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WO2009008407A1 - 有機半導体素子の製造方法、有機半導体素子及び有機半導体装置 - Google Patents

有機半導体素子の製造方法、有機半導体素子及び有機半導体装置 Download PDF

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Publication number
WO2009008407A1
WO2009008407A1 PCT/JP2008/062283 JP2008062283W WO2009008407A1 WO 2009008407 A1 WO2009008407 A1 WO 2009008407A1 JP 2008062283 W JP2008062283 W JP 2008062283W WO 2009008407 A1 WO2009008407 A1 WO 2009008407A1
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WO
WIPO (PCT)
Prior art keywords
organic semiconductor
active layer
semiconductor element
laminate
producing
Prior art date
Application number
PCT/JP2008/062283
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English (en)
French (fr)
Inventor
Shinichi Yamate
Original Assignee
Sumitomo Chemical Company, Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Company, Limited filed Critical Sumitomo Chemical Company, Limited
Priority to CN2008800242516A priority Critical patent/CN101743628B/zh
Priority to EP08777945.0A priority patent/EP2175481A4/en
Priority to US12/668,364 priority patent/US20100207111A1/en
Publication of WO2009008407A1 publication Critical patent/WO2009008407A1/ja

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

　本発明は、活性層の電気的特性の低下を防止でき、しかも良好なパターン形状を有するようにパターニングされた活性層を形成することができる有機半導体素子の製造方法を提供することを目的とする。かかる目的を達成するため、本発明の有機半導体素子の製造方法は、支持フィルム及び活性層が積層された積層体と、活性層を形成させる素子基板とを、積層体の活性層と素子基板とが接するように貼り合わせる工程と、支持フィルムにおける活性層に対して反対側の面上に、所定のパターン形状を有するマスクを形成する工程と、マスクが形成されていない領域の積層体を除去することにより、活性層をパターニングする工程とを有する。
PCT/JP2008/062283 2007-07-10 2008-07-07 有機半導体素子の製造方法、有機半導体素子及び有機半導体装置 WO2009008407A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008800242516A CN101743628B (zh) 2007-07-10 2008-07-07 有机半导体元件的制造方法、有机半导体元件及有机半导体装置
EP08777945.0A EP2175481A4 (en) 2007-07-10 2008-07-07 PROCESS FOR MANUFACTURING AN ORGANIC SEMICONDUCTOR ELEMENT, ORGANIC SEMICONDUCTOR ELEMENT AND ORGANIC SEMICONDUCTOR EQUIPMENT
US12/668,364 US20100207111A1 (en) 2007-07-10 2008-07-07 Process for producing organic semiconductor element, organic semiconductor element, and organic semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-181167 2007-07-10
JP2007181167A JP2009021297A (ja) 2007-07-10 2007-07-10 有機半導体素子の製造方法、有機半導体素子及び有機半導体装置

Publications (1)

Publication Number Publication Date
WO2009008407A1 true WO2009008407A1 (ja) 2009-01-15

Family

ID=40228577

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062283 WO2009008407A1 (ja) 2007-07-10 2008-07-07 有機半導体素子の製造方法、有機半導体素子及び有機半導体装置

Country Status (7)

Country Link
US (1) US20100207111A1 (ja)
EP (1) EP2175481A4 (ja)
JP (1) JP2009021297A (ja)
KR (1) KR20100055410A (ja)
CN (1) CN101743628B (ja)
TW (1) TW200917544A (ja)
WO (1) WO2009008407A1 (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011060828A (ja) * 2009-09-07 2011-03-24 Kyushu Institute Of Technology 電界効果型有機トランジスタ及びその製造方法
JP5651961B2 (ja) * 2010-02-03 2015-01-14 ソニー株式会社 薄膜トランジスタおよびその製造方法、ならびに電子機器
CN102543723A (zh) * 2012-01-05 2012-07-04 复旦大学 一种栅控二极管半导体器件的制造方法
US8766244B2 (en) * 2012-07-27 2014-07-01 Creator Technology B.V. Pixel control structure, array, backplane, display, and method of manufacturing
DE102014111781B4 (de) * 2013-08-19 2022-08-11 Korea Atomic Energy Research Institute Verfahren zur elektrochemischen Herstellung einer Silizium-Schicht
JP6269091B2 (ja) * 2014-01-17 2018-01-31 住友電気工業株式会社 半導体光素子の製造方法
CN105470313B (zh) * 2014-08-12 2018-11-02 北京纳米能源与系统研究所 基于接触起电的背栅场效应晶体管
JPWO2016042962A1 (ja) * 2014-09-18 2017-06-15 富士フイルム株式会社 半導体装置の製造方法および半導体装置
US10991894B2 (en) 2015-03-19 2021-04-27 Foundation Of Soongsil University-Industry Cooperation Compound of organic semiconductor and organic semiconductor device using the same
CN109309158A (zh) * 2018-08-02 2019-02-05 京东方科技集团股份有限公司 图案化有机膜层制备方法、阵列基板的制备方法
CN110364438B (zh) * 2019-05-29 2023-05-05 北京华碳元芯电子科技有限责任公司 晶体管及其制造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6107117A (en) 1996-12-20 2000-08-22 Lucent Technologies Inc. Method of making an organic thin film transistor
JP2004006476A (ja) 2002-05-31 2004-01-08 Ricoh Co Ltd 縦型有機トランジスタ
JP2006041317A (ja) 2004-07-29 2006-02-09 Sony Corp 有機半導体パターン及び有機半導体層のパターニング方法、有機半導体装置及びその製造方法、並びに表示装置
JP2007096288A (ja) * 2005-08-31 2007-04-12 Sumitomo Chemical Co Ltd トランジスタ及びその製造方法、並びに、このトランジスタを有する半導体装置
JP2007115805A (ja) * 2005-10-19 2007-05-10 Sony Corp 半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6500604B1 (en) * 2000-01-03 2002-12-31 International Business Machines Corporation Method for patterning sensitive organic thin films
JP4816990B2 (ja) * 2000-08-21 2011-11-16 ソニー株式会社 発光素子および半導体素子ならびにそれらの製造方法
US6946332B2 (en) * 2002-03-15 2005-09-20 Lucent Technologies Inc. Forming nanoscale patterned thin film metal layers
WO2004107473A1 (en) * 2003-05-20 2004-12-09 Koninklijke Philips Electronics N.V. A field effect transistor arrangement and method of manufacturing a field effect transistor arrangement
GB2445487B (en) * 2005-08-31 2011-11-02 Sumitomo Chemical Co Transistor, method for manufacturing same, and semiconductor device comprising such transistor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6107117A (en) 1996-12-20 2000-08-22 Lucent Technologies Inc. Method of making an organic thin film transistor
JP2004006476A (ja) 2002-05-31 2004-01-08 Ricoh Co Ltd 縦型有機トランジスタ
JP2006041317A (ja) 2004-07-29 2006-02-09 Sony Corp 有機半導体パターン及び有機半導体層のパターニング方法、有機半導体装置及びその製造方法、並びに表示装置
JP2007096288A (ja) * 2005-08-31 2007-04-12 Sumitomo Chemical Co Ltd トランジスタ及びその製造方法、並びに、このトランジスタを有する半導体装置
JP2007115805A (ja) * 2005-10-19 2007-05-10 Sony Corp 半導体装置の製造方法

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
ATSUO FUKUDA; HIDEO TAKEZOE: "Structures And Properties Of Ferroelectric Liquid Crystals", 1990
H.E.HUITEMA ET AL., ADV. MATER., vol. 14, 2002, pages 1201
LIQUID CRYSTALS, vol. 3, no. 1, 1991, pages 3 - 16
S. R. WASSERMAN ET AL., LANGMUIR, vol. 5, 1989, pages 1074
See also references of EP2175481A4
SHEIICHI MATSUMOTO; SHIRYOU KAKUTA: "Basics And Applications Of Liquid Crystals", 1991

Also Published As

Publication number Publication date
JP2009021297A (ja) 2009-01-29
KR20100055410A (ko) 2010-05-26
US20100207111A1 (en) 2010-08-19
TW200917544A (en) 2009-04-16
EP2175481A1 (en) 2010-04-14
CN101743628B (zh) 2012-03-28
EP2175481A4 (en) 2013-09-04
CN101743628A (zh) 2010-06-16

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