+

WO2009060625A1 - Circuit de verrouillage non volatile et circuit bascule non volatile - Google Patents

Circuit de verrouillage non volatile et circuit bascule non volatile Download PDF

Info

Publication number
WO2009060625A1
WO2009060625A1 PCT/JP2008/003236 JP2008003236W WO2009060625A1 WO 2009060625 A1 WO2009060625 A1 WO 2009060625A1 JP 2008003236 W JP2008003236 W JP 2008003236W WO 2009060625 A1 WO2009060625 A1 WO 2009060625A1
Authority
WO
WIPO (PCT)
Prior art keywords
potential
operating current
circuit
nonvolatile
latch circuit
Prior art date
Application number
PCT/JP2008/003236
Other languages
English (en)
Japanese (ja)
Inventor
Yoshikazu Katoh
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Publication of WO2009060625A1 publication Critical patent/WO2009060625A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356182—Bistable circuits using complementary field-effect transistors with additional means for controlling the main nodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a resistive RAM element, i.e. programmable resistors, e.g. formed of phase change or chalcogenide material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/037—Bistable circuits
    • H03K3/0375—Bistable circuits provided with means for increasing reliability; for protection; for ensuring a predetermined initial state when the supply voltage has been applied; for storing the actual state when the supply voltage fails
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/52—Structure characterized by the electrode material, shape, etc.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Static Random-Access Memory (AREA)

Abstract

L'invention concerne un circuit de verrouillage non volatile comportant un circuit de verrouillage (6), des bornes de sortie (8, 9) de deux inverseurs constituant le circuit de verrouillage, un premier inverseur (INV1) relié à une extrémité du passage de l'intensité de fonctionnement d'un inverseur, un second inverseur (INV2) relié à une extrémité du passage de l'intensité de fonctionnement de l'autre inverseur, une paire d'éléments de variation de résistance (1, 2), reliés en série entre un premier nœud (n13) et un deuxième nœud (n14) à un troisième nœud (n15) de façon à inverser le sens de conduction, une borne de commande de stockage (STR) reliée à une extrémité de chaque passage d'intensité de fonctionnement des premier et second inverseurs, un circuit de commutation (Trn1) possédant une borne d'E/S reliée au troisième nœud, un circuit de commande de données (15) relié à la première borne de sortie (8) et un circuit de commande de potentiel (Trp10) pour fournir l'intensité de fonctionnement à l'autre extrémité de chaque passage de l'intensité de fonctionnement de la paire d'inverseurs du circuit de verrouillage et transmettre un potentiel tout en effectuant une variation d'un premier potentiel à un second potentiel, l'autre extrémité de chaque passage d'intensité de fonctionnement des premier et second inverseurs et l'autre borne d'E/S du circuit de commutation étant reliées à une borne de transmission de potentiel pour transmettre le premier potentiel.
PCT/JP2008/003236 2007-11-08 2008-11-07 Circuit de verrouillage non volatile et circuit bascule non volatile WO2009060625A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-290892 2007-11-08
JP2007290892 2007-11-08

Publications (1)

Publication Number Publication Date
WO2009060625A1 true WO2009060625A1 (fr) 2009-05-14

Family

ID=40625532

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/003236 WO2009060625A1 (fr) 2007-11-08 2008-11-07 Circuit de verrouillage non volatile et circuit bascule non volatile

Country Status (1)

Country Link
WO (1) WO2009060625A1 (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7961005B1 (en) 2009-12-09 2011-06-14 Samsung Electronics Co., Ltd. Non-volatile logic circuits, integrated circuits including the non-volatile logic circuits, and methods of operating the integrated circuits
JP4995360B1 (ja) * 2011-01-20 2012-08-08 パナソニック株式会社 不揮発性ラッチ回路および不揮発性フリップフロップ回路
JP2013218778A (ja) * 2012-03-13 2013-10-24 Semiconductor Energy Lab Co Ltd 記憶装置及びその駆動方法
US8604827B2 (en) 2011-02-21 2013-12-10 Samsung Electronics Co., Ltd. Logic circuit, integrated circuit including the logic circuit, and method of operating the integrated circuit
US8619466B2 (en) 2011-02-07 2013-12-31 Panasonic Corporation Nonvolatile latch circuit, nonvolatile flip-flop circuit, and nonvolatile signal processing device
US8792268B2 (en) 2011-11-22 2014-07-29 Panasonic Corporation Nonvolatile latch circuit, nonvolatile flip-flop circuit, and nonvolatile signal processing device
WO2019203019A1 (fr) * 2018-04-19 2019-10-24 ソニーセミコンダクタソリューションズ株式会社 Circuit de stockage non volatil
CN117789795A (zh) * 2023-12-27 2024-03-29 无锡中微亿芯有限公司 基于可变阻值电阻的fpga用非易失性dff

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003016773A (ja) * 2001-04-27 2003-01-17 Internatl Business Mach Corp <Ibm> レジスタ、データの記憶方法及びデータの読み出し方法
WO2004040582A1 (fr) * 2002-11-01 2004-05-13 Matsushita Electric Industrial Co., Ltd. Procede permettant d'amorcer un circuit bistable non volatile a l'aide d'une element de changement de resistance
JP2005166170A (ja) * 2003-12-03 2005-06-23 Internatl Business Mach Corp <Ibm> 磁気記憶装置
JP2008085770A (ja) * 2006-09-28 2008-04-10 Toshiba Corp 不揮発ラッチ回路および不揮発性フリップフロップ回路

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003016773A (ja) * 2001-04-27 2003-01-17 Internatl Business Mach Corp <Ibm> レジスタ、データの記憶方法及びデータの読み出し方法
WO2004040582A1 (fr) * 2002-11-01 2004-05-13 Matsushita Electric Industrial Co., Ltd. Procede permettant d'amorcer un circuit bistable non volatile a l'aide d'une element de changement de resistance
JP2005166170A (ja) * 2003-12-03 2005-06-23 Internatl Business Mach Corp <Ibm> 磁気記憶装置
JP2008085770A (ja) * 2006-09-28 2008-04-10 Toshiba Corp 不揮発ラッチ回路および不揮発性フリップフロップ回路

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7961005B1 (en) 2009-12-09 2011-06-14 Samsung Electronics Co., Ltd. Non-volatile logic circuits, integrated circuits including the non-volatile logic circuits, and methods of operating the integrated circuits
JP4995360B1 (ja) * 2011-01-20 2012-08-08 パナソニック株式会社 不揮発性ラッチ回路および不揮発性フリップフロップ回路
US8437177B2 (en) 2011-01-20 2013-05-07 Panasonic Corporation Nonvolatile latch circuit and nonvolatile flip-flop circuit
US8619466B2 (en) 2011-02-07 2013-12-31 Panasonic Corporation Nonvolatile latch circuit, nonvolatile flip-flop circuit, and nonvolatile signal processing device
US8604827B2 (en) 2011-02-21 2013-12-10 Samsung Electronics Co., Ltd. Logic circuit, integrated circuit including the logic circuit, and method of operating the integrated circuit
US8792268B2 (en) 2011-11-22 2014-07-29 Panasonic Corporation Nonvolatile latch circuit, nonvolatile flip-flop circuit, and nonvolatile signal processing device
JP2013218778A (ja) * 2012-03-13 2013-10-24 Semiconductor Energy Lab Co Ltd 記憶装置及びその駆動方法
WO2019203019A1 (fr) * 2018-04-19 2019-10-24 ソニーセミコンダクタソリューションズ株式会社 Circuit de stockage non volatil
CN112020744A (zh) * 2018-04-19 2020-12-01 索尼半导体解决方案公司 非易失性存储电路
CN112020744B (zh) * 2018-04-19 2024-09-17 索尼半导体解决方案公司 非易失性存储电路
TWI863904B (zh) * 2018-04-19 2024-12-01 日商索尼半導體解決方案公司 非揮發性記憶電路
CN117789795A (zh) * 2023-12-27 2024-03-29 无锡中微亿芯有限公司 基于可变阻值电阻的fpga用非易失性dff

Similar Documents

Publication Publication Date Title
WO2009060625A1 (fr) Circuit de verrouillage non volatile et circuit bascule non volatile
CN104796132B (zh) 一种触发器电路
WO2009072511A1 (fr) Circuit de verrouillage non volatil
TW200515597A (en) Nanotube-based switching elements with multiple controls and circuits made from same
CN102122528B (zh) 将相变存储器并入cmos工艺的非易失性sram单元
US10566055B2 (en) Method for programming a bipolar resistive switching memory device
JP2006121654A5 (fr)
CN104218940B (zh) 紧凑电平位移器
Friedman et al. Complementary magnetic tunnel junction logic
CN108418576A (zh) 电平移位器
CN102832912A (zh) 一种脉冲信号单侧边沿延时的电路
CN103051307A (zh) 一种基于忆阻器的非挥发d触发器
US8797077B2 (en) Master-slave flip-flop circuit
CN105577166B (zh) 电平移位电路和电源装置
CN105450201A (zh) 抗故障触发器
JP2016514392A (ja) 不揮発性メモリベースの同期式論理回路
TWI307953B (en) A fuse circuit
TW378326B (en) An electrically programmable anti-fuse circuit
JP5261956B2 (ja) 双方向シフトレジスタ
CN105070309A (zh) 基于差分存储单元的灵敏放大器
CN105810239B (zh) 延迟电路以及采用该延迟电路的ddr系统
US20050280442A1 (en) Semiconductor integrated circuit
CN103326707B (zh) 一种兼容多种ddr的输入接收电路
JP2021068488A (ja) 不揮発性記憶回路
CN205791515U (zh) 新型dc插防反接电路

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08846515

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08846515

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载