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WO2007037118A1 - Dispositif, système et procédé de découpe laser pour un matériau cassant - Google Patents

Dispositif, système et procédé de découpe laser pour un matériau cassant Download PDF

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Publication number
WO2007037118A1
WO2007037118A1 PCT/JP2006/318039 JP2006318039W WO2007037118A1 WO 2007037118 A1 WO2007037118 A1 WO 2007037118A1 JP 2006318039 W JP2006318039 W JP 2006318039W WO 2007037118 A1 WO2007037118 A1 WO 2007037118A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
processed
laser
unit
moving
Prior art date
Application number
PCT/JP2006/318039
Other languages
English (en)
Japanese (ja)
Inventor
Hirotaka Koyama
Masakazu Hayashi
Original Assignee
Shibaura Mechatronics Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corporation filed Critical Shibaura Mechatronics Corporation
Publication of WO2007037118A1 publication Critical patent/WO2007037118A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/221—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0869—Devices involving movement of the laser head in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/023—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
    • C03B33/03—Glass cutting tables; Apparatus for transporting or handling sheet glass during the cutting or breaking operations
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/09—Severing cooled glass by thermal shock
    • C03B33/091—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Definitions

  • the present invention relates to a laser cleaving apparatus that locally heats a work substrate made of a brittle material (hard and brittle material), and causes the work substrate to crack by the thermal stress.
  • the present invention relates to a brittle material laser cleaving apparatus and method capable of realizing high-quality and high-speed cleaving of a substrate to be processed such as a brittle material.
  • the “substrate to be processed” means a general substrate having brittle material strength, and is not limited to a glass substrate, but includes various plate-like substrates including ceramic materials such as silicon, gallium arsenide, and sapphire. Shall also be included.
  • a glass substrate for a flat panel display also referred to as an "FPD substrate”
  • a cleaving process for an FPD substrate usually holds the FPD substrate. It is performed in a state where it is placed horizontally on a mechanism (such as a mounting table).
  • a mounting table having a surface shape that reduces the contact area with the FPD substrate as much as possible is used as a holding mechanism for holding the FPD substrate.
  • a pressure air table that can hold the FPD substrate buoyant is used.
  • the conventional method using the above-described holding mechanism has a problem that the holding mechanism must be designed in consideration of the thickness tolerance, warpage, internal residual stress, and the like inherent in the FPD substrate.
  • Patent Document 1 JP-A-7-328781
  • Patent Document 2 JP-A-7-323384
  • Patent Document 3 Japanese Patent Laid-Open No. 2003-34545
  • the present invention has been made in consideration of such points, and can perform high-quality and high-speed cutting of a substrate to be processed that has brittle material strength regardless of the size of the substrate to be covered.
  • An object of the present invention is to provide a brittle material laser cleaving apparatus and method that can be realized. Means for solving the problem
  • the first solution of the present invention is a method of locally heating a substrate to be processed, which is a brittle material cover, and cracking the substrate by causing the thermal stress to crack.
  • a substrate holding mechanism that holds a substrate to be processed, and a laser beam is irradiated onto the substrate to be processed held by the substrate holding mechanism to locally heat the substrate to be processed.
  • the laser irradiation unit that causes cracks in the substrate to be processed and the cracks generated in the substrate to be processed by the laser irradiation unit so that the cracks propagate along the planned cutting line of the substrate to be processed.
  • a moving unit that moves a region heated locally on the processing substrate relative to the processing substrate, and the substrate holding mechanism is a normal line applied to the processing substrate.
  • Directional holding force The substrate to be processed while the state or where the expected splitting line expected splitting line of the substrate to be processed to be suppressed is oriented substantially vertically fell by a predetermined angle from the vertical direction to a minimum
  • a laser cleaving apparatus comprising: a substrate surface holding portion that is held from at least one surface side; and a lower end support portion that supports a lower end portion of the substrate to be processed held by the substrate surface holding portion.
  • the substrate surface holding portion of the substrate holding mechanism is in a state where the planned cutting line of the substrate to be processed is tilted by a predetermined angle from the vertical direction. It is preferable to have a holding table for holding the substrate to be processed from the side of one side thereof.
  • the holding table has at least one pressure air hole for ejecting the pressure air toward the substrate to be processed, and the pressure air supply mechanism for supplying the pressure air by the pressure air hole It is good to be connected to.
  • the holding table may have a contact structure capable of minimizing a restraining force with respect to the movement of the substrate to be covered in the in-plane direction.
  • the substrate surface holding portion of the substrate holding mechanism is in a state in which a planned cutting line of the substrate to be processed is oriented in a substantially vertical direction or the planned cutting line.
  • each holding table has at least one or more pressure air holes for ejecting the pressure air toward the substrate to be processed, and the pressure air holes for supplying the pressure air. It may be connected to a supply mechanism. Further, each holding table may have a contact structure capable of minimizing a restraining force against movement of the substrate to be processed in an in-plane direction.
  • the lower end support portion of the substrate holding mechanism extends in a direction perpendicular to the planned cutting line in an in-plane direction of the substrate to be processed. It is preferable to have a contact structure capable of minimizing the restraining force against the movement of the substrate to be processed.
  • the lower end support portion of the substrate holding mechanism moves the lower end support portion relative to the substrate surface holding portion so as to arbitrarily change the support position of the substrate to be caloeed. It is good to have a mechanism.
  • the lower end support part of the substrate holding mechanism may have a load sensor for detecting a load applied by the substrate to be processed.
  • control device that controls the support position moving mechanism based on a detection result detected by the load sensor may be further provided.
  • the control device may control at least one of the moving unit and the laser irradiation unit based on a detection result detected by the load sensor.
  • the crack generated in the workpiece substrate by the laser irradiation unit may be along a cutting schedule line of the workpiece substrate. It is preferable to move the locally heated region on the substrate to be processed relative to the substrate to be processed so as to progress from the upper side to the lower side of the substrate to be processed.
  • a cooling unit for locally cooling a region heated locally on the workpiece substrate by the laser irradiation unit.
  • the moving unit moves a region heated and cooled locally on the substrate to be processed by the laser irradiation unit and the cooling unit relative to the substrate to be processed. It is preferable.
  • the substrate to be processed is preferably a substrate for a flat panel display, a solar cell panel, or other functional panel.
  • the present invention locally heats a substrate to be processed, which is a brittle material cover, and cracks the substrate to be cut by the thermal stress to perform cleaving.
  • a substrate to be processed which is a brittle material cover
  • the cleaving method prepare a substrate to be cut in a state where the cutting line of the substrate to be processed is in a substantially vertical direction or the planned cutting line is tilted by a predetermined angle from the vertical direction.
  • the substrate to be processed is irradiated with a laser beam while the substrate to be processed is irradiated.
  • a crack generated in the substrate to be processed is located above the substrate to be processed along a planned cutting line of the substrate to be processed. It is preferable that the region heated locally on the substrate to be processed is moved relative to the substrate to be processed so as to progress downward from the side.
  • the region heated locally on the substrate to be processed is cooled on the substrate to be processed. It is preferable to move the region heated and cooled locally relative to the substrate to be processed.
  • the substrate surface holding portion of the substrate holding mechanism has an opening near the planned cutting line of the substrate to be processed, and the laser irradiation unit is provided on the back side of the substrate surface holding portion.
  • the substrate to be processed is cracked by locally irradiating the planned cutting line on one surface of the substrate to be processed through the opening of the substrate surface holding portion.
  • One laser irradiation unit and a substrate surface holding portion are provided on the surface side of the substrate to be processed, and the laser beam is irradiated to locally heat the cleaved line on the other surface of the substrate to be processed.
  • a second laser irradiation unit that causes a crack in the first moving unit that holds and moves the first laser irradiation unit, and a second movement that moves while holding the second laser irradiation unit. Having a unit and A laser breaking device according to symptoms.
  • the present invention is provided on the back surface side of the substrate surface holding portion, is held and moved by the first moving unit, and is a cutting line for cutting one surface of the substrate to be processed heated by the first laser irradiation unit.
  • a first cooling unit that cools the substrate and a surface of the substrate surface holding portion, and is held and moved by the second moving unit, and the other surface of the substrate to be processed heated by the second laser irradiation unit is cleaved.
  • a laser cleaving apparatus further comprising a second cooling unit for cooling the planned line.
  • the present invention provides a distance between the first laser irradiation unit and the first cooling unit held by the first moving unit, or the second laser irradiation unit and the first laser irradiation unit held by the second moving unit.
  • the laser cleaving apparatus is characterized in that the distance between the two cooling units can be arbitrarily changed.
  • the present invention relates to a relative position between the first laser irradiation unit held by the first moving unit and the second laser irradiation unit held by the second moving unit, or held by the first moving unit.
  • the laser cleaving apparatus is characterized in that the relative position between the first cooling unit and the second cooling unit held by the second moving unit can be arbitrarily changed.
  • the relative moving speed and Z or moving direction of the first laser irradiation unit and the first cooling unit held by the first moving unit with respect to the substrate to be processed are each held by the second moving unit.
  • the second laser irradiation unit and the second cooling unit that have been moved can be changed independently of the relative moving speed and Z or moving direction with respect to the substrate to be processed.
  • the relative moving speed and Z or moving direction of the first laser irradiation unit and the first cooling unit held by the first moving unit with respect to the substrate to be processed are each held by the second moving unit.
  • the laser cleaving apparatus is characterized in that the relative movement speed and Z or movement direction of the second laser irradiation unit and the second cooling unit are different with respect to the substrate to be processed.
  • the relative movement speed and Z or movement direction of the first moving unit holding the first laser irradiation unit and the first cooling unit with respect to the substrate to be processed are such that the second laser irradiation unit and The laser cleaving apparatus, wherein the second moving unit holding the second cooling unit can be changed independently of the relative moving speed and Z or moving direction with respect to the substrate to be processed.
  • the present invention relates to the distance between the first laser irradiation unit and the first cooling unit held by the first moving unit, and the second laser irradiation unit and the second laser irradiation unit held by the second moving unit.
  • the distance between the two cooling units can be adjusted in real time, and the first laser irradiation unit held by the first moving unit and the second laser held by the second moving unit.
  • the relative position between the first cooling unit and the relative position between the first cooling unit held by the first moving unit and the second cooling unit held by the second moving unit can be adjusted in real time.
  • the laser cleaving apparatus is characterized in that the relative moving speed and Z or moving direction of the cooling unit with respect to the substrate to be processed can be adjusted in real time.
  • the irradiation condition of the laser beam irradiated onto the substrate to be processed from the first laser irradiation unit and the second laser irradiation unit is adjustable, and the first cooling unit and the second cooling unit
  • the laser cleaving apparatus is characterized in that the cooling condition for cooling the cleaved line of the heated substrate to be processed is adjustable.
  • the present invention includes the laser cleaving apparatus described above and a substrate to be processed in which two or more plate-like members having brittle material strength are bonded together, and the laser cleaving apparatus causes a crack in the substrate to be processed.
  • a laser cleaving system characterized by cleaving.
  • the present invention is a laser cleaving system characterized in that the substrate power is a flat panel display or a solar cell panel.
  • the substrate to be processed that is to be cleaved is placed in a state in which the planned cleaving line of the substrate to be cleaved faces in a substantially vertical direction or is tilted by a predetermined angle from the vertical direction by the substrate holding mechanism.
  • the cleaving process is performed by relatively moving the region heated locally on the workpiece substrate positioned by the substrate holding mechanism.
  • the holding force in the normal direction applied to the processed substrate can be minimized.
  • the restraining force (friction resistance, etc.) against the movement of the substrate to be processed in the direction perpendicular to the cutting line (horizontal direction) in the in-plane direction of the substrate to be processed can be minimized.
  • FIG. 1A is a perspective view showing a brittle material laser cleaving apparatus according to a first embodiment of the present invention.
  • FIG. 1B is a side view of the laser cleaving apparatus shown in FIG.
  • FIG. 2 is a perspective view of an essential part showing a modified example of a holding table of a substrate holding mechanism that holds a substrate to be processed in the laser cleaving apparatus shown in FIGS. 1A and 1B.
  • FIG. 3A is a perspective view showing a brittle material laser cleaving apparatus according to a second embodiment of the present invention.
  • FIG. 3B is a cross-sectional view of the laser cleaving apparatus shown in FIG.
  • FIG. 4 is a perspective view showing a laser cleaving apparatus for a brittle material according to a third embodiment of the present invention.
  • FIG. 5 is an enlarged view of a V portion of the laser cleaving apparatus shown in FIG.
  • FIG. 6 is a schematic diagram for explaining the stress applied to the planned cutting line of the substrate to be cut.
  • FIG. 7 is a perspective view showing a fourth embodiment of the laser cleaving apparatus 1 according to the present invention.
  • FIG. 8 is a perspective view showing a modification of the fourth embodiment of the laser cleaving apparatus 1 according to the present invention.
  • the laser cleaving apparatus 1 locally heats a substrate to be processed 60 that also has brittle material force, and the workpiece is processed by the thermal stress.
  • the substrate 60 is cleaved by generating cracks (breaking lines) 61.
  • the substrate holding mechanism 10 that holds the substrate 60 to be processed and the substrate 60 that is held by the substrate holding mechanism 10 are cleaved.
  • a laser irradiation unit 20 and a cooling unit 30 for performing processing, and a moving unit 40 for moving the laser irradiation unit 20 and the cooling unit 30 relative to the target substrate 60 are provided.
  • a glass substrate for flat panel display also called “FPD substrate” is used as the substrate 60 to be cut.
  • the substrate holding mechanism 10 holds the normal direction applied to the substrate 60 to be processed.
  • a holding table substrate surface
  • the substrate 60 to be processed from its back side in a state where the planned cutting line 71 of the substrate 60 is tilted from the vertical direction P by a predetermined angle ⁇ so that the force is minimized.
  • Holding portion) 11 and a plurality of rollers (lower end support portions) 16 that support the lower end portion of the substrate 60 to be processed held by the holding table 11.
  • the holding table 11 has a plurality of pressure air holes 12 for ejecting the pressure air G toward the substrate 60 to be processed, and the movement of the substrate 60 to be moved in the in-plane direction. The binding force can be minimized.
  • the pressure air hole 12 is connected to a pump (pressure air supply mechanism) 15 for supplying pressure air via an internal communication hole 13 and a pressure air conduit 14 in the holding table 11.
  • Each roller 16 is pivotally attached to the holding table 11 by a support shaft 16a, and is scheduled to be cleaved in the in-plane direction of the substrate 60 to be processed as a contact structure to the lower end portion of the substrate 60 to be processed.
  • a contact structure is provided that can minimize the restraining force against the movement of the substrate 60 to be processed in the direction perpendicular to the line 71 (horizontal direction).
  • the contact force to the lower end portion of the substrate 60 to be processed is applied with a load force that is approximately the same as the weight of the substrate 60 to be processed, so that this load causes the planned cutting line in the in-plane direction of the substrate 60 to be processed.
  • the movement of the substrate 60 to be processed in the direction perpendicular to the horizontal direction (horizontal direction) 71 is restricted.
  • the roller 16 that is rotatably attached to the holding table 11 by the support shaft 16a is used as the contact structure to the lower end portion of the substrate to be processed 60, the substrate to be processed 60 is in the in-plane direction. It is possible to move freely in the direction perpendicular to the planned cutting line 71 (horizontal direction).
  • the laser irradiation unit 20 irradiates a laser beam L onto the substrate 60 to be heated and locally heats the substrate 60 to be cracked.
  • a laser oscillator 21 that emits CO laser light of about several tens of W to several hundred W, and a laser
  • a reflection mirror 22 that reflects the laser beam L emitted from the oscillator 21 and a condenser lens 23 that emits the laser beam reflected by the reflection mirror 22 are provided.
  • the cooling unit 30 is for locally cooling a region heated locally on the substrate 60 by spraying the coolant C onto the substrate 60 to be covered.
  • Water and mist mixture of water and gas
  • gas such as nitrogen
  • fine particle solid such as carbon dioxide (dry ice)
  • liquid such as alcohol, mist-like alcohol, snow-like dry ice Supply coolant C, etc.
  • a coolant supply unit 31 and a coolant conduit 32 that guides the coolant C supplied from the coolant supply unit 31 and injects the coolant C onto the surface of the substrate 60 to be processed.
  • both the laser irradiation unit 20 and the cooling unit 30 can move in the in-plane direction of the substrate to be covered 60, and the laser irradiation unit 20 and the cooling unit 30 can be moved. Therefore, the alignment can be adjusted so that the deviation is arranged in a straight line at an appropriate interval along the planned cutting line 71 on the substrate 60 to be processed!
  • the moving unit 40 is configured so that the crack 61 generated in the substrate 60 to be processed by the laser irradiation unit 20 and the cooling unit 30 propagates along the planned cutting line 71 of the substrate 60 to be processed.
  • the laser irradiation unit 20 and the cooling unit 30 are relatively moved with respect to 60, and the region (laser beam L irradiation pattern 62) heated locally on the workpiece substrate 60 is cooled.
  • the region (coolant C spray pattern 63) is moved relative to the substrate 60 to be processed.
  • the moving unit 40 is preferably configured so that the crack 61 generated in the workpiece substrate 60 progresses from the upper side to the lower side of the workpiece substrate 60 along the planned cutting line 71 of the workpiece substrate 60.
  • the laser irradiation unit 20 and the cooling unit 30 may be moved relative to the substrate 60 to be processed. As a result, as the cleaving progresses, no stress acts in the direction to suppress the cleaving, and the configuration and control of the holding mechanism can be simplified.
  • the substrate 60 to be cut is positioned on the holding table 11 of the substrate holding mechanism 10 with its lower end supported by the roller 16. .
  • the holding table 11 is maintained in a state of being tilted from the vertical direction P by a predetermined angle ⁇ , and accordingly, the substrate 60 to be cleaved is held.
  • the planned cutting line 71 of the work substrate 60 is held in a state where it is tilted from the lead straight direction P by an angle ⁇ .
  • the pump 15 connected to the holding table 11 via the pressure air conduit 14 is operated, and the pressure air of the holding table 11 is operated.
  • the substrate 60 to be processed is held in a floating state by the pressurized air G blown from the holes 12.
  • the laser irradiation unit 20 and the cooling unit are moved by the moving unit 40. 30 is moved, and the laser irradiation unit 20 and the cooling unit 30 are positioned on the planned cutting line 71 of the substrate 60 to be processed positioned by the substrate holding mechanism 10.
  • the laser irradiation unit 20 and the cooling unit 30 are previously aligned so that they are arranged at appropriate intervals along the planned cutting line 71 when positioned on the planned cutting line 71 of the substrate 60 to be covered. Adjustments have been made.
  • the laser irradiation unit 20 and the cooling unit 30 are moved along the planned cutting line 71 of the substrate 60 to be processed by the moving unit 40 with respect to the substrate 60 to be processed positioned by the substrate holding mechanism 10.
  • the workpiece 60 is moved relatively from the upper side to the lower side.
  • the laser irradiation unit 20 relatively moves along the planned cutting line 71 on the substrate to be processed 60, and the substrate to be coated 60 By irradiating the laser beam L thereon, the substrate to be processed 60 is locally heated at a predetermined temperature.
  • the laser irradiation unit 20 the laser beam L emitted from the laser oscillator 21 is condensed by the condenser lens 22 through the reflection mirror 22, and irradiated on the surface of the substrate 60 to be processed with a predetermined irradiation pattern 62. Is done.
  • the cooling unit 30 relatively moves along the planned cutting line 71 on the target substrate 60 heated locally by the laser irradiation unit 20 in this way, and the laser irradiation unit.
  • the coolant 60 is sprayed onto the substrate 60 by 20 to locally cool the substrate 60 to be processed.
  • the coolant C sprayed from the coolant conduit 32 is sprayed onto the surface of the substrate 60 to be processed with a predetermined spray pattern 63.
  • the substrate 60 is mainly heated.
  • the crack 61 is formed by the thermal stress (tensile stress) generated by the tension and the tensile stress generated by cooling the workpiece substrate 60, and the laser irradiation unit 20 and the cooling unit 30 are mounted on the substrate 60 to be coated. With the relative movement along the planned cutting line 71, the crack 61 propagates along the planned cutting line 71 from the upper side to the lower side of the substrate 60 to be processed.
  • the stress applied to the portion of the planned cutting line 71 of the substrate to be processed 60 is mainly the tensile stress (see reference numeral 72 in FIG. 6) that helps to promote the cutting process. Generation of compressive stress (see reference numeral 73 in FIG. 6) is suppressed.
  • the cutting target line 60 of the substrate to be processed 60 is predetermined from the vertical direction P by the substrate holding mechanism 10.
  • the laser irradiation unit 20 and the cooling unit 30 are relatively moved by the moving unit 40 with respect to the workpiece 60 positioned by the substrate holding mechanism 10. Since the cleaving process is performed by moving, the holding force in the normal direction applied to the workpiece substrate 60 can be minimized. Therefore, the restraining force (friction resistance, etc.) for the movement of the substrate 60 to be processed in the direction perpendicular to the planned cutting line 71 (horizontal direction) in the in-plane direction of the substrate 60 to be processed is minimized.
  • the cutting process of the substrate 60 to be covered can be performed with high quality and at high speed. Further, since the restraining force with respect to the movement of the substrate 60 to be processed in the direction (horizontal direction) perpendicular to the planned cutting line 71 in the in-plane direction of the substrate 60 is small, the surface of the substrate 60 to be processed The stress imbalance in the inward direction can be resolved to a considerable extent.
  • the pressure air G is ejected toward the workpiece substrate 60 onto the holding table 11 on which the back surface of the workpiece 60 to be cleaved is held.
  • a plurality of pressurized air holes 12 are provided, and the lower end portion of the substrate 60 to be processed is supported by the roller 16 rotatably attached to the holding table 11 by the support shaft 16a.
  • the restraint force (friction resistance, etc.) against the movement of the substrate 60 to be processed in the direction perpendicular to the cutting line 71 (horizontal direction) in the in-plane direction of the substrate 60 can be minimized, and Cleaving processing of the processed substrate 60 can be performed with higher quality and higher speed.
  • the laser irradiation unit 20 and the cooling unit 60 are moved by the moving unit 40 with respect to the substrate 60 to be positioned positioned by the substrate holding mechanism 10.
  • 30 is relatively moved from the upper side to the lower side of the processed substrate 60 along the planned cutting line 71 of the processed substrate 60.
  • the stress applied to the portion of the planned cutting line 71 is mainly the tensile stress that helps to promote the cleaving process, and the generation of compressive stress that suppresses the cleaving process is suppressed. For this reason, the cutting process of the substrate to be coated 50 can be performed with high quality and at high speed.
  • the substrate 60 to be cleaved is Unlike the configuration of the second embodiment of the present invention described later, the substrate holding mechanism 10 holds the planned cutting line 71 of the substrate 60 to be tilted by a predetermined angle ⁇ from the vertical direction P. Therefore, it is only necessary to hold the substrate 60 to be processed held by the substrate holding mechanism 10 only on the side of one side, so that the configuration of the substrate holding mechanism 10 can be relatively simplified.
  • the substrate size of the substrate 60 to be cleaved or the substrate to be processed It is preferable to determine appropriately considering other device configurations such as loader and unloader for loading and unloading 60.
  • the holding table 11 of the substrate holding mechanism 10 is provided with a means for minimizing the restraining force against the movement of the substrate 60 to be moved in the in-plane direction.
  • a force that provides a plurality of pressurized air holes 12 for ejecting the pressurized air G toward the substrate 60 to be processed is not limited to this, and a restraining force against the movement of the substrate 60 to be moved in the in-plane direction.
  • a contact structure that can be minimized may be provided. Specifically, for example, like the holding table 11 ′ of the substrate holding mechanism 10 ′ shown in FIG. 2, it is free to contact the back surface of the substrate 60 to be processed and support the contact portion of the back surface relatively movably.
  • a plurality of ball support portions 41 for accommodating the balls 42 may be provided on the surface of the holding table 11.
  • a plurality of rollers 16 rotatably attached to the holding table 11 by the support shaft 16a are used as the contact structure to the lower end portion of the substrate 60 to be processed. If the restraining force against the movement of the substrate 60 to be processed in the direction perpendicular to the cutting line 71 (horizontal direction) in the in-plane direction of the substrate 60 to be covered can be minimized Any other contact structure (a structure using a roller, a ball, a slide mechanism, etc.) can be used.
  • the contact structure to the lower end portion of the substrate 60 to be processed includes a structure in which the lower end portion of the substrate 60 to be processed is supported by point contact (multiple points) or line contact, and the entire lower end portion of the substrate 60 to be processed.
  • the structure which supports can also be taken.
  • the holding tape is attached to the substrate 60 to be covered.
  • the laser beam L is irradiated from the opposite side of the laser 11 or the coolant C is sprayed.
  • the present invention is not limited to this, and the laser beam L is applied from the holding table 11 side to the substrate 60 to be covered. Irradiation or coolant C may be applied.
  • at least the substrate 60 to be processed can be applied to the holding table 11 so that the laser beam L can be applied to the substrate 60 to be covered from the holding table 11 side or the coolant C can be sprayed. It is necessary to provide an opening (not shown) in the vicinity of the cutting schedule line 71.
  • the substrate holding mechanism that holds the substrate to be processed has a pair of holding tables that hold the substrate to be processed from both sides, and the substrate to be processed is cleaved.
  • the rest is substantially the same as the first embodiment shown in FIGS. 1A and 1B, except that the substrate to be processed is held with the planned line facing the vertical direction.
  • the same parts as those in the first embodiment shown in FIGS. 1A and 1B are denoted by the same reference numerals, and detailed description thereof is omitted.
  • the laser cleaving apparatus 1 ′ uses the substrate 60 to be processed as a substrate holding mechanism for holding the substrate 60 to be processed.
  • the substrate holding mechanism 17 having a pair of holding tables (substrate surface holding parts) 18 and 19 that also hold the side force of the surface, the substrate 60 to be processed is placed with the planned cutting line 71 of the substrate 60 being oriented in the vertical direction. keeping.
  • the holding tables 18 and 19 of the substrate holding mechanism 17 have a plurality of pressurized air holes 12 for injecting the pressure air G toward the substrate 60 to be processed, and in the in-plane direction of the substrate 60 to be processed.
  • the restraining force with respect to the movement of can be minimized.
  • the pressure air hole 12 is connected to a pump (pressure air supply mechanism) 15 for supplying pressure air via an internal communication hole 13 and a pressure air conduit 14 in the holding table 11.
  • the holding table 19 on the side where the laser irradiation unit 20 and the cooling unit 30 are arranged in the holding tables 18 and 19 of the substrate holding mechanism 17 does not hinder the movement of the laser irradiation unit 20 and the cooling unit 30. It has such a configuration. Further, the holding table 19 is irradiated with a laser beam L from the holding table 19 side or cooled on the substrate 60 to be covered. An opening 19a is provided at least in the vicinity of the planned cutting line 71 of the substrate 60 so that the agent C can be sprayed.
  • one of the holding tables 18 and 19 (here, the holding table 18) of the substrate holding mechanism 17 is provided with a plurality of rollers (lower end support portions) rotatably attached by a support shaft 16a.
  • a contact structure to the lower end portion of the substrate 60 to be processed the substrate 6 to be processed in a direction (horizontal direction) perpendicular to the planned cutting line 71 in the in-plane direction of the substrate 60 to be processed is provided.
  • a contact structure capable of minimizing the restraining force against zero movement is provided.
  • the substrate holding mechanism 17 that holds the substrate 60 to be processed holds the pair of holders that hold the substrate 60 to be processed on the side surfaces of both surfaces thereof.
  • Tables 1 and 19 are provided, and the cutting target line 71 of the processed substrate 60 is held in a state where the cutting target line 71 faces the vertical direction P.
  • the holding force in the normal direction can be made substantially zero, and the effects of the first embodiment described above can be achieved more effectively.
  • the substrate 60 is held by the substrate holding mechanism 17 with the planned cutting line 71 of the substrate to be processed 60 facing the vertical direction P.
  • the present invention is not limited to this, and the cutting target line 71 of the substrate 60 to be processed may be held with the substrate 60 in a state where the cutting line 71 is tilted from the vertical direction P by a predetermined angle.
  • the third embodiment of the present invention is the same as the first embodiment shown in FIGS. 1A and 1B, except that the configuration of the lower end support portion of the substrate holding mechanism that holds the substrate to be processed is different. Is almost the same.
  • the same parts as those in the first embodiment shown in FIGS. 1A and 1B are denoted by the same reference numerals, and detailed description thereof is omitted.
  • each lower end support unit 50 includes a roller 51 that contacts the lower end portion of the substrate to be processed 60, and a support that rotatably supports the roller 51 by a support shaft 51a.
  • the arm 52 a load sensor 53 that is attached to the lower part of the support arm 52 and detects the load applied by the substrate 60 to be processed, and the lower end support unit 50 so as to arbitrarily change the support position of the substrate 60 to be processed
  • a moving part (supporting position moving mechanism) 54 for moving the frame relative to the holding table 11.
  • a control device 45 is connected to the load sensor 53 and the moving unit 54 of each lower end support unit 50 and moves based on the detection result detected by the load sensor 53. By controlling the portion 54, the support state of the substrate 60 to be processed can be actively changed so that the contact portion with the substrate 60 to be processed becomes a desired position. Further, the control device 45 is further connected to the moving unit 40 and the laser irradiation unit 20, and based on the detection result detected by the load sensor 53 in the control device 45, the moving unit 40 and the laser irradiation unit. 20 and the cooling unit 30 can be controlled. As a result, the processing conditions such as the moving speed of the processing point by the moving unit 40, the laser output by the laser irradiation unit 20, and the cooling state by the cooling unit 30 can be actively controlled.
  • the moving part 54 of the lower end support unit 50 can also move up and down along the surface direction of the holding table 11. For this reason, each moving part 54 moves the roller 51 connected to the moving part 54 of the holding table 11 so that the load values detected by the load sensor 53 connected to the moving part 54 are the same. It can be moved up and down along the surface direction. As a result, the moving unit 54 can uniformize the stress applied to the vicinity of the planned cutting line 71 of the substrate 60 to be processed, so that the laser irradiation unit 20 and the cooling unit 30 cleave the substrate 60 with high accuracy. be able to.
  • a preheating unit for locally preheating the workpiece substrate 60 by irradiating the two beams may be further provided. Also, as a unit that moves ahead of the laser irradiation unit 20, A break lead unit for forming indentations (fine surface cracks) having a depth of several hundreds of ⁇ m to several tens of ⁇ m on the surface of the substrate 60 may be further provided. Thereby, the straightness of the crack 61 formed by the laser irradiation unit 20 and the cooling unit 30 can be further improved.
  • the laser irradiation unit 20 and the cooling unit are moved by moving the laser irradiation unit 20 and the cooling unit 30 side relative to the substrate 60 to be subjected to the movement by the moving unit 40.
  • the present invention is not limited to this, and the laser irradiation unit 20 and the processing substrate 60 are moved by moving the processing substrate 60 side (substrate holding mechanism 10 side). It may be possible to realize relative movement between the cooling unit 30 and the substrate 60 to be covered.
  • the force described by taking as an example the case where a glass substrate for a flat panel display is used as the substrate to be processed 60 is not limited to this.
  • a substrate for a solar cell panel or another functional panel substrate may be used as the processed substrate 60.
  • the fourth embodiment shown in FIGS. 7 and 8 is a work piece formed by laminating two or more glass substrates 60a, 60b made of a brittle material cover and a flat panel display or a solar battery panel!
  • the present invention relates to a laser cleaving system 90 comprising a substrate 60 and a laser cleaving apparatus 1 for cleaving the substrate 60 to be processed.
  • liquid crystal is injected between the two glass substrates 60a and 60b, and the flat panel display blank (liquid crystal display blank) 60 ′ is cut as an example. explain.
  • the laser cleaving apparatus 1 includes a holding table 11 having an opening 82 in the vicinity of the planned cutting line 71 of the liquid crystal display blank 60 ′.
  • the laser cleaving apparatus 1 is provided on the back side of the holding table 11 and irradiates a laser beam so as to pass through the opening 82 of the holding table 11, and the liquid crystal display blank.
  • 60 is provided on the front surface side of the holding table 11 and the first laser irradiation unit 20a that locally heats the planned cutting line 71 of 60a on one side (glass substrate on the back side) 60a.
  • the laser cleaving apparatus 1 includes a first moving unit 40a that holds and moves the first laser irradiation unit 20a, and a first moving unit that holds and moves the second laser irradiation unit 20b.
  • a mobile unit 40 having two mobile units 40b is provided.
  • the laser cleaving apparatus 1 is held and moved by the first moving unit 40a provided on the back surface side of the holding table 11, and heated by the first laser irradiation unit 20a.
  • the liquid crystal display blank 60 ′ is held and moved by the first cooling unit 30a for cooling the planned cutting line 71 on one surface of the liquid crystal display blank 60 ′ and the second moving unit 40b provided on the surface side of the holding table 11.
  • a cooling unit 30 having a second cooling unit 30b for cooling the planned cutting line 71 on the other surface of the liquid crystal display blank 60 ′ heated by the laser irradiation unit 20b.
  • FIGS. 1A and 1B Other configurations are substantially the same as those of the first embodiment shown in FIGS. 1A and 1B.
  • the same components as those in the first embodiment shown in FIGS. 1A and 1B are denoted by the same reference numerals, and detailed description thereof is omitted.
  • the laser cleaving apparatus 1 in the present embodiment is provided on the back side of the liquid crystal display blank 60 ′, and the first laser irradiation for heating the planned cutting line 71 of the glass substrate 60a on the back side.
  • a unit 20a and a first cooling unit 30a that is provided on the back side of the liquid crystal display blank 60 'and that cools and cleaves the cutting line 71 of the glass substrate 60a heated by the first laser irradiation unit 20a, and
  • the second laser irradiation unit 20b which is provided on the surface side of the liquid crystal display blank 60 ', and heats the planned cutting line 71 of the glass substrate 60b on the surface side, and the second laser irradiation is provided on the surface side of the liquid crystal display blank 60'.
  • a second cooling unit 30b for cooling and cleaving the planned cutting line 71 of the glass substrate 60b heated by the unit 20b. For this reason, even when the liquid crystal display blank 60 ′ formed by bonding the two glass substrates 60a and 60b is cleaved, the first laser irradiation unit 20a on the back surface side without inverting the liquid crystal display blank 60 ′. And the first cooling unit 30a, the second laser irradiation unit 20b on the front side, and the second cooling unit 30b Thus, the two glass substrates 60a and 60b can be reliably cleaved.
  • the device for inverting such a liquid crystal display blank 60 ' is about 5 m to 6 m, which is a large one. It becomes matsu.
  • the glass substrate 60a on the back surface side or the glass substrate 60b on the front surface side is cleaved and the liquid crystal display blank 60 'having reduced rigidity is inverted, it may be damaged. Force to be obtained According to the laser cleaving apparatus 1 in the present embodiment, it is not necessary to invert the liquid crystal display blank 60 ', so that the inversion does not cause the liquid crystal display blank 60 to be damaged. .
  • the first laser irradiation unit 20a held by the first moving unit 40a and the glass substrate 60a on the back surface side of the liquid crystal display blank 60 depending on the material, thickness, etc.
  • the distance from the first cooling unit 30a can be arbitrarily changed.
  • the distance between the second laser irradiation unit 20b and the second cooling unit 30b held by the second moving unit 40b is determined according to the material and thickness of the glass substrate 60b on the surface side of the liquid crystal display blank 60 ′. Can be changed arbitrarily.
  • the liquid crystal display blank 60 ' can be cleaved under the optimum conditions corresponding to the glass substrates 60a and 60b of the liquid crystal display blank 60' to be cleaved.
  • the relative position between the first laser irradiation unit 20a held by the first moving unit 40a and the second laser irradiation unit 20b held by the second moving unit 40b is arbitrarily changed. be able to. Further, the relative position between the first cooling unit 30a held by the first moving unit 40a and the second cooling unit 30b held by the second moving unit 40b can be arbitrarily changed.
  • the glass substrate 60a and 60b are appropriately matched to each other. It is possible to cleave by adjusting to the conditions. Further, as shown in FIG. 7, the first moving unit 40a holding the first laser irradiation unit 20a and the first cooling unit 30a, and the second laser irradiation unit 20b and the second cooling unit 3 Ob are held. The second moving unit 40b is connected to the control device 45 ′.
  • the relative moving speed and Z or the moving direction of the first moving unit 40a with respect to the liquid crystal display blank 60 ' are the relative moving speed and the Z or moving direction of the second moving unit 40b with respect to the liquid crystal display blank 60'.
  • it may be different from the moving direction.
  • the back side glass substrate 60a and the front side glass substrate 60b have different casing shapes, or the back side glass substrate 60a and the front side glass substrate 60b of the liquid crystal display blank 60 '. Even when the materials, thicknesses, and the like are different, they can be cleaved by appropriately adjusting the conditions according to the glass substrates 60a and 60b.
  • a detection device 80 connected to the control device 45 'and detecting the breaking status of the liquid crystal display blank 60' may be further provided.
  • each of the first laser irradiation unit 20a, the first cooling unit 30a, the second laser irradiation unit 20b, and the second cooling unit 30b is connected to the control device 45 ′. ing.
  • control is performed by connecting the first laser irradiation unit 20a, the first cooling unit 30a, the second laser irradiation unit 20b, the second cooling unit 30b, and the detection device 80 to the control device 45 '.
  • the device 45 ′ has a distance between the first laser irradiation unit 20 a and the first cooling unit 30 a held by the first moving unit 40 a according to the breaking status of the liquid crystal display blank 60 detected by the detection device 80.
  • the distance between the second laser irradiation unit 20b and the second cooling unit 30b held by the second moving unit 40b can be adjusted in real time.
  • control device 45 ' has the first laser irradiation unit 20a held by the first movement unit 40a and the second movement according to the cleaving situation of the liquid crystal display blank 60' detected by the detection device 80.
  • the relative position of the second laser irradiation unit 20b held by the unit 40b and the first cooling unit 30a held by the first moving unit 40a and the second cooling unit 30b held by the second moving unit 40b The relative position can be adjusted in real time.
  • control device 45 uses the first laser irradiation unit 20a held by the first moving unit 40a by the control device 45' in accordance with the breaking status of the liquid crystal display blank 60 'detected by the detection device 80. And the relative moving speed and Z or moving direction of the first cooling unit 30a with respect to the liquid crystal display blank 60 ', and the liquid crystal of the second laser irradiation unit 20b and the second cooling unit 30b held by the second moving unit 40b.
  • the relative moving speed and Z or moving direction relative to the display blank 60 ' can be adjusted in real time and can be changed independently.
  • the relative moving speed and Z or moving direction of the first laser irradiation unit 20a and the first cooling unit 30a held by the first moving unit 40a with respect to the liquid crystal display blank 60 ' are respectively
  • the relative moving speed and Z or moving direction of the second laser irradiation unit 20b and the second cooling unit 30b held by the second moving unit 40b with respect to the liquid crystal display blank 60 ′ may be different.
  • the control device 45 ′ determines the first laser irradiation unit 20 a, the first cooling unit 30 a, and the second laser irradiation unit 20 b according to the cleaving status of the liquid crystal display blank 60 detected by the detection device 80.
  • Each of the second cooling units 30b can be appropriately controlled in real time. For this reason, as the cleaving progresses, the distance from the cleaved portion to the sealing material to which the two glass substrates 60a and 60b are bonded changes, or the thickness of the cleaved glass substrates 60a and 60b changes. Even when the optimum cutting condition of each glass substrate 60a, 60b changes due to the above, etc., it can be cut smoothly.
  • the irradiation condition of the laser beam irradiated to the liquid crystal display blank 60 ′ from the first laser irradiation unit 20a and the second laser irradiation unit 20b is adjusted. It is free.
  • the first cooling unit 30a and the second cooling unit 30b can adjust the cooling conditions for cooling the planned cutting line 71 of the heated liquid crystal display blank 60 ′.
  • the mode in which the two glass substrates 60a and 60b of the liquid crystal display blank 60 ′ are cleaved simultaneously has been described.
  • the present invention is not limited to this.
  • the substrate 60a or the glass substrate 60b on the front side may be cleaved one by one.
  • a pressurizing mechanism (not shown) may be further provided that pressurizes and splits both sides of the planned cutting lines 71 of the glass substrates 60a and 60b of the liquid crystal display blank 60.
  • a pressurizing mechanism By providing such a pressurizing mechanism, only a part of the liquid crystal display blank 60 ′ needs to be cleaved by heating and cooling, so that the cleaving process of the liquid crystal display blank 60 ′ can be performed quickly.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Thermal Sciences (AREA)
  • Mining & Mineral Resources (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

La présente invention concerne un dispositif de découpe laser pour un matériau cassant en mesure de réaliser la découpe de haute qualité et à grande vitesse d'un substrat formé du matériau cassant à couper quelle que soit la taille du substrat à couper. Dans le dispositif de découpe laser (1), le substrat (60) est positionné sur la table de soutien (11) d'un mécanisme de soutien de substrat (10) tandis que sa partie terminale inférieure est soutenue par des rouleaux (16). La table de soutien (11) est maintenue dans un état incliné par un angle prédéterminé (θ) par rapport à une direction verticale (P) de manière à ce que le substrat (60) puisse être soutenu sur la table de soutien (11) dans un état tel qu'une ligne de découpe prévue (71) pour le substrat (60) soit inclinée par l'angle prédéterminé (θ) par rapport à la direction verticale (P). Le substrat (60) est maintenu dans un état flottant par de l'air sous pression (G) propulsé à partir des orifices d'air sous pression (12) de la table de soutien (11). Lorsqu'une unité de rayonnement laser (20) et une unité de refroidissement (30) sont déplacées, par une unité de déplacement (40), du côté supérieur au côté inférieur du substrat (60) le long de la ligne de découpe prévue (71) pour le substrat (60) par rapport au substrat (60) positionné par le mécanisme de soutien de substrat (10), une fente (61) avance du côté supérieur au côté inférieur du substrat (60) le long de la ligne de découpe prévue (71).
PCT/JP2006/318039 2005-09-28 2006-09-12 Dispositif, système et procédé de découpe laser pour un matériau cassant WO2007037118A1 (fr)

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WO2009081621A1 (fr) * 2007-12-21 2009-07-02 Mitsuboshi Diamond Industrial Co., Ltd. Appareil et procédé de traitement laser
WO2009155717A2 (fr) * 2008-06-25 2009-12-30 Schneeberger Holding Ag Dispositif de structuration d'un module solaire
WO2010088501A3 (fr) * 2009-02-02 2011-05-12 Corning Incorporated Système de manipulation de feuille de matériau et procédés de traitement
JP2011131229A (ja) * 2009-12-24 2011-07-07 Hitachi High-Technologies Corp レーザ加工方法及びレーザ加工装置並びにソーラパネル製造方法
WO2014057879A1 (fr) * 2012-10-12 2014-04-17 株式会社Ihi Dispositif de coupe
CN104091914A (zh) * 2014-03-07 2014-10-08 深圳市信宇人科技有限公司 电池极片无毛刺超速切分方法及超速切分机
JP2017145189A (ja) * 2017-03-16 2017-08-24 株式会社Ihi 割断装置

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JP2009078502A (ja) * 2007-09-27 2009-04-16 Mitsuboshi Diamond Industrial Co Ltd 脆性材料基板の割断装置および割断方法
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WO2014057879A1 (fr) * 2012-10-12 2014-04-17 株式会社Ihi Dispositif de coupe
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CN104703933A (zh) * 2012-10-12 2015-06-10 株式会社Ihi 切割装置
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CN104703933B (zh) * 2012-10-12 2017-03-15 株式会社 Ihi 切割装置
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CN104091914A (zh) * 2014-03-07 2014-10-08 深圳市信宇人科技有限公司 电池极片无毛刺超速切分方法及超速切分机
JP2017145189A (ja) * 2017-03-16 2017-08-24 株式会社Ihi 割断装置

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