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WO2017034122A1 - Transistor en couches minces et dispositif d'affichage - Google Patents

Transistor en couches minces et dispositif d'affichage Download PDF

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Publication number
WO2017034122A1
WO2017034122A1 PCT/KR2016/005357 KR2016005357W WO2017034122A1 WO 2017034122 A1 WO2017034122 A1 WO 2017034122A1 KR 2016005357 W KR2016005357 W KR 2016005357W WO 2017034122 A1 WO2017034122 A1 WO 2017034122A1
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WO
WIPO (PCT)
Prior art keywords
insulating layer
light
layer
region
electrode
Prior art date
Application number
PCT/KR2016/005357
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English (en)
Korean (ko)
Inventor
이상걸
유상희
김광태
유연택
김남수
조석호
최훈
신현진
임화춘
Original Assignee
엘지디스플레이 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from KR1020160053556A external-priority patent/KR102563157B1/ko
Application filed by 엘지디스플레이 주식회사 filed Critical 엘지디스플레이 주식회사
Priority to US15/755,458 priority Critical patent/US10840274B2/en
Publication of WO2017034122A1 publication Critical patent/WO2017034122A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Definitions

  • the present invention relates to a thin film transistor and a display device, and more particularly, to an insulating layer configured in a pixel region of a liquid crystal panel in a structure in which specific light including a plurality of peak wavelengths is supplied to a liquid crystal panel for high resolution.
  • a display apparatus is an apparatus for displaying an image, and is used in various apparatuses such as televisions, mobile devices, laptops, vehicles, watches, and the like.
  • a liquid crystal display apparatus is driven by an image realization principle based on optical anisotropy and polarization of liquid crystals.
  • a liquid crystal display device is an essential component of a liquid crystal panel bonded through a liquid crystal layer between two substrates, and creates an electric field in the liquid crystal panel to change the arrangement direction of liquid crystal molecules to realize a difference in transmittance. do.
  • the liquid crystal panel does not have a self-luminous element, in order to display the difference in transmittance as an image, a separate light source for emitting white light is required.
  • a light source of the liquid crystal display a cold cathode fluorescent lamp (CCFL), an external electrode fluorescent lamp (EEFL), a light emitting diode (LED), or the like may be used.
  • CCFL cold cathode fluorescent lamp
  • EEFL external electrode fluorescent lamp
  • LED light emitting diode
  • light emitting diodes have advantages of small size, low power consumption, high reliability, and the like, they are widely used as light sources of liquid crystal displays.
  • the light source of the liquid crystal display including the light emitting diode is generally made of a blue light emitting diode and a yellow phosphor. More specifically, a part of the blue light emitted from the blue light emitting diode is absorbed by the yellow phosphor and converted into yellow light, and the yellow light converted by the yellow phosphor and the remaining blue light not absorbed by the phosphor are mixed with each other, whereby white light Is implemented.
  • the white light may include a blue peak wavelength and a yellow peak wavelength.
  • the white light incident on the liquid crystal panel passes through the red, green, and blue color filters, and is implemented as pixels of red, green, and blue, respectively.
  • Peak wavelength refers to a wavelength in which the intensity or intensity of light has a higher value than that of other wavelengths in a specific wavelength range. Accordingly, the white light composed of the blue peak wavelength and the yellow peak wavelength may have a higher intensity or intensity than the blue light and the yellow light.
  • the white light since the white light has a high intensity in the blue wavelength region, that is, because the intensity or intensity of the blue light is high, the light loss by the blue color filter when the white light passes through the blue color filter can be minimized. Can be.
  • white light has a relatively high intensity even in the wavelength region of yellow, that is, red or green light has a lower intensity or intensity than yellow light
  • white light is a red color filter or a green color filter.
  • Light loss may occur when passing through.
  • the red color filter or the green color filter only passes the light in the wavelength range corresponding to each other, so that high intensity yellow light is blocked by the red or green color filter, and only low intensity red or green light passes. Can be. Therefore, since the light efficiency of the red or green pixels is lowered, it may be difficult to implement high resolution or high color reproducibility of the display device.
  • the inventors of the present invention when the white light of the light source has a peak wavelength in the wavelength region corresponding to each color filter, the light loss by the color filter is minimized to facilitate the high resolution or high color reproducibility of the display device Recognized. That is, when white light has high intensity in all of the red wavelength region, the green wavelength region, and the blue wavelength region, light loss by the color filters of red, green, and blue can be minimized.
  • the inventors of the present invention have fabricated a light source that emits white light having a uniformly high intensity at peak wavelengths of red, green and blue using a blue light emitting diode, a red phosphor and a green phosphor.
  • the inventors of the present invention are difficult to control the wavelengths of the blue light emitting diodes, the wavelengths of the red phosphors, and the wavelengths of the green phosphors, or to combine colors with each other. It is recognized that implementing the characteristics of the wavelength is a difficult problem.
  • the inventors of the present invention recognized that adjusting the intensity or full width at half maximum (FWHM) of each peak wavelength to a desired value is a difficult manufacturing problem.
  • FWHM full width at half maximum
  • the half width of red light may be reduced due to material limitations of a light emitting diode or a phosphor. It may have a value that is much smaller than the half width of the green light or the blue light.
  • the half width of the light becomes small, a problem may arise in that the viewing angle dependence such as the light is greatly shifted or the intensity is decreased depending on the viewing angle of the liquid crystal panel.
  • the liquid crystal panel has a structure including a plurality of thin film layers such as a metal layer or an insulating layer.
  • the refractive index difference between the thin film layers is different.
  • the color separation phenomenon of the red light according to the viewing angle may be further increased.
  • the color separation phenomenon is a phenomenon in which the transmittance of a specific light is oscillated and color is separated according to the viewing state.
  • the color separation phenomenon may increase rapidly as the difference in refractive index between the thin film layers or the light having a narrow half width is increased. have.
  • the transmittance fluctuation according to the viewing angle due to the difference in refractive index between the thin film layers is further increased, compared to the blue light or green light having a relatively half full width, and thus the variation in color reproduction according to the viewing angle is increased. As a result, the display quality of the display device may be degraded.
  • the inventors of the present invention recognize the above-mentioned problems and have a structure in which white light including all of the characteristic of light required for high resolution, for example, peak wavelengths of red, green, and blue is supplied to the liquid crystal panel.
  • a new thin film transistor and display device having an improved display quality deterioration depending on a viewing angle, even when the half width of one of the red, green, and blue peak wavelengths is very narrow due to the material limitation of the phosphor.
  • a half width of one peak wavelength of one peak wavelength in a structure in which white light including a plurality of peak wavelengths is supplied to a liquid crystal panel In the case of having a value that is much smaller than the half width of the other peak wavelengths, the thin film transistor and the display device are improved by optimizing the insulating layer structure formed in the pixel region of the liquid crystal panel, whereby the transmittance and color reproducibility are varied depending on the viewing angle. will be.
  • a display device includes a liquid crystal panel including a pixel area and a non-pixel area, and a light source for supplying specific light to the liquid crystal panel.
  • the specific light includes a first peak wavelength and a second peak wavelength having a half width of 25% or less compared with the half width of the first peak wavelength.
  • the liquid crystal panel includes a thin film transistor including a gate electrode, an active layer, a source electrode and a drain electrode on a non-pixel region of a substrate, a first insulating layer insulating the gate electrode, the source electrode, and the drain electrode of the thin film transistor;
  • An insulating layer structure including at least one of a second insulating layer covering a source electrode and a drain electrode of the thin film transistor, a third insulating layer having a flat top surface on the second insulating layer, and the liquid crystal layer on the insulating layer structure It includes an electrode unit for driving.
  • the insulation layer structure of the pixel region and the insulation layer of the non-pixel region are minimized so that transmittance oscillation according to a viewing angle that may occur while specific light of the light source passes through the pixel region is minimized.
  • the structures are constructed differently. Accordingly, the variation of the color reproducibility of the display device according to the viewing angle may be minimized, thereby reducing the display quality of the display device.
  • a thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode in a non-pixel region of a substrate may include a first insulating layer that insulates the gate electrode, the source electrode, and the drain electrode.
  • the first insulating layer and the second insulating layer may be provided with respect to the substrate such that transmittance oscillation is minimized according to a viewing angle that may occur while specific light of a light source passes through the pixel region. And does not extend to the pixel region.
  • a display device includes an active region including an opening configured to transmit light and a non-opening portion adjacent to the opening and not transmitting the light, and an inactive region in which the gate-in panel is disposed adjacent to the active region.
  • a first sub insulation layer having a first refractive index disposed in the non-opening portion and the inactive region of the active region, and a second refractive index disposed in the entire active region and the non-active region and having a lower refractive index than the first refractive index.
  • a second sub insulation layer Accordingly, the display device according to another embodiment of the present invention can minimize the deterioration of electrical characteristics that can be caused by the defect of the active layer made of the oxide semiconductor, and can improve the display quality of the display device.
  • the variation of the color reproducibility of the display device according to the viewing angle may be minimized, thereby reducing the display quality of the display device.
  • FIG. 1 is a cross-sectional view and an enlarged view of a display device according to an exemplary embodiment of the present invention.
  • FIG. 2 is a graph showing a spectrum of specific light of a light source according to an embodiment of the present invention.
  • FIG 3 is a cross-sectional view illustrating main components of a display device according to an exemplary embodiment of the present invention.
  • 4A and 4B are graphs illustrating variation in transmittance according to viewing angles of a comparative example and an embodiment of the present invention.
  • 5A and 5B are graphs illustrating changes in color coordinates according to viewing angles of a comparative example and an embodiment of the present invention.
  • FIG. 6 is a plan view illustrating a display device according to another exemplary embodiment of the present invention.
  • FIG. 7 through 9 are cross-sectional views of display devices of various exemplary embodiments taken along the line of FIG.
  • 10A and 10B are graphs illustrating a change in color coordinates according to a viewing angle according to a comparative example and another embodiment of the present invention.
  • Shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are exemplary, and the present invention is not limited to the illustrated items. Like reference numerals refer to like elements throughout. In addition, in describing the present invention, if it is determined that the detailed description of the related known technology may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.
  • temporal after-term relationship for example, if the temporal after-term relationship is described as 'after', 'following', 'after', 'before', or the like, 'directly' or 'direct' This may include cases that are not continuous unless used.
  • the first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are only used to distinguish one component from another. Therefore, the first component mentioned below may be a second component within the technical spirit of the present invention.
  • each of the various embodiments of the invention may be combined or combined with one another, in whole or in part, and various interlocking and driving technically may be possible, and each of the embodiments may be independently implemented with respect to each other or may be implemented in association with each other. It may be.
  • the display device 1000 includes a light source 100, a light guide plate 200, an optical sheet 300, and a liquid crystal panel 400.
  • the liquid crystal panel 400 has a structure in which a liquid crystal layer 460 is interposed between two substrates 411 and 412 as a component for displaying an image of the display device 1000.
  • the liquid crystal panel 400 uses a principle in which an arrangement direction of liquid crystal molecules of the liquid crystal layer 460 is changed by an electric field applied between two electrodes 441 and 442, and the light source 100 passing through the light guide plate 200.
  • the amount of light transmitted according to the arrangement direction of the liquid crystal molecules of the liquid crystal layer 460 may be adjusted to express a desired image.
  • the light L of the light source 100 incident on the liquid crystal panel 400 passes through the color filters 472 of the liquid crystal panel 400, for example, red, green, and blue color filters, respectively. And a blue pixel.
  • the liquid crystal layer 460 may be arranged vertically or horizontally according to the driving mode.
  • the light guide plate 200 is disposed under the liquid crystal panel 400, and the light L of the light source 100 incident to the side surface of the light guide plate 200 is dispersed to the entire upper surface of the light guide plate 200, thereby displacing the liquid crystal panel 400. Is supplied.
  • the light guide plate 200 may be made of a transparent material, and for example, polyolefine, polystyrene, polymethyl methacrylate (PMMA), polycarbonate (PC), silicon rubber, glass ( glass).
  • the optical sheet 300 is disposed between the liquid crystal panel 400 and the light guide plate 200 and is a layer for increasing the efficiency or luminance of the light L incident on the liquid crystal panel 400.
  • the optical sheet 300 may include, for example, a prism sheet or a diffuser sheet.
  • the prism sheet serves to increase the luminance of the light L incident on the liquid crystal panel 400 by refracting or condensing the light L emitted to the upper surface of the light guide plate 200 through the prism-shaped layer.
  • the diffusion sheet evenly spreads the light L emitted to the upper surface of the light guide plate 200 to make the brightness of the light L uniform.
  • the light source 100 is disposed at a side surface of the light guide plate 200, and the light L emitted from the light source 100 passes through the light guide plate 200 and the optical sheet 300. Supplied to 400.
  • the light source 100 of the display device 1000 according to the exemplary embodiment of the present invention has a structure that emits white light including a plurality of peak wavelengths. For example, a light emitting diode and at least one phosphor It can be made in combination. The characteristic of the specific light L emitted from the light source 100 will be described with reference to FIG. 2.
  • FIG. 2 is a graph illustrating a spectrum of a specific light L of the light source 100 of the display device 1000 according to an exemplary embodiment. Specifically, in FIG. 2, an intensity spectrum of each wavelength band of the specific light L emitted from the light source 100 of the display device 1000 according to the exemplary embodiment is displayed.
  • the specific light L emitted from the light source 100 includes a plurality of peak wavelengths, and specifically, a red wavelength region (eg, 600 nm or more and 650 nm or less), a green wavelength region ( For example, 520 nm or more and 560 nm or less) and a peak wavelength in a blue wavelength range (for example, 430 nm or more and 480 nm or less) are included.
  • the peak wavelength refers to a wavelength having a higher value than a region in which the intensity or intensity of light is different. That is, the specific light L of the light source 100 has a high intensity of red light, green light, and blue light, and the respective light is mixed to emit white light.
  • the color filter 471 that can be generated while the specific light L of the light source 100 passes through the color filter 471 of the liquid crystal panel 400 shown in FIG. 1, specifically, the red, green, and blue color filters. ) May be minimized, and thus it may be easy to implement high resolution or high color reproducibility of the display device 1000.
  • the light source 100 may be manufactured using a light emitting diode and at least one phosphor, for example, a blue light emitting diode, a red phosphor, and a green phosphor.
  • FWHM full width at Adjusting half maximum
  • the specific light L has a peak wavelength (G-peak) at about 447 nm, which is a blue wavelength region, and the half-width (B-FWHM) of the peak wavelength has a value of about 20 nm.
  • the specific light L has a peak wavelength (G-peak) at about 538 nm, which is a green wavelength region, and the half-width (G-FWHM) of the peak wavelength has a value of about 54 nm.
  • the specific light L has a peak wavelength (R-peak) at about 631 nm, which is a red wavelength region, and the half-width (R-FWHM) of the corresponding peak wavelength is about 4 nm, and a peak wavelength (G-peak) of green light. Or relatively narrow compared to the peak wavelength (B-peak) of blue light. That is, the half-width (R-FWHM) of the peak wavelength of the red light has a value of 25% or less compared with the half-width (G-FWHM) of the peak wavelength of the green light or the half-width (B-FWHM) of the peak wavelength of the blue light. It can be seen that it is formed very narrow.
  • the display device 1000 even when the light source 100 that emits a specific light L including the peak wavelength having a narrow half-width as described above is applied due to manufacturing difficulties, By optimizing the insulating layer structure of 400, the viewing angle dependency can be minimized. This will be described with reference to FIG. 1 again.
  • the liquid crystal panel 400 includes a first substrate 411, a thin film transistor 420, an insulating layer structure 430, an electrode unit 440, a liquid crystal layer 460, a black matrix 471, The color filter 472 and the second substrate 412 are included.
  • the first substrate 411 or the second substrate 412 of the liquid crystal panel 400 includes a pixel area (PA) and a non-pixel area (NPA).
  • the pixel area PA refers to an area of a minimum unit where actual light is emitted, and distinguishes the pixel area PA between two adjacent pixel areas PA.
  • the pixel area PA is an area in which light is emitted and may be referred to as an opening.
  • the non-pixel area NPA is a region in which light is not emitted and may be referred to as a non-opening part.
  • the pixel area PA may be referred to as a sub-pixel or a pixel.
  • the plurality of pixel areas PA may be a minimum group that represents white light.
  • three pixels may be one group, and each of the red pixels may be red.
  • a pixel, a green pixel, and a blue pixel may form a group.
  • a color filter 472 for converting the white light L of the light source 100 to each pixel is disposed in each pixel, and a red color filter, a green color filter, and a blue color filter are respectively disposed.
  • the first substrate 411 or the second substrate 412 may be made of an insulating material, and may be made of, for example, a flexible film made of glass or polyimide-based material.
  • the thin film transistor 420 is disposed on the non-pixel region NPA of the first substrate 411.
  • the thin film transistor 420 supplies a signal to the electrode unit 440 driving the liquid crystal layer 460.
  • the thin film transistor 420 includes a gate electrode 421, an active layer 422, a source electrode 423, and a drain electrode 424.
  • a gate electrode 421 is formed on a first substrate 411, and a first insulating layer 431 covers the gate electrode 421.
  • the active layer 422 is disposed on the first insulating layer 431 to overlap the gate electrode 421, and the source electrode 423 and the drain electrode 424 are spaced apart from each other on the active layer 422. do.
  • the overlapping of two objects may mean that at least a portion overlaps with each other regardless of the existence of another object in a vertical relationship between the two objects, and is also referred to by various other names. May be
  • the gate electrode 421, the source electrode 423, and the drain electrode 424 are made of a conductive material.
  • a conductive material For example, molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), and titanium ( One of Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or alloys thereof, but is not limited thereto, and may be formed of various materials.
  • the active layer 422 may be formed of any one of an oxide semiconductor, for example, InGaZnO, InGaO, or InSnZnO, but is not limited thereto.
  • At least one insulating layer formed between the first substrate 411 and the electrode unit 440 may be referred to as an insulating layer structure 430.
  • the insulating layer structure 430 may include at least one of the first insulating layer 431, the second insulating layer 432, or the third insulating layer 433.
  • the first insulating layer 431 is disposed on the gate electrode 421, and insulates the gate electrode 421 and the active layer 422, or the gate electrode 421, the source electrode 423, and the drain electrode 424. do.
  • the first insulating layer 431 may be referred to as a gate insulating layer.
  • the second insulating layer 432 is a layer for protecting the thin film transistor 420 and is disposed to cover the source electrode 423 and the drain electrode 424.
  • the second insulating layer 432 may be referred to as a passivation layer.
  • the first insulating layer 431 and the second insulating layer 432 may be composed of a single layer made of an inorganic material, for example, silicon nitride (SiN x ).
  • SiN x silicon nitride
  • FIG. 1 although the first insulating layer 431 and the second insulating layer 432 of the liquid crystal panel 400 are described as being made of a single layer, the present invention is not limited thereto. In other words, the first insulating layer 431 and the second insulating layer 432 may be formed of a plurality of layers.
  • first insulating layer 431 and the second insulating layer 432 are formed of a plurality of layers, for example, a double structure of silicon nitride (SiNx) and silicon oxide (SiO 2 ) may be provided.
  • the active layer 422 is made of an oxide semiconductor
  • the electrical characteristics are also increased depending on the hydrogen (H) supplied from the moisture.
  • H hydrogen
  • silicon nitride (SiNx) having excellent barrier properties may be disposed.
  • silicon nitride (SiNx) may change the characteristics of the oxide semiconductor by hydrogen injected during the deposition process
  • silicon nitride (SiNx) may have a structure further including a silicon oxide film (SiO 2 ).
  • the third insulating layer 433 is a layer having a flat upper surface and is disposed on the second insulating layer 432.
  • the third insulating layer 433 may be composed of a single layer or a plurality of layers made of an organic material.
  • the third insulating layer 433 may be made of polyaluminum chloride (PAC), polyimide, or acryl.
  • the third insulating layer 433 may be referred to as a planarization layer.
  • the second insulating layer 432 and the third insulating layer 433 include a contact portion exposing the drain electrode 424, and the electrode portion 440 and the thin film transistor 420 are electrically connected through the contact portion.
  • the second insulating layer 432 and the third insulating layer 433 may include a contact portion exposing the source electrode 423 according to the type of the thin film transistor 420.
  • the insulating layer structure 430 of the display device 1000 includes at least one of the first insulating layer 431, the second insulating layer 432, and the third insulating layer 433.
  • the insulating layer structure 430 is configured to be different from each other in the pixel area PA and the non-pixel area NPA, so that a specific light L including a peak wavelength having a narrow half width is supplied to the liquid crystal panel 400. The viewing angle dependence at can be minimized.
  • the color separation phenomenon according to the viewing angle may be further increased by the difference in refractive index between the insulating layers.
  • the color separation phenomenon according to the viewing angle may increase rapidly with light having a peak wavelength having a narrow half width.
  • the color separation phenomenon is a phenomenon in which the transmittance of a specific light is oscillated and color is separated according to the viewing state.
  • the color separation phenomenon may increase rapidly as the difference in refractive index between the thin film layers or the light having a narrow half width is increased. have.
  • the red light having a narrow half-value width is compared with the blue light or green light having a relatively half-value width, and thus, the plurality of thin film layers. Transmittance fluctuation according to the viewing angle due to the difference in refractive index between them becomes larger. As a result, the color separation phenomenon of the red light is further increased, and the variation in the color reproducibility according to the viewing angle is also increased, which may cause a serious problem in that the display quality of the display device 1000 is degraded.
  • the insulating layer structures of the pixel area PA and the non-pixel area NPA are configured differently, so that the variation in transmittance according to the viewing angle may be minimized even when red light having a narrow half width is passed.
  • the difference in refractive index between the plurality of insulating layers corresponding to the pixel area PA may be minimized so that variation in transmittance according to the viewing angle may be minimized even when red light passes.
  • the insulating layer structure 430 of the pixel area PA may be formed of only an insulating layer made of a material that substantially matches the refractive index of the first substrate 411. The refractive index difference can be minimized.
  • the fact that the refractive indices of the two layers substantially coincide means that the difference in refractive indices between the materials constituting the two layers is substantially coincident, and specifically, when the difference in refractive indices between the two layers is 0.05 or less, It can be seen that the refractive indices of the layers are substantially coincident.
  • the refractive index of the first substrate 411 is about 1.5
  • the first insulating layer 431 and the second insulating layer 432 are made of silicon nitride (SiNx)
  • the refractive index of the first insulating layer 431 and the second insulating layer 431 is about 1.88.
  • the third insulating layer 433 is made of a photo acryl compound (PAC)
  • the refractive index of the third insulating layer 433 is about 1.5. In this case, the red light having a narrow half width passes through the first substrate 411, the first insulating layer 431, the second insulating layer 432, and the third insulating layer 433 corresponding to the pixel area PA.
  • the electrode unit 440 for driving the liquid crystal layer 460 is disposed on the insulating layer structure 430.
  • the electrode unit 440 includes a common electrode 441 and a pixel electrode 442 patterned on the common electrode 441, and a fourth insulating layer 450 between the common electrode 441 and the pixel electrode 442. ) May be arranged.
  • the pixel area PA and the non-pixel area NPA may be divided into the end Z of the common electrode 441, and the end of the common electrode 441 is the pixel area. It may be a boundary line Z that separates the PA from the non-pixel area NPA.
  • the present invention is not limited thereto, and according to the design of the liquid crystal panel 400, the pixel area PA and the non-pixel area NPA may be divided by a boundary line between the black matrix 471 and the color filter 472. It may be distinguished only by the end of the black matrix 471.
  • the pixel electrode 442 is disposed on the common electrode 441 in the drawing, the common electrode 441 is disposed on the pixel electrode 442 or the common electrode 441 depending on the driving method of the liquid crystal layer 460. ) And the pixel electrode 442 may be disposed on the same plane.
  • an end Y of the second insulating layer 432 is formed at an interface between the pixel area PA and the non-pixel area NPA than the end X of the first insulating layer 431.
  • Z, or close to the end Z of the common electrode 441, that is, the second insulating layer 432 disposed in the non-pixel region NPA covers the side surface of the first insulating layer 431. Since the path through which external moisture (H 2 O), hydrogen (H 2 ), or the like penetrates through the interface between the layers becomes long, the thin film transistor 420 may be more effectively protected.
  • the present invention is not necessarily limited thereto, and according to the manufacturing method, the first insulating layer 431 and the second insulating layer 432 are removed at the same time, whereby the end X and the second end of the first insulating layer 431 are removed.
  • the end Y of the insulating layer 432 may be located on the same plane.
  • the thin film transistor 420 of the non-pixel area NPA of the first substrate 411 is illustrated as a staggered structure, but is not limited thereto, and may be formed as a coplanar structure. have.
  • the thin film transistor 420 has a coplanar structure
  • the thin film transistor 420 has a structure in which an active layer, a gate insulating layer, a gate electrode, an interlayer insulating layer, a source electrode, and a drain electrode are sequentially stacked.
  • the gate insulating layer and the interlayer insulating layer are made of a material different from the refractive index of the first substrate 411, the gate insulating layer and the interlayer insulating layer may not be extended to the pixel area PA.
  • the gate insulating layer or the interlayer insulating layer may be referred to as a first insulating layer.
  • An embodiment of the present invention is positioned in the non-pixel region NPA of the first substrate 411 and includes a gate electrode 421, an active layer 422, a source electrode 423, and a drain electrode 424.
  • the thin film transistor 420 covers the first insulating layer 431 and the source electrode 423 and the drain electrode 424 that insulate the gate electrode 421, the source electrode 423, and the drain electrode 424. It may be regarded as including a second insulating layer 432.
  • the first insulating layer 431 to minimize transmission oscillation according to a viewing angle that may occur while the specific light L of the light source 100 passes through the pixel area PA.
  • the second insulating layer 432 do not extend to the pixel area PA. Accordingly, the color separation phenomenon of the peak wavelength having a relatively narrow half-value width included in the specific light L of the light source 100 is prevented.
  • the problem of minimizing the display quality of the display device 1000 may be improved.
  • FIG 3 is a cross-sectional view illustrating main components of the display device 1000 according to an exemplary embodiment.
  • a stacked structure of an insulating layer structure 430 of a pixel area PA and a non-pixel area NPA is illustrated. Is a cross-sectional view comparing schematically.
  • the insulating layer structure 430N of the non-pixel area NPA includes a first insulating layer 431, a second insulating layer 432, and a third insulating layer 433.
  • the first insulating layer 431 and the second insulating layer 432 made of a material having a different refractive index from that of the first substrate 411 are removed. Only the third insulating layer 433 made of a material having substantially the same refractive index as the first substrate 411 is included.
  • the first insulating layer 431 and the second insulating layer 432 may be formed of, for example, silicon nitride (SiNx).
  • the insulating layer made of a material different from the refractive index of the first substrate 411 is removed from the pixel area PA, thereby removing the pixel area PA.
  • the number of insulating layers of the insulating layer structure 430P may be smaller than the number of insulating layer structures 430N of the non-pixel area NPA. Accordingly, since the difference in refractive index between the first substrate 411 or the insulating layer corresponding to the pixel area PA is eliminated, the transmittance fluctuation according to the viewing angle of the specific light L including the peak wavelength of narrow half-width is also reduced. Can be.
  • the first peak wavelength for example, the green peak wavelength or the blue peak wavelength
  • the half width of the first peak wavelength are 25%.
  • the specific light L including the second peak wavelength for example, the red peak wavelength
  • the specific light L of the light source is the liquid crystal panel 400.
  • the insulating layer of the pixel area PA such that the transmittance fluctuation according to the viewing angle that may occur while passing through the pixel area A of the X), specifically, the transmittance fluctuation of the light of the second peak wavelength (for example, red light) is minimized.
  • the structure 430P and the insulating layer structure 430N of the non-pixel area NPA are configured differently. That is, only a layer made of a material substantially matching the refractive index of the first substrate 411 among the plurality of insulating layers included in the insulating layer structure 430 is disposed in the pixel area PA.
  • the first insulating layer 431, which insulates the gate electrode 421, the source electrode 423, and the drain electrode 424 of the thin film transistor 420, and the source electrode 423 and the drain electrode 424 are separated from each other.
  • the covering second insulating layer 432 does not extend to the pixel area PA. Accordingly, since the variation of the color reproducibility of the display apparatus 1000 according to the viewing angle is minimized, the problem of deterioration of display quality may be solved.
  • 4A and 4B are graphs illustrating variation in transmittance according to viewing angles of a comparative example and an embodiment of the present invention.
  • Figure 4a is a graph showing the change in transmittance according to the viewing angle when the structure of the comparative example is used.
  • peak wavelengths are shown in the red wavelength region, the green wavelength region, and the blue wavelength region.
  • specific light in which the half width of the peak wavelength in the red wavelength region is narrower than the half width of the peak wavelength in the other wavelength region is incident on the liquid crystal panel.
  • the structure of the comparative example is a structure of a display device in which the insulating layer structure of the pixel region and the insulating layer structure of the non-pixel region have the same structure
  • FIG. 4A shows red light (RED) and green when the above-described light is incident in this comparative example.
  • the first and second insulating layers described above with reference to FIGS. 1 to 3 are graphs showing variation in transmittance according to the viewing angle of the display device in which the non-pixel region and the pixel region are disposed.
  • the maximum transmittance is about 79%, the minimum transmittance is about 70%, and the variation range is about 9% between the viewing angles of 0 degrees to 70 degrees.
  • the maximum transmittance is about 85%, the minimum transmittance is about 69%, and the variation range is about 16% between the viewing angles of 0 degrees to 70 degrees.
  • red light has a maximum transmittance of about 90%, a minimum transmittance of about 62%, and a fluctuation range of about 28% between 0 and 70 degrees of viewing angle. It can be seen that the variation of about 3.1 times and 1.75 times occurred more significantly than the red light.
  • the vibration of the height of the transmittance of the red light RED occurs several times compared to the blue light or the green light. .
  • Figure 4b is a graph showing the transmittance variation according to the viewing angle when the structure of one embodiment of the present invention is used.
  • the incident light has a peak wavelength in the red wavelength region, the green wavelength region, and the blue wavelength region, and the half width of the peak wavelength in the red wavelength region is configured to be smaller than the half width of the peak wavelength in the other wavelength region.
  • 4B illustrates red light RED, green light GREEN, and blue light BLUE when such specific light is incident on a display device in which the insulating layer structure of the pixel region and the insulating layer structure of the non-pixel region are different from each other.
  • the first insulating layer and the second insulating layer described with reference to FIGS. 1 to 3 are disposed only in the non-pixel region, and are graphs showing variation in transmittance according to the viewing angle of the display device configured not to extend to the pixel region.
  • the maximum transmittance is about 78%, the minimum transmittance is about 68%, and the variation range is about 10% between the viewing angles of 0 degrees to 70 degrees.
  • the maximum transmittance is about 82%, the minimum transmittance is about 69%, and the variation range is about 13% between the viewing angles of 0 degrees to 70 degrees.
  • the maximum transmittance is about 85%, the minimum transmittance is 70%, and the fluctuation range is about 15%.
  • the transmission fluctuation ranges of the blue light BLUE, the green light GREEN, and the red light RED have similar values, and as shown in FIG. 4B, as the viewing angle is changed, the blue light BLUE or green color is changed. It can be seen that the vibration curves of the heights of the transmittances of the light GREEN and the red light RED also have a similar shape.
  • the peak wavelength of the wavelength region in which the half width of the peak wavelength of the red wavelength region is different When a specific light configured to be narrower than the half width of the incident light enters the liquid crystal panel, it can be seen that the transmittance variation curves of the red wavelength region, the green wavelength region, and the blue wavelength region in the pixel region all have similar shapes.
  • the first insulating layer and the second insulating layer of the display device according to the exemplary embodiment of the present invention are configured not to extend to the pixel region, thereby including a peak wavelength having a narrow half width. It can be seen that there is an effect of reducing transmittance fluctuation according to a viewing angle that can be generated while specific light passes through the pixel region.
  • 5A and 5B are graphs illustrating changes in color coordinates according to viewing angles of a comparative example and an embodiment of the present invention.
  • the display device used in FIG. 5A has the structure of the comparative example described with reference to FIG. 4A.
  • 5A is a graph illustrating color coordinate change ⁇ u ′ according to a viewing angle of a display device in which the insulating layer structure of the pixel area and the insulating layer structure of the non-pixel area have the same structure.
  • white specific light having a peak wavelength in a red wavelength region, a green wavelength region, and a blue wavelength region, and having a half width of a peak wavelength of a red wavelength region narrower than a half width of a peak wavelength of another wavelength region,
  • the color coordinate is greatly changed as the viewing angle is changed.
  • the color separation phenomenon according to the viewing angle of the specific light is increased by the refractive index difference between the plurality of thin film layers included in the insulating layer structure of the pixel region, so that the variation of the color coordinates may be greatly increased according to the change of the viewing angle. .
  • the variation in color reproducibility according to the viewing angle is increased, which may lead to a problem in that display quality of the display device is degraded.
  • the display device used in FIG. 5B has the structure of one embodiment of the present invention described with reference to FIG. 4B.
  • 5B is a graph illustrating color coordinate change ⁇ u ′ according to a viewing angle of a display device in which the first insulating layer and the second insulating layer are disposed only in the non-pixel region and are not extended to the pixel region.
  • white specific having a peak wavelength in the red wavelength region, the green wavelength region, and the blue wavelength region, the half width of the peak wavelength of the red wavelength region being narrower than the half width of the peak wavelength of the other wavelength region.
  • the insulation layer structure of the pixel region and the insulation layer structure of the non-pixel region are different from each other, the variation of color coordinates according to the viewing angle that can occur while specific light passes through the pixel region is hardly generated. It can be seen that the fluctuation of? Is reduced and the display quality of the display device is improved.
  • the first insulating layer and the second insulating layer of the liquid crystal panel may have a single layer made of silicon nitride (SiNx) having good barrier properties, but the first insulating layer may be used to improve the characteristics of the active layer.
  • the second insulating layer may further include silicon oxide (SiO 2 ) in addition to silicon nitride (SiNx).
  • first and second insulating layers including the plurality of layers will be described in more detail with reference to FIGS. 6 to 10.
  • FIG. 6 is a plan view illustrating a display device according to another exemplary embodiment of the present invention.
  • the display device 600 may include an active area AA displaying an image and an inactive area NAA disposed outside the active area AA without displaying an image. ).
  • a plurality of data lines DL and a plurality of gate lines GL are disposed in the active area AA, and the pixels P may be defined by the plurality of data lines DL and the plurality of gate lines GL. have.
  • Each pixel P includes an opening OA configured to transmit light and a non-opening portion NOA adjacent to the opening OA and to which light is not transmitted.
  • the opening OA is a region in which the pixel electrode is disposed, and refers to a region in which the actual light is transmitted from the light source, and may correspond to the pixel region PA of FIG. 1. Accordingly, a detailed description of the opening OA will be omitted.
  • the non-opening portion NOA is a region in which the driving thin film transistor for driving the pixel electrode is disposed.
  • the non-opening portion NOA is a region through which light is not transmitted and may correspond to the non-pixel region NPA of FIG. 1. Accordingly, a more detailed description of the non-opening portion NOA will be omitted.
  • the inactive region NAA is disposed adjacent to the active region AA, and a gate in panel (GIP) connected to the plurality of gate lines GL is disposed.
  • GIP gate in panel
  • the display device 600 is disposed in each of the non-opening portion NOA of the inactive region NAA and the active region AA and the opening OA of the active region AA.
  • the structures of the insulating layer structure are arranged to be configured differently from each other. As a result, variations in color coordinates according to the viewing angles that may occur while specific light passes through the opening OA are hardly generated. Therefore, the variation in color reproducibility according to the viewing angle is reduced, and the display quality of the display device can be improved, and the oxide semiconductor is disposed in the non-active area NAA and the non-opening part NOA of the active area AA. The reliability of the display device can be improved by not changing the electrical characteristics of the active layer.
  • Such a structure of the active area AA and the inactive area NAA of the display device 600 according to another exemplary embodiment of the present invention will be described in detail with reference to FIGS. 7 to 9.
  • FIG. 7 through 9 are cross-sectional views of display devices of various exemplary embodiments taken along the line of FIG.
  • a thin film transistor is disposed in the non-opening portion NOA and the inactive region NAA of the active layer AA.
  • the thin film transistor includes gate electrodes 720G and 720N, active layers 740G and 740N, source electrodes 750G and 750N, drain electrodes 760G and 760N, and an insulating film structure 730.
  • the configuration of the thin film transistor of FIG. 7 except for the insulating layer structure 730 is the same as the thin film transistor of FIG. 1, a detailed description thereof will be omitted.
  • reference numeral 770 which is not described, denotes an interlayer insulating layer for insulating the common electrode 791 and the pixel electrode 792 disposed in the opening OA
  • reference numeral 780 denotes a third insulating layer of FIG. And a planarization layer.
  • the third insulating layer is described as being included in the insulating layer structure, but in the configuration according to another exemplary embodiment, only the first insulating layer and the second insulating layer are included as the insulating layer structure.
  • the insulating layer structure 730 includes a plurality of first sub insulating layers 731 and 734 and a plurality of second sub insulating layers 732 and 733.
  • the plurality of first sub insulation layers 731 and 734 is disposed only over the non-opening portion NOA and the inactive region NAA of the active region AA.
  • the plurality of first sub insulation layers 731 and 734 may be formed of silicon nitride (SiNx) having a first refractive index.
  • the plurality of first sub insulation layers 731 and 734 may include the gate electrode 720G of the inactive region NAA and the gate electrode 720N and the inactive region NAA of the non-opening portion NOA of the active region AA.
  • the first insulating layer disposed between the active layer 740G and the active layer 740N of the non-opening portion NOA of the active region AA may be one of a plurality of sub insulating layers forming the gate insulating layer.
  • the second insulating layer may be one of a plurality of sub insulating layers forming a second insulating layer, that is, a passivation layer, for protecting the thin film transistors disposed in the inactive region NAA and the non-opening portion NOA of the active region AA.
  • the plurality of first sub insulation layers 731 and 734 includes one first sub insulation layer 731 forming a gate insulation layer throughout the non-opening portion NOA and the non-active region NAA of the active region AA. ) And one non-opening portion NOA of the active region AA and one first sub insulation layer 734 forming a passivation layer over the entire inactive region NAA. That is, a plurality of first sub insulation layers 731 and 734 may be disposed in the non-opening portion NOA and the inactive region NAA of the active region AA. This is because the active layers 740G and 740N according to the embodiment of the present invention are formed of an oxide semiconductor.
  • silicon nitride having good barrier properties SiNx is disposed above and below the active layers 740G and 740N.
  • the plurality of first sub insulation layers 731 and 734 may not be disposed in the opening OA of the active region AA, but only one first sub insulation layer 731 may be disposed. That is, the first sub insulation layer 731 is disposed over the inactive region NAA and the entire active region AA, and the second sub insulation layer 734 is disposed in the opening OA of the active region AA. It may not be. This is because the opening OA of the active area AA is a region through which light is transmitted. Therefore, when a plurality of first sub insulation layers 731 and 734 having a higher refractive index than the second sub insulation layers 732 and 733 are disposed, a plurality of openings OA are provided. This is because an interface with a difference in refractive index may increase, and light reflection may occur between the first sub insulation layers 731 and 734, which may increase color variation and deteriorate display quality.
  • the plurality of second sub insulation layers 732 and 733 are disposed over the inactive region NAA and the active region AA.
  • the plurality of second sub insulation layers 732 and 733 may be formed of silicon oxide (SiO 2 ) having a second refractive index lower than the first refractive index.
  • the difference in refractive index is substantially coincident between the third insulating layer 780 and the plurality of second sub insulating layers 732 and 733, so that the transmittance variation according to the viewing angle may be minimized even when red light is passed.
  • the second sub insulation layer 732 may be disposed between the gate electrode 720G and the active layer 740G of the inactive region NAA, and the gate electrode 720N of the non-opening portion NOA of the active region AA.
  • the first insulating layer disposed between the active layers 740N, that is, the sub insulating layer constituting the gate insulating layer may be one of the plurality of sub insulating layers.
  • the second sub insulation layer 733 includes a plurality of second insulation layers, that is, passivation layers, for protecting the thin film transistors disposed in the inactive regions NAA and the non-opening portions NOA of the active regions AA. It may be one of the sub insulation layers.
  • the plurality of second sub insulation layers 732 and 733 may be configured not to be disposed in the opening OA of the active area AA, as in the above-described embodiment.
  • the substrate 710 may be disposed in the entirety of the substrate 710 including the opening OA.
  • Silicon nitride (SiNx) constituting the first sub insulation layers 731 and 734 is generally deposited by PECVD.
  • hydrogen (H) may be injected during the deposition process.
  • the electrical characteristics of the active layers 740G and 740N made of oxide semiconductors may be deteriorated, so to prevent this, the active layers 740G and 740N are based on the active layers 740G and 740N.
  • Second sub insulation layers 732 and 733 are interposed between the first sub insulation layers 731 and 734. Meanwhile, a part of the second sub insulation layer 733 may be partially removed when the first sub insulation layer 734 is removed from the opening OA.
  • the display apparatus may be disposed even in the opening OA of the active region AA.
  • the influence on the display quality of 600 may not be large.
  • only one first sub insulation layer 731 constituting the gate insulation layer is disposed in the opening OA of the active region AA.
  • only the first sub insulation layer 734 forming the passivation layer is disposed in the opening OA of the active region AA among the plurality of first sub insulation layers 731 and 734. to be.
  • the first sub insulation layer 731 ′ forming the first insulation layer among the plurality of first sub insulation layers 731 ′ and 734 ′ may be formed in the opening OA of the active region AA.
  • the first sub insulation layer 734 'constituting the second insulation layer is also disposed in the opening OA of the active region AA.
  • the plurality of first sub insulating layers 731 'and 734' are disposed in the non-opening portion NOA of the inactive region NAA and the active region AA, and the opening of the active region AA is formed. Only one first sub insulation layer 731 'or 734' 'of the plurality of first sub insulation layers 731' and 734 'is disposed in the OA. Accordingly, an interface having a difference in refractive index between the material of the first sub insulation layers 731 ′ and 734 ′ and the second sub insulation layers 732 and 734 ′, the substrate 710, and the third insulation layer 780. The decrease in display quality of the display device 600 can be minimized.
  • a plurality of second sub insulation layers 732 and 733 are disposed on the entire inactive region NAA and the active region AA so as to form the first sub insulation layers 731 'and 734'. Deterioration of electrical characteristics of the active layers 740G and 740N may be minimized.
  • the first sub insulation layers 731 ′ and 734 having high refractive indexes are formed. It is not disposed in the opening OA of the active area AA. Accordingly, an interface having a difference in refractive index between the substrate 710, the second sub insulation layers 732 and 733, and the third insulation layer 780 may be minimized, thereby further improving display characteristics.
  • the first sub insulation layers 731 and 734 are removed only from the opening OA of the active region AA among the active region AA and the inactive region NAA on the substrate 710.
  • it may be performed by dry etching using a mask.
  • the layers to be removed among the plurality of first sub insulation layers 731 and 734 are not removed at the end of the non-opening portion NOA of the active region AA, but between the non-opening portion NOA and the opening OA. It may be arranged to extend further into the opening OA beyond the boundary.
  • the lengths of the first sub insulation layers 731 and 734, which may further extend into the opening OA may be determined based on the color coordinate values of the pixel P. That is, as long as the color coordinate value of the pixel P is within a required range, a part of the first sub insulation layers 731 and 734 may extend into the opening OA. As a result, the color coordinate of the pixel P can be satisfied and the reliability of the oxide semiconductor can be further improved.
  • 10A and 10B are graphs showing changes in color coordinates according to viewing angles of a comparative example and another embodiment of the present invention.
  • FIG. 10A illustrates a structure in which an insulating layer structure disposed in the opening portion OA of the active region AA and an inactive region NAA and an insulating layer structure disposed in the non-opening portion NOA of the active region AA have the same structure. It is a graph which shows the change of the color coordinate according to the viewing angle of the display device which has.
  • a display device having a comparative example structure white specific light having a peak wavelength in a red wavelength region, a green wavelength region, and a blue wavelength region, and having a half width of a peak wavelength of a red wavelength region narrower than a half width of a peak wavelength of another wavelength region,
  • the color coordinate is greatly changed as the viewing angle is changed. That is, as described above, the color separation phenomenon according to the viewing angle of the specific light is increased due to the difference in refractive index between the plurality of thin film layers included in the insulating layer structure of the opening OA of the active area AA. It can be seen that the fluctuation is also large. As a result, the variation in color reproducibility according to the viewing angle is increased, which may lead to a problem in that display quality of the display device is degraded.
  • FIG. 10B illustrates that the insulating layer structure disposed in the inactive region NAA and the non-opening portion NOA of the active region AA and the insulating layer structure of the opening OA of the active region AA are different from each other.
  • white specific having a peak wavelength in the red wavelength region, the green wavelength region, and the blue wavelength region, the half width of the peak wavelength of the red wavelength region being narrower than the half width of the peak wavelength of the other wavelength region.
  • the plurality of first sub insulation layers 731 may be disposed in the non-opening portion NOA of the inactive region NAA and the active region AA.
  • 734 and the plurality of second sub insulating layers 732 and 733 are all disposed, and only the plurality of second sub insulating layers 732 and 733 are disposed in the opening OA of the active area AA, or one Only one sub insulation layer 731 or 734 is configured to be further disposed.
  • the number of interfaces having the difference in the refractive indices of the openings OA of the active layer AA is minimized so that variations in color coordinates hardly occur, thereby improving display quality of the display device and protecting characteristics and reliability of the oxide semiconductor. can do.
  • the display device 600 may include a plurality of first subs in the inactive area NAA where the active layers 740G and 740N are disposed and the non-opening part NOA of the active area AA. Since the insulating layers 731 and 734 are configured such that the active layers 740G and 740N are disposed up and down, the electrical characteristics of the active layers 740G and 740N may be minimized to reduce the reliability of the display device.
  • the display device 600 may include the active layers 740G and 740N and the active layers 740G, which are disposed in the non-opening portion NOA of the inactive region NAA and the active region AA.
  • the plurality of first sub insulation layers 731 and 734 are interposed between the plurality of first sub insulation layers 731 and 734 disposed above and below 740N. It is possible to minimize the occurrence of defects in the active layers 740G and 740N that may occur during the deposition process.
  • the half width of the peak wavelength FWHM of one of the plurality of peak wavelengths is narrow.
  • the transmittance variation and the color coordinate variation according to the viewing angle of the light of the peak wavelength having a relatively narrow half width can be minimized.
  • variations in color reproducibility of the display device according to the viewing angle may be minimized, thereby improving display quality of the display device.
  • the number of insulating layers of the insulating layer structure of the pixel area may be less than the number of insulating layers of the insulating layer structure of the non-pixel area.
  • the insulating layer structure of the pixel area may include at least one layer made of a material substantially matching the refractive index of the substrate among the first insulating layer, the second insulating layer, and the third insulating layer.
  • the electrode unit may include a common electrode and a pixel electrode patterned on the common electrode, and an end of the common electrode may define a boundary line separating the pixel area and the non-pixel area.
  • An end of the second insulating layer of the insulating layer structure of the non-pixel region may be located closer to the end of the common electrode than the end of the first insulating layer.
  • An end of the second insulating layer and an end of the first insulating layer of the insulating layer structure of the non-pixel region may be positioned on the same plane.
  • the transmittance variation curve according to the viewing angle of the light of the first peak wavelength in the pixel region and the transmittance variation curve according to the viewing angle of the light of the second peak wavelength may have a similar shape.
  • the second insulating layer of the insulating layer structure in the non-pixel region may be configured to cover the side surface of the first insulating layer.
  • the first insulation layer is a gate insulation layer or an interlayer insulation layer
  • the second insulation layer is a passivation layer
  • the third insulation layer is a planarization layer
  • the second insulation layer and the third insulation layer are formed with the electrode portion. It may include a contact unit for connecting the thin film transistor.
  • the first peak wavelength may be 430 nm or more and 480 nm or less, or 520 nm or more and 560 nm or less, and the second peak wavelength may be 600 nm or more and 650 nm or less.
  • the specific light of the light source may include a first peak wavelength and a second peak wavelength having a half width of 25% or less compared with the half width of the first peak wavelength.
  • the first peak wavelength may be 430 nm or more and 480 nm or less, or 520 nm or more and 560 nm or less, and the second peak wavelength may be 600 nm or more and 650 nm or less.
  • the second insulating layer may be configured to cover side surfaces of the first insulating layer.
  • a display device includes an active region including an opening configured to transmit light and a non-opening portion adjacent to the opening and not transmitting the light, and an inactive region adjacent to the active region and having a gate-in panel disposed thereon.
  • a substrate a first sub insulation layer having a first refractive index disposed in a non-opening portion and an inactive region of an active region, and a second refractive index disposed in the entire active region and the inactive region, and having a second refractive index lower than the first refractive index.
  • a sub insulation layer is disposed in the entire active region and the inactive region.
  • a first insulating layer which insulates the active electrode and the gate electrode disposed in the non-opening driving thin film transistor and the gate in panel of the inactive region, and the source of the driving thin film transistor of the non-opening portion and the gate in panel of the inactive region
  • a second insulating layer is disposed on the electrode and the drain electrode, and the active layer may be formed of an oxide semiconductor.
  • the first insulating layer may include a plurality of sub insulating layers, the first sub insulating layer may be one of the first insulating layers, and the first sub insulating layer may be formed of silicon nitride (SiNx).
  • the second insulating layer may be formed of a plurality of sub insulating layers, the first sub insulating layer may be one of the second insulating layers, and the first sub insulating layer may be formed of silicon nitride (SiNx).
  • the second sub insulating layer may be one of a plurality of sub insulating layers forming the first insulating layer or a plurality of sub insulating layers forming the second insulating layer, and the second sub insulating layer may be made of silicon oxide (SiO 2).
  • the first sub insulation layer further extends into the opening beyond the boundary between the non-opening portion and the opening of the active region, and the length of the first sub insulation layer further extending into the opening is the opening and the non-opening portion. It may be determined based on the color coordinate value of the configured sub-pixel.

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Abstract

Selon un mode de réalisation, la présente invention concerne un transistor en couches minces incluant une électrode de grille, une couche active, une électrode de source et une électrode de drain dans une région sans pixels d'un substrat et qui comprend : une première couche isolante pour isoler l'électrode de grille de l'électrode de source et de l'électrode de drain ; et une deuxième couche isolante pour recouvrir l'électrode de source et l'électrode de drain. Selon un mode de réalisation de la présente invention, la première couche isolante et la deuxième couche isolante sont conçues de sorte qu'elles ne s'étendent pas vers la région de pixels afin de minimaliser l'oscillation du substrat par rapport à un angle de visualisation, ladite oscillation pouvant être générée lorsqu'une lumière spécifique de la source lumineuse traverse la région de pixels.
PCT/KR2016/005357 2015-08-26 2016-05-20 Transistor en couches minces et dispositif d'affichage WO2017034122A1 (fr)

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KR10-2015-0120262 2015-08-26
KR20150120262 2015-08-26
KR1020160053556A KR102563157B1 (ko) 2015-08-26 2016-04-29 박막 트랜지스터 및 표시 장치
KR10-2016-0053556 2016-04-29

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JP2003195775A (ja) * 2001-12-27 2003-07-09 Seiko Epson Corp 電気光学装置、電気光学装置の製造方法、回路基板、回路基板の製造方法、電子機器
KR20040042274A (ko) * 2002-11-13 2004-05-20 엘지.필립스 엘시디 주식회사 휘도가 향상된 횡전계모드 액정표시소자
KR20070016723A (ko) * 2005-08-05 2007-02-08 삼성전자주식회사 백라이트 유닛 및 이를 사용한 액정 표시 장치
KR20080024762A (ko) * 2006-09-14 2008-03-19 삼성전자주식회사 액정표시장치
US20110090438A1 (en) * 2009-10-21 2011-04-21 Samsung Mobile Display Co., Ltd. Flat panel display device and method of manufacturing the same

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003195775A (ja) * 2001-12-27 2003-07-09 Seiko Epson Corp 電気光学装置、電気光学装置の製造方法、回路基板、回路基板の製造方法、電子機器
KR20040042274A (ko) * 2002-11-13 2004-05-20 엘지.필립스 엘시디 주식회사 휘도가 향상된 횡전계모드 액정표시소자
KR20070016723A (ko) * 2005-08-05 2007-02-08 삼성전자주식회사 백라이트 유닛 및 이를 사용한 액정 표시 장치
KR20080024762A (ko) * 2006-09-14 2008-03-19 삼성전자주식회사 액정표시장치
US20110090438A1 (en) * 2009-10-21 2011-04-21 Samsung Mobile Display Co., Ltd. Flat panel display device and method of manufacturing the same

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