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WO2009031612A1 - 観察装置および観察方法、並びに検査装置および検査方法 - Google Patents

観察装置および観察方法、並びに検査装置および検査方法 Download PDF

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Publication number
WO2009031612A1
WO2009031612A1 PCT/JP2008/065969 JP2008065969W WO2009031612A1 WO 2009031612 A1 WO2009031612 A1 WO 2009031612A1 JP 2008065969 W JP2008065969 W JP 2008065969W WO 2009031612 A1 WO2009031612 A1 WO 2009031612A1
Authority
WO
WIPO (PCT)
Prior art keywords
inspecting
monitoring
range
section
differential
Prior art date
Application number
PCT/JP2008/065969
Other languages
English (en)
French (fr)
Inventor
Naoshi Sakaguchi
Masashi Takahashi
Takashi Watanabe
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to JP2009531272A priority Critical patent/JPWO2009031612A1/ja
Priority to CN200880105814A priority patent/CN101796399A/zh
Publication of WO2009031612A1 publication Critical patent/WO2009031612A1/ja
Priority to US12/718,355 priority patent/US20110064297A1/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9503—Wafer edge inspection

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

　本発明に係る検査装置は、被検物における第１の範囲および当該第１の範囲に対して所定方向にずれた第２の範囲を撮像する撮像部３０と、第１の範囲の画像と第２の範囲の画像との前記所定方向に対応する部分の信号の差分を得る差分処理部４４と、差分処理部４４による処理結果に基づいて被検物における欠陥の有無を検査する検査部４６とを有している。
PCT/JP2008/065969 2007-09-05 2008-09-04 観察装置および観察方法、並びに検査装置および検査方法 WO2009031612A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009531272A JPWO2009031612A1 (ja) 2007-09-05 2008-09-04 観察装置および観察方法、並びに検査装置および検査方法
CN200880105814A CN101796399A (zh) 2007-09-05 2008-09-04 观察装置和观察方法以及检查装置和检查方法
US12/718,355 US20110064297A1 (en) 2007-09-05 2010-03-05 Monitoring apparatus, monitoring method, inspecting apparatus and inspecting method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007230374 2007-09-05
JP2007-230374 2007-09-05

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/718,355 Continuation US20110064297A1 (en) 2007-09-05 2010-03-05 Monitoring apparatus, monitoring method, inspecting apparatus and inspecting method

Publications (1)

Publication Number Publication Date
WO2009031612A1 true WO2009031612A1 (ja) 2009-03-12

Family

ID=40428925

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065969 WO2009031612A1 (ja) 2007-09-05 2008-09-04 観察装置および観察方法、並びに検査装置および検査方法

Country Status (6)

Country Link
US (1) US20110064297A1 (ja)
JP (1) JPWO2009031612A1 (ja)
KR (1) KR20100067659A (ja)
CN (1) CN101796399A (ja)
TW (1) TW200916764A (ja)
WO (1) WO2009031612A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103954625A (zh) * 2014-02-13 2014-07-30 同济大学 一种面向激光薄膜内部缺陷的溯源性损伤阈值测量技术
KR101620426B1 (ko) 2014-10-15 2016-05-12 주식회사 알에프디 반도체 제조용 감시장치
JP2021044478A (ja) * 2019-09-13 2021-03-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、および、基板処理方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102645435A (zh) * 2012-04-19 2012-08-22 深圳市华星光电技术有限公司 基板的检测方法和装置
CN102890089B (zh) * 2012-09-17 2015-07-29 上海华力微电子有限公司 晶圆缺陷扫描方法及晶圆缺陷扫描机台
CN104730217B (zh) * 2015-04-16 2016-09-07 京东方科技集团股份有限公司 一种玻璃基板的缺陷分布显示方法及显示装置
JP6241576B1 (ja) * 2016-12-06 2017-12-06 三菱電機株式会社 検査装置及び検査方法
JP7132042B2 (ja) * 2018-09-10 2022-09-06 株式会社ディスコ 加工装置
US11828713B1 (en) 2022-06-30 2023-11-28 Camtek Ltd Semiconductor inspection tool system and method for wafer edge inspection
CN115791807B (zh) * 2023-01-09 2023-05-30 苏州高视半导体技术有限公司 用于检测晶圆缺陷的装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02210249A (ja) * 1989-02-10 1990-08-21 Hitachi Ltd 外観検査方法および装置
JPH02298842A (ja) * 1989-05-15 1990-12-11 Nippon Steel Corp 欠陥検出方法
JPH1151622A (ja) * 1997-08-07 1999-02-26 Hitachi Ltd 異物検査方法および装置
JP2006047040A (ja) * 2004-08-03 2006-02-16 Honda Motor Co Ltd 表面状態判定装置およびプログラム
JP2006329630A (ja) * 2005-05-23 2006-12-07 Hitachi High-Technologies Corp 欠陥検査装置及び欠陥検査方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6661912B1 (en) * 1998-08-03 2003-12-09 Hitachi Electronics Engineering Co., Ltd. Inspecting method and apparatus for repeated micro-miniature patterns
JP2000260699A (ja) * 1999-03-09 2000-09-22 Canon Inc 位置検出装置及び該位置検出装置を用いた半導体露光装置
JP3629244B2 (ja) * 2002-02-19 2005-03-16 本多エレクトロン株式会社 ウエーハ用検査装置
JP2005308464A (ja) * 2004-04-20 2005-11-04 Dainippon Screen Mfg Co Ltd 欠陥検出装置および欠陥検出方法
US20060029257A1 (en) * 2004-08-03 2006-02-09 Honda Motor Co., Ltd. Apparatus for determining a surface condition of an object
JP2006170809A (ja) * 2004-12-16 2006-06-29 Dainippon Screen Mfg Co Ltd 欠陥検出装置および欠陥検出方法
DE102005011237B3 (de) * 2005-03-11 2006-08-03 Leica Microsystems Semiconductor Gmbh Verfahren zur Bestimmung von Defekten in Bildern

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02210249A (ja) * 1989-02-10 1990-08-21 Hitachi Ltd 外観検査方法および装置
JPH02298842A (ja) * 1989-05-15 1990-12-11 Nippon Steel Corp 欠陥検出方法
JPH1151622A (ja) * 1997-08-07 1999-02-26 Hitachi Ltd 異物検査方法および装置
JP2006047040A (ja) * 2004-08-03 2006-02-16 Honda Motor Co Ltd 表面状態判定装置およびプログラム
JP2006329630A (ja) * 2005-05-23 2006-12-07 Hitachi High-Technologies Corp 欠陥検査装置及び欠陥検査方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103954625A (zh) * 2014-02-13 2014-07-30 同济大学 一种面向激光薄膜内部缺陷的溯源性损伤阈值测量技术
KR101620426B1 (ko) 2014-10-15 2016-05-12 주식회사 알에프디 반도체 제조용 감시장치
JP2021044478A (ja) * 2019-09-13 2021-03-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、および、基板処理方法
JP7330027B2 (ja) 2019-09-13 2023-08-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、および、基板処理方法

Also Published As

Publication number Publication date
US20110064297A1 (en) 2011-03-17
KR20100067659A (ko) 2010-06-21
JPWO2009031612A1 (ja) 2010-12-16
TW200916764A (en) 2009-04-16
CN101796399A (zh) 2010-08-04

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