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WO2009060625A1 - Nonvolatile latch circuit and nonvolatile flip-flop circuit - Google Patents

Nonvolatile latch circuit and nonvolatile flip-flop circuit Download PDF

Info

Publication number
WO2009060625A1
WO2009060625A1 PCT/JP2008/003236 JP2008003236W WO2009060625A1 WO 2009060625 A1 WO2009060625 A1 WO 2009060625A1 JP 2008003236 W JP2008003236 W JP 2008003236W WO 2009060625 A1 WO2009060625 A1 WO 2009060625A1
Authority
WO
WIPO (PCT)
Prior art keywords
potential
operating current
circuit
nonvolatile
latch circuit
Prior art date
Application number
PCT/JP2008/003236
Other languages
French (fr)
Japanese (ja)
Inventor
Yoshikazu Katoh
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Publication of WO2009060625A1 publication Critical patent/WO2009060625A1/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356182—Bistable circuits using complementary field-effect transistors with additional means for controlling the main nodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a resistive RAM element, i.e. programmable resistors, e.g. formed of phase change or chalcogenide material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/037—Bistable circuits
    • H03K3/0375—Bistable circuits provided with means for increasing reliability; for protection; for ensuring a predetermined initial state when the supply voltage has been applied; for storing the actual state when the supply voltage fails
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/52—Structure characterized by the electrode material, shape, etc.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Static Random-Access Memory (AREA)

Abstract

A nonvolatile latch circuit comprises a latch circuit (6), output terminals (8, 9) of two inverters constituting the latch circuit, a first inverter (INV1) connected with one end of the operating current passage of one inverter, a second inverter (INV2) connected with one end of the operating current passage of the other inverter, a pair of resistance variation elements (1, 2) connected in series between a first node (n13) and a second node (n14) through a third node (n15) such that the conduction direction is reversed, a storage control terminal (STR) connected with one end of each operating current passage of the first and second inverters, a switching circuit (Trn1) having one I/O terminal connected with the third node, a data control circuit (15) connected with the first output terminal (8), and a potential control circuit (Trp10) for supplying the operating current to the other end of each operating current passage of the pair of inverters in the latch circuit and imparting a potential while varying from a first potential to a second potential wherein the other end of each operating current passage of the first and second inverters and the other I/O terminal of the switching circuit are connected with a potential imparting terminal for imparting the first potential.
PCT/JP2008/003236 2007-11-08 2008-11-07 Nonvolatile latch circuit and nonvolatile flip-flop circuit WO2009060625A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-290892 2007-11-08
JP2007290892 2007-11-08

Publications (1)

Publication Number Publication Date
WO2009060625A1 true WO2009060625A1 (en) 2009-05-14

Family

ID=40625532

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/003236 WO2009060625A1 (en) 2007-11-08 2008-11-07 Nonvolatile latch circuit and nonvolatile flip-flop circuit

Country Status (1)

Country Link
WO (1) WO2009060625A1 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7961005B1 (en) 2009-12-09 2011-06-14 Samsung Electronics Co., Ltd. Non-volatile logic circuits, integrated circuits including the non-volatile logic circuits, and methods of operating the integrated circuits
JP4995360B1 (en) * 2011-01-20 2012-08-08 パナソニック株式会社 Nonvolatile latch circuit and nonvolatile flip-flop circuit
JP2013218778A (en) * 2012-03-13 2013-10-24 Semiconductor Energy Lab Co Ltd Memory device and driving method thereof
US8604827B2 (en) 2011-02-21 2013-12-10 Samsung Electronics Co., Ltd. Logic circuit, integrated circuit including the logic circuit, and method of operating the integrated circuit
US8619466B2 (en) 2011-02-07 2013-12-31 Panasonic Corporation Nonvolatile latch circuit, nonvolatile flip-flop circuit, and nonvolatile signal processing device
US8792268B2 (en) 2011-11-22 2014-07-29 Panasonic Corporation Nonvolatile latch circuit, nonvolatile flip-flop circuit, and nonvolatile signal processing device
WO2019203019A1 (en) * 2018-04-19 2019-10-24 ソニーセミコンダクタソリューションズ株式会社 Non-volatile storage circuit
CN117789795A (en) * 2023-12-27 2024-03-29 无锡中微亿芯有限公司 Non-volatile DFF for FPGA based on variable resistance resistor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003016773A (en) * 2001-04-27 2003-01-17 Internatl Business Mach Corp <Ibm> Register, data storing method, and data read-out method
WO2004040582A1 (en) * 2002-11-01 2004-05-13 Matsushita Electric Industrial Co., Ltd. Method for driving non-volatile flip-flop circuit using resistance change element
JP2005166170A (en) * 2003-12-03 2005-06-23 Internatl Business Mach Corp <Ibm> Magnetic storage device
JP2008085770A (en) * 2006-09-28 2008-04-10 Toshiba Corp Nonvolatile latch circuit, and nonvolatile flip-flop circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003016773A (en) * 2001-04-27 2003-01-17 Internatl Business Mach Corp <Ibm> Register, data storing method, and data read-out method
WO2004040582A1 (en) * 2002-11-01 2004-05-13 Matsushita Electric Industrial Co., Ltd. Method for driving non-volatile flip-flop circuit using resistance change element
JP2005166170A (en) * 2003-12-03 2005-06-23 Internatl Business Mach Corp <Ibm> Magnetic storage device
JP2008085770A (en) * 2006-09-28 2008-04-10 Toshiba Corp Nonvolatile latch circuit, and nonvolatile flip-flop circuit

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7961005B1 (en) 2009-12-09 2011-06-14 Samsung Electronics Co., Ltd. Non-volatile logic circuits, integrated circuits including the non-volatile logic circuits, and methods of operating the integrated circuits
JP4995360B1 (en) * 2011-01-20 2012-08-08 パナソニック株式会社 Nonvolatile latch circuit and nonvolatile flip-flop circuit
US8437177B2 (en) 2011-01-20 2013-05-07 Panasonic Corporation Nonvolatile latch circuit and nonvolatile flip-flop circuit
US8619466B2 (en) 2011-02-07 2013-12-31 Panasonic Corporation Nonvolatile latch circuit, nonvolatile flip-flop circuit, and nonvolatile signal processing device
US8604827B2 (en) 2011-02-21 2013-12-10 Samsung Electronics Co., Ltd. Logic circuit, integrated circuit including the logic circuit, and method of operating the integrated circuit
US8792268B2 (en) 2011-11-22 2014-07-29 Panasonic Corporation Nonvolatile latch circuit, nonvolatile flip-flop circuit, and nonvolatile signal processing device
JP2013218778A (en) * 2012-03-13 2013-10-24 Semiconductor Energy Lab Co Ltd Memory device and driving method thereof
WO2019203019A1 (en) * 2018-04-19 2019-10-24 ソニーセミコンダクタソリューションズ株式会社 Non-volatile storage circuit
CN112020744A (en) * 2018-04-19 2020-12-01 索尼半导体解决方案公司 Nonvolatile memory circuit
CN112020744B (en) * 2018-04-19 2024-09-17 索尼半导体解决方案公司 Non-volatile storage circuit
TWI863904B (en) * 2018-04-19 2024-12-01 日商索尼半導體解決方案公司 Non-volatile memory circuit
CN117789795A (en) * 2023-12-27 2024-03-29 无锡中微亿芯有限公司 Non-volatile DFF for FPGA based on variable resistance resistor

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