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WO2009082999A3 - Edge-emitting semiconductor laser chip having a structured contact strip - Google Patents

Edge-emitting semiconductor laser chip having a structured contact strip Download PDF

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Publication number
WO2009082999A3
WO2009082999A3 PCT/DE2008/002131 DE2008002131W WO2009082999A3 WO 2009082999 A3 WO2009082999 A3 WO 2009082999A3 DE 2008002131 W DE2008002131 W DE 2008002131W WO 2009082999 A3 WO2009082999 A3 WO 2009082999A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor laser
laser chip
edge
contact strip
emitting semiconductor
Prior art date
Application number
PCT/DE2008/002131
Other languages
German (de)
French (fr)
Other versions
WO2009082999A2 (en
Inventor
Harald Koenig
Christian Lauer
Peter Brick
Wolfgang Schmid
Robin Fehse
Uwe Strauss
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2009082999A2 publication Critical patent/WO2009082999A2/en
Publication of WO2009082999A3 publication Critical patent/WO2009082999A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/20—Lasers with a special output beam profile or cross-section, e.g. non-Gaussian
    • H01S2301/206—Top hat profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention specifies an edge-emitting semiconductor laser chip having - an active zone (14) in which electromagnetic radiation is produced during operation of the semiconductor laser chip (1) and - at least one structured contact strip (2) which is structured in such a manner that charge carrier injection into the active zone (14) decreases towards a side of the semiconductor laser chip (1) on which a coupling-out facet (3) of the semiconductor laser chip (1) is situated.
PCT/DE2008/002131 2007-12-27 2008-12-18 Edge-emitting semiconductor laser chip having a structured contact strip WO2009082999A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102007062788 2007-12-27
DE102007062788.4 2007-12-27
DE102008014092.9 2008-03-13
DE102008014092A DE102008014092A1 (en) 2007-12-27 2008-03-13 Edge-emitting semiconductor laser chip with a structured contact strip

Publications (2)

Publication Number Publication Date
WO2009082999A2 WO2009082999A2 (en) 2009-07-09
WO2009082999A3 true WO2009082999A3 (en) 2009-12-03

Family

ID=40690875

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2008/002131 WO2009082999A2 (en) 2007-12-27 2008-12-18 Edge-emitting semiconductor laser chip having a structured contact strip

Country Status (2)

Country Link
DE (1) DE102008014092A1 (en)
WO (1) WO2009082999A2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008058436B4 (en) 2008-11-21 2019-03-07 Osram Opto Semiconductors Gmbh Edge-emitting semiconductor laser chip
DE102010020625B4 (en) * 2010-05-14 2024-02-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Method for producing an edge-emitting semiconductor laser
DE102011055891B9 (en) * 2011-11-30 2017-09-14 Osram Opto Semiconductors Gmbh Semiconductor laser diode
DE102012111512B4 (en) 2012-11-28 2021-11-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Semiconductor stripe lasers
DE102015203113B4 (en) * 2015-02-20 2023-12-28 Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik Laser diode with improved electrical conduction properties
DE102015116336B4 (en) 2015-09-28 2020-03-19 Osram Opto Semiconductors Gmbh Semiconductor laser
DE102015119146A1 (en) * 2015-11-06 2017-05-11 Osram Opto Semiconductors Gmbh Semiconductor laser and method for producing a semiconductor laser and wafers
DE102016106949B4 (en) 2016-04-14 2020-07-02 Osram Opto Semiconductors Gmbh Edge emitting semiconductor laser
DE102016125430A1 (en) * 2016-12-22 2018-06-28 Osram Opto Semiconductors Gmbh Surface-mountable semiconductor laser, arrangement with such a semiconductor laser and operating method therefor
DE102016125857B4 (en) * 2016-12-29 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung semiconductor laser diode
DE102017103789B4 (en) 2017-02-23 2024-02-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laser diode
US11658460B2 (en) 2018-03-26 2023-05-23 Lawrence Livermore National Security, Llc Engineered current-density profile diode laser
US20220077657A1 (en) * 2018-12-31 2022-03-10 Nlight, Inc. Method, system and apparatus for differential current injection
DE102023102047B4 (en) * 2023-01-27 2024-12-12 Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik Semiconductor laser bars with improved beam quality

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4441187A (en) * 1980-07-31 1984-04-03 Bouley Jean Claude A semiconductor laser light source
US4831630A (en) * 1983-04-14 1989-05-16 Xerox Corporation Phased-locked window lasers
JPH09321379A (en) * 1996-05-29 1997-12-12 Shimadzu Corp Semiconductor laser
US5794839A (en) * 1994-08-01 1998-08-18 Nippondenso Co., Ltd. Bonding material and bonding method for electric element
JPH1168225A (en) * 1997-08-18 1999-03-09 Fuji Xerox Co Ltd Surface light emitting type semiconductor laser
JP2003031894A (en) * 2001-07-19 2003-01-31 Sony Corp Semiconductor laser and its manufacturing method
WO2007000614A1 (en) * 2005-06-28 2007-01-04 Bookham Technology Plc High power semiconductor opto-electronic device
US20070165685A1 (en) * 2003-12-22 2007-07-19 Kiminori Mizuuchi Semiconductor laser device and laser projector
EP1903646A2 (en) * 2006-09-20 2008-03-26 JDS Uniphase Corporation Semiconductor laser diode with advanced window structure
US20090067464A1 (en) * 2007-09-05 2009-03-12 Kabushiki Kaisha Toshiba Semiconductor laser device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4791646A (en) * 1985-07-31 1988-12-13 California Institute Of Technology Method for tailoring the two-dimensional spatial gain distribution in optoelectronic devices and its application to tailored gain broad area semiconductor lasers capable of high power operation with very narrow single lobed farfield patterns
JPS6396988A (en) * 1986-10-14 1988-04-27 Sony Corp Semiconductor laser
US5228049A (en) * 1991-08-27 1993-07-13 Xerox Corporation Beam control in integrated diode laser and power amplifier
AU4286499A (en) * 1998-06-18 2000-01-05 University College Cork A semi-conductor device and a method for varying current density in an active region of a junction of the semi-conductor device
DE10061701A1 (en) * 2000-12-12 2002-06-27 Osram Opto Semiconductors Gmbh Semiconductor laser with lateral current conduction and method for its production
DE10208463B4 (en) 2002-02-27 2012-04-05 Osram Opto Semiconductors Gmbh Semiconductor laser device and method for its manufacture
DE102004036963A1 (en) * 2004-05-28 2005-12-22 Osram Opto Semiconductors Gmbh Optically pumped surface emitting semiconductor laser device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4441187A (en) * 1980-07-31 1984-04-03 Bouley Jean Claude A semiconductor laser light source
US4831630A (en) * 1983-04-14 1989-05-16 Xerox Corporation Phased-locked window lasers
US5794839A (en) * 1994-08-01 1998-08-18 Nippondenso Co., Ltd. Bonding material and bonding method for electric element
JPH09321379A (en) * 1996-05-29 1997-12-12 Shimadzu Corp Semiconductor laser
JPH1168225A (en) * 1997-08-18 1999-03-09 Fuji Xerox Co Ltd Surface light emitting type semiconductor laser
JP2003031894A (en) * 2001-07-19 2003-01-31 Sony Corp Semiconductor laser and its manufacturing method
US20070165685A1 (en) * 2003-12-22 2007-07-19 Kiminori Mizuuchi Semiconductor laser device and laser projector
WO2007000614A1 (en) * 2005-06-28 2007-01-04 Bookham Technology Plc High power semiconductor opto-electronic device
EP1903646A2 (en) * 2006-09-20 2008-03-26 JDS Uniphase Corporation Semiconductor laser diode with advanced window structure
US20090067464A1 (en) * 2007-09-05 2009-03-12 Kabushiki Kaisha Toshiba Semiconductor laser device

Also Published As

Publication number Publication date
WO2009082999A2 (en) 2009-07-09
DE102008014092A1 (en) 2009-07-02

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