WO2008146625A1 - 反射防止膜形成用組成物、及びこれを用いたレジストパターン形成方法 - Google Patents
反射防止膜形成用組成物、及びこれを用いたレジストパターン形成方法 Download PDFInfo
- Publication number
- WO2008146625A1 WO2008146625A1 PCT/JP2008/059045 JP2008059045W WO2008146625A1 WO 2008146625 A1 WO2008146625 A1 WO 2008146625A1 JP 2008059045 W JP2008059045 W JP 2008059045W WO 2008146625 A1 WO2008146625 A1 WO 2008146625A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- composition
- antireflection film
- formation
- resist pattern
- film formation
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/451,747 US8455182B2 (en) | 2007-06-01 | 2008-05-16 | Composition for antireflection film formation and method for resist pattern formation using the composition |
CN200880015585A CN101681113A (zh) | 2007-06-01 | 2008-05-16 | 防反射膜形成用组合物、以及使用该组合物的光刻胶图案形成方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-147410 | 2007-06-01 | ||
JP2007147410A JP4917969B2 (ja) | 2007-06-01 | 2007-06-01 | 反射防止膜形成用組成物、及びこれを用いたレジストパターン形成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008146625A1 true WO2008146625A1 (ja) | 2008-12-04 |
Family
ID=40074890
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/059045 WO2008146625A1 (ja) | 2007-06-01 | 2008-05-16 | 反射防止膜形成用組成物、及びこれを用いたレジストパターン形成方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8455182B2 (ja) |
JP (1) | JP4917969B2 (ja) |
CN (1) | CN101681113A (ja) |
TW (1) | TW200916968A (ja) |
WO (1) | WO2008146625A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI753721B (zh) * | 2016-04-14 | 2022-01-21 | 日商旭化成股份有限公司 | 感光性樹脂組合物及硬化浮凸圖案之製造方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5902529B2 (ja) * | 2012-03-28 | 2016-04-13 | 株式会社ディスコ | レーザ加工方法 |
KR102165728B1 (ko) * | 2014-07-24 | 2020-10-14 | 닛산 가가쿠 가부시키가이샤 | 칼라필터 하층막 형성용 수지 조성물 |
CN114035405B (zh) * | 2022-01-07 | 2022-04-22 | 甘肃华隆芯材料科技有限公司 | 制备顶部抗反射膜的组合物、顶部抗反射膜和含氟组合物 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005257826A (ja) * | 2004-03-10 | 2005-09-22 | Tokai Kogaku Kk | 光触媒性光学体 |
JP2006056139A (ja) * | 2004-08-20 | 2006-03-02 | Konica Minolta Medical & Graphic Inc | インクシート及び画像形成方法 |
WO2007043556A1 (ja) * | 2005-10-14 | 2007-04-19 | Tokyo Ohka Kogyo Co., Ltd. | ホトレジスト上層膜形成用材料 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4910122A (en) * | 1982-09-30 | 1990-03-20 | Brewer Science, Inc. | Anti-reflective coating |
JP2616091B2 (ja) | 1990-01-29 | 1997-06-04 | 日本電気株式会社 | 半導体装置の製造方法 |
JP2599638B2 (ja) | 1990-06-22 | 1997-04-09 | 大日精化工業株式会社 | 微粒子複合酸化物ブルーグリーン顔料及びその製造方法 |
US5750017A (en) | 1996-08-21 | 1998-05-12 | Lucent Technologies Inc. | Tin electroplating process |
JP2005103893A (ja) | 2003-09-30 | 2005-04-21 | Konica Minolta Medical & Graphic Inc | 画像形成材料及び画像形成方法 |
JP4609878B2 (ja) * | 2003-10-28 | 2011-01-12 | 東京応化工業株式会社 | レジスト上層膜形成材料、およびこれを用いたレジストパターン形成方法 |
US7314691B2 (en) * | 2004-04-08 | 2008-01-01 | Samsung Electronics Co., Ltd. | Mask pattern for semiconductor device fabrication, method of forming the same, method for preparing coating composition for fine pattern formation, and method of fabricating semiconductor device |
TWI403843B (zh) * | 2005-09-13 | 2013-08-01 | Fujifilm Corp | 正型光阻組成物及使用它之圖案形成方法 |
EP1767993B1 (en) * | 2005-09-26 | 2008-12-24 | FUJIFILM Corporation | Positive photosensitive composition and pattern forming method using the same |
US8188159B2 (en) | 2005-10-13 | 2012-05-29 | Hewlett-Packard Development Company, L.P. | Environmentally friendly additives for inkjet inks |
EP1806621A1 (en) * | 2006-01-08 | 2007-07-11 | Rohm and Haas Electronic Materials LLC | Coating compositions for photoresists |
TWI358613B (en) * | 2006-03-10 | 2012-02-21 | Rohm & Haas Elect Mat | Compositions and processes for photolithography |
JP5324290B2 (ja) * | 2008-04-03 | 2013-10-23 | 東京応化工業株式会社 | 反射防止膜形成材料、およびこれを用いたレジストパターン形成方法 |
-
2007
- 2007-06-01 JP JP2007147410A patent/JP4917969B2/ja active Active
-
2008
- 2008-05-16 US US12/451,747 patent/US8455182B2/en active Active
- 2008-05-16 WO PCT/JP2008/059045 patent/WO2008146625A1/ja active Application Filing
- 2008-05-16 CN CN200880015585A patent/CN101681113A/zh active Pending
- 2008-05-28 TW TW097119774A patent/TW200916968A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005257826A (ja) * | 2004-03-10 | 2005-09-22 | Tokai Kogaku Kk | 光触媒性光学体 |
JP2006056139A (ja) * | 2004-08-20 | 2006-03-02 | Konica Minolta Medical & Graphic Inc | インクシート及び画像形成方法 |
WO2007043556A1 (ja) * | 2005-10-14 | 2007-04-19 | Tokyo Ohka Kogyo Co., Ltd. | ホトレジスト上層膜形成用材料 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI753721B (zh) * | 2016-04-14 | 2022-01-21 | 日商旭化成股份有限公司 | 感光性樹脂組合物及硬化浮凸圖案之製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI374338B (ja) | 2012-10-11 |
CN101681113A (zh) | 2010-03-24 |
US20100104987A1 (en) | 2010-04-29 |
TW200916968A (en) | 2009-04-16 |
US8455182B2 (en) | 2013-06-04 |
JP4917969B2 (ja) | 2012-04-18 |
JP2008299222A (ja) | 2008-12-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2009022224A3 (en) | Antireflective coating composition | |
WO2008053305A3 (en) | Additives and methods for reducing hexavalent chromium in cement | |
WO2008079814A3 (en) | Mapk/erk kinase inhibitors | |
WO2008115890A3 (en) | Mapk/erk kinase inhibitors | |
WO2010060581A3 (de) | Herbizid-safener-kombination | |
WO2007077560A3 (en) | Cryoprotective compositions and methods of using same | |
WO2010053270A3 (ko) | 강판 표면처리용 수지 조성물 및 이를 이용한 표면처리 강판 | |
WO2008021291A3 (en) | Fluorinated polymers for use in immersion lithography | |
WO2012013361A3 (en) | A polymeric substrate having a glass-like surface and a chip made of said polymeric substrate | |
WO2008090554A3 (en) | Modified conductive surfaces prepared by electrografting of diazonium salts | |
WO2008034814A3 (en) | Benzoxazine-containing formulations polymerizable/curable at low temperature | |
WO2006105127A3 (en) | Hydroxysteroid dehydrogenase inhibitors | |
WO2008055236A3 (en) | Mapk/erk kinase inhibitors | |
WO2010003133A3 (en) | Cdk modulators | |
MX2009010142A (es) | Composiciones y metodos para tratar un pozo de agua bloqueado. | |
BRPI0718222A2 (pt) | processo para preparar compostos, e, composto. | |
WO2010064895A3 (en) | Decorative film and method for manufacturing the same | |
PL2111559T3 (pl) | Powlekająca kompozycja antyrefleksyjna i powłoka antyrefleksyjna wytwarzana z jej zastosowaniem | |
MY161746A (en) | Composition for forming low-refractive-index film, method of forming low-refractive-index film, and low-refractive-index film and antireflective film both formed by the formation method | |
WO2008111636A1 (ja) | シリカ多孔質体、光学用途積層体及び組成物、並びに、シリカ多孔質体の製造方法 | |
WO2010003567A3 (de) | Fluortenside | |
WO2008097337A3 (en) | Methods and apparatus for multiple part missile | |
WO2008140553A3 (en) | Mapk/erk kinase inhibitors | |
WO2010041242A3 (en) | Oxidized thiophospholipid compounds and uses thereof | |
WO2008146625A1 (ja) | 反射防止膜形成用組成物、及びこれを用いたレジストパターン形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200880015585.7 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08752880 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 12451747 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 08752880 Country of ref document: EP Kind code of ref document: A1 |