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WO2008146610A1 - 磁性体記憶装置 - Google Patents

磁性体記憶装置 Download PDF

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Publication number
WO2008146610A1
WO2008146610A1 PCT/JP2008/058924 JP2008058924W WO2008146610A1 WO 2008146610 A1 WO2008146610 A1 WO 2008146610A1 JP 2008058924 W JP2008058924 W JP 2008058924W WO 2008146610 A1 WO2008146610 A1 WO 2008146610A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic body
storage device
magnetic
length
magnetic storage
Prior art date
Application number
PCT/JP2008/058924
Other languages
English (en)
French (fr)
Inventor
Yuukou Katou
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to US12/602,234 priority Critical patent/US8599605B2/en
Priority to JP2009516246A priority patent/JPWO2008146610A1/ja
Publication of WO2008146610A1 publication Critical patent/WO2008146610A1/ja

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)

Abstract

磁性体記憶装置は、第１の磁性体と非磁性体と第２の磁性体とが積層された積層構造体と、第１の磁性体側及び第２の磁性体側のいずれかの側に設けられた第３の磁性体とを具備する。第１の磁性体と第２の磁性体との磁化方向の相違で積層構造体の抵抗が変化する。第３の磁性体の第１の磁性体への射影が第１の磁性体と少なくとも一部で重なり合う。第１の磁性体と第３の磁性体とは磁気的に結合する。第１の磁性体の平面形状が第１の方向に長い形状である。第１の方向で、第３の磁性体の長さは、第１の磁性体の長さより短い。第１の磁性体の平面形状の長軸方向の長さを短軸方向の長さで割ったアスペクト比は、第３の磁性体のアスペクト比より大きい。
PCT/JP2008/058924 2007-05-28 2008-05-15 磁性体記憶装置 WO2008146610A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/602,234 US8599605B2 (en) 2007-05-28 2008-05-15 Magnetic storage device
JP2009516246A JPWO2008146610A1 (ja) 2007-05-28 2008-05-15 磁性体記憶装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-140176 2007-05-28
JP2007140176 2007-05-28

Publications (1)

Publication Number Publication Date
WO2008146610A1 true WO2008146610A1 (ja) 2008-12-04

Family

ID=40074876

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058924 WO2008146610A1 (ja) 2007-05-28 2008-05-15 磁性体記憶装置

Country Status (3)

Country Link
US (1) US8599605B2 (ja)
JP (1) JPWO2008146610A1 (ja)
WO (1) WO2008146610A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140070342A1 (en) * 2012-09-13 2014-03-13 Micron Technology, Inc. Methods of forming memory cells and arrays of magnetic memory cell structures, and related memory cells and memory cell structures
WO2020137119A1 (ja) * 2018-12-27 2020-07-02 昭和電工株式会社 磁気センサおよび磁気センサの製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332527A (ja) * 2005-05-30 2006-12-07 Renesas Technology Corp 磁気記憶素子
US9147410B2 (en) * 2013-09-16 2015-09-29 Seagate Technology Llc Reader structure with canted pinning
US9305576B2 (en) * 2014-09-09 2016-04-05 Kabushiki Kaisha Toshiba Magnetoresistive element

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JP2001284550A (ja) * 2000-01-27 2001-10-12 Hewlett Packard Co <Hp> センス層における磁化の混乱を防ぐ構造要素を有する磁気メモリ
JP2005150303A (ja) * 2003-11-13 2005-06-09 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP2005327988A (ja) * 2004-05-17 2005-11-24 Toshiba Corp 磁気ランダムアクセスメモリ及びその磁気ランダムアクセスメモリのデータ書き込み方法

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JP2001267522A (ja) 2000-03-23 2001-09-28 Sharp Corp 磁気メモリ素子及び磁気メモリ
EP1187103A3 (en) * 2000-08-04 2003-01-08 Matsushita Electric Industrial Co., Ltd. Magnetoresistance effect device, head, and memory element
JP2002076472A (ja) * 2000-08-31 2002-03-15 Alps Electric Co Ltd スピンバルブ型薄膜磁気素子およびこのスピンバルブ型薄膜磁気素子を備えた薄膜磁気ヘッド
JP2002084019A (ja) 2000-09-08 2002-03-22 Canon Inc 磁気デバイス及び固体磁気メモリ
JP2002334971A (ja) * 2001-05-09 2002-11-22 Nec Corp 磁性メモリ及びその動作方法
JP3769241B2 (ja) * 2002-03-29 2006-04-19 株式会社東芝 磁気抵抗効果素子及び磁気メモリ
JP4596230B2 (ja) * 2002-09-13 2010-12-08 Ｔｄｋ株式会社 磁気メモリデバイスおよびその製造方法
JP4371781B2 (ja) 2002-11-26 2009-11-25 株式会社東芝 磁気セル及び磁気メモリ
US7184301B2 (en) * 2002-11-27 2007-02-27 Nec Corporation Magnetic memory cell and magnetic random access memory using the same
WO2004093087A1 (en) * 2003-04-16 2004-10-28 Agency For Science, Technology And Research Magnetic memory device
JP3961496B2 (ja) 2003-04-18 2007-08-22 アルプス電気株式会社 Ｃｐｐ型巨大磁気抵抗効果ヘッド
JP3824600B2 (ja) * 2003-07-30 2006-09-20 株式会社東芝 磁気抵抗効果素子および磁気メモリ
JP4665382B2 (ja) 2003-09-08 2011-04-06 ソニー株式会社 磁気メモリ
JP2005101441A (ja) * 2003-09-26 2005-04-14 Anelva Corp 磁気抵抗多層膜
WO2005098953A1 (ja) 2004-03-31 2005-10-20 Nec Corporation 磁化方向制御方法、及びそれを応用したｍｒａｍ
JP4868198B2 (ja) 2004-08-19 2012-02-01 日本電気株式会社 磁性メモリ
JP2006073861A (ja) 2004-09-03 2006-03-16 Renesas Technology Corp 磁気記憶装置
JP2006165265A (ja) 2004-12-07 2006-06-22 Sony Corp 記憶素子及びメモリ
JP4877575B2 (ja) 2005-05-19 2012-02-15 日本電気株式会社 磁気ランダムアクセスメモリ
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JP4762004B2 (ja) * 2006-02-28 2011-08-31 三洋電機株式会社 固体電解コンデンサの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001284550A (ja) * 2000-01-27 2001-10-12 Hewlett Packard Co <Hp> センス層における磁化の混乱を防ぐ構造要素を有する磁気メモリ
JP2005150303A (ja) * 2003-11-13 2005-06-09 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP2005327988A (ja) * 2004-05-17 2005-11-24 Toshiba Corp 磁気ランダムアクセスメモリ及びその磁気ランダムアクセスメモリのデータ書き込み方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140070342A1 (en) * 2012-09-13 2014-03-13 Micron Technology, Inc. Methods of forming memory cells and arrays of magnetic memory cell structures, and related memory cells and memory cell structures
JP2015532013A (ja) * 2012-09-13 2015-11-05 マイクロン テクノロジー， インク． メモリセルおよび磁気メモリセル構造のアレイの形成方法、ならびに関連するメモリセルおよびメモリセル構造
US9373775B2 (en) 2012-09-13 2016-06-21 Micron Technology, Inc. Methods of forming magnetic memory cells
US10164168B2 (en) 2012-09-13 2018-12-25 Micron Technology, Inc. Magnetic memory cell structures, arrays, and semiconductor devices
WO2020137119A1 (ja) * 2018-12-27 2020-07-02 昭和電工株式会社 磁気センサおよび磁気センサの製造方法
JP2020106401A (ja) * 2018-12-27 2020-07-09 昭和電工株式会社 磁気センサおよび磁気センサの製造方法
JP7203598B2 (ja) 2018-12-27 2023-01-13 昭和電工株式会社 磁気センサおよび磁気センサの製造方法
US11977135B2 (en) 2018-12-27 2024-05-07 Resonac Corporation Magnetic sensor and magnetic sensor manufacturing method

Also Published As

Publication number Publication date
US8599605B2 (en) 2013-12-03
JPWO2008146610A1 (ja) 2010-08-19
US20100173173A1 (en) 2010-07-08

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