+

WO2006018784A3 - High accuracy power detector for handset applications - Google Patents

High accuracy power detector for handset applications Download PDF

Info

Publication number
WO2006018784A3
WO2006018784A3 PCT/IB2005/052631 IB2005052631W WO2006018784A3 WO 2006018784 A3 WO2006018784 A3 WO 2006018784A3 IB 2005052631 W IB2005052631 W IB 2005052631W WO 2006018784 A3 WO2006018784 A3 WO 2006018784A3
Authority
WO
WIPO (PCT)
Prior art keywords
amplifier
transistors
output
amplifier transistors
sensing transistor
Prior art date
Application number
PCT/IB2005/052631
Other languages
French (fr)
Other versions
WO2006018784A2 (en
Inventor
Dmitry P Prikhodko
John J Hug
Rob M Heeres
Ronald Koster
Original Assignee
Koninkl Philips Electronics Nv
Dmitry P Prikhodko
John J Hug
Rob M Heeres
Ronald Koster
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Dmitry P Prikhodko, John J Hug, Rob M Heeres, Ronald Koster filed Critical Koninkl Philips Electronics Nv
Publication of WO2006018784A2 publication Critical patent/WO2006018784A2/en
Publication of WO2006018784A3 publication Critical patent/WO2006018784A3/en

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G3/00Gain control in amplifiers or frequency changers
    • H03G3/20Automatic control
    • H03G3/30Automatic control in amplifiers having semiconductor devices
    • H03G3/3036Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/372Noise reduction and elimination in amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/465Power sensing

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)

Abstract

An output power of an RF power amplifier PA having amplifier transistors having coupled outputs, is sensed by a power detection circuit having a sensing transistor B having a common input circuit with one or more of the amplifier transistors A. By sharing a common input circuit, any changes in the output load on the PA influences the output of not only the PA transistors, but also the output of the sensing transistor. This can help overcome electrical mismatch and keep the sensing transistor is in saturation when the amplifier transistors are in saturation. A common base connection can mean collector currents of the sensing and amplifier transistors are forced to be close. Accuracy can be further increased by locating the detection circuit centrally in a row of amplifier transistors and having feed resistor and feed capacitor matched in shape to corresponding components of the amplifier.
PCT/IB2005/052631 2004-08-16 2005-08-08 High accuracy power detector for handset applications WO2006018784A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04103921.5 2004-08-16
EP04103921 2004-08-16

Publications (2)

Publication Number Publication Date
WO2006018784A2 WO2006018784A2 (en) 2006-02-23
WO2006018784A3 true WO2006018784A3 (en) 2006-04-27

Family

ID=35637349

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2005/052631 WO2006018784A2 (en) 2004-08-16 2005-08-08 High accuracy power detector for handset applications

Country Status (1)

Country Link
WO (1) WO2006018784A2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030054778A1 (en) * 2001-09-14 2003-03-20 Hecht James Burr Amplifier power detection circuitry
US20040061557A1 (en) * 2002-09-03 2004-04-01 Triquint Semiconductor, Inc. Amplifier power control circuit
US20040113699A1 (en) * 2002-12-12 2004-06-17 Renesas Technology Corp. Radio frequency power amplifier and communication system

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030054778A1 (en) * 2001-09-14 2003-03-20 Hecht James Burr Amplifier power detection circuitry
US20040061557A1 (en) * 2002-09-03 2004-04-01 Triquint Semiconductor, Inc. Amplifier power control circuit
US20040113699A1 (en) * 2002-12-12 2004-06-17 Renesas Technology Corp. Radio frequency power amplifier and communication system

Also Published As

Publication number Publication date
WO2006018784A2 (en) 2006-02-23

Similar Documents

Publication Publication Date Title
TW200609703A (en) Regulator circuit capable of detecting variations in voltage
JP2008167017A5 (en)
ATE328350T1 (en) MEMORY READING AMPLIFIER WITH AT LEAST TWO SPECIFIC RESISTORS
WO2010001077A3 (en) Circuit for amplifying a signal representing a variation in resistance of a variable resistance and corresponding capacitor
EP1808960A3 (en) Reduced-size sensor circuit
WO2008088732A3 (en) Temperature sensing system
WO2009023703A3 (en) Auto bias microphone system for use with multiple loads and method of forming same
CN101876671A (en) High-precision current sampling circuit used in servo system
US10914618B2 (en) Readout circuit for sensor and readout method thereof
WO2008143174A1 (en) Wide-range low-noise amplifier
WO2008089159A3 (en) Sense amplifier with stages to reduce capacitance mismatch in current mirror load
WO2007016266A3 (en) Low capacitance transient voltage suppressor
WO2008084593A1 (en) Voltage detector for storage element
TW201824738A (en) Amplifier device
WO2005017956A3 (en) Temperature-insensitive bias circuit for high-power amplifiers
CN211783939U (en) Simulation front end of high-precision temperature detection chip
WO2006112719A3 (en) Current mode multiplier based on square root voltage-current relationship of mos transtistor
WO2006018784A3 (en) High accuracy power detector for handset applications
US10001413B2 (en) Temperature sensing circuits
US20140117954A1 (en) Power supply circuit
US8564265B2 (en) Driving circuit
CN102236047A (en) Power detection circuit and electronic circuit for measuring output power of amplification circuit
WO2008111183A1 (en) Demodulation circuit
CN210377197U (en) Low-temperature floating band gap reference voltage source circuit
CN203178843U (en) Temperature compensation system

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU LV MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase
点击 这是indexloc提供的php浏览器服务,不要输入任何密码和下载