WO2008005773A3 - outil multiposte pour un traitement frontal avancé - Google Patents
outil multiposte pour un traitement frontal avancé Download PDFInfo
- Publication number
- WO2008005773A3 WO2008005773A3 PCT/US2007/072264 US2007072264W WO2008005773A3 WO 2008005773 A3 WO2008005773 A3 WO 2008005773A3 US 2007072264 W US2007072264 W US 2007072264W WO 2008005773 A3 WO2008005773 A3 WO 2008005773A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- utilized
- generally provide
- end processing
- cluster tool
- reduce
- Prior art date
Links
- 238000000034 method Methods 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 4
- 230000007547 defect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
- B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009518542A JP2009543355A (ja) | 2006-07-03 | 2007-06-27 | 進歩型フロントエンド処理のためのクラスターツール |
EP07812383A EP2041774A2 (fr) | 2006-07-03 | 2007-06-27 | Outil multiposte pour un traitement frontal avance |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US80651806P | 2006-07-03 | 2006-07-03 | |
US60/806,518 | 2006-07-03 | ||
US11/460,864 US20070134821A1 (en) | 2004-11-22 | 2006-07-28 | Cluster tool for advanced front-end processing |
US11/460,864 | 2006-07-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008005773A2 WO2008005773A2 (fr) | 2008-01-10 |
WO2008005773A3 true WO2008005773A3 (fr) | 2008-02-28 |
Family
ID=38895329
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/072264 WO2008005773A2 (fr) | 2006-07-03 | 2007-06-27 | outil multiposte pour un traitement frontal avancé |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP2041774A2 (fr) |
JP (1) | JP2009543355A (fr) |
KR (1) | KR20090035578A (fr) |
TW (1) | TW200811916A (fr) |
WO (1) | WO2008005773A2 (fr) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
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US8022372B2 (en) | 2008-02-15 | 2011-09-20 | Veeco Instruments Inc. | Apparatus and method for batch non-contact material characterization |
US7838431B2 (en) * | 2008-06-14 | 2010-11-23 | Applied Materials, Inc. | Method for surface treatment of semiconductor substrates |
US7964858B2 (en) | 2008-10-21 | 2011-06-21 | Applied Materials, Inc. | Ultraviolet reflector with coolant gas holes and method |
US20120118227A1 (en) * | 2009-08-13 | 2012-05-17 | Kim Nam Jin | Apparatus for forming layer |
US8999798B2 (en) | 2009-12-17 | 2015-04-07 | Applied Materials, Inc. | Methods for forming NMOS EPI layers |
US9076827B2 (en) * | 2010-09-14 | 2015-07-07 | Applied Materials, Inc. | Transfer chamber metrology for improved device yield |
US9653340B2 (en) | 2011-05-31 | 2017-05-16 | Veeco Instruments Inc. | Heated wafer carrier profiling |
CN104428441B (zh) * | 2012-07-02 | 2017-04-12 | 应用材料公司 | 由物理气相沉积形成的氮化铝缓冲层和活性层 |
KR102214961B1 (ko) * | 2012-08-08 | 2021-02-09 | 어플라이드 머티어리얼스, 인코포레이티드 | 링크된 진공 프로세싱 툴들 및 그 사용 방법들 |
KR101463984B1 (ko) * | 2013-02-15 | 2014-11-26 | 최대규 | 플라즈마 처리 시스템 |
US9627608B2 (en) * | 2014-09-11 | 2017-04-18 | Lam Research Corporation | Dielectric repair for emerging memory devices |
US9624578B2 (en) * | 2014-09-30 | 2017-04-18 | Lam Research Corporation | Method for RF compensation in plasma assisted atomic layer deposition |
US20160240405A1 (en) * | 2015-02-12 | 2016-08-18 | Applied Materials, Inc. | Stand alone anneal system for semiconductor wafers |
TWI677046B (zh) | 2015-04-23 | 2019-11-11 | 美商應用材料股份有限公司 | 半導體處理系統中的外部基板材旋轉 |
US10879177B2 (en) * | 2015-06-19 | 2020-12-29 | Applied Materials, Inc. | PVD deposition and anneal of multi-layer metal-dielectric film |
WO2017073396A1 (fr) * | 2015-10-28 | 2017-05-04 | 東京エレクトロン株式会社 | Procédé de traitement de substrat, appareil de traitement de substrat, système de traitement de substrat et support de stockage |
WO2017083469A1 (fr) * | 2015-11-13 | 2017-05-18 | Applied Materials, Inc. | Techniques pour remplir une structure à l'aide d'une modification sélective de surface |
US20180076065A1 (en) * | 2016-09-15 | 2018-03-15 | Applied Materials, Inc. | Integrated system for semiconductor process |
TWI700750B (zh) * | 2017-01-24 | 2020-08-01 | 美商應用材料股份有限公司 | 用於介電薄膜的選擇性沉積之方法及設備 |
JP7158133B2 (ja) * | 2017-03-03 | 2022-10-21 | アプライド マテリアルズ インコーポレイテッド | 雰囲気が制御された移送モジュール及び処理システム |
CN112575309B (zh) * | 2017-04-28 | 2023-03-07 | 应用材料公司 | 清洁制造oled使用的真空系统的方法及制造oled的方法和设备 |
US10697059B2 (en) | 2017-09-15 | 2020-06-30 | Lam Research Corporation | Thickness compensation by modulation of number of deposition cycles as a function of chamber accumulation for wafer to wafer film thickness matching |
KR102393155B1 (ko) * | 2017-09-20 | 2022-05-02 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램 |
JP7295359B2 (ja) * | 2018-03-20 | 2023-06-21 | 東京エレクトロン株式会社 | 統合的な計測を伴う基板処理ツール並びに使用方法 |
US20200006100A1 (en) * | 2018-03-20 | 2020-01-02 | Tokyo Electron Limited | Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using same |
KR102711644B1 (ko) * | 2018-03-20 | 2024-09-27 | 도쿄엘렉트론가부시키가이샤 | 통합형 반도체 공정 모듈을 포함하는 자기 인식 및 보정 이종 플랫폼, 및 이를 사용하기 위한 방법 |
KR20200142601A (ko) * | 2018-05-16 | 2020-12-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 원자 층 자기 정렬 기판 프로세싱 및 통합 툴셋 |
US20190362989A1 (en) * | 2018-05-25 | 2019-11-28 | Applied Materials, Inc. | Substrate manufacturing apparatus and methods with factory interface chamber heating |
CN111507076B (zh) * | 2019-01-29 | 2022-07-05 | 北京新唐思创教育科技有限公司 | 一种用于教学系统的共案课件制作方法、装置和终端 |
JP7206961B2 (ja) * | 2019-01-30 | 2023-01-18 | 日立金属株式会社 | 半導体製造装置の管理システム及びその方法 |
KR20220041358A (ko) * | 2020-09-25 | 2022-04-01 | 에스케이하이닉스 주식회사 | 반도체장치 및 그 제조 방법 |
WO2022186775A1 (fr) * | 2021-03-02 | 2022-09-09 | Agency For Science, Technology And Research | Chambre de préparation permettant de nettoyer et de réparer une surface de saphir pour la croissance épitaxiale de matériaux composites |
JP7478776B2 (ja) * | 2021-07-07 | 2024-05-07 | アプライド マテリアルズ インコーポレイテッド | ゲートスタック形成のための統合湿式洗浄 |
JP7485729B2 (ja) * | 2021-07-07 | 2024-05-16 | アプライド マテリアルズ インコーポレイテッド | エピタキシャル成長のための統合湿式洗浄 |
US20230032146A1 (en) * | 2021-07-27 | 2023-02-02 | Applied Materials, Inc. | Simultaneous in process metrology for cluster tool architecture |
KR102418534B1 (ko) * | 2021-10-12 | 2022-07-07 | 주식회사 바코솔루션 | 반도체 기판의 처리를 위한 클러스터 툴 및 그 제어 방법 |
KR102424853B1 (ko) * | 2021-10-12 | 2022-07-25 | 주식회사 바코솔루션 | 반도체 기판 처리 장치 |
KR102418530B1 (ko) * | 2021-10-12 | 2022-07-07 | 주식회사 바코솔루션 | 반도체 기판 처리 장치 |
CN114000192B (zh) * | 2021-10-29 | 2023-10-13 | 北京北方华创微电子装备有限公司 | 半导体工艺设备以及晶圆位置状态的监测方法 |
CN114904822B (zh) * | 2022-03-31 | 2023-09-26 | 上海果纳半导体技术有限公司 | 机械手清洗装置、清洗方法及半导体设备 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6081334A (en) * | 1998-04-17 | 2000-06-27 | Applied Materials, Inc | Endpoint detection for semiconductor processes |
US20060021702A1 (en) * | 2004-07-29 | 2006-02-02 | Ajay Kumar | Cluster tool and method for process integration in manufacture of a gate structure of a field effect transistor |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2729310B2 (ja) * | 1988-05-12 | 1998-03-18 | 三菱電機株式会社 | 半導体基板表面に薄膜を形成する装置 |
JP3107425B2 (ja) * | 1991-10-09 | 2000-11-06 | 三井化学株式会社 | 非晶質太陽電池 |
JPH05275343A (ja) * | 1992-03-27 | 1993-10-22 | Toshiba Corp | 基板処理装置 |
JP3297857B2 (ja) * | 1995-12-27 | 2002-07-02 | 東京エレクトロン株式会社 | クラスタツール装置 |
US6015759A (en) * | 1997-12-08 | 2000-01-18 | Quester Technology, Inc. | Surface modification of semiconductors using electromagnetic radiation |
JP2002270596A (ja) * | 2001-03-12 | 2002-09-20 | Matsushita Electric Ind Co Ltd | 半導体装置の製造装置 |
JP2003115578A (ja) * | 2001-10-05 | 2003-04-18 | Canon Inc | 不揮発固体磁気メモリ装置、該不揮発固体磁気メモリ装置の製造方法およびマルチ・チップ・パッケージ |
-
2007
- 2007-06-27 JP JP2009518542A patent/JP2009543355A/ja active Pending
- 2007-06-27 KR KR1020097002228A patent/KR20090035578A/ko not_active Ceased
- 2007-06-27 EP EP07812383A patent/EP2041774A2/fr not_active Withdrawn
- 2007-06-27 WO PCT/US2007/072264 patent/WO2008005773A2/fr active Application Filing
- 2007-07-03 TW TW096124192A patent/TW200811916A/zh unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6081334A (en) * | 1998-04-17 | 2000-06-27 | Applied Materials, Inc | Endpoint detection for semiconductor processes |
US20060021702A1 (en) * | 2004-07-29 | 2006-02-02 | Ajay Kumar | Cluster tool and method for process integration in manufacture of a gate structure of a field effect transistor |
Also Published As
Publication number | Publication date |
---|---|
KR20090035578A (ko) | 2009-04-09 |
TW200811916A (en) | 2008-03-01 |
WO2008005773A2 (fr) | 2008-01-10 |
JP2009543355A (ja) | 2009-12-03 |
EP2041774A2 (fr) | 2009-04-01 |
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