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WO2006018784A3 - High accuracy power detector for handset applications - Google Patents

High accuracy power detector for handset applications Download PDF

Info

Publication number
WO2006018784A3
WO2006018784A3 PCT/IB2005/052631 IB2005052631W WO2006018784A3 WO 2006018784 A3 WO2006018784 A3 WO 2006018784A3 IB 2005052631 W IB2005052631 W IB 2005052631W WO 2006018784 A3 WO2006018784 A3 WO 2006018784A3
Authority
WO
WIPO (PCT)
Prior art keywords
amplifier
transistors
output
amplifier transistors
sensing transistor
Prior art date
Application number
PCT/IB2005/052631
Other languages
French (fr)
Other versions
WO2006018784A2 (en
Inventor
Dmitry P Prikhodko
John J Hug
Rob M Heeres
Ronald Koster
Original Assignee
Koninkl Philips Electronics Nv
Dmitry P Prikhodko
John J Hug
Rob M Heeres
Ronald Koster
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Dmitry P Prikhodko, John J Hug, Rob M Heeres, Ronald Koster filed Critical Koninkl Philips Electronics Nv
Publication of WO2006018784A2 publication Critical patent/WO2006018784A2/en
Publication of WO2006018784A3 publication Critical patent/WO2006018784A3/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/465—Power sensing

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)

Abstract

An output power of an RF power amplifier PA having amplifier transistors having coupled outputs, is sensed by a power detection circuit having a sensing transistor B having a common input circuit with one or more of the amplifier transistors A. By sharing a common input circuit, any changes in the output load on the PA influences the output of not only the PA transistors, but also the output of the sensing transistor. This can help overcome electrical mismatch and keep the sensing transistor is in saturation when the amplifier transistors are in saturation. A common base connection can mean collector currents of the sensing and amplifier transistors are forced to be close. Accuracy can be further increased by locating the detection circuit centrally in a row of amplifier transistors and having feed resistor and feed capacitor matched in shape to corresponding components of the amplifier.
PCT/IB2005/052631 2004-08-16 2005-08-08 High accuracy power detector for handset applications WO2006018784A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04103921.5 2004-08-16
EP04103921 2004-08-16

Publications (2)

Publication Number Publication Date
WO2006018784A2 WO2006018784A2 (en) 2006-02-23
WO2006018784A3 true WO2006018784A3 (en) 2006-04-27

Family

ID=35637349

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2005/052631 WO2006018784A2 (en) 2004-08-16 2005-08-08 High accuracy power detector for handset applications

Country Status (1)

Country Link
WO (1) WO2006018784A2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030054778A1 (en) * 2001-09-14 2003-03-20 Hecht James Burr Amplifier power detection circuitry
US20040061557A1 (en) * 2002-09-03 2004-04-01 Triquint Semiconductor, Inc. Amplifier power control circuit
US20040113699A1 (en) * 2002-12-12 2004-06-17 Renesas Technology Corp. Radio frequency power amplifier and communication system

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030054778A1 (en) * 2001-09-14 2003-03-20 Hecht James Burr Amplifier power detection circuitry
US20040061557A1 (en) * 2002-09-03 2004-04-01 Triquint Semiconductor, Inc. Amplifier power control circuit
US20040113699A1 (en) * 2002-12-12 2004-06-17 Renesas Technology Corp. Radio frequency power amplifier and communication system

Also Published As

Publication number Publication date
WO2006018784A2 (en) 2006-02-23

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