thin film transistor of FIG. 7 except for the insulating layer structure 730 is the same as the thin film transistor of FIG. 1, a detailed description thereof will be omitted. Meanwhile, reference numeral 770, which is not described, denotes an interlayer insulating layer for insulating the common electrode 791 and the pixel electrode 792 disposed in the opening OA, and reference numeral 780 denotes a third insulating layer of FIG. And a planarization layer. In addition, in FIG. 1, the third insulating layer is described as being included in the insulating layer structure, but in the configuration according to another exemplary embodiment, only the first insulating layer and the second insulating layer are included as the insulating layer structure.

The insulating layer structure 730 includes a plurality of first

sub insulating layers

731 and 734 and a plurality of second

sub insulating layers

732 and 733.

The plurality of first sub insulation layers 731 and 734 is disposed only over the non-opening portion NOA and the inactive region NAA of the active region AA. The plurality of first sub insulation layers 731 and 734 may be formed of silicon nitride (SiNx) having a first refractive index.

The plurality of first sub insulation layers 731 and 734 may include the gate electrode 720G of the inactive region NAA and the gate electrode 720N and the inactive region NAA of the non-opening portion NOA of the active region AA. The first insulating layer disposed between the active layer 740G and the active layer 740N of the non-opening portion NOA of the active region AA may be one of a plurality of sub insulating layers forming the gate insulating layer. The second insulating layer may be one of a plurality of sub insulating layers forming a second insulating layer, that is, a passivation layer, for protecting the thin film transistors disposed in the inactive region NAA and the non-opening portion NOA of the active region AA.

In particular, the plurality of first sub insulation layers 731 and 734 includes one first sub insulation layer 731 forming a gate insulation layer throughout the non-opening portion NOA and the non-active region NAA of the active region AA. ) And one non-opening portion NOA of the active region AA and one first sub insulation layer 734 forming a passivation layer over the entire inactive region NAA. That is, a plurality of first sub insulation layers 731 and 734 may be disposed in the non-opening portion NOA and the inactive region NAA of the active region AA. This is because the

active layers

740G and 740N according to the embodiment of the present invention are formed of an oxide semiconductor.

More specifically, since the electrical characteristics of the

oxide semiconductors

740G and 740N are changed by adsorption / desorption of oxygen (O ₂ ) in air or by hydrogen (H) supplied from moisture, silicon nitride having good barrier properties ( SiNx) is disposed above and below the

active layers

740G and 740N.

The plurality of first sub insulation layers 731 and 734 may not be disposed in the opening OA of the active region AA, but only one first sub insulation layer 731 may be disposed. That is, the first sub insulation layer 731 is disposed over the inactive region NAA and the entire active region AA, and the second sub insulation layer 734 is disposed in the opening OA of the active region AA. It may not be. This is because the opening OA of the active area AA is a region through which light is transmitted. Therefore, when a plurality of first sub insulation layers 731 and 734 having a higher refractive index than the second sub insulation layers 732 and 733 are disposed, a plurality of openings OA are provided. This is because an interface with a difference in refractive index may increase, and light reflection may occur between the first sub insulation layers 731 and 734, which may increase color variation and deteriorate display quality.

The plurality of second sub insulation layers 732 and 733 are disposed over the inactive region NAA and the active region AA. The plurality of second sub insulation layers 732 and 733 may be formed of silicon oxide (SiO ₂ ) having a second refractive index lower than the first refractive index. The difference in refractive index is substantially coincident between the third insulating layer 780 and the plurality of second

sub insulating layers

732 and 733, so that the transmittance variation according to the viewing angle may be minimized even when red light is passed.

The second sub insulation layer 732 may be disposed between the gate electrode 720G and the active layer 740G of the inactive region NAA, and the gate electrode 720N of the non-opening portion NOA of the active region AA. The first insulating layer disposed between the active layers 740N, that is, the sub insulating layer constituting the gate insulating layer may be one of the plurality of sub insulating layers. In addition, the second sub insulation layer 733 includes a plurality of second insulation layers, that is, passivation layers, for protecting the thin film transistors disposed in the inactive regions NAA and the non-opening portions NOA of the active regions AA. It may be one of the sub insulation layers.

In addition, the plurality of second sub insulation layers 732 and 733 may be configured not to be disposed in the opening OA of the active area AA, as in the above-described embodiment. The substrate 710 may be disposed in the entirety of the substrate 710 including the opening OA. Silicon nitride (SiNx) constituting the first sub insulation layers 731 and 734 is generally deposited by PECVD. As described above, hydrogen (H) may be injected during the deposition process. When hydrogen (H) is injected, the electrical characteristics of the

active layers

740G and 740N made of oxide semiconductors may be deteriorated, so to prevent this, the

active layers

740G and 740N are based on the

active layers

740G and 740N. Second sub insulation layers 732 and 733 are interposed between the first sub insulation layers 731 and 734. Meanwhile, a part of the second sub insulation layer 733 may be partially removed when the first sub insulation layer 734 is removed from the opening OA.

In addition, since the second plurality of sub insulation layers 732 and 733 have refractive indices that match those of the substrate 710 and the third insulation layer 780, the display apparatus may be disposed even in the opening OA of the active region AA. The influence on the display quality of 600 may not be large.

In the embodiment of FIG. 7, only one first sub insulation layer 731 constituting the gate insulation layer is disposed in the opening OA of the active region AA. Meanwhile, in the embodiment of FIG. 8, only the first sub insulation layer 734 forming the passivation layer is disposed in the opening OA of the active region AA among the plurality of first sub insulation layers 731 and 734. to be.

That is, referring to FIG. 8, the first sub insulation layer 731 ′ forming the first insulation layer among the plurality of first sub insulation layers 731 ′ and 734 ′ may be formed in the opening OA of the active region AA. The first sub insulation layer 734 'constituting the second insulation layer is also disposed in the opening OA of the active region AA.

As described above, the plurality of first sub insulating layers 731 'and 734' are disposed in the non-opening portion NOA of the inactive region NAA and the active region AA, and the opening of the active region AA is formed. Only one first sub insulation layer 731 'or 734' 'of the plurality of first sub insulation layers 731' and 734 'is disposed in the OA. Accordingly, an interface having a difference in refractive index between the material of the first sub insulation layers 731 ′ and 734 ′ and the second sub insulation layers 732 and 734 ′, the substrate 710, and the third insulation layer 780. The decrease in display quality of the display device 600 can be minimized.

In addition, a plurality of second sub insulation layers 732 and 733 are disposed on the entire inactive region NAA and the active region AA so as to form the first sub insulation layers 731 'and 734'. Deterioration of electrical characteristics of the

active layers

740G and 740N may be minimized.

Next, referring to FIG. 9, in comparison with FIGS. 7 and 8, only a plurality of second sub insulation layers 732 and 733 are disposed in the opening OA of the active area AA.

As shown in FIG. 9, when only a plurality of second sub insulation layers 732 and 733 are disposed in the opening OA of the active region AA, the first sub insulation layers 731 ′ and 734 having high refractive indexes are formed. It is not disposed in the opening OA of the active area AA. Accordingly, an interface having a difference in refractive index between the substrate 710, the second sub insulation layers 732 and 733, and the third insulation layer 780 may be minimized, thereby further improving display characteristics.

7 to 9, the first sub insulation layers 731 and 734 are removed only from the opening OA of the active region AA among the active region AA and the inactive region NAA on the substrate 710. Although not limited, it may be performed by dry etching using a mask.

In this case, the layers to be removed among the plurality of first sub insulation layers 731 and 734 are not removed at the end of the non-opening portion NOA of the active region AA, but between the non-opening portion NOA and the opening OA. It may be arranged to extend further into the opening OA beyond the boundary. In this case, the lengths of the first sub insulation layers 731 and 734, which may further extend into the opening OA, may be determined based on the color coordinate values of the pixel P. That is, as long as the color coordinate value of the pixel P is within a required range, a part of the first sub insulation layers 731 and 734 may extend into the opening OA. As a result, the color coordinate of the pixel P can be satisfied and the reliability of the oxide semiconductor can be further improved.

10A and 10B are graphs showing changes in color coordinates according to viewing angles of a comparative example and another embodiment of the present invention.

In the display device used in FIG. 10A, a plurality of first sub insulation layers are also disposed in the opening OA of the active area AA. That is, FIG. 10A illustrates a structure in which an insulating layer structure disposed in the opening portion OA of the active region AA and an inactive region NAA and an insulating layer structure disposed in the non-opening portion NOA of the active region AA have the same structure. It is a graph which shows the change of the color coordinate according to the viewing angle of the display device which has. In a display device having a comparative example structure, white specific light having a peak wavelength in a red wavelength region, a green wavelength region, and a blue wavelength region, and having a half width of a peak wavelength of a red wavelength region narrower than a half width of a peak wavelength of another wavelength region, When supplied, as shown in Figure 10a, it can be seen that the color coordinate is greatly changed as the viewing angle is changed. That is, as described above, the color separation phenomenon according to the viewing angle of the specific light is increased due to the difference in refractive index between the plurality of thin film layers included in the insulating layer structure of the opening OA of the active area AA. It can be seen that the fluctuation is also large. As a result, the variation in color reproducibility according to the viewing angle is increased, which may lead to a problem in that display quality of the display device is degraded.

Meanwhile, the display device used in FIG. 10B has the structure of FIG. 7. FIG. 10B illustrates that the insulating layer structure disposed in the inactive region NAA and the non-opening portion NOA of the active region AA and the insulating layer structure of the opening OA of the active region AA are different from each other. A graph showing a change in color coordinates according to the viewing angle of the display device. Similarly, in the display device of the embodiment structure, white specific having a peak wavelength in the red wavelength region, the green wavelength region, and the blue wavelength region, the half width of the peak wavelength of the red wavelength region being narrower than the half width of the peak wavelength of the other wavelength region. When light is supplied, referring to FIG. 10B, it can be seen that variation in color coordinates is reduced as the viewing angle is changed.

Accordingly, as shown in FIGS. 7 through 9, in the display device according to another exemplary embodiment, the plurality of first sub insulation layers 731 may be disposed in the non-opening portion NOA of the inactive region NAA and the active region AA. , 734 and the plurality of second

sub insulating layers

732 and 733 are all disposed, and only the plurality of second

sub insulating layers

732 and 733 are disposed in the opening OA of the active area AA, or one Only one

sub insulation layer

731 or 734 is configured to be further disposed. As a result, the number of interfaces having the difference in the refractive indices of the openings OA of the active layer AA is minimized so that variations in color coordinates hardly occur, thereby improving display quality of the display device and protecting characteristics and reliability of the oxide semiconductor. can do.

In addition, the display device 600 according to another exemplary embodiment of the present invention may include a plurality of first subs in the inactive area NAA where the

active layers

740G and 740N are disposed and the non-opening part NOA of the active area AA. Since the insulating

layers

731 and 734 are configured such that the

active layers

740G and 740N are disposed up and down, the electrical characteristics of the

active layers

740G and 740N may be minimized to reduce the reliability of the display device.

In addition, the display device 600 according to another exemplary embodiment of the present invention may include the

active layers

740G and 740N and the active layers 740G, which are disposed in the non-opening portion NOA of the inactive region NAA and the active region AA. The plurality of first sub insulation layers 731 and 734 are interposed between the plurality of first sub insulation layers 731 and 734 disposed above and below 740N. It is possible to minimize the occurrence of defects in the

active layers

740G and 740N that may occur during the deposition process.

As described above, in a display device in which specific light including a plurality of peak wavelengths is supplied to a liquid crystal panel for high resolution, when the half width of the peak wavelength FWHM of one of the plurality of peak wavelengths is narrow, By differently configuring the insulating layer structure and the insulating layer structure of the non-pixel region, the transmittance variation and the color coordinate variation according to the viewing angle of the light of the peak wavelength having a relatively narrow half width can be minimized. As a result, variations in color reproducibility of the display device according to the viewing angle may be minimized, thereby improving display quality of the display device.

The number of insulating layers of the insulating layer structure of the pixel area may be less than the number of insulating layers of the insulating layer structure of the non-pixel area.

The insulating layer structure of the pixel area may include at least one layer made of a material substantially matching the refractive index of the substrate among the first insulating layer, the second insulating layer, and the third insulating layer.

The electrode unit may include a common electrode and a pixel electrode patterned on the common electrode, and an end of the common electrode may define a boundary line separating the pixel area and the non-pixel area.

An end of the second insulating layer of the insulating layer structure of the non-pixel region may be located closer to the end of the common electrode than the end of the first insulating layer.

An end of the second insulating layer and an end of the first insulating layer of the insulating layer structure of the non-pixel region may be positioned on the same plane.

The transmittance variation curve according to the viewing angle of the light of the first peak wavelength in the pixel region and the transmittance variation curve according to the viewing angle of the light of the second peak wavelength may have a similar shape.

The second insulating layer of the insulating layer structure in the non-pixel region may be configured to cover the side surface of the first insulating layer.

The first insulation layer is a gate insulation layer or an interlayer insulation layer, the second insulation layer is a passivation layer, the third insulation layer is a planarization layer, and the second insulation layer and the third insulation layer are formed with the electrode portion. It may include a contact unit for connecting the thin film transistor.

The first peak wavelength may be 430 nm or more and 480 nm or less, or 520 nm or more and 560 nm or less, and the second peak wavelength may be 600 nm or more and 650 nm or less.

The specific light of the light source may include a first peak wavelength and a second peak wavelength having a half width of 25% or less compared with the half width of the first peak wavelength.

The second insulating layer may be configured to cover side surfaces of the first insulating layer.

According to another exemplary embodiment, a display device includes an active region including an opening configured to transmit light and a non-opening portion adjacent to the opening and not transmitting the light, and an inactive region adjacent to the active region and having a gate-in panel disposed thereon. A substrate, a first sub insulation layer having a first refractive index disposed in a non-opening portion and an inactive region of an active region, and a second refractive index disposed in the entire active region and the inactive region, and having a second refractive index lower than the first refractive index. And a sub insulation layer.

A first insulating layer which insulates the active electrode and the gate electrode disposed in the non-opening driving thin film transistor and the gate in panel of the inactive region, and the source of the driving thin film transistor of the non-opening portion and the gate in panel of the inactive region A second insulating layer is disposed on the electrode and the drain electrode, and the active layer may be formed of an oxide semiconductor.

The first insulating layer may include a plurality of sub insulating layers, the first sub insulating layer may be one of the first insulating layers, and the first sub insulating layer may be formed of silicon nitride (SiNx).

The second insulating layer may be formed of a plurality of sub insulating layers, the first sub insulating layer may be one of the second insulating layers, and the first sub insulating layer may be formed of silicon nitride (SiNx).

The second sub insulating layer may be one of a plurality of sub insulating layers forming the first insulating layer or a plurality of sub insulating layers forming the second insulating layer, and the second sub insulating layer may be made of silicon oxide (SiO 2).

The first sub insulation layer further extends into the opening beyond the boundary between the non-opening portion and the opening of the active region, and the length of the first sub insulation layer further extending into the opening is the opening and the non-opening portion. It may be determined based on the color coordinate value of the configured sub-pixel.

Although the embodiments of the present invention have been described in more detail with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments, and various modifications can be made without departing from the spirit of the present invention. . Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention but to describe the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive. The protection scope of the present invention should be interpreted by the claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

Claims

A liquid crystal panel including a pixel region and a non-pixel region; And

The liquid crystal panel includes a light source for supplying a specific light including a first peak wavelength and a second peak wavelength having a half peak width of 25% or less compared to the half peak width of the first peak wavelength,

The liquid crystal panel,

A thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode on a non-pixel region of the substrate;

A first insulating layer insulating the gate electrode, the source electrode and the drain electrode of the thin film transistor, a second insulating layer covering the source electrode and the drain electrode of the thin film transistor, and a third insulating layer having a flat upper surface on the second insulating layer An insulating layer structure comprising at least one of the layers; And

An electrode part for driving the liquid crystal layer on the insulating layer structure,

And an insulation layer structure of the pixel region and an insulation layer structure of the non-pixel region are different from each other so that transmission oscillation according to a viewing angle that may occur while specific light of the light source passes through the pixel region is minimized.
The method of claim 1,

And a number of insulating layers of the insulating layer structure of the pixel area is less than that of the insulating layer structure of the non-pixel area.
The method of claim 2,

The insulating layer structure of the pixel area is formed of at least one layer of the first insulating layer, the second insulating layer and the third insulating layer made of a material substantially matching the refractive index of the substrate.
The method of claim 3,

And the electrode portion includes a common electrode and a pixel electrode patterned on the common electrode, and an end of the common electrode defines a boundary line separating the pixel area and the non-pixel area.
The method of claim 4, wherein

The end of the second insulating layer of the insulating layer structure of the non-pixel region is positioned closer to the end of the common electrode than the end of the first insulating layer.
The method of claim 4, wherein

The end of the second insulating layer and the end of the first insulating layer of the insulating layer structure of the non-pixel region are located on the same plane.
The method of claim 3,

And a transmittance variation curve according to a viewing angle of light of the first peak wavelength in the pixel region and a transmittance variation curve according to a viewing angle of light of the second peak wavelength in a similar form.
The method of claim 3,

And a second insulating layer of the insulating layer structure of the non-pixel region is configured to cover side surfaces of the first insulating layer.
The method of claim 3,

The first insulation layer is a gate insulation layer or an interlayer insulation layer, the second insulation layer is a passivation layer, the third insulation layer is a planarization layer, and the second insulation layer and the third insulation layer are the electrode portions. And a contact unit connecting the thin film transistor.
The method of claim 3,

The said 1st peak wavelength is 430 nm or more and 480 nm or less, 520 nm or more and 560 nm or less, and said 2nd peak wavelength is 600 nm or more and 650 nm or less.
In a thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode in a non-pixel region of a substrate,

A first insulating layer insulating the gate electrode, the source electrode and the drain electrode; And

A second insulating layer covering the source electrode and the drain electrode;

With respect to the substrate, the first insulating layer and the second insulating layer are configured not to extend to the pixel region so that transmission oscillation according to a viewing angle that may occur while specific light of a light source passes through the pixel region is minimized. Thin film transistor.
The method of claim 11,

The specific light of the light source includes a first peak wavelength and a second peak wavelength having a half width of 25% or less compared with the half width of the first peak wavelength.
The method of claim 12,

The first peak wavelength is 430 nm or more and 480 nm or less, or 520 nm or more and 560 nm or less, and the second peak wavelength is 600 nm or more and 650 nm or less.
The method of claim 11,

And the second insulating layer is configured to cover side surfaces of the first insulating layer.
A substrate having an active region including an opening configured to transmit light and a non-opening portion adjacent to the opening and configured to not transmit light, and a non-active region adjacent to the active region and having a gate-in panel disposed thereon;

A first sub insulation layer having a first refractive index disposed only in the non-opening portion and the inactive region of the active region; And

Disposed throughout the active region and the inactive region,
The method of claim 15,

A first insulating layer for insulating the driving thin film transistor of the non-opening part, the gate electrode disposed in the gate-in panel of the inactive region, and the active layer; And

And a second insulating layer disposed on the driving thin film transistor of the non-opening part and the source electrode and the drain electrode disposed on the gate-in panel of the inactive region.

The active layer is made of an oxide semiconductor.
The method of claim 16,

The first insulating layer is composed of a plurality of sub insulating layers,

The first sub insulation layer is one of a plurality of sub insulation layers of the first insulation layer.

The first sub insulation layer is made of silicon nitride (SiNx).
The method of claim 17,

The second insulating layer is composed of a plurality of sub insulating layers,

The first sub insulation layer is one of a plurality of sub insulation layers of the second insulation layer.

The first sub insulation layer is made of silicon nitride (SiNx).
The method of claim 17 or 18,

The second sub insulation layer is one of a plurality of sub insulation layers constituting the first insulation layer or one of a plurality of sub insulation layers constituting the second insulation layer.

The second sub insulation layer is made of silicon oxide (SiO 2 ).
The method of claim 15,

The first sub insulating layer further extends into the opening beyond a boundary between the non-opening portion and the opening of the active region, and the length of the first sub insulating layer further extending into the opening is the opening and the non-opening portion. The display device determined based on the color coordinate value of the pixel comprised.