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WO2006065160A1 - Procede de fabrication de couches epitaxiales inx alyga1-x-yn dopees, couche epitaxiale inxalyga1-x-yn dopee et structure multicouche a semi-conducteurs comprenant au moins une couche epitaxiale inxalyga1-x-y - Google Patents

Procede de fabrication de couches epitaxiales inx alyga1-x-yn dopees, couche epitaxiale inxalyga1-x-yn dopee et structure multicouche a semi-conducteurs comprenant au moins une couche epitaxiale inxalyga1-x-y Download PDF

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WO2006065160A1
WO2006065160A1 PCT/PL2005/000081 PL2005000081W WO2006065160A1 WO 2006065160 A1 WO2006065160 A1 WO 2006065160A1 PL 2005000081 W PL2005000081 W PL 2005000081W WO 2006065160 A1 WO2006065160 A1 WO 2006065160A1
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growth
doped
epitaxial
layer
substrate
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WO2006065160A8 (fr
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Czeslaw Skierbiszewski
Sylwester Porowski
Izabella Grzegory
Piotr Perlin
Michal Leszczynski
Marcin Siekacz
Anna Feduniewicz
Tadeusz Suski
Przemyslaw Wisniewski
Michal Bockowski
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Instytut Wysokich Cisnien Polskiej Akademii Nauk
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Priority to EP05817699A priority Critical patent/EP1829090A1/fr
Publication of WO2006065160A1 publication Critical patent/WO2006065160A1/fr
Publication of WO2006065160A8 publication Critical patent/WO2006065160A8/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments

Definitions

  • Subject of this invention is a method of manufacturing doped In x Al y Gai -x- yN epitaxial layers, doped LixAlyGai-x-yN epitaxial layer and semiconductor multi-layer structure comprising at least one doped In x Al y Gai -x-y N epitaxial layer, where l>x>0.001 and 0.999>y>0.
  • LPE liquid phase epitaxy
  • ClVPE chloride vapor epitaxy
  • HVPE hydride vapor epitaxy
  • MBE molecular beam epitaxy
  • CBE chemical beam epitaxy
  • MOVPE metal organic vapour-phase epitaxy
  • NH3 ammonia
  • the MOVPE method relies on using of MOVPE epitaxy with ammonia (NH 3 ), described for instance in work of S. Nakamura [Shuji Nakamura, Gerhard Fasolfind Tlxe Blue Laser Diode, GaN Based Emitters and Lasers" Springer-Verlag 1997 (ISBN 3-540-61590-3)].
  • the GSMBE method relies on epitaxial process where group V elements are supplied by gas sources.
  • GSMBE of nitrides similarly to MOVPE method, uses NH3 as a gas which delivers nitrogen to the layer and Cp2Mg as a source of p-type doping. Details of this method has been shown e.g. in work by S.E. Hooper at al, (S.E.
  • RN-MBE Reactive Nitrogen MBE
  • PAMBE Plasma Assisted MBE
  • constituent layer atoms such as Ga, In, Al, Si, Mg are supplied by evaporation of these species from effusion cells (where flux of given components is a function of temperature of effusion cell).
  • the active nitrogen in the PAMBE is supplied by the plasma unit in a form of a beam of excited molecules and atoms.
  • the plasma unit is a device which excites (or dissociates) nitrogen molecules (in order to create nitrides of gallium, indium, aluminum and their alloys).
  • it may be a device where radio-frequency radiation (RF plasma source) or cyclotron resonance effect (ECR plasma source) excites nitrogen molecules.
  • RF plasma source radio-frequency radiation
  • ECR plasma source cyclotron resonance effect
  • MOVPE gallium nitride with record parameters
  • crystallographic defects are the source of the dopant segregation during growth, e.g. inverse domain are created during growth for high Mg doping of GaN. It leads to the decrease of number of dopants by two order of magnitude and leads to the deterioration of crystal quality.
  • the effective means to decrease defect density in GaIvT InGaN, AlGaN
  • the number of dislocations after growth of GaN layer was comparable with the dislocations number in the substrate, the important for the growth was to use for the epitaxy low dislocations density substrates and to use such a way of epitaxy not to increase the dislocation number.
  • the epitaxial growth is made on crystalline substrates with the threading dislocation (TD) density less than 10 5 cm "2 and with disorientation angle of atomic steps with respect to the crystallographic planes from 0.3 seconds (0.3 ' ) to 30 degree (30°).
  • the growth is made by molecular beam epitaxy with chemically active beam of nitrogen atoms and molecules (Reactive Nitrogen Molecular Beam Epitaxy RN-MBE) with donor and/or acceptor and/or izoelectronic and/or magnetic dopants, in conditions where growth temperature is lower than InN metastability temperature.
  • the growth temperature can be lower than 65O 0 C, 600 0 C,
  • the HVPE grown substrates, ELOG substrates or GaN substrates with dislocation density less than 10 3 cm "2 made by high pressure synthesis are used as a crystalline substrates.
  • the disorientation angle is measured relatively to the plane perpendicular to c axis of crystal.
  • the disorientation angle is measured relatively to the plane (11-20) perpendicular to a axis of crystal.
  • number of threading dislocations is less than 10 5 cm “2 and concentrations of substitutional dopants (like Si, Ge, O, Te, Mn, Mg, Be, Fe,
  • Er, Ca, C, Cr, Zn is higher than 10 18 cm "3 .
  • Semiconductor multi-layer structure comprises at least one In x AlyGai -x , y N epitaxial layer where l ⁇ x>0.001 and 0.999>y>0, threading dislocation (TD) density is lower than
  • substitutional impurity like Si, Ge, O, Te, Mn, Mg, Be, Fe, Er, Ca, C, Cr, Zn concentration is higher than 10 18 cm “3 .
  • the threading dislocation density is lower than 10 5 cm “2 and substitutional impurity (like Si, Ge, O, Te, Mn, Mg, Be, Fe, Er, Ca, C, Cr, Zn) concentration is higher than 10 18 cm '3 .
  • Fig. 1 shows scheme of determination of the disorientation angle of the semiconductor surface from the atomic steps.
  • Fig. 2 shows step-flow growth mechanism
  • Fig. 3 presents mechanism of doping of In x Al y Ga 1-x-y N with substitutional dopants below metastability temperature of InN.
  • Fig. 4 shows mechanism of escape In and substitutional dopant atoms at temperatures above metastable temperatures of InN.
  • Fig. 5 presents In ⁇ AlyGai -x- yN p-type conductivity doped with Mg as a function of growth temperature.
  • Fig. 6 indicates way of mounting substrate for growth with use of molybdenum springs.
  • Fig. 7 indicates way of mounting substrate for growth with templates glued by indium to sapphire.
  • Fig. 8 shows the Ga flux (determined by the Monitor Ion Gauge) as a function of the gallium effusion cell temperature.
  • Fig. 9. shows the In flux (determined by the Monitor Ion Gauge) as a function of the indium effusion cell temperature
  • Fig. 10 shows the Al flux (determined by the Monitor Ion Gauge) as a function of the aluminum effusion cell temperature
  • Fig. 11 presents schematically multilayer semiconductor structure according to this invention to be used for obtaining a light emitting diode.
  • the Plasma Assisted Molecular Beam Epitaxy - PAMBE is used (which is a version of Reactive Nitrogen Molecular Beam Epitaxy - RN MBE).
  • atoms which comprise the layer like Ga, In, Al 5 Si, Mg are taken from evaporation of these elements in effusion cells (flux of impinging atoms - e.g. Ga - is function of the temperature of the effusion cell for given element - here Ga effusion cell ) and nitrogen is supplied as an excited nitrogen plasma after passing through plasma source.
  • Plasma source is called an device where nitrogen molecules are excited (or dissolved) in order to obtain gallium nitride, indium nitride, aluminum nitride and their alloys.
  • it can be Radio Frequency Plasma Source or ECR Plasma Source.
  • Preparation of the crystalline substrates for epitaxial growth relies on making atomic steps on the crystal surface, made for instance according to method disclosed in the Polish patent No 180448.
  • the atomic steps 1 have width which is a function of the disorientation angle ⁇ of the substrate.
  • the disorientation angle ⁇ of the substrate is defined between the surface of the atomic step 1 and the surface of the crystal 2 .
  • the disorientation angle ⁇ can be defined relatively to planes a and c of GaN crystal. Planes a and c are perpendicular to the a and c axis, respectively.
  • the width of the atomic steps was equal to 14.3 nm.
  • the back side of the crystal 1 was covered by 1 ⁇ m of molybdenum. Molybdenum layer allows uniform heating of the substrate during the MBE growth.
  • Step flow growth mechanism (for creation of the layer) is shown on Fig. 2.
  • the height 3 of the atomic step 1 is a function of the lattice constant of the substrate.
  • Fig. 5 the influence of the temperature and number of the defects on the p type conductivity of Mg doped In x AlyGai -x-y N epitaxial layers (where l ⁇ x>0.001 a 0.999>y>0) is shown (for constant Mg flux).
  • Curve (a) in Fig. 5 describes behavior of the p-type conductivity of In x AlyGai -x-y N epitaxial layers grown on the substrate with defect density 10 9 cm "2 . It is known in the literature p-type conductivity behavior vs. temperature [V. Ramachandran, R. M. Feenstra, W. L. Sarney, L.Salamanca-Riba, J. E. Northrup, L. T.
  • the InN metastability temperature at vacuum conditions is temperature where decomposition speed of InN layer is one order of magnitude slower than growth of InN layer.
  • the substrates used for InAlGaN growth can be made from crystalline GaN 3 crystalline AlN, from
  • GaN obtained by HVPE on sapphire from GaN obtained by HVPE on crystalline GaN, and also it can be GaN substrates grown on sapphire by ELOG process, where part of the grown surface has decreased dislocation density [Shuji Nakamura, Gerhard Fasollinger The Blue Laser Diode, GaN
  • Second way of mounting the substrates relies on the gluing substrate 6' by indium 7' to sapphire plate 9' (which front side was covered by 2 ⁇ m of GaN layer 12 while its back side was covered by 1 ⁇ m molybdenum 10' - see Fig. 7). Molybdenum retaining ring 11' allows mechanical stability of this mounting. Sapphire plate 9' can be replaced by molybdenum plate.
  • the attachments of the substrate by indium is taken at 18O 0 C at high air purity conditions (less than 1000 dust particles with the size 0.3 ⁇ m per feet 3 )
  • Substrate prepared in such way was loaded to VG-90 Oxford Instruments MBE system. Then it was heated for 24 hours at 45O 0 C and then for 30 minutes at 600 0 C. After reaching the vacuum level below 1 x 10 "10 torr, the substrate was transferred to the growth chamber.
  • the substrate was heated in the growth chamber below InN metastability temperature, e.g. to 68O 0 C.
  • the Ga effusion cell was heated to 97O 0 C (effusion cell made by Veeco, VG-300- SUMO-L), indium effusion cell to 95O 0 C (effusion cell made by Oxford VG-40cc/KM-28) and Si effusion cell - to 1200 0 C (effusion cell made by Oxford Instruments, VG-40cc / KM- 28).
  • Al effusion cells temperatures (measured by Monitor Ion Gauge made by Varian using ion current of 1 mA) have been shown.
  • the substrate was heated in the growth chamber below InN metastability temperature, e.g. to 65O 0 C.
  • the Ga effusion cell was heated to 97O 0 C, indium effusion cell to 95O 0 C and Bie effusion cell to 93O 0 C (effusion cell made by Oxford Instruments, VG-40cc / KM-28 standard).
  • the flow of high purity nitrogen was established at the level of 1 seem.
  • the nitrogen flow was controlled by mass flow controller.
  • the RF plasma source was switched on (Unibulb EPI-RFS-450-G-N made by Veeco) at power of 240W.
  • the pressure in the growth chamber during operation of RF Plasma Source was 1.5 x IO 5 torr. After opening the Ga, In, Be cells' and N plasma source's shutters for 60 minutes, the 0.3 ⁇ m of Ino.02Gao.9sN doped with Be was grown.
  • the Be doping level was 3 x 10 20 cm “3 (measured by SIMS after growth) and dislocation density less than 10 5 cm" 2 .
  • the substrate was heated in the growth chamber to 61O 0 C.
  • the Ga effusion cell was heated to 97O 0 C, indium effusion cell to 91O 0 C and Mg effusion cell to 410 0 C (effusion cell made by Oxford Instruments, VG-40cc / KM-28 standard).
  • the flow of high purity nitrogen (at the level better than 1 ppb) was established at the level of 1 seem.
  • the nitrogen flow was controlled by mass flow controller.
  • the RF plasma source was switched on (Unibulb EPI-RFS-450-G-N made by Veeco) at power of 240W.
  • the pressure in the growth chamber during operation of the RF Plasma Source was 1.5 x 10" 5 torr.
  • the substrate was heated in the growth chamber to 58O 0 C and parameters for plasma source was the same as in Example I.
  • the Ga effusion cell was heated to 958 0 C, aluminum effusion cell - to 1045 0 C (effusion cell made by Veeco, VG-300-SUMO-AL-L), indium effusion cell to 91O 0 C and Mg effusion cell to 400 0 C.
  • the flow of high purity nitrogen was established at the level of 1 seem.
  • the nitrogen flow was controlled by mass flow controller.
  • the RF plasma source was switched on (Unibulb made by Veeco) at power of 240W.
  • the pressure in the growth chamber during operation of the RF Plasma Source was 1.5 x 10 "5 torr.
  • the 0.1 ⁇ m of hio.o2Ali6Gao.82N doped with Mg was grown. Then the Al, Ga, hi, Mg cells' and N plasma source's shutters were closed.
  • the Mg doping level was 2 x 10 20 cm '3 and dislocation density - less than 10 5 cm- 2 .
  • the substrate was heated in the growth chamber to 53O 0 C.
  • the Ga effusion cell was heated to 97O 0 C (effusion cell made by Veeco, VG-300-SUMO-L), indium effusion cell to 85O 0 C and Mg effusion cell to 400 0 C.
  • the flow of high purity nitrogen was established at the level of 1 seem.
  • the nitrogen flow was controlled by mass flow controller.
  • the RF plasma source was switched on (Unibulb made by Veeco) at power of 240W.
  • the pressure in the growth chamber during operation of RF Plasma Source was 1.5 x 10 '5 torr.
  • the Ga, hi, Mg cells' and N plasma source's shutters After opening the Ga, hi, Mg cells' and N plasma source's shutters for 60 minutes, the 0.3 ⁇ m of rno.02Gao.9sN doped with Mg was grown. Then the Ga, In, Mg cells' and N plasma source's shutters were closed.
  • the Mg doping level was 1 x 10 21 Cm "3 (measured by SIMS after growth) and dislocation density less than 10 5 cm '2 .
  • the substrate in vacuum conditions better than 5 x 10" 10 torr was heated in the growth chamber to 48O 0 C.
  • the Ga effusion cell was heated to 97O 0 C, indium effusion cell to 84O 0 C and Mn effusion cell to 83O 0 C.
  • the flow of high purity nitrogen at the level better than 1 ppb was established at the level of 1 seem.
  • the nitrogen flow was controlled by mass flow controller.
  • the RF plasma source was switched on (Unibulb made by Veeco) at power of 240W.
  • the pressure in the growth chamber during operation of the RF Plasma Source was 1.5 x 10' 5 torr. After opening the Ga, hi, Mn cells' and N plasma source's shutters for 60 minutes, the 0.3 ⁇ m of hio.o2Gao.98N doped with Mn was grown. Then the Ga, In, Mn cells' and N plasma source's shutters were closed. The Mn doping level was 1 x 10 21 cm “3 and dislocation density less than 10 5 cm "2 .
  • the substrate was heated in the growth chamber to 43O 0 C.
  • the Ga effusion cell was heated to 97O 0 C 5 indium effusion cell to 83O 0 C, Mg effusion cell to 41O 0 C and Mn effusion cell to 83O 0 C.
  • the flow of high purity nitrogen was established at the level of 1 seem.
  • the nitrogen flow was controlled by mass flow controller.
  • the RF plasma source was switched on (Unibulb made by Veeco) at power of 240W.
  • the pressure in the growth chamber during operation of RF plasma source was 1.5 x 10 "5 torr.
  • the Ga, In, Mn cells; and N plasma source's shutters for 60 minutes the 0.3 ⁇ m of Ino.o 2 Gao . 9sN doped with Mn and Mg was grown. Then the Ga, In, Mn, Mg cells' and N plasma source's shutters were closed.
  • the Mn doping level was 4 x 10 21 cm “3
  • Mg doping level was 4 x 10 20 cm "3 and dislocation density less than 10 5 cm' 2 .
  • Example 7 Obtained layer had dislocation density less than 10 6 cm '2 and the Mn doping level was 4 x 10 21 cm" 3 , Mg doping level was 4 x 10 20 cm "3 Example IX.
  • Example V Obtained layer had dislocation density less than 10 4 cm “2 , Mg doping level was 1 x 10 21 cm “3 .
  • Example VII Obtained layer had dislocation density less than 10 5 cm '2 , and the Mn doping level was 4 x 10 21 cm '3 while the Mg doping level was
  • the substrate was heated in the growth chamber to 58O 0 C and parameters for plasma source was the same as in Example I.
  • the Ga effusion cell was heated to 958 0 C 5 indium effusion cell - to 89O 0 C 5 aluminum effusion cell - to 1045 0 C (effusion cell made by Veeco, VG-300- SUMO-AL-L) 3 and Mg effusion cell to 400 0 C.
  • the flow of high purity nitrogen (at the level better than 1 ppb) was established at the level of 1 seem.
  • the nitrogen flow was controlled by mass flow controller.
  • the RF plasma source was switched on (Unibulb made by Veeco) at power of 240W.
  • the pressure in the growth chamber during operation of the RF Plasma Source was 1.5 x 10 "5 torr. After opening the Al, Ga 5 In 5 Mg cells' and N plasma source's shutters for 20 minutes, the 0.1 ⁇ m of Ino.o2Ali6Gao.g2N doped with Mg was grown. Then the Al, Ga 5 In, Mg cells' and N plasma source's shutters were closed.
  • the Mg doping level was 2 x 10 20 cm '3 and dislocation density was less than 10 5 cm "2 .
  • the hio.o2Ali6Gao.82N layer have dislocation density less than 10 5 cm '2 and Mg concentration 2 x 10 20 cm "3 .
  • the substrate in vacuum conditions better than 5xlO "10 torr) was heated to 71O 0 C.
  • the Ga effusion cell was heated to 1010 0 C (effusion cell made by Veeco, VG-300-SUMO-L) and Si effusion cell - to 118O 0 C (effusion cell made by Oxford VG-40cc / KM-28 standard).
  • Monitor Ion Gauge which is a standard equipment of VG 90 MBE
  • Varian using ion current of 1 niA have been shown.
  • From one to twenty quantum InGaN wells is used as an optically active set of layers in the light emitting diodes.
  • substrate 6 with buffer layer 13 was heated to 62O 0 C.
  • Parameters of the plasma source was the same as in point b) of Example XHL
  • the Ga effusion cell was heated to 963 0 C, indium effusion cell - to 89O 0 C.
  • the Ga, hi cells' and N plasma source's shutters were opened and for 36 seconds 2 nm of Ino.12Gao.8sN was grown. Then the Ga, In cells' and N plasma source's shutters were closed.
  • Example IV Growth of the contact layer 15 was done accordingly to the Example IV .
  • the layer was characterized by dislocation density less than 10 5 cm "2 and Mg concentration of 2 x 10 20 cm '3 .
  • Ga, In, Mg cells' and N source's shutters were closed and substrate 6 with the set of layer 13, 14, 15 was cooled down to 3O 0 C and removed from MBE machine.
  • Light emitting diode obtained according to such procedure emitted light at the wavelength of 405 nm.
  • the InAlGaN and multilayer structures containing the substitutional dopant like Cr, Ge, O, Te, Fe 5 Er, Ca, C 5 Cr 5 Zn concentrations higher than 10 18 cm “3 and dislocation less than 10 5 cm ⁇ 2 can be obtained.

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Abstract

Le procédé de l'invention est basé sur le dépôt épitaxial de couches avec donneur ou/et accepteur ou/et dopants izoélectroniques ou/et magnétiques sur des substrats cristallins avec une densité de dislocations traversantes inférieure à 105cm-2 et un angle de désorientation (α) de phases atomiques (1) par rapport aux plans cristallins compris entre 0,3' et 30°, la température de croissance épitaxiale étant inférieure à la température de métastabilité InN, par épitaxie en faisceau moléculaire avec des atomes et des molécules d'azote chimiquement actifs (épitaxie en faisceau moléculaire avec azote réactif - RN MBE). Selon cette invention, la concentration des dislocations traversantes dans la couche formée est inférieure à 105cm-2 et la concentrations des dopants substitutionnels (Si, Ge, Te, Mn, Mg, Be, Fe, Er, Ca, C, Cr, Zn) est supérieure à 1018cm-3.
PCT/PL2005/000081 2004-12-15 2005-12-14 Procede de fabrication de couches epitaxiales inx alyga1-x-yn dopees, couche epitaxiale inxalyga1-x-yn dopee et structure multicouche a semi-conducteurs comprenant au moins une couche epitaxiale inxalyga1-x-y WO2006065160A1 (fr)

Priority Applications (1)

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EP05817699A EP1829090A1 (fr) 2004-12-15 2005-12-14 Procede de fabrication de couches epitaxiales inx alyga1-x-yn dopees, couche epitaxiale inxalyga1-x-yn dopee et structure multicouche a semi-conducteurs comprenant au moins une couche epitaxiale inxalyga1-x-y

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PL371753A PL371753A1 (pl) 2004-12-15 2004-12-15 Sposób wytwarzania domieszkowanych warstw epitaksjalnych InxAlyGa1-x-yN, domieszkowana warstwa epitaksjalna InxAlyGa1-x-yN i półprzewodnikowa struktura wielowarstwowa zawierająca warstwę epitaksjalną InxAlyGa1-x-yN, dla której 1 ˛ x > 0.001 a 0.999 ˛ y > 0
PLP371753 2004-12-15

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WO2006065160A1 true WO2006065160A1 (fr) 2006-06-22
WO2006065160A8 WO2006065160A8 (fr) 2006-11-02

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Publication number Priority date Publication date Assignee Title
WO2009139654A1 (fr) * 2008-04-28 2009-11-19 Instytut Wysokich Cisnien Polskiej Akademii Nauk PROCÉDÉ DE FABRICATION DE COUCHE ÉPITAXIALE D'InxAlyGa1-x-yN DOPÉE AU MAGNÉSIUM À CONDUCTIVITÉ DE TYPE p, ET FABRICATION DE STRUCTURES DE SEMI-CONDUCTEURS COMPRENANT UNE TELLE COUCHE

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