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WO2008035617A1 - FILM MINCE D'ALLIAGE Ag ET CIBLE DE PULVÉRISATION D'ALLIAGE Ag POUR LA FORMATION DU FILM MINCE D'ALLIAGE Ag - Google Patents

FILM MINCE D'ALLIAGE Ag ET CIBLE DE PULVÉRISATION D'ALLIAGE Ag POUR LA FORMATION DU FILM MINCE D'ALLIAGE Ag Download PDF

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Publication number
WO2008035617A1
WO2008035617A1 PCT/JP2007/067847 JP2007067847W WO2008035617A1 WO 2008035617 A1 WO2008035617 A1 WO 2008035617A1 JP 2007067847 W JP2007067847 W JP 2007067847W WO 2008035617 A1 WO2008035617 A1 WO 2008035617A1
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WO
WIPO (PCT)
Prior art keywords
thin film
alloy
alloy thin
sulfidation
resistance
Prior art date
Application number
PCT/JP2007/067847
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English (en)
Japanese (ja)
Inventor
Toshiki Sato
Takao Kawanaka
Jun Suzuki
Katsutoshi Takagi
Original Assignee
Kabushiki Kaisha Kobe Seiko Sho
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kabushiki Kaisha Kobe Seiko Sho filed Critical Kabushiki Kaisha Kobe Seiko Sho
Publication of WO2008035617A1 publication Critical patent/WO2008035617A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
    • C03C17/09—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0808—Mirrors having a single reflecting layer

Definitions

  • the present invention belongs to a technical field related to an Ag alloy thin film and an Ag alloy sputtering target for forming the Ag alloy thin film, and in particular, an Ag alloy for a reflective film such as a lighting fixture, an automobile headlamp, and a rear lamp.
  • the present invention belongs to a technical field relating to a thin film (Ag alloy reflective film) and an Ag alloy sputtering target for forming the Ag alloy reflective film.
  • A1 As a reflection film for lighting fixtures, a headlight for automobiles, and a reflection lamp for rear lamps, a film in which A1 having a film thickness of about lOOnm is formed on a resin substrate by sputtering is mainly used.
  • A1 is easily corroded by acids and alkalis with poor corrosion resistance and its reflectivity is lowered.
  • a protective coating such as resin is applied on the reflective film of A1. Coats are a factor in increasing costs.
  • Ag has an initial reflectivity of around 97%, which is about 10% higher than the initial reflectivity of A1 of 88%.
  • the Ag thin film was agglomerated when halogen ions and moisture were present in the environment, and the reflectivity decreased due to agglomeration.
  • innumerable white spots and discoloration occur on the surface of the Ag thin film, which causes a problem of deteriorating design and commercial properties.
  • Japanese Patent Laid-Open No. 55-85646 discloses an alloy characterized in that Ag contains a total of 10 to 60 wt% of Pd, Pt, and Au among Pd, Pt, and Au.
  • Japanese Patent No. 47251 discloses an alloy film structure excellent in sulfidation resistance in which Au or an Au alloy is formed in a thickness of 10 to 200 nm on the surface of an Ag-Sn alloy layer.
  • Patent Document 1 Japanese Patent Laid-Open No. 2001-226765
  • Patent Document 2 Japanese Patent Laid-Open No. 2005-15893
  • Patent Document 3 Japanese Patent Laid-Open No. 55-85646
  • Patent Document 4 JP-A-5-47251
  • Patent Document 5 JP-A-2005-48231
  • the present invention has been made paying attention to such a situation, and the purpose thereof is the initial reflectance.
  • the aim is to provide an Ag alloy thin film with an Al content of 88% or more, comparable to that of Al, and excellent in aggregation resistance and sulfidation resistance, and an Ag alloy sputtering target for forming this Ag alloy thin film.
  • the present invention thus completed and capable of achieving the above object relates to an Ag alloy thin film and an Ag alloy sputtering target for forming this Ag alloy reflective film, and claims in the scope of patent claims.
  • the Ag alloy reflective film according to Item 1 (Ag alloy reflective film according to the present invention) and the Ag alloy sputtering target according to Claim 2, which are configured as follows.
  • the Ag alloy thin film according to claim 1 is an Ag alloy thin film containing two or more of Au, Au, Bi, and Sn, and satisfies the following formulas (1) to (3):
  • [Bi] is the Bi content (atomic%)
  • [Au] is the Au content (atomic%)
  • [Sn] is the Sn content (atomic%). It is shown.
  • An Ag alloy sputtering target according to claim 2 is an Ag alloy sputtering target for forming an Ag alloy thin film according to claim 1, and contains two or more of Au, Au, Bi, and Sn, An Ag alloy sputtering target satisfying the following formulas (4) to (6) [second invention].
  • [Bi] represents Bi content (atomic%)
  • [Au] represents Au content (atomic%)
  • [Sn] represents Sn content (atomic%).
  • the invention's effect [0016]
  • the Ag alloy thin film according to the present invention has an initial reflectance of 88% or more, and is excellent in aggregation resistance and sulfidation resistance. For this reason, even if there is no protective coating, it can be used with a force S that can be suitably used as a reflective film.
  • the force S for forming such an Ag alloy reflective film can be achieved. That is, an Ag alloy reflective film is formed using the Ag alloy sputtering target according to the present invention, and this is heat-treated in an inert gas atmosphere at 130 to 200 ° C. to obtain an Ag alloy thin film according to the present invention. be able to.
  • FIG. 1 is a graph showing the relationship between the Au composition and the reflectance before and after the sulfidation test for an Ag—Au alloy thin film.
  • JP-A-55-85646 proposes the addition of Pd, Pt, and Au to improve sulfidation resistance.
  • Pd is reflected when added at 4at% (approximately 4wt%) or more in Ag. Since the rate becomes 88% or less, it is impossible to add even a composition that can prevent the aggregation of Ag! /.
  • Au is added in the case of an Ag alloy thin film formed by sputtering with Au added, as shown in Fig.
  • Bi and Au have an effect of suppressing aggregation due to halogen ions, as in the prior art.
  • this Ag alloy thin film may contain (A) Bi and Sn but not Au, and (B) may contain two or more of Au, Bi and Sn.
  • the effect of improving the aggregation resistance due to the inclusion of Au hereinafter referred to as the effect of improving the resistance to aggregation of Au
  • the resistance to sulfidation by heat treatment at 130 to 200 ° C in an inert gas atmosphere of the Au-containing material Effect hereinafter referred to as the effect of improving the sulfidation resistance of Au + heat treatment
  • the effect of improving the aggregation resistance of Au the effect of improving the sulfidation resistance of Au + heat treatment, and the improvement of sulfidation resistance by heat treatment at 130 to 200 ° C in an inert gas atmosphere of Sn-containing material
  • the effect (hereinafter referred to as the effect of improving the sulfidation resistance of the Sn + heat treatment and the repellency) is obtained, and the flocculation resistance and the sulfidation resistance are excellent.
  • the amount of the additive element (two or more of Au, Au, Bi, Sn) satisfies the above formulas (1) to (3). It is necessary to add.
  • the Ag alloy thin film according to the present invention is an Ag alloy thin film containing two or more of Au, Au, Bi, and Sn, and satisfies the above formulas (1) to (3)
  • the Ag alloy thin film is characterized by being heat-treated in an inert gas atmosphere at 130 to 200 ° C. Therefore, this Ag alloy thin film has an initial reflectance of 88% or more, and is excellent in aggregation resistance and sulfation resistance. For this reason, even if there is no protective coat, it can be suitably used as a reflective film.
  • the Ag alloy thin film containing two or more of Au, Au, Bi, and Sn is an Ag alloy thin film containing Au or an Ag alloy thin film containing two or more of Au, Bi, and Sn.
  • the temperature of the inert gas atmosphere: 130 200 ° C (that is, the temperature of the heat treatment in the inert gas atmosphere: 130 200 ° C) is that this temperature is higher than 130 ° C. If it is low, the effect of improving the sulfidation resistance of the Au + heat treatment and the effect of improving the sulfidation resistance of the Sn + heat treatment cannot be achieved, and if it is higher than 200 ° C, heat aggregation occurs during the heat treatment. This is because the reflectance is less than 88%.
  • the heat treatment temperature is 130 ° C. and the heat treatment temperature is low, it is preferable to lengthen the heat treatment time. For example, it may be 12 hours or longer at 130 ° C and 1 hour or longer at 150 ° C. If it is 200 ° C, it should be heat-treated for 10 minutes or longer.
  • the atmosphere of the heat treatment is an inert gas atmosphere.
  • other atmospheres for example, air, oxygen atmosphere, vacuum atmosphere
  • the inert gas is a rare gas such as nitrogen gas or argon gas.
  • the inert gas atmosphere is, for example, a nitrogen gas atmosphere, an argon gas atmosphere, or a mixed gas atmosphere of nitrogen gas and argon gas.
  • the vacuum atmosphere is not an inert gas atmosphere.
  • the thickness of the Ag alloy thin film according to the present invention is desirably 100 or more. This is because when the film thickness is less than 100 nm, visible light is not completely reflected and a transmission component is generated. More preferably, it is 120 nm or more, and further preferably 150 nm or more.
  • the composition of the sputtering target for producing the Ag alloy thin film according to the present invention may be the same as the film composition except for Bi. This is because a film having the same composition (content) as Sn is formed for Sn and Au. On the other hand, Bi has a lower composition in the film than the composition (content) in the target. This is thought to be because Bi re-evaporates from the film during film formation. For this reason, it is necessary to make the Bi composition in the target higher than the Bi composition in the film.
  • the yield of Bi in the film varies depending on the deposition conditions and deposition equipment S, and the Bi composition in the target is It is desirable that it is at least twice the composition in the film. Therefore, the composition of the sputtering target for producing the Ag alloy thin film according to the present invention should satisfy the above formulas (4) to (6).
  • the sputtering target for forming an Ag alloy thin film according to the present invention contains two or more of Au, Au, Bi, Sn and the above formulas (4) to (6)
  • a sputtering target made of an Ag alloy (Ag alloy sputtering target) characterized by satisfying According to this Ag alloy sputtering target, it is possible to form an Ag alloy thin film according to the present invention. That is, an Ag alloy thin film according to the present invention is obtained by forming an Ag alloy reflective film using this Ag alloy sputtering target and heat-treating it in an inert gas atmosphere at 130 to 200 ° C. Can do.
  • Ag alloy sputtering targets having various compositions were used as the sputtering target.
  • Deposition conditions are: substrate temperature: room temperature, Ar gas pressure:;! ⁇ 133-0.399? &), The distance between electrodes: 550101, and the deposition rate: 7-8 nm / s. Ultimate vacuum before film formation was less than 1 X 10- 5 torr (1.33 X 10- 3 Pa).
  • the visible light reflectance was measured by the method of JIS 3106.
  • the sulfide test was performed by immersing the thin film (Ag alloy thin film, Ag thin film) in 0.01 M Na S aqueous solution for 30 minutes and then measuring the visible light reflectance of the thin film.
  • the above thin film is placed in a constant temperature and humidity test bath at 60 ° C and 90RH%, and after 500 hours, the surface of the thin film is visually observed and the number of white spots (aggregation points) on the thin film surface is measured. It was done by doing.
  • Table 2 shows the number of white spots generated after the agglomeration test (constant temperature and humidity test). Measurement results of reflectance before sulfidation test, heat treatment in each atmosphere, sulfidation test result (reflectance after sulfidation test), and agglomeration test result [white after agglomeration test (constant temperature and humidity test) The number of points generated] is shown in Tables 3-6. In Tables! To 6, the number 1 indicates the results for the Ag thin film that is not the Ag alloy thin film.
  • the Ag alloy thin film (not heat-treated) after film formation has improved sulfidation resistance due to the addition of Au and Sn compared to the Ag thin film, but it is not sulfurized.
  • the reflectivity has decreased to less than 88% (sulfuration resistance is not sufficient).
  • those with numbers 2, 10, and 14 with an Au content of less than 1. Oat% have not sufficiently suppressed the occurrence of white spots (coagulation resistance is not sufficient).
  • the numbers 10 and 14 have a reflectance of less than 88% after the heat treatment and before the sulfidation test. Other than this, the reflectivity decreased to less than 88% by the sulfidation test, and the sulfidation resistance was poor.
  • an Ag alloy sputtering target having the composition shown in Table 7 was used as the sputtering target.
  • those with numbers 15, 16, and 19 do not satisfy equation (5) (1.0 ⁇ 5 [Bi] + [Au]), and those with number 17 have equations (6).
  • (2.0 ⁇ [Sn] + 2 [Au] 4 ) is not satisfied, and the one with number 22 satisfies equation (4) (2.64 [Bi] + 0.15 [Au] + 1.14 [Sn] ⁇ 8.7)
  • Other targets (numbers 18, 20, 21, 23, 24) satisfy the formulas (4) to (6). ing.
  • Table 8 shows the composition of the Ag alloy thin film thus formed.
  • the numbers in Table 8 indicate that deposition was performed using targets with the same target number. That is, the Ag alloy thin films of numbers 15 to 24 in Table 8 were formed using the targets of numbers 15 to 24 in Table 7. From Table 7 and Table 8, it can be seen that the content of Au and Sn in the film is equal to the content of Au and Sn in the target, and the Bi content in the film is almost 50% of the Bi content in the target. .
  • the Bi content was quantitatively analyzed using ICP-mass spectrometry (SPQ-8000 manufactured by Seiko Instruments Inc.).
  • Tables 10 to 13 show the reflectivity before the sulfidation test, the reflectivity after the sulfidation test, and the number of white spots after the agglomeration test (constant temperature and humidity test) for those after heat treatment in each atmosphere.
  • the Ag alloy thin films heat-treated in a nitrogen atmosphere and the Ag alloy thin films heat-treated in an argon atmosphere have improved resistance to sulfidation with numbers 15, 16, and 19.
  • white dots are generated because Equation (2) is not satisfied.
  • No. 17 does not satisfy the formula (3), and therefore has insufficient sulfidation resistance.
  • those with numbers 18, 20, 21, 23, and 24 maintained a reflectance of 88% or more after the sulfidation test, did not generate white spots, and were resistant to sulfidation and aggregation. It has excellent characteristics.
  • the Ag alloy thin films heat-treated in an oxygen gas atmosphere have a reflectance of 88% after heat treatment and before the sulfidation test. Is below. Numbers 16, 19, 23, and 24 have a force S that the reflectivity after heat treatment and before the sulfidation test is 88% or more, and the reflectivity has decreased to less than 88% after the sulfidation test, and are inferior in sulfidation resistance.
  • the Ag alloy thin film heat-treated in a vacuum atmosphere had a reflectivity decreased to less than 88% by the sulfidation test, and was inferior in sulfidation resistance. Even when the composition of the Ag alloy thin film satisfies the formulas (1) to (3)! /, It may not be possible to obtain excellent performance by heat treatment in an oxygen gas atmosphere or under vacuum. Recognize.
  • an Ag-2.0at% Sn-1.5at% Au alloy thin film with a thickness of lOOnm is formed on a glass substrate (Counging # 1737) with a diameter of 2 inches (5.08cm) and a thickness of 0.7mm. did.
  • the film forming conditions were as follows: substrate temperature: room temperature, Ar gas pressure:;! To 3 mtorr (0.133 to 0.3 99 Pa), distance between electrodes: 55 mm, film forming speed: 7 to 8 nm / s. Ultimate vacuum before film formation was less than 1 X 10- 5 torr (1.33 X 10- 3 Pa). Eight 8-2. ( ⁇ % 5.-1.5 & 1% eight 11 Go gold reflectance of the thin film immediately after the film formation was 94.3%.
  • the Ag alloy thin film (Ag-2.0at% Sn-1.5at% Au alloy thin film) thus formed is 100 in an argon gas atmosphere.
  • a sulfidation test for evaluating sulfidation resistance and an agglomeration test for evaluating flocculation resistance were performed. The results are shown in Table 14.
  • the Ag alloy thin film according to the present invention has an initial reflectivity of 88% or more, and is excellent in aggregation resistance and sulfidation resistance. It can be suitably used as a reflective film for automobile headlamps and rear lamps, and is useful.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
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  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un film mince d'alliage Ag ayant une réflectivité initiale de 88 % ou plus comparable à celle de Al et ayant une excellente résistance à l'agrégation et une excellente résistance au soufre ; et une cible de pulvérisation d'alliage Ag pour former le film mince d'alliage Ag. L'invention concerne spécifiquement : [1] un film mince d'alliage Ag contenant Au ou au moins deux éléments choisis parmi Au, Bi et Sn, qui satisfait les exigences représentées par les formules suivantes (1) à (3) : (1) 5,28[Bi] + 0,15[Au] + 1,14[Sn] ÿ 8,7 ; (2) 1,0 ÿ 10[Bi] + [Au] ; et (3) 2,0 ÿ [Sn] + 2[Au]4, et qui est traité par la chaleur dans une atmosphère de gaz inerte à 130 à 200°C ; et [2] une cible de pulvérisation d'alliage Ag pour former le film mince d'alliage Ag contenant Au ou au moins deux éléments choisis parmi Au, Bi et Sn, et qui satisfait les exigences représentées par les formules suivantes (4) à (6) : (4) 2,64[Bi] + 0,15[Au] + 1,14[Sn] ÿ 8,7 ; (5) 1,0 ÿ 5[Bi] + [Au] ; et (6) 2,0 ÿ [Sn] + 2[Au]4 (à la condition que les variables [Bi], [Au] et [Sn] dans les formules représentent respectivement les teneurs (%at) de Bi, Au et Sn).
PCT/JP2007/067847 2006-09-21 2007-09-13 FILM MINCE D'ALLIAGE Ag ET CIBLE DE PULVÉRISATION D'ALLIAGE Ag POUR LA FORMATION DU FILM MINCE D'ALLIAGE Ag WO2008035617A1 (fr)

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JP2006256136 2006-09-21
JP2006-256136 2006-09-21

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WO2008035617A1 true WO2008035617A1 (fr) 2008-03-27

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004139712A (ja) * 2002-08-20 2004-05-13 Kobe Steel Ltd 光情報記録媒体用反射膜と半透過反射膜、および光情報記録媒体ならびに光情報記録媒体用スパッタリングターゲット
JP2004197117A (ja) * 2002-12-16 2004-07-15 Ulvac Japan Ltd Ａｇ合金反射膜、スパッタリングターゲットおよびＡｇ合金薄膜製造方法
JP2005029849A (ja) * 2003-07-07 2005-02-03 Kobe Steel Ltd リフレクター用Ａｇ合金反射膜、及び、このＡｇ合金反射膜を用いたリフレクター、並びに、このＡｇ合金反射膜の形成用のＡｇ合金スパッタリングターゲット
JP2005264329A (ja) * 2004-02-19 2005-09-29 Ulvac Seimaku Kk Ａｇ合金膜及びその製造方法
JP2005332557A (ja) * 2004-04-21 2005-12-02 Kobe Steel Ltd 光情報記録媒体用半透過反射膜と反射膜、および光情報記録媒体ならびにスパッタリングターゲット
JP2006098856A (ja) * 2004-09-30 2006-04-13 Ulvac Japan Ltd Ａｇ系反射膜およびその作製方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004139712A (ja) * 2002-08-20 2004-05-13 Kobe Steel Ltd 光情報記録媒体用反射膜と半透過反射膜、および光情報記録媒体ならびに光情報記録媒体用スパッタリングターゲット
JP2004197117A (ja) * 2002-12-16 2004-07-15 Ulvac Japan Ltd Ａｇ合金反射膜、スパッタリングターゲットおよびＡｇ合金薄膜製造方法
JP2005029849A (ja) * 2003-07-07 2005-02-03 Kobe Steel Ltd リフレクター用Ａｇ合金反射膜、及び、このＡｇ合金反射膜を用いたリフレクター、並びに、このＡｇ合金反射膜の形成用のＡｇ合金スパッタリングターゲット
JP2005264329A (ja) * 2004-02-19 2005-09-29 Ulvac Seimaku Kk Ａｇ合金膜及びその製造方法
JP2005332557A (ja) * 2004-04-21 2005-12-02 Kobe Steel Ltd 光情報記録媒体用半透過反射膜と反射膜、および光情報記録媒体ならびにスパッタリングターゲット
JP2006098856A (ja) * 2004-09-30 2006-04-13 Ulvac Japan Ltd Ａｇ系反射膜およびその作製方法

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Title
ONISHI T. ET AL.: "Adding Metal Elements to Improve the Corrosion Resistance of Silver-based Thin Films", R&D/KOBE STEEL ENGINEERING REPORTS, vol. 52, no. 2, 1 September 2002 (2002-09-01), pages 17 - 22, XP003018729 *

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