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WO2009081621A1 - Appareil et procédé de traitement laser - Google Patents

Appareil et procédé de traitement laser Download PDF

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Publication number
WO2009081621A1
WO2009081621A1 PCT/JP2008/065514 JP2008065514W WO2009081621A1 WO 2009081621 A1 WO2009081621 A1 WO 2009081621A1 JP 2008065514 W JP2008065514 W JP 2008065514W WO 2009081621 A1 WO2009081621 A1 WO 2009081621A1
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WO
WIPO (PCT)
Prior art keywords
substrate
laser
processing
laser beam
processing mode
Prior art date
Application number
PCT/JP2008/065514
Other languages
English (en)
Japanese (ja)
Inventor
Hideki Morita
Norifumi Arima
Original Assignee
Mitsuboshi Diamond Industrial Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsuboshi Diamond Industrial Co., Ltd. filed Critical Mitsuboshi Diamond Industrial Co., Ltd.
Priority to CN2008801221076A priority Critical patent/CN101903129B/zh
Priority to JP2009546972A priority patent/JP5070299B2/ja
Priority to KR1020107002395A priority patent/KR101142290B1/ko
Publication of WO2009081621A1 publication Critical patent/WO2009081621A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/09—Severing cooled glass by thermal shock
    • C03B33/091—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam
    • C03B33/093—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam using two or more focussed radiation beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/10—Devices involving relative movement between laser beam and workpiece using a fixed support, i.e. involving moving the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/023—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
    • C03B33/03—Glass cutting tables; Apparatus for transporting or handling sheet glass during the cutting or breaking operations
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/023—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
    • C03B33/033—Apparatus for opening score lines in glass sheets
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/023—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
    • C03B33/037—Controlling or regulating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G2249/00—Aspects relating to conveying systems for the manufacture of fragile sheets
    • B65G2249/04—Arrangements of vacuum systems or suction cups
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G2249/00—Aspects relating to conveying systems for the manufacture of fragile sheets
    • B65G2249/04—Arrangements of vacuum systems or suction cups
    • B65G2249/045—Details of suction cups suction cups

Definitions

  • the present invention relates to a laser processing apparatus that heats a brittle material substrate at a temperature lower than the temperature at which the substrate is softened by irradiating the laser beam, and performs a cutting process by relatively moving the laser beam.
  • the brittle material substrate to be processed according to the present invention include a glass substrate, ceramics of a sintered material, single crystal silicon, a semiconductor wafer, a ceramic substrate, and the like.
  • a substrate placed on a table is scanned with a laser beam to perform scribe processing (also referred to as laser scribe), and then a laser is applied along a scribe line formed on the substrate.
  • scribe processing also referred to as laser scribe
  • a laser processing method for performing a break processing also called a laser break
  • the scribe process refers to a process of forming a shallow crack (referred to as a scribe line) that becomes a cutting line at the time of division on a planned line to be divided before completely dividing the substrate.
  • the breaking process refers to a process in which a crack is developed in the depth direction by laser irradiation or the like along a formed scribe line and is completely divided.
  • Patent Document a processing method in which a laser beam is scanned along a pre-formed scribe line in a state where gas is blown and floated from below the substrate toward the lower surface of the substrate.
  • a high-quality divided section can be obtained by performing a cutting method in which a scribing process is performed by the first laser irradiation and then a breaking process is performed by the second laser irradiation.
  • a cutting method in which a scribing process is performed by the first laser irradiation and then a breaking process is performed by the second laser irradiation.
  • the substrate when the substrate is placed on a table as a support means by performing a break process by laser irradiation in a state where the substrate is levitated, In comparison, the substrate can be easily divided. In particular, if the substrate is thick, it is difficult to break by simply placing the substrate on a table and irradiating with a laser. Usually, the substrate is divided by applying a bending moment by mechanical pressing using a break bar. However, when the substrate is levitated, it is possible to divide by laser irradiation alone.
  • the substrate having a plate thickness of 0.5 mm or less it may be suddenly divided during the scribing process by laser irradiation, which may cause a problem. That is, in some cases, it is necessary to control the substrate state for each processing step so that it is not divided at the time of scribe processing by laser irradiation and is divided only at the time of break processing by the next laser irradiation.
  • the x-direction and y-direction for the purpose of cutting the substrate into a square
  • the x-direction scribing process is performed first, followed by the orthogonal y-direction.
  • the present invention accurately controls the division state of the substrate for each processing step so that the substrate is not divided at the time of scribe processing by laser irradiation and is surely divided at the break processing by laser irradiation of the next process.
  • An object of the present invention is to provide a laser processing apparatus capable of performing the above.
  • the laser processing apparatus of the present invention which has been made to solve the above problems, performs a scribing process on the processed surface of a substrate made of a brittle material by a first laser beam scan, and then performs two scribing along the formed scribe line.
  • a laser processing apparatus for performing a break processing by a second laser beam scanning wherein a substrate mounting surface is formed of a porous member, and an adsorption mechanism that adsorbs the substrate through the porous member and gas is supplied to the substrate through the porous member.
  • the laser beam scanning optical system that scans the substrate, and the detachment of the substrate is prevented by operating the suction mechanism during scribe processing to restrain the deformation of the substrate. And so that during the break processing and a control unit for controlling so as to facilitate the cutting of the substrate by letting freely rise to deformation of the substrate by operating the floating mechanism.
  • the porous member may be a hard sponge material, a porous material such as ceramic, a metal plate in which a hole is formed, or the like.
  • the substrate is placed on the porous member serving as the substrate placement surface of the table.
  • the controller operates the suction mechanism during the scribing process to suck the substrate.
  • the substrate is strongly adsorbed so that the substrate is not deformed such that a bending moment is applied to the substrate.
  • a substrate having a small thickness compared to a substrate having a large thickness is likely to bend when heated by a laser beam.
  • a thin substrate (usually a substrate having a thickness of up to 0.1 mm) among the substrates to be processed. Is a thin substrate) and is adsorbed with an adsorption force that does not cause bending. Then, in a state where the substrate is strongly adsorbed on the substrate mounting surface, a laser beam is scanned by a laser beam scanning optical system to form a scribe line (crack). In this way, the scribe line is formed so that the substrate is never divided during the scribe process. Subsequently, gas is blown to the lower surface of the substrate by the levitation mechanism to float the substrate. At this time, the contact member restricts the substrate from moving horizontally.
  • the laser beam is scanned along the scribe line in a state where the substrate is levitated and divided.
  • a substrate with a large thickness compared to a substrate with a small thickness is difficult to divide by simply irradiating it with a laser beam while adsorbed to a table. Irradiate the beam. Thereby, even a thick substrate can be easily divided.
  • the substrate is not divided at the time of scribe processing (laser scribe), and is reliably divided at the next break processing (laser break).
  • the divided state of the substrate can be accurately controlled for each processing step.
  • a laser processing apparatus made to solve the above-described problem performs a scribing process by scanning a laser beam for the first time on a processing surface of a substrate made of a brittle material, and then along the formed scribe line.
  • a laser processing apparatus that performs a breaking process by scanning the laser beam for the second time, wherein a substrate mounting surface is formed of a porous member, and an adsorption mechanism that adsorbs the substrate through the porous member and the substrate through the porous member Executed at the time of machining at least thick plates, a table provided with a levitation mechanism that blows gas to rise, a laser light source, a laser beam scanning optical system that scans a laser beam emitted from the laser light source on the substrate, and A processing mode selection unit that can select a thick plate processing mode and a thin plate processing mode to be executed when performing thin plate processing, and a thick plate processing mode are selected. When the thin plate processing mode is selected, the suction mechanism is operated during scribing to control the substrate. And a control unit for each processing mode for controlling to prevent the substrate from being divided by restraining the deformation.
  • the control unit for each processing mode when the thick plate processing mode is selected by the processing mode selection unit, the control unit for each processing mode operates the levitation mechanism during break processing so that the brittle material substrate can be freely deformed. Control is performed so that the substrate is divided. Thereby, even if it is a board
  • the control unit for each processing mode controls so that the substrate can be prevented from being divided by operating the suction mechanism during scribe processing to restrain the deformation of the substrate. To do.
  • substrate can be prevented at the time of a scribe process.
  • the thickness of the substrate it is possible to easily divide at the time of break processing for a thick substrate, and to prevent division at the time of scribe processing for a thin substrate, and execute control according to the thickness. Can do.
  • control unit for each processing mode operates the suction mechanism with a lower suction force than the thin plate processing mode when scribing in the thick plate processing mode to position the substrate, and the levitation mechanism during break processing in the thin plate processing mode. It is also possible to control to promote the division of the substrate by causing the substrate to be freely deformed. According to this, in the thick plate processing mode, positioning is performed with the suction force necessary for normal position fixing during the scribe processing. In the thin plate processing mode, the levitation mechanism is operated to cause the substrate to be freely deformed to promote the division of the substrate. According to the present invention, reliable cutting can be performed according to the thickness of the substrate.
  • the suction when the suction mechanism is operated during the scribing process to restrain the deformation of the substrate, the suction may be performed with a force of 30 MPa or more. According to this, since the adsorption mechanism is operated with such a strong force at the time of scribe processing, it is possible to reliably suppress the deformation of the substrate at the time of heating.
  • the upper limit of the suction force is not particularly shown, but suction is performed with a force within a range where the substrate is not damaged.
  • the laser processing method of the present invention made from another viewpoint performs scribing by scanning the laser beam for the first time on the processing surface of the brittle material substrate, and then performing the second laser along the formed scribe line. It is a laser processing method that performs a break processing by scanning a beam, and at the time of scribe processing, a substrate is adsorbed to the substrate mounting surface to restrain deformation of the substrate, thereby forming a scribe line while preventing the substrate from being divided, At the time of break processing, the substrate is lifted at the same horizontal position as that at the time of scribe processing, so that the substrate is freely deformed to facilitate the division of the substrate.
  • the laser processing method made from another viewpoint is that the processing surface of the substrate made of a brittle material is scribed by the first laser beam scanning, and then the second laser beam is formed along the formed scribe line.
  • a laser processing method for performing a breaking process by scanning the substrate and when the thickness of the substrate is at least 0.5 mm or less, the substrate is attracted to the substrate mounting surface during the scribing process to restrain the deformation of the substrate.
  • the substrate is lifted from the substrate mounting surface so that the substrate is freely deformed to facilitate the division of the substrate. I have to.
  • the plate thickness of the substrate made of a brittle material is at least 0.5 mm or less, the substrate is surely prevented from being divided by being adsorbed on the substrate mounting surface and restraining the deformation of the substrate.
  • the plate thickness is at least 2 mm or more, since the substrate is lifted from the substrate mounting surface at the time of break processing and the substrate is deformed freely to promote the division of the substrate, the thickness of the thin plate substrate is also increased. Even a plate substrate can be divided while accurately controlling the substrate state so that the substrate state becomes a desired state. For 0.5 mm to 2 mm, it is preferable to perform both suction during scribe processing and levitation during break processing so as to be surely divided after the break processing.
  • FIG. 1 is an overall configuration diagram of a laser processing apparatus LM1 that is an embodiment of the present invention.
  • the perspective view which shows the structure of a long axis direction switching part.
  • the figure which shows the structure when a long axis direction switching part is a 1st state, and the direction which an elliptical laser advances.
  • the figure which shows the direction when a long axis direction switching part is a 2nd state, and the direction which an elliptical laser advances.
  • the figure which shows the control system of the laser processing apparatus of FIG. The flowchart when performing general machining mode. The flowchart when performing thick plate processing mode or thin plate processing mode.
  • FIG. 1 is an overall configuration diagram of a laser processing apparatus LM1 according to an embodiment of the present invention.
  • the laser processing apparatus LM1 mainly includes a laser light source 10, a laser scanning optical system 20, a table 40, a substrate guiding mechanism 50, and a trigger mechanism 60.
  • a CO 2 laser is used for the laser light source 10.
  • a CO laser or excimer laser may be used instead of the CO 2 laser.
  • a laser beam (original beam L0) having a circular cross section is emitted from the laser light source 10.
  • the laser scanning optical system 20 can be broadly divided into a beam shaping unit 21 that adjusts the cross-sectional shape of the laser beam, a beam cross-sectional enlargement unit 24 that expands and emits the beam diameter of the laser beam, and guides the laser beam to the substrate.
  • a scanning mechanism unit 22 that scans the beam spot BS by a laser optical system that forms the laser spot BS thereon and a moving mechanism that moves the laser optical system along the table surface (XY direction), a beam shaping unit 21, and a beam cross-section enlargement
  • An optical path adjusting unit 23 that guides the laser beam emitted from any one of the units 24 to the scanning mechanism unit 22, and a beam cross-section switching that switches the optical path of the laser beam (original beam) between the beam shaping unit 21 and the beam cross-section expanding unit 24.
  • Mechanism 29 Of the table surfaces, the X direction is the scanning axis direction (the scribing direction), and the Y direction is the feed axis direction.
  • the beam shaping unit 21 shapes the original beam emitted from the laser light source 10 into a parallel beam having an elliptical cross-sectional shape and a plurality of optical elements for adjusting the major axis diameter and minor axis diameter of the parallel beam. Consists of.
  • FIG. 2A is a diagram illustrating a configuration example of the beam shaping unit 21 that emits an elliptical parallel beam.
  • the beam shaping unit 21 includes a first parabolic mirror (concave surface) M1, a second parabolic mirror (convex surface) M2, a third parabolic mirror M3 (convex surface), and a fourth parabolic mirror M4 (concave surface). 4 optical elements.
  • the first parabolic mirror (concave) M1 and the second parabolic mirror (convex) M2 by matching the focal point of each other, are arranged so that the confocal F 12.
  • the third parabolic mirror (convex) M3 and the focal point of each other match also the fourth parabolic mirror (concave) M4, are arranged so that the confocal F 34.
  • the traveling direction of the laser beam from the first parabolic mirror (concave surface) M1 to the second parabolic mirror (convex surface) M2 is the XY plane direction, and the laser beam reflected by the second parabolic mirror M2 is the first one.
  • the four parabolic mirrors M3 are directed so that the traveling direction of the laser beam from the third parabolic mirror (convex surface) M3 toward the fourth parabolic mirror (concave surface) M4 is the XZ plane.
  • An object mirror is arranged in three dimensions.
  • the first parabolic mirror M1 reflects the original beam L0 (see FIG. 2B) having a circular cross section traveling in the X direction in the XY plane direction.
  • the beam width in the Z direction remains the same, and the beam width in the Y direction travels while converging, and enters the second parabolic mirror M2.
  • the second parabolic mirror M2 by are arranged so that the confocal F 12, when reflecting the laser beam focused in the Y direction, becomes again parallel beam L1 (see FIG. 2 (c)) , Proceeds toward the X direction.
  • the beam width in the Z direction of the parallel beam L1 remains the original beam L0, and becomes a laser beam having an elliptical cross section in which the beam width in the Y direction is reduced.
  • the beam width in the Y direction remains unchanged, and the beam width travels in the XZ plane while expanding the beam width in the X direction. It enters the fourth parabolic mirror M4.
  • Fourth parabolic mirror M4 by are arranged so that the confocal F 34, when reflecting the laser beam to expand in the X direction, is again collimated beam L2 (see FIG. 2 (d)) , Proceeds toward the X direction.
  • the beam width in the Z direction of the parallel beam L2 is larger than that of the original beam L0, and the beam width in the Y direction is a laser beam having a long major axis elliptical cross-section reduced in comparison with the original beam.
  • the parallel beam L2 having an elliptical cross-sectional shape shaped by the beam shaping unit 21 forms an elliptical beam spot BS on the substrate G via the optical path adjustment unit 23 and the scanning mechanism 22 in the subsequent stage. . Therefore, by adjusting the optical constants of these four parabolic mirrors M1 to M4, it is possible to form a desired elliptical beam spot in which the major axis and the minor axis are independently adjusted.
  • the beam section enlarging unit 24 includes a combination lens 28 that expands the beam diameter of the original beam L0 from the laser light source and emits it as a parallel beam.
  • an expanded parallel light beam can be obtained by combining a concave lens and a convex lens.
  • the cross-sectional area of the expanded beam cross section is adjusted to be larger than the elliptical beam formed by the beam shaping unit 21. This is because, in general, when a laser break is performed after laser scribing, it is easier to break if heating is performed in a wide range. However, you may make it perform a break process with the same beam spot shape as the time of a scribe process. In that case, it is not necessary to provide the beam cross-section enlarged portion 24.
  • the beam cross-section switching mechanism 29 includes two reflecting mirrors M21 and M22, and can enter and exit the optical path of the laser beam by a driving mechanism (not shown).
  • a driving mechanism not shown
  • the two reflecting mirrors M21 and M22 are placed on the optical path, the optical path of the laser beam toward the beam shaping unit 21 is switched toward the beam cross-section expanding unit 24, and the circular shape of the parallel light beam expanded by the combination lens 28 is obtained.
  • the beam travels to the optical path adjustment unit 23. Therefore, depending on whether the optical path of the laser beam is directed to the beam shaping unit 21 or the beam cross-section expanding unit 24, either the elliptical beam or the expanded circular beam is incident on the optical path adjustment unit 23. It is like that.
  • the optical path adjustment unit 23 includes a long-axis direction switching unit 30 and a plane mirror M6, and is provided between the beam shaping unit 21 and the scanning mechanism unit 22.
  • the optical path adjustment unit 23 performs optical path adjustment for guiding an elliptical beam (enlarged circular beam) to the scanning mechanism unit 22 and performs adjustment to change the major axis direction of the laser beam.
  • FIG. 3 is a perspective view showing a configuration of the long axis direction switching unit 30.
  • FIG. 4 is a diagram showing the configuration when the major axis direction switching unit 30 is in the first state and the direction in which the laser beam travels (FIG. 4A is a plan view, and FIG. 4B is A in FIG. 4A). Sight).
  • FIG. 5 is a diagram showing the configuration when the major axis direction switching unit 30 is in the second state and the direction in which the laser beam travels (FIG. 5 (a) is a plan view, and FIG. 5 (b) is FIG. 5 (a)). A view in FIG.
  • the long-axis direction switching unit 30 includes a plane mirror group (M11 to M16).
  • the plane mirror M11 is a movable mirror that is rotated 90 degrees by a support shaft 31b that is rotated by a motor 31a, and is used as the optical path switching mechanism 31.
  • the plane mirror M16 is moved in the Y-axis direction by the slide mechanism 32.
  • the plane mirror M11 and the plane mirror M16 are interlocked so that the first position indicated by the solid line in FIGS. 3 and 4 and the second position indicated by the alternate long and short dash line in FIG. 3 and indicated by the solid line in FIG. 5 are switched. .
  • the elliptical beam L2 traveling in the X direction from the beam shaping unit 21 is reflected in the Y direction by the plane mirror M11, reflected in the ⁇ Z direction by the plane mirror M12, and by the plane mirror M13.
  • the reflection in the ⁇ Y direction and the reflection in the ⁇ Z direction by the plane mirror M16 are repeated, and the light travels to the plane mirror M6.
  • the optical path through which the laser beam passes is defined as the first optical path.
  • the laser beam L2 traveling in the X direction from the beam shaping unit 21 is reflected in the ⁇ Y direction by the plane mirror M11, reflected in the ⁇ X direction by the plane mirror M14, and the plane mirror M15.
  • the reflection in the -Z direction is repeated and proceeds to the plane mirror M6.
  • an optical path through which the laser beam passes is defined as a second optical path.
  • the first optical path and the second optical path cross each other at the position of the plane mirror M16, and when using the laser beam that has passed through the second optical path, the plane mirror M16 is removed from the optical path by the slide mechanism 32.
  • the laser beam (elliptical beam) passing through the first optical path and the laser beam (elliptical beam) passing through the second optical path have the same cross-sectional shape, and the major axis direction is shifted by 90 degrees. Therefore, by selecting the optical path in the optical path switching mechanism 31, two types of elliptical beams whose major axis directions are orthogonal to each other can be selected and emitted.
  • the long-axis direction switching unit 30 bends the parallel beam L2 traveling in the X direction to form a parallel beam L3 traveling in the Z direction.
  • the optical path length (distance between M4 and M11) of the parallel beam L2 the position adjustment in the X direction with respect to the scanning mechanism unit 22 is performed.
  • the plane mirror M6 bends the parallel beam L3 traveling in the ⁇ Z direction in the ⁇ Y direction to form a parallel beam L4 traveling in the ⁇ Y direction.
  • the optical path length (distance between M16 and M6) of the parallel beam L3 the height (Z direction) with respect to the scanning mechanism 22 is adjusted.
  • the position adjustment in the Y direction with the scanning mechanism unit 22 is performed. Is done.
  • the scanning mechanism unit 22 (laser optical system, moving mechanism) that scans the beam spot BS will be described.
  • the scanning mechanism unit 22 is integrally fixed to the guide mirror 25 whose axis is directed in the Y direction, the plane mirror M7 that is movably attached along the guide rail 25 by a drive mechanism (not shown), and the axis is X
  • the guide rail 26 is directed in the direction
  • the plane mirror M8 is movably attached along the guide rail 26 by a driving mechanism (not shown).
  • the plane mirror M7 and the plane mirror M8 constitute a laser optical system that forms a beam spot BS by irradiating the substrate with the elliptical beam emitted from the long-axis direction switching unit 30.
  • the guide rails 25 and 26 and a driving mechanism constitute a moving mechanism for moving the laser optical system.
  • the two guide rails 25 may be provided in parallel with the table 40 interposed therebetween, and the guide rail 26 may be supported so as to be movable from both sides.
  • the position of the guide rail 25 closest to the plane mirror M6 is set as the origin position of the plane mirror M7.
  • the angle of the plane mirror M7 is adjusted so that the parallel beam L4 from the plane mirror M6 is reflected at the origin position and the parallel beam L5 is guided to the plane mirror M8.
  • the parallel beam L4 travels in the -Y direction. Since the plane mirror M7 moves in the Y direction along the guide rail 25, the parallel beam L4 is reflected by the plane mirror M7 and guided to the plane mirror M8 regardless of the position of the plane mirror M7 on the guide rail 25. .
  • the plane mirror M8 reflects the parallel beam L5 and forms a beam spot BS on the substrate G. At this time, the parallel beam L5 travels in the ⁇ X direction. Since the plane mirror M8 moves in the X direction along the guide rail 26, the parallel beam L5 is reflected by the plane mirror M8 and has the same shape on the substrate G regardless of the position of the plane mirror M8 on the guide rail 26. A beam spot BS is formed.
  • the major axis direction of the beam spot BS formed on the substrate faces the Y direction when the major axis direction switching unit 30 selects the first optical path. Further, when the second optical path is selected, it faces in the X direction. Therefore, when the plane mirror M8 is moved (scanned) in the X direction, the scanning direction and the major axis direction can be matched by selecting the second optical path. Further, when the plane mirror M8 is moved (scanned) in the Y direction, the scanning direction and the major axis direction can be matched by selecting the first optical path. In addition, even when either the first optical path or the second optical path is selected, the beam spot BS is irradiated onto the substrate with a parallel light beam, so even when the substrate is placed on a table surface described later. Even when the substrate is levitated from the table surface, it is irradiated with the same beam spot.
  • FIG. 6 is a view showing a cross-sectional structure of the table 40.
  • the table 40 is made of a porous member (for example, porous ceramic), and has an upper surface member 41 on which the substrate G (see FIG. 1) is placed, and is in close contact with the periphery of the upper surface member 41.
  • a vacuum pump 46 that depressurizes the hollow space 42a through the valve 46a, and a flow source 43, an external flow channel 44, and an air source 47 that sends pressurized air to the hollow space 42a through the pressure regulating valve 47a.
  • the hollow space 42 a, the flow path 43, the external flow path 44, the opening degree adjustment valve 46 a, and the vacuum pump 46 form an adsorption mechanism MA that adsorbs the substrate G to the upper surface member 41.
  • the adsorption mechanism MA has an adsorption force in two stages, a strong adsorption state (adsorption force of about 30 MPa or more) and a normal adsorption state (adsorption force of about 0.03 MPa to 0.3 MPa) by the opening control valve 46a. Can be adjusted. In the former adsorption state, the glass substrate is strongly adsorbed so as not to bend even when the laser beam is irradiated. On the other hand, in the latter suction state, the suction is performed to such an extent that the position which is a general purpose of the suction mechanism can be fixed and the movement of the substrate can be prevented.
  • the hollow space 42 a, the flow path 43, the external flow path 44, the on-off valve 47 a, and the air source 47 form a floating mechanism MB that floats the substrate G on the upper surface member 41.
  • the levitation mechanism MB is used together with a substrate guiding mechanism 50, which will be described later, when the substrate is broken. Further, it is used together with the substrate guiding mechanism 50 when adjusting the position of the substrate in the horizontal direction.
  • FIG. 7 is a view showing the structure of the substrate guiding mechanism 50.
  • the substrate guiding mechanism 50 includes a pair of movable contact portions 51a and 51b attached in the vicinity of the diagonal corners 48a and 48b of the square table 40.
  • Each of the movable contact portions 51a and 51b has articulated arms 53a and 53b that are translated and turned around the support shafts 52a and 52b by a driving mechanism (not shown).
  • Metal contact members 54a and 54b that are turned by a drive mechanism (not shown) are attached to the tip portions of the multi-joint arms 53a and 53b.
  • the abutting members 54a and 54b are attached so that their tips branch to the left and right, respectively, and the portion in contact with the substrate G has a cylindrical shape.
  • the axial direction of this cylinder is oriented in the vertical direction.
  • the air source 47 (FIG. 6) is operated to push the substrate G with the contact members 54a and 54b in a state where the substrate G is lifted, The substrate G moves to a desired position while lightly contacting the contact members 54a and 54b. Further, when the positions of the contact members 54a and 54b are stopped at desired positions, the positions can be fixed in a floating state. Thereafter, the substrate G can be adsorbed at the same position by stopping the air source 47 and operating the vacuum pump 46.
  • the alignment mark is photographed by using the cameras 55a and 55b in which the attachment positions with respect to the coordinate system defined in the table 40 are measured in advance.
  • the position of the substrate G can be automatically adjusted by calculating the amount of displacement of the substrate G from the current position, calculating the amount of movement, and moving it by the substrate guiding mechanism 50.
  • the trigger mechanism 60 includes a cutter wheel 61, an elevating mechanism 62, a support shaft 63, and an articulated arm 64.
  • the multi-joint arm 64 moves in the same manner as the multi-joint arms 53 a and 53 b of the board guiding mechanism 50.
  • the cutting edge of the cutter hole 61 is directed in the X direction.
  • the articulated arm 64 causes the cutter wheel 61 to be directly above the position where the initial crack is formed. Then, the initial crack TR is formed by temporarily lowering and pressing the cutter wheel 61 by the lifting mechanism 62.
  • a second trigger mechanism 65 with the cutting edge directed in the Y direction is provided on the front side or the back side in FIG.
  • efficient processing can be performed.
  • the substrate guiding mechanism 50 can be operated to rotate the substrate G by 90 degrees to form an initial crack on an adjacent side.
  • FIG. 8 is a block diagram showing a control system of the laser processing apparatus LM1.
  • the laser processing apparatus LM1 includes a suction / levitation mechanism drive unit 81 that drives the suction mechanism MA and the floating mechanism MB of the table 40, a substrate guidance mechanism drive unit 82 that drives the movable contact portions 51a and 51b of the substrate guidance mechanism 50, and a trigger.
  • the cooling nozzle driving unit 86 that sprays the refrigerant from the refrigerant nozzle
  • the camera driving unit 87 that performs imaging by the CCD cameras 55a and 55b
  • the long axis direction switching unit 30 Optical path switching mechanism drive unit 88 for driving the optical path switching mechanism 31 and the slide mechanism 32 interlocked therewith, beam cross section
  • the driving systems of the beam cross-section switching mechanism driving unit 89 for driving the exchange mechanism 29 is controlled by the configured control unit 80 by a computer (CPU).
  • the control unit 80 is connected to an input unit 91 including an input device such as a keyboard and a mouse, and a display unit 92 including a display screen for performing various displays. Necessary messages are displayed on the display screen and necessary. Instructions and settings can be entered.
  • a mode information storage unit 93 is provided, and information on the general processing mode, the thick plate processing mode, and the thin plate processing mode is stored.
  • the mode information storage unit 93 is provided in a memory device (HDD or the like). Each processing mode information stores a different sequence program, and when one of them is selected, the processing mode program is executed by the control unit.
  • a mode input for selecting a mode is performed by the input unit 91.
  • the control unit 80 executes the general machining mode when no mode input is performed or when the general machining mode is selected. On the other hand, when the thick plate processing mode and the thin plate processing mode are selected, the selected processing mode is executed.
  • the substrate In general processing mode, in order to be able to use both when the substrate thickness is thin and thick, the substrate is strongly adsorbed using an adsorption mechanism during scribe processing and the substrate is lifted using a levitating mechanism during break processing. Surface.
  • the thick plate processing mode is used when the substrate is thick. When the thickness of the substrate is thick, there is almost no problem that the substrate is accidentally divided during the scribe process, but there is a problem that the substrate is not divided during the break process. Therefore, the substrate is levitated using the levitating mechanism during the break. During scribing, the suction mechanism is used in a normal suction state for positioning.
  • the thin plate processing mode is used when the thickness of the substrate is thin.
  • the substrate When the thickness of the substrate is thin, there is hardly any problem that makes it difficult to divide during the break processing, but there arises a problem that the substrate is suddenly divided during the scribe processing. Therefore, the substrate is strongly adsorbed at the time of scribing to suppress the generation of bending moment. In the break, the substrate G is divided without rising, but the substrate is lifted by a floating mechanism so that the substrate G can be more reliably divided.
  • Thick plate processing mode is used for substrates with a thickness of at least 2 mm. This is because if the thickness is greater than this, it is difficult to divide the substrate unless the substrate is lifted.
  • the thin plate processing mode is used for a substrate having a thickness of at least 0.5 mm. This is because if it is thinner than this, it will be divided during scribing unless the bending of the substrate is positively suppressed.
  • An intermediate substrate having a thickness of 0.5 mm to 2 mm is preferably adsorbed during scribing and floated during breaking.
  • a threshold value for example, a plate thickness of 1 mm
  • a thick plate processing mode may be set, and when it is thin, a thin plate processing mode may be set.
  • the mode selection may be performed by inputting a numerical value of the board thickness from the input unit.
  • a mechanism for measuring the thickness of the substrate may be provided so that the processing mode is automatically selected based on the measurement result.
  • FIG. 9 is a flowchart showing a first example of the operation by the laser processing apparatus LM1.
  • This example is an operation when the general machining mode is executed.
  • the substrate G is positioned using the substrate guiding mechanism 50 (S101).
  • the alignment marks on the substrate G are detected by the cameras 55a and 55b, and the amount of displacement is obtained.
  • the movable contact portions 51 a and 51 b are driven to bring the contact members 54 a and 54 b closer to the substrate side surface of the substrate G.
  • the flying mechanism MB is operated to lift the substrate G from the table surface.
  • the movement of the glass substrate G in the horizontal direction is restricted by the contacts (four places) with the contact members 54a and 54b.
  • the movable contact portions 51a and 51b are driven to move (translate and rotate) the substrate G in the horizontal direction and stop at a position where the amount of positional deviation becomes zero.
  • positioning is completed in a state where the x direction of the substrate G coincides with the X direction of the laser scanning optical system.
  • the floating mechanism MB is stopped and the suction mechanism MA is operated to fix the substrate G to the table surface.
  • the opening degree adjusting valve 46a is set to be strongly adsorbed.
  • the trigger mechanisms 60 and 65 are driven to create the initial crack TR at the scribe start positions in the X direction and the Y direction of the glass substrate G (S102).
  • laser scribing in the x direction is performed (S103).
  • the long-axis direction switching unit 30 is driven so that the long axis of the beam spot BS is directed in the X direction to select the second optical path.
  • the scanning mechanism unit 22 is driven to adjust the positions of the plane mirrors M7 and M8, and the plane mirror M8 is moved (scanned) in the X direction while irradiating the laser beam, thereby scribing in the x direction of the glass substrate.
  • the substrate G is strongly adsorbed to the table surface, and the substrate G hardly generates a bending moment, so that it is not suddenly divided.
  • the movement in the Y direction (laser stop) by the plane mirror M7 and the movement in the X direction (scan) (laser irradiation) by the plane mirror M8 are alternately performed.
  • the first optical path is selected by driving the long axis direction switching unit 30 so that the long axis of the beam spot BS is oriented in the Y direction.
  • the scanning mechanism unit 22 is driven to adjust the positions of the plane mirrors M7 and M8, and the plane mirror M7 is moved (scanned) in the Y direction while irradiating the laser beam, thereby performing scribing in the y direction of the glass substrate.
  • the substrate G is strongly adsorbed to the table surface, and since the bending moment is hardly generated in the substrate G, it is not divided. With the above processing, the scribe processing in the x direction and the y direction is completed.
  • laser breaks in the y direction and the x direction are performed (S105, S106).
  • Laser break may be performed first from the y direction, but laser break may be performed after returning to the x direction.
  • the substrate G is brought into a floating state by the floating mechanism MB.
  • the beam section switching mechanism 29 is driven to switch the laser beam from the laser light source 10 so as to go to the beam section expanding section 28.
  • the substrate G is irradiated with the enlarged circular beam, and laser break by the circular beam is performed.
  • the laser beam is scanned in the same manner as in laser scribing. With the above operation, laser breaks in the x and y directions are performed, and the substrate G is divided into squares.
  • FIG. 10 is a flowchart showing a second example of the operation by the laser processing apparatus LM1. This example shows the operation when the mode selection is performed and the thick plate processing mode or the thin plate processing mode is selected.
  • the substrate G is positioned using the substrate guiding mechanism 50 (S201). Subsequently, the trigger mechanisms 60 and 65 are driven to create the initial crack TR at the scribe start positions in the X direction and the Y direction of the glass substrate G (S202).
  • the above processes are the same as S101 and S102.
  • the mode input result is determined (S203).
  • the process proceeds to S103 of the operation example 1 described above, and laser scribing and laser breaking are performed.
  • the process proceeds to S204, and when the thick plate processing mode is selected, the process proceeds to S210.
  • laser breaks in the y direction and the x direction are performed (S206, S207).
  • the substrate G is temporarily brought into a floating state by the floating mechanism MB.
  • the beam section switching mechanism 29 is driven to switch the laser beam from the laser light source so as to go to the beam section expanding section 28.
  • the laser beam is scanned in the same manner as in laser scribing. With the above operation, laser breaks in the x and y directions are performed, and the substrate G is divided into squares.
  • laser breaks in the y direction and the x direction are performed (S212, S213).
  • the substrate G is always brought into a floating state by the floating mechanism MB.
  • the beam section switching mechanism 29 is driven to switch the laser beam from the laser light source so as to go to the beam section expanding section 28.
  • the substrate G is divided into squares.
  • the present invention can be used in a laser processing apparatus that performs a cutting process on a glass substrate or the like.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Thermal Sciences (AREA)
  • Laser Beam Processing (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Jigs For Machine Tools (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

La présente invention concerne un appareil de traitement laser permettant à chacune des étapes du traitement une bonne gestion de l'état de coupe d'un substrat. Le procédé garantit ainsi que le substrat ne sera pas coupé lors d'une opération de rainurage sous rayonnement laser, et que le substrat sera coupé lors d'une opération ultérieure de séparation sous rayonnement laser. Cet appareil est pourvu de plusieurs éléments: une table (40) comportant, d'une part un mécanisme d'aspiration (MA) pour aspirer un substrat au travers d'un élément poreux (41) c'est-à-dire un élément servant de surface de positionnement du substrat, et d'autre part un mécanisme de flottement (MB) permettant de faire flotter le substrat par insufflation d'un gaz vers le substrat au travers de l'élément poreux; un module de mise en butée (54) permettant de limiter le déplacement horizontal du substrat en venant en butée contre la face latérale du substrat mis à flotter; une source de lumière laser (10); un système optique de balayage du faisceau laser (20) permettant de faire effectuer au faisceau laser produit par la source de lumière laser un balayage de la surface du substrat; et un contrôleur (80). Pour éviter la découpe du substrat, le contrôleur met en œuvre le mécanisme d'aspiration de façon à limiter la déformation du substrat. En outre, pour favoriser la découpe du substrat, le contrôleur met en œuvre le mécanisme de flottement de façon à laisser le substrat se déformer librement lors de l'opération de séparation.
PCT/JP2008/065514 2007-12-21 2008-08-29 Appareil et procédé de traitement laser WO2009081621A1 (fr)

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CN2008801221076A CN101903129B (zh) 2007-12-21 2008-08-29 激光加工装置及激光加工方法
JP2009546972A JP5070299B2 (ja) 2007-12-21 2008-08-29 レーザ加工装置およびレーザ加工方法
KR1020107002395A KR101142290B1 (ko) 2007-12-21 2008-08-29 레이저 가공 장치 및 레이저 가공 방법

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JP2007-330192 2007-12-21

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Cited By (4)

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WO2015080969A1 (fr) * 2013-11-26 2015-06-04 Corning Incorporated Procédé et système de découpe laser d'un matériau en feuille
CN107030390A (zh) * 2016-02-04 2017-08-11 苏州沃特维自动化系统有限公司 一种太阳能电池片切割装置
WO2019049596A1 (fr) * 2017-09-07 2019-03-14 Ｓｔｓ合同会社 Outil de fixation
CN113681172A (zh) * 2021-08-06 2021-11-23 深圳市鑫达辉软性电路科技有限公司 一种柔性电路板生产用裁剪装置

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CN103568384B (zh) * 2012-08-10 2017-10-03 赛恩倍吉科技顾问（深圳）有限公司 保护盖及其加工方法
KR101465014B1 (ko) * 2013-06-26 2014-11-26 주식회사 엘티에스 강화유리 절단장치
JP6829118B2 (ja) 2017-03-16 2021-02-10 株式会社日本製鋼所 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法
CN113478101A (zh) * 2021-07-21 2021-10-08 常州机电职业技术学院 一种芯片基板切割设备用的加工防护装置

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JPH11785A (ja) * 1997-06-11 1999-01-06 Matsushita Electric Ind Co Ltd レーザー加工機の被加工物位置決め装置
JP2005088014A (ja) * 2003-09-12 2005-04-07 Sumitomo Heavy Ind Ltd クランプ機構及びクランプ機構を有するレーザ加工機
WO2007037118A1 (fr) * 2005-09-28 2007-04-05 Shibaura Mechatronics Corporation Dispositif, système et procédé de découpe laser pour un matériau cassant

Cited By (5)

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WO2015080969A1 (fr) * 2013-11-26 2015-06-04 Corning Incorporated Procédé et système de découpe laser d'un matériau en feuille
CN107030390A (zh) * 2016-02-04 2017-08-11 苏州沃特维自动化系统有限公司 一种太阳能电池片切割装置
WO2019049596A1 (fr) * 2017-09-07 2019-03-14 Ｓｔｓ合同会社 Outil de fixation
JPWO2019049596A1 (ja) * 2017-09-07 2019-11-07 Ｓｔｓ合同会社 取付具
CN113681172A (zh) * 2021-08-06 2021-11-23 深圳市鑫达辉软性电路科技有限公司 一种柔性电路板生产用裁剪装置

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KR20100035174A (ko) 2010-04-02
CN101903129B (zh) 2013-12-18
TW200927352A (en) 2009-07-01
KR101142290B1 (ko) 2012-05-07
TWI387502B (zh) 2013-03-01
JP5070299B2 (ja) 2012-11-07
CN101903129A (zh) 2010-12-01

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