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WO2012176527A1 - Cellule solaire cristalline et procédé de production d'une cellule solaire cristalline - Google Patents

Cellule solaire cristalline et procédé de production d'une cellule solaire cristalline Download PDF

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Publication number
WO2012176527A1
WO2012176527A1 PCT/JP2012/059049 JP2012059049W WO2012176527A1 WO 2012176527 A1 WO2012176527 A1 WO 2012176527A1 JP 2012059049 W JP2012059049 W JP 2012059049W WO 2012176527 A1 WO2012176527 A1 WO 2012176527A1
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Prior art keywords
passivation film
etching
etching paste
paste
type
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PCT/JP2012/059049
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English (en)
Japanese (ja)
Inventor
誠二 谷川
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シャープ株式会社
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Priority claimed from JP2011136004A external-priority patent/JP5129369B2/ja
Priority claimed from JP2011136003A external-priority patent/JP5275415B2/ja
Application filed by シャープ株式会社 filed Critical シャープ株式会社
Priority to CN201280030486.2A priority Critical patent/CN103620793B/zh
Publication of WO2012176527A1 publication Critical patent/WO2012176527A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the present invention relates to a crystalline solar battery cell and a method for manufacturing a crystalline solar battery cell.
  • the most manufactured and sold crystalline solar cells have an n-electrode formed on the surface on which sunlight is incident (light-receiving surface) and a p-electrode on the surface opposite to the light-receiving surface (back surface).
  • This is a double-sided electrode type solar cell having a configuration in which is formed.
  • development of a back electrode type solar cell in which an electrode is not formed on the light receiving surface of the crystal solar cell and an n electrode and a p electrode are formed only on the back surface of the crystal solar cell is underway.
  • Patent Document 1 Japanese Patent Publication No. 2010-527147
  • a dielectric layer and a barrier layer are formed in this order on the back surface of the p-type silicon wafer.
  • a double-sided solar cell is described in which a back contact is formed that is electrically connected to the BSF layer on the back through openings provided in the dielectric layer and the barrier layer.
  • the double-sided electrode type solar cell described in Patent Document 1 is manufactured as follows. First, an n-type layer is formed on the surface of a p-type silicon wafer. Next, a dielectric layer and a barrier layer are formed on the p-type silicon wafer. Next, an etching paste is applied on the surface of the barrier layer and heated to form openings in the dielectric layer and the barrier layer.
  • Patent Document 2 Japanese Patent Laid-Open No. 2009-21494
  • an n + -type impurity layer region and a p + -type impurity layer region are formed on the back surface of an n-type silicon substrate.
  • the back electrode type solar cell described in Patent Document 2 is manufactured as follows. First, after forming an n + -type impurity layer region and a p + -type impurity layer region on the back surface of the n-type silicon substrate, a passivation film is formed on the entire back surface of the n-type silicon substrate. Next, an etching paste is applied to a part of the surface of the passivation film, and the passivation film is removed by heating the etching paste. As a result, the n + -type impurity layer region and the p + -type impurity layer region are exposed from the passivation film.
  • a silver paste is applied to the exposed surfaces of the n + -type impurity layer region and the p + -type impurity layer region and fired.
  • an n-type electrode is formed on the n + -type impurity layer region, and a p-type electrode is formed on the p + -type impurity layer region, whereby the back electrode type solar cell described in Patent Document 2 is manufactured. Is done.
  • the above problems are not limited to the back electrode type solar cells, but are also problems of the entire crystal solar cell including the double sided electrode type solar cells.
  • the above problems are not limited to the back electrode type solar cells, but are also problems of the entire crystal solar cell including the double sided electrode type solar cells.
  • an object of the present invention is to provide a crystalline solar battery cell and a method for manufacturing the crystalline solar battery cell that can suppress a decrease in adhesion of the fired electrode even at a low firing temperature. .
  • the present invention relates to a semiconductor substrate, an impurity diffusion region provided on the surface of the semiconductor substrate, a passivation film provided on the surface of the semiconductor substrate, and a protrusion that is a part of the passivation film provided on the impurity diffusion region.
  • a crystal solar battery cell including a recess provided in a portion or a passivation film and an impurity diffusion region and a protrusion, or a fired electrode provided so as to cover the impurity diffusion region and the recess.
  • the thickness of the convex portion is preferably 0.03 ⁇ m or more and 0.5 ⁇ m or less.
  • the depth of the recess is preferably 0.03 ⁇ m or more and 0.5 ⁇ m or less.
  • the present invention also includes a step of forming an impurity diffusion region on the surface of the semiconductor substrate, a step of forming a passivation film on the surface of the semiconductor substrate, a step of applying an etching paste on the passivation film, and a recess in the etching paste.
  • a step of etching a step of etching the passivation film using an etching paste in which depressions are formed, so that a convex portion which is a part of the passivation film remains on the impurity diffusion region, and an impurity diffusion region exposed by etching and It is a manufacturing method of a crystalline solar battery cell including the process of apply
  • the step of forming the recess preferably includes a step of heating the etching paste.
  • the etching paste in the step of heating the etching paste, is preferably heated to a temperature lower than the temperature at which the etching paste starts etching the passivation film.
  • the thickness of the recess of the etching paste is preferably 0.5 ⁇ m or more and 1.5 ⁇ m or less.
  • the thickness of the convex portion that is a part of the passivation film is preferably 0.03 ⁇ m or more and 0.5 ⁇ m or less.
  • the present invention further includes a step of forming an impurity diffusion region on the surface of the semiconductor substrate, a step of forming a passivation film on the surface of the semiconductor substrate, a step of applying an etching paste on the passivation film, and an etching on the passivation film.
  • An etching step a step of applying a conductive paste on the surface of the impurity diffusion region exposed by etching and a surface of the passivation film including the recess, and a step of forming a sintered electrode by baking the conductive paste.
  • a conductive paste on the surface of the impurity diffusion region exposed by etching and a surface of the passivation film including the recess
  • a step of forming a sintered electrode by baking the conductive paste Including crystalline solar cells It is a production method.
  • the step of separating includes a step of heating the etching paste.
  • the etching paste in the step of heating the etching paste, is preferably heated to a temperature lower than the temperature at which the etching paste starts etching the passivation film.
  • a part of the etching paste is separated from the end of the etching paste by a distance of 10 ⁇ m or more and 100 ⁇ m or less.
  • the depth of the recess of the passivation film is preferably 0.03 ⁇ m or more and 0.5 ⁇ m or less.
  • the present invention it is possible to provide a crystalline solar cell and a method for manufacturing the crystalline solar cell that can suppress a decrease in adhesion of the sintered electrode even at a low firing temperature.
  • FIG. (A)-(i) is typical sectional drawing illustrating the manufacturing method of the back electrode type photovoltaic cell of Embodiment 1.
  • FIG. (A)-(d) is typical sectional drawing illustrating the formation process of the contact hole shown in FIG.1 (h), and the formation process of the baking electrode shown in FIG.1 (i).
  • FIG. 3 is a schematic plan view of a part of the back surface of the n-type silicon substrate after the contact hole is formed in the first embodiment.
  • FIG. 6 is a schematic plan view of a part of the back surface of an n-type silicon substrate after contact holes are formed in the second embodiment.
  • FIGS. 5A to 5D are schematic cross-sectional views illustrating the contact hole forming step shown in FIG. 1H and the fired electrode forming step shown in FIG.
  • FIG. 10 is a schematic plan view of a part of the back surface of an n-type silicon substrate after contact holes are formed in the third embodiment.
  • FIG. 10 is a schematic plan view of a part of the back surface of an n-type silicon substrate after contact holes are formed in the fourth embodiment.
  • n-type silicon substrate 1 as an example of a semiconductor substrate is performed.
  • the n-type silicon substrate for example, polycrystalline silicon or single-crystal silicon having n-type conductivity can be used.
  • n-type silicon substrate 1 for example, a substrate obtained by removing slice damage caused by slicing a silicon ingot can be used.
  • the removal of the slice damage can be performed, for example, by etching with a mixed acid of a hydrogen fluoride aqueous solution and nitric acid or an alkaline aqueous solution such as a sodium hydroxide aqueous solution.
  • the size and shape of the n-type silicon substrate 1 are not particularly limited, but the thickness of the n-type silicon substrate 1 can be, for example, 100 ⁇ m or more and 300 ⁇ m or less, and the surface shape of the n-type silicon substrate 1 is, for example, one side
  • the length can be a square shape of 100 mm or more and 150 mm or less.
  • n-type silicon substrate 1 is used as an example of a semiconductor substrate.
  • a semiconductor substrate other than n-type silicon substrate 1 may be used, for example, a p-type silicon substrate or the like.
  • a semiconductor substrate having a conductive type may be used.
  • a process of forming a texture mask 2 on the back surface of the n-type silicon substrate 1 is performed.
  • the texture mask 2 for example, a silicon oxide film, a silicon nitride film, a stacked body of a silicon oxide film and a silicon nitride film, or the like can be used.
  • the texture mask 2 can be formed by a method such as a thermal oxidation method, a plasma CVD (Chemical Vapor Deposition) method, or a sputtering method. Moreover, the texture mask 2 can be formed to a thickness of 300 nm or more and 800 nm or less, for example.
  • a step of forming the texture structure 3 on the surface of the n-type silicon substrate 1 is performed.
  • the step of forming the texture structure 3 includes, for example, using the etching solution obtained by heating a solution obtained by adding isopropyl alcohol to an alkaline aqueous solution such as sodium hydroxide or potassium hydroxide to 70 ° C. or higher and 80 ° C. or lower. This can be done by etching the surface.
  • a process of removing the texture mask 2 on the back surface of the n-type silicon substrate 1 is performed.
  • the step of removing the texture mask 2 can be performed, for example, by immersing the texture mask 2 in a hydrogen fluoride aqueous solution or a phosphoric acid aqueous solution.
  • a step of forming an n-type impurity diffusion region 5 and a p-type impurity diffusion region 6 on the back surface of the n-type silicon substrate 1 is performed.
  • the n-type impurity diffusion region 5 is formed by, for example, vapor phase diffusion using a gas containing an n-type impurity such as phosphorus or coating diffusion in which a solution containing an n-type impurity such as phosphorus is applied and then heated. Can be formed.
  • the p-type impurity diffusion region 6 is formed by, for example, a vapor phase diffusion using a gas containing a p-type impurity such as boron, or a coating diffusion in which a solution containing a p-type impurity such as boron is applied and then heated. Can be formed.
  • the n-type impurity diffusion region 5 and the p-type impurity diffusion region 6 are each formed in a strip shape extending to the front side and / or the back side of the paper surface of FIG.
  • the regions 6 are alternately arranged at predetermined intervals on the back surface of the n-type silicon substrate 1.
  • the n-type impurity diffusion region 5 is not particularly limited as long as it includes an n-type impurity and exhibits n-type conductivity.
  • the p-type impurity diffusion region 6 is not particularly limited as long as it includes a p-type impurity and exhibits p-type conductivity.
  • a step of forming a passivation film 8 on the back surface of the n-type silicon substrate 1 is performed.
  • a silicon oxide film, a silicon nitride film, or a stacked body of a silicon oxide film and a silicon nitride film is formed by a method such as a thermal oxidation method or a plasma CVD method. Can be done.
  • a step of forming an antireflection film 7 on the texture structure 3 of the n-type silicon substrate 1 is performed.
  • the step of forming the antireflection film 7 can be performed by forming a silicon nitride film or the like, for example, by plasma CVD.
  • a process of forming contact holes 9 and contact holes 10 in the passivation film 8 formed on the back surface of the n-type silicon substrate 1 is performed.
  • the contact hole 9 is formed linearly so that the n-type impurity diffusion region 5 is exposed linearly
  • the contact hole 10 is formed linearly so that the p-type impurity diffusion region 6 is exposed linearly.
  • a step of forming the n-type fired electrode 11 on the n-type impurity diffusion region 5 and forming the p-type fired electrode 12 on the p-type impurity diffusion region 6 is performed.
  • the n-type fired electrode 11 is formed so as to be in contact with the n-type impurity diffusion region 5 through the contact hole 9, and the p-type fired electrode 12 is in contact with the p-type impurity diffusion region 6 through the contact hole 10. Formed.
  • the back electrode type solar battery cell of Embodiment 1 is completed.
  • the contact hole forming step shown in FIG. 1 (h) and the fired electrode forming step shown in FIG. 1 (i) are shown in FIGS. It is characterized in that it is performed as shown in the schematic sectional view of 2 (d).
  • a step of applying an etching paste 21 to a location on the surface of the passivation film 8 corresponding to the upper part of the n-type impurity diffusion region 5 is performed.
  • a method such as application by a dispenser, application by inkjet printing, application by screen printing, application by roll coater printing, or application by offset printing can be used.
  • etching paste 21 for example, an etching component capable of etching the passivation film 8 and a component containing water, an organic solvent, a thickener, and the like as components other than the etching component can be used.
  • etching component for example, at least one selected from phosphoric acid, hydrogen fluoride, ammonium fluoride, and ammonium hydrogen fluoride can be used.
  • organic solvent examples include alcohols such as isopropyl alcohol and diethylene glycol; ethers such as ethylene glycol monobutyl ether and diethylene glycol monobutyl ether; esters such as 2,2-butoxyethyl acetate and propylene carbonate; or N-methyl-2-pyrrolidone What contains at least 1 sort (s), such as ketones, etc. can be used.
  • alcohols such as isopropyl alcohol and diethylene glycol
  • ethers such as ethylene glycol monobutyl ether and diethylene glycol monobutyl ether
  • esters such as 2,2-butoxyethyl acetate and propylene carbonate
  • N-methyl-2-pyrrolidone What contains at least 1 sort (s), such as ketones, etc. can be used.
  • a cellulose derivative such as ethyl cellulose or sodium carboxymethyl hydroxyethyl cellulose
  • a polyamide resin such as nylon 6
  • a polymer containing at least one polymer such as polyvinyl pyrrolidone polymerized with vinyl groups
  • a step of forming a recess 21a in the etching paste 21 is performed.
  • the step of forming the recess 21a is not particularly limited, but can be performed, for example, by heating the etching paste 21.
  • the etching paste 21 is heated to a temperature below the temperature at which the etching paste 21 starts etching the passivation film 8.
  • the etching paste 21 can be agglomerated toward the center of the application region of the etching paste 21, so that the recess 21 a where the thickness of the etching paste 21 is locally reduced is formed. It can form suitably.
  • Such a depression 21a can be formed by heating the etching paste 21 to a temperature of 250 ° C. or higher and 400 ° C. or lower, for example.
  • the thickness t of the recess 21a of the etching paste 21 is preferably 0.5 ⁇ m or more and 1.5 ⁇ m or less. In this case, in the process described later, a tendency that a convex part having a suitable height can be formed on the n-type impurity diffusion region 5 is increased.
  • a step of etching the passivation film 8 is performed. Thereby, a contact hole 9 exposing a part of the surface of the n-type impurity diffusion region 5 is formed.
  • the step of etching the passivation film 8 is performed using the etching paste 21 in which the depressions 21 a are formed so that the projections 8 a that are part of the passivation film 8 remain on the n-type impurity diffusion region 5. .
  • Such etching of the passivation film 8 can be performed, for example, by heating the etching paste 21 in which the recess 21 a is formed to a temperature equal to or higher than the temperature at which the etching paste 21 starts etching the passivation film 8.
  • the passivation film 8 can be completely etched in a portion having a predetermined thickness other than the convex portion 8a of the etching paste 21, so that the surface of the n-type impurity diffusion region 5 is exposed.
  • the etching of the passivation film 8 becomes incomplete, and the passivation is formed on the surface of the n-type impurity diffusion region 5.
  • the convex part 8a which is a part of the film 8 remains.
  • the thickness T of the convex portion 8a which is a part of the passivation film 8 is preferably 0.03 ⁇ m or more and 0.5 ⁇ m or less.
  • the thickness T of the convex portion 8a is 0.03 ⁇ m or more, the contact area of the n-type fired electrode 11 tends to be increased, and the thickness T of the convex portion 8a is 0.5 ⁇ m or less. In such a case, there is a tendency that damage to the convex portion 8a due to the convex portion 8a becoming too high can be more effectively suppressed.
  • FIG. 3 shows a schematic plan view of a part of the back surface of n-type silicon substrate 1 after formation of contact hole 9 in the first embodiment.
  • the surface of the n-type impurity diffusion region 5 is exposed, a convex portion 8 a extending linearly on the surface of the n-type impurity diffusion region 5, and the convex portion 8 a
  • a broken line-like convex portion 8a that extends in parallel with a gap and is partially missing is also exposed.
  • the convex portion 8 a is not limited to the shape shown in FIG. 3, and may be formed on a part of the surface of the n-type impurity diffusion region 5.
  • the step of applying the conductive paste can be performed by applying a conductive paste such as a commercially available silver paste by screen printing or the like.
  • a step of forming the n-type fired electrode 11 by firing the conductive paste is performed.
  • the n-type firing electrode 11 is formed by firing the conductive paste by firing the conductive paste at a firing temperature lower than the firing temperature of the conventional double-sided electrode type solar battery cell (for example, about 400 ° C.). It is done by.
  • the passivation film 8 is etched using the etching paste 21 having the depression 21a which is a locally thin portion, thereby allowing passivation.
  • the convex portion 8 a that is a part of the film 8 is left on the surface of the n-type impurity diffusion region 5.
  • a conductive paste is applied on the surface of the convex portion 8a and the n-type impurity diffusion region 5, and then fired to form the n-type fired electrode 11. Therefore, for the n-type fired electrode 11, the contact area between the n-type impurity diffusion region 5 and the passivation film 8 can be increased by the amount of the surface of the convex portion 8a. Thereby, even when the firing temperature of the conductive paste at the time of forming the n-type fired electrode 11 is low, the adhesion of the n-type fired electrode 11 can be improved. Separation from the silicon substrate 1 can be effectively prevented.
  • Embodiment 2 the manufacturing method of the back surface electrode type photovoltaic cell of Embodiment 2 which is another example of the manufacturing method of the crystalline solar cell of this invention is demonstrated.
  • the manufacturing method of the back electrode type solar cell of the second embodiment is characterized in that the shapes of the contact hole 9 and the convex portion 8a are different from those of the first embodiment.
  • FIG. 4 shows a schematic plan view of a part of the back surface of the n-type silicon substrate 1 after the formation of the contact hole 9 in the second embodiment.
  • the contact hole 9 is formed in a circular shape, and the convex portion 8a disposed inside the contact hole 9 is also formed in a circular shape.
  • the contact area between the n-type impurity diffusion region 5 and the passivation film 8 is about the surface of the convex portion 8a. Can be increased.
  • Embodiment 2 even when the firing temperature of the conductive paste when forming the n-type fired electrode 11 is low, the adhesion of the n-type fired electrode 11 can be improved. Peeling of the fired electrode 11 from the n-type silicon substrate 1 can be effectively prevented.
  • the circular contact hole 9 and the convex portion 8a are formed by applying the etching paste 21 on the passivation film 8 and forming a part of the etching paste 21 into a circular recess 21a with a reduced thickness. Can do.
  • Embodiment 3 the manufacturing method of the back surface electrode type photovoltaic cell of Embodiment 3 which is another example of the manufacturing method of the crystalline solar cell of this invention is demonstrated.
  • the contact hole forming step shown in FIG. 1 (h) and the firing electrode forming step shown in FIG. 1 (i) are shown in FIGS. It is characterized in that it is performed as shown in the schematic sectional view of FIG.
  • a step of applying an etching paste 21 to a location on the surface of the passivation film 8 corresponding to the upper part of the n-type impurity diffusion region 5 is performed.
  • a method such as application by a dispenser, application by inkjet printing, application by screen printing, application by roll coater printing, or application by offset printing can be used.
  • etching paste 21 for example, an etching component capable of etching the passivation film 8 and a component containing water, an organic solvent, a thickener, and the like as components other than the etching component can be used.
  • etching component for example, at least one selected from phosphoric acid, hydrogen fluoride, ammonium fluoride, and ammonium hydrogen fluoride can be used.
  • organic solvent examples include alcohols such as isopropyl alcohol and diethylene glycol; ethers such as ethylene glycol monobutyl ether and diethylene glycol monobutyl ether; esters such as 2,2-butoxyethyl acetate and propylene carbonate; or N-methyl-2-pyrrolidone What contains at least 1 sort (s), such as ketones, etc. can be used.
  • alcohols such as isopropyl alcohol and diethylene glycol
  • ethers such as ethylene glycol monobutyl ether and diethylene glycol monobutyl ether
  • esters such as 2,2-butoxyethyl acetate and propylene carbonate
  • N-methyl-2-pyrrolidone What contains at least 1 sort (s), such as ketones, etc. can be used.
  • a cellulose derivative such as ethyl cellulose or sodium carboxymethyl hydroxyethyl cellulose
  • a polyamide resin such as nylon 6
  • a polymer containing at least one polymer such as polyvinyl pyrrolidone polymerized with vinyl groups
  • a step of scattering a part 21b of the etching paste 21 on at least a part of the peripheral region of the etching paste 21 on the passivation film 8 is performed.
  • the step of scattering the part 21b of the etching paste 21 is not particularly limited, but can be performed by, for example, heating the etching paste 21.
  • the etching paste 21 is heated to a temperature below the temperature at which the etching paste 21 starts etching the passivation film 8.
  • a part 21b of the etching paste 21 becomes at least a part of the peripheral area of the etching paste 21 in the process where the etching paste 21 aggregates in the central part of the application region of the etching paste 21. Scatter.
  • Such scattering of the part 21b of the etching paste 21 can be performed, for example, by heating the etching paste 21 to a temperature of 250 ° C. or higher and 400 ° C. or lower.
  • the peripheral region where the part 21b of the etching paste 21 scatters is not particularly limited as long as it is a region around the etching paste 21, but the part 21b of the etching paste 21 is 10 ⁇ m or more and 100 ⁇ m or less from the end of the etching paste 21. It is preferable to scatter at a position separated by a distance d.
  • a part 21b of the etching paste 21 is scattered at a position separated from the end of the etching paste 21 by a distance d of 10 ⁇ m or more, a recess described later is provided at a position that is not too close to the contact hole 9 in a process described later.
  • the effect of improving the adhesion of the fired electrode due to the formation of the recesses to be described later in the passivation film 8 tends to be more effectively expressed.
  • a part 21b of the etching paste 21 is scattered at a position separated from the end portion of the etching paste 21 by a distance d of 100 ⁇ m or less, it is described later at a position that is not too far from the contact hole 9 in a process described later. Since the recessed part to perform can be formed, it exists in the tendency which can express the adhesive improvement effect of a baking electrode more effectively.
  • a step of etching the passivation film 8 is performed. Thereby, a contact hole 9 exposing a part of the surface of the n-type impurity diffusion region 5 is formed.
  • the passivation film 8 is completely etched in the portion of the passivation film 8 on which the etching paste 21 is placed, and the contact hole 9 is formed.
  • the amount of the etching paste is small and the etching of the passivation film 8 is incomplete, so that only part of the passivation film 8 is removed.
  • the recess 22 is formed.
  • the depth T of the recess 22 which is a part of the passivation film 8 is preferably 0.03 ⁇ m or more and 0.5 ⁇ m or less.
  • the contact area of the n-type fired electrode 11 tends to be increased, and when the depth T of the recess 22 is 0.5 ⁇ m or less. Tends to more effectively suppress damage to the passivation film 8 due to the recess 22 becoming too deep.
  • FIG. 6 shows a schematic plan view of a part of the back surface of the n-type silicon substrate 1 after the formation of the contact hole 9 in the first embodiment.
  • the surface of the n-type impurity diffusion region 5 is exposed, and the passivation film 8 outside the n-type impurity diffusion region 5 is formed with a recess 22 extending linearly,
  • the passivation film 8 on the opposite side across the recess 22 and the n-type impurity diffusion region 5 is formed with a dashed-line recess 22 extending parallel to the recess 22.
  • the recess 22 is not limited to the shape shown in FIG. 6, and may be formed on a part of the surface of the passivation film 8.
  • the step of applying the conductive paste can be performed by applying a conductive paste such as a commercially available silver paste by screen printing or the like.
  • a step of forming the n-type fired electrode 11 by firing the conductive paste is performed.
  • the n-type firing electrode 11 is formed by firing the conductive paste by firing the conductive paste at a firing temperature lower than the firing temperature of the conventional double-sided electrode type solar battery cell (for example, about 400 ° C.). It is done by.
  • a part 21 b of the etching paste 21 is scattered on the passivation film 8 to etch the passivation film 8.
  • a contact hole 9 is formed in the portion to expose the surface of the n-type impurity diffusion region 5, and a recess 22 is formed in the region of the passivation film 8 outside the n-type impurity diffusion region 5.
  • a conductive paste is applied on the surface of the n-type impurity diffusion region 5 and on the surface of the passivation film 8 including the recesses 22 and then fired to form the n-type fired electrode 11.
  • the contact area between the n-type sintered electrode 11 and the passivation film 8 can be increased by the surface of the recess 22. Therefore, even when the firing temperature of the conductive paste at the time of forming the n-type fired electrode 11 is low, the adhesion of the n-type fired electrode 11 can be improved. Separation from the silicon substrate 1 can be effectively prevented.
  • the etching paste 21 may be separated from the etching paste 21 by, for example, agglomerating the etching paste 21 so that the part 21b of the etching paste 21 remains by heating or the like.
  • the method for separating the part 21b of the paste 21 is not particularly limited.
  • Embodiment 4 the manufacturing method of the back surface electrode type photovoltaic cell of Embodiment 4 which is another example of the manufacturing method of the crystalline solar cell of this invention is demonstrated.
  • the method for manufacturing a back electrode type solar cell according to the fourth embodiment is characterized in that the shapes of the contact hole 9 and the recess 22 are different from those of the third embodiment.
  • FIG. 7 shows a schematic plan view of a part of the back surface of the n-type silicon substrate 1 after the formation of the contact hole 9 in the fourth embodiment.
  • the contact hole 9 is formed in a circular shape, and the concave portion 22 disposed in the region of the passivation film 8 outside the contact hole 9 is also formed in a circular shape.
  • the contact area of the n-type fired electrode 11 with the passivation film 8 can be increased by the amount of the surface of the recess 22.
  • Embodiment 4 even when the firing temperature of the conductive paste when forming the n-type fired electrode 11 is low, the adhesion of the n-type fired electrode 11 can be improved. Peeling of the fired electrode 11 from the n-type silicon substrate 1 can be effectively prevented.
  • the circular contact hole 9 and the concave portion 22 respectively apply the etching paste 21 in a circular shape on the passivation film 8, and apply a part 21 b of the etching paste 21 to the peripheral region outside the etching paste 21. It can be formed by scattering into a shape.
  • the present invention can be used for a crystal solar cell and a method for manufacturing the crystal solar cell, and in particular, a crystal solar cell and a crystal solar in which a fired electrode is formed by removing a part of a passivation film with an etching paste It can utilize suitably for the manufacturing method of a battery cell.
  • n-type silicon substrate 1 n-type silicon substrate, 2 texture mask, 3 texture structure, 5 n-type impurity diffusion region, 6 p-type impurity diffusion region, 7 antireflection film, 8 passivation film, 8a convex part, 9,10 contact hole, 11 n-type Firing electrode, 12 p-type firing electrode, 21 etching paste, 21a depression, 21b part of etching paste, 22 recesses.

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  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une cellule solaire cristalline équipée des éléments suivants : des zones de diffusion d'impuretés (5, 6) disposées sur la surface d'un substrat semi-conducteur (1) ; un partie en méplat (8a) qui fait partie d'une pellicule de passivation (8) disposée au-dessus des zones de diffusion d'impuretés (5, 6) ou une partie en sillon (22) disposée sur la pellicule de passivation (8) ; et des électrodes (11, 12) cuites disposées de manière à recouvrir les zones de diffusion d'impuretés (5, 6) et la partie en méplat (8a) ou les zones de diffusion d'impuretés (5, 6) et la partie en sillon (22) ; et son procédé de production.
PCT/JP2012/059049 2011-06-20 2012-04-03 Cellule solaire cristalline et procédé de production d'une cellule solaire cristalline WO2012176527A1 (fr)

Priority Applications (1)

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CN201280030486.2A CN103620793B (zh) 2011-06-20 2012-04-03 结晶太阳能电池单元及结晶太阳能电池单元的制造方法

Applications Claiming Priority (4)

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JP2011-136003 2011-06-20
JP2011-136004 2011-06-20
JP2011136004A JP5129369B2 (ja) 2011-06-20 2011-06-20 結晶太陽電池セルおよび結晶太陽電池セルの製造方法
JP2011136003A JP5275415B2 (ja) 2011-06-20 2011-06-20 結晶太陽電池セルおよび結晶太陽電池セルの製造方法

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WO2012176527A1 true WO2012176527A1 (fr) 2012-12-27

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001267610A (ja) * 2000-03-17 2001-09-28 Hitachi Ltd 太陽電池
JP2007088254A (ja) * 2005-09-22 2007-04-05 Sharp Corp 裏面接合型太陽電池の製造方法
JP2009021494A (ja) * 2007-07-13 2009-01-29 Sharp Corp 太陽電池の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100499035C (zh) * 2003-10-03 2009-06-10 株式会社半导体能源研究所 半导体器件的制造方法
JP5646950B2 (ja) * 2009-11-06 2014-12-24 東京応化工業株式会社 マスク材組成物、および不純物拡散層の形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001267610A (ja) * 2000-03-17 2001-09-28 Hitachi Ltd 太陽電池
JP2007088254A (ja) * 2005-09-22 2007-04-05 Sharp Corp 裏面接合型太陽電池の製造方法
JP2009021494A (ja) * 2007-07-13 2009-01-29 Sharp Corp 太陽電池の製造方法

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