+

WO2002057180A3 - Soi/glass process for forming thin silicon micromachined structures - Google Patents

Soi/glass process for forming thin silicon micromachined structures Download PDF

Info

Publication number
WO2002057180A3
WO2002057180A3 PCT/US2001/050089 US0150089W WO02057180A3 WO 2002057180 A3 WO2002057180 A3 WO 2002057180A3 US 0150089 W US0150089 W US 0150089W WO 02057180 A3 WO02057180 A3 WO 02057180A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon
layer
soi
recesses
silicon oxide
Prior art date
Application number
PCT/US2001/050089
Other languages
French (fr)
Other versions
WO2002057180A2 (en
Inventor
Cleopatra Cabuz
Jeffrey Alan Ridley
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Priority to AT01993334T priority Critical patent/ATE447538T1/en
Priority to DE60140379T priority patent/DE60140379D1/en
Priority to EP01993334A priority patent/EP1345844B1/en
Publication of WO2002057180A2 publication Critical patent/WO2002057180A2/en
Publication of WO2002057180A3 publication Critical patent/WO2002057180A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/0015—Cantilevers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/019—Bonding or gluing multiple substrate layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Glass Compositions (AREA)

Abstract

Methods for making thin silicon layers suspended over recesses (30) in glass wafers (22). One method includes providing a thin silicon-on-insulator (SOI) wafer (21), and a glass wafer (22). The SOI wafer (21) can include a silicon oxide layer (50) disposed between a first undoped or substantially undoped silicon layer (20) and a second silicon layer (60). Recesses (30) can be formed in the glass wafer surface (24) and electrodes (38) may be formed on the glass wafer surface (24). The first silicon layer (20) of the SOI wafer (21) is then bonded to the glass wafer surface (24) having the recesses (30), and the second silicon layer (60) is subsequently removed using the silicon oxide layer (50) as an etch stop. Next, the silicon oxide layer (50) is removed. The first silicon layer (20) can then be etched to form the desired structure. In another illustrative embodiment, the first silicon layer (120) has a patterned metal layer (129) positioned adjacent the recesses (30) in the glass wafer (22). The, the second silicon layer (60) is removed using the silicon oxide layer (50) as an etch stop, and the silicon oxide layer (50) is subsequently removed. The first silicon layer (120) is then etched using the patterned metal layer (129) as an etch stop. The patterned metal layer (120) is then removed.
PCT/US2001/050089 2000-12-27 2001-12-20 Soi/glass process for forming thin silicon micromachined structures WO2002057180A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AT01993334T ATE447538T1 (en) 2000-12-27 2001-12-20 SOI/GLASS PROCESS FOR PRODUCING THIN MICRO-MACHINED STRUCTURES
DE60140379T DE60140379D1 (en) 2000-12-27 2001-12-20 SOI / GLASS PROCESS FOR THE PRODUCTION OF THIN MICROPRODUCTED STRUCTURES
EP01993334A EP1345844B1 (en) 2000-12-27 2001-12-20 Soi/glass process for forming thin silicon micromachined structures

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/748,488 2000-12-27
US09/748,488 US6582985B2 (en) 2000-12-27 2000-12-27 SOI/glass process for forming thin silicon micromachined structures

Publications (2)

Publication Number Publication Date
WO2002057180A2 WO2002057180A2 (en) 2002-07-25
WO2002057180A3 true WO2002057180A3 (en) 2003-03-13

Family

ID=25009658

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/050089 WO2002057180A2 (en) 2000-12-27 2001-12-20 Soi/glass process for forming thin silicon micromachined structures

Country Status (6)

Country Link
US (1) US6582985B2 (en)
EP (1) EP1345844B1 (en)
AT (1) ATE447538T1 (en)
DE (1) DE60140379D1 (en)
TW (1) TW521060B (en)
WO (1) WO2002057180A2 (en)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7381630B2 (en) 2001-01-02 2008-06-03 The Charles Stark Draper Laboratory, Inc. Method for integrating MEMS device and interposer
US6890834B2 (en) * 2001-06-11 2005-05-10 Matsushita Electric Industrial Co., Ltd. Electronic device and method for manufacturing the same
US6746890B2 (en) * 2002-07-17 2004-06-08 Tini Alloy Company Three dimensional thin film devices and methods of fabrication
US7040323B1 (en) * 2002-08-08 2006-05-09 Tini Alloy Company Thin film intrauterine device
US20040065638A1 (en) * 2002-10-07 2004-04-08 Bishnu Gogoi Method of forming a sensor for detecting motion
US7064055B2 (en) * 2002-12-31 2006-06-20 Massachusetts Institute Of Technology Method of forming a multi-layer semiconductor structure having a seamless bonding interface
US20040124538A1 (en) * 2002-12-31 2004-07-01 Rafael Reif Multi-layer integrated semiconductor structure
WO2004061961A1 (en) * 2002-12-31 2004-07-22 Massachusetts Institute Of Technology Multi-layer integrated semiconductor structure having an electrical shielding portion
KR101011592B1 (en) * 2003-06-06 2011-01-27 훈츠만 어드밴스트 머티리얼스(스위처랜드) 게엠베하 Optical microelectromechanical structures
SG120947A1 (en) 2003-08-14 2006-04-26 Sensfab Pte Ltd A three-axis accelerometer
US7221827B2 (en) 2003-09-08 2007-05-22 Aegis Semiconductor, Inc. Tunable dispersion compensator
KR20070003766A (en) * 2003-10-07 2007-01-05 이지스 세미컨덕터 인코포레이티드 Variable optical filter with heaters on CT matched transparent substrates
US7005732B2 (en) * 2003-10-21 2006-02-28 Honeywell International Inc. Methods and systems for providing MEMS devices with a top cap and upper sense plate
US7586828B1 (en) 2003-10-23 2009-09-08 Tini Alloy Company Magnetic data storage system
US7422403B1 (en) 2003-10-23 2008-09-09 Tini Alloy Company Non-explosive releasable coupling device
US7012322B2 (en) * 2003-12-22 2006-03-14 Honeywell International Inc. Method for reducing harmonic distortion in comb drive devices
US7632361B2 (en) * 2004-05-06 2009-12-15 Tini Alloy Company Single crystal shape memory alloy devices and methods
US7036373B2 (en) 2004-06-29 2006-05-02 Honeywell International, Inc. MEMS gyroscope with horizontally oriented drive electrodes
US20060118210A1 (en) * 2004-10-04 2006-06-08 Johnson A D Portable energy storage devices and methods
US7258010B2 (en) * 2005-03-09 2007-08-21 Honeywell International Inc. MEMS device with thinned comb fingers
US7763342B2 (en) * 2005-03-31 2010-07-27 Tini Alloy Company Tear-resistant thin film methods of fabrication
US7527997B2 (en) * 2005-04-08 2009-05-05 The Research Foundation Of State University Of New York MEMS structure with anodically bonded silicon-on-insulator substrate
US7441888B1 (en) 2005-05-09 2008-10-28 Tini Alloy Company Eyeglass frame
US7540899B1 (en) 2005-05-25 2009-06-02 Tini Alloy Company Shape memory alloy thin film, method of fabrication, and articles of manufacture
US7469588B2 (en) * 2006-05-16 2008-12-30 Honeywell International Inc. MEMS vertical comb drive with improved vibration performance
US20080075557A1 (en) * 2006-09-22 2008-03-27 Johnson A David Constant load bolt
US20080213062A1 (en) * 2006-09-22 2008-09-04 Tini Alloy Company Constant load fastener
WO2008133738A2 (en) 2006-12-01 2008-11-06 Tini Alloy Company Method of alloying reactive components
WO2008092028A1 (en) 2007-01-25 2008-07-31 Tini Alloy Company Frangible shape memory alloy fire sprinkler valve actuator
US8584767B2 (en) 2007-01-25 2013-11-19 Tini Alloy Company Sprinkler valve with active actuation
JP4455618B2 (en) * 2007-06-26 2010-04-21 株式会社東芝 Manufacturing method of semiconductor device
US7690254B2 (en) * 2007-07-26 2010-04-06 Honeywell International Inc. Sensor with position-independent drive electrodes in multi-layer silicon on insulator substrate
WO2009018289A2 (en) 2007-07-30 2009-02-05 Tini Alloy Company Method and devices for preventing restenosis in cardiovascular stents
WO2009073609A1 (en) 2007-11-30 2009-06-11 Tini Alloy Company Biocompatible copper-based single-crystal shape memory alloys
US8382917B2 (en) 2007-12-03 2013-02-26 Ormco Corporation Hyperelastic shape setting devices and fabrication methods
US7842143B2 (en) * 2007-12-03 2010-11-30 Tini Alloy Company Hyperelastic shape setting devices and fabrication methods
US8187902B2 (en) 2008-07-09 2012-05-29 The Charles Stark Draper Laboratory, Inc. High performance sensors and methods for forming the same
CN101447369B (en) * 2008-12-25 2011-11-09 北京大学 Manufacture method of Ti-based MEMS mechanical relay
US10124197B2 (en) 2012-08-31 2018-11-13 TiNi Allot Company Fire sprinkler valve actuator
US11040230B2 (en) 2012-08-31 2021-06-22 Tini Alloy Company Fire sprinkler valve actuator
KR101942967B1 (en) * 2012-12-12 2019-01-28 삼성전자주식회사 Bonded substrate structure using siloxane-based monomer and method of fabricating the same
US9837935B2 (en) * 2013-10-29 2017-12-05 Honeywell International Inc. All-silicon electrode capacitive transducer on a glass substrate
CN105645347B (en) * 2014-11-18 2017-08-08 无锡华润上华半导体有限公司 The localization method of bulk-micromachining
US9818637B2 (en) 2015-12-29 2017-11-14 Globalfoundries Inc. Device layer transfer with a preserved handle wafer section
US11056382B2 (en) * 2018-03-19 2021-07-06 Globalfoundries U.S. Inc. Cavity formation within and under semiconductor devices
CN115480387A (en) * 2022-09-26 2022-12-16 欧梯恩智能科技(苏州)有限公司 Tunable filter and method for manufacturing tunable filter

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4855544A (en) * 1988-09-01 1989-08-08 Honeywell Inc. Multiple level miniature electromechanical accelerometer switch
US5343064A (en) * 1988-03-18 1994-08-30 Spangler Leland J Fully integrated single-crystal silicon-on-insulator process, sensors and circuits
WO2000078667A1 (en) * 1999-06-24 2000-12-28 Honeywell Inc. Precisely defined microelectromechanical structures and associated fabrication methods

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4654663A (en) 1981-11-16 1987-03-31 Piezoelectric Technology Investors, Ltd. Angular rate sensor system
US5013681A (en) * 1989-09-29 1991-05-07 The United States Of America As Represented By The Secretary Of The Navy Method of producing a thin silicon-on-insulator layer
US5605598A (en) 1990-10-17 1997-02-25 The Charles Stark Draper Laboratory Inc. Monolithic micromechanical vibrating beam accelerometer with trimmable resonant frequency
GB9111316D0 (en) 1991-05-24 1991-07-17 Burdess James S Improvements in or relating to gyroscopic devices
US5313835A (en) 1991-12-19 1994-05-24 Motorola, Inc. Integrated monolithic gyroscopes/accelerometers with logic circuits
US5329815A (en) 1991-12-19 1994-07-19 Motorola, Inc. Vibration monolithic gyroscope
DE4331798B4 (en) * 1993-09-18 2004-08-26 Robert Bosch Gmbh Process for the production of micromechanical components
US5492596A (en) 1994-02-04 1996-02-20 The Charles Stark Draper Laboratory, Inc. Method of making a micromechanical silicon-on-glass tuning fork gyroscope
US5729038A (en) * 1995-12-15 1998-03-17 Harris Corporation Silicon-glass bonded wafers
US5646348A (en) 1994-08-29 1997-07-08 The Charles Stark Draper Laboratory, Inc. Micromechanical sensor with a guard band electrode and fabrication technique therefor
US5880368A (en) 1995-04-19 1999-03-09 Smiths Industries Public Limited Company Inertial sensors
KR100374803B1 (en) 1995-05-25 2003-05-12 삼성전자주식회사 Tuning Fork Gyroscopes
US5635640A (en) 1995-06-06 1997-06-03 Analog Devices, Inc. Micromachined device with rotationally vibrated masses
US5817942A (en) 1996-02-28 1998-10-06 The Charles Stark Draper Laboratory, Inc. Capacitive in-plane accelerometer
US5992233A (en) 1996-05-31 1999-11-30 The Regents Of The University Of California Micromachined Z-axis vibratory rate gyroscope
US5894090A (en) 1996-05-31 1999-04-13 California Institute Of Technology Silicon bulk micromachined, symmetric, degenerate vibratorygyroscope, accelerometer and sensor and method for using the same
US5866469A (en) * 1996-06-13 1999-02-02 Boeing North American, Inc. Method of anodic wafer bonding
US5914801A (en) 1996-09-27 1999-06-22 Mcnc Microelectromechanical devices including rotating plates and related methods
GB2320571B (en) 1996-12-20 2000-09-27 Aisin Seiki Semiconductor micromachine and manufacturing method thereof
JPH10185580A (en) 1996-12-27 1998-07-14 Canon Inc Gyro sensor
JPH112526A (en) 1997-06-13 1999-01-06 Mitsubishi Electric Corp Vibrating angular velocity sensor
WO1999019734A2 (en) 1997-10-14 1999-04-22 Irvine Sensors Corporation Multi-element micro gyro
FR2770899B1 (en) 1997-11-07 1999-12-10 Commissariat Energie Atomique VIBRATING MICROGYROMETER
JP3500063B2 (en) * 1998-04-23 2004-02-23 信越半導体株式会社 Method for recycling peeled wafer and silicon wafer for reuse
JP2000124092A (en) * 1998-10-16 2000-04-28 Shin Etsu Handotai Co Ltd Manufacture of soi wafer by hydrogen-ion implantation stripping method and soi wafer manufactured thereby

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5343064A (en) * 1988-03-18 1994-08-30 Spangler Leland J Fully integrated single-crystal silicon-on-insulator process, sensors and circuits
US4855544A (en) * 1988-09-01 1989-08-08 Honeywell Inc. Multiple level miniature electromechanical accelerometer switch
WO2000078667A1 (en) * 1999-06-24 2000-12-28 Honeywell Inc. Precisely defined microelectromechanical structures and associated fabrication methods

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
MOCHIDA Y ET AL: "A micromachined vibrating rate gyroscope with independent beams for the drive and detection modes", SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 80, no. 2, March 2000 (2000-03-01), pages 170 - 178, XP004192104, ISSN: 0924-4247 *
PUERS R ET AL: "Design and processing experiments of a new miniaturized capacitive triaxial accelerometer", SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 68, no. 1-3, 15 June 1998 (1998-06-15), pages 324 - 328, XP004139853, ISSN: 0924-4247 *
XIAO Z ET AL: "Silicon micro-accelerometer with mg resolution, high linearity and large frequency bandwidth fabricated with two mask bulk process", SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 77, no. 2, 12 October 1999 (1999-10-12), pages 113 - 119, XP004244553, ISSN: 0924-4247 *

Also Published As

Publication number Publication date
EP1345844B1 (en) 2009-11-04
EP1345844A2 (en) 2003-09-24
TW521060B (en) 2003-02-21
ATE447538T1 (en) 2009-11-15
US6582985B2 (en) 2003-06-24
US20020081821A1 (en) 2002-06-27
WO2002057180A2 (en) 2002-07-25
DE60140379D1 (en) 2009-12-17

Similar Documents

Publication Publication Date Title
WO2002057180A3 (en) Soi/glass process for forming thin silicon micromachined structures
CA2433738A1 (en) Method for microfabricating structures using silicon-on-insulator material
WO2000016041A3 (en) Formation of suspended beams using soi substrates, and application to the fabrication of a vibrating gyrometer
US6610582B1 (en) Field-assisted fusion bonding
EP1419990A3 (en) Method of forming a via hole through a glass wafer
EP0779650A3 (en) Fabrication process of SOI substrate
WO2002095800A3 (en) A method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
ATE511493T1 (en) METHOD FOR PRODUCING PRECISE MICROELECTROMECHANICAL STRUCTURES, AND MICROSTRUCTURES SO PRODUCED
WO2005017972A3 (en) Method for microfabricating structures using silicon-on-insulator material
WO2003044833A3 (en) Method for limiting divot formation in post shallow trench isolation processes
EP1139159A3 (en) Article comprising an optical cavity
EP1803684A3 (en) Vacuum packaged single crystal silicon resonator
WO2002082554A1 (en) Semiconductor device and method for manufacture thereof
WO2002003456A3 (en) Semiconductor device and method of formation
EP1433199B1 (en) Method for forming a cavity structure in an soi substrate and cavity structure formed in an soi substrate
EP1400488A3 (en) Fabrication of MEMS devices with spin-on glass
JPH0485827A (en) Manufacturing method of semiconductor device
WO2002041351A3 (en) Method of fabricating capillary discharge plasma display panel using combination of laser and wet etchings
WO2002051743A3 (en) Thin silicon micromachined structures
JP2000155030A (en) Manufacture of angular velocity sensor
EP1252028B1 (en) Method of fabricating a micro machined structure
CA2378725A1 (en) Merged-mask micro-machining process
EP1170603A3 (en) Method of fabricating silica microstructures
JPH11186566A (en) Manufacture of fine device
WO2004017371A3 (en) Method for microfabricating structures using silicon-on-insulator material

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AL AM AT AU AZ BA BB BG BR BY CA CH CN CR CU CZ DE DK DM EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
AK Designated states

Kind code of ref document: A3

Designated state(s): AE AL AM AT AU AZ BA BB BG BR BY CA CH CN CR CU CZ DE DK DM EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

WWE Wipo information: entry into national phase

Ref document number: 2001993334

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 2001993334

Country of ref document: EP

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载