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WO2016006865A1 - Structure de motif à film épais et son procédé de formation - Google Patents

Structure de motif à film épais et son procédé de formation Download PDF

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Publication number
WO2016006865A1
WO2016006865A1 PCT/KR2015/006781 KR2015006781W WO2016006865A1 WO 2016006865 A1 WO2016006865 A1 WO 2016006865A1 KR 2015006781 W KR2015006781 W KR 2015006781W WO 2016006865 A1 WO2016006865 A1 WO 2016006865A1
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WO
WIPO (PCT)
Prior art keywords
thick film
film pattern
pattern
coating
forming
Prior art date
Application number
PCT/KR2015/006781
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English (en)
Korean (ko)
Inventor
김용환
윤억근
Original Assignee
동우 화인켐 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동우 화인켐 주식회사 filed Critical 동우 화인켐 주식회사
Publication of WO2016006865A1 publication Critical patent/WO2016006865A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means

Definitions

  • the present invention relates to a thick film pattern formed by repeating a lamination process.
  • the thick film is formed by gradually increasing the pattern width to stack the same material layer to reduce the taper angle in the pattern edge region after all the layers are stacked.
  • a pattern structure and its formation method are related.
  • touch sensors have been widely applied in various electronic products such as mobile phones, personal digital assistants (PDAs), and handheld personal computers, where the technology of manufacturing capacitive touch sensors is most widely used.
  • the structure of a single glass type capacitive touch sensor is the main structure used for touch sensors.
  • the material for forming the touch sensing electrode layer is usually indium tin oxide (ITO).
  • the ITO layer is formed directly on the glass substrate by sputtering and then patterned to form the pattern of the touch sensing electrode layer.
  • the pattern of the touch sensing electrode layer includes an X-axis sensing electrode pattern and a Y-axis sensing electrode pattern, in which one axis of the sensing electrode pattern crosses another axis of the sensing electrode pattern.
  • a conductive layer is used to form
  • the insulating layer is formed at the position of the X-axis sensing electrode pattern and the Y-axis sensing electrode pattern crisscross each other to electrically insulate the X-axis sensing electrode pattern from the Y-axis sensing electrode pattern.
  • Such a touch sensor is formed on one surface of the transparent substrate 10 and the transparent substrate 10 partitioned into the active region 11 and the inactive region 12 which is an edge of the active region 11. It includes an electrode portion.
  • the transparent substrate 10 may serve to provide a region in which an electrode unit for detecting a touch position is formed.
  • the transparent substrate 10 should have a supporting force capable of supporting such an electrode portion and transparency to enable a user to recognize an image provided by the image display apparatus.
  • the touch sensor may be divided into an active region 11 and an inactive region 12 that is an edge region of the active region 11.
  • the active area 11 is an area where a touch action by the user is made, and is a screen area where the user visually checks the operation scene of the device.
  • the inactive region 12 is a region that is not covered by the bezel formed on the transparent substrate 10 and exposed to the outside.
  • a shielding layer for blocking backlight light located at the periphery of the active region 11 a protective layer for protecting the lower pattern, and an insulating layer for insulating the upper electrode lines are formed to have a predetermined thickness or more. do.
  • the thick film pattern formed to have a predetermined thickness or more generally has a thickness of 10 to 20 ⁇ m or more, and is not formed by a single coating process, and a thick film pattern having a desired thickness is formed by a repeated coating process to form a predetermined thickness or more. do.
  • the same coating width is used to perform the lamination coating process more than 1, 2, 3 times.
  • problems such as the flow of the photosensitive liquid occur as in (b).
  • a large inclination angle in the tapered portion (a) causes a problem of poor quality of the device due to a change in the film thickness of the thick film pattern and a change in the pattern width, thereby greatly reducing the yield.
  • Figure 3 illustrates a disconnection problem that occurs during the process progress after the thick film pattern formation in the prior art.
  • the present invention is to solve the problem of the thick film pattern of the prior art, a thick film to gradually reduce the taper angle in the pattern edge region after all the layers are laminated by stacking the same material layer by gradually increasing the pattern width Its purpose is to provide a pattern structure and a method of forming the same.
  • the taper angle in the edge region of the thick film pattern used as the protective layer and the insulating layer is reduced to solve problems such as film thickness change, pattern width change, and disconnection occurring during the subsequent process. And a method for forming the same.
  • the present invention provides a thick film pattern structure in which a photoresist is prevented from flowing down during a photolithography process on a thick film pattern by performing a coating process in a round cover method in which a pattern width gradually increases to cover a previously stacked layer, and a method of forming the same.
  • the purpose is to provide.
  • the thick film pattern structure according to the present invention for achieving the above object is a thick film pattern coating layer having any one pattern width; the size of the pattern width on the thick film pattern coating layer is gradually enlarged in the edge region of the thick film pattern coating layer is sequentially stacked And other thick film pattern coating layers, wherein the thick film pattern consisting of these thick film coating layers has a round cover shape covering the thick film coating layer laminated thereon.
  • the size of the enlarged width gradually increasing in the edge region of the thick film pattern is the same, or the size of the enlarged width is gradually smaller or gradually larger as stacked.
  • the formation thickness of the thick film coating layers constituting the thick film pattern is the same or, characterized in that the coating thickness is gradually increased or decreased as it is laminated.
  • the thick film pattern is formed by changing the size of the enlarged width in which the pattern width of the thick film pattern coating layers is gradually increased and changing the thickness of the thick film pattern coating layers.
  • taper angle in the edge region of the thick film pattern consisting of a thick film coating layer is characterized in that 5 ⁇ 10 °.
  • the total thickness of the thick film pattern consisting of a thick film coating layer is characterized in that 30 ⁇ 35 ⁇ m.
  • the portion having a round cover shape of the thick film pattern is located in the bezel area of the touch sensor.
  • the thick film pattern may be any one of a shielding layer for blocking backlight light, a protective layer for protecting a lower pattern, and an insulating layer for insulating the upper electrode lines.
  • a method of forming a thick film pattern comprising: coating a material for forming a thick film pattern using a mask having any one pattern width; sequentially using masks in which the size of the pattern width gradually increases And repeatedly coating the material for forming a thick film pattern to form a thick film pattern having a round cover shape covering a layer stacked in front of the edge region.
  • the enlarged size of the pattern width of the mask which is enlarged so that the thick film pattern has a round cover shape is the same or different.
  • the thick film pattern forming material may be coated such that the thickness of each coating layer to be laminated is the same, or the thickness of each coating layer is changed.
  • the gradually increasing pattern width size is characterized in that the taper angle at the edge region of the entire thick film pattern coated with the thick film pattern forming material is repeatedly 5 to 10 °.
  • the overall thickness of the thick film pattern is characterized in that 30 ⁇ 35 ⁇ m.
  • the thick film pattern forming material may be any one of a material for forming a shielding layer for blocking light, a material for forming a protective layer for protecting a lower pattern, and an insulating material for insulating from electrode lines.
  • Such a thick film pattern structure and its formation method according to the present invention has the following effects.
  • the taper angle at the edge region of the thick film pattern after all the layers are laminated can be reduced.
  • the thick film pattern is formed by a round cover method in which the pattern width gradually increases to suppress the flow of the photoresist during the photolithography process on the thick film pattern.
  • the taper angle in the edge region of the thick film pattern can be reduced to solve problems such as film thickness change, pattern width change, and disconnection that occur during the subsequent process.
  • 1 is a plan view of a typical touch sensor
  • FIG. 2 is a block diagram showing a thick film pattern cross-sectional structure of the prior art
  • Figure 3 is a cross-sectional view showing a disconnection region that occurs during the formation of the thick film pattern of the prior art and subsequent process
  • FIG. 4 is a configuration diagram of a touch sensor showing an example applied to the present invention
  • FIG. 6 is a flowchart illustrating a process sequence for forming a thick film pattern according to the present invention.
  • FIG. 7A and 7B are cross-sectional photographs of a thick film pattern formation and subsequent processes according to the present invention.
  • FIG. 4 is a configuration diagram of a touch sensor showing an example applied to the present invention
  • Figure 5 is a cross-sectional configuration diagram of a thick film pattern according to the present invention.
  • the present invention is to reduce the taper angle in the edge region of the thick film pattern used as the protective layer and the insulating layer to solve problems such as film thickness change, pattern width change and disconnection occurring during the subsequent process,
  • the thick film pattern is formed by a round cover method in which the pattern width gradually increases.
  • the touch sensor described as an example to which the thick film pattern structure and the method of forming the same according to the present invention is applied, as shown in FIG. 4, has an active region 11 in which an electrode part is located and an inactive region that is an edge region of the active region 11. 12).
  • the non-active area 12 is an area that is not covered by the bezel portion formed on the transparent substrate 10 and is not exposed to the outside.
  • the bezel portion has a shielding layer and a lower portion for blocking backlight light located at the periphery of the active region 11.
  • a protective layer for protecting the pattern and an insulating layer for insulating the upper electrode lines are formed to a predetermined thickness or more.
  • the transparent substrate 10 includes polyethylene terephthalate (PET), polycarbonate (PC), polymethyl methacrylate (PMMA), polyethylene naphthalate (PEN), polyether sulfone (PES), cyclic olefin polymer (COC), It is preferable to form with TAC (Triacetylcellulose), polyvinyl alcohol (PVA), polyimide (PI), polystyrene (PS), biaxially oriented polystyrene (K resin-containing biaxially oriented PS; BOPS),
  • TAC Triacetylcellulose
  • PVA polyvinyl alcohol
  • PI polyimide
  • PS polystyrene
  • BOPS biaxially oriented PS
  • the present invention is not limited thereto.
  • the electrode unit may be formed on one surface of the transparent substrate 10.
  • the electrode part may include an electrode formed in the active region 11 of one surface of the transparent substrate 10 and an electrode wiring formed in the inactive region 12 and connected to the edge of the electrode.
  • the portion where the electrode portion of the touch sensor is formed is not necessarily limited to one surface of the transparent substrate 10, for example, the electrode portion may be formed on the other surface or both sides of the transparent substrate 10, of course.
  • the electrode may be made of a conductive polymer or a metal oxide.
  • the conductive polymer may be made of any one or more of poly-3,4-ethylenedioxythiophene / polystyrenesulfonate (PEDOT / PSS), polyaniline, polyacetylene or polyphenylenevinylene.
  • PEDOT / PSS poly-3,4-ethylenedioxythiophene / polystyrenesulfonate
  • polyaniline polyaniline
  • polyacetylene polyacetylene or polyphenylenevinylene.
  • the metal oxide may be formed of indium-tin oxide.
  • the electrode is not limited to a conductive polymer or a metal oxide, and for example, the electrode may be formed of metal silver formed by exposing / developing a metal or silver salt emulsion layer formed in a mesh pattern.
  • the electrode wiring may be made of at least one of copper (Cu), aluminum (Al), gold (Au), silver (Ag), titanium (Ti), palladium (Pd) or chromium (Cr). It is not limited to this.
  • the electrode may be formed by a dry process, a wet process, or a direct patterning process.
  • the dry process means sputtering, evaporation, and the like
  • the wet process includes dip coating, spin coating, roll coating, spray coating, and the like.
  • the direct patterning process means screen printing, gravure printing, inkjet printing, or the like.
  • the regions (C), (D), and (B) of FIG. 4 are located at the periphery of the active region, and provide a shielding layer for blocking backlight light, a protective layer for protecting the lower pattern, and insulation from the upper electrode lines. It shows the area where the insulating layers are mainly formed.
  • the thick film pattern structure according to the present invention can be applied even when the thick film pattern is formed outside these areas.
  • the thick film pattern according to the present invention has a thick film pattern primary coating layer 50 having a first pattern width, as shown in FIG. 5, and a thick film pattern 1 having a second pattern width enlarged by a predetermined size from the first pattern width in the edge region.
  • the pattern tertiary coating layer 52 is included.
  • the number of coating layers to be laminated may be different.
  • the round cover type coating means that the coating layer is coated in a form of covering the previously coated coating layer with a predetermined size as shown in FIG.
  • the sizes B and C of the enlarged width gradually increasing in the edge region of the thick film pattern are the same, the sizes of the enlarged width may be gradually decreased (B> C) or gradually increased (B ⁇ C).
  • the coating thicknesses a, b, and c of the material layer for forming the thick film pattern are preferably the same, but the coating thickness may be gradually increased (a> b> c), or the coating thickness may be gradually decreased (a ⁇ b ⁇ c). Can be.
  • One of the other methods may form a thick film pattern structure by combining the size of the enlarged width gradually increasing in the edge region of the thick film pattern and the change in the coating thickness of the material layer for forming the thick film pattern.
  • the thick film pattern formed by such a process may have a taper angle of 5 to 10 ° to prevent the material 53 deposited in a subsequent process from flowing down.
  • the required thickness of the thick film pattern has a thickness of 10 ⁇ m or more, the problem is prevented from occurring in a subsequent process, and even when the thickness of the thick film pattern is very thick where the total thickness of the thick film pattern is 30 to 35 ⁇ m, the edge portion of the thick film pattern is prevented. Can effectively reduce the taper angle.
  • the thick film pattern may be any one of a shielding layer for blocking backlight light, a protective layer for protecting the lower pattern, and an insulating layer for insulating the upper electrode lines.
  • the shielding layer may be formed of a light absorbing material or a material having a color correction function, but is not limited to these materials, and it is obvious that other materials may be used to form a thick film pattern for shielding.
  • a dielectric thin film or the like may be used. It is natural that a thick film pattern for lower pattern protection may be formed using other materials without being limited to these materials.
  • the insulating layer may be formed of a material such as an oxide film or a nitride film, but is not limited to these materials, and it is natural that a thick film pattern for insulation may be formed using other materials.
  • Such a thick film pattern according to the present invention reduces the taper angle at the thick film pattern edge region by varying the pattern width in the process of coating the material for forming the thick film pattern many times to prevent the material deposited in the subsequent process from flowing down. It can prevent the occurrence of a change in the film thickness, a decrease in the pattern width and disconnection.
  • Such a coating process for forming a thick film pattern according to the present invention is made as follows.
  • FIG. 6 is a flowchart illustrating a process sequence for forming a thick film pattern according to the present invention.
  • the first mask having the first pattern width for forming the thick film pattern is aligned (S602).
  • the material for forming the thick film pattern is first coated by using the aligned first mask (S603).
  • the second mask having the pattern width larger than the first pattern width is aligned to the region where the thick film pattern forming material is first coated (S604).
  • the second layer of the thick film pattern forming material is secondly coated using the aligned second mask to form the first coated material layer in the form of a round cover (S605).
  • the third mask having the pattern width enlarged in the edge region than the second pattern width is aligned with the regions where the thick film pattern forming material is coated on the first and second layers (S606).
  • the material for forming the thick film is third-coated to cover the first and second coated material layers in the form of a round cover to form a thick-film pattern.
  • the formation of the thick film pattern forming material layer by using the 1,2,3rd coating process is described as an example, but the number of coating processes is not limited and may be different.
  • the thick film pattern according to the present invention to which such a process is applied may be any one of a shielding layer for blocking backlight light, a protective layer for protecting a lower pattern, and an insulating layer for insulating from upper electrode lines. .
  • the magnification widths of the first, second and third masks gradually expanded in the edge region of the thick film pattern may be the same or different.
  • the coating thickness of the material layer for forming the thick film pattern may be coated with the same thickness, or may be formed by varying the thickness of each coating layer.
  • the method of coating the layer of the formation material for the thick film pattern may include dip coating, spin coating, roll coating, spray coating, and the like, but is not limited thereto. It is also possible to use other lamination methods.
  • the thick film pattern by the thick film pattern structure and the formation method according to the present invention is formed by a round cover coating method to gradually increase the pattern width when forming a thick film pattern of 10 ⁇ m or more to form a photolithography for the subsequent electrode formation It prevents poor quality and poor appearance by disconnection and peeling of the electrode and protective layer during the process.
  • 7A and 7B are cross-sectional photographs of the thick film pattern formation and the subsequent process according to the present invention.
  • Such a thick film pattern structure and a method of forming the same according to the present invention forms a thick film pattern in a round cover coating method in which a pattern width is expanded in a repeated coating process for forming a thick film pattern, thereby reducing the taper angle in the edge region of the thick film pattern. In other words, it is possible to suppress the occurrence of changes in film thickness, pattern width, and disconnection occurring in subsequent process steps.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

La présente invention concerne une structure de motif à film épais et son procédé de formation, dans lequel une étape de stratification est répétée – ce qui accroît progressivement, pendant la formation, la largeur du motif à film épais qui est en train d'être formé – et ainsi des couches de matériau identiques sont stratifiées, ce qui permet de réduire l'angle de conicité dans une région au niveau du bord du motif, dans lequel toutes les couches ont été stratifiées. Le motif à film épais comprend une couche de revêtement de motif à film épais ayant une largeur de motif quelconque ; et différentes couches de revêtement de motif à film épais qui sont stratifiées dans l'ordre sur la couche de revêtement de motif à film épais, de sorte que la largeur du motif s'accroisse progressivement depuis la région de bord de la couche de revêtement de motif à film épais, le motif à film épais formé par les couches de revêtement de motif à film épais ayant une forme de couvercle rond qui couvre les couches de revêtement à film épais stratifiées à l'avant.
PCT/KR2015/006781 2014-07-09 2015-07-01 Structure de motif à film épais et son procédé de formation WO2016006865A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020140086268A KR102212674B1 (ko) 2014-07-09 2014-07-09 후막 패턴 구조 및 그의 형성 방법
KR10-2014-0086268 2014-07-09

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WO2016006865A1 true WO2016006865A1 (fr) 2016-01-14

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TW (1) TW201611042A (fr)
WO (1) WO2016006865A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002003766A2 (fr) * 2000-06-30 2002-01-10 E. I. Du Pont De Nemours And Company Procede de gravure de circuits a couches epaisses
US6368696B1 (en) * 1997-04-09 2002-04-09 Dai Nippon Printing Co. Patterned thick laminated film forming method and transfer sheet
KR20060048762A (ko) * 2004-06-30 2006-05-18 캐논 가부시끼가이샤 후막 유전체 패턴의 제조방법 및 화상 표시 장치의제조방법
KR100894802B1 (ko) * 2001-06-12 2009-04-24 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 후막 내식막 패턴의 형성방법 및 이에 사용되는 감광성 수지 조성물
KR20130135051A (ko) * 2012-05-30 2013-12-10 주식회사 엘지화학 감광성 수지 조성물 및 상기 감광성 수지 조성물로 제조된 베젤패턴을 포함하는 터치패널 또는 디스플레이 장치

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003195513A (ja) * 2001-09-07 2003-07-09 Canon Inc 部材パターンの製造方法と、電子源及び画像表示装置の製造方法
KR100795063B1 (ko) 2006-06-28 2008-01-17 한국전기연구원 경사형 다층박막 증착 장치 및 그 다층박막의 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6368696B1 (en) * 1997-04-09 2002-04-09 Dai Nippon Printing Co. Patterned thick laminated film forming method and transfer sheet
WO2002003766A2 (fr) * 2000-06-30 2002-01-10 E. I. Du Pont De Nemours And Company Procede de gravure de circuits a couches epaisses
KR100894802B1 (ko) * 2001-06-12 2009-04-24 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 후막 내식막 패턴의 형성방법 및 이에 사용되는 감광성 수지 조성물
KR20060048762A (ko) * 2004-06-30 2006-05-18 캐논 가부시끼가이샤 후막 유전체 패턴의 제조방법 및 화상 표시 장치의제조방법
KR20130135051A (ko) * 2012-05-30 2013-12-10 주식회사 엘지화학 감광성 수지 조성물 및 상기 감광성 수지 조성물로 제조된 베젤패턴을 포함하는 터치패널 또는 디스플레이 장치

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KR102212674B1 (ko) 2021-02-05
KR20160006537A (ko) 2016-01-19
TW201611042A (zh) 2016-03-16

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