WO2008001252A3 - Method for manufacturing mems devices with moveable structure - Google Patents
Method for manufacturing mems devices with moveable structure Download PDFInfo
- Publication number
- WO2008001252A3 WO2008001252A3 PCT/IB2007/052269 IB2007052269W WO2008001252A3 WO 2008001252 A3 WO2008001252 A3 WO 2008001252A3 IB 2007052269 W IB2007052269 W IB 2007052269W WO 2008001252 A3 WO2008001252 A3 WO 2008001252A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- stiction
- buried oxide
- etch
- structures
- special equipment
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
- B81C1/0092—For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
- B81C1/00952—Treatments or methods for avoiding stiction during the manufacturing process not provided for in groups B81C1/00928 - B81C1/00944
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
- B81B3/001—Structures having a reduced contact area, e.g. with bumps or with a textured surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
- B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
Abstract
After the release etch of MEMS structures stiction is a well-known problem. Especially for the buried oxide etch on SOI wafers because of the very flat surfaces. Methods to prevent stiction are etching with an etch liquid but the wafers are dried in a CPD tool or alternatively etching with a vapor. However these methods require special equipment and are only effective for the release etch. A simple method for the formation of anti-stiction structures is described in order to prevent direct mechanical contact. The buried oxide is etched in a controlled way and stopped before the buried oxide is totally etched away. The buried oxide residues form anti-stiction structures and prevent direct contact between the resonator and the substrate. For this method no special equipment is required and the process complexity is not increased.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP06116280 | 2006-06-29 | ||
| EP06116280.6 | 2006-06-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2008001252A2 WO2008001252A2 (en) | 2008-01-03 |
| WO2008001252A3 true WO2008001252A3 (en) | 2008-02-21 |
Family
ID=38698229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/IB2007/052269 WO2008001252A2 (en) | 2006-06-29 | 2007-06-14 | Method for manufacturing mems devices with moveable structure |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2008001252A2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101462691B (en) * | 2007-12-19 | 2011-08-24 | 清华大学 | Method for forming gap by etching sacrificial layer |
| JP2012040619A (en) * | 2010-08-13 | 2012-03-01 | New Japan Radio Co Ltd | Capacity type mems sensor and method of manufacturing the same |
| CN109879241A (en) * | 2019-02-25 | 2019-06-14 | 湖南大学 | A method for preparing large-area releasable micro-nano structures |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10135488A (en) * | 1996-10-29 | 1998-05-22 | Murata Mfg Co Ltd | Manufacture of semiconductor processed part |
| US5939171A (en) * | 1995-01-24 | 1999-08-17 | Siemens Aktiengesellschaft | Micromechanical component |
| US6004832A (en) * | 1994-10-21 | 1999-12-21 | The Board Of Trustees Of The Leland Stanford Junior University | Method of fabricating an electrostatic ultrasonic transducer |
| US6346735B1 (en) * | 1999-09-30 | 2002-02-12 | Fuji Electric Co., Ltd. | Semiconductor sensor structure and method of manufacturing the same |
-
2007
- 2007-06-14 WO PCT/IB2007/052269 patent/WO2008001252A2/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6004832A (en) * | 1994-10-21 | 1999-12-21 | The Board Of Trustees Of The Leland Stanford Junior University | Method of fabricating an electrostatic ultrasonic transducer |
| US5939171A (en) * | 1995-01-24 | 1999-08-17 | Siemens Aktiengesellschaft | Micromechanical component |
| JPH10135488A (en) * | 1996-10-29 | 1998-05-22 | Murata Mfg Co Ltd | Manufacture of semiconductor processed part |
| US6346735B1 (en) * | 1999-09-30 | 2002-02-12 | Fuji Electric Co., Ltd. | Semiconductor sensor structure and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008001252A2 (en) | 2008-01-03 |
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