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WO2009082999A3 - Puce laser à semi-conducteur à émission par la tranche comprenant une bande de contact structurée - Google Patents

Puce laser à semi-conducteur à émission par la tranche comprenant une bande de contact structurée Download PDF

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Publication number
WO2009082999A3
WO2009082999A3 PCT/DE2008/002131 DE2008002131W WO2009082999A3 WO 2009082999 A3 WO2009082999 A3 WO 2009082999A3 DE 2008002131 W DE2008002131 W DE 2008002131W WO 2009082999 A3 WO2009082999 A3 WO 2009082999A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor laser
laser chip
edge
contact strip
emitting semiconductor
Prior art date
Application number
PCT/DE2008/002131
Other languages
German (de)
English (en)
Other versions
WO2009082999A2 (fr
Inventor
Harald Koenig
Christian Lauer
Peter Brick
Wolfgang Schmid
Robin Fehse
Uwe Strauss
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2009082999A2 publication Critical patent/WO2009082999A2/fr
Publication of WO2009082999A3 publication Critical patent/WO2009082999A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/20—Lasers with a special output beam profile or cross-section, e.g. non-Gaussian
    • H01S2301/206—Top hat profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne une puce laser à semi-conducteur à émission par la tranche comprenant une zone active (14) dans laquelle un rayonnement électromagnétique est généré pendant le fonctionnement de la puce laser à semi-conducteur (1), ainsi qu'au moins une bande de contact structurée (2) qui est structurée de sorte qu'une injection de porteurs de charge dans la zone active (14) diminue en allant vers le côté de la puce laser à semi-conducteur (1) où se trouve une facette de sortie (3) de la puce laser à semi-conducteur (1).
PCT/DE2008/002131 2007-12-27 2008-12-18 Puce laser à semi-conducteur à émission par la tranche comprenant une bande de contact structurée WO2009082999A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102007062788.4 2007-12-27
DE102007062788 2007-12-27
DE102008014092.9 2008-03-13
DE102008014092A DE102008014092A1 (de) 2007-12-27 2008-03-13 Kantenemittierender Halbleiterlaserchip mit einem strukturierten Kontaktstreifen

Publications (2)

Publication Number Publication Date
WO2009082999A2 WO2009082999A2 (fr) 2009-07-09
WO2009082999A3 true WO2009082999A3 (fr) 2009-12-03

Family

ID=40690875

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2008/002131 WO2009082999A2 (fr) 2007-12-27 2008-12-18 Puce laser à semi-conducteur à émission par la tranche comprenant une bande de contact structurée

Country Status (2)

Country Link
DE (1) DE102008014092A1 (fr)
WO (1) WO2009082999A2 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008058436B4 (de) 2008-11-21 2019-03-07 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaserchip
DE102010020625B4 (de) * 2010-05-14 2024-02-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines kantenemittierenden Halbleiterlasers
DE102011055891B9 (de) * 2011-11-30 2017-09-14 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode
DE102012111512B4 (de) 2012-11-28 2021-11-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterstreifenlaser
DE102015203113B4 (de) * 2015-02-20 2023-12-28 Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik Laserdiode mit verbesserten elektrischen Leiteigenschaften
DE102015116336B4 (de) * 2015-09-28 2020-03-19 Osram Opto Semiconductors Gmbh Halbleiterlaser
DE102015119146A1 (de) * 2015-11-06 2017-05-11 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zum Herstellen eines Halbleiterlasers sowie Wafer
DE102016106949B4 (de) * 2016-04-14 2020-07-02 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser
DE102016125430A1 (de) * 2016-12-22 2018-06-28 Osram Opto Semiconductors Gmbh Oberflächenmontierbarer Halbleiterlaser, Anordnung mit einem solchen Halbleiterlaser und Betriebsverfahren hierfür
DE102016125857B4 (de) * 2016-12-29 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode
DE102017103789B4 (de) 2017-02-23 2024-02-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserdiode
EP3776762B1 (fr) * 2018-03-26 2024-09-04 Lawrence Livermore National Security, LLC Laser à diode à profil de densité de courant manipulé
US20220077657A1 (en) * 2018-12-31 2022-03-10 Nlight, Inc. Method, system and apparatus for differential current injection
DE102023102047B4 (de) * 2023-01-27 2024-12-12 Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik Halbleiterlaserbarren mit verbesserter Strahlqualität

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4441187A (en) * 1980-07-31 1984-04-03 Bouley Jean Claude A semiconductor laser light source
US4831630A (en) * 1983-04-14 1989-05-16 Xerox Corporation Phased-locked window lasers
JPH09321379A (ja) * 1996-05-29 1997-12-12 Shimadzu Corp 半導体レーザ
US5794839A (en) * 1994-08-01 1998-08-18 Nippondenso Co., Ltd. Bonding material and bonding method for electric element
JPH1168225A (ja) * 1997-08-18 1999-03-09 Fuji Xerox Co Ltd 面発光型半導体レーザ
JP2003031894A (ja) * 2001-07-19 2003-01-31 Sony Corp 半導体レーザおよびその製造方法
WO2007000614A1 (fr) * 2005-06-28 2007-01-04 Bookham Technology Plc Dispositif optoélectronique à semi-conducteurs et puissance élevée
US20070165685A1 (en) * 2003-12-22 2007-07-19 Kiminori Mizuuchi Semiconductor laser device and laser projector
EP1903646A2 (fr) * 2006-09-20 2008-03-26 JDS Uniphase Corporation Diode laser à semiconducteur comprenant une structure de fenêtre avancée
US20090067464A1 (en) * 2007-09-05 2009-03-12 Kabushiki Kaisha Toshiba Semiconductor laser device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4791646A (en) * 1985-07-31 1988-12-13 California Institute Of Technology Method for tailoring the two-dimensional spatial gain distribution in optoelectronic devices and its application to tailored gain broad area semiconductor lasers capable of high power operation with very narrow single lobed farfield patterns
JPS6396988A (ja) * 1986-10-14 1988-04-27 Sony Corp 半導体レ−ザ
US5228049A (en) * 1991-08-27 1993-07-13 Xerox Corporation Beam control in integrated diode laser and power amplifier
AU4286499A (en) * 1998-06-18 2000-01-05 University College Cork A semi-conductor device and a method for varying current density in an active region of a junction of the semi-conductor device
DE10061701A1 (de) * 2000-12-12 2002-06-27 Osram Opto Semiconductors Gmbh Halbleiterlaser mit lateraler Stromführung und Verfahren zu dessen Herstellung
DE10208463B4 (de) 2002-02-27 2012-04-05 Osram Opto Semiconductors Gmbh Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
DE102004036963A1 (de) * 2004-05-28 2005-12-22 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaser-Vorrichtung

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4441187A (en) * 1980-07-31 1984-04-03 Bouley Jean Claude A semiconductor laser light source
US4831630A (en) * 1983-04-14 1989-05-16 Xerox Corporation Phased-locked window lasers
US5794839A (en) * 1994-08-01 1998-08-18 Nippondenso Co., Ltd. Bonding material and bonding method for electric element
JPH09321379A (ja) * 1996-05-29 1997-12-12 Shimadzu Corp 半導体レーザ
JPH1168225A (ja) * 1997-08-18 1999-03-09 Fuji Xerox Co Ltd 面発光型半導体レーザ
JP2003031894A (ja) * 2001-07-19 2003-01-31 Sony Corp 半導体レーザおよびその製造方法
US20070165685A1 (en) * 2003-12-22 2007-07-19 Kiminori Mizuuchi Semiconductor laser device and laser projector
WO2007000614A1 (fr) * 2005-06-28 2007-01-04 Bookham Technology Plc Dispositif optoélectronique à semi-conducteurs et puissance élevée
EP1903646A2 (fr) * 2006-09-20 2008-03-26 JDS Uniphase Corporation Diode laser à semiconducteur comprenant une structure de fenêtre avancée
US20090067464A1 (en) * 2007-09-05 2009-03-12 Kabushiki Kaisha Toshiba Semiconductor laser device

Also Published As

Publication number Publication date
WO2009082999A2 (fr) 2009-07-09
DE102008014092A1 (de) 2009-07-02

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