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WO2008102807A1 - Procédé et appareil de gravure, et sujet devant être traité - Google Patents

Procédé et appareil de gravure, et sujet devant être traité Download PDF

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Publication number
WO2008102807A1
WO2008102807A1 PCT/JP2008/052862 JP2008052862W WO2008102807A1 WO 2008102807 A1 WO2008102807 A1 WO 2008102807A1 JP 2008052862 W JP2008052862 W JP 2008052862W WO 2008102807 A1 WO2008102807 A1 WO 2008102807A1
Authority
WO
WIPO (PCT)
Prior art keywords
subject
processed
etching method
jetting section
silicon
Prior art date
Application number
PCT/JP2008/052862
Other languages
English (en)
Japanese (ja)
Inventor
Tomohiro Otsuka
Tetsuya Ishii
Setsuo Nakajima
Original Assignee
Sekisui Chemical Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co., Ltd. filed Critical Sekisui Chemical Co., Ltd.
Priority to CN2008800054593A priority Critical patent/CN101617393B/zh
Priority to JP2008525290A priority patent/JP4180109B2/ja
Publication of WO2008102807A1 publication Critical patent/WO2008102807A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

L'invention vise à supprimer une non-uniformité de traitement et à améliorer une uniformité de gravure de silicium. A cet effet, une tête de traitement (39) comprenant une section de pulvérisation (41) est horizontalement déplacée dans les deux sens ou dans un sens par rapport à un sujet (10) devant être traité, tout en soufflant un gaz de traitement, qui contient du fluorure d'hydrogène et de l'ozone, au sujet (10) à partir de la section de pulvérisation (41), sous une pression qui est sensiblement la pression atmosphérique, et le silicium formé sur une surface du sujet (10) est gravé. La vitesse de déplacement est réglée à une vitesse prescrite, de préférence, à 3-4/min ou plus pour avoir l'épaisseur (t) d'une couche condensée (18) formée sur la surface du sujet (10) à une valeur prescrite ou inférieure.
PCT/JP2008/052862 2007-02-23 2008-02-20 Procédé et appareil de gravure, et sujet devant être traité WO2008102807A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2008800054593A CN101617393B (zh) 2007-02-23 2008-02-20 蚀刻方法及装置
JP2008525290A JP4180109B2 (ja) 2007-02-23 2008-02-20 エッチング方法及び装置並びに被処理物

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-043574 2007-02-23
JP2007043574 2007-02-23

Publications (1)

Publication Number Publication Date
WO2008102807A1 true WO2008102807A1 (fr) 2008-08-28

Family

ID=39710081

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052862 WO2008102807A1 (fr) 2007-02-23 2008-02-20 Procédé et appareil de gravure, et sujet devant être traité

Country Status (5)

Country Link
JP (1) JP4180109B2 (fr)
KR (1) KR100944340B1 (fr)
CN (1) CN101617393B (fr)
TW (1) TWI409876B (fr)
WO (1) WO2008102807A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011141516A3 (fr) * 2010-05-11 2012-01-26 Ultra High Vaccum Solutions Ltd. T/A Nines Engineering Procédé et appareil pour contrôler la modification de texture superficielle de tranches de silicium pour des dispositifs de cellule photovoltaïque
WO2012043272A1 (fr) * 2010-09-28 2012-04-05 積水化学工業株式会社 Dispositif de transport utilisé pour le traitement de surface
JP2013077721A (ja) * 2011-09-30 2013-04-25 Sekisui Chem Co Ltd 表面粗化方法及び表面粗化装置
WO2014156681A1 (fr) * 2013-03-29 2014-10-02 東京エレクトロン株式会社 Procédé de gravure
JP2019071407A (ja) * 2017-10-10 2019-05-09 積水化学工業株式会社 表面処理方法及び装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012043383A1 (fr) * 2010-09-28 2012-04-05 積水化学工業株式会社 Procédé de gravure et dispositif
TWI396484B (zh) * 2010-11-05 2013-05-11 Zhen Ding Technology Co Ltd 蝕刻裝置及使用該蝕刻裝置蝕刻基板之方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06168922A (ja) * 1992-06-25 1994-06-14 Texas Instr Inc <Ti> シリコンの気相エッチング法
JP2003264160A (ja) * 2002-03-11 2003-09-19 Dainippon Screen Mfg Co Ltd シリコンエッチング方法およびシリコンエッチング装置
JP2004055753A (ja) * 2002-07-18 2004-02-19 Dainippon Screen Mfg Co Ltd 残渣除去方法および残渣除去装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4377090B2 (ja) 2001-07-16 2009-12-02 株式会社アライドマテリアル 炭化チタン粉末とその製造方法
TW200707511A (en) * 2005-06-23 2007-02-16 Tokyo Electron Ltd Substrate Processing method and substrate processing apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06168922A (ja) * 1992-06-25 1994-06-14 Texas Instr Inc <Ti> シリコンの気相エッチング法
JP2003264160A (ja) * 2002-03-11 2003-09-19 Dainippon Screen Mfg Co Ltd シリコンエッチング方法およびシリコンエッチング装置
JP2004055753A (ja) * 2002-07-18 2004-02-19 Dainippon Screen Mfg Co Ltd 残渣除去方法および残渣除去装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011141516A3 (fr) * 2010-05-11 2012-01-26 Ultra High Vaccum Solutions Ltd. T/A Nines Engineering Procédé et appareil pour contrôler la modification de texture superficielle de tranches de silicium pour des dispositifs de cellule photovoltaïque
US9548224B2 (en) 2010-05-11 2017-01-17 Ultra High Vacuum Solutions Ltd. Method and apparatus to control surface texture modification of silicon wafers for photovoltaic cell devices
WO2012043272A1 (fr) * 2010-09-28 2012-04-05 積水化学工業株式会社 Dispositif de transport utilisé pour le traitement de surface
JP2013077721A (ja) * 2011-09-30 2013-04-25 Sekisui Chem Co Ltd 表面粗化方法及び表面粗化装置
WO2014156681A1 (fr) * 2013-03-29 2014-10-02 東京エレクトロン株式会社 Procédé de gravure
JP2019071407A (ja) * 2017-10-10 2019-05-09 積水化学工業株式会社 表面処理方法及び装置

Also Published As

Publication number Publication date
JPWO2008102807A1 (ja) 2010-05-27
CN101617393A (zh) 2009-12-30
JP4180109B2 (ja) 2008-11-12
TWI409876B (zh) 2013-09-21
KR20090094404A (ko) 2009-09-04
TW200901310A (en) 2009-01-01
KR100944340B1 (ko) 2010-03-02
CN101617393B (zh) 2011-05-18

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