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WO2008018159A1 - Système de génération de plasma de ligne à micro-ondes doté de deux blocs d'alimentation - Google Patents

Système de génération de plasma de ligne à micro-ondes doté de deux blocs d'alimentation Download PDF

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Publication number
WO2008018159A1
WO2008018159A1 PCT/JP2006/318403 JP2006318403W WO2008018159A1 WO 2008018159 A1 WO2008018159 A1 WO 2008018159A1 JP 2006318403 W JP2006318403 W JP 2006318403W WO 2008018159 A1 WO2008018159 A1 WO 2008018159A1
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WO
WIPO (PCT)
Prior art keywords
plasma
waveguide
microwave
line
gas
Prior art date
Application number
PCT/JP2006/318403
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English (en)
Japanese (ja)
Inventor
Takayuki Fukasawa
Raju Ramasamy
Tohru Yasuda
Ryohei Itatani
Hiroshi Kajiyama
Tsutae Shinoda
Original Assignee
Adtec Plasma Technology Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Adtec Plasma Technology Co., Ltd. filed Critical Adtec Plasma Technology Co., Ltd.
Priority to JP2008528712A priority Critical patent/JPWO2008018159A1/ja
Publication of WO2008018159A1 publication Critical patent/WO2008018159A1/fr

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge

Definitions

  • the present invention relates to a microwave plasma generator that generates plasma by exciting a plasma generating gas with a microwave, and particularly a large display panel having a large area such as a long film.
  • the present invention relates to a microwave line plasma generator for generating line-shaped plasma suitable for plasma processing of an object to be processed.
  • FIG. 11 is a diagram showing an overall configuration of an example of a conventional microwave line plasma generator
  • FIG. 12 is a perspective view of a main part of the microwave line plasma generator of FIG.
  • the microwave plasma generator includes a waveguide 51, a microwave generation source 53, a tapered waveguide 60 and a microwave supply source 53 that supply microwaves from the microwave generation source 53 to the waveguide 51.
  • an L-shaped waveguide 59, a gas source 55, and a gas supply tube 54 for supplying gas from the gas source 55 to the waveguide 51.
  • the starting end of the waveguide 51 is connected to the microphone mouth wave source 53 via the tapered waveguide 60 and the L-shaped waveguide 59.
  • An isolator 57 and a sleeving tab 58 are attached to the L-shaped waveguide 59 from the microwave generation source 53 side.
  • a short circuit plunger 62 is connected to the end of the waveguide 51 via a tapered waveguide 61.
  • waveguide 51 also has a flat rectangular waveguide force formed so that width a is larger than thickness b in a cross section perpendicular to the central axis.
  • the side surface 51a defining the width a of the waveguide 51 forms an H surface
  • the side surface 51b defining the thickness b forms an E surface
  • the slit 52 is the E of the waveguide 51. It is provided on the surface.
  • the microwave line plasma generator further includes plasma generation means for converting an electromagnetic field generated in the waveguide 51 into gas ionization energy.
  • the plasma generating means is formed on the side wall of the waveguide 51 and extends in the vicinity of the slit 52 extending from the gas source 55 to the slit 52 extending in the microwave propagation direction (the arrow X direction in FIG. 12).
  • Gas supply It consists of a gas supply pipe 54.
  • the gas supply pipe 54 is formed of a dielectric, and includes a buffer tank 56 formed in a dielectric casing at a portion upstream of the vicinity of the slit 52 of the waveguide 51. A certain amount of introduced gas can be stored.
  • the portion 54e downstream of the buffer tank 56 of the gas supply pipe 54 is configured as a single pipe having an elongated rectangular cross section, while the upstream side of the gas supply pipe 54 from the buffer tank 56 includes a plurality of pipes 54a to 54a. It is configured as an aggregate of 54d.
  • a portion 54e of the gas supply pipe 54 on the downstream side of the notfer tank 56 is disposed outside the waveguide 1 and in proximity to the side wall 5 lb provided with the slit 52 in the waveguide 51.
  • the slit 52 extends in the vertical direction with a width that covers the entire length 52, and the lower end of the downstream portion 54 e of the gas supply pipe 54 extends beyond the slit 52 by a certain length.
  • the notfer tank 56 has a cylindrical shape with both end openings closed, and the upper peripheral wall portion of the notfer tank 56 is connected to one end of the upstream side portion of the gas supply pipe 54 that also has the collective force of the four tubes 54a to 54d. The other ends of the four tubes 54a to 54d are connected to the gas source 55.
  • the gas stored in the notfer tank 56 is uniformly introduced into the downstream portion 54e of the gas supply pipe 54 over the entire elongated rectangular cross section, and supplied to the vicinity of the slit 52 of the waveguide 51.
  • the microwave force generated by the microwave generation source 53 is introduced into the waveguide 51 through the L-shaped waveguide 59 and the tapered waveguide 60, and gas is supplied from the gas source 55 to the gas supply. It is supplied to the vicinity of the slit 52 of the waveguide 51 through the tube 54.
  • the gas passing through the gas supply pipe 54 (downstream portion 54e) is converted into plasma by the electromagnetic field radiated from the slit 52, and the opening force at the lower end of the gas supply pipe 54 is also released (see Patent Document 1).
  • Fig. 13 is a graph showing the plasma density along the width direction of the gas supply pipe 54 (in the direction of the slit 52), measured for the plasma generated by this microwave line plasma generator.
  • Each graph is shown in the area about 40mm away) ing.
  • the distance in the z-axis direction represents the distance in the width direction in which one end force of the gas supply pipe 54 is also measured.
  • a graph of the plasma density in the plasma generation region predicted based on the measured plasma density measured in the vicinity of the plasma generation region is shown in FIG. It is shown in 13 (A).
  • the plasma density is significantly increased along the width direction of the gas supply pipe 54 in the conventional microwave line plasma generator so that the graph force of FIG.
  • the plasma density of the generated line-shaped plasma is not uniform in the plasma processing region, there is a problem that the efficiency of the plasma processing of the object to be processed is significantly reduced.
  • Patent Document 1 Japanese Patent Laid-Open No. 2005-340079
  • an object of the present invention is to provide a microwave line plasma generator capable of obtaining a uniform plasma density in a plasma processing region.
  • the first invention provides a waveguide, first and second microwave generation sources, the first microwave generation source, and one end opening of the waveguide. Connected between the first microwave transmission path for supplying microwaves into the waveguide, and between the second microwave generation source and the other end opening of the waveguide. A second microwave transmission path for supplying microwaves into the waveguide, and a transmission path for the microwave transmission paths provided in the middle of each of the first and second microwave transmission paths.
  • a transmission path length adjusting means for adjusting the length of the gas, a gas source for supplying a plasma generating gas, a plasma generation chamber provided in the waveguide, extending in a propagation direction of microwaves in the waveguide, and Plasma emission that emits plasma generated in the plasma generation chamber in a line shape Has the supplied gas for plasma generation to the gas MinamotoTsutomu the plasma generating chamber, subjected to the wave guide And a plasma generating means for generating plasma by exciting the supplied microwave and emitting the plasma outlet force. is there.
  • the first and second microwave transmission lines are each formed of a second waveguide, and the transmission line length adjusting means is a U-shaped third waveguide.
  • the third waveguide further includes a pair of parallel portions connected to the upstream portion and the downstream portion of the first and second microwave transmission paths, respectively, and the It is preferable that a pair of parallel portions are slidable with respect to them and a U-shaped portion that is fitted so that microwaves do not leak to the outside, and is a force.
  • each of the first and second microwave transmission paths is formed of a waveguide
  • the transmission path length adjusting means includes a circulator inserted in the middle of the first and second microwave transmission paths.
  • the short circuit plunger connected to the circulator is in force, or the first and second microwave transmission paths are each formed from a waveguide, and the transmission path length adjusting means is It is preferable to use Magic T.
  • the second invention also includes a waveguide, first and second microwave generation sources, one end side of the first microwave generation source and the waveguide.
  • a first microwave transmission path connected to the opening for supplying microwaves into the waveguide, and between the second microwave generation source and the other end opening of the waveguide.
  • a plasma generation chamber extending in the direction of propagation of the plasma, and a plasma discharge port for discharging the plasma generated in the plasma generation chamber in a line shape, and the gas source gas includes a plasma generation gas supplied to the plasma generation chamber.
  • Plasma generating means for generating a plasma and releasing the plasma from the plasma emission locus; and provided in the vicinity of a plasma emission port of the plasma generation means, and at least partially blocking the plasma emitted from the plasma emission locus.
  • a plasma density adjusting means for adjusting the density of the plasma.
  • the plasma density adjusting means is below the plasma discharge port and on one side or both sides of the plasma discharge port in the longitudinal direction of the plasma discharge port.
  • the rods are arranged in spaced-apart manner along the axis and support the rods, and the rods are arranged in the axial direction of each of the rods independently and across the plasma discharge port.
  • Plasma emission locusr It has rod body moving means for moving between a first position where the emitted plasma is at least partially shielded and a second position where the rod body does not contact the plasma.
  • the plasma density adjusting means includes a horizontal plate assembly disposed on one side or both sides of the plasma discharge port below the plasma discharge port, and the plate assembly includes A plurality of plate elements arranged adjacent to each other in the longitudinal direction of the plasma emission port, and further supporting the plate element, and each of the plate elements independently across the plasma emission port.
  • Plate element moving means for moving between a first position at least partially blocking the plasma emitted from the plasma emission locus and a second position where the plate element does not contact the plasma. It is preferable that
  • the waveguide has a flat rectangular waveguide force formed so that a width thereof is larger than a thickness in a cross section perpendicular to a central axis thereof.
  • the width a of the waveguide is equal to the wavelength of the microwave in the vacuum free space.
  • the width a corresponds to the wavelength ⁇ of the microwave inside the waveguide longer than the length of the plasma to be generated.
  • the waveguide is formed with a vertically long opening extending in a microwave propagation direction
  • the plasma generating means is made of a dielectric mounted in the opening of the waveguide.
  • a discharge tube, and a part of the peripheral wall of the discharge tube approaches or penetrates the internal space of the waveguide, and the peripheral wall portion exposed to the outside of the waveguide in the discharge tube
  • a plasma discharge port is formed, and a gas for generating plasma is supplied into the discharge tube from the gas source, and the plasma generating gas is excited in the discharge tube by microwaves, and the generated plasma is Plasma emission loca is also emitted.
  • the opening of the waveguide is provided on the H surface of the waveguide, the discharge tube is along the opening, and a part of the peripheral wall is inside the waveguide.
  • the plasma discharge port of the discharge tube is preferably installed so as to be close to or enter a space, and is preferably a vertically long opening extending in the length direction of the discharge tube! /.
  • the microwaves are supplied from each of the both end openings of the waveguide, and a superimposed wave of the two microwaves is generated in the waveguide, and is provided in the microwave supply path.
  • the waveform of the superimposed wave is changed to adjust the plasma density in the plasma generation chamber (plasma generation region), thereby plasma processing outside the plasma emission port It is possible to obtain a line plasma with a uniform density in the region.
  • microwaves are supplied from both ends of the waveguide, and a superimposed wave of the two microwaves is generated in the waveguide, and the plasma generation chamber (plasma generation) is generated by the superimposed wave.
  • plasma generation plasma generation
  • the plasma density adjusting means By generating plasma in the region) and adjusting the density of the plasma emitted from the plasma discharge port by the plasma density adjusting means, a line plasma with a uniform density can be obtained in the plasma processing region.
  • FIG. 1 is a diagram showing a schematic configuration of a microwave line plasma generator according to one embodiment of the present invention.
  • FIG. 2 is a diagram showing several embodiments of transmission path length adjusting means.
  • FIG. 3 is a sectional view taken along line m-m in FIG.
  • FIG. 4 is a cross-sectional view taken along line ii in FIG.
  • FIG. 5 is a cross-sectional view taken along the line II-II in FIG.
  • FIG. 6 is a graph showing the plasma density along the length direction of the plasma (the length direction of the plasma generation chamber of the discharge tube 25) for the line-shaped plasma generated by the apparatus of FIG. ) Shows a graph in the plasma generation chamber, and (B) shows a graph in the plasma processing region.
  • FIG. 7 Plasma density in the length direction of the plasma, measured at three different positions below the plasma emission port, for the line-shaped plasma generated by the microwave line plasma generator shown in Fig. 1. It is the shown graph.
  • FIG. 8 is a perspective view showing a schematic configuration of a microwave line plasma generator according to another embodiment of the present invention.
  • FIG. 9 is a view similar to FIG. 3 of the microwave line plasma generator shown in FIG. 8.
  • FIG. 10 is a perspective view showing a schematic configuration of a microwave line plasma generator according to another embodiment of the present invention.
  • FIG. 11 is a diagram showing an overall configuration of an example of a conventional microwave line plasma generator
  • FIG. 12 is a perspective view of the main part of the microwave line plasma generator shown in FIG. 11.
  • FIG. 13 is a graph showing the plasma density in the length direction of the plasma measured for the line-shaped plasma generated by the microwave line plasma generator shown in FIG. A graph in the plasma generation region and (B) show a graph in the plasma processing region, respectively.
  • Second microwave transmission line 6a, 6b taper waveguide
  • FIG. 1 is a diagram showing a schematic configuration of a microwave line plasma generator according to one embodiment of the present invention.
  • a flat rectangular waveguide 1 and first and second microphone mouth wave sources 2 and 3 are provided.
  • the first microwave transmission path 4 is connected between the first microwave generation source 2 and the opening at one end of the waveguide 1 so that the microwave is supplied into the waveguide 1.
  • a second microwave transmission path 5 is connected between the second microwave generation source 3 and the opening at the other end of the waveguide 1, and the microwave is inserted into the waveguide 1. They are starting to supply waves.
  • the first and second microwave transmission lines 4 and 5 are composed of tapered waveguides 6a and 6b and L-shaped waveguides 7a and 7b.
  • Isolators 8a and 8b and sleeving tabs 9a and 9b are attached to the L-shaped waveguides 7a and 7b from the microwave sources 2 and 3 side.
  • transmission path length adjusting means 10, 11 for adjusting the lengths of the transmission paths of the microphone mouth transmission paths are further provided.
  • FIG. 2A to 2C show several embodiments of the transmission path length adjusting means 10 and 11.
  • FIG. 2 (A) the transmission path length adjusting means comprises a U-shaped waveguide 19.
  • the U-shaped waveguide 19 is further connected to the upstream and downstream portions of the L-shaped waveguides 7a and 7b of the first and second microwave transmission lines 4 and 5, respectively.
  • a pair of parallel parts 20a, 20b and a U-shaped part 21 fitted to the pair of parallel parts 20a, 20b so that they can slide relative to each other and microwaves do not leak outside.
  • the U-shaped portion 21 has a portion that fits with the parallel portions 20a and 20b in the axial direction. A large number of pleats 21a are formed, and these pleats 21a and the inner wall surfaces of the parallel parts 20a, 20b always come into contact with each other!
  • the transmission path length adjusting means is the first and second microwave transmission paths.
  • It comprises a circulator 22 inserted in the middle of 4 and 5 and a short circuit plunger 23 connected to the circulator 22.
  • the microwave propagated upstream of the first and second microwave transmission lines 4 and 5 is bent at a right angle by the circulator 22 and introduced into the short circuit plunger 23.
  • the microwave introduced into the short circuit plunger 23 is then reflected at the end of the short circuit plunger 23 and directed toward the circuit 22. Then, it is bent at a right angle again and guided to the downstream side of the first and second microwave transmission paths 4 and 5.
  • the transmission path length is increased by the amount of microwaves traveling back and forth in the short circuit plunger 23.
  • the short circuit plunger 23 adjusts the transmission line lengths of the first and second microwave transmission lines.
  • the transmission path length adjusting means is composed of a magic T19 ′.
  • the microwave propagated from the upstream side of the first and second microwave transmission lines 4 and 5 is bent at a right angle by the branch portion of the magic T19 ', then reflected and branched again. Come back to the department. Then, half of the microwaves are transmitted downstream of the first and second microphone mouth wave transmission lines 4 and 5, and the other half are transmitted upstream. In other words, the transmission path length becomes longer as the microwave propagates back and forth in the magic T19 ′. Thus, the transmission line lengths of the first and second microwave transmission lines are adjusted by the magic T19 ′.
  • the waveguide 1 is provided with plasma generating means 16.
  • the plasma generation means 16 has a plasma generation chamber extending in the microwave propagation direction in the waveguide 1 and a plasma discharge port for discharging the plasma generated in the plasma generation chamber in a line shape.
  • FIG. 3 is a cross-sectional view taken along the line III--X in FIG. 1, and shows the configuration of the plasma generating means 16 in more detail.
  • 4 is a cross-sectional view taken along line II in FIG. 3, and FIG. It is sectional drawing along the ⁇ - ⁇ line.
  • the waveguide 1 is formed so that the width “a” is larger than the thickness “b” in a cross section perpendicular to the central axis thereof.
  • the width a of the waveguide is determined by the wavelength ⁇ of the microwave in vacuum, the wavelength ⁇ of the microwave inside the waveguide, and the width a of the waveguide a.
  • the width a corresponds to the microwave wavelength within the waveguide longer than the length of the plasma to be generated.
  • a vertically long opening extending in the propagation direction of the microwave is formed, and the discharge tube 25 is formed in this opening.
  • the discharge tube 25 is formed of a dielectric material such as quartz glass or ceramic, and both ends are closed, and the middle portion has an inverted U-shaped cross section.
  • the discharge tube 25 is disposed such that a part 25 ′ of the peripheral wall enters the internal space of the waveguide 1, and a vertically long opening facing the part 25 ′ of the peripheral wall faces downward.
  • a plasma generation chamber is formed in the discharge tube 25, and the vertically long opening of the discharge tube 25 forms a plasma emission port 17.
  • a part 25 ′ of the peripheral wall of the discharge tube 25 is configured to enter the internal space of the waveguide 1, but a part 25 ′ of the peripheral wall is close to the internal space of the waveguide 1.
  • a discharge tube 25 may be used.
  • the waveguide 1 is supported by the support block B, and the discharge tube 25 is held by the support block B.
  • gas introduction paths Gl and G2 for supplying gas to the discharge tube 25 are provided on both sides of the support block B.
  • a plurality of gas introduction paths Gl and G2 are arranged at equal intervals along the longitudinal direction of the support block B against the peripheral wall of the discharge tube 25 by force.
  • G1 is a gas introduction path for plasma generation, and is connected to a gas source 12 for plasma generation gas supply via a gas supply pipe 14, and G2 is a reaction gas introduction path, which is connected to a gas supply pipe 15 To the reactive gas supply gas source 13.
  • W is a coolant reflux path for cooling the heat generated in the discharge tube 25 by plasma. This coolant circulation path W is for preventing the waveguide 1 and the support block B from becoming hot due to the plasma heat in the discharge tube 25. It can be provided between the gas introduction paths G1 or on the side of the discharge tube 25.
  • a slit-like gas introduction opening 25 is provided along the longitudinal direction at the side of the discharge tube 25.
  • 25 is a burrow-like opening row.
  • the plasma generating gas introduction path G1 is provided with an expansion portion G1 ′ in the vicinity of the gas introduction portion to the discharge tube 25, and is connected to the gas introduction opening 25 ′′ at the expansion portion G1 ′.
  • the gas introduced from the plasma generating gas introduction path G1 is diffused in the lengthwise direction of the discharge tube 25 in the expanded portion G1 ′ and introduced into the discharge tube 25.
  • the reaction gas introduction path is provided.
  • the connecting portion between G2 and the discharge tube 25 has the same configuration.
  • Sl and S2 are baffle plates arranged in the expansion part G1 'of the gas introduction paths Gl and G2, that is, a gas diffusion plate having a large number of holes, and the flow of gas introduced from the gas introduction paths Gl and G2 It is spread in the longitudinal direction of the discharge tube 25 and guided uniformly into the discharge tube 25.
  • one end of the waveguide 1 through the first microwave transmission path 4 (the L-shaped waveguide 7a and the tapered waveguide 6a) generated by the first microwave generation source 2
  • the microwaves supplied from the side into the waveguide 1 and generated by the second microwave generation source 3 are transferred to the second microwave transmission path 5 (the L-shaped waveguide 7b and the tapered waveguide). It is supplied into the waveguide 1 from the other end side of the waveguide 1 through the wave tube 6b).
  • a superimposed wave of two microwaves is generated.
  • the plasma generating gas is supplied from the gas source 12 into the discharge tube 1 through the gas supply tube 14 and the gas introduction path G1. Then, the plasma generation gas is excited in the plasma generation chamber of the discharge tube 25 by the electromagnetic field generated by the superimposed wave generated in the waveguide 1, and is plasma-treated.
  • reaction gas is supplied from the gas source 13 into the discharge tube 1 through the gas supply tube 15 and the gas introduction path G2.
  • the reactive gas is generated by the electromagnetic field generated by the superimposed wave in the waveguide 1 and the plasma production.
  • the plasma generated by the excitation of the forming gas is excited in the plasma generation chamber of the discharge tube 25 and turned into plasma.
  • the plasma force of the mixed gas of the plasma generating gas and the reactive gas is discharged in a line form from the plasma discharge port 17.
  • the microwave supplied into the waveguide 1 through the transmission path 4 is changed.
  • the phase of the microwave supplied into the waveguide 1 through the transmission path 5 is changed. Is shifted, and the waveform of the superimposed wave in the waveguide 1 is changed.
  • a plasma having an energy density corresponding to the plasma is generated and emitted from the plasma discharge port 17, and a line-shaped plasma having a uniform density is obtained in the plasma processing region below the plasma generation region.
  • Fig. 6 is a graph showing the plasma density along the length direction of the plasma (the length direction of the plasma generation chamber of the discharge tube 25) for the line-shaped plasma generated by this apparatus.
  • (A) shows a graph in the plasma generation chamber
  • (B) shows a graph in the plasma processing region.
  • the distance in the z-axis direction represents the distance in the length direction in which one end force of the plasma is also measured.
  • the gas for generating plasma is introduced into G1 and the reaction gas is introduced into G2, and both gases may be mixed and introduced simultaneously from both gas introduction paths Gl and G2.
  • gas mixing in the discharge tube 14 is improved, which can contribute to plasma stabilization.
  • a gas for generating plasma is supplied to both gas introducing paths Gl and G2, or the reactive gas introducing pipe G Let's close 2 though.
  • 18 is a plasma processing chamber for performing plasma processing by irradiating an object to be processed with plasma emitted from the plasma generating means 16.
  • a hermetic seal such as a conventional vacuum plasma processing apparatus is required when operating in a low pressure state of a pressure S below atmospheric pressure to several Torr .
  • the apparatus used in this experiment comprises a waveguide with a width a of approximately 62 mm and a length c of approximately 600 mm, and a discharge tube with a width of approximately 10 mm, a depth of approximately 20 mm, and a length c ′ of approximately 500 mm. It was.
  • the gas introduction path G2 was closed, He gas was supplied from the gas introduction path G1 as a plasma generation gas, and lkW, 2.45 GHz microwave was introduced from both ends of the waveguide under a pressure of 2 Torr. did.
  • the y-axis (unit: mm) is set downward with the upper end of the inner wall of the discharge tube 25 as the origin (see Fig. 3).
  • the distance in the z direction on the horizontal axis represents the distance in the length direction that also measured one end force of the line-shaped plasma.
  • “Sono”, “Fist”, and “ ⁇ ” represent the measured values at the positions of 25 mm, 35 mm, and 40 mm, respectively. From the graph of FIG. 7, as described above, if a line-shaped plasma having a peak plasma density at both ends in the plasma generation chamber is generated, the position is 35 mm from the upper end of the inner wall of the discharge tube 25, that is, It can be seen that the plasma density is uniform at a position 15 mm below the plasma discharge port 17. If a plasma treatment region is provided at this position, a line plasma with uniform density can be obtained.
  • FIG. 8 is a schematic configuration of a microwave line plasma generator according to another embodiment of the present invention.
  • FIG. 9 is a view similar to FIG. 3 of the microwave line plasma generator shown in FIG. This embodiment differs from the embodiment shown in FIG. 1 only in the means for making the line plasma density uniform in the plasma processing region. Therefore, in FIG. 8 and FIG. 9, the same constituent elements as those shown in FIG. For the sake of clarity, the microwave generation source and the microwave transmission path are omitted in FIG.
  • the plasma discharge means 17 comprises plasma density adjusting means for adjusting the density of the plasma by at least partially blocking the plasma emitted from the plasma discharge port 17.
  • the plasma density adjusting means 31 is a conductor or dielectric that is arranged below the plasma discharge port 17 and on both sides of the plasma discharge port 17 at intervals along the longitudinal direction of the plasma discharge port 17.
  • bearings (not shown) for guiding!
  • the plasma portion shielded by the rod body 30 is not shielded by the rod body 30, and the plasma density is lower in the plasma processing region than the plasma portion. Therefore, by manually adjusting the position of each rod 30, a line plasma with a uniform density can be obtained in the plasma processing region.
  • FIG. 10 is a perspective view showing a schematic configuration of a microwave line plasma generator according to another embodiment of the present invention. This embodiment is different from the embodiment shown in FIG. 8 only in the configuration of the plasma density adjusting means. Therefore, in FIG. 10, the same components as those shown in FIG. 8 are denoted by the same reference numerals, and detailed description thereof is omitted.
  • the plasma density adjusting means 31 ′ has a horizontal plate assembly disposed below the plasma discharge port 17 and on both sides of the plasma discharge port 17. is doing.
  • the plate assembly is arranged adjacent to the longitudinal direction of the plasma emission port 17.
  • the plasma density adjusting means 31 ′ is further provided on the side walls 18 a and 18 b of the plasma processing chamber 18 to support the plate elements 32 a to 32 d and to each plate element 32 a to 32 d independently of the plasma discharge port 17.
  • a guide means (not shown!) That guides it so that it can slide.
  • the plasma portion blocked by the plate elements 32a to 32d is compared with the plasma portion not blocked by the plate elements 32a to 32d.
  • the plasma density is lowered in the region. Therefore, the density of the line plasma can be made uniform in the plasma processing region by manually adjusting the position of each plate element 32a to 32d.

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Abstract

La présente invention a trait à un système de génération de plasma de ligne à micro-ondes dans lequel une densité de plasma uniforme peut être obtenue dans la région de traitement de plasma. Le système de génération de plasma de ligne à micro-ondes comprend un guide d'ondes (1), des première et seconde sources de génération de micro-ondes (2, 3), un premier chemin de transmission de micro-ondes (4) connecté entre la première source de génération de micro-ondes et l'ouverture au niveau d'une extrémité du guide d'ondes et la fourniture d'une micro-onde dans le guide d'ondes, un second chemin de transmission de micro-ondes (5) connecté entre la second source de génération de micro-ondes et l'ouverture au niveau de l'autre extrémité du guide d'ondes et la fourniture d'une micro-onde dans le guide d'ondes, des moyens d'ajustement de longueur de chemin de transmission (10, 11) respectivement fournis sur la trajectoire des premier et second chemins de transmission de micro-ondes afin d'ajuster la longueur de chemin de transmission du chemin de transmission de micro-ondes, des sources de gaz (12, 13), et des moyens de génération de plasma (16). Les moyens de génération de plasma (16) sont dotés d'une chambre de génération de plasma s'étendant dans la direction de propagation des micro-ondes dans le guide d'ondes et d'une ouverture de décharge de plasma permettant de décharger un plasma généré dans la chambre de génération de plasma sous la forme d'une ligne.
PCT/JP2006/318403 2006-08-08 2006-09-15 Système de génération de plasma de ligne à micro-ondes doté de deux blocs d'alimentation WO2008018159A1 (fr)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150020735A1 (en) * 2009-05-08 2015-01-22 Peter F. Vandermeulen Methods and systems for plasma deposition and treatment
KR101690625B1 (ko) * 2015-06-22 2017-01-09 한국기초과학지원연구원 대면적 ecr 플라즈마 발생장치
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US10490386B2 (en) 2017-06-27 2019-11-26 Peter F. Vandermeulen Methods and systems for plasma deposition and treatment
US10861667B2 (en) 2017-06-27 2020-12-08 Peter F. Vandermeulen Methods and systems for plasma deposition and treatment

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US9520271B2 (en) 2009-05-08 2016-12-13 Peter F. Vandermeulen Methods and systems for plasma deposition and treatment
US9653265B2 (en) 2009-05-08 2017-05-16 Peter F. Vandermeulen Methods and systems for plasma deposition and treatment
US9847212B2 (en) 2009-05-08 2017-12-19 Peter F. Vandermeulen Methods and systems for plasma deposition and treatment
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KR101690625B1 (ko) * 2015-06-22 2017-01-09 한국기초과학지원연구원 대면적 ecr 플라즈마 발생장치
KR101858867B1 (ko) * 2016-12-23 2018-05-16 한국기초과학지원연구원 챔버 내부에서 전자파를 방출하여 플라즈마를 생성하는 플라즈마 처리 장치
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US10490386B2 (en) 2017-06-27 2019-11-26 Peter F. Vandermeulen Methods and systems for plasma deposition and treatment
US10861669B2 (en) 2017-06-27 2020-12-08 Peter F. Vandermeulen Methods and systems for plasma deposition and treatment
US10861667B2 (en) 2017-06-27 2020-12-08 Peter F. Vandermeulen Methods and systems for plasma deposition and treatment
KR101980273B1 (ko) * 2017-11-23 2019-05-21 한국기초과학지원연구원 선형 마이크로웨이브 플라즈마 발생장치

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