+

WO2008020368A3 - Rf transmitter with controlable rf power amplifier - Google Patents

Rf transmitter with controlable rf power amplifier Download PDF

Info

Publication number
WO2008020368A3
WO2008020368A3 PCT/IB2007/053140 IB2007053140W WO2008020368A3 WO 2008020368 A3 WO2008020368 A3 WO 2008020368A3 IB 2007053140 W IB2007053140 W IB 2007053140W WO 2008020368 A3 WO2008020368 A3 WO 2008020368A3
Authority
WO
WIPO (PCT)
Prior art keywords
power amplifier
mode
class
transmitter
control circuit
Prior art date
Application number
PCT/IB2007/053140
Other languages
French (fr)
Other versions
WO2008020368A2 (en
Inventor
Mihai A T Sanduleanu
Ram P Aditham
Original Assignee
Koninkl Philips Electronics Nv
Mihai A T Sanduleanu
Ram P Aditham
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Mihai A T Sanduleanu, Ram P Aditham filed Critical Koninkl Philips Electronics Nv
Publication of WO2008020368A2 publication Critical patent/WO2008020368A2/en
Publication of WO2008020368A3 publication Critical patent/WO2008020368A3/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H03F1/0266—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the input signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3211—Modifications of amplifiers to reduce non-linear distortion in differential amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H03F3/45085—Long tailed pairs
    • H03F3/45089—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/331—Sigma delta modulation being used in an amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45638—Indexing scheme relating to differential amplifiers the LC comprising one or more coils
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45644—Indexing scheme relating to differential amplifiers the LC comprising a cross coupling circuit, e.g. comprising two cross-coupled transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)

Abstract

The invention provides a mult i- standard RF transmitter including a power amplifier (6) for amplifying an RF signal prior to generating an output RF signal (7). A mode of operation of the power amplifier can be controlled, e.g. between class AB and class D operation, by a control circuit (4) operationally connected (5) to the power amplifier (6). Preferably, the control circuit (4) operates as a common-mode control. The mode of operation of the power amplifier (6) is controlled in response to a control parameter, e.g. a level of the input signal (1), a required power, a required efficiency, a desired type of modulation, or a desired degree of linearity. Thus, with this capability to adjust a mode of operation of the power amplifier, the RF transmitter can comply with many communication standards with different requirements, e.g. class AB mode for high linearity and class D mode for high efficiency. The RF transmitter is suited for on-chip implementation. In preferred embodiments, the control circuit (4) generates an amplitude modulated signal (5) to the power amplifier (6) to control its mode of operation. Preferably, the power amplifier (6) includes separated paths for amplitude modulation signals and phase modulation signals, e.g. implemented as a differential cascode coupling with a mixer stage. Preferred embodiments are based on NPWM modulation of phase and amplitude signals, either in analog or digital domain.
PCT/IB2007/053140 2006-08-15 2007-08-08 Rf transmitter with controlable rf power amplifier WO2008020368A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06118946.0 2006-08-15
EP06118946 2006-08-15

Publications (2)

Publication Number Publication Date
WO2008020368A2 WO2008020368A2 (en) 2008-02-21
WO2008020368A3 true WO2008020368A3 (en) 2008-10-16

Family

ID=39082427

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2007/053140 WO2008020368A2 (en) 2006-08-15 2007-08-08 Rf transmitter with controlable rf power amplifier

Country Status (1)

Country Link
WO (1) WO2008020368A2 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3984783A (en) * 1975-03-27 1976-10-05 Motorola, Inc. Amplifier
US5059921A (en) * 1990-07-27 1991-10-22 Motorola Inc. Amplifier having two operating modes
EP0481524A2 (en) * 1990-10-19 1992-04-22 Nec Corporation Output level control circuit for use in RF power amplifier
WO1992011702A1 (en) * 1990-12-17 1992-07-09 Motorola, Inc. Dynamically biased amplifier
US5281925A (en) * 1992-11-17 1994-01-25 Acrodyne Industries, Inc. RF amplifier providing reduced drive response rise times and fall times
US6831517B1 (en) * 2002-12-23 2004-12-14 Intersil Americas, Inc. Bias-management system and method for programmable RF power amplifier

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3984783A (en) * 1975-03-27 1976-10-05 Motorola, Inc. Amplifier
US5059921A (en) * 1990-07-27 1991-10-22 Motorola Inc. Amplifier having two operating modes
EP0481524A2 (en) * 1990-10-19 1992-04-22 Nec Corporation Output level control circuit for use in RF power amplifier
WO1992011702A1 (en) * 1990-12-17 1992-07-09 Motorola, Inc. Dynamically biased amplifier
US5281925A (en) * 1992-11-17 1994-01-25 Acrodyne Industries, Inc. RF amplifier providing reduced drive response rise times and fall times
US6831517B1 (en) * 2002-12-23 2004-12-14 Intersil Americas, Inc. Bias-management system and method for programmable RF power amplifier

Also Published As

Publication number Publication date
WO2008020368A2 (en) 2008-02-21

Similar Documents

Publication Publication Date Title
CN101079597B (en) RF transmitter
CN103873077B (en) For detection of by the envelope detector of the envelope by power amplifier amplifying signal and method
WO2008039503A3 (en) Broadband low noise amplifier
EP2285059A3 (en) Digital transmitters for wireless communication
ATE544232T1 (en) RF AMPLIFIER WITH DIGITAL FILTER FOR POLAR TRANSMITTERS
WO2005120001A3 (en) Fully digital transmitter including a digital band-pass sigma-delta modulator
WO2006085177A8 (en) Variable bandwidth envelope modulator for use with envelope elimination and restoration transmitter architecture and method
WO2011140145A3 (en) Noise-canceling for differential amplifiers requiring no external matching
WO2007040826A3 (en) A radio frequency power amplifier circuit and method
ATE491265T1 (en) METHOD AND DEVICE FOR RECEIVING HIGH FREQUENCY SIGNALS
WO2007123792A3 (en) Switching power amplifier
EP1225690A3 (en) Transmitter circuits
TW200705802A (en) Linear and non-linear dual mode transmitter
ATE523957T1 (en) LOW NOISE TRANSCONDUCTANCE AMPLIFIER WITH SQUARE OUTPUT AND DIFFERENTIAL INPUT
WO2011084592A3 (en) Amplifier circuit
CN102257727A (en) Class ab amplifier with resistive level-shifting circuitry
WO2007133323A3 (en) Systems and methods of rf power transmission, modulation, and amplification
CN102064774A (en) Implementation method of power amplifying circuit and power amplifying device
ATE529944T1 (en) SWITCHING POWER GAIN
WO2005043747A3 (en) High linearity doherty communication amplifier with bias control
US12068774B2 (en) Transceiver with auxiliary receiver calibration apparatus and methodology
WO2009041096A1 (en) Power amplifying circuit, and transmitter and wireless communication device using the same
WO2008032264A3 (en) Amplifier architecture for polar modulation
CN103684268A (en) Low power consumption and high linearity gain controllable active orthogonal frequency mixer
KR100875201B1 (en) Cascode Structured Power Amplifier for Amplitude Modulation

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07826007

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

NENP Non-entry into the national phase

Ref country code: RU

122 Ep: pct application non-entry in european phase

Ref document number: 07826007

Country of ref document: EP

Kind code of ref document: A2

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载