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WO2007036164A8 - Semiconductor light-emitting device and method for making same - Google Patents

Semiconductor light-emitting device and method for making same

Info

Publication number
WO2007036164A8
WO2007036164A8 PCT/CN2006/002584 CN2006002584W WO2007036164A8 WO 2007036164 A8 WO2007036164 A8 WO 2007036164A8 CN 2006002584 W CN2006002584 W CN 2006002584W WO 2007036164 A8 WO2007036164 A8 WO 2007036164A8
Authority
WO
WIPO (PCT)
Prior art keywords
ohmic
layer
emitting device
semiconductor light
contact layer
Prior art date
Application number
PCT/CN2006/002584
Other languages
French (fr)
Other versions
WO2007036164A1 (en
Inventor
Fengyi Jiang
Li Wang
Wenqing Fang
Original Assignee
Lattice Power Jiangxi Corp
Fengyi Jiang
Li Wang
Wenqing Fang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lattice Power Jiangxi Corp, Fengyi Jiang, Li Wang, Wenqing Fang filed Critical Lattice Power Jiangxi Corp
Priority to US12/063,978 priority Critical patent/US7919784B2/en
Priority to EP06791170.1A priority patent/EP1929545A4/en
Priority to JP2008532572A priority patent/JP2009510730A/en
Publication of WO2007036164A1 publication Critical patent/WO2007036164A1/en
Publication of WO2007036164A8 publication Critical patent/WO2007036164A8/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape

Landscapes

  • Led Devices (AREA)

Abstract

One embodiment of the present invention provides a semiconductor light-emitting device, which comprises: an upper cladding layer; a lower cladding layer; an active layer between the upper and lower cladding layers; an upper ohmic-contact layer forming a conductive path to the upper cladding layer; and a lower ohmic-contact layer forming a conductive path the lower cladding layer. The lower ohmic-contact layer has a shape substantially different from the shape of the upper ohmic-contact layer, thereby diverting a carrier flow away from a portion of the active layer which is substantially below the upper ohmic-contact layer when a voltage is applied to the upper and lower ohmic-contact layers.
PCT/CN2006/002584 2005-09-30 2006-09-29 Semiconductor light-emitting device and method for making same WO2007036164A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/063,978 US7919784B2 (en) 2005-09-30 2006-09-29 Semiconductor light-emitting device and method for making same
EP06791170.1A EP1929545A4 (en) 2005-09-30 2006-09-29 SEMICONDUCTOR ELECTROLUMINESCENT DEVICE AND METHOD FOR MANUFACTURING THE SAME
JP2008532572A JP2009510730A (en) 2005-09-30 2006-09-29 Semiconductor light emitting device and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200510030321.7 2005-09-30
CNB2005100303217A CN100388515C (en) 2005-09-30 2005-09-30 Semiconductor light emitting device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
WO2007036164A1 WO2007036164A1 (en) 2007-04-05
WO2007036164A8 true WO2007036164A8 (en) 2007-07-19

Family

ID=36751610

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2006/002584 WO2007036164A1 (en) 2005-09-30 2006-09-29 Semiconductor light-emitting device and method for making same

Country Status (5)

Country Link
EP (1) EP1929545A4 (en)
JP (1) JP2009510730A (en)
KR (1) KR20080049724A (en)
CN (1) CN100388515C (en)
WO (1) WO2007036164A1 (en)

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KR101007077B1 (en) * 2009-11-06 2011-01-10 엘지이노텍 주식회사 Light emitting device, light emitting device package and manufacturing method thereof
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KR101014071B1 (en) * 2010-04-15 2011-02-10 엘지이노텍 주식회사 Light emitting device, light emitting device manufacturing method, light emitting device package and lighting system
KR101039609B1 (en) * 2010-05-24 2011-06-09 엘지이노텍 주식회사 Light emitting device, manufacturing method and light emitting device package
US8502244B2 (en) 2010-08-31 2013-08-06 Micron Technology, Inc. Solid state lighting devices with current routing and associated methods of manufacturing
CN101997070A (en) * 2010-09-10 2011-03-30 北京工业大学 High-reflection low-voltage inverted light-emitting diode and preparation method thereof
JP2012253304A (en) * 2011-06-07 2012-12-20 Toshiba Corp Method of manufacturing nitride semiconductor light-emitting element
JP2013026451A (en) 2011-07-21 2013-02-04 Stanley Electric Co Ltd Semiconductor light-emitting device
US9312437B2 (en) * 2011-11-07 2016-04-12 Koninklijke Philips N.V. P-contact with more uniform injection and lower optical loss
KR101220419B1 (en) * 2012-04-27 2013-01-21 한국광기술원 Vertical light emitting diode
JP6185786B2 (en) * 2012-11-29 2017-08-23 スタンレー電気株式会社 Light emitting element
JP6190591B2 (en) * 2013-01-15 2017-08-30 スタンレー電気株式会社 Semiconductor light emitting device
CN103456864B (en) * 2013-08-29 2016-01-27 刘晶 A kind of manufacture method of light-emitting diode chip for backlight unit, chip and light-emitting diode
CN110993756B (en) * 2019-12-18 2022-12-06 东莞市中晶半导体科技有限公司 LED chip and manufacturing method thereof
CN119836718A (en) * 2022-08-25 2025-04-15 国立大学法人京都大学 Two-dimensional photonic crystal laser

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Also Published As

Publication number Publication date
JP2009510730A (en) 2009-03-12
WO2007036164A1 (en) 2007-04-05
CN100388515C (en) 2008-05-14
EP1929545A1 (en) 2008-06-11
KR20080049724A (en) 2008-06-04
EP1929545A4 (en) 2014-03-05
CN1770486A (en) 2006-05-10

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