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WO2006018784A2 - Detecteur de puissance haute precision pour applications a des combines - Google Patents

Detecteur de puissance haute precision pour applications a des combines Download PDF

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Publication number
WO2006018784A2
WO2006018784A2 PCT/IB2005/052631 IB2005052631W WO2006018784A2 WO 2006018784 A2 WO2006018784 A2 WO 2006018784A2 IB 2005052631 W IB2005052631 W IB 2005052631W WO 2006018784 A2 WO2006018784 A2 WO 2006018784A2
Authority
WO
WIPO (PCT)
Prior art keywords
power
detection circuit
amplifier
output
transistors
Prior art date
Application number
PCT/IB2005/052631
Other languages
English (en)
Other versions
WO2006018784A3 (fr
Inventor
Dmitry P. Prikhodko
John J. Hug
Rob M. Heeres
Ronald Koster
Original Assignee
Koninklijke Philips Electronics N.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics N.V. filed Critical Koninklijke Philips Electronics N.V.
Publication of WO2006018784A2 publication Critical patent/WO2006018784A2/fr
Publication of WO2006018784A3 publication Critical patent/WO2006018784A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/465—Power sensing

Definitions

  • This invention relates to power detectors, to power amplifiers having such detectors, and to mobile wireless devices having such power amplifiers, to integrated circuits for the same, to methods of producing RP signals, and to methods of operating communications services over such devices.
  • Power amplifiers are frequently used in high-frequency RF amplifiers, such as those used in wireless communications apparatus, as well as in audio amplifiers and other applications. In such amplifiers, particularly when used in RP applications, it is desirable to provide an indication of the power in the output stage.
  • Mobile terminals such as wireless telephones, generally require that a specified radio frequency (RP) output power be delivered to a radiating antenna. Further, many such systems are required to control the transmitted power to achieve a specific level depending upon signal strength.
  • RP radio frequency
  • system architectures generally incorporate a closed-loop power control scheme.
  • the signal indicating the detected output of the power amplifier is sent to control circuitry.
  • the control circuitry generates a control signal that adjusts the output power of the amplifier until it is within the specified power level.
  • Detecting amplifier power output is typically accomplished by one of two techniques.
  • a directional coupler or voltage divider may be provided at the output of the power amplifier to sense a fraction of the signal applied to the load, and this sample signal is then used to indicate the power in the load.
  • Such sampling of the output power is disadvantageous in that it can increase the insertion loss between the output of the power amplifier and the radiating antenna. This can increase the required output power from the power amplifier and reduce battery life, which in turn reduces talk and standby time of the mobile terminal.
  • directional couplers are bulky and lossy, and resistive dividers are inefficient.
  • a second known technique involves using a resistor in series with the supply line to the PA.
  • DC collector current drawn by the PA is proportional, in reduced conduction angle modes, to PA output power.
  • the disadvantage here is the power loss associated with having a resistor in series with the supply.
  • WO 2004/023648 shows using multiple sense transistors with a combined output.
  • a power amplifier control loop includes various error amplifiers in the feedback loop.
  • the sensing transistors are located close to the amplifying transistors to reduce temperature differences.
  • Using multiple sense transistors has the disadvantage of unnecessary complexity, particularly in the layout, and unnecessary current draw that can have a negative impact on power dissipation and efficiency.
  • a detection circuit for sensing an output power of a power amplifier means (PAM), the power amplifier means having one or more transistors having coupled outputs, each of the amplifier transistors having an input circuit, the power detection circuit comprising a sensing transistor having a common input circuit with one or more of the amplifier transistors.
  • the amplifier means can be a single amplifier or a module of circuits which make up an amplifier.
  • the power sensing circuit may, or may not, also include an additional DC sensing transistor, having a base connection to the bias that is similar with that of the other transistors, but no connection to the RF input, for the purpose of subtraction from the main detector signal, increasing the total accuracy of the RF signal detection and allowing operation in the linear mode.
  • any changes in the output load on the PAM influences the output of not only the PA transistors, but also the output of the sensing transistor.
  • This can help overcome electrical mismatch problems generally, and in particular can assure that the sensing transistor is in saturation when the power amplifier transistors are in saturation.
  • the output power can be sensed more accurately without great loss in efficiency.
  • This can enable the output power to be controlled more accurately, even under conditions of changing output impedance caused by mismatch between antenna and environment, such as occurs when a user of a mobile phone is moving.
  • This in turn can enable wireless connections to be maintained more consistently, with lower average transmitted power, and thus battery life can be extended for example.
  • There can of course be multiple sense transistors with a combined output.
  • the common input circuit can be arranged as a common base or common gate connection. This can mean collector (or drain) currents of the sensing and amplifier transistors are forced to be close to one another in value. Thus, the load presented to the PAM influences the current waveform at the collector of the sensing transistor.
  • the sensing transistor is a scaled down version of the amplifier transistors, i.e. it has a lower chip area. This can enable the influence of PAM load changes to be increased, compared to the effect of sensing transistor load changes.
  • the common input circuit may comprise a feed capacitor and a bias feed resistor. These can be dimensioned to take account of them being shared by two or more transistors, so as to maintain similar characteristics to any other amplifier transistors which are not sharing their input circuit, if desired.
  • the sensing transistor is located on a substrate between transistors of the power amplifier means. This can reduce inaccuracies from susceptibility to temperature changes or parasitic currents for example.
  • the detection circuit has components which have a shape to match corresponding components of the power amplifier means.
  • the power amplifier means is an RF amplifier and the detection circuit is arranged to detect RF output power.
  • Another aspect of the invention provides a detection circuit for sensing an output power of a power amplifier means, the detection circuit having a sensing transistor coupled to share an input and supply lines of the power amplifier means, and a second transistor coupled between an output of the power amplifier means and an input of the sensing transistor, so that amplifier means output load changes affect an output of the sensing transistor.
  • the amplifier means can be one or more power amplifiers, e.g. in a module providing power amplification.
  • the second transistor need not be a power amplifying transistor to gain the advantage of reduced load dependence.
  • the power detector can be embodied with at least two transistors, the collector (or gate) of one thereof is connected to the RF output signal.
  • Another aspect of the invention provides a power amplifier means having a network of at least two amplifier transistors having outputs coupled together, and a detection circuit for sensing an output power of a power amplifier means, the detection circuit comprising a sensing transistor sharing the same substrate with the amplifier transistors, and being located between the two of the amplifier transistors, and the detection circuit having components matched in shape to corresponding components of the power amplifier means.
  • All connections leading to and from the power detector "block” are preferably of identical form to those for the RF transistors (i.e. same metal layers, etc.). This can enable accuracy to be improved by reducing mismatch between the sensing transistor and the amplifier transistor. In particular, locating the sensing transistor in between the amplifier transistors can reduce temperature differences. Matching shapes can reduce unwanted parasitic differences. Having identical connections to the inputs and outputs further reduce unwanted parasitics and ensure that the load impedance seen by the detector transistor is identical to that seen by the RF devices.
  • Another aspect of the invention provides an integrated circuit having such a detection circuit.
  • Another aspect provides a mobile device having a wireless communication circuit, having an RF power amplifier means arranged to be controlled according to a power detection signal generated by such a power detection circuit.
  • the detector can be composed of (at least) two transistors, of which one is connected (with collector or drain) to the RF output of the power amplifier means. They can offer a solution in particular for electrical mismatch between the power amplifier means and the power detector. Preferably, but not essentially, the power detector can be centrally located within a PA cell. This can also minimize mismatch of temperature and parasitics.
  • Fig. 1 shows a wireless device having a power amplifier
  • Fig. 2 shows a known power amplifier having a detection circuit
  • Fig. 3 shows a power amplifier having a detection circuit according to an embodiment
  • Figs. 4 and 5 show examples of output circuits for coupling to an output of a sensing transistor of a detection circuit
  • Fig. 6 shows a layout of a power amplifier with a conventional placement of the detection circuit
  • Figs. 7 and 8 show a layout of a power amplifier according to another embodiment of the invention.
  • power amplifier in accordance with the present invention should be construed broadly. It not only includes a single power amplifier but also a group of amplifiers, e.g. in the form of a module.
  • Embodiments of the present invention may be incorporated in a mobile terminal 20, such as a mobile telephone, wireless personal digital assistant, or like communication device.
  • the basic architecture of a mobile terminal 20 is represented in Fig. 1 and may include a receiver front end 22, a radio frequency transmitter section 24, an antenna 26, a duplexer or switch 28, a baseband processor 30, a control system 32, a frequency synthesizer 34, and an interface 36.
  • the receiver front end 22 receives information bearing radio frequency signals from one or more remote transmitters provided by a base station.
  • a low noise amplifier 38 amplifies the signal.
  • a filter circuit 40 minimizes broadband interference in the received signal, while downconversion and digitization circuitry 42 downconverts the filtered, received signal to an intermediate or baseband frequency signal, which is then digitized into one or more digital streams.
  • the receiver front end 22 typically uses one or more mixing frequencies generated by the frequency synthesizer 34.
  • the baseband processor 30 processes the digitized received signal to extract the information or data bits conveyed in the received signal. This processing typically comprises demodulation, decoding, and error correction operations. As such, the baseband processor 30 is generally implemented in one or more digital signal processors (DSPs). On the transmit side, the baseband processor 30 receives digitized data, which may represent voice, data, or control information, from the control system 32, which it encodes for transmission. The encoded data is output to the transmitter 24, where it is used by a modulator 44 to modulate a carrier signal that is at a desired transmit frequency. Power amplifier circuitry 46 amplifies the modulated carrier signal to a level appropriate for transmission, and delivers the modulated carrier signal to antenna 26 through a matching network 48.
  • DSPs digital signal processors
  • a user may interact with the mobile terminal 20 via the interface 36, which may include interface circuitry 50 associated with a microphone 52, a speaker 54, a keypad 56, and a display 58.
  • the interface circuitry 50 typically includes analog-to-digital converters, digital-to-analog converters, amplifiers, and the like. Additionally, it may include a voice encoder/decoder, in which case it may communicate directly with the baseband processor 30.
  • the microphone 52 will typically convert audio input, such as the user's voice, into an electrical signal, which is then digitized and passed directly or indirectly to the baseband processor 30. Audio information encoded in the received signal is recovered by the baseband processor 30, and converted by the interface circuitry 50 into an analog signal suitable for driving speaker 54.
  • the keypad 56 and display 58 enable the user to interact with the mobile terminal 20, input numbers to be dialed, address book information, or the like, as well as monitor call progress information.
  • the embodiments of the present invention can provide a more efficient or effective way to detect the transmit power provided by the power amplifier circuitry 46.
  • a signal indicative of transmit power referred to as power sense (POWER SENSE) 60
  • POWER SENSE power sense
  • Fig. 2 amplifier circuitry with conventional sensing It is known to implement the amplifier 46 with detector circuitry using the topology shown in Fig. 2. In this case the detector circuitry includes a scaled version of one cell of the PA itself is used to generate a scaled version of the RF output current waveform.
  • the amplifier has a transistor network including N devices or cells, each represented by a single transistor A, a bias resistor Rb, and coupling capacitor Cb.
  • a bias network 100 is configured to deliver bias through the bias resistor Rb to the base of each transistor.
  • the radio frequency (RF) input to the amplifier is coupled to the base of each transistor through capacitor Cb.
  • the transistor network will amplify the RF drive in light of the bias provided by the bias network to create an output signal, the combination of outputs of all the cells, which is output through a matching network 110 or 48, typically a network of capacitors and resistors, to the antenna.
  • the transistor network is typically coupled to a voltage source (VCC) through inductor (not shown).
  • VCC voltage source
  • the detector circuitry block 120 can be implemented in various ways. Two possible implementations of this block are shown in Figs. 4 and 5 described in more detail below (which are derived from US6307364B1 and WO03/026333A1 respectively).
  • Fig. 4 depicts one of the simplest implementations, while that in Fig. 5 depicts a more complicated implementation that has the advantage of true RF signal rectification at the collector of the PS device (generating, in principle, a more accurate representation of the output power of the PA).
  • the power output capability of transistor B of the detector is proportionally less than that of the transistors of the amplifier.
  • the emitter area associated with transistor B relates to the total emitter area of the amplifier transistor network A by a scaling ratio R. Since the sizes differ by the scaling ratio R, the input and output impedances of the two transistors differ by the scaling ratio R. This in turn will mean that the RF drive will be proportionally divided between the two transistors of the detector and of the amplifier.
  • the RF drive delivered to the transistor B will be 1/ (R + 1) times the total RF drive.
  • the bias provided to the amplifier transistor network and the transistor B of the detector circuitry is set such that the scaled output signal of the detector circuitry relates to the output signal of the amplifier by a factor of R.
  • the total emitter area, or device size, for transistor network equals R times the emitter area for transistor B.
  • the scaling ratio chosen is not critical, as long as the above equations are met.
  • the detector circuitry 66 has been fabricated for applications at 900 MHz and 1800 MHz, and scaling ratios of 144, 72 and 48 have been used.
  • Detection, Decoupling, and Loading is the PS Output signal after filtering. Having different waveforms (varying in different ways over changes in supply voltage, temperature, and frequency) results in PS Output voltage being an inconsistent representation of the output power.
  • FIG. 3 An embodiment of the present invention with a different topology is shown in Fig. 3.
  • the PS structure is now composed of two transistors, "A”, which is one of the transistors of the amplifier, having its collector connected to the RF output (and connected to the collectors of the other transistors of the PA), and transistor "B", having its collector connected to the PS Output.
  • the two PS transistors are directly connected at their bases.
  • Transistor B can be a scaled version of the transistors of a transistor network forming the output stage of the amplifier.
  • the detector circuitry includes a scaled version of the amplifier and is configured to include a transistor B receiving bias at its base from the bias network 100 through resistor Rb/2 and RF drive through capacitor 2*Cb.
  • An advantage of this circuit is that it makes use of the PA collector waveforms as seen by transistor "A".
  • the load presented to the PA determines the voltage and current waveforms at the collector of the PA and that of transistor "A” in the PS.
  • the collector currents of these two devices are forced to be very close to one another in value.
  • the load presented to the PA influences the current waveform at the collector of transistor "B”.
  • Increasing the emitter area ratio of transistor "A” to transistor “B” increases the influence of the PA load impedance on the PS Output current while decreasing the influence of the PS load impedance. The tradeoff ultimately comes down to PS susceptibility to variations in PS load vs.
  • PS sensitivity (if transistor "B" is too small, then the PS Output is too low: i.e. low sensitivity as measured in ⁇ A/dB).
  • the coupling capacitor should have a larger value, 2*Cb, and the resister to the bias network should have a smaller value, such as Rb/2, as shown in the Figure. Otherwise, much of the circuitry can be similar to that shown in Fig. 2, and corresponding reference signs have been used as appropriate.
  • Figs. 4 and 5 PS detection circuitry 120.
  • Fig. 4 shows an example of how to implement the PS detection, decoupling and loading block 120 in accordance with further embodiments.
  • Resistor 200 is a bias resistor coupled to a bias voltage, for reducing the voltage across capacitor 210.
  • the other end of the resistor is coupled to the collector of the PS transistor, transistor B in Fig. 3, and to the PS output.
  • Capacitor 210 is also coupled to ground.
  • the voltage across the capacitor or across the resistor represents the sensed output.
  • Fig. 5 shows another example of detector circuitry which can be used to implement the "PS Detection, Decoupling, and Loading" block 120. This is coupled to transistor B in Fig. 3.
  • the collector of power sense (PS) transistor B is coupled to voltage source VCC through inductor 220.
  • the detector circuitry receives the RF drive and bias from the bias network 100 and creates a scaled output signal, which is a scaled version of the output signal generated by the amplifier, at the collector of transistor B.
  • Diode 250 rectifies the scaled output signal, and capacitor 260 and resistor 270 filter the rectified signal to create a power sense signal PS output proportional to the transmit power associated with the output signal of the amplifier.
  • capacitor 230 and resistor 240 represent the RF load impedance for the transistor B, and this impedance is a scaled replica of the RF load impedance presented to the transistor network A (of the amplifier) by output matching network 110.
  • Capacitor 260 filters RF from the power sense signal 60, and resistor 270, the load resistance of the detector, is selected to set the level of the power sense PS output signal.
  • the environment surrounding the power sense can be kept identical with regards to the load presented to the RF stage.
  • the load presented to the PS (similar in topology to that shown in Fig. 4) needed to be optimized if used in the arrangement of Fig. 2. With the new topology no load optimization is necessary. This can make design easier, or remove a set up step during manufacture.
  • Detector current measured as a function of output power in Watts, can be shown to be accurate for variations in supply voltage between 3 V, 3.5V, and 4.8V for example. (Detector accuracy is dominated by variations with supply voltage). The accuracy of the conventional PS deteriorates significantly at power outputs above 1.5 Watts, while that of the new PS remains good. This is especially notable when considering that no PS load tuning is necessary for the new PS.
  • Figs. 6-8 PS and PA layout A layout of these cells on a substrate of an integrated circuit can affect the performance.
  • Fig. 6 shows a layout for a power amplifier for handset application as discussed above having a built in power control loop to constantly monitor output power and feed this information back through an input signal controlling the PA.
  • Fig. 6 shows a conventional layout. Power amplifier modules having built-in power detection schemes often give little thought to the placement and layout of the PS cell (see for example US6307364B1 and WO03/026333A1). The PS cell is often placed outside the row of PA cells entirely (as in Fig. 6), adding additional parasitics and creating unwanted differences in the PS cell's behavior.
  • the layout of the PS device with respect to the layout of the PA can be a critical element of the PS design, particularly for RF devices. Small differences in parasitic elements between the "PS cell” and a "PA cell” can have significant impact on PS accuracy over variations in supply voltage, temperature, and frequency. In addition, the location of the PS cell (whether it is at the base-side, midpoint, or collector-side of a row or column of PA cells) can be important as well.
  • Figs. 7 and 8 show improved layouts according to embodiments of the invention.
  • Fig. 7 shows an improved layout, in which the detector is centrally located within a PA cell. This can offer improvements in accuracy of detection in particular to overcome mismatch of temperature and parastics between the Power amplifier and power detector.
  • Fig. 7 depicts how such a PS cell can be centrally located among the neighboring PA cells in a row.
  • detector current variations resulting from changes in supply voltage, or temperature changes, can be reduced.
  • detector current can be measured as a function of output power in Watts, at supply voltages such as 3V, 3.5V, and 4.8V for example.
  • the power output is approximately 2W.
  • Fig. 8 shows a layout in which an output power of an RF power amplifier PA
  • a power detection circuit in a PS cell
  • a sensing transistor B having a common input circuit with one or more of the amplifier transistors A.
  • the circuit has an RF feed capacitor 70 (to the PS cell) and a bias feed resistor 72 (to the PS cell) that is identical in shape and form to those in the PA cells (capacitor 75, resistor 74), to reduce unwanted parasitic differences.
  • Embodiments of the invention are useful for power amplifier modules for handset applications where power detection is necessary. It is particularly attractive for PAs having built in power control. It can be embodied in integrated circuit form using GaAs, or Si (or any other BiPolar or HBT technology). Many applications using a power amplifier module with built in power detection can be conceived. Embodiments of the invention can be applied to RF Power amplifiers with control loops in the last stage of the amplifier for example. A preferred implementation is in an integrated circuit such as a bipolar device made in a substrate of a III-V material, i.e. a "HBT"-transistor in a GaAs substrate. Applications include RF Modules, Power Amplifiers for mobile phones or other mobile battery powered devices with wireless transmitters.
  • an output power of an RF power amplifier PA having amplifier transistors having coupled outputs is sensed by a power detection circuit having a sensing transistor B having a common input circuit with one or more of the amplifier transistors A.
  • a common input circuit By sharing a common input circuit, any changes in the output load on the PA influences the output of not only the PA transistors, but also the output of the sensing transistor. This can help overcome electrical mismatch and keep the sensing transistor is in saturation when the amplifier transistors are in saturation.
  • a common base connection can mean collector currents of the sensing and amplifier transistors are forced to be close. Accuracy can be further increased by locating the detection circuit centrally in a row of amplifier transistors and having feed resistor and feed capacitor matched in shape to corresponding components of the amplifier.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)

Abstract

La puissance de sortie d'un amplificateur de puissance RF PA possédant des transistors à sorties couplées, est détectée par un circuit de détection de puissance possédant un transistor de détection B doté d'un circuit d'entrée commun à au moins un des transistors de l'amplificateur A. Avec le partage d'un circuit d'entrée commun, tout changement de la charge de sortie sur le PA influence la sortie non seulement des transistors PA, mais également la sortie du transistor de détection. Ainsi, le défaut d'adaptation est supprimé et le transistor de détection peut être maintenu à saturation lorsque les transistors d'amplificateur sont à saturation. Une connexion de base commune peut moyenner les courants collecteurs des transistors d'amplification et de détection sont forcer à se fermer. La précision peut être encore augmentée par l'installation du circuit de détection au centre d'une rangée de transistors d'amplification et de faire correspondre la forme de la résistance d'alimentation et le condensateur d'alimentation à celle des composants correspondants de l'amplificateur.
PCT/IB2005/052631 2004-08-16 2005-08-08 Detecteur de puissance haute precision pour applications a des combines WO2006018784A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04103921 2004-08-16
EP04103921.5 2004-08-16

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WO2006018784A2 true WO2006018784A2 (fr) 2006-02-23
WO2006018784A3 WO2006018784A3 (fr) 2006-04-27

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7190935B2 (en) * 2001-09-14 2007-03-13 Rf Micro Devices, Inc. Amplifier power detection circuitry
US6653902B1 (en) * 2002-09-03 2003-11-25 Triquint Semiconductor, Inc. Amplifier power control circuit
JP2004194063A (ja) * 2002-12-12 2004-07-08 Renesas Technology Corp 高周波電力増幅器およびそれを用いた通信装置

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