WO2006065160A8 - Procede de fabrication de couches epitaxiales inx alyga1-x-yn dopees, couche epitaxiale inxalyga1-x-yn dopee et structure multicouche a semi-conducteurs comprenant au moins une couche epitaxiale inxalyga1-x-y - Google Patents
Procede de fabrication de couches epitaxiales inx alyga1-x-yn dopees, couche epitaxiale inxalyga1-x-yn dopee et structure multicouche a semi-conducteurs comprenant au moins une couche epitaxiale inxalyga1-x-yInfo
- Publication number
- WO2006065160A8 WO2006065160A8 PCT/PL2005/000081 PL2005000081W WO2006065160A8 WO 2006065160 A8 WO2006065160 A8 WO 2006065160A8 PL 2005000081 W PL2005000081 W PL 2005000081W WO 2006065160 A8 WO2006065160 A8 WO 2006065160A8
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- doped
- inxalyga1
- epitaxial
- layer
- epitaxial layer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000001451 molecular beam epitaxy Methods 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 239000002019 doping agent Substances 0.000 abstract 2
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 125000004433 nitrogen atom Chemical group N* 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02581—Transition metal or rare earth elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05817699A EP1829090A1 (fr) | 2004-12-15 | 2005-12-14 | Procede de fabrication de couches epitaxiales inx alyga1-x-yn dopees, couche epitaxiale inxalyga1-x-yn dopee et structure multicouche a semi-conducteurs comprenant au moins une couche epitaxiale inxalyga1-x-y |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PL371753A PL371753A1 (pl) | 2004-12-15 | 2004-12-15 | Sposób wytwarzania domieszkowanych warstw epitaksjalnych InxAlyGa1-x-yN, domieszkowana warstwa epitaksjalna InxAlyGa1-x-yN i półprzewodnikowa struktura wielowarstwowa zawierająca warstwę epitaksjalną InxAlyGa1-x-yN, dla której 1 ˛ x > 0.001 a 0.999 ˛ y > 0 |
PLP371753 | 2004-12-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006065160A1 WO2006065160A1 (fr) | 2006-06-22 |
WO2006065160A8 true WO2006065160A8 (fr) | 2006-11-02 |
Family
ID=36051512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/PL2005/000081 WO2006065160A1 (fr) | 2004-12-15 | 2005-12-14 | Procede de fabrication de couches epitaxiales inx alyga1-x-yn dopees, couche epitaxiale inxalyga1-x-yn dopee et structure multicouche a semi-conducteurs comprenant au moins une couche epitaxiale inxalyga1-x-y |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP1829090A1 (fr) |
PL (1) | PL371753A1 (fr) |
WO (1) | WO2006065160A1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
PL385048A1 (pl) * | 2008-04-28 | 2009-11-09 | Topgan Spółka Z Ograniczoną Odpowiedzialnością | Sposób wytwarzania domieszkowanej magnezem warstwy epitaksjalnej InxAlyGa1-x-yN o przewodnictwie typu p, dla której )0 x 0,2 a 0 y 0,3 oraz półprzewodnikowych struktur wielowarstwowych zawierających taką warstwę epitaksjalną |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU7346396A (en) * | 1995-10-13 | 1997-04-30 | Centrum Badan Wysokocisnieniowych | Method of manufacturing epitaxial layers of gan or ga(a1,in)n on single crystal gan and mixed ga(a1,in)n substrates |
JP4432180B2 (ja) * | 1999-12-24 | 2010-03-17 | 豊田合成株式会社 | Iii族窒化物系化合物半導体の製造方法、iii族窒化物系化合物半導体素子及びiii族窒化物系化合物半導体 |
US6447604B1 (en) * | 2000-03-13 | 2002-09-10 | Advanced Technology Materials, Inc. | Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices |
SG157960A1 (en) * | 2001-10-22 | 2010-01-29 | Univ Yale | Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices |
KR101017657B1 (ko) * | 2002-04-30 | 2011-02-25 | 크리 인코포레이티드 | 고 전압 스위칭 디바이스 및 이의 제조 방법 |
-
2004
- 2004-12-15 PL PL371753A patent/PL371753A1/pl not_active Application Discontinuation
-
2005
- 2005-12-14 EP EP05817699A patent/EP1829090A1/fr not_active Withdrawn
- 2005-12-14 WO PCT/PL2005/000081 patent/WO2006065160A1/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
PL371753A1 (pl) | 2006-06-26 |
EP1829090A1 (fr) | 2007-09-05 |
WO2006065160A1 (fr) | 2006-06-22 |
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