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WO2008140083A1 - Solution révélatrice de photorésist - Google Patents

Solution révélatrice de photorésist Download PDF

Info

Publication number
WO2008140083A1
WO2008140083A1 PCT/JP2008/058774 JP2008058774W WO2008140083A1 WO 2008140083 A1 WO2008140083 A1 WO 2008140083A1 JP 2008058774 W JP2008058774 W JP 2008058774W WO 2008140083 A1 WO2008140083 A1 WO 2008140083A1
Authority
WO
WIPO (PCT)
Prior art keywords
developing solution
mass
hydrogen atom
photoresist developing
integer
Prior art date
Application number
PCT/JP2008/058774
Other languages
English (en)
Japanese (ja)
Inventor
Seiji Tono
Yasutaka Natsuka
Original Assignee
Tokuyama Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corporation filed Critical Tokuyama Corporation
Priority to KR1020097020596A priority Critical patent/KR101084454B1/ko
Priority to CN2008800123729A priority patent/CN101657761B/zh
Publication of WO2008140083A1 publication Critical patent/WO2008140083A1/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D317/00—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms
    • C07D317/08—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3
    • C07D317/72—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 spiro-condensed with carbocyclic rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

Le problème à résoudre dans le cadre de la présente invention consiste à proposer une solution révélatrice qui peut être utilisée de façon appropriée pour la révélation d'un résist épais comprenant un résist chimiquement amplifié. A cet effet, on propose une solution révélatrice de photorésist qui comprend une solution aqueuse de composé d'ammonium quaternaire contenant un agent tensioactif anionique et un agent tensioactif cationique, l'agent tensioactif anionique étant représenté par la formule (1) et étant contenu en une quantité variant de 0,1 à 5 % en masse et l'agent tensioactif cationique étant contenu en une quantité variant de 0,01 à 2 % en masse par rapport à 100 % en masse de la masse totale de la solution révélatrice de photorésist. (1) dans laquelle R1 représente un atome d'hydrogène ou un groupe méthyle ; R2 représente un atome d'hydrogène ou un groupe alkyle ayant de 1 à 4 atomes de carbone ; A représente un groupe alkylène ayant de 1 à 4 atomes de carbone, à condition que les AO puissent être identiques entre eux ou puissent être une combinaison de deux ou plusieurs groupes différents dans la molécule ; p est un entier allant de 1 à 3 ; m est un entier allant de 5 à 30 ; et M représente un atome d'hydrogène ou un ion ammonium.
PCT/JP2008/058774 2007-05-16 2008-05-13 Solution révélatrice de photorésist WO2008140083A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020097020596A KR101084454B1 (ko) 2007-05-16 2008-05-13 포토레지스트 현상액
CN2008800123729A CN101657761B (zh) 2007-05-16 2008-05-13 光刻胶显影液

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007130157 2007-05-16
JP2007-130157 2007-05-16

Publications (1)

Publication Number Publication Date
WO2008140083A1 true WO2008140083A1 (fr) 2008-11-20

Family

ID=40002273

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058774 WO2008140083A1 (fr) 2007-05-16 2008-05-13 Solution révélatrice de photorésist

Country Status (5)

Country Link
JP (1) JP5052410B2 (fr)
KR (1) KR101084454B1 (fr)
CN (1) CN101657761B (fr)
TW (1) TWI401544B (fr)
WO (1) WO2008140083A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101750908B (zh) * 2008-12-10 2012-01-11 明德国际仓储贸易(上海)有限公司 显影液组成物
WO2012127342A1 (fr) * 2011-03-18 2012-09-27 Basf Se Procédé permettant de fabriquer des dispositifs à circuit intégré, des dispositifs optiques, des micromachines et des dispositifs à précision mécanique qui présentent des couches de matériau structurées ayant des dimensions d'espacement des lignes égales ou inférieures à 50 nm
WO2018105299A1 (fr) * 2016-12-08 2018-06-14 富士電機株式会社 Procédé de fabrication de dispositif à semiconducteur
US10867798B2 (en) 2016-12-08 2020-12-15 Fuji Electric Co., Ltd. Method of manufacturing semiconductor device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI377451B (en) * 2008-12-08 2012-11-21 Everlight Chem Ind Corp Developer composition
CN101825848B (zh) * 2010-04-19 2011-11-23 张万诚 一种印刷用热敏阳图型感光版的显影液及其制备方法
KR101993360B1 (ko) 2012-08-08 2019-06-26 삼성전자주식회사 포토 리소그래피용 린스액
CN102929109A (zh) * 2012-11-15 2013-02-13 杭州格林达化学有限公司 一种负性光刻胶显影液及其应用
JP5728517B2 (ja) * 2013-04-02 2015-06-03 富士フイルム株式会社 化学増幅型レジスト膜のパターニング用有機系処理液の製造方法、パターン形成方法、及び、電子デバイスの製造方法
CN105589304B (zh) * 2016-03-04 2020-08-14 苏州晶瑞化学股份有限公司 一种光刻胶用显影液及其制备方法和应用
WO2017169834A1 (fr) * 2016-03-31 2017-10-05 富士フイルム株式会社 Liquide de traitement pour production de semi-conducteurs et procédé de formation de motif
CN111965958A (zh) * 2020-09-07 2020-11-20 苏州理硕科技有限公司 一种干膜光刻胶用显影液及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5149982A (en) * 1974-10-24 1976-04-30 Sumitomo Chemical Co Senryono kochakuho
WO2000035863A1 (fr) * 1998-12-14 2000-06-22 Syngenta Participations Ag Preparations pesticides contenant des agents de surface d'amines alcoxylees neutralises d'ester d'hemisulfate de tristyrylphenol alcoxyle
JP2001228630A (ja) * 2000-02-16 2001-08-24 Fuji Photo Film Co Ltd 感光性樹脂現像用現像液、画像形成方法、カラーフィルタの製造方法、カラーフィルタ付アクティブマトリックス基板の製造方法、及び液晶表示素子
JP2004117981A (ja) * 2002-09-27 2004-04-15 Fuji Photo Film Co Ltd 感光性平版印刷版用現像液
JP2004184648A (ja) * 2002-12-03 2004-07-02 Clariant (Japan) Kk リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002169299A (ja) * 2000-09-21 2002-06-14 Tokuyama Corp フォトレジスト現像液
TWI229245B (en) * 2002-02-27 2005-03-11 Chi Mei Corp A developer solution composition and process using the same
US20040002019A1 (en) * 2002-06-24 2004-01-01 Fuji Photo Film Co., Ltd. Method for Preparing Lithographic Printing Plate
JP4040539B2 (ja) * 2003-06-13 2008-01-30 東京応化工業株式会社 レジスト用現像液組成物およびレジストパターンの形成方法
TWI391793B (zh) * 2005-06-13 2013-04-01 Tokuyama Corp 光阻顯影液、及使用該顯影液之基板的製造方法
US8034529B2 (en) * 2005-08-30 2011-10-11 Hitachi Chemical Company, Ltd. Photosensitive resin composition and photosensitive element

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5149982A (en) * 1974-10-24 1976-04-30 Sumitomo Chemical Co Senryono kochakuho
WO2000035863A1 (fr) * 1998-12-14 2000-06-22 Syngenta Participations Ag Preparations pesticides contenant des agents de surface d'amines alcoxylees neutralises d'ester d'hemisulfate de tristyrylphenol alcoxyle
JP2001228630A (ja) * 2000-02-16 2001-08-24 Fuji Photo Film Co Ltd 感光性樹脂現像用現像液、画像形成方法、カラーフィルタの製造方法、カラーフィルタ付アクティブマトリックス基板の製造方法、及び液晶表示素子
JP2004117981A (ja) * 2002-09-27 2004-04-15 Fuji Photo Film Co Ltd 感光性平版印刷版用現像液
JP2004184648A (ja) * 2002-12-03 2004-07-02 Clariant (Japan) Kk リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101750908B (zh) * 2008-12-10 2012-01-11 明德国际仓储贸易(上海)有限公司 显影液组成物
WO2012127342A1 (fr) * 2011-03-18 2012-09-27 Basf Se Procédé permettant de fabriquer des dispositifs à circuit intégré, des dispositifs optiques, des micromachines et des dispositifs à précision mécanique qui présentent des couches de matériau structurées ayant des dimensions d'espacement des lignes égales ou inférieures à 50 nm
US9184057B2 (en) 2011-03-18 2015-11-10 Basf Se Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less
WO2018105299A1 (fr) * 2016-12-08 2018-06-14 富士電機株式会社 Procédé de fabrication de dispositif à semiconducteur
JPWO2018105299A1 (ja) * 2016-12-08 2019-04-04 富士電機株式会社 半導体装置の製造方法
US10629441B2 (en) 2016-12-08 2020-04-21 Fuji Electric Co., Ltd. Method of manufacturing semiconductor device
US10867798B2 (en) 2016-12-08 2020-12-15 Fuji Electric Co., Ltd. Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
CN101657761A (zh) 2010-02-24
JP2008310315A (ja) 2008-12-25
TW200915020A (en) 2009-04-01
KR20100014740A (ko) 2010-02-10
JP5052410B2 (ja) 2012-10-17
KR101084454B1 (ko) 2011-11-21
TWI401544B (zh) 2013-07-11
CN101657761B (zh) 2012-07-04

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