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WO2009066968A2 - Procédé permettant de disposer des nanostructures et de fabriquer des nanodispositifs à l'aide de celles-ci - Google Patents

Procédé permettant de disposer des nanostructures et de fabriquer des nanodispositifs à l'aide de celles-ci Download PDF

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Publication number
WO2009066968A2
WO2009066968A2 PCT/KR2008/006927 KR2008006927W WO2009066968A2 WO 2009066968 A2 WO2009066968 A2 WO 2009066968A2 KR 2008006927 W KR2008006927 W KR 2008006927W WO 2009066968 A2 WO2009066968 A2 WO 2009066968A2
Authority
WO
WIPO (PCT)
Prior art keywords
nanostructures
sacrificial structure
substrate
forming
face
Prior art date
Application number
PCT/KR2008/006927
Other languages
English (en)
Other versions
WO2009066968A3 (fr
Inventor
Seung-Hun Hong
Byung-Yang Lee
Original Assignee
Seoul National University Industry Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seoul National University Industry Foundation filed Critical Seoul National University Industry Foundation
Priority claimed from KR1020080116785A external-priority patent/KR101027517B1/ko
Publication of WO2009066968A2 publication Critical patent/WO2009066968A2/fr
Publication of WO2009066968A3 publication Critical patent/WO2009066968A3/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/0019—Flexible or deformable structures not provided for in groups B81C1/00142 - B81C1/00182
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108

Definitions

  • the present invention relates to nano technology; and, more particularly, to a method for arranging nanostructures , such as nanotube and nanowire, and a method for fabricating a nano device employing the nanostructures.
  • nano technology A new sector of technology called nano technology is quickened as recent researches report new physical phenomena and improved material characteristics in a nanometer-size ultrafine area.
  • the so-called nano technology is an advanced scientific technology to lead the 21 st century and it is spotlighted as future technology in a wide variety of areas, such as electronic information communication, medicines and pharmaceutics, materials, manufacturing process, environment, energy and the like.
  • nanowire e.g., Si, Ge, SiO x , GeO x
  • a nanotube formed of a single element or multiple elements e.g., C, B x Ny, C x B y N z , MoS 2 , and WS 2
  • These materials are all called ⁇ nanostructures .
  • Nanostructures is a basic constituent block.
  • a piece of nanowire or nanotube has a length of less than tens to hundreds of nanometers (nm) at least in one direction.
  • These materials are known to have specific characteristics in common that draw the interests from diverse areas and processes.
  • nanostructures, such as nanotube and nanowire have wide surface area and high electrical sensitivity to an external environment in common. These characteristics make them applicable to the field of sensors .
  • carbon nanotube (CNT) and semiconductor nanowire have recognition as representative materials for the next-generation nano devices .
  • the nanostructures are required to be arranged at a specific location in a specific direction to form specific devices, e.g., a memory device or a sensor.
  • One of the methods for arranging nanostructures at a specific location on a substrate is a technology for assembling nanostructures by themselves based on the adsorption property between a molecular layer and the nanostructures.
  • the nanostructure self- assembling technology include a linker molecular patterning technology (disclosed in Nature 425, 36, 2003) which arranges carbon nanotube or nanoparticles on a solid surface by using a linker molecular layer, and an anti-adsorption molecular layer patterning technology (disclosed in Korean Patent Publication No. 10-2007- 0112733) which arranges nanowire on a solid surface by using an anti-adsorption molecular layer pattern.
  • Both of the two technologies arrange nanostructures by taking advantage of the adsorption property between a molecular layer and the nanostructures and, particularly, they arrange nanostructures horizontally to the surface of a substrate .
  • VLS Vapor-Liquid-Solid
  • An embodiment of the present invention which is devised to overcome the problem(s) of conventional technology, is directed to providing a nanostructure arrangement method that can ease the difficulty of a fabrication process, compared to conventional technology, and a method for fabricating a nano device based on the nanostructure arrangement method.
  • a method for arranging nanostructures in a certain direction including: forming a sacrificial structure having a face in the certain direction on a substrate; forming the nanostructures at least on the face of the certain direction of the sacrificial structure; and removing the sacrificial structure.
  • a method for fabricating a nano device including a first electrode and a second electrode spaced apart from each other in a vertical direction, and nanostructures arranged to connect the first and second electrodes, the method including: forming a sacrificial structure connected to a vertical face and a horizontal face on the substrate and having the horizontal face in parallel to a substrate; forming the nanostructures at least on the vertical face of the sacrificial structure; forming the first and second electrodes on the horizontal face and the substrate at both ends of the nanostructures; and removing the sacrificial structure.
  • nanostructure arrangement method of the present invention described above and the nano device fabrication method employing the same make processes easier than conventional technology by using a sacrificial structure to arrange nanostructures in a desired direction.
  • Fig. 1 is a flowchart describing a method for arranging nanostructures in accordance with an embodiment of the present invention.
  • Fig. 2 is a perspective view illustrating a method for fabricating a nano device in accordance with an embodiment of the present invention.
  • Fig. 3 is a photograph showing an exemplary nano device fabricated according to the method of Fig. 2. * Description of primary constituent elements shown in the drawings 20: substrate 21: sacrificial structure 22: nanostructure
  • Fig. 1 is a flowchart describing a method for arranging nanostructures in accordance with an embodiment of the present invention.
  • a predetermined substrate is provided.
  • the substrate include a Si substrate, an SiC> 2 substrate, a glass substrate, a metal substrate and so forth.
  • a sacrificial structure is formed on the substrate.
  • the sacrificial structure supports nanostructures, which will be formed later, to be formed in a desired direction.
  • the sacrificial structure should have at least one face in a direction that the nanostructures are to be formed.
  • the sacrificial structure should have a face perpendicular to the substrate.
  • the material used as the sacrificial structure and any material is available as long as the material can be patterned easily and readily removed during a subsequent process.
  • a metal or semiconductor material can be used for forming the sacrificial structure as well.
  • nanostructures are formed on the sacrificial structure, particularly, at least on the face of a direction that the nanostructures are to be formed.
  • the nanostructures can be arranged vertically.
  • nanotube e.g., carbon nanotube
  • nanowire e.g., semiconductor nanowire
  • the nanostructures may be arranged on the substrate by using the well-known linker molecular layer patterning method or the anti-adsorption molecular layer patterning method. This will be described in detail hereafter with reference to Fig. 2.
  • the sacrificial structure is removed.
  • the sacrificial structure can be removed by selecting a sacrificial structure removing method in consideration of the material used to form the sacrificial structure.
  • the sacrificial structure removing method may be a wet etching method where the resultant substrate is immersed in a solution capable of melting the sacrificial structure .
  • Fig. 2 is a perspective view illustrating a method for fabricating a nano device in accordance with an embodiment of the present invention.
  • the present specification describes fabrication of a nano device including a first electrode and a second electrode spaced apart from each other in a vertical direction, and nanostructures connecting the first electrode with the second electrode.
  • the nano device may be used as a sensor.
  • a substrate 20 is provided.
  • the substrate 20 may be a Si substrate, a SiO 2 substrate, a glass substrate, a metal substrate and so forth. In an embodiment of the present invention, it is assumed that the substrate is a SiO 2 substrate.
  • a sacrificial structure 21 is formed on the substrate 20.
  • the sacrificial structure 21 includes a vertical face, which is perpendicular to the substrate 20, and a horizontal face, which is disposed in parallel to the substrate 20 on top of the substrate 20 while connected to the vertical face.
  • the sacrificial structure has a shape of a rectangular hexahedron.
  • the vertical face of the sacrificial structure 21 is for subsequent formation of nanostructures, and the horizontal face is for subsequent fabrication of a second electrode.
  • the sacrificial structure 21 may be formed of a metal or semiconductor material. In the embodiment of the present invention, the sacrificial structure 21 is formed of Al.
  • nanostructures 22 are formed in a certain region (see ⁇ B' ) on the substrate 20 including the sacrificial structure 21.
  • the nanostructures 22 may be nanotube or nanowire.
  • the nanostructures 22 are formed using the well-known linker molecular layer patterning method or anti-adsorption molecular layer patterning method. The process of forming the nanostructures 22 will be described in detail hereafter. First of all, a molecular layer for discriminating a region B where the nanostructures are to be arranged among the regions on the substrate 20 with the sacrificial structure 21 from the other regions (see ⁇ A' ) are formed.
  • the molecular layer is patterned to exist in the A region.
  • a hydrophobic molecular layer e.g., octadecytrichlorosilane (OTS)
  • OTS octadecytrichlorosilane
  • the molecular layer is patterned to exist in the B region.
  • a hydrophilic molecular layer is patterned to exist in the B region.
  • the nanostructures 22 are self-assembled on the surface of the resultant substrate according to the degree of adsorption between the molecular layer and the nanostructures 22.
  • the nanostructures 22 are arranged in the B region of the substrate 20 including the sacrificial structure 21, as the nanostructures 22 are adsorbed to the surface of the B region of the substrate 20 (which is a case that a molecular layer with a low adsorption degree to the nanostructures 22 is patterned to exist in the A region), or as the nanostructures 22 are adsorbed to the molecular layer of the B region (which is a case that a molecular layer with a high adsorption degree to the nanostructures 22 is patterned to exist in the B region).
  • the nanostructures 22 are formed in a certain region (where the nanostructures 22 are to be arranged) on the resultant substrate with a sacrificial structure. However, since the nanostructures 22 are formed along the surface of the sacrificial structure 21 in the lower part, the nanostructures 22 are perpendicularly arranged relying on the vertical face of the sacrificial structure 21.
  • a first electrode 23a and a second electrode 23b are formed to expose nanostructures 22 on one side (see ⁇ C ) among the nanostructures 22 vertically arranged on a pair of vertical faces of the sacrificial structure 21 and to cover the other nanostructures 22.
  • the first electrode 23a and the second electrode 23b are formed apart from each other in a vertical direction to both ends of the nanostructures 22.
  • the method of forming the first electrode 23a and the second electrode 23b will be described in detail hereafter .
  • a photoresist pattern (not shown) exposing a region where the first electrode 23a and the second electrode 23b are to be formed is formed over the profile of the resultant structure.
  • a conductive material e.g., metal
  • metal for forming electrodes is deposited on the resultant structure including the photoresist pattern.
  • metal is deposited in a diagonal direction (see arrow mark) from a direction of a first side which is a vertical face confronting a vertical face of the sacrificial structure 21 with the nanostructures 22 (C) to be exposed by the formation of the first and second electrodes 23a and 23b between a pair of vertical phases of the sacrificial structure 21.
  • first and second electrodes 23a and 23b are to be formed, it exposes the part (C) of the nanostructures 22 vertically arranged in a second side of the sacrificial structure 21. Lastly, the photoresist pattern is removed to thereby complete the formation of the first and second electrodes 23a and 23b.
  • the sacrificial structure 21 is removed.
  • the sacrificial structure 21 is removed by immersing the resultant structure in a solution capable of dissolving the sacrificial structure
  • the sacrificial structure 21 can be dissolved by using an acid solution.
  • the resultant structure without the sacrificial structure 21 is dried.
  • CPD Critical Point Dryer
  • the method of the present invention can easily fabricate a nano device with vertically arranged nanostructures at relatively low temperature.
  • the nano device when used as a sensor, it is possible to improve the susceptibility of the sensor because the nanostructures, which is a sensing unit, is exposed in all directions of 360°.
  • the senor since the electrodes disposed at both ends of the nanostructures stretch out the nanostructures in the upper and lower parts, the sensor becomes insensitive to minor external mechanical noises, which is advantageous .
  • Fig. 3 is a photograph showing an exemplary nano device fabricated according to the method of Fig. 2. While the present invention has been described with respect to the specific embodiments, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the following claims.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)

Abstract

La présente invention a trait à un procédé permettant de disposer des nanostructures et à un procédé de fabrication d'un nanodispositif. Le procédé permettant de disposer des nanostructures dans une direction certaine comprend les étapes consistant à : former une structure sacrificielle dotée d'une surface dans la direction certaine sur un substrat ; former les nanostructures au moins sur la surface de la direction certaine de la structure sacrificielle ; et supprimer la structure sacrificielle.
PCT/KR2008/006927 2007-11-23 2008-11-24 Procédé permettant de disposer des nanostructures et de fabriquer des nanodispositifs à l'aide de celles-ci WO2009066968A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20070120021 2007-11-23
KR10-2007-0120021 2007-11-23
KR1020080116785A KR101027517B1 (ko) 2007-11-23 2008-11-24 나노 구조체의 배치 방법 및 이를 이용한 나노 소자의 제조방법
KR10-2008-0116785 2008-11-24

Publications (2)

Publication Number Publication Date
WO2009066968A2 true WO2009066968A2 (fr) 2009-05-28
WO2009066968A3 WO2009066968A3 (fr) 2009-08-20

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PCT/KR2008/006927 WO2009066968A2 (fr) 2007-11-23 2008-11-24 Procédé permettant de disposer des nanostructures et de fabriquer des nanodispositifs à l'aide de celles-ci

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Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001091441A (ja) * 1999-07-16 2001-04-06 Japan Science & Technology Corp ナノメートルオーダの機械振動子、その製造方法及びそれを用いた測定装置
GB2364933B (en) * 2000-07-18 2002-12-31 Lg Electronics Inc Method of horizontally growing carbon nanotubes
US6642129B2 (en) * 2001-07-26 2003-11-04 The Board Of Trustees Of The University Of Illinois Parallel, individually addressable probes for nanolithography

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WO2009066968A3 (fr) 2009-08-20

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