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WO2008013069A1 - Dispositif el - Google Patents

Dispositif el Download PDF

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Publication number
WO2008013069A1
WO2008013069A1 PCT/JP2007/063971 JP2007063971W WO2008013069A1 WO 2008013069 A1 WO2008013069 A1 WO 2008013069A1 JP 2007063971 W JP2007063971 W JP 2007063971W WO 2008013069 A1 WO2008013069 A1 WO 2008013069A1
Authority
WO
WIPO (PCT)
Prior art keywords
shell
core portion
core
shell layer
layer
Prior art date
Application number
PCT/JP2007/063971
Other languages
English (en)
Japanese (ja)
Inventor
Miho Ikenishi
Satoshi Kobayashi
Yuki Iguchi
Original Assignee
Hoya Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corporation filed Critical Hoya Corporation
Priority to JP2008526727A priority Critical patent/JPWO2008013069A1/ja
Publication of WO2008013069A1 publication Critical patent/WO2008013069A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/56—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing sulfur
    • C09K11/562—Chalcogenides
    • C09K11/565—Chalcogenides with zinc cadmium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium

Definitions

  • the present invention relates to an EL element (electric mouth luminescence element) of a type that emits light by injecting carriers into luminescent particles by applying an alternating electric field.
  • the second semiconductor fine particles are made of the first semiconductor. Dispersed in the continuous phase. When an alternating electric field is applied to the EL element, carriers generated from the first semiconductor collide with the second semiconductor fine particles, and the second semiconductor fine particles are excited to emit light when returning to the ground state. Arise.
  • Patent Document 1 Japanese Patent Laid-Open No. 2003-249373
  • Patent Document 2 Japanese Patent Laid-Open No. 2003-173878
  • Patent Document 1 cannot realize the light emission efficiency expected to reduce the carrier injection efficiency into the fine particles of the second semiconductor. This is because the scattering of carriers due to impurities mixed during the formation of the light emitting layer and the low continuity at the interface between the first semiconductor and the second semiconductor fine particles, resulting in a decrease in the “quantum confinement effect”. It is thought to be due to this.
  • a first aspect of the present invention is an EL device in which a light emitting layer includes a quantum dot having a core-shell structure in which a surface of a core portion is covered with a shell layer, and emits light by applying an alternating electric field.
  • the layer is made of a material having a larger band gap than the material of the core portion, and the shell
  • This is an EL device with a film thickness of 5 nm to 100 nm.
  • a second aspect of the present invention is an EL device in which the light emitting layer includes a quantum dot having a core-shell structure in which the surface of the core portion is covered with a shell layer, and emits light by applying an alternating electric field.
  • the layer is made of a material having a band gap larger than that of the material of the core portion, and is an EL element that emits light when intrinsic charge carriers existing in the shell layer are supplied to the core portion.
  • a third aspect of the present invention is the EL device according to the first or second aspect, wherein the light-emitting layer has core-shell structured particles mixed with a binder material.
  • a fourth aspect of the present invention is the EL element according to the third aspect, wherein the binder material is a dielectric.
  • a fifth aspect of the present invention is the EL device according to any one of the first to third aspects, in which the quantum dot has an organic side chain outside the shell.
  • a sixth aspect of the present invention is the EL device according to any one of the first to fifth aspects, wherein the core portion has a particle size of 1 to: LOnm.
  • the core portion and the carrier injection that are hardly affected by the contamination of impurities during the formation of the light-emitting layer can be obtained by a simple manufacturing method.
  • the continuity of the interface of the shell layer as a layer can be ensured, and carriers present in the shell layer can be efficiently injected into the core portion.
  • the EL element (electric aperture luminescence element) according to this embodiment has a configuration in which a first insulating layer, a light emitting layer, and a second insulating layer are sequentially stacked between a pair of electrodes.
  • an Au (gold) metal electrode and an ITO (indium stannate) transparent electrode can be used as the pair of electrodes.
  • the Au electrode is formed by vacuum evaporation using a normal resistance heating evaporation source.
  • the ITO electrode used is a film formed on a glass substrate. You may form by sputtering method and other well-known means.
  • the two insulating layers are formed, for example, by sputtering or the like using silicon nitride, tantalum oxide, silicon oxide, yttrium oxide, alumina, hafnium oxide, or norium tantalum oxide. be able to.
  • the light emitting layer also constitutes only a core-shell quantum dot force. This eliminates the need to uniformly disperse the particles in the needle and reduces the possibility of impurities being mixed. However, if it is difficult to form a light-emitting layer using only core-shell quantum dots, it is advisable to improve the adhesion to the insulating layer by mixing with a binder.
  • the core-shell structure quantum dot has a structure in which the surface of the core portion is covered with a shell layer.
  • the material and the particle size are appropriately determined according to the emission wavelength required for the EL element.
  • the particle size of the core portion is formed in a spherical shape by a known method (for example, a wet chemical synthesis method (liquid phase synthesis method), a laser ablation method), which is preferably selected based on a force within the range of 1 to lOnm.
  • the Chenole layer is composed of ZnS, ZnSe, CaS, SrS, BaS, CaGa S, SrGa S, ZnM
  • a material having a large band gap is used, for example, formed by a liquid phase synthesis method, a vapor deposition method, an aerosol deposition method or a spray coating method.
  • the quantum dot obtained by the liquid phase synthesis method usually has a ligand having an organic side chain force around the shell layer so that the solvent dispersibility is high.
  • the supply power of intrinsic charge carriers to the core portion is a shell layer formed around the core portion. It will not contribute. Therefore, the quantum dots can be used for the light emitting layer while the organic side chain exists around the shell layer.
  • the specific charge carriers supplied to the core portion are naturally supplied from the shell layer formed around the core portion, but the adjacent quantum dots or remote quantum dot shells are used. Even layer strength will be supplied.
  • a dielectric is preferred from the viewpoint of application of an alternating electric field.
  • epoxy resin vinylidene fluoride resin, cyanocellulose, cyanopolyvinyl alcohol, Polyethylene, polypropylene, polystyrene resin, and silicone resin can be used.
  • the binder can be formed by a relatively simple film formation method such as spin coating, screen printing, dip coating, or spray coating.
  • the EL device of this embodiment is excited and emits light by applying an alternating electric field between a pair of electrodes and injecting carriers into the core portion.
  • the injected carriers exist in the shell layer.
  • the shell layer can have a predetermined thickness and an alternating electric field can be generated at a predetermined period.
  • the predetermined thickness of the shell layer is 5 ⁇ ! It is selected from the range of ⁇ 10 Onm, and the predetermined period can be selected so that only the carriers existing in the shell can be injected into the core portion in combination with the predetermined film thickness.
  • Example 1 of the above embodiment will be described.
  • An ITO electrode formed on a glass substrate (crystallite size film thickness; approximately lOOnm, surface roughness Ra; approximately 50nm) is used.
  • a TaO film was grown as an insulating layer and the substrate was grown at room temperature using a high-frequency magnetron 'sputtering apparatus.
  • the film thickness of the insulating layer was about 400 nm.
  • CdSe (core part) ZZnS (shell layer) quantum dots having a CoreZShell structure surface-modified with TOPO (trioctylphosphine oxide) are dispersed in a cyanoethylcellulose solution (binder). Was spin-coated and dried to form a film.
  • the substrate temperature during drying can be selected from room temperature to around 200 ° C However, it is preferably 100 ° C or lower. This is because if it is too high, the light emission activity of the quantum dots deteriorates.
  • the thickness of the deposited film was about 1 ⁇ m.
  • an insulating layer TaO film was grown to a thickness of about 400 ⁇ m, and an Au electrode having a thickness of about 500 nm was formed by vacuum deposition using a shadow mask.
  • TaO Z CdSe (core diameter: about 5.2 nm) ZZnS (shell thickness: about 15 nm) quantum dot-cyanoethyl cellulose binder) ZTaO ZAu is laminated in this order to form an EL device.
  • An EL spectrum single peak centered around 600 nm, which is the emission color originating from the quantization level of the quantum dot core, was obtained.
  • the photoluminescence (PL) of the EL device was measured using a fluorescence spectrophotometer FP-6500DS manufactured by JASCO Corporation using monochromatic light with a wavelength of 350 nm as excitation light. All sample temperatures at the time of measurement are room temperature. At this time, the PL spectrum of the used raw material dispersion was also measured. The EL measurement was performed by applying a low-frequency sine wave voltage between the ITO and Au electrodes.
  • Example 2 CdSe (core part) ZZnS (shell layer) quantum dots having a CoreZShell structure surface-modified with TOPO (trioctylphosphine oxide) in Example 1 described above! Instead of, EL elements were formed in the same manner except that InP (core part) ZZnSe (shell layer) quantum dots having a CoreZShell structure surface-modified with TOPO were used.
  • the quantum dots used in Example 2 had a core diameter of about 2.6 nm and a shell thickness of about 12 nm.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)

Abstract

L'invention concerne un dispositif EL qui émet de la lumière lorsqu'un champ de courant alternatif lui est appliqué. Dans le dispositif EL, une couche émettrice de lumière contient un point quantique ayant une structure cœur-enveloppe, la surface d'une partie de cœur étant recouverte d'une couche d'enveloppe. La couche d'enveloppe est constituée d'un matériau ayant une bande interdite plus large que celle du matériau de la partie de cœur, et l'épaisseur de la couche d'enveloppe est comprise entre 5 et 100 nm.
PCT/JP2007/063971 2006-07-28 2007-07-13 Dispositif el WO2008013069A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008526727A JPWO2008013069A1 (ja) 2006-07-28 2007-07-13 Ｅｌ素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006-205625 2006-07-28
JP2006205625 2006-07-28

Publications (1)

Publication Number Publication Date
WO2008013069A1 true WO2008013069A1 (fr) 2008-01-31

Family

ID=38981382

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/063971 WO2008013069A1 (fr) 2006-07-28 2007-07-13 Dispositif el

Country Status (3)

Country Link
JP (1) JPWO2008013069A1 (fr)
CN (1) CN101449626A (fr)
WO (1) WO2008013069A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015107790A1 (fr) * 2014-01-16 2015-07-23 コニカミノルタ株式会社 Élément électroluminescent
WO2015114679A1 (fr) * 2014-01-29 2015-08-06 株式会社ダイセル Conjugué à base de boîtes quantiques, élément de conversion de longueur d'onde contenant le conjugué, dispositif de conversion photoélectrique, et cellule photovoltaïque
WO2020174604A1 (fr) * 2019-02-27 2020-09-03 シャープ株式会社 Élément électroluminescent et dispositif d'affichage l'utilisant

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103715370B (zh) 2013-12-26 2017-08-08 合肥京东方光电科技有限公司 微胶囊的制备方法
CN104701430B (zh) * 2015-02-10 2017-12-08 河南大学 一种改善量子点发光二极管寿命的方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000228285A (ja) * 1999-02-05 2000-08-15 Matsushita Electric Ind Co Ltd 多色発光分散型ｅｌランプ
WO2004081141A1 (fr) * 2003-03-11 2004-09-23 Philips Intellectual Property & Standards Gmbh Diode electroluminescente a points quantiques
JP2005505428A (ja) * 2001-10-02 2005-02-24 クァンタム・ドット・コーポレイション 半導体ナノ粒子合成方法
JP2005132947A (ja) * 2003-10-30 2005-05-26 Konica Minolta Medical & Graphic Inc 無機エレクトロルミネッセンス用蛍光体、その製造方法および無機エレクトロルミネッセンス素子
WO2005071764A1 (fr) * 2004-01-23 2005-08-04 Hoya Corporation Dispositif electroluminescent a points quantiques et procede de fabrication de celui-ci

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000228285A (ja) * 1999-02-05 2000-08-15 Matsushita Electric Ind Co Ltd 多色発光分散型ｅｌランプ
JP2005505428A (ja) * 2001-10-02 2005-02-24 クァンタム・ドット・コーポレイション 半導体ナノ粒子合成方法
WO2004081141A1 (fr) * 2003-03-11 2004-09-23 Philips Intellectual Property & Standards Gmbh Diode electroluminescente a points quantiques
JP2005132947A (ja) * 2003-10-30 2005-05-26 Konica Minolta Medical & Graphic Inc 無機エレクトロルミネッセンス用蛍光体、その製造方法および無機エレクトロルミネッセンス素子
WO2005071764A1 (fr) * 2004-01-23 2005-08-04 Hoya Corporation Dispositif electroluminescent a points quantiques et procede de fabrication de celui-ci

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015107790A1 (fr) * 2014-01-16 2015-07-23 コニカミノルタ株式会社 Élément électroluminescent
JPWO2015107790A1 (ja) * 2014-01-16 2017-03-23 コニカミノルタ株式会社 電界発光素子
US9773993B2 (en) 2014-01-16 2017-09-26 Konica Minolta, Inc. Electroluminescence element
WO2015114679A1 (fr) * 2014-01-29 2015-08-06 株式会社ダイセル Conjugué à base de boîtes quantiques, élément de conversion de longueur d'onde contenant le conjugué, dispositif de conversion photoélectrique, et cellule photovoltaïque
US9796920B2 (en) 2014-01-29 2017-10-24 Daicel Corporation Quantum dot composite and wavelength conversion element, photoelectric conversion device, and solar cell having the composite
WO2020174604A1 (fr) * 2019-02-27 2020-09-03 シャープ株式会社 Élément électroluminescent et dispositif d'affichage l'utilisant

Also Published As

Publication number Publication date
JPWO2008013069A1 (ja) 2009-12-17
CN101449626A (zh) 2009-06-03

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