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WO2008153121A1 - ＺｎＯ系薄膜及びＺｎＯ系半導体素子 - Google Patents

ＺｎＯ系薄膜及びＺｎＯ系半導体素子 Download PDF

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Publication number
WO2008153121A1
WO2008153121A1 PCT/JP2008/060831 JP2008060831W WO2008153121A1 WO 2008153121 A1 WO2008153121 A1 WO 2008153121A1 JP 2008060831 W JP2008060831 W JP 2008060831W WO 2008153121 A1 WO2008153121 A1 WO 2008153121A1
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WIPO (PCT)
Prior art keywords
zno
thin film
semiconductor element
layer
based thin
Prior art date
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PCT/JP2008/060831
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English (en)
French (fr)
Inventor
Ken Nakahara
Shunsuke Akasaka
Masashi Kawasaki
Akira Ohtomo
Atsushi Tsukazaki
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Priority to US12/664,397 priority Critical patent/US8247793B2/en
Priority to EP08777192A priority patent/EP2166574A1/en
Publication of WO2008153121A1 publication Critical patent/WO2008153121A1/ja

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    • H—ELECTRICITY
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    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/024—Group 12/16 materials
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02472—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02483—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials 
    • H—ELECTRICITY
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/826—Heterojunctions comprising only Group II-VI materials heterojunctions, e.g. CdTe/HgTe heterojunctions
    • H—ELECTRICITY
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

　製造装置への負担を軽くすることができ、ドーピングの制御性や再現性が良くなり、かつ結晶構造を変化させずにｐ型伝導が得られるＺｎＯ系薄膜及びＺｎＯ系半導体素子を提供する。 　ＺｎＯ系薄膜は、ｐ型化を行うために、基本構造をＭｇＺｎＯ／ＺｎＯ超格子層３の超格子構造とし、この超格子層は、アクセプタドーピングされたＭｇＺｎＯ層３ｂとアクセプタドーピングされたＺｎＯ層３ａとの積層構造で形成されているので、ドーピングの制御性や再現性が良くなり、かつドーピング材料による結晶構造の変化を防止できる。 　
PCT/JP2008/060831 2007-06-13 2008-06-13 ＺｎＯ系薄膜及びＺｎＯ系半導体素子 WO2008153121A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/664,397 US8247793B2 (en) 2007-06-13 2008-06-13 ZnO-based thin film and ZnO-based semiconductor element
EP08777192A EP2166574A1 (en) 2007-06-13 2008-06-13 Zno-based thin film and zno-based semiconductor element

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-156160 2007-06-13
JP2007156160 2007-06-13
JP2008005975A JP2009021540A (ja) 2007-06-13 2008-01-15 ＺｎＯ系薄膜及びＺｎＯ系半導体素子
JP2008-005975 2008-01-15

Publications (1)

Publication Number Publication Date
WO2008153121A1 true WO2008153121A1 (ja) 2008-12-18

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PCT/JP2008/060831 WO2008153121A1 (ja) 2007-06-13 2008-06-13 ＺｎＯ系薄膜及びＺｎＯ系半導体素子

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Country Link
US (1) US8247793B2 (ja)
EP (1) EP2166574A1 (ja)
JP (1) JP2009021540A (ja)
TW (1) TW200908394A (ja)
WO (1) WO2008153121A1 (ja)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009065050A (ja) * 2007-09-07 2009-03-26 Rohm Co Ltd ＺｎＯ系半導体素子
JP5899519B2 (ja) * 2009-11-05 2016-04-06 パナソニックＩｐマネジメント株式会社 固体撮像装置
US20120001179A1 (en) * 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8711599B2 (en) * 2010-10-04 2014-04-29 Nutech Ventures Polarization-coupled ferroelectric unipolar junction memory and energy storage device
TWI602303B (zh) * 2011-01-26 2017-10-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP6134653B2 (ja) 2011-02-28 2017-05-24 フォノニック デバイセズ、インク ＩＩａ族及びＩＶ−ＶＩ族材料系における薄膜ヘテロ構造熱電変換
JP5800291B2 (ja) * 2011-04-13 2015-10-28 ローム株式会社 ＺｎＯ系半導体素子およびその製造方法
WO2013026035A1 (en) * 2011-08-17 2013-02-21 Ramgoss, Inc. Vertical field effect transistor on oxide semiconductor substrate and method of manufacturing the same
KR101456518B1 (ko) * 2011-10-06 2014-10-31 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 결정 및 적층체
JP6092586B2 (ja) * 2012-02-28 2017-03-08 スタンレー電気株式会社 ＺｎＯ系半導体層とその製造方法、及びＺｎＯ系半導体発光素子の製造方法
JP5952120B2 (ja) * 2012-07-27 2016-07-13 スタンレー電気株式会社 ｐ型ＺｎＯ系半導体層の製造方法、及び、ＺｎＯ系半導体素子の製造方法
JP6100590B2 (ja) * 2013-04-16 2017-03-22 スタンレー電気株式会社 ｐ型ＺｎＯ系半導体層の製造方法、ＺｎＯ系半導体素子の製造方法、及び、ｎ型ＺｎＯ系半導体積層構造
JP6116989B2 (ja) * 2013-04-22 2017-04-19 スタンレー電気株式会社 Ｃｕドープｐ型ＺｎＯ系半導体結晶層とその製造方法
JP6186981B2 (ja) * 2013-07-24 2017-08-30 パナソニック株式会社 プラズマ処理装置及び方法
US9577045B2 (en) 2014-08-04 2017-02-21 Fairchild Semiconductor Corporation Silicon carbide power bipolar devices with deep acceptor doping
WO2017216682A1 (ja) * 2016-06-17 2017-12-21 株式会社半導体エネルギー研究所 スパッタリング装置およびトランジスタ
CN108226233B (zh) * 2018-01-08 2020-01-31 中国工程物理研究院化工材料研究所 分级结构ZnO@ZnO纳米复合气敏材料及其制备方法
US11387330B2 (en) 2018-03-12 2022-07-12 Semiconductor Energy Laboratory Co., Ltd. Metal oxide and transistor including metal oxide
CN119153363A (zh) 2018-06-07 2024-12-17 斯兰纳Uv科技有限公司 用于形成半导体层的方法和材料沉积系统
KR102250011B1 (ko) * 2018-10-18 2021-05-10 한양대학교 산학협력단 막 구조체, 소자 및 멀티레벨 소자
CN110600539A (zh) * 2019-09-02 2019-12-20 广东美的制冷设备有限公司 高电子迁移率晶体管及其应用
CN112071949B (zh) * 2020-08-04 2022-10-11 深圳大学 紫外探测器及其制备方法
WO2022030114A1 (ja) * 2020-08-06 2022-02-10 信越化学工業株式会社 半導体積層体、半導体素子および半導体素子の製造方法
CN114639596A (zh) * 2020-09-22 2022-06-17 南方科技大学 一种本征宽禁带半导体的制备方法及应用

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001287998A (ja) * 2000-04-05 2001-10-16 Stanley Electric Co Ltd ＺｎＯ結晶、その成長方法および光半導体装置
JP2004221132A (ja) * 2003-01-09 2004-08-05 Sharp Corp 酸化物半導体発光素子
JP2004247465A (ja) * 2003-02-13 2004-09-02 Sharp Corp 酸化物半導体発光素子
JP2004349600A (ja) * 2003-05-26 2004-12-09 Sharp Corp 酸化物半導体発光素子およびその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6057561A (en) * 1997-03-07 2000-05-02 Japan Science And Technology Corporation Optical semiconductor element
US7132691B1 (en) * 1998-09-10 2006-11-07 Rohm Co., Ltd. Semiconductor light-emitting device and method for manufacturing the same
JP2004095634A (ja) * 2002-08-29 2004-03-25 Sharp Corp 酸化物半導体発光素子およびその製造方法
US7821019B2 (en) * 2004-10-04 2010-10-26 Svt Associates, Inc. Triple heterostructure incorporating a strained zinc oxide layer for emitting light at high temperatures
WO2007015330A1 (ja) * 2005-08-03 2007-02-08 Stanley Electric Co., Ltd. 半導体発光素子及びその製造方法
JP4988179B2 (ja) * 2005-09-22 2012-08-01 ローム株式会社 酸化亜鉛系化合物半導体素子
JP2007173404A (ja) * 2005-12-20 2007-07-05 Rohm Co Ltd 酸化物半導体発光素子
JP2009212139A (ja) * 2008-02-29 2009-09-17 Rohm Co Ltd ＺｎＯ系半導体素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001287998A (ja) * 2000-04-05 2001-10-16 Stanley Electric Co Ltd ＺｎＯ結晶、その成長方法および光半導体装置
JP2004221132A (ja) * 2003-01-09 2004-08-05 Sharp Corp 酸化物半導体発光素子
JP2004247465A (ja) * 2003-02-13 2004-09-02 Sharp Corp 酸化物半導体発光素子
JP2004349600A (ja) * 2003-05-26 2004-12-09 Sharp Corp 酸化物半導体発光素子およびその製造方法

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TW200908394A (en) 2009-02-16
EP2166574A1 (en) 2010-03-24
US8247793B2 (en) 2012-08-21
US20100289004A1 (en) 2010-11-18
JP2009021540A (ja) 2009-01-29

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