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WO2011108365A1 - Composition pour la formation d'un film de sous-couche de réserve qui contient un dérivé de fullerène - Google Patents

Composition pour la formation d'un film de sous-couche de réserve qui contient un dérivé de fullerène Download PDF

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Publication number
WO2011108365A1
WO2011108365A1 PCT/JP2011/053386 JP2011053386W WO2011108365A1 WO 2011108365 A1 WO2011108365 A1 WO 2011108365A1 JP 2011053386 W JP2011053386 W JP 2011053386W WO 2011108365 A1 WO2011108365 A1 WO 2011108365A1
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Prior art keywords
resist underlayer
underlayer film
forming composition
resist
bis
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PCT/JP2011/053386
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English (en)
Japanese (ja)
Inventor
徹也 新城
圭祐 橋本
博明 奥山
康志 境田
雅一 加藤
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日産化学工業株式会社
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Priority to JP2012503058A priority Critical patent/JP5757286B2/ja
Publication of WO2011108365A1 publication Critical patent/WO2011108365A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Definitions

  • the present invention relates to a composition for forming a resist underlayer film used in a lithography process when manufacturing a semiconductor device.
  • fullerene derivatives having higher solubility in organic solvents than C 60 fullerene have been synthesized.
  • a solution in which such a fullerene derivative is dissolved in an organic solvent a thin film can be easily formed on a substrate. Therefore, application of fullerene derivatives to n-type organic thin film transistors, solar cells, and the like has been studied.
  • Patent Document 1 describes a resist underlayer film forming composition prepared using, for example, a fullerene derivative manufactured by Frontier Carbon Co., Ltd. as a fullerene derivative.
  • Patent Document 2 listed below describes a photoresist composition using a diethyl malonate polyadduct or a malonic acid-di-tert-butyl multiadduct as a fullerene derivative.
  • a fullerene derivative as described in Patent Document 2 and a method for producing the fullerene derivative are also described in Patent Document 3 below.
  • Control of the dry etching rate is important for the resist underlayer film.
  • a resist underlayer film having a high carbon content since fullerene itself is a material composed of only carbon atoms, the carbon content is 100% by mass, but there is a problem that it is difficult to dissolve in a solvent. This problem can be solved by using a fullerene derivative having solubility in a solvent. However, such fullerene derivatives usually have a lower carbon content than fullerenes without a modifying group.
  • the fullerene derivative malonic acid-di-tert-butyl multi-adduct used in Patent Document 2 decomposes the adduct (modifying group) by heating to produce a carboxyl group. That is, by applying a solution containing a fullerene derivative having the adduct (modifying group) and baking at a temperature at which the adduct (modifying group) decomposes, the carbon content of the formed film is lower than before decomposition. Can be increased.
  • the resist underlayer film is required not to be dissolved in a solvent contained in the solution to be applied and to be applied uniformly without unevenness when an intermediate layer or a resist film is formed thereon by a coating method.
  • the present invention has an object to provide a composition that can form a resist underlayer film having high etching resistance (low dry etching rate), excellent solvent resistance, and excellent applicability of a solution to be applied thereon.
  • the first aspect of the present invention is: The following formula (1) for one fullerene molecule: (In the formula, each R independently represents an alkyl group having 1 to 10 carbon atoms.)
  • a resist underlayer film forming composition comprising a fullerene derivative to which 1 to 6 molecules of malonic acid diester represented by formula (I) is added, an epoxy compound, and a solvent.
  • the second aspect of the present invention is: Applying the resist underlayer film forming composition on a substrate, and baking at least once at a temperature of 180 ° C. to 400 ° C. to form a resist underlayer film; Applying the intermediate layer forming composition on the resist underlayer film and baking to form a silicon-containing intermediate layer; and Forming a resist film on the intermediate layer; It is a method for forming a resist pattern, comprising at least exposing and developing the resist film.
  • the resist underlayer film forming composition of the present invention contains an epoxy compound together with a fullerene derivative that decomposes an adduct (modifying group) by heating, the crosslinking reaction proceeds by baking at a predetermined temperature.
  • the resist underlayer film to be formed has a high dry etching resistance, a solvent resistance, and a surface with a good solution coating property.
  • the fullerene derivative contained in the resist underlayer film forming composition of the present invention is, for example, the following formula (2) in which R in the formula (1) is a branched alkyl group (3 or more carbon atoms): (In the formula, n represents an integer of 1 to 6.) It is represented by However, the fullerene derivative represented by the formula (2) is not specified.
  • the fullerene derivative contained in the resist underlayer film forming composition of the present invention contains, as a main component, a 4-adduct obtained by adding 4 molecules of a malonic acid diester represented by the formula (1) to 1 molecule of fullerene. it can.
  • the malonic diester is added, not only the C 60, C 70, or C 60 can use a mixture of the C 70, also used mixtures containing higher fullerenes in addition to C 60 and C 70
  • You can also Higher order fullerene is defined herein as a generic term for fullerenes having more than 70 carbon atoms (for example, C 76 , C 82 , C 84 , C 90 and C 96 ). By using the said mixture, cost can be reduced compared with the case where C60 or C70 is used.
  • the epoxy compound contained in the resist underlayer film forming composition of the present invention a compound having at least two epoxy groups or oxirane rings is preferable.
  • the epoxy compound is included in the range of, for example, 0.1 to 500% by mass, preferably 1 to 100% by mass with respect to the fullerene derivative.
  • the resist underlayer film forming composition of the present invention may further contain an acid catalyst or a base catalyst.
  • the acid catalyst include onium salts, diazomethane derivatives, glyoxime derivatives, bissulfone derivatives, ⁇ -ketosulfone derivatives, disulfone derivatives, nitrobenzyl sulfonate derivatives, sulfonate ester derivatives, and sulfonate ester derivatives of N-hydroxyimide compounds.
  • the base catalyst include imidazole compounds, quaternary ammonium salts, phosphonium salts, amine compounds, aluminum chelate compounds, and organic phosphine compounds.
  • 2-methylimidazole, 2-ethyl-4-methylimidazole, 1,8-diaza-bicyclo (5,4,0) undecene-7 trimethylamine, benzyldimethylamine, triethylamine, dimethylbenzylamine, 2 , 4,6-trisdimethylaminomethylphenol and other amine compounds and salts thereof, quaternary ammonium salts such as tetramethylammonium chloride, benzyltrimethylammonium bromide, benzyltriethylammonium chloride, tetrabutylammonium bromide, aluminum chelate, tetra-n And organic phosphine compounds such as -butylphosphonium benzotriazolate and tetra-n-butylphosphonium-o, o-diethyl phosphorodithioate.
  • quaternary ammonium salts such as tetramethylammonium chloride, benzyltrimethylam
  • the acid catalyst or base catalyst is contained in the fullerene derivative in an amount of, for example, 0.1 to 50% by mass, preferably 0.5 to 40% by mass, and the decomposition reaction of the fullerene derivative adduct (modifying group) and It promotes the crosslinking reaction.
  • onium salts examples include Tetramethylammonium trifluoromethanesulfonate, tetramethylammonium nonafluorobutanesulfonate, triethylammonium nonafluorobutanesulfonate, pyridinium nonafluorobutanesulfonate, triethylammonium camphorsulfonate, diphenyliodonium camphorsulfonate, camphorsulfonic acid (p- tert-Butoxyphenyl) phenyliodonium, camphorsulfonic acid bis (p-tert-butoxyphenyl) iodonium, trifluoromethanesulfonic acid bis (p-tert-butoxyphenyl) iodonium, nonafluorobutanesulfone (p-tert-butoxyphenyl) phenyl Iodonium, nonafluorobutanesulfone bis (p-tert-butoxyphen
  • diazomethane derivatives examples include bis (benzenesulfonyl) diazomethane, bis (p-toluenesulfonyl) diazomethane, bis (xylenesulfonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane, bis (cyclopentylsulfonyl) diazomethane, bis (n-butylsulfonyl) diazomethane, bis (isobutylsulfonyl) ) Diazomethane, bis (sec-butylsulfonyl) diazomethane, bis (n-propylsulfonyl) diazomethane, bis (isopropylsulfonyl) diazomethane, bis (tert-butylsulfonyl) diazomethane, bis (n-amylsulfonyl) diazomethane,
  • Examples of glyoxime derivatives are shown below.
  • bissulfone derivatives are shown below.
  • Examples of ⁇ -ketosulfone derivatives are shown below.
  • disulfone derivatives examples include diphenyl disulfone derivatives and dicyclohexyl disulfone derivatives.
  • Nitrobenzyl sulfonate derivatives are exemplified below. 2,6-dinitrobenzyl p-toluenesulfonate and 2,4-dinitrobenzyl p-toluenesulfonate. Examples of the sulfonate ester derivative are shown below. 1,2,3-tris (methanesulfonyloxy) benzene, 1,2,3-tris (trifluoromethanesulfonyloxy) benzene, and 1,2,3-tris (p-toluenesulfonyloxy) benzene.
  • N-hydroxysuccinimide methanesulfonic acid ester N-hydroxysuccinimide trifluoromethanesulfonic acid ester
  • N-hydroxysuccinimide ethanesulfonic acid ester N-hydroxysuccinimide 1-propanesulfonic acid ester
  • N-hydroxysuccinimide 2-propanesulfonic acid ester N-hydroxysuccinimide 1-pentanesulfonic acid ester
  • N-hydroxysuccinimide 1-octanesulfonic acid ester N-hydroxysuccinimide p-toluenesulfonic acid ester
  • N-hydroxysuccinimide p-methoxybenzenesulfonic acid ester N-hydroxysuccinimide 2 -Chloroethane sulfonate
  • N-hydroxysuccinimide benzene sulfonate N-hydroxysuccinimide 2 -Chloroethane sulfonate
  • the resist underlayer film forming composition of the present invention can further contain a surfactant.
  • a surfactant for example, Ftop (registered trademark) EF301, EF303, EF352 (manufactured by Mitsubishi Materials Electronic Chemicals Co., Ltd.), MegaFuck (registered trademark) F171, F173, R173 (manufactured by DIC Corporation), Fluorard FC430, FC431 (Sumitomo 3M Co., Ltd.), Asahi Guard (registered trademark) AG710, Surflon (registered trademark) S-382, SC101, SC102, SC103, SC104, SC105, SC106 (Asahi Glass Co., Ltd.) Fluorosurfactant such as a company) and organosiloxane polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.).
  • One kind selected from these surfactants may be added, or two or more kinds may be added in combination.
  • the resist underlayer film forming composition of the present invention is used in a uniform solution state in which each of the above components is dissolved in a solvent.
  • solvents include propylene glycol monomethyl ether acetate, cyclohexanone, 2-heptanone, ethyl lactate, o-xylene, toluene, o-dichlorobenzene, propylene glycol monomethyl ether, propylene glycol monopropyl ether, 1-methyl-2 -Pyrrolidone and ⁇ -butyrolactone can be used.
  • One kind selected from these solvents may be used, or two or more kinds may be used in combination.
  • the prepared resist underlayer film forming composition is preferably used after being filtered using, for example, a filter having a pore size smaller than 0.1 ⁇ m or 0.1 ⁇ m.
  • the resist underlayer film-forming composition after filtration is excellent in long-term storage stability at room temperature.
  • Substrate for example, a semiconductor substrate such as silicon on which a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed, a silicon nitride substrate, a quartz substrate, a glass substrate (including non-alkali glass, low alkali glass, and crystallized glass)
  • the resist underlayer film forming composition of the present invention is applied onto a glass substrate on which an ITO film is formed by an appropriate application method such as a spinner or a coater, and then baked using a heating means such as a hot plate. By doing so, a resist underlayer film is formed.
  • the optimum value is selected from the range of temperature: 180 ° C. to 400 ° C. and time: 0.3 minutes to 10 minutes.
  • baking may be performed again at a temperature higher than the temperature, for example, 300 ° C. to 400 ° C.
  • the adduct (modifying group) of the fullerene derivative contained in the applied composition is decomposed to generate a carboxyl group. It is presumed that the adduct (modifying group) is further decomposed by baking at 300 ° C. to 400 ° C., and the fullerene derivative undergoes a crosslinking reaction.
  • the thickness of the resist underlayer film to be formed is 0.01 ⁇ m to 3.0 ⁇ m, for example, 0.03 ⁇ m to 1.0 ⁇ m, or 0.05 ⁇ m to 0.5 ⁇ m.
  • the intermediate layer forming composition is applied onto the resist underlayer film by an appropriate application method such as a spinner or a coater.
  • the intermediate layer forming composition include a solution containing one or two or more alkoxysilane hydrolyzates and / or hydrolysis condensates and necessary additives, or a commercially available polysilane and necessary additives.
  • the silicon-containing intermediate layer is formed by baking using a heating means such as a hot plate.
  • a heating means such as a hot plate.
  • an optimum value is selected from the range of temperature: 180 ° C. to 300 ° C. and time: 0.3 minutes to 10 minutes.
  • the resist film is formed by a general method, that is, by applying a resist solution onto the intermediate layer and baking.
  • the resist solution to be used is not particularly limited.
  • Rohm and Haas Electronic Materials trade name: APEX-E, Sumitomo Chemical Co., trade name: PAR710, and Shin-Etsu Chemical Co., Ltd.
  • Product name: SEPR430 etc. are mentioned.
  • a photomask reticle
  • a KrF excimer laser, an ArF excimer laser, and EUV extreme ultraviolet
  • PEB Post Exposure Bake
  • an alkaline developer When using a positive resist solution, an alkaline developer is used for development.
  • alkaline developers include aqueous solutions of alkali metal hydroxides such as potassium hydroxide and sodium hydroxide, aqueous solutions of quaternary ammonium hydroxides such as tetramethylammonium hydroxide, tetraethylammonium hydroxide and choline, ethanolamine, and propyl.
  • the amine aqueous solution include amines and ethylenediamine.
  • a surfactant can be added to these developers.
  • the development conditions are appropriately selected from a development temperature of 5 ° C. to 50 ° C. and a development time of 10 seconds to 300 seconds.
  • development can be easily performed at room temperature using a 2.38 mass% aqueous tetramethylammonium hydroxide solution that is widely used for developing photoresists.
  • the reaction layer (organic phase) was wash
  • the obtained organic phase was washed twice with 100 cm 3 of 1N sulfuric acid aqueous solution and then washed three times with 200 cm 3 of pure water.
  • the solvent (1,2,4-trimethylbenzene) was distilled off under reduced pressure to obtain 9.50 g of a reddish brown solid.
  • the obtained solid was fractionated with a mixed solvent of n-hexane and ethyl acetate by silica gel chromatography to obtain a fullerene derivative (malonic acid-di-tert-butyl ester adduct).
  • Example 1 To 1.0 g of the fullerene derivative obtained in Synthesis Example 1, 0.15 g of an epoxy compound represented by the formula (3-a) (trade name: YH434L, manufactured by Tohto Kasei Co., Ltd.), Megafac as a surfactant [registered trademark] ] 0.001 g of R-30 (DIC Corporation) was mixed and dissolved in 7.0 g of propylene glycol monomethyl ether acetate to obtain a solution. Then, it filtered using the polyethylene micro filter with a hole diameter of 0.10 micrometer, and also filtered using the polyethylene micro filter with the hole diameter of 0.05 micrometer, and prepared the resist underlayer film forming composition solution.
  • 3-a an epoxy compound represented by the formula (3-a)
  • Megafac as a surfactant [registered trademark] ] ] 0.001 g of R-30 (DIC Corporation) was mixed and dissolved in 7.0 g of propylene glycol monomethyl ether acetate to obtain a solution.
  • Example 2 To 1.0 g of the fullerene derivative obtained in Synthesis Example 1, 0.3 g of the epoxy compound used in Example 1 (trade name: YH434L, manufactured by Tohto Kasei Co., Ltd.), Megafac [registered trademark] R-30 as a surfactant 0.001 g (manufactured by DIC Corporation) was mixed and dissolved in 7.0 g of propylene glycol monomethyl ether acetate to obtain a solution. Then, it filtered using the polyethylene micro filter with a hole diameter of 0.10 micrometer, and also filtered using the polyethylene micro filter with the hole diameter of 0.05 micrometer, and prepared the resist underlayer film forming composition solution. In this example, the mass of the epoxy compound used is different from that of Example 1 described above.
  • Example 3 To 1.0 g of the fullerene derivative obtained in Synthesis Example 1, 0.1 g of an epoxy compound represented by the formula (3-b) (manufactured by Daicel Chemical Industries, Ltd., trade name: GT401), Megafac as a surfactant [Registered] Trademark] 0.001 g of R-30 (manufactured by DIC Corporation) was mixed and dissolved in 7.0 g of propylene glycol monomethyl ether acetate to obtain a solution. Then, it filtered using the polyethylene micro filter with a hole diameter of 0.10 micrometer, and also filtered using the polyethylene micro filter with the hole diameter of 0.05 micrometer, and prepared the resist underlayer film forming composition solution.
  • an epoxy compound represented by the formula (3-b) manufactured by Daicel Chemical Industries, Ltd., trade name: GT401
  • Megafac as a surfactant
  • R-30 manufactured by DIC Corporation
  • Example 4 To 1.0 g of the fullerene derivative obtained in Synthesis Example 1, 0.2 g of an epoxy compound represented by the formula (3-c) (manufactured by Mitsubishi Gas Chemical Co., Ltd., trade name: TETRAD-C), Megafac as a surfactant [Registered Trademark] 0.001 g of R-30 (manufactured by DIC Corporation) was mixed and dissolved in 7.0 g of propylene glycol monomethyl ether acetate to obtain a solution. Then, it filtered using the polyethylene micro filter with a hole diameter of 0.10 micrometer, and also filtered using the polyethylene micro filter with the hole diameter of 0.05 micrometer, and prepared the resist underlayer film forming composition solution.
  • 3-c an epoxy compound represented by the formula (3-c)
  • TETRAD-C trade name: TETRAD-C
  • Megafac as a surfactant
  • R-30 manufactured by DIC Corporation
  • Example 5 To 1.0 g of the fullerene derivative obtained in Synthesis Example 1, 0.3 g of an epoxy compound represented by the formula (3-d) (manufactured by DIC Corporation, trade name: HP-4700), Megafac as a surfactant [Registered] Trademark] 0.001 g of R-30 (manufactured by DIC Corporation) was mixed and dissolved in 7.0 g of propylene glycol monomethyl ether acetate to obtain a solution. Then, it filtered using the polyethylene micro filter with a hole diameter of 0.10 micrometer, and also filtered using the polyethylene micro filter with the hole diameter of 0.05 micrometer, and prepared the resist underlayer film forming composition solution.
  • an epoxy compound represented by the formula (3-d) manufactured by DIC Corporation, trade name: HP-4700
  • Megafac as a surfactant [Registered] Trademark] 0.001 g of R-30 (manufactured by DIC Corporation) was mixed and dissolved in 7.0 g of propylene glyco
  • Example 6 To 1.0 g of the fullerene derivative obtained in Synthesis Example 1, 0.15 g of the epoxy compound represented by the above formula (3-a) (manufactured by Tohto Kasei Co., Ltd., trade name: YH434L), Megafac as a surfactant [Registered] Trademark] 0.001 g of R-30 (DIC Corporation) and 0.05 g of pyridinium p-toluenesulfonate as a catalyst were mixed and dissolved in 7.0 g of propylene glycol monomethyl ether acetate to obtain a solution. Then, it filtered using the polyethylene micro filter with a hole diameter of 0.10 micrometer, and also filtered using the polyethylene micro filter with the hole diameter of 0.05 micrometer, and prepared the resist underlayer film forming composition solution.
  • Each resist underlayer film forming composition solution (including an epoxy compound) prepared in Examples 1 to 6 was applied onto a silicon wafer by a spinner. Heating was performed on a hot plate at a temperature of 240 ° C. for 1 minute to form a resist underlayer film (film thickness 0.2 ⁇ m). Then, these resist underlayer films were immersed in ethyl lactate, propylene glycol monomethyl ether and propylene glycol monomethyl ether acetate, which are solvents used for the photoresist, and confirmed to be insoluble in the solvent.
  • the resist underlayer film forming composition solution prepared in Comparative Example 1 was applied onto a silicon wafer by a spinner. Heating was performed on a hot plate at a temperature of 240 ° C. for 1 minute to form a resist underlayer film (film thickness 0.2 ⁇ m).
  • this resist underlayer film was immersed in ethyl lactate, propylene glycol monomethyl ether and propylene glycol monomethyl ether acetate, which are solvents used for the photoresist, it was confirmed that it was dissolved in the solvent.
  • an intermediate layer forming material for example, poly It is difficult to form a film containing a composition containing siloxane or polysilane.
  • Each resist underlayer film forming composition prepared in Examples 1 to 6 and Comparative Example 1 was applied onto a silicon wafer by a spinner. Heating was performed on a hot plate at a temperature of 240 ° C. for 1 minute to form a resist underlayer film (film thickness 0.2 ⁇ m). These resist underlayer films were subjected to a refractive index (n value) and optical absorption coefficient (k value, attenuation coefficient) at a wavelength of 193 nm using a spectroscopic ellipsometer (manufactured by JA Woollam, VUV-VASE VU-302). (Also called). The results are shown in Table 1 below.
  • Table 1 The results shown in Table 1 indicate that when a resist underlayer film obtained from the resist underlayer film forming composition according to the present invention is used in combination with a silicon-containing intermediate layer, the reflection of light having a wavelength of 193 nm from the substrate is reduced. It has n value and k value which can be.
  • a solution obtained by dissolving 0.7 g of phenol novolak resin in 10 g of propylene glycol monomethyl ether was applied onto a silicon wafer by a spinner and heated at a temperature of 240 ° C. for 1 minute to form a phenol novolak resin film.
  • the dry etching rate was measured using CF 4 gas as an etching gas, and each of the resist underlayer films formed from the resist underlayer film forming compositions of Examples 1 to 6 and Comparative Example 1 was measured. Comparison with dry etching rate was performed. The results are shown in Table 2 below.
  • the dry etching rate ratio in Table 2 is the dry etching rate of each resist underlayer film (resist underlayer film) / (phenol novolac resin film) with respect to the dry etching rate of the phenol novolak resin film.
  • the resist underlayer film obtained from the resist underlayer film forming composition containing the catalyst prepared in Example 6 is the resist obtained from the resist underlayer film forming composition prepared in other Examples. Compared to the lower layer film, the dry etching rate ratio was small. This result has shown that the dry etching tolerance of the film

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)

Abstract

L'invention porte sur une composition qui permet la formation d'un film de sous-couche de réserve, ayant une grande résistance à la gravure (un faible taux de gravure sèche) et une excellente résistance aux solvants. L'invention porte plus précisément sur une composition destinée à former un film de sous-couche de réserve, qui comprend un dérivé de fullerène dans lequel une à six molécules d'un diester de l'acide malonique, représenté par la formule (1) (dans laquelle les radicaux R représentent chacun indépendamment des autres un groupe alkyle ayant 1 à 10 atomes de carbone) sont ajoutés pour chaque molécule de fullerène, un composé ayant au moins deux groupes époxy ou noyaux oxirane, et un solvant.
PCT/JP2011/053386 2010-03-01 2011-02-17 Composition pour la formation d'un film de sous-couche de réserve qui contient un dérivé de fullerène WO2011108365A1 (fr)

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JP2017533464A (ja) * 2014-10-08 2017-11-09 アレックス フィリップ グラハム ロビンソンＡｌｅｘ Ｐｈｉｌｉｐ Ｇｒａｈａｍ ＲＯＢＩＮＳＯＮ スピンオンハードマスク材料
WO2019054420A1 (fr) * 2017-09-13 2019-03-21 日産化学株式会社 Composition de revêtement de substrat étagé contenant un composé ayant un groupe fonctionnel durcissable
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WO2022196673A1 (fr) * 2021-03-16 2022-09-22 日産化学株式会社 Composition de formation de film de sous-couche de réserve contenant un motif de naphtalène
JP2022166033A (ja) * 2019-05-31 2022-11-01 ローム アンド ハース エレクトロニック マテリアルズ エルエルシー レジスト下層組成物及び当該組成物を使用するパターン形成方法
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KR20220063170A (ko) 2019-09-17 2022-05-17 제이에스알 가부시끼가이샤 조성물, 레지스트 하층막, 레지스트 하층막의 형성 방법, 패터닝된 기판의 제조 방법 및 화합물
KR20230128000A (ko) 2020-12-28 2023-09-01 제이에스알 가부시끼가이샤 반도체 기판의 제조 방법 및 조성물
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WO2022196673A1 (fr) * 2021-03-16 2022-09-22 日産化学株式会社 Composition de formation de film de sous-couche de réserve contenant un motif de naphtalène
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