WO2009060749A1 - 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ - Google Patents
磁気抵抗効果素子、及び磁気ランダムアクセスメモリ Download PDFInfo
- Publication number
- WO2009060749A1 WO2009060749A1 PCT/JP2008/069498 JP2008069498W WO2009060749A1 WO 2009060749 A1 WO2009060749 A1 WO 2009060749A1 JP 2008069498 W JP2008069498 W JP 2008069498W WO 2009060749 A1 WO2009060749 A1 WO 2009060749A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- free magnetization
- free
- region
- magnetization
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1655—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1657—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009540021A JP5382348B2 (ja) | 2007-11-05 | 2008-10-28 | 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ |
US12/739,990 US8174086B2 (en) | 2007-11-05 | 2008-10-28 | Magnetoresistive element, and magnetic random access memory |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-287901 | 2007-11-05 | ||
JP2007287901 | 2007-11-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009060749A1 true WO2009060749A1 (ja) | 2009-05-14 |
Family
ID=40625643
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/069498 WO2009060749A1 (ja) | 2007-11-05 | 2008-10-28 | 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ |
Country Status (3)
Country | Link |
---|---|
US (1) | US8174086B2 (ja) |
JP (1) | JP5382348B2 (ja) |
WO (1) | WO2009060749A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011029616A (ja) * | 2009-07-23 | 2011-02-10 | Samsung Electronics Co Ltd | 磁区壁を利用した発振器及びその動作方法 |
WO2011118395A1 (ja) * | 2010-03-23 | 2011-09-29 | 日本電気株式会社 | 磁気メモリ素子、磁気メモリ、及びその製造方法 |
JP2014143302A (ja) * | 2013-01-24 | 2014-08-07 | Nec Corp | 磁気メモリセル及び磁気ランダムアクセスメモリ |
JP2015060609A (ja) * | 2013-09-18 | 2015-03-30 | 株式会社東芝 | 磁気記憶装置及びその駆動方法 |
JP2016197754A (ja) * | 2011-05-20 | 2016-11-24 | 国立大学法人東北大学 | 磁気メモリ素子および磁気メモリ |
JP2019079959A (ja) * | 2017-10-25 | 2019-05-23 | Tdk株式会社 | 磁壁移動型磁気記録装置及び磁気記録アレイ |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2010095589A1 (ja) * | 2009-02-17 | 2012-08-23 | 日本電気株式会社 | 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ |
KR101766899B1 (ko) | 2010-04-21 | 2017-08-10 | 삼성전자주식회사 | 자기 메모리 소자 |
TW201308343A (zh) | 2011-08-02 | 2013-02-16 | Ind Tech Res Inst | 磁性移位暫存器的讀取器 |
GB201117446D0 (en) * | 2011-10-10 | 2011-11-23 | Univ York | Method of pinning domain walls in a nanowire magnetic memory device |
US9576636B1 (en) * | 2015-04-03 | 2017-02-21 | Everspin Technologies, Inc. | Magnetic memory having ROM-like storage and method therefore |
JP6496036B2 (ja) * | 2015-04-27 | 2019-04-03 | 東芝メモリ株式会社 | 磁気メモリ装置 |
CN109643690B (zh) * | 2017-04-14 | 2023-08-29 | Tdk株式会社 | 磁壁利用型模拟存储元件、磁壁利用型模拟存储器、非易失性逻辑电路及磁神经元件 |
CN115101284B (zh) * | 2022-08-25 | 2022-12-20 | 季华实验室 | 一种磁性多层膜及其制备方法和应用 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006073930A (ja) * | 2004-09-06 | 2006-03-16 | Canon Inc | 磁壁移動を利用した磁気抵抗効果素子の磁化状態の変化方法及び該方法を用いた磁気メモリ素子、固体磁気メモリ |
WO2007020823A1 (ja) * | 2005-08-15 | 2007-02-22 | Nec Corporation | 磁気メモリセル、磁気ランダムアクセスメモリ、及び磁気ランダムアクセスメモリへのデータ読み書き方法 |
WO2007119748A1 (ja) * | 2006-04-11 | 2007-10-25 | Nec Corporation | 磁気ランダムアクセスメモリ及びその製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4143020B2 (ja) | 2003-11-13 | 2008-09-03 | 株式会社東芝 | 磁気抵抗効果素子および磁気メモリ |
US7282755B2 (en) * | 2003-11-14 | 2007-10-16 | Grandis, Inc. | Stress assisted current driven switching for magnetic memory applications |
JP4413603B2 (ja) | 2003-12-24 | 2010-02-10 | 株式会社東芝 | 磁気記憶装置及び磁気情報の書込み方法 |
JP4932275B2 (ja) | 2005-02-23 | 2012-05-16 | 株式会社日立製作所 | 磁気抵抗効果素子 |
US7446984B2 (en) * | 2005-12-14 | 2008-11-04 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic random access memory (MRAM) having increased reference layer anisotropy through ion beam etch of magnetic layers |
-
2008
- 2008-10-28 WO PCT/JP2008/069498 patent/WO2009060749A1/ja active Application Filing
- 2008-10-28 US US12/739,990 patent/US8174086B2/en active Active
- 2008-10-28 JP JP2009540021A patent/JP5382348B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006073930A (ja) * | 2004-09-06 | 2006-03-16 | Canon Inc | 磁壁移動を利用した磁気抵抗効果素子の磁化状態の変化方法及び該方法を用いた磁気メモリ素子、固体磁気メモリ |
WO2007020823A1 (ja) * | 2005-08-15 | 2007-02-22 | Nec Corporation | 磁気メモリセル、磁気ランダムアクセスメモリ、及び磁気ランダムアクセスメモリへのデータ読み書き方法 |
WO2007119748A1 (ja) * | 2006-04-11 | 2007-10-25 | Nec Corporation | 磁気ランダムアクセスメモリ及びその製造方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011029616A (ja) * | 2009-07-23 | 2011-02-10 | Samsung Electronics Co Ltd | 磁区壁を利用した発振器及びその動作方法 |
WO2011118395A1 (ja) * | 2010-03-23 | 2011-09-29 | 日本電気株式会社 | 磁気メモリ素子、磁気メモリ、及びその製造方法 |
US8884388B2 (en) | 2010-03-23 | 2014-11-11 | Nec Corporation | Magnetic memory element, magnetic memory and manufacturing method of magnetic memory |
JP5652472B2 (ja) * | 2010-03-23 | 2015-01-14 | 日本電気株式会社 | 磁気メモリ素子、磁気メモリ、及びその製造方法 |
JP2016197754A (ja) * | 2011-05-20 | 2016-11-24 | 国立大学法人東北大学 | 磁気メモリ素子および磁気メモリ |
US9799822B2 (en) | 2011-05-20 | 2017-10-24 | Nec Corporation | Magnetic memory element and magnetic memory |
JP2014143302A (ja) * | 2013-01-24 | 2014-08-07 | Nec Corp | 磁気メモリセル及び磁気ランダムアクセスメモリ |
JP2015060609A (ja) * | 2013-09-18 | 2015-03-30 | 株式会社東芝 | 磁気記憶装置及びその駆動方法 |
JP2019079959A (ja) * | 2017-10-25 | 2019-05-23 | Tdk株式会社 | 磁壁移動型磁気記録装置及び磁気記録アレイ |
Also Published As
Publication number | Publication date |
---|---|
US8174086B2 (en) | 2012-05-08 |
JPWO2009060749A1 (ja) | 2011-03-24 |
US20100237449A1 (en) | 2010-09-23 |
JP5382348B2 (ja) | 2014-01-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2009060749A1 (ja) | 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ | |
WO2009054180A1 (ja) | 磁気抵抗効果素子及び磁気ランダムアクセスメモリ | |
SG153012A1 (en) | Magnetic element with thermally-assisted writing | |
WO2009001706A1 (ja) | 磁気抵抗効果素子、および磁気ランダムアクセスメモリ | |
WO2008099626A1 (ja) | 磁気抵抗効果素子、および磁気ランダムアクセスメモリ | |
WO2009019949A1 (ja) | 磁気ランダムアクセスメモリ及びその製造方法 | |
WO2009019947A1 (ja) | 磁壁ランダムアクセスメモリ | |
JP2016197754A5 (ja) | ||
US7876595B2 (en) | Magnetic shift register as counter and data storage device | |
JP2001237472A5 (ja) | ||
WO2008050045A3 (fr) | Dispositif magnetique a aimantation perpendiculaire et a couche intercalaire compensatrice d'interactions | |
JP2012533189A5 (ja) | ||
JP2004348952A5 (ja) | ||
WO2007035786A3 (en) | Magnetic devices having stabilized free ferromagnetic layer or multilayered free ferromagnetic layer | |
TW200626922A (en) | Magnetic sensor using giant magnetoresistive elements and method for manufacturing the same | |
WO2008120482A1 (ja) | 磁気ランダムアクセスメモリ | |
WO2005082061A3 (en) | Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization | |
WO2009057504A1 (ja) | 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ、及びその初期化方法 | |
TW200629272A (en) | Magnetic memory and its manufacturing method | |
JP2012099816A5 (ja) | ||
TW200744083A (en) | Magnetic recording medium and magnetic storage unit | |
AU2003225795A8 (en) | Synthetic-ferrimagnet sense-layer for high density mram applications | |
WO2009037910A1 (ja) | 磁気ランダムアクセスメモリ、その書き込み方法、及び磁気抵抗効果素子 | |
WO2008105095A8 (ja) | 垂直磁気記録媒体および磁気記録装置 | |
WO2008126136A1 (ja) | 磁気ヘッド |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08847160 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2009540021 Country of ref document: JP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 12739990 Country of ref document: US |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 08847160 Country of ref document: EP Kind code of ref document: A1 |