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WO2007036164A8 - Dispositif electroluminescent a semi-conducteur et son procede de fabrication - Google Patents

Dispositif electroluminescent a semi-conducteur et son procede de fabrication

Info

Publication number
WO2007036164A8
WO2007036164A8 PCT/CN2006/002584 CN2006002584W WO2007036164A8 WO 2007036164 A8 WO2007036164 A8 WO 2007036164A8 CN 2006002584 W CN2006002584 W CN 2006002584W WO 2007036164 A8 WO2007036164 A8 WO 2007036164A8
Authority
WO
WIPO (PCT)
Prior art keywords
ohmic
layer
emitting device
semiconductor light
contact layer
Prior art date
Application number
PCT/CN2006/002584
Other languages
English (en)
Other versions
WO2007036164A1 (fr
Inventor
Fengyi Jiang
Li Wang
Wenqing Fang
Original Assignee
Lattice Power Jiangxi Corp
Fengyi Jiang
Li Wang
Wenqing Fang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lattice Power Jiangxi Corp, Fengyi Jiang, Li Wang, Wenqing Fang filed Critical Lattice Power Jiangxi Corp
Priority to JP2008532572A priority Critical patent/JP2009510730A/ja
Priority to US12/063,978 priority patent/US7919784B2/en
Priority to EP06791170.1A priority patent/EP1929545A4/fr
Publication of WO2007036164A1 publication Critical patent/WO2007036164A1/fr
Publication of WO2007036164A8 publication Critical patent/WO2007036164A8/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape

Landscapes

  • Led Devices (AREA)

Abstract

Dans un mode de réalisation, on prévoit un dispositif électroluminescent à semi-conducteur comprenant une couche de protection supérieure; une couche de protection inférieure; une couche active entre les couches supérieure et inférieure; une couche à contact ohmique supérieure formant un chemin conducteur en direction de la couche supérieure et une couche de contact ohmique inférieure formant un chemin conducteur vers la couche inférieure. La couche de contact ohmique inférieure présente une forme sensiblement différente de celle de la couche de contact ohmique supérieure, déviant de ce fait l'écoulement d'une partie de la couche active sensiblement sous la couche de contact ohmique supérieure lorsqu'une tension est appliquée sur les couches de contact ohmique supérieure et inférieure.
PCT/CN2006/002584 2005-09-30 2006-09-29 Dispositif electroluminescent a semi-conducteur et son procede de fabrication WO2007036164A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008532572A JP2009510730A (ja) 2005-09-30 2006-09-29 半導体発光デバイスおよびその製造方法
US12/063,978 US7919784B2 (en) 2005-09-30 2006-09-29 Semiconductor light-emitting device and method for making same
EP06791170.1A EP1929545A4 (fr) 2005-09-30 2006-09-29 Dispositif electroluminescent a semi-conducteur et son procede de fabrication

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200510030321.7 2005-09-30
CNB2005100303217A CN100388515C (zh) 2005-09-30 2005-09-30 半导体发光器件及其制造方法

Publications (2)

Publication Number Publication Date
WO2007036164A1 WO2007036164A1 (fr) 2007-04-05
WO2007036164A8 true WO2007036164A8 (fr) 2007-07-19

Family

ID=36751610

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2006/002584 WO2007036164A1 (fr) 2005-09-30 2006-09-29 Dispositif electroluminescent a semi-conducteur et son procede de fabrication

Country Status (5)

Country Link
EP (1) EP1929545A4 (fr)
JP (1) JP2009510730A (fr)
KR (1) KR20080049724A (fr)
CN (1) CN100388515C (fr)
WO (1) WO2007036164A1 (fr)

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KR20110006652A (ko) * 2008-03-25 2011-01-20 라티스 파워(지앙시) 코포레이션 양면 패시베이션을 갖는 반도체 발광 소자
EP2259346B1 (fr) * 2008-03-27 2019-07-03 LG Innotek Co., Ltd. Élément électroluminescent et procédé de production correspondant
US8502193B2 (en) * 2008-04-16 2013-08-06 Lg Innotek Co., Ltd. Light-emitting device and fabricating method thereof
JP4871967B2 (ja) * 2009-02-10 2012-02-08 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子およびその製造方法
JP4583487B2 (ja) 2009-02-10 2010-11-17 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子およびその製造方法
KR100999726B1 (ko) 2009-05-04 2010-12-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR101154750B1 (ko) * 2009-09-10 2012-06-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR100986407B1 (ko) * 2009-10-22 2010-10-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR101007077B1 (ko) * 2009-11-06 2011-01-10 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 그 제조방법
JP5733594B2 (ja) * 2010-02-18 2015-06-10 スタンレー電気株式会社 半導体発光装置
KR101014071B1 (ko) * 2010-04-15 2011-02-10 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템
KR101039609B1 (ko) * 2010-05-24 2011-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지
US8502244B2 (en) 2010-08-31 2013-08-06 Micron Technology, Inc. Solid state lighting devices with current routing and associated methods of manufacturing
CN101997070A (zh) * 2010-09-10 2011-03-30 北京工业大学 一种高反射低电压的倒装发光二极管及其制备方法
JP2012253304A (ja) * 2011-06-07 2012-12-20 Toshiba Corp 窒化物半導体発光素子の製造方法
JP2013026451A (ja) 2011-07-21 2013-02-04 Stanley Electric Co Ltd 半導体発光素子
WO2013068878A1 (fr) * 2011-11-07 2013-05-16 Koninklijke Philips Electronics N.V. Contact de type p amélioré avec injection plus uniforme et pertes optiques réduites
KR101220419B1 (ko) * 2012-04-27 2013-01-21 한국광기술원 수직 구조 발광 다이오드
JP6185786B2 (ja) * 2012-11-29 2017-08-23 スタンレー電気株式会社 発光素子
JP6190591B2 (ja) * 2013-01-15 2017-08-30 スタンレー電気株式会社 半導体発光素子
CN103456864B (zh) * 2013-08-29 2016-01-27 刘晶 一种发光二极管芯片的制作方法、芯片及发光二极管
CN110993756B (zh) * 2019-12-18 2022-12-06 东莞市中晶半导体科技有限公司 Led芯片及其制作方法
JPWO2024043316A1 (fr) * 2022-08-25 2024-02-29

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JP2792781B2 (ja) * 1992-03-03 1998-09-03 シャープ株式会社 発光ダイオード及びその製造方法
JPH0697498A (ja) * 1992-09-17 1994-04-08 Toshiba Corp 半導体発光素子
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JPH07273368A (ja) * 1994-03-29 1995-10-20 Nec Kansai Ltd 発光ダイオード
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JPH08335717A (ja) * 1995-06-06 1996-12-17 Rohm Co Ltd 半導体発光素子
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KR20050051920A (ko) * 2003-11-28 2005-06-02 삼성전자주식회사 플립칩형 질화물계 발광소자 및 그 제조방법
CN1641893A (zh) * 2004-01-02 2005-07-20 炬鑫科技股份有限公司 一种氮化镓系发光二极管结构及其制造方法
JP2005277372A (ja) * 2004-02-25 2005-10-06 Sanken Electric Co Ltd 半導体発光素子及びその製造方法

Also Published As

Publication number Publication date
CN1770486A (zh) 2006-05-10
EP1929545A1 (fr) 2008-06-11
WO2007036164A1 (fr) 2007-04-05
KR20080049724A (ko) 2008-06-04
JP2009510730A (ja) 2009-03-12
EP1929545A4 (fr) 2014-03-05
CN100388515C (zh) 2008-05-14

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