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WO2009060749A1 - 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ - Google Patents

磁気抵抗効果素子、及び磁気ランダムアクセスメモリ Download PDF

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Publication number
WO2009060749A1
WO2009060749A1 PCT/JP2008/069498 JP2008069498W WO2009060749A1 WO 2009060749 A1 WO2009060749 A1 WO 2009060749A1 JP 2008069498 W JP2008069498 W JP 2008069498W WO 2009060749 A1 WO2009060749 A1 WO 2009060749A1
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WO
WIPO (PCT)
Prior art keywords
layer
free magnetization
free
region
magnetization
Prior art date
Application number
PCT/JP2008/069498
Other languages
English (en)
French (fr)
Inventor
Shunsuke Fukami
Nobuyuki Ishiwata
Tetsuhiro Suzuki
Kiyokazu Nagahara
Norikazu Ohshima
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009540021A priority Critical patent/JP5382348B2/ja
Priority to US12/739,990 priority patent/US8174086B2/en
Publication of WO2009060749A1 publication Critical patent/WO2009060749A1/ja

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)

Abstract

　磁気抵抗効果素子が、第１磁化自由層と、第２磁化自由層と、第２磁化自由層に隣接して設けられる非磁性層と、非磁性層に隣接して第２磁化自由層とは反対側に設けられる第１磁化固定層とを具備する。第１磁化自由層は、強磁性体から構成され、且つ、膜厚方向の磁気異方性を有する。一方、第２磁化自由層及び第１磁化固定層は、強磁性体から構成され、面内方向の磁気異方性を有する。第１磁化自由層は、第１磁化固定領域と第２磁化固定領域と第１磁化固定領域と第２磁化固定領域とに接続された磁化自由領域とを有する。磁化自由領域と第２磁化自由層とは、磁気的に結合されている。加えて、磁化自由領域の重心と第２磁化自由層の重心とが面内方向である特定方向にずれて位置している。
PCT/JP2008/069498 2007-11-05 2008-10-28 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ WO2009060749A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009540021A JP5382348B2 (ja) 2007-11-05 2008-10-28 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ
US12/739,990 US8174086B2 (en) 2007-11-05 2008-10-28 Magnetoresistive element, and magnetic random access memory

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-287901 2007-11-05
JP2007287901 2007-11-05

Publications (1)

Publication Number Publication Date
WO2009060749A1 true WO2009060749A1 (ja) 2009-05-14

Family

ID=40625643

Family Applications (1)

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PCT/JP2008/069498 WO2009060749A1 (ja) 2007-11-05 2008-10-28 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ

Country Status (3)

Country Link
US (1) US8174086B2 (ja)
JP (1) JP5382348B2 (ja)
WO (1) WO2009060749A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011029616A (ja) * 2009-07-23 2011-02-10 Samsung Electronics Co Ltd 磁区壁を利用した発振器及びその動作方法
WO2011118395A1 (ja) * 2010-03-23 2011-09-29 日本電気株式会社 磁気メモリ素子、磁気メモリ、及びその製造方法
JP2014143302A (ja) * 2013-01-24 2014-08-07 Nec Corp 磁気メモリセル及び磁気ランダムアクセスメモリ
JP2015060609A (ja) * 2013-09-18 2015-03-30 株式会社東芝 磁気記憶装置及びその駆動方法
JP2016197754A (ja) * 2011-05-20 2016-11-24 国立大学法人東北大学 磁気メモリ素子および磁気メモリ
JP2019079959A (ja) * 2017-10-25 2019-05-23 Tdk株式会社 磁壁移動型磁気記録装置及び磁気記録アレイ

Families Citing this family (8)

* Cited by examiner, † Cited by third party
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JPWO2010095589A1 (ja) * 2009-02-17 2012-08-23 日本電気株式会社 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ
KR101766899B1 (ko) 2010-04-21 2017-08-10 삼성전자주식회사 자기 메모리 소자
TW201308343A (zh) 2011-08-02 2013-02-16 Ind Tech Res Inst 磁性移位暫存器的讀取器
GB201117446D0 (en) * 2011-10-10 2011-11-23 Univ York Method of pinning domain walls in a nanowire magnetic memory device
US9576636B1 (en) * 2015-04-03 2017-02-21 Everspin Technologies, Inc. Magnetic memory having ROM-like storage and method therefore
JP6496036B2 (ja) * 2015-04-27 2019-04-03 東芝メモリ株式会社 磁気メモリ装置
CN109643690B (zh) * 2017-04-14 2023-08-29 Tdk株式会社 磁壁利用型模拟存储元件、磁壁利用型模拟存储器、非易失性逻辑电路及磁神经元件
CN115101284B (zh) * 2022-08-25 2022-12-20 季华实验室 一种磁性多层膜及其制备方法和应用

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JP2006073930A (ja) * 2004-09-06 2006-03-16 Canon Inc 磁壁移動を利用した磁気抵抗効果素子の磁化状態の変化方法及び該方法を用いた磁気メモリ素子、固体磁気メモリ
WO2007020823A1 (ja) * 2005-08-15 2007-02-22 Nec Corporation 磁気メモリセル、磁気ランダムアクセスメモリ、及び磁気ランダムアクセスメモリへのデータ読み書き方法
WO2007119748A1 (ja) * 2006-04-11 2007-10-25 Nec Corporation 磁気ランダムアクセスメモリ及びその製造方法

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JP4143020B2 (ja) 2003-11-13 2008-09-03 株式会社東芝 磁気抵抗効果素子および磁気メモリ
US7282755B2 (en) * 2003-11-14 2007-10-16 Grandis, Inc. Stress assisted current driven switching for magnetic memory applications
JP4413603B2 (ja) 2003-12-24 2010-02-10 株式会社東芝 磁気記憶装置及び磁気情報の書込み方法
JP4932275B2 (ja) 2005-02-23 2012-05-16 株式会社日立製作所 磁気抵抗効果素子
US7446984B2 (en) * 2005-12-14 2008-11-04 Hitachi Global Storage Technologies Netherlands B.V. Magnetic random access memory (MRAM) having increased reference layer anisotropy through ion beam etch of magnetic layers

Patent Citations (3)

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JP2006073930A (ja) * 2004-09-06 2006-03-16 Canon Inc 磁壁移動を利用した磁気抵抗効果素子の磁化状態の変化方法及び該方法を用いた磁気メモリ素子、固体磁気メモリ
WO2007020823A1 (ja) * 2005-08-15 2007-02-22 Nec Corporation 磁気メモリセル、磁気ランダムアクセスメモリ、及び磁気ランダムアクセスメモリへのデータ読み書き方法
WO2007119748A1 (ja) * 2006-04-11 2007-10-25 Nec Corporation 磁気ランダムアクセスメモリ及びその製造方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011029616A (ja) * 2009-07-23 2011-02-10 Samsung Electronics Co Ltd 磁区壁を利用した発振器及びその動作方法
WO2011118395A1 (ja) * 2010-03-23 2011-09-29 日本電気株式会社 磁気メモリ素子、磁気メモリ、及びその製造方法
US8884388B2 (en) 2010-03-23 2014-11-11 Nec Corporation Magnetic memory element, magnetic memory and manufacturing method of magnetic memory
JP5652472B2 (ja) * 2010-03-23 2015-01-14 日本電気株式会社 磁気メモリ素子、磁気メモリ、及びその製造方法
JP2016197754A (ja) * 2011-05-20 2016-11-24 国立大学法人東北大学 磁気メモリ素子および磁気メモリ
US9799822B2 (en) 2011-05-20 2017-10-24 Nec Corporation Magnetic memory element and magnetic memory
JP2014143302A (ja) * 2013-01-24 2014-08-07 Nec Corp 磁気メモリセル及び磁気ランダムアクセスメモリ
JP2015060609A (ja) * 2013-09-18 2015-03-30 株式会社東芝 磁気記憶装置及びその駆動方法
JP2019079959A (ja) * 2017-10-25 2019-05-23 Tdk株式会社 磁壁移動型磁気記録装置及び磁気記録アレイ

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Publication number Publication date
US8174086B2 (en) 2012-05-08
JPWO2009060749A1 (ja) 2011-03-24
US20100237449A1 (en) 2010-09-23
JP5382348B2 (ja) 2014-01-08

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