+

WO2008067537A3 - Procédé et dispositif pour la croissance de couches épitaxiales de semi-conducteur aux nitrures-iii - Google Patents

Procédé et dispositif pour la croissance de couches épitaxiales de semi-conducteur aux nitrures-iii Download PDF

Info

Publication number
WO2008067537A3
WO2008067537A3 PCT/US2007/086096 US2007086096W WO2008067537A3 WO 2008067537 A3 WO2008067537 A3 WO 2008067537A3 US 2007086096 W US2007086096 W US 2007086096W WO 2008067537 A3 WO2008067537 A3 WO 2008067537A3
Authority
WO
WIPO (PCT)
Prior art keywords
mohvpe
hvpe
reaction chamber
substrate
iii
Prior art date
Application number
PCT/US2007/086096
Other languages
English (en)
Other versions
WO2008067537A2 (fr
Inventor
M Asif Khan
Qhalid Fareed
Jinwei Yang
Original Assignee
Univ South Carolina
M Asif Khan
Qhalid Fareed
Jinwei Yang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ South Carolina, M Asif Khan, Qhalid Fareed, Jinwei Yang filed Critical Univ South Carolina
Publication of WO2008067537A2 publication Critical patent/WO2008067537A2/fr
Publication of WO2008067537A3 publication Critical patent/WO2008067537A3/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention concerne un système général d'épitaxie en phase vapeur d'organométallique-hydrure (MOHVPE), ainsi que des procédés de formation de couches épitaxiales sur un substrat au moyen dudit système MOHVPE. Le système comprend une chambre réactionnelle, un gaz source d'azote, un système de type HVPE et un système de type MOCVD. La source de métal du système de type HVPE est située à l'extérieur de la chambre réactionnelle. Le système MOHVPE est particulièrement bien adapté pour être utilisé dans des dispositifs à base de nitrure, notamment des dispositifs à base de nitrures d'éléments du groupe III. Les procédés et systèmes de la présente invention combinent les avantages du dépôt chimique en phase vapeur de composés organométalliques (en anglais MOCVD), de l'épitaxie pulsée par couche atomique (en anglais PALE) et d'épitaxie en phase vapeur d'hydrure (en anglais HVPE), techniques bien connues, tout en en minimisant les inconvénients. Les deux techniques peuvent en outre être utilisées pour faire croître plusieurs couches sur le même substrat, sans retirer le substrat de la chambre réactionnelle.
PCT/US2007/086096 2006-11-30 2007-11-30 Procédé et dispositif pour la croissance de couches épitaxiales de semi-conducteur aux nitrures-iii WO2008067537A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US86188606P 2006-11-30 2006-11-30
US86182806P 2006-11-30 2006-11-30
US60/861,828 2006-11-30
US60/861,886 2006-11-30

Publications (2)

Publication Number Publication Date
WO2008067537A2 WO2008067537A2 (fr) 2008-06-05
WO2008067537A3 true WO2008067537A3 (fr) 2009-04-16

Family

ID=39468755

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/086096 WO2008067537A2 (fr) 2006-11-30 2007-11-30 Procédé et dispositif pour la croissance de couches épitaxiales de semi-conducteur aux nitrures-iii

Country Status (1)

Country Link
WO (1) WO2008067537A2 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8318562B2 (en) 2007-04-02 2012-11-27 University Of South Carolina Method to increase breakdown voltage of semiconductor devices
KR20110129444A (ko) 2009-03-02 2011-12-01 더 리전츠 오브 더 유니버시티 오브 캘리포니아 비극성 또는 반극성 (갈륨, 알루미늄, 인듐, 붕소)질소 기판들 상에 성장한 소자들
JP5931737B2 (ja) * 2010-10-29 2016-06-08 株式会社トクヤマ 光学素子の製造方法
WO2016209886A1 (fr) 2015-06-22 2016-12-29 University Of South Carolina Injecteur à système mocvd destiné à la croissance rapide de matériau alingabn
US20190112709A1 (en) * 2017-10-12 2019-04-18 Gelest Technologies, Inc. Methods and System for the Integrated Synthesis, Delivery, and Processing of Source Chemicals for Thin Film Manufacturing
US11823900B2 (en) 2018-10-10 2023-11-21 The Johns Hopkins University Method for printing wide bandgap semiconductor materials
US11056338B2 (en) 2018-10-10 2021-07-06 The Johns Hopkins University Method for printing wide bandgap semiconductor materials
CN109518164A (zh) * 2018-12-20 2019-03-26 北京北方华创微电子装备有限公司 原子层沉积设备及方法
CN114134572B (zh) * 2021-11-12 2024-06-21 中国电子科技集团公司第四十六研究所 一种hvpe法生长氮化铝的辅助加热体装置及方法
CN114318543A (zh) * 2021-12-28 2022-04-12 江苏布里其曼科技股份有限公司 半极性氮化镓外延层结构制造系统及方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6086673A (en) * 1998-04-02 2000-07-11 Massachusetts Institute Of Technology Process for producing high-quality III-V nitride substrates

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6086673A (en) * 1998-04-02 2000-07-11 Massachusetts Institute Of Technology Process for producing high-quality III-V nitride substrates

Also Published As

Publication number Publication date
WO2008067537A2 (fr) 2008-06-05

Similar Documents

Publication Publication Date Title
WO2008067537A3 (fr) Procédé et dispositif pour la croissance de couches épitaxiales de semi-conducteur aux nitrures-iii
US11658029B2 (en) Method of forming a device structure using selective deposition of gallium nitride and system for same
WO2010129183A3 (fr) Procédé fragmenté à une seule chambre mocvd pour fabrication de del
TW200703470A (en) Growth of planar non-polar {1-100} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD)
WO2008060349A3 (fr) Procédé pour une croissance hétéroépitaxiale de gan, inn, et ain à face n de haute qualité et pour leurs alliages par un dépôt chimique en phase vapeur organique de métal
WO2006093707A2 (fr) Procede de nucleation en une etape a temperature elevee destine a un substrat a desaccord de maille
WO2012162197A3 (fr) Procédés permettant une croissance améliorée de semi-conducteurs à base de nitrures d'éléments du groupe iii
WO2010009325A3 (fr) Croissance de nitrure de gallium planaire non polaire {1-1 0 0} sur le plan m et semi-polaire {1 1-2 2} avec épitaxie en phase vapeur par méthode aux hydrures (hvpe)
TW200644051A (en) Method for growth of gan single crystal, method for preparation of gan substrate, process for producing gan-based element, and gan-based element
WO2011123291A3 (fr) Formation d'une structure de nitrure composé qui inclut une couche de nucléation
TW200802958A (en) Group III-nitride semiconductor thin film, method for fabricating the same, and group III-nitride semiconductor light emitting device
JP6406811B2 (ja) Ｉｉｉ 族窒化物半導体装置の製造装置および製造方法ならびに半導体ウエハの製造方法
HK1112268A1 (en) Method for producing gan or algan crystals
TW200723369A (en) Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition
CN100524621C (zh) 晶态氮化镓基化合物的生长方法以及包含氮化镓基化合物的半导体器件
TW201614083A (en) Method for forming nitride semiconductor layer and method for manufacturing semiconductor device
WO2013078136A4 (fr) Substrat semi-conducteur et procédé de formation
GB0219728D0 (en) MBE growth of an algan layer or algan multilayer structure
JP2016134610A (ja) Ｉｉｉ族窒化物半導体素子とその製造方法
CN101397693B (zh) 一种生长高质量单晶氮化铟薄膜的方法
Lee et al. Effect of buffer layer on the growth of GaN on Si substrate
EP3556912B1 (fr) Substrat semi-conducteur au nitrure du groupe iii et procédé de fabrication de substrat semi-conducteur au nitrure du groupe iii
JP7066178B2 (ja) Ｉｉｉ族窒化物半導体素子の製造装置および製造方法ならびに半導体ウエハの製造方法
JP2015168594A (ja) 窒化物半導体の成長方法
WO2005041269A3 (fr) Croissance epitaxiale laterale sans masque de nitrure d'aluminium et de nitrure de gallium et d'aluminium a teneur elevee en aluminium

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07865003

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07865003

Country of ref document: EP

Kind code of ref document: A2

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载