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WO2006056730A3 - Protection de surfaces exposees a des particules chargees - Google Patents

Protection de surfaces exposees a des particules chargees Download PDF

Info

Publication number
WO2006056730A3
WO2006056730A3 PCT/GB2005/003918 GB2005003918W WO2006056730A3 WO 2006056730 A3 WO2006056730 A3 WO 2006056730A3 GB 2005003918 W GB2005003918 W GB 2005003918W WO 2006056730 A3 WO2006056730 A3 WO 2006056730A3
Authority
WO
WIPO (PCT)
Prior art keywords
mirror surface
deposits
charged particles
euv radiation
coating
Prior art date
Application number
PCT/GB2005/003918
Other languages
English (en)
Other versions
WO2006056730A2 (fr
Inventor
Robert Bruce Grant
Original Assignee
Boc Group Plc
Robert Bruce Grant
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boc Group Plc, Robert Bruce Grant filed Critical Boc Group Plc
Priority to JP2007542076A priority Critical patent/JP2008522399A/ja
Priority to EP05791381A priority patent/EP1815294A2/fr
Publication of WO2006056730A2 publication Critical patent/WO2006056730A2/fr
Publication of WO2006056730A3 publication Critical patent/WO2006056730A3/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants

Landscapes

  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Optical Elements Other Than Lenses (AREA)

Abstract

L'invention concerne une méthode pour protéger la surface d'un miroir situé dans un compartiment exposé à un rayonnement UV extrême (EUV). Ce rayonnement EUV est généré à partir d'un plasma qui émet à la fois un rayonnement EUV et des particules électriquement chargées. Des molécules organiques sont envoyées dans ce compartiment. Ces molécules organiques interagissent avec le rayonnement EUV pour former un revêtement de dépôts carbonés sur la surface du miroir. Les particules chargées émises à partir du plasma provoquent un choc sur les dépôts, ce qui provoque une érosion superficielle des dépôts situés sur la surface du miroir. En contrôlant au moins la vitesse de dépôt des dépôts sur la surface du miroir, et la vitesse de suppression des dépôts de la surface du miroir, l'épaisseur du revêtement peut être activement contrôlée à la fois pour empêcher les chocs directs des particules chargées sur la surface du miroir et pour minimiser la perte de réflectivité de la surface du miroir, en raison de la formation du revêtement. Cette méthode est également appropriée pour protéger la surface d'une fenêtre utilisée pour transmettre un rayonnement EUV à partir du compartiment.
PCT/GB2005/003918 2004-11-26 2005-10-11 Protection de surfaces exposees a des particules chargees WO2006056730A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007542076A JP2008522399A (ja) 2004-11-26 2005-10-11 荷電粒子に露出される表面の保護
EP05791381A EP1815294A2 (fr) 2004-11-26 2005-10-11 Protection de surfaces exposees a des particules chargees

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0426036.0A GB0426036D0 (en) 2004-11-26 2004-11-26 Protection of surfaces exposed to charged particles
GB0426036.0 2004-11-26

Publications (2)

Publication Number Publication Date
WO2006056730A2 WO2006056730A2 (fr) 2006-06-01
WO2006056730A3 true WO2006056730A3 (fr) 2007-03-22

Family

ID=33561420

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2005/003918 WO2006056730A2 (fr) 2004-11-26 2005-10-11 Protection de surfaces exposees a des particules chargees

Country Status (7)

Country Link
EP (1) EP1815294A2 (fr)
JP (1) JP2008522399A (fr)
KR (1) KR20070084558A (fr)
CN (1) CN101061435A (fr)
GB (1) GB0426036D0 (fr)
TW (1) TW200632571A (fr)
WO (1) WO2006056730A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7279690B2 (en) * 2005-03-31 2007-10-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
GB0605725D0 (en) * 2006-03-23 2006-05-03 Boc Group Plc Spectral filter repair
GB0614028D0 (en) * 2006-07-14 2006-08-23 Boc Group Plc Method of controlling contamination of a surface
KR101333032B1 (ko) * 2007-06-12 2013-11-26 코닌클리케 필립스 엔.브이. 감소된 반사율을 향상시키기 위하여 ｅｕｖ 광 컴포넌트를 인시추 처리하는 광학 장치 및 방법
US7671348B2 (en) * 2007-06-26 2010-03-02 Advanced Micro Devices, Inc. Hydrocarbon getter for lithographic exposure tools
CN102138185B (zh) 2008-07-07 2015-09-09 皇家飞利浦电子股份有限公司 包含耐溅射材料的极端紫外线辐射反射元件
US20220066071A1 (en) * 2020-08-27 2022-03-03 Kla Corporation Protection of optical materials of optical components from radiation degradation
CN114280893B (zh) * 2021-11-25 2023-08-01 中国科学院微电子研究所 光刻机的污染控制系统、方法和光刻机

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010053414A1 (en) * 1999-06-08 2001-12-20 Leonard E. Klebanoff Mitigation of radiation induced surface contamination
EP1186957A2 (fr) * 2000-09-04 2002-03-13 Asm Lithography B.V. Appareil de projection lithographique

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010053414A1 (en) * 1999-06-08 2001-12-20 Leonard E. Klebanoff Mitigation of radiation induced surface contamination
EP1186957A2 (fr) * 2000-09-04 2002-03-13 Asm Lithography B.V. Appareil de projection lithographique

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KOSTER N ET AL: "Molecular contamination mitigation in EUVL by environmental control", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 61-62, July 2002 (2002-07-01), pages 65 - 76, XP004360517, ISSN: 0167-9317 *

Also Published As

Publication number Publication date
GB0426036D0 (en) 2004-12-29
EP1815294A2 (fr) 2007-08-08
CN101061435A (zh) 2007-10-24
WO2006056730A2 (fr) 2006-06-01
JP2008522399A (ja) 2008-06-26
KR20070084558A (ko) 2007-08-24
TW200632571A (en) 2006-09-16

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