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WO2008140083A1 - Photoresist developing solution - Google Patents

Photoresist developing solution Download PDF

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Publication number
WO2008140083A1
WO2008140083A1 PCT/JP2008/058774 JP2008058774W WO2008140083A1 WO 2008140083 A1 WO2008140083 A1 WO 2008140083A1 JP 2008058774 W JP2008058774 W JP 2008058774W WO 2008140083 A1 WO2008140083 A1 WO 2008140083A1
Authority
WO
WIPO (PCT)
Prior art keywords
developing solution
mass
hydrogen atom
photoresist developing
integer
Prior art date
Application number
PCT/JP2008/058774
Other languages
French (fr)
Japanese (ja)
Inventor
Seiji Tono
Yasutaka Natsuka
Original Assignee
Tokuyama Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corporation filed Critical Tokuyama Corporation
Priority to KR1020097020596A priority Critical patent/KR101084454B1/en
Priority to CN2008800123729A priority patent/CN101657761B/en
Publication of WO2008140083A1 publication Critical patent/WO2008140083A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D317/00—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms
    • C07D317/08—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3
    • C07D317/72—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 spiro-condensed with carbocyclic rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

[PROBLEMS] To provide a developing solution which can be used suitably for the development of a thick resist comprising a chemically amplified resist. [MEANS FOR SOLVING PROBLEMS] Disclosed is a photoresist developing solution comprising an aqueous quaternary ammonium compound solution containing an anionic surfactant and a cationic surfactant, wherein the anionic surfactant is represented by the formula (1) and is contained in an amount of 0.1 to 5% by mass and the cationic surfactant is contained in an amount of 0.01 to 2% by mass relative to 100% by mass of the total mass of the photoresist developing solution. (1) wherein R1 represents a hydrogen atom or a methyl group; R2 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; A represents an alkylene group having 1 to 4 carbon atoms, provided that AO's may be the same as each other or may be a combination of different two or more groups in the molecule; p is an integer of 1 to 3; m is an integer of 5 to 30; and M represents a hydrogen atom or an ammonium ion.
PCT/JP2008/058774 2007-05-16 2008-05-13 Photoresist developing solution WO2008140083A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020097020596A KR101084454B1 (en) 2007-05-16 2008-05-13 Photoresist developer
CN2008800123729A CN101657761B (en) 2007-05-16 2008-05-13 Photoresist developing solution

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007130157 2007-05-16
JP2007-130157 2007-05-16

Publications (1)

Publication Number Publication Date
WO2008140083A1 true WO2008140083A1 (en) 2008-11-20

Family

ID=40002273

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058774 WO2008140083A1 (en) 2007-05-16 2008-05-13 Photoresist developing solution

Country Status (5)

Country Link
JP (1) JP5052410B2 (en)
KR (1) KR101084454B1 (en)
CN (1) CN101657761B (en)
TW (1) TWI401544B (en)
WO (1) WO2008140083A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101750908B (en) * 2008-12-10 2012-01-11 明德国际仓储贸易(上海)有限公司 Developer solution component
WO2012127342A1 (en) * 2011-03-18 2012-09-27 Basf Se Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less
WO2018105299A1 (en) * 2016-12-08 2018-06-14 富士電機株式会社 Semiconductor device manufacturing method
US10867798B2 (en) 2016-12-08 2020-12-15 Fuji Electric Co., Ltd. Method of manufacturing semiconductor device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI377451B (en) * 2008-12-08 2012-11-21 Everlight Chem Ind Corp Developer composition
CN101825848B (en) * 2010-04-19 2011-11-23 张万诚 Developing solution of thermosensitive positive-type photosensitive plate for printing and preparation method thereof
KR101993360B1 (en) 2012-08-08 2019-06-26 삼성전자주식회사 Phto lithographic rinse solution
CN102929109A (en) * 2012-11-15 2013-02-13 杭州格林达化学有限公司 Negative photoresist developing solution and application thereof
JP5728517B2 (en) * 2013-04-02 2015-06-03 富士フイルム株式会社 Method for producing organic processing liquid for patterning chemically amplified resist film, pattern forming method, and method for producing electronic device
CN105589304B (en) * 2016-03-04 2020-08-14 苏州晶瑞化学股份有限公司 Developing solution for photoresist and preparation method and application thereof
WO2017169834A1 (en) * 2016-03-31 2017-10-05 富士フイルム株式会社 Treatment liquid for semiconductor production and pattern formation method
CN111965958A (en) * 2020-09-07 2020-11-20 苏州理硕科技有限公司 Developing solution for dry film photoresist and preparation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5149982A (en) * 1974-10-24 1976-04-30 Sumitomo Chemical Co Senryono kochakuho
WO2000035863A1 (en) * 1998-12-14 2000-06-22 Syngenta Participations Ag Pesticide formulations containing alkoxylated tristyrylphenol hemi-sulfate ester neutralized alkoxylated amine surfactants
JP2001228630A (en) * 2000-02-16 2001-08-24 Fuji Photo Film Co Ltd Developing solution for developing photosensitive resin, image forming method, method for producing color filter, method for producing active matrix substrate with color filter and liquid crystal display
JP2004117981A (en) * 2002-09-27 2004-04-15 Fuji Photo Film Co Ltd Developing solution for photosensitive planographic printing plate
JP2004184648A (en) * 2002-12-03 2004-07-02 Clariant (Japan) Kk Rinse liquid for lithography, and method for resist pattern formation using same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002169299A (en) * 2000-09-21 2002-06-14 Tokuyama Corp Photoresist developer
TWI229245B (en) * 2002-02-27 2005-03-11 Chi Mei Corp A developer solution composition and process using the same
US20040002019A1 (en) * 2002-06-24 2004-01-01 Fuji Photo Film Co., Ltd. Method for Preparing Lithographic Printing Plate
JP4040539B2 (en) * 2003-06-13 2008-01-30 東京応化工業株式会社 Developer composition for resist and method for forming resist pattern
TWI391793B (en) * 2005-06-13 2013-04-01 Tokuyama Corp Developing fluid and manufacturing method of base plate patterned with same
US8034529B2 (en) * 2005-08-30 2011-10-11 Hitachi Chemical Company, Ltd. Photosensitive resin composition and photosensitive element

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5149982A (en) * 1974-10-24 1976-04-30 Sumitomo Chemical Co Senryono kochakuho
WO2000035863A1 (en) * 1998-12-14 2000-06-22 Syngenta Participations Ag Pesticide formulations containing alkoxylated tristyrylphenol hemi-sulfate ester neutralized alkoxylated amine surfactants
JP2001228630A (en) * 2000-02-16 2001-08-24 Fuji Photo Film Co Ltd Developing solution for developing photosensitive resin, image forming method, method for producing color filter, method for producing active matrix substrate with color filter and liquid crystal display
JP2004117981A (en) * 2002-09-27 2004-04-15 Fuji Photo Film Co Ltd Developing solution for photosensitive planographic printing plate
JP2004184648A (en) * 2002-12-03 2004-07-02 Clariant (Japan) Kk Rinse liquid for lithography, and method for resist pattern formation using same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101750908B (en) * 2008-12-10 2012-01-11 明德国际仓储贸易(上海)有限公司 Developer solution component
WO2012127342A1 (en) * 2011-03-18 2012-09-27 Basf Se Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less
US9184057B2 (en) 2011-03-18 2015-11-10 Basf Se Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less
WO2018105299A1 (en) * 2016-12-08 2018-06-14 富士電機株式会社 Semiconductor device manufacturing method
JPWO2018105299A1 (en) * 2016-12-08 2019-04-04 富士電機株式会社 Semiconductor device manufacturing method
US10629441B2 (en) 2016-12-08 2020-04-21 Fuji Electric Co., Ltd. Method of manufacturing semiconductor device
US10867798B2 (en) 2016-12-08 2020-12-15 Fuji Electric Co., Ltd. Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
CN101657761A (en) 2010-02-24
JP2008310315A (en) 2008-12-25
TW200915020A (en) 2009-04-01
KR20100014740A (en) 2010-02-10
JP5052410B2 (en) 2012-10-17
KR101084454B1 (en) 2011-11-21
TWI401544B (en) 2013-07-11
CN101657761B (en) 2012-07-04

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