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WO2009066739A1 - 半導体デバイスの製造方法、半導体デバイス、通信機器、および半導体レーザ - Google Patents

半導体デバイスの製造方法、半導体デバイス、通信機器、および半導体レーザ Download PDF

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Publication number
WO2009066739A1
WO2009066739A1 PCT/JP2008/071151 JP2008071151W WO2009066739A1 WO 2009066739 A1 WO2009066739 A1 WO 2009066739A1 JP 2008071151 W JP2008071151 W JP 2008071151W WO 2009066739 A1 WO2009066739 A1 WO 2009066739A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor layer
dielectric film
semiconductor device
surface treatment
forming step
Prior art date
Application number
PCT/JP2008/071151
Other languages
English (en)
French (fr)
Inventor
Hidehiro Taniguchi
Takeshi Namegaya
Etsuji Katayama
Original Assignee
The Furukawa Electric Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Furukawa Electric Co., Ltd. filed Critical The Furukawa Electric Co., Ltd.
Priority to CN200880117257.8A priority Critical patent/CN101868888B/zh
Priority to EP08852875.7A priority patent/EP2214272B1/en
Priority to JP2009542588A priority patent/JP5391078B2/ja
Publication of WO2009066739A1 publication Critical patent/WO2009066739A1/ja
Priority to US12/785,240 priority patent/US8030224B2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2068—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by radiation treatment or annealing

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

　半導体層と、その上に堆積される誘電体層を構成に含む半導体デバイスの製造方法であって、半導体層を形成する半導体層形成工程と、前記半導体層形成工程において形成された前記半導体層の表面に対して、残留炭素化合物を除去するための表面処理を施す表面処理工程と、前記表面処理工程において表面処理を施した半導体層の表面の少なくとも一部に、前記表面処理後の表面状態に応じた堆積条件で誘電体膜を形成する誘電体膜形成工程と、前記誘電体膜形成工程において誘電体膜が形成された前記半導体層に熱処理を施すことにより、前記半導体層の少なくとも一部領域の結晶状態を変化させる熱処理工程とを含む。これによって、誘電体膜の作用を十分に発揮させることができる。
PCT/JP2008/071151 2007-11-21 2008-11-20 半導体デバイスの製造方法、半導体デバイス、通信機器、および半導体レーザ WO2009066739A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN200880117257.8A CN101868888B (zh) 2007-11-21 2008-11-20 半导体器件的制造方法、半导体器件、通信设备和半导体激光器
EP08852875.7A EP2214272B1 (en) 2007-11-21 2008-11-20 Method for fabricating semiconductor device, semiconductor device, communication apparatus, and semiconductor laser
JP2009542588A JP5391078B2 (ja) 2007-11-21 2008-11-20 半導体デバイスの製造方法
US12/785,240 US8030224B2 (en) 2007-11-21 2010-05-21 Manufacturing method of semiconductor device, semiconductor device, communication apparatus, and semiconductor laser

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007301591 2007-11-21
JP2007-301591 2007-11-21

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/785,240 Continuation US8030224B2 (en) 2007-11-21 2010-05-21 Manufacturing method of semiconductor device, semiconductor device, communication apparatus, and semiconductor laser

Publications (1)

Publication Number Publication Date
WO2009066739A1 true WO2009066739A1 (ja) 2009-05-28

Family

ID=40667561

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/071151 WO2009066739A1 (ja) 2007-11-21 2008-11-20 半導体デバイスの製造方法、半導体デバイス、通信機器、および半導体レーザ

Country Status (5)

Country Link
US (1) US8030224B2 (ja)
EP (1) EP2214272B1 (ja)
JP (1) JP5391078B2 (ja)
CN (1) CN101868888B (ja)
WO (1) WO2009066739A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011135803A1 (en) * 2010-04-26 2011-11-03 Furukawa Electric Co., Ltd. Semiconductor laser element and method of manufacturing the same
WO2012137426A1 (ja) * 2011-04-05 2012-10-11 古河電気工業株式会社 半導体光デバイス及びその製造方法
JP2012222028A (ja) * 2011-04-05 2012-11-12 Furukawa Electric Co Ltd:The 半導体レーザ素子及びその製造方法
JP2012222045A (ja) * 2011-04-05 2012-11-12 Furukawa Electric Co Ltd:The 半導体光デバイスの製造方法及び半導体光デバイス
JP2014003229A (ja) * 2012-06-20 2014-01-09 Hamamatsu Photonics Kk 半導体発光素子及び半導体発光素子の製造方法
WO2014126164A1 (ja) * 2013-02-13 2014-08-21 古河電気工業株式会社 半導体光素子、半導体レーザ素子、及びその製造方法、並びに半導体レーザモジュール及び半導体素子の製造方法
US10033154B2 (en) 2010-03-03 2018-07-24 Furukawa Electronic Co., Ltd. Semiconductor optical element, semiconductor laser element, and method for manufacturing semiconductor optical element and semiconductor laser element, and method for manufacturing semiconductor laser module and semiconductor element

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JP2010161329A (ja) * 2008-12-08 2010-07-22 Canon Inc 二次元フォトニック結晶を備えた面発光レーザ
US8190252B2 (en) 2009-02-12 2012-05-29 Incube Labs, Llc Iontophoretic system for transdermal delivery of active agents for therapeutic and medicinal purposes
US9008765B2 (en) 2009-02-12 2015-04-14 Incube Labs, Llc System and method for biphasic transdermal iontophoretic delivery of therapeutic agents for the control of addictive cravings
US8615026B2 (en) 2009-07-06 2013-12-24 Furukawa Electric Co., Ltd. Method of manufacturing semiconductor optical device, method of manufacturing semiconductor optical laser element, and semiconductor optical device
WO2011044175A2 (en) 2009-10-06 2011-04-14 Incube Labs, Llc Patch and patch assembly for iontophoretic transdermal delivery of active agents for therapeutic and medicinal purposes
US8685038B2 (en) 2009-12-07 2014-04-01 Incube Labs, Llc Iontophoretic apparatus and method for marking of the skin
US8986279B2 (en) 2010-02-10 2015-03-24 Incube Labs, Llc Methods and architecture for power optimization of iontophoretic transdermal drug delivery
WO2012129576A2 (en) 2011-03-24 2012-09-27 Incube Labs, Llc System and method for biphasic transdermal iontophreotic delivery of therapeutic agents
CN102832287B (zh) * 2011-11-10 2015-11-25 郭磊 一种半导体直流光电变压器
US8941126B2 (en) 2011-11-10 2015-01-27 Lei Guo Semiconductor electricity converter
JP6655538B2 (ja) * 2014-08-12 2020-02-26 古河電気工業株式会社 半導体素子
CN112803240B (zh) * 2021-01-15 2022-06-21 陕西科技大学 一种InGaAs/AlGaAs阱垒外延层结构的优化方法及其应用

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JP2004342733A (ja) * 2003-05-14 2004-12-02 Hitachi Ltd 半導体装置の製造方法及びその製造方法による半導体装置
WO2005057744A1 (ja) * 2003-12-15 2005-06-23 The Furukawa Electric Co., Ltd. 半導体素子の製造方法
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JP2007242718A (ja) * 2006-03-06 2007-09-20 Furukawa Electric Co Ltd:The 半導体レーザ素子および半導体レーザ素子の製造方法

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JP2004342733A (ja) * 2003-05-14 2004-12-02 Hitachi Ltd 半導体装置の製造方法及びその製造方法による半導体装置
WO2005057744A1 (ja) * 2003-12-15 2005-06-23 The Furukawa Electric Co., Ltd. 半導体素子の製造方法
JP2007150170A (ja) * 2005-11-30 2007-06-14 Sharp Corp 半導体装置の製造方法、半導体レーザ装置、光伝送モジュールおよび光ディスク装置
JP2007242718A (ja) * 2006-03-06 2007-09-20 Furukawa Electric Co Ltd:The 半導体レーザ素子および半導体レーザ素子の製造方法

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10033154B2 (en) 2010-03-03 2018-07-24 Furukawa Electronic Co., Ltd. Semiconductor optical element, semiconductor laser element, and method for manufacturing semiconductor optical element and semiconductor laser element, and method for manufacturing semiconductor laser module and semiconductor element
WO2011135803A1 (en) * 2010-04-26 2011-11-03 Furukawa Electric Co., Ltd. Semiconductor laser element and method of manufacturing the same
US8660160B2 (en) 2010-04-26 2014-02-25 Furukawa Electric Co., Ltd. Semiconductor laser element and method of manufacturing the same
JP2012222045A (ja) * 2011-04-05 2012-11-12 Furukawa Electric Co Ltd:The 半導体光デバイスの製造方法及び半導体光デバイス
CN103518297A (zh) * 2011-04-05 2014-01-15 古河电气工业株式会社 半导体光器件及其制造方法
JP2012222028A (ja) * 2011-04-05 2012-11-12 Furukawa Electric Co Ltd:The 半導体レーザ素子及びその製造方法
US9312443B2 (en) 2011-04-05 2016-04-12 Furukawa Electric Co., Ltd. Semiconductor light device and manufacturing method for the same
US9627849B2 (en) 2011-04-05 2017-04-18 Furukawa Electric Co., Ltd. Semiconductor light device and manufacturing method for the same
WO2012137426A1 (ja) * 2011-04-05 2012-10-11 古河電気工業株式会社 半導体光デバイス及びその製造方法
JP2014003229A (ja) * 2012-06-20 2014-01-09 Hamamatsu Photonics Kk 半導体発光素子及び半導体発光素子の製造方法
WO2014126164A1 (ja) * 2013-02-13 2014-08-21 古河電気工業株式会社 半導体光素子、半導体レーザ素子、及びその製造方法、並びに半導体レーザモジュール及び半導体素子の製造方法
JP5731084B2 (ja) * 2013-02-13 2015-06-10 古河電気工業株式会社 半導体光素子、半導体レーザ素子、及びその製造方法、並びに半導体レーザモジュール及び半導体素子の製造方法
US10069280B2 (en) 2013-02-13 2018-09-04 Furukawa Electric Co., Ltd. Semiconductor optical element, semiconductor laser element, and method for manufacturing semiconductor optical element and semiconductor laser element, and method for manufacturing semiconductor laser module and semiconductor element

Also Published As

Publication number Publication date
US20100232464A1 (en) 2010-09-16
EP2214272B1 (en) 2021-06-02
CN101868888A (zh) 2010-10-20
JPWO2009066739A1 (ja) 2011-04-07
US8030224B2 (en) 2011-10-04
EP2214272A1 (en) 2010-08-04
JP5391078B2 (ja) 2014-01-15
CN101868888B (zh) 2016-04-13
EP2214272A4 (en) 2017-06-28

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